Maintenance device and maintenance method for molecular beam epitaxy equipment

Abstract

The invention provides a maintenance device and a maintenance method for molecular beam epitaxy equipment, the device comprises a first structural member, the first structural member comprises an isolation baffle processing part, and the isolation baffle processing part comprises a first shell, a heater and a collector; the first shell is provided with a first inner cavity; the first inner cavity comprises a first sub-cavity and a second sub-cavity which are communicated with each other; a first butt joint piece communicated with the first inner cavity is arranged on the wall of the first shell, and the first butt joint piece and the second sub-cavity are oppositely arranged; the heater and the collector are arranged in the second sub-chamber, and the heater is arranged around the axis of the first butt joint piece; the collector is located on the side of the heater away from the first docking piece. The maintenance device is used for storing and cleaning the isolation baffle detached from the equipment in the maintenance process of the molecular beam epitaxy equipment, and no pollution source is introduced when the cleaned isolation baffle is reinstalled back to the molecular beam epitaxy equipment, so that the quality of a crystal film grown by using the molecular beam epitaxy equipment is ensured.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductors, and in particular relates to a maintenance device and a maintenance method for molecular beam epitaxy equipment. Background Art

[0002] Molecular beam epitaxy refers to placing different high-purity materials in the crucibles of different source furnaces. The source furnaces are provided with electric heating wires to electrically heat the crucibles, thereby accurately controlling the temperature of the furnace bottom and the furnace mouth, and allowing various high-purity materials to form steam. After the various steams form beams, they are simultaneously sprayed onto a substrate at a predetermined temperature in a predetermined proportion, so that a crystalline film grows on the substrate. When the molecular beam epitaxy equipment is working, the opening of each source furnace mouth is adjusted by adjusting the isolation baffles set at the furnace mouth of each source furnace to achieve the adjustment of the type of epitaxially grown crystalline film.

[0003] Molecular beam epitaxy equipment requires regular maintenance, and the maintenance cycle is generally once every 12 months or once every 16 months. The maintenance operations include: under the premise that the molecular beam epitaxy equipment is in maintenance status, the liquid nitrogen and water in the molecular beam epitaxy equipment are discharged, and the source furnace is at room temperature; then high-purity nitrogen is introduced into the molecular beam epitaxy equipment so that the air pressure in the molecular beam epitaxy equipment reaches atmospheric pressure; then the high-temperature-sensitive components, source furnace and isolation baffle in the molecular beam epitaxy equipment are removed; then, the substrate heater and liquid nitrogen cold shield are lifted, and the substrate heater and liquid nitrogen cold shield are physically and chemically cleaned, and the high-purity metal remaining on the isolation baffle is manually physically cleaned in the air; then, the source furnace and isolation baffle are installed to the corresponding positions of the molecular beam epitaxy equipment; then, the molecular beam epitaxy equipment is baked, and the source furnace is heated up for degassing.

[0004] Among them, the physical cleaning operation of the high-purity metal remaining on the isolation baffle is mainly scraping and wiping. This cleaning method is difficult to clean the high-purity metal remaining on the isolation baffle, and the high-purity metal that is not cleaned is oxidized in the air. In addition, particles and other substances in the air will also adhere to the isolation baffle. When the cleaned isolation baffle is installed on the molecular beam epitaxy equipment, the oxidized high-purity metal, particles attached to the isolation baffle and other substances are introduced into the molecular beam epitaxy equipment, becoming a pollution source, which has an adverse effect on subsequent production. Summary of the invention

[0005] The object of the present invention is to provide a maintenance device and a maintenance method for a molecular beam epitaxy device, aiming to reduce pollutants introduced during the maintenance of the molecular beam epitaxy device and improve the growth quality of the crystalline thin film.

[0006] To achieve the above object, the present invention provides a maintenance device for a molecular beam epitaxy device, comprising a first structural member, wherein the first structural member comprises at least one isolation baffle processing portion, wherein the isolation baffle processing portion comprises:

[0007] A first shell has a first inner cavity, wherein the first inner cavity includes a first sub-chamber and a second sub-chamber that are connected to each other; a first docking piece connected to the first inner cavity is provided on a wall of the first shell, and the first docking piece is arranged opposite to the second sub-chamber;

[0008] a heater, disposed in the second sub-chamber and arranged around the axis of the first docking piece; and

[0009] The collector is arranged in the second sub-chamber and located at a side of the heater away from the first docking piece.

[0010] Optionally, the first inner cavity includes a plurality of second sub-chambers, and the plurality of second sub-chambers are spaced apart along the axial direction of the first sub-chamber;

[0011] The isolation baffle processing part includes a plurality of the first docking parts, a plurality of the heaters, and a plurality of the collectors; the plurality of the first docking parts are arranged at intervals along the axial direction of the first sub-chamber and correspond one-to-one to the plurality of the second sub-chambers; one heater and one collector are arranged in each of the second sub-chambers.

[0012] Optionally, the first sub-chamber extends axially through the first shell; the first structural member includes a plurality of the isolation baffle processing parts, and the first shell of the plurality of the isolation baffle processing parts are coaxially arranged and detachably connected in sequence.

[0013] Optionally, the maintenance device further comprises a second structural member and a valve;

[0014] The second structural member includes at least one source furnace storage portion, and the source furnace storage portion includes a second shell; the second shell has a second inner cavity, and a second docking piece communicating with the second inner cavity is provided on the wall of the second shell;

[0015] The valve is disposed between the first structural member and the second structural member;

[0016] The maintenance device is configured to control the connection and disconnection of the first inner cavity and the second inner cavity by opening and closing the valve.

[0017] Optionally, an observation hole communicating with the second inner cavity is further provided on the wall of the second shell, and the observation hole is arranged opposite to the second docking piece;

[0018] The source furnace storage portion further includes a window assembly, which is disposed at the observation hole and includes a transparent observation sheet, and the observation sheet covers the observation hole.

