InP crystal growth device and growth process based on VGF process

Abstract

The invention discloses an InP crystal growth device based on a VGF technology and a growth technology, and relates to the technical field of crystal manufacturing, the growth device comprises a growth frame, a growth cylinder is arranged on the growth frame, a plurality of growth chambers are arranged in the growth cylinder, a growth crucible is arranged in each growth chamber, each growth crucible is provided with a seed crystal carrying disc, and the seed crystal carrying discs are arranged on the growth cylinder. A plurality of composite rings are arranged in the growth chamber, each composite ring is rotationally connected with the growth chamber, the adjacent composite rings are rotationally connected in an embedded mode, a heat preservation cover is rotationally connected to the growth cylinder, a temperature measurement module is arranged at the bottom end of the growth crucible, and a pressure control module and a temperature control assembly are arranged in the growth cylinder; the temperature measuring module is electrically connected with the temperature control assembly through a wire, a vibration module is arranged in the growth chamber, a stripping hydraulic rod is arranged in the growth cylinder, and the output end of the stripping hydraulic rod is connected with the growth crucible.

Description

Technical Field

[0001] The present invention relates to the technical field of crystal manufacturing, and in particular to an InP crystal growth device and a growth process based on a VGF process. Background Art

[0002] Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. InP is used in high-power and high-frequency electronic devices because it has superior electron speed relative to the more common semiconductors silicon and gallium arsenide. It is used with indium gallium arsenide to make record-breaking pseudomorphic heterojunction bipolar transistors. It also has a direct band gap, making it useful in optoelectronic devices such as laser diodes. InP substrates are important materials that connect 5G communications, automotive electronics and optical communications. Electronic components made with this material have high speed, high frequency and high power characteristics.

[0003] The crystals grown by the existing VGF crystal growth method have high and uneven dislocation density and are prone to twinning, resulting in the processed products failing to meet the increasingly stringent quality requirements of customers. In the manufacturing process, it was also found that some crystals would have large cracks, which would directly affect the performance of the product. After some crystals were produced, large protrusions would appear on their surfaces, which would require subsequent corrections, seriously affecting the production quality. Summary of the invention

[0004] The object of the present invention is to provide an InP crystal growth device and a growth process based on a VGF process to solve the problems raised in the prior art.

[0005] To achieve the above object, the present invention provides the following technical solutions: The growth device comprises a growth frame, a growth tube is arranged on the growth frame, a plurality of growth chambers are arranged inside the growth tube, a growth crucible is arranged in each growth chamber, a seed crystal carrier is arranged in each growth crucible, a plurality of composite rings are arranged in the growth chamber, each composite ring is rotatably connected to the growth chamber, adjacent composite rings are engaged and rotatably connected, a heat preservation cover is rotatably connected to the growth tube, a temperature measuring module is arranged at the bottom end of the growth crucible, a pressure control module and a temperature control component are arranged in the growth tube, the temperature measuring module is electrically connected to the temperature control component through a wire, a vibration module is arranged in the growth chamber, a material stripping hydraulic rod is arranged in the growth tube, and the output end of the material stripping hydraulic rod is connected to the growth crucible. When growing, indium phosphide polycrystalline material, dopant and seed crystal are loaded into the growth tube. Long crucible, then rotate the insulation cover to seal the growth chamber, the pressure control module will comprehensively adjust the amount of nitrogen injected and feedback the internal pressure, nitrogen is injected into the growth chamber to keep the crystal in the quartz tube with the external pressure balance, to achieve comprehensive control of pressure and temperature during the growth of indium phosphide single crystals, reduce the formation of crystal twins, and then start the temperature control module, the temperature control module will perform segmented heating operation, and can also achieve segmented cooling, and use the transmission of the composite ring to make InP crystals of different layers more uniformly formed, the vibration module is also started, which can fully stabilize the growth surface of the InP crystal to avoid excessive protrusions, resulting in the problem of uneven density of the InP crystal during the growth process.