[0019] Optionally, the window assembly also includes an observation film baffle and an adjustment member; the observation film baffle is arranged on a side of the observation film close to the second docking member; the adjustment member is connected to the observation film baffle and partially extends to the outside of the second shell, and the adjustment member is configured to drive the observation film baffle to move under the action of an external force so that the observation film baffle blocks the observation film or releases the blocking of the observation film.

[0020] Optionally, the source furnace retaining portion includes a plurality of the second docking members, and the plurality of the second docking members are arranged at intervals along the axial direction of the second shell.

[0021] Optionally, the second inner cavity extends axially through the second shell; the second structural member includes a plurality of the source furnace storage parts, and the second shells of the plurality of the source furnace storage parts are coaxially arranged and detachably connected in sequence.

[0022] To achieve the above object, the present invention further provides a maintenance method for a molecular beam epitaxy device, which is performed based on the above maintenance device and is characterized in that the maintenance method comprises:

[0023] The isolation baffle removed from the molecular beam epitaxy device is arranged on the maintenance device; the isolation baffle is connected to the first docking piece, a baffle body of the isolation baffle passes through the first sub-chamber and at least partially extends to the second sub-chamber, and the baffle body is located on a side of the heater close to the axis of the first docking piece and on a side of the collector facing the first docking piece;

[0024] Using a vacuum pump group to evacuate the first inner cavity so that the first inner cavity is maintained in a high vacuum state;

[0025] operating the heater to heat the isolation baffle; and,

[0026] The heat-treated isolation baffle is removed from the maintenance device, and the heat-treated isolation baffle is installed in the molecular beam epitaxy equipment.

[0027] Optionally, the maintenance device further includes a second structural member, the second structural member includes a source furnace storage portion and a valve, the source furnace storage portion includes a second shell, the second shell has a second inner cavity, and a second docking member communicating with the second inner cavity is provided on the wall of the second shell; the valve is provided between the first structural member and the second structural member, and the maintenance device is configured to control the connection and disconnection of the first inner cavity and the second inner cavity by opening and closing the valve;

[0028] The maintenance method further comprises:

[0029] The source furnace is arranged on the maintenance device; the source furnace is connected to the second docking piece, and the crucible of the source furnace is at least partially located in the second inner cavity;

[0030] Opening the valve to keep the second inner cavity in a high vacuum state;

[0031] heating the source furnace to degas the source furnace; and,

[0032] The degassed source furnace is removed from the maintenance equipment, and the degassed source furnace is installed in the molecular beam epitaxy equipment.

[0033] Optionally, the source furnace is a source furnace removed from the molecular beam epitaxy equipment; or,

[0034] The source furnace is an unused source furnace; or,

[0035] The source furnace comprises a furnace body and a crucible arranged in the furnace body, and the crucible is an unused crucible.

[0036] Compared with the prior art, the maintenance device and maintenance method of the molecular beam epitaxy equipment of the present invention have the following advantages:

[0037] The maintenance device of the aforementioned molecular beam epitaxy equipment includes a first structural member, the first structural member includes at least one isolation baffle processing part, the isolation baffle processing part includes a first shell, a heater and a collector; the first shell is a hollow structure with a first inner cavity; the first inner cavity includes a first sub-chamber and a second sub-chamber connected to each other; a first docking piece connected to the first inner cavity is provided on the wall of the first shell, and the first docking piece is arranged opposite to the second sub-chamber; the heater is arranged in the second sub-chamber and arranged around the axis of the first docking piece; the collector is arranged in the second sub-chamber and is located on the side of the heater away from the first docking piece. The maintenance device is used during the maintenance of the molecular beam epitaxy device. When in use, the first docking piece is located above the second sub-chamber, and the first structural member is connected to the vacuum pump group, so that the vacuum pump group is used to evacuate the first inner cavity, so that the first inner cavity is kept in a high vacuum state; the isolation baffle removed from the molecular beam epitaxy device is set on the maintenance device through the first docking piece, specifically, the isolation baffle is connected to the first docking piece, and the baffle body of the isolation baffle passes through the first sub-chamber and at least partially extends into the second sub-chamber, and the baffle body is located on the side of the heater close to the axis of the first docking piece, and the baffle body is also located on the side of the collector close to the first docking piece, and the heater is used to heat the isolation baffle, so that the high-purity metal remaining on the isolation baffle melts in a vacuum environment and drips into the collector, so as to effectively clean the isolation baffle. In this way, when the cleaned isolation baffle is reinstalled back into the molecular beam epitaxy device, no pollution source is introduced, and the quality reliability of the crystalline film grown by the molecular beam epitaxy device is effectively guaranteed.

[0038] Furthermore, the maintenance device also includes a source furnace storage part and a valve, the source furnace storage part includes a second shell, the second shell has a second inner cavity, and a second docking piece connected to the second inner cavity is provided on the wall of the second shell; the second shell is connected to the first shell, the valve is arranged between the first inner cavity and the second inner cavity, and the maintenance device is configured to control the connection and disconnection of the first inner cavity and the second inner cavity by opening and closing the valve. When maintaining the molecular beam epitaxy equipment, the maintenance device can also be used to preserve the source furnace and make the source furnace in a high vacuum state equivalent to that when the molecular beam epitaxy equipment is working normally, which is beneficial to shorten the high-temperature degassing time when the maintenance is completed and the molecular beam epitaxy equipment is restored, thereby shortening the idle time of the molecular beam epitaxy equipment.

[0039] In particular, when it is necessary to replace a new source furnace or a crucible of the source furnace, high-temperature degassing of the new source furnace or the new crucible can be performed in advance using the maintenance device, which can reduce the number of cavity openings of the molecular beam epitaxy equipment and thereby shorten the idle time of the molecular beam epitaxy equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] The accompanying drawings are used to better understand the present invention and do not constitute an improper limitation of the present invention.

[0041] Figure 1 It is a structural schematic diagram of a maintenance device for a molecular beam epitaxy device provided according to an embodiment of the present invention, and shows an isolation baffle processing part and a source furnace storage part;

[0042] Figure 2 yes Figure 1 AA cross-sectional view of a maintenance device for a molecular beam epitaxy device shown;

[0043] Figure 3 yes Figure 1 A schematic diagram of an application scenario of a maintenance device for a molecular beam epitaxy device shown;

[0044] Figure 4 It is a partial structural schematic diagram of a maintenance device for a molecular beam epitaxy device provided according to an embodiment of the present invention, and two isolation baffle processing parts are shown in the figure;

[0045] Figure 5 It is a partial structural schematic diagram of a maintenance device for molecular beam epitaxy equipment provided according to an embodiment of the present invention, and two source furnace storage parts are shown in the figure.

[0046] [Description of reference numerals is as follows]:

[0047] 1-maintenance device, 10-first structural member, 101-vacuum pump group interface, 100-isolation baffle processing part, 110-first shell, 111-first inner cavity, 1111-first sub-chamber, 1112-second sub-chamber, 112-first docking piece, 1121-first docking pipe, 1122-first docking piece body, 113-fourth docking piece, 120-heater, 121-plug, 130-collector, 20-second structural member, 200-source furnace holding part, 210-second shell, 211-second inner cavity, 212-second docking piece, 2121- Second docking tube, 2122-second docking piece body, 213-observation hole, 214-third docking piece, 2141-third docking tube, 2142-third docking piece body, 215-fifth docking piece, 220-window assembly, 221-observation piece, 222-observation piece baffle, 223-adjusting piece, 224-third shell, 225-third joint, 230-pressure detection element, 30-valve, 2-isolation baffle, 21-baffle body, 22-connecting rod, 23-first joint, 3-source furnace, 31-furnace body, 32-crucible, 33-second joint. DETAILED DESCRIPTION

[0048] The following is an explanation of the embodiments of the present invention by specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the illustrations provided in the present embodiment only illustrate the basic concept of the present invention in a schematic manner, and only the components related to the present invention are shown in the figure instead of being drawn according to the number, shape and size of the components in the actual implementation. The type, quantity and proportion of each component in the actual implementation can be a random change, and the component layout type may also be more complicated.

[0049] In addition, each embodiment of the following description has one or more technical features, but this does not mean that the user of the present invention must implement all the technical features in any embodiment at the same time, or can only implement part or all of the technical features in different embodiments separately. In other words, under the premise that implementation is possible, those skilled in the art can selectively implement part or all of the technical features in any embodiment according to the disclosure of the present invention and according to the design specifications or implementation requirements, or selectively implement a combination of part or all of the technical features in multiple embodiments, thereby increasing the flexibility of the implementation of the present invention.

[0050] As used in this specification, the singular forms "one", "an", and "the" include plural objects, and the plural form "a plurality" includes more than two objects, unless the content clearly indicates otherwise. As used in this specification, the term "or" is generally used in a sense that includes "and / or", unless the content clearly indicates otherwise, and the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection. It can be a mechanical connection or an electrical connection. It can be directly connected or indirectly connected through an intermediate medium, and it can be a connection between two elements or an interactive relationship between two elements. Relational terms such as the terms "first", "second", etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations, nor do they indicate or imply relative importance or implicitly indicate the number of technical features indicated. It should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "axial", "radial", "circumferential" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0051] The purpose of the present invention is to provide a maintenance device and a maintenance method for molecular beam epitaxy equipment, aiming to improve the maintenance effect of the molecular beam epitaxy equipment, reduce the pollution sources introduced into the molecular beam epitaxy equipment during the maintenance process, and thus improve the quality of the crystalline film grown using the molecular beam epitaxy equipment.

[0052] In order to make the purpose, advantages and features of the present invention more clear, the present invention is further described in detail below with reference to the accompanying drawings. It should be noted that the drawings are all in very simplified form and in non-precise proportions, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. The same or similar reference numerals in the drawings represent the same or similar components.

[0053] Figure 1 The structure diagram of the maintenance device 1 for molecular beam epitaxy equipment provided by some embodiments of the present invention is shown. Figure 2 yes Figure 1 The AA cross-sectional view of the maintenance device 1 shown, Figure 4It is a schematic structural diagram of a maintenance device 1 for a molecular beam epitaxy device provided in some other embodiments of the present invention.

[0054] like Figure 1 , Figure 2 and Figure 4 As shown, the maintenance device 1 includes a first structural member 10, and the first structural member 10 includes at least one isolation baffle processing part 100. The isolation baffle processing part 100 includes a first shell 110, a heater 120 and a collector 130. The first shell 110 is a hollow structure with a first inner cavity 111, and the first inner cavity 111 includes a first sub-chamber 1111 and a second sub-chamber 1112, and the first sub-chamber 1111 and the second sub-chamber 1112 are connected to each other. A first docking member 112 is provided on the wall of the first shell 110, and the first docking member 112 is connected to the first inner cavity 110, and the first docking member 112 is also arranged opposite to the second sub-chamber 1112. The heater 120 and the collector 130 are both arranged in the second sub-chamber 1112, and the heater 120 is arranged around the axis of the first docking member 112, and the collector 130 is located on the side of the heater 120 away from the first docking member 112.

[0055] The maintenance device 1 is used during the maintenance process of the molecular beam epitaxy equipment. Figure 3 A schematic diagram of an application scenario of the maintenance device 1 is shown, such as Figure 3 As shown, the maintenance device 1 is at least used to store and clean the isolation baffle 2 removed from the molecular beam epitaxy device.

[0056] The first structural member 10 also includes at least one vacuum pump group interface 101. The vacuum pump group interface 101 is used to connect to a vacuum pump group (not shown in the figure) during the use of the maintenance device 1, and the vacuum pump group is used to evacuate the first inner cavity 111 of the isolation baffle processing part 100 so that the first inner cavity 111 is maintained in a high vacuum state. In other words, during the normal use of the maintenance device 1, the first inner cavity 111 is isolated from the atmospheric environment outside the maintenance device 1 by any suitable means. In addition, during the actual use of the maintenance device 1, the first docking member 112, the first sub-chamber 1111, and the second sub-chamber 1112 are arranged in sequence from top to bottom, so that the collector 130 is located below the heater 120. In addition, the "high vacuum state" mentioned in the embodiment of the present invention refers to a pressure of less than 10 -6 Torr's status.