[0006] A transmission rod is arranged in the growth tube, and a plurality of friction wheels are fixedly connected to the transmission rod. The transmission rod is rotationally connected to the growth tube, the number of friction wheels is consistent with the number of composite rings, and the positions of the friction wheels correspond to the positions of the composite rings. A processing chamber is arranged at the bottom of the growth tube, and a processing motor is arranged in the processing chamber. The transmission rod passes through the processing chamber and is slidingly connected with the processing chamber. Conical teeth are arranged at the bottom of the transmission rod, and the output end of the processing motor meshes with the teeth on the transmission rod. During the growth process, the processing motor drives the transmission rod to rotate, and the friction wheels on the transmission rod will drive the composite rings of different layers to rotate to avoid excessive extension of the crystal. At the same time, it can also drive the flow of air, which can avoid the problem of adhesion of the crystal during the growth process, improve the molding smoothness of the product, and also avoid more errors when removing the material. In the transmission process, the temperature can be more evenly transferred to the InP crystal, so that the growth effect is better and the rate is more uniform.

[0007] The inner diameter of each composite ring is the same, and the outer diameter of the composite ring increases from top to bottom. An interlocking groove is arranged on the composite ring, and a lubricating roller is arranged in the interlocking groove in each composite ring. Adjacent composite rings are respectively embedded in the corresponding interlocking grooves. The outer diameter of the friction wheel decreases from top to bottom, and the friction wheel is in sliding contact with the corresponding composite ring. An insulation ring is arranged in the growth chamber. Under such a structural setting, the rotation speed of each layer of composite rings gradually changes to meet the growth requirements of different heights. The growth speed of the bottom layer is slower, and during the growth process, the bottom layer needs to be sufficiently stable during the growth process, otherwise there will be problems with crystal breakage. At the same time, there are more raw materials in the bottom layer. In order to avoid affecting the stability of the raw materials, low-speed rotation can better protect the growth raw materials, and the insulation ring can fully increase the heat transfer rate and avoid the influence of external temperature changes on the growth.

[0008] The temperature control module includes multiple temperature transfer columns and multiple conductive resistors, each conductive resistor is respectively arranged in the corresponding temperature transfer column, each temperature transfer column is respectively embedded in the growth chamber, a temperature control box is arranged in the processing chamber, each conductive resistor is electrically connected to the temperature control box through a wire, an intermittent heating ring is arranged in the growth chamber, a plurality of step heat transfer wheels are arranged on the intermittent heating ring, and the friction wheels are respectively in sliding contact with the corresponding step heat transfer wheels. During the growth process, the conductive resistor will detect the temperature in the growth chamber and cooperate with the temperature measurement module to detect the temperature changes at multiple positions. At the same time, the intermittent heating ring at each stage is regulated by the temperature control box, which can avoid the occurrence of twins caused by uneven temperature changes and reduce the influence of twins on crystal growth. At the same time, the friction wheel can also accelerate the transfer of heat, making the heat change more timely.

[0009] The vibration module includes a vibration diaphragm and a vibration ring. The vibration ring is arranged in the growth chamber. The vibration diaphragm is arranged on the vibration ring. The vibration ring is arranged above the composite ring. A vibration box is arranged on the heat preservation cover. A vibration frame is slidably connected to the vibration box. The vibration frame is in sliding contact with the composite ring. The vibration ring is connected to the growth chamber through supporting springs. A vibration convex column is arranged on the vibration box. The vibration module controls the change of the airflow in the composite ring. Under high pressure, different fluctuations will bring about strong pressure changes. By using the vibration box, the vibration diaphragm is driven to vibrate, which can fully make the airflow in the composite ring fluctuate and change, can fully squeeze the crystal surface, can reduce the problem of crystal surface protrusions, and can also control the crystal growth density and enhance the growth effect.

[0010] A vibration motor is arranged in the vibration box, an exciting cam is arranged on the output end of the vibration motor, a sliding thread and a sealing plug are arranged on the heat preservation cover, the heat preservation cover is meshed with the thread on the growth chamber, a sliding plate is arranged in the vibration box, the sliding plate is slidably connected with the inner wall of the vibration box, a reset spring is arranged in the vibration box, the two ends of the reset spring respectively press against the sliding plate and the inner wall of the vibration box, the vibration frame is fixedly connected with the sliding plate, and when the vibration motor drives the exciting cam to rotate, the exciting cam will squeeze the sliding plate, the sliding plate will slide in conjunction with the exciting cam, and drive the vibration frame to slide, squeeze the vibration ring, and cooperate with the vibration convex column to make the vibration diaphragm produce deformation impact, which can fully make the airflow produce a strong flow rate, thereby realizing the extrusion with the crystal growth surface, and matching with the rotation of the composite ring, so that the growth effect is enhanced.