[0057] Please refer to Figure 3, the isolation baffle 2 includes a baffle body 21, a connecting rod 22 and a first joint 23 connected in sequence. The process of using the maintenance device 1 to preserve and clean the isolation baffle 2 includes: after the isolation baffle 2 is disassembled from the molecular beam epitaxy device, the baffle body 21 passes through the first docking piece 112 and the first sub-chamber 1111 in sequence and at least partially enters the second sub-chamber 1112, and is located on the side of the heater 120 close to the axis of the first docking piece 112, and is located on the side of the collector 130 close to the first docking piece 112 (that is, the isolation baffle 2 is located above the collector 130), and then the first joint 23 is connected to the first docking piece 112. Then, the vacuum pump group is controlled to operate until the first inner cavity 111 is maintained in a high vacuum state. Finally, the heater 120 is controlled to operate to heat the isolation baffle 2.

[0058] It should be understood that the heater 120 is connected to an external power source through a plug 121, and the parameters of the heater 120 during operation are set according to actual conditions, and the heat generated by the heater 120 can melt the high-purity metal remaining on the isolation baffle 2. In this way, the high-purity metal remaining on the isolation baffle 2 can be melted into a liquid and drip onto the collector 130. Compared with the cleaning method of the isolation baffle 2 in the prior art, the application of the maintenance device 1 provided in the embodiment of the present invention, on the one hand, does not cause the particles in the air to adhere to the isolation baffle 2 and cause the isolation baffle 2 to be polluted by the air, and on the other hand, it can also basically clean the high-purity metal remaining on the isolation baffle 2 completely, even if there is still a small amount of high-purity metal remaining, the high-purity metal will not be oxidized. In this way, when the isolation baffle 2 after cleaning is reinstalled back into the molecular beam epitaxy device, the pollution source will basically not be introduced into the molecular beam epitaxy device, which effectively improves the maintenance effect of the molecular beam epitaxy device and improves the quality of the crystalline film grown by the molecular beam epitaxy device.

[0059] It should be noted that the first docking member 112 includes a first docking tube 1121 and a first docking member body 1122, the first docking tube 1121 is connected to the first shell 100, and the lumen of the first docking tube 1121 is in communication with the first inner cavity 110, and the first docking member body 1122 is disposed on an end of the first docking tube 1121 away from the first shell 100. “The first joint 23 is connected to the first docking member 112” means that the first joint 23 is connected to the first docking member body 1122. In addition, the heater 120 may include a heating wire.

[0060] Further, the maintenance device 1 also includes a second structural member 20 and a valve 30. The second structural member 20 includes at least one source furnace storage part 200. The source furnace storage part 200 includes a second shell 210, and the second shell 210 has a second inner cavity 211. A second docking member 212 is provided on the wall of the second shell 210, and the second docking member 212 is connected to the second inner cavity 211. The first structural member 10 and the second structural member 20 are connected through the valve 30. The maintenance device 1 is configured to control the connection and disconnection of the second inner cavity 211 and the first inner cavity 111 by opening and closing the valve 30. That is, when the valve 30 is opened, the first inner cavity 111 is connected to the second inner cavity 211; when the valve 30 is closed, the first inner cavity 111 is isolated from the second inner cavity 211.

[0061] Typically, during normal use of the maintenance device 1, the second docking member 212 is located below the second inner cavity 211. The second structural member 20 is used to store the source furnace 3.

[0062] The source furnace 3 includes a furnace body 31, a crucible 32 and a second joint 33, wherein the crucible 32 is detachably connected to the furnace body 31, and the second joint 33 is disposed on the furnace body 31. The process of using the second structural member 20 to store the source furnace 3 is as follows: first, the crucible 32 of the source furnace 3 is sent into the interior of the source furnace storage part 200 from the second docking member 212, and then the second joint 33 and the second docking member 212 are connected, and then the valve 30 is opened, so that the second inner cavity 211 also reaches a high vacuum state under the action of the vacuum pump group.

[0063] Optionally, a pressure detection element 230 is further provided on the second housing 210, which is used to detect the pressure in the second inner cavity 311. The pressure detection element 230 is, for example, a vacuum gauge.

[0064] Those skilled in the art will appreciate that the furnace body 31 includes a heating wire (not shown). After the second inner cavity 211 reaches a high vacuum state, the heating wire can be controlled to operate so as to perform a high-temperature degassing operation on the crucible 32 in a high vacuum environment.

[0065] The source furnace 3 stored on the second structural member 20 may be an old source furnace removed from the molecular beam epitaxy device, or a brand new source furnace that has not been used, or a source furnace with an updated crucible (i.e., the furnace body 31 of the source furnace is old, but the crucible 32 is new). This embodiment of the present invention is not limited to this.

[0066] It should be noted that the second docking member 212 includes a second docking tube 2121 and a second docking member body 2122, the second docking tube 2121 is connected to the second shell 210 and communicates with the second inner cavity 211, and the second docking member body 2122 is disposed at an end of the second docking tube 2121 away from the second shell 210. “Connecting the second docking member 212 to the second joint portion 33” means connecting the second docking member body 2122 to the second joint portion 33.

[0067] Next, the configuration of the maintenance device 1 is described in further detail.

[0068] The first housing 110 has a first end and a second end that are axially opposite to each other, and the second housing 210 has a third end and a fourth end that are axially opposite to each other.