[0011] An exhaust port and an air inlet are provided in the growth chamber, and an electric valve is provided on each exhaust port and air inlet respectively, and each electric valve is electrically connected to the pressure control module respectively. Pressure sensors are provided in the exhaust port and air inlet respectively, and each pressure sensor is electrically connected to the pressure control module respectively through a wire. The temperature control box is electrically connected to the pressure control module through a wire. During growth, pressure control in the growth chamber is very important. The pressure changes at various positions are detected by the pressure sensor, and the pressure in the growth chamber is controlled by the pressure control module, and the amount of gas in and out is controlled by the electric valve. At the same time, in order to avoid the problem of untimely measurement caused by temperature changes, the linkage in the temperature control box can be used to regulate the pressure changes in the growth chamber.

[0012] A detection row is provided on the growth tube, and an infrared detection board and an infrared receiving board are provided inside the detection row. A development screen is provided on the detection row, and the development screen is electrically connected to the infrared receiving board through a wire. During the growth process, the error caused by manual observation is usually large. By utilizing the temperature difference between the temperature inside the crystal and the temperature of the outer ring, the infrared detection board emits infrared light to determine the temperature difference of the crystal, and the infrared receiving board will transmit the detection result to the development screen, which is more intuitive to observe.

[0013] The VGF process is used for InP crystal growth process, which includes: S1. Prepare raw materials and feed the seed crystal raw materials into the growth seed crystal carrier; S2. The indium phosphide polycrystalline material, dopant, etc. are loaded into the growth crucible; S3. The pressure control module controls the pressure in the processing area and injects high-pressure nitrogen; S4. The intermittent heating ring generates different temperatures to achieve step-by-step temperature control and control the temperature in the growth chamber; S5. Cool down the processing area in stages; S6. Start the stripping hydraulic rod to send the generated InP crystal and the growth crucible out of the processing area.

[0014] Compared with the prior art, the present invention has the following beneficial effects: 1. The present invention has a structural component that automatically adjusts the growth pressure difference. By utilizing the structure of the composite ring and the vibration module, the product production can be made more uniform. At the same time, the produced crystal structure can also be made more uniform, reducing the generation of cracks and protrusions.

[0015] 2. The present invention adopts a structural component with automatic temperature control, and uses temperature control data to indirectly coordinate the pressure control component to regulate the pressure in the growth chamber, so as to avoid the problem of a large number of twins in the crystal due to untimely pressure changes during the growth process.

[0016] 3. The present invention adopts a structural component with enhanced heat transfer rate, taking advantage of the faster heat conduction rate between solids, which can fully reduce the twinning problem caused by slow temperature change and the problem of different product growth density. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a schematic diagram of the three-dimensional structure of the present invention; Figure 2 It is a schematic diagram of the internal structure of the growth tube of the present invention; Figure 3 for Figure 2 The structural schematic diagram of A is partially enlarged in the middle; Figure 4 for Figure 2 The structural schematic diagram of the partial enlargement of B in the middle; Figure 5 It is a schematic diagram of the top view of the growth tube structure of the present invention; Figure 6 It is a schematic diagram of the internal structure of the vibration box of the present invention; Figure 7 This is a schematic diagram of the structure of the matching relationship between the infrared detection board and the infrared receiving board of the present invention; Figure 8 It is a schematic diagram of the crystal production process of the present invention.

[0018] In the figure: 1, growth rack; 2, growth tube; 201, transmission rod; 202, friction wheel; 203, processing chamber; 204, processing motor; 205, fitting groove; 206, lubrication roller; 207, temperature insulation ring; 208, detection row; 209, infrared detection board; 210, infrared receiving board; 211, developing screen; 3, growth chamber; 301, exhaust port; 302, air inlet; 303, electric valve; 304, pressure sensor; 4, growth crucible; 5, seed crystal carrier; 6, composite ring; 7, protection Temperature cover; 8. Temperature measurement module; 801. Temperature transfer column; 802. Conductive resistor; 803. Temperature control box; 804. Intermittent heating ring; 805. Step heat transfer wheel; 9. Temperature control component; 10. Vibration module; 1001. Vibration diaphragm; 1002. Vibration ring; 1003. Vibration box; 1004. Vibration frame; 1005. Vibration boss; 1006. Vibration motor; 1007. Excitation cam; 1008. Sliding sheet; 1009. Reset spring; 11. Stripping hydraulic rod; 12. Pressure control module. DETAILED DESCRIPTION