[0069] In some embodiments, the first structural member 10 includes an isolation baffle processing portion 100. The first sub-chamber 1111 at least penetrates the first end of the first shell 110. The second structural member 20 includes a source furnace storage portion 200. The second shell 210 has a third end and a fourth end axially opposite to each other, and the second inner cavity 211 at least penetrates the third end of the second shell 210. The valve 30 is connected to the first end of the first shell 110 and the third end of the second shell 210 respectively. In this way, when the valve 30 is opened, the first inner cavity 111 is connected to the second inner cavity 211, and when the valve 30 is closed, the first inner cavity 111 is isolated from the second inner cavity 211.

[0070] Of course, the first sub-chamber 1111 may also pass through the second end of the first shell 110. In this case, the maintenance device 1 further includes a sealing structure (not shown in the figure), and the second end of the first shell 110 is provided with the sealing structure, so as to use the sealing structure to block the first inner cavity 111 at the second end of the first shell 110. Similarly, the second inner cavity 211 may also pass through the fourth end of the second shell 210. In this case, the fourth end of the second shell 210 is provided with the sealing structure, so as to use the sealing structure to block the second inner cavity 211 at the fourth end of the second shell 210.

[0071] In other embodiments, Figure 4As shown, the first structural member 10 includes a plurality of the isolation baffle processing parts 100. At this time, the first sub-chamber 1111 extends through the axial direction of the first shell 110, and the first shells 110 of the plurality of isolation baffle processing parts 100 are coaxially arranged and detachably connected in sequence. And, the first shell 110 of one isolation baffle processing part 100 located at one axial end of the first structural member 10 is connected to the second structural member 20 through the valve 30. In other words, the number of the isolation baffle processing parts 100 included in the maintenance device 1 is adjustable, so that the operator can adjust the number of the isolation baffle processing parts 100 according to actual needs, so as to store and process a plurality of the isolation baffles 2 at one time.

[0072] It should be understood that when the first structural member 10 includes a plurality of the isolation baffle processing parts 100, the sealing structure is provided on the end of the isolation baffle processing part 100 farthest from the valve 30 away from the valve 30, so as to use the sealing structure to block the first inner cavity 111 of the isolation baffle processing part 100 farthest from the valve 30 at the end of the first structural member 10 farthest from the valve 30. In addition, it is preferred that the vacuum pump assembly interface 101 is provided on the first housing 110 of at least one isolation baffle processing part 100 adjacent to the valve 30.

[0073] It should also be understood that the end of the first shell 110 of the isolation baffle processing part 100 adjacent to the valve 30 away from the valve 30, and the first end and the second end of the first shell 110 of the remaining isolation baffle processing parts 100 are all provided with a fourth docking piece 113. In this way, the first shells 110 of multiple isolation baffle processing parts 100 can be detachably connected through the fourth docking piece 113, and the end of the first shell 110 of the isolation baffle processing part 100 farthest from the valve 30 away from the valve 30 can also be connected to the sealing structure through the fourth docking piece 113.

[0074] Similarly, if Figure 5 As shown, the second structural member 20 may include a plurality of the source furnace storage parts 200. At this time, the second inner cavity 211 extends through the axial direction of the second shell 210, and the second shells 210 of the plurality of the source furnace storage parts 200 are coaxially arranged and detachably connected in sequence. And, the second shell 210 of a source furnace storage part 200 located at one axial end of the second structural member 20 is connected to the first structural member 10 through the valve 30. That is, the number of the source furnace storage parts 200 included in the maintenance device 1 is adjustable, so that the operator can adjust the number of the source furnace storage parts 200 according to actual needs to store multiple source furnaces 3 at one time.

[0075] It should be understood that when the second structural member 20 includes a plurality of the source furnace storage portions 200, the sealing structure is provided on the end of the source furnace storage portion 200 farthest from the valve 30 away from the valve 30, so as to utilize the sealing structure to seal the second inner cavity 211 of the source furnace storage portion 200 farthest from the valve 30 at the end of the second structural member 20 away from the valve 30.

[0076] It should also be understood that the end of the second shell 210 of the source furnace storage part 200 adjacent to the valve 30 away from the valve 30, and the third and fourth ends of the second shells 210 of the remaining source furnace storage parts 200 are all provided with a fifth docking piece 215. In this way, a plurality of source furnace storage parts 200 can be detachably connected through the fifth docking piece 215, and the end of the second shell 210 of the source furnace storage part 200 farthest from the valve 30 away from the valve 30 can also be connected to the sealing structure through the fifth docking piece 215.

[0077] Alternatively, if Figure 1 and Figure 4 As shown, the first inner cavity 110 of each of the isolation baffle processing parts 100 may include one or more second sub-chambers 1112. When the first inner cavity 110 includes a plurality of the second sub-chambers 1112, the plurality of the second sub-chambers 1112 are arranged at intervals along the axial direction of the first sub-chamber 1111. Accordingly, a plurality of the first docking members 112 are arranged on the first shell 110, preferably, the number of the first docking members 112 of the same isolation baffle processing part 100 is equal to the number of the second sub-chambers 1112, and the plurality of the first docking members 112 are arranged at intervals along the axial direction of the first sub-chamber 1111, so that the plurality of the first docking members 112 are arranged in a one-to-one correspondence with the plurality of the second sub-chambers 1112. And, the isolation baffle processing part 10 includes a plurality of the heaters 120 and a plurality of the collectors 130. Each of the heaters 120 is arranged in one of the second sub-chambers 1112, and is arranged around the axis of the first docking member 112 corresponding to the second sub-chamber 1112 in which it is located. Each collector 130 is disposed in one of the second sub-chambers 1112 and is located on a side of the heater 120 in the same second sub-chamber 1112 away from the first docking member 112. In this way, the same isolation baffle processing unit 100 can perform storage and cleaning operations on multiple isolation baffles 2 at the same time.

[0078] The calibers of the plurality of first docking members 112 of the same isolation baffle processing portion 100 may be the same, or may be at least partially different, which is not limited in the embodiment of the present invention.

[0079] The number of the second sub-chambers 1112 included in the first inner cavity 110 of different isolation baffle processing parts 100 may be the same or different.