[0019] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0020] Example: Figure 1-Figure 8As shown, the present invention provides a technical solution, the growth device includes a growth frame 1, a growth tube 2 is arranged on the growth frame 1, a plurality of growth chambers 3 are arranged inside the growth tube 2, a growth crucible 4 is arranged in each growth chamber 3, a seed crystal carrier 5 is arranged in each growth crucible 4, a plurality of composite rings 6 are arranged in the growth chamber 3, each composite ring 6 is rotatably connected to the growth chamber 3, adjacent composite rings 6 are engaged and rotatably connected, a heat preservation cover 7 is rotatably connected to the growth tube 2, a temperature measuring module 8 is arranged at the bottom end of the growth crucible 4, a pressure control module 12 and a temperature control component 9 are arranged in the growth tube 2, the temperature measuring module 8 is electrically connected to the temperature control component 9 through a wire, a vibration module 10 is arranged in the growth chamber 3, a stripping hydraulic rod 11 is arranged in the growth tube 2, the output end of the stripping hydraulic rod 11 is connected to the growth crucible 4, During growth, indium phosphide polycrystalline material, dopants and seed crystals are loaded into the growth crucible, and then the insulation cover is rotated to seal the growth chamber. The pressure control module will comprehensively adjust the amount of nitrogen injected and feedback the internal pressure. Nitrogen is injected into the growth chamber to keep the crystal in the quartz tube in balance with the external pressure, thereby achieving comprehensive control of pressure and temperature during the growth of indium phosphide single crystals and reducing the generation of crystal twins. Subsequently, the temperature control module is started, which will perform segmented heating operations and segmented cooling. By using the transmission of the composite ring, InP crystals of different layers can be formed more evenly. The vibration module is also started to fully stabilize the growth surface of the InP crystal to avoid excessive protrusions, which will cause the problem of uneven density of the InP crystal during the growth process.

[0021] A transmission rod 201 is arranged in the growth tube 2, and a plurality of friction wheels 202 are fixedly connected to the transmission rod 201. The transmission rod 201 is rotationally connected to the growth tube 2. The number of friction wheels 202 is consistent with the number of composite rings 6, and the position of friction wheels 202 corresponds to the position of composite rings 6. A processing chamber 203 is arranged at the bottom of the growth tube 2, and a processing motor 204 is arranged in the processing chamber 203. The transmission rod 201 passes through the processing chamber 203 and is slidingly connected with the processing chamber 203. Conical teeth are arranged at the bottom of the transmission rod 201, and the output end of the processing motor 204 meshes with the teeth on the transmission rod 201. During the growth process, the processing motor drives the transmission rod to rotate, and the friction wheels on the transmission rod will drive the composite rings of different layers to rotate to avoid excessive extension of the crystal. At the same time, it can also drive the flow of air, which can avoid the problem of adhesion of the crystal during the growth process, improve the molding smoothness of the product, and also avoid more errors when removing the material. In the transmission process, the temperature can be more evenly transferred to the InP crystal, so that the growth effect is better and the rate is more uniform.

[0022] The inner diameter of each composite ring 6 is the same, and the outer diameter of the composite ring 6 increases from top to bottom. An engaging groove 205 is provided on the composite ring 6. A lubricating roller 206 is provided in the engaging groove 205 in each composite ring 6. Adjacent composite rings 6 are respectively embedded in the corresponding engaging grooves 205. The outer diameter of the friction wheel 202 decreases from top to bottom. The friction wheel 202 is in sliding contact with the corresponding composite ring 6. An insulating ring 207 is provided in the growth chamber 3. Under such a structural setting, the rotation speed of each layer of composite rings gradually changes to meet the growth requirements of different heights. The growth speed of the bottom layer is slower, and during the growth process, the bottom layer needs to be sufficiently stable during the growth process, otherwise there will be problems with crystal fracture. At the same time, there are more raw materials in the bottom layer. In order to avoid affecting the stability of the raw materials, low-speed rotation can better protect the growing raw materials, and the insulating ring can fully increase the heat transfer rate and avoid the influence of external temperature changes on the growth.

[0023] The temperature control module includes multiple temperature transfer columns 801 and multiple conductive resistors 802, each conductive resistor 802 is respectively arranged in the corresponding temperature transfer column 801, each temperature transfer column 801 is respectively embedded in the growth chamber 3, a temperature control box 803 is arranged in the processing chamber 203, each conductive resistor 802 is electrically connected to the temperature control box 803 through a wire, an intermittent heating ring 804 is arranged in the growth chamber 3, and a plurality of step heat transfer wheels 805 are arranged on the intermittent heating ring 804. The friction wheels 202 are in sliding contact with the corresponding step heat transfer wheels 805 respectively. During the growth process, the conductive resistor will detect the temperature in the growth chamber and cooperate with the temperature measurement module to detect the temperature changes at multiple positions. At the same time, the intermittent heating ring at each stage is regulated by the temperature control box, which can avoid the occurrence of twins caused by uneven temperature changes and reduce the influence of twins on crystal growth. At the same time, the friction wheel can also accelerate the transfer of heat, making the heat change more timely.

[0024] The vibration module 10 includes a vibration diaphragm 1001 and a vibration ring 1002. The vibration ring 1002 is arranged in the growth chamber 3. The vibration diaphragm 1001 is arranged on the vibration ring 1002. The vibration ring 1002 is arranged above the composite ring 6. A vibration box 1003 is arranged on the heat preservation cover 7. A vibration frame 1004 is slidably connected to the vibration box 1003. The vibration frame 1004 is in sliding contact with the composite ring 6. The vibration ring 1002 is connected to the growth chamber 3 through a supporting spring. A vibration boss 1005 is arranged on the vibration box 1003. The vibration module controls the change of the airflow in the composite ring. Under high pressure, different fluctuations will bring about strong pressure changes. The vibration box is used to drive the vibration diaphragm to vibrate, which can fully make the airflow in the composite ring fluctuate and change, can fully squeeze the crystal surface, can reduce the problem of crystal surface protrusions, and can also control the crystal growth density and enhance the growth effect.

[0025] A vibration motor 1006 is arranged in the vibration box 1003, and an exciting cam 1007 is arranged on the output end of the vibration motor 1006. A sliding thread and a sealing plug are arranged on the heat preservation cover 7, and the heat preservation cover 7 is meshed with the thread on the growth chamber 3. A sliding piece 1008 is arranged in the vibration box 1003, and the sliding piece 1008 is slidably connected with the inner wall of the vibration box 1003. A return spring 1009 is arranged in the vibration box 1003, and the two ends of the return spring 1009 respectively abut against the sliding piece 1008 and the inner wall of the vibration box 1003. The vibration frame 1004 is fixedly connected with the sliding piece 1008. When the vibration motor drives the exciting cam to rotate, the exciting cam will squeeze the sliding piece, and the sliding piece will slide in conjunction with the exciting cam, and drive the vibration frame to slide, squeeze the vibration ring, and cooperate with the vibration convex column to make the vibration diaphragm produce deformation impact, which can fully make the airflow produce a strong flow rate, thereby realizing the extrusion with the crystal growth surface, and matching with the rotation of the composite ring, so that the growth effect is enhanced.

[0026] An exhaust port 301 and an air inlet 302 are provided in the growth chamber 3, and an electric valve 303 is provided on each exhaust port 301 and air inlet 302 respectively, and each electric valve 303 is electrically connected to the pressure control module 12 respectively, and a pressure sensor 304 is provided in the exhaust port 301 and air inlet 302 respectively, and each pressure sensor 304 is electrically connected to the pressure control module 12 through a wire, and the temperature control box 803 is electrically connected to the pressure control module 12 through a wire. During growth, pressure control in the growth chamber is very important. The pressure changes at various positions are detected by the pressure sensor, and the pressure in the growth chamber is controlled by the pressure control module, and the amount of gas in and out is controlled by the electric valve. At the same time, in order to avoid the problem of untimely measurement caused by temperature changes, the linkage in the temperature control box can be used to regulate the pressure changes in the growth chamber.

[0027] A detection row 208 is provided on the growth tube 2, and an infrared detection board 209 and an infrared receiving board 210 are provided inside the detection row 208. A development screen 211 is provided on the detection row 208, and the development screen 211 is electrically connected to the infrared receiving board 210 through a wire. During the growth process, the error caused by manual observation is usually large. By using the temperature difference between the temperature inside the crystal and the temperature of the outer ring, the infrared detection board emits infrared light to determine the temperature difference of the crystal, and the infrared receiving board will transmit the detection result to the development screen, which is more intuitive to observe.