[0080] Alternatively, if Figure 1 and Figure 5 As shown, each source furnace storage portion 200 includes one or more second docking members 212. When the source furnace storage portion 200 includes multiple second docking members 212, multiple second docking members 212 of the same source furnace storage portion 200 are arranged at intervals along the axial direction of the second shell 210. In this way, the same source furnace storage portion 200 can store multiple source furnaces 30 at the same time.

[0081] The diameters of the plurality of second docking members 212 of the same isolation baffle processing part 100 may be the same or at least partially different, which is not limited in the embodiment of the present invention. The number of the second docking members 212 included in different source furnace storage parts 200 may be the same or different.

[0082] Further, continue to refer to Figure 1 and Figure 5 , an observation hole 213 communicating with the second inner cavity 211 is also provided on the wall of the second shell 210, and the observation hole 213 is arranged opposite to the second docking piece 212. The source furnace storage part 200 also includes a window assembly 220, which is arranged at the observation hole 213, and the window assembly 220 includes a transparent observation sheet 221, and the observation sheet 221 covers the observation hole 213. Therefore, the operator can observe the situation in the second inner cavity 211 through the observation sheet 221, for example, observe the temperature field distribution in the second inner cavity 211, and for example, when the crucible 32 contains high-purity metal, observe whether the high-purity metal melts during the high-temperature degassing of the crucible 32, etc.

[0083] When the crucible 32 in the source furnace storage part 200 contains high-purity metal, the molten high-purity metal will be sprayed toward the observation piece 221 to form a coating on the observation piece 221, reducing the transparency of the observation piece 221, so that the operator can no longer observe the environment of the second inner cavity 211 through the observation piece 221. In view of this, the window assembly 220 also includes an observation piece baffle 222 and an adjustment member 223. The observation piece baffle 222 is arranged on a side of the observation piece 221 close to the second docking member 212. The adjustment member 223 is connected to the observation piece baffle 222 and partially extends to the outside of the second shell 210. The adjustment member 223 is configured to drive the observation piece baffle 222 to move under the action of an external force, so that the observation piece baffle 222 switches between the first state and the second state. When the observation piece baffle 222 is in the first state, the observation piece baffle 222 blocks the observation piece 221, so that the operator cannot observe the environment in the second inner cavity 211 through the observation piece 221, so that even if the high-purity metal in the crucible 32 of the source furnace 3 provided on the maintenance device 1 melts, the molten metal will not be sprayed onto the observation piece 221. When the observation piece baffle 222 is in the second state, the observation piece baffle 222 releases the shielding of the observation piece 221, so as to allow the operator to observe the environment of the second inner cavity 211 through the observation piece 221.

[0084] Optionally, the observation film baffle 222 is rotatably arranged, and the adjusting member 223 is used to drive the observation film baffle 222 to rotate under the action of an external force. Thus, when the observation film baffle 222 is in the first state, the observation film baffle 222 is parallel to the observation film 221, and when the observation film baffle 222 is in the second state, the observation film baffle 222 is perpendicular to the observation film 221.

[0085] Optionally, the second shell 210 is further provided with a third docking member 214, the third docking member 214 includes a third docking tube 2141 and a third docking member body 2142, the third docking tube 2141 is connected to the observation hole 213, and the lumen of the third docking tube 2141 is connected to the second inner cavity 211 through the observation hole 213. The third docking member body 2142 is arranged on the end of the third docking tube 2141 away from the second shell 210. The window assembly 220 also includes a third shell 224, the third shell 224 is provided with a third joint portion 225, and the third shell 224 is connected to the third docking member body 2142 through the third joint portion 225. The third shell 224 also has a third inner cavity (not marked in the figure) extending through the axial direction of the third docking tube 2141. The observation sheet 221 is connected to the third shell 224, and blocks the third inner cavity at the end of the third shell 224 away from the third docking member 214. The observation piece blocking piece 222 is disposed in the third inner cavity and is rotatably connected to the third housing 224. Here, the axis of the third butt joint pipe 2141 intersects or is not in the same plane as the axis of the second housing 210.

[0086] In the embodiment of the present invention, the first docking member body 1122, the second docking member body 2122, the third docking member body 2142, the first joining portion 23, the second joining portion 33, the third joining portion 225, the third joining portion 225, the fourth docking member 113, and the fifth docking member 215 can all be flanges.

[0087] Furthermore, an embodiment of the present invention also provides a maintenance method for a molecular beam epitaxy device, the maintenance method comprising the following steps:

[0088] The isolation baffle 2 removed from the molecular beam epitaxy device is arranged on the maintenance device 1. The specific arrangement method is: the baffle body 21 of each isolation baffle 2 passes through the first sub-chamber 1111 after passing through one of the docking pieces 112 and at least partially extends into the second sub-chamber 1112, and is located on the side of the heater 120 close to the axis of the corresponding first docking piece 112, and is located on the side of the collector 130 facing the first docking piece 112, and the first joint portion 23 is connected to the first docking piece 112.

[0089] The vacuum pump group is controlled to operate so as to evacuate the first inner cavity 111 until the first inner cavity 111 is maintained in a high vacuum state.

[0090] The heater 120 is operated to heat the isolation baffle 2 .

[0091] Finally, the isolation baffle 2 that has undergone the heating treatment is removed from the maintenance device 1 and reinstalled on the molecular beam epitaxy equipment.

[0092] The maintenance method may further include:

[0093] The source furnace 3 is arranged on the maintenance device 1 . Specifically, the crucible of the source furnace 3 is extended from the second docking piece 312 into the interior of the source furnace storage part 200 , and the second joint part 33 of the source furnace 3 is connected to the second docking piece 312 .

[0094] The valve 30 is opened to keep the second inner cavity 211 in a high vacuum state.

[0095] The heating wire of the source furnace 3 is operated to perform a degassing operation on the source furnace 3 .

[0096] Finally, the source furnace 3 that has undergone the degassing operation is installed in the molecular beam epitaxy equipment.