[0028] The VGF process is used for InP crystal growth process, which includes: S1. Prepare raw materials and feed the seed crystal raw materials into the growth seed crystal carrier 5; S2. The indium phosphide polycrystalline material, dopant, etc. are loaded into the growth crucible 4; S3. The pressure control module 12 controls the pressure in the processing area and injects high-pressure nitrogen; S4. The intermittent heating ring 804 generates different temperatures to achieve stepped temperature control and control the temperature in the growth chamber; S5. Cool down the processing area in stages; S6. Start the stripping hydraulic rod 11 to send the generated InP crystal and the growth crucible 4 out of the processing area.

[0029] Working principle: During the growth, indium phosphide polycrystalline material, dopant and seed crystal are loaded into the growth crucible 4, and the seed crystal is sent into the seed crystal carrier 5, and then the heat preservation cover 7 is rotated to seal the growth chamber 3, and the pressure change at each position is detected by the pressure sensor 304. The pressure in the growth chamber 3 is controlled by the pressure control module 12, and nitrogen is injected into the growth chamber 3 to keep the crystal in the quartz tube balanced with the external pressure. At the same time, the intermittent heating ring 804 at each stage is regulated by the temperature control box 803, and the conductive resistor 802 will detect the temperature in the growth chamber and cooperate with the temperature measurement module 8 to realize the comprehensive control of pressure and temperature during the growth of indium phosphide single crystal, thereby reducing To produce low crystal twins, the processing motor 204 drives the transmission rod 201 to rotate, and the friction wheel 202 on the transmission rod 201 will drive the composite rings 6 of different layers to rotate. The transmission of the composite rings 6 can make the InP crystals of different layers more uniformly formed. The vibration module 10 is also started, and the vibration motor 1006 drives the excitation cam 1007 to rotate. The excitation cam 1007 will squeeze the sliding plate 1008, drive the vibration frame 1004 to slide, and squeeze the vibration ring 1004. In conjunction with the vibration boss 1005, the vibration diaphragm can produce a deformation impact, which can fully stabilize the growth surface of the InP crystal and avoid excessive protrusions.

[0030] It will be apparent to those skilled in the art that the invention is not limited to the details of the exemplary embodiments described above and that the invention can be implemented in other specific forms without departing from the spirit or essential features of the invention. Therefore, the embodiments should be considered exemplary and non-limiting in all respects, and the scope of the invention is defined by the appended claims rather than the foregoing description, and it is intended that all variations falling within the meaning and scope of the equivalent elements of the claims be included in the invention. Any reference numeral in a claim should not be considered as limiting the claim to which it relates.

Claims

1. An InP crystal growth device based on the VGF process, characterized in that: The growth device comprises a growth frame (1), a growth tube (2) being arranged on the growth frame (1), a plurality of growth chambers (3) being arranged inside the growth tube (2), a growth crucible (4) being arranged in each of the growth chambers (3), a seed crystal carrier (5) being arranged in each of the growth crucibles (4), a plurality of composite rings (6) being arranged in the growth chamber (3), each of the composite rings (6) being rotationally connected to the growth chamber (3), and adjacent composite rings (6) being engaged and rotationally connected. The growth tube (2) is rotatably connected to a heat-insulating cover (7), the bottom end of the growth crucible (4) is provided with a temperature measuring module (8), a pressure control module (12) and a temperature control component (9) are provided in the growth tube (2), the temperature measuring module (8) is electrically connected to the temperature control component (9) via a wire, a vibration module (10) is provided in the growth chamber (3), a stripping hydraulic rod (11) is provided in the growth tube (2), and an output end of the stripping hydraulic rod (11) is connected to the growth crucible (4).

2. The InP crystal growth device based on the VGF process according to claim 1, characterized in that: A transmission rod (201) is arranged inside the growth tube (2), a plurality of friction wheels (202) are fixedly connected to the transmission rod (201), the transmission rod (201) is rotationally connected to the growth tube (2), the number of the friction wheels (202) is consistent with the number of the composite rings (6), and the positions of the friction wheels (202) correspond to the positions of the composite rings (6), a processing chamber (203) is arranged at the bottom end of the growth tube (2), a processing motor (204) is arranged in the processing chamber (203), the transmission rod (201) passes through the processing chamber (203) and is slidably connected to the processing chamber (203), a conical tooth is arranged at the bottom end of the transmission rod (201), and an output end of the processing motor (204) meshes with the tooth on the transmission rod (201).