[0097] In some embodiments, the source furnace 3 is an old source furnace disassembled from the molecular beam epitaxy device. In other embodiments, the source furnace 3 is an old source furnace disassembled from the molecular beam epitaxy device, but the crucible therein is a new unused crucible. In still other embodiments, the source furnace 3 is a brand new unused source furnace 3.

[0098] Those skilled in the art know that the maintenance methods of the molecular beam epitaxy equipment include general maintenance and updating the source furnace. Among them, the general maintenance refers to the maintenance and cleaning of the various components in the molecular beam epitaxy equipment, and does not involve the replacement of components. The updating of the source furnace refers to the updating of at least part of the source furnace 3 in the molecular beam epitaxy equipment. The updating of the source furnace 3 includes replacing the source furnace 3 as a whole, and only replacing the crucible 32 of the source furnace 3 without replacing the furnace body 31. In the following text, the source furnace 3 that is a new source furnace as a whole and the source furnace 3 that is a new source furnace 3 only with the crucible 32 are both referred to as new source furnaces 3.

[0099] The general maintenance process is as follows, including:

[0100] First, under the premise that the molecular beam epitaxy equipment is in a maintenance state, the liquid nitrogen and water in the molecular beam epitaxy equipment are emptied according to a conventional method, and the source furnace 3 is kept at room temperature.

[0101] Next, the components are disassembled according to conventional methods. Specifically, the components that are not resistant to high temperatures in the molecular beam epitaxy equipment, the isolation baffle 2 and the source furnace 3 are disassembled. The components that are not resistant to high temperatures include isolation baffle controllers, various plastic pipes, magnetic components, etc.

[0102] Next, the isolation baffle 2 and the source furnace 3 are stored on the maintenance device 1 .

[0103] Next, under the premise that the first inner cavity 111 and the second inner cavity 311 of the maintenance device 1 are both in a high vacuum state, the isolation baffle 2 is cleaned by the maintenance device 1, and the heating wire of the source furnace 3 is operated to perform a degassing operation of the source furnace 3.

[0104] Next, the substrate heater and the liquid nitrogen cold shield of the molecular beam epitaxy equipment are lifted according to conventional methods, and the substrate heater and the liquid nitrogen cold shield are subjected to physical and chemical treatments.

[0105] Next, the isolation baffle plate 2 and the source furnace 3 are removed from the maintenance device 1 , and the isolation baffle plate 2 and the source furnace 3 are installed back into the molecular beam epitaxy equipment according to a conventional method.

[0106] Next, the molecular beam epitaxy device is baked according to a conventional method, and at the same time, the heating wire in the source furnace 3 is operated to perform a degassing operation of the source furnace 3 .

[0107] Among them, the step of "using the maintenance device 1 to clean the isolation baffle 2, and at the same time making the source furnace 3 perform a degassing operation on the maintenance device 1" can be performed simultaneously with the step of "lifting the substrate heater and the liquid nitrogen cold shield of the molecular beam epitaxy device, and performing physical and chemical treatment on the substrate heater and the liquid nitrogen cold shield". In addition, the components that are not resistant to high temperatures are installed after the molecular beam epitaxy device returns to room temperature.

[0108] During the maintenance process, the isolation baffle 2 is kept clean in the maintenance device 1, which effectively prevents the isolation baffle 2 from being polluted by air, so that when it is reinstalled into the molecular beam epitaxy device, no pollution source will be introduced, which is beneficial to improving the quality of the crystalline film grown in the molecular beam epitaxy device. At the same time, the source furnace 3 is kept in the maintenance device 1 and is in a vacuum environment equivalent to that inside the molecular beam epitaxy device in normal operation, which also reduces the pollution of the source furnace 3 by air. Therefore, when the source furnace 3 is installed back into the molecular beam epitaxy device, the degassing time can be shortened, which is beneficial to its rapid recovery to normal use.

[0109] The operation process of the source renewal furnace is roughly as follows, including:

[0110] First, the crucible 32 of the new source furnace 3 is visually inspected.

[0111] Next, the new source furnace 3 that passes the visual inspection is installed in the maintenance device 1 .

[0112] Next, under the premise that the second inner cavity 211 is in a high vacuum state, the heating wire of the new source furnace 3 is controlled to operate so as to perform a degassing operation on the new source furnace 3 .

[0113] Next, the new source furnace 3 is removed from the maintenance device 1 .

[0114] Next, high-purity nitrogen is introduced into the working chamber of the molecular beam epitaxy equipment, and high-purity metal is filled into the new crucible 32 , and the new source furnace 3 filled with high-purity metal is installed in the molecular beam epitaxy equipment.

[0115] Next, the molecular beam epitaxy equipment is baked according to a conventional method, and at the same time, the heating wires of all the source furnaces 3 of the molecular beam epitaxy equipment are heated up.

[0116] The operation of updating the source furnace 3 in the prior art is as follows:

[0117] First, the crucible 32 of the new source furnace 3 is visually inspected.

[0118] Next, high-purity nitrogen is introduced into the molecular beam epitaxy equipment, and the source furnace 3 that has passed the visual inspection is installed in the molecular beam epitaxy equipment.

[0119] Next, the molecular beam epitaxy equipment is evacuated.

[0120] Next, the molecular beam epitaxy equipment is baked.

[0121] Next, water and liquid nitrogen are introduced into the molecular beam epitaxy equipment, and the heating wire of the source furnace 3 is operated to perform a degassing operation on the source furnace 3 .

[0122] Next, the water and liquid nitrogen in the molecular beam epitaxy apparatus were evacuated.

[0123] Next, high-purity nitrogen is introduced into the molecular beam epitaxy equipment, and high-purity metal is filled into the crucible 32 of the new source furnace 3 .

[0124] Next, the molecular beam epitaxy equipment is evacuated.

[0125] Next, the molecular beam epitaxy equipment is baked.