3. The InP crystal growth device based on the VGF process according to claim 2, characterized in that: The inner diameter of each of the composite rings (6) is the same, and the outer diameter of the composite rings (6) increases from top to bottom. The composite rings (6) are provided with an embedding groove (205), and a lubricating roller (206) is respectively provided in the embedding groove (205) in each of the composite rings (6). Adjacent composite rings (6) are respectively embedded in the corresponding embedding groove (205). The outer diameter of the friction wheel (202) decreases from top to bottom, and the friction wheel (202) is in sliding contact with the corresponding composite ring (6). A temperature insulation ring (207) is provided in the growth chamber (3).

4. The InP crystal growth device based on the VGF process according to claim 3 is characterized in that: The temperature control module comprises a plurality of temperature transfer columns (801) and a plurality of conductive resistors (802), each of the conductive resistors (802) being arranged in a corresponding temperature transfer column (801), each of the temperature transfer columns (801) being embedded in a growth chamber (3), a temperature control box (803) being arranged in the processing chamber (203), each of the conductive resistors (802) being electrically connected to the temperature control box (803) via a wire, an intermittent heating ring (804) being arranged in the growth chamber (3), a plurality of stepped heat transfer wheels (805) being arranged on the intermittent heating ring (804), and the friction wheels (202) being in sliding contact with the corresponding stepped heat transfer wheels (805).

5. The InP crystal growth device based on the VGF process according to claim 1, characterized in that: The vibration module (10) comprises a vibration diaphragm (1001) and a vibration ring (1002); the vibration ring (1002) is arranged in a growth chamber (3); the vibration diaphragm (1001) is arranged on the vibration ring (1002); the vibration ring (1002) is arranged above a composite ring (6); a vibration box (1003) is arranged on the heat-insulating cover (7); a vibration frame (1004) is slidably connected to the vibration box (1003); the vibration frame (1004) is in sliding contact with the composite ring (6); the vibration ring (1002) is connected to the growth chamber (3) via a supporting spring; and a vibration boss (1005) is arranged on the vibration box (1003).

6. The InP crystal growth device based on the VGF process according to claim 5, characterized in that: A vibration motor (1006) is arranged in the vibration box (1003), an excitation cam (1007) is arranged on the output end of the vibration motor (1006), a sliding thread and a sealing plug are arranged on the heat-insulating cover (7), the heat-insulating cover (7) is meshed with the thread on the growth chamber (3), a sliding sheet (1008) is arranged in the vibration box (1003), the sliding sheet (1008) is slidably connected to the inner wall of the vibration box (1003), a return spring (1009) is arranged in the vibration box (1003), two ends of the return spring (1009) respectively abut against the sliding sheet (1008) and the inner wall of the vibration box (1003), and the vibration frame (1004) is fixedly connected to the sliding sheet (1008).

7. The InP crystal growth device based on the VGF process according to claim 4, characterized in that: An exhaust port (301) and an air inlet (302) are provided in the growth chamber (3); each of the exhaust port (301) and the air inlet (302) is provided with an electric valve (303); each of the electric valves (303) is electrically connected to a pressure control module (12); a pressure sensor (304) is provided in the exhaust port (301) and the air inlet (302); each of the pressure sensors (304) is electrically connected to the pressure control module (12) via a wire; and the temperature control box (803) is electrically connected to the pressure control module (12) via a wire.

8. The InP crystal growth device based on the VGF process according to claim 3, characterized in that: The growth tube (2) is provided with a detection row (208), an infrared detection board (209) and an infrared receiving board (210) are provided inside the detection row (208), a development screen (211) is provided on the detection row (208), and the development screen (211) is electrically connected to the infrared receiving board (210) via a wire.

9. A process for growing InP crystals based on a VGF process, characterized in that: The growth process includes: S1. Prepare raw materials and deliver seed crystal raw materials into the processing area; S2. The indium phosphide polycrystalline material, dopant, etc. are loaded into the crucible; S3. Control the pressure in the processing area and inject high-pressure nitrogen; S4. Use stepped temperature control to control the temperature in the processing area; S5. Cool down the processing area; S6. Send the generated InP crystal out of the processing area.

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