[0126] By comparing the steps of using the maintenance device 1 to complete the update operation of the source furnace 3 of the molecular beam epitaxy device with the steps of the update operation of the source furnace 3 in the prior art, it can be found that after using the maintenance device 1 provided in the embodiment of the present invention, when updating the source furnace 3, only one baking operation needs to be performed on the molecular beam epitaxy device. Those skilled in the art know that the baking operation of the molecular beam epitaxy device takes up to 2 weeks. Therefore, the application of the maintenance device 1 effectively shortens the time for updating the crucible of the molecular beam epitaxy device, thereby shortening the idle time of the molecular beam epitaxy device, improving production efficiency, and reducing production costs.

[0127] Although the present invention is disclosed as above, it is not limited thereto. Those skilled in the art may make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

Claims

1. A maintenance device for a molecular beam epitaxy device, characterized in that: The invention comprises a first structural member, wherein the first structural member comprises at least one isolation baffle plate processing portion, and the isolation baffle plate processing portion comprises: A first shell has a first inner cavity, wherein the first inner cavity includes a first sub-chamber and a second sub-chamber that are connected to each other; a first docking piece connected to the first inner cavity is provided on a wall of the first shell, and the first docking piece is arranged opposite to the second sub-chamber; a heater, disposed in the second sub-chamber and arranged around the axis of the first docking piece; and The collector is arranged in the second sub-chamber and located at a side of the heater away from the first docking piece.

2. The maintenance device for molecular beam epitaxy equipment according to claim 1, characterized in that: The first inner cavity includes a plurality of second sub-chambers, and the plurality of second sub-chambers are arranged at intervals along the axial direction of the first sub-chamber; The isolation baffle processing part includes a plurality of the first docking parts, a plurality of the heaters, and a plurality of the collectors; the plurality of the first docking parts are arranged at intervals along the axial direction of the first sub-chamber and correspond one-to-one to the plurality of the second sub-chambers; one heater and one collector are arranged in each of the second sub-chambers.

3. The maintenance device for molecular beam epitaxy equipment according to claim 1, characterized in that: The first sub-chamber extends through the axial direction of the first shell; the first structural member includes a plurality of the isolation baffle processing parts, and the first shell of the plurality of the isolation baffle processing parts are coaxially arranged and detachably connected in sequence.

4. The maintenance device for molecular beam epitaxy equipment according to claim 1, characterized in that: The maintenance device also includes a second structural member and a valve; The second structural member includes at least one source furnace storage portion, and the source furnace storage portion includes a second shell; the second shell has a second inner cavity, and a second docking member communicating with the second inner cavity is provided on the wall of the second shell; The valve is disposed between the first structural member and the second structural member; The maintenance device is configured to control the connection and disconnection of the first inner cavity and the second inner cavity by opening and closing the valve.

5. The maintenance device for molecular beam epitaxy equipment according to claim 4, characterized in that: The wall of the second shell is also provided with an observation hole communicating with the second inner cavity, and the observation hole is arranged opposite to the second docking piece; The source furnace storage portion further includes a window assembly, which is disposed at the observation hole and includes a transparent observation sheet, and the observation sheet covers the observation hole.

6. The maintenance device for molecular beam epitaxy equipment according to claim 5, characterized in that: The window assembly also includes an observation film baffle and an adjusting member; the observation film baffle is arranged on a side of the observation film close to the second docking member; the adjusting member is connected to the observation film baffle and partially extends to the outside of the second shell, and the adjusting member is configured to drive the observation film baffle to move under the action of an external force so that the observation film baffle blocks the observation film or releases the blocking of the observation film.

7. The maintenance device for molecular beam epitaxy equipment according to claim 4, characterized in that: The source furnace retaining portion includes a plurality of the second abutting members, and the plurality of the second abutting members are arranged at intervals along the axial direction of the second shell.

8. The maintenance device for molecular beam epitaxy equipment according to claim 4, characterized in that: The second inner cavity extends through the axial direction of the second shell; the second structural member includes a plurality of the source furnace storage parts, and the second shells of the plurality of the source furnace storage parts are coaxially arranged and detachably connected in sequence.

9. A method for maintaining a molecular beam epitaxy device, performed based on the maintenance device according to claim 1, characterized in that: The maintenance method comprises: The isolation baffle removed from the molecular beam epitaxy device is arranged on the maintenance device; the isolation baffle is connected to the first docking piece, a baffle body of the isolation baffle passes through the first sub-chamber and at least partially extends to the second sub-chamber, and the baffle body is located on a side of the heater close to the axis of the first docking piece and on a side of the collector facing the first docking piece; Using a vacuum pump set to evacuate the first inner cavity so that the first inner cavity is maintained in a high vacuum state; operating the heater to heat the isolation baffle; and, The heat-treated isolation baffle is removed from the maintenance device, and the heat-treated isolation baffle is installed in the molecular beam epitaxy equipment.

10. The maintenance method of molecular beam epitaxy equipment according to claim 9, characterized in that: The maintenance device further includes a second structural member, the second structural member includes a source furnace storage portion and a valve, the source furnace storage portion includes a second shell, the second shell has a second inner cavity, and a second docking member communicating with the second inner cavity is provided on the wall of the second shell; the valve is arranged between the first structural member and the second structural member, and the maintenance device is configured to control the connection and disconnection of the first inner cavity and the second inner cavity by opening and closing the valve; The maintenance method further comprises: The source furnace is arranged on the maintenance device; the source furnace is connected to the second docking piece, and the crucible of the source furnace is at least partially located in the second inner cavity; Opening the valve to keep the second inner cavity in a high vacuum state; heating the source furnace to degas the source furnace; and, The degassed source furnace is removed from the maintenance equipment, and the degassed source furnace is installed in the molecular beam epitaxy equipment.

11. The maintenance method of molecular beam epitaxy equipment according to claim 10, characterized in that: The source furnace is a source furnace removed from the molecular beam epitaxy equipment; or, The source furnace is an unused source furnace; or, The source furnace comprises a furnace body and a crucible arranged in the furnace body, and the crucible is an unused crucible.

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