In-place rotating device for KDP (potassium dihydrogen phosphate) and DKDP (dipotassium dihydrogen phosphate) crystal growing furnace

Through the in-position rotation device of KDP and DKDP crystal growth furnace, the motor and reducer drive combined with mechanical sealing and cushioning rubber plum blossom coupling in the prior art, the problems of crystal growth instability and impurity generation in the prior art are solved, and high efficiency is achieved , uniform crystal growth and equipment reliability.

CN119145060APending Publication Date: 2024-12-17SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI +1
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Patent Information

Application Number
CN202411072086.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-08-06
Publication Date
2024-12-17

AI Technical Summary

Technical Problem

The in-position rotation mechanism of the existing KDP and DKDP crystal growth furnaces has problems of poor speed uniformity and short life, resulting in unstable crystal growth and impurity generation.

Method used

A in-position rotation device including a driving mechanism, a connecting mechanism and a crystal protection mechanism is designed, and is driven by a motor and a reducer, combining mechanical sealing and cushioning rubber plum blossom coupling to ensure smooth power transmission and high sealing, suitable for large Diameter KDP and DKDP crystal growth.

Benefits of technology

The uniform rotation of the crystal in the growth liquid is achieved, the crystal growth rate and yield are improved, the equipment life is extended, labor costs are reduced, and the quality and purity of the crystal are improved.

✦ Generated by Eureka AI based on patent content.

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Abstract

The invention discloses a rotating device for KDP and DKDP crystal growth. The device is composed of a servo motor speed reducer, a fixed connecting flange transition flange, a crystal frame and motor rotating connecting shaft, a crystal furnace upper end cover, a sealing structure, a sealing structure gland, a cushioning rubber plum coupling and the like. After a motor acceleration and speed reducer is connected through a fixing flange, a connecting shaft is installed in an inner hole of the speed reducer, sealing structures are installed at the upper end and the lower end of the connecting shaft, and a crystal furnace top cover is fixed to a transition flange through six M12 stainless steel screws. And when the crystal frame rotates forwards and backwards, the purpose of rapid growth of the crystal is achieved through other conditions. According to the method, efficient growth of the KDP and DKDP crystals can be realized, the labor cost is reduced, the error-tolerant rate of growth of the KDP and DKDP crystals is improved, and construction of a subsequent growth groove is further optimized.
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Description

Technical Field

[0001] The invention patent relates to the field of crystal growth technology, specifically an in-situ rotating device for KDP and DKDP crystal growth furnaces. Background Art

[0002] KDP and DKDP crystals are typical nonlinear optical materials with the advantages of large nonlinear optical coefficient, high damage threshold, wide transmission band and easy phase cutting.

[0003] The in-situ rotating mechanism of KDP and DKDP crystal growing furnaces adopts low negative pressure, end face sealing and graphite pressure of 2 mm to ensure the airtightness and life of the in-situ rotating mechanism. This mechanism can grow impurity-free crystals, ensuring the safe and fast growth process of the crystal without impurities. In the past, it was driven by synchronous toothed belts, which had poor speed uniformity and short life. Now it is driven by a reducer, which has more uniform speed. Summary of the invention

[0004] The present invention aims at the quality bottleneck of large-diameter KDP and DKDP crystal rapid growth technology, and based on the already carried out KDP and DKDP crystal rapid growth process optimization, the present invention solves the key problems of existing KDP and DKDP crystal self-developed equipment, avoiding the growth of impurity crystals, and stabilizing the growth rate. After the system is developed, high-quality KDP and DKDP crystals can be grown efficiently, labor costs can be reduced, the fault tolerance of KDP and DKDP crystal growth can be improved, and the construction of subsequent growth troughs can be further optimized.

[0005] The technical solution of the present invention is as follows:

[0006] An on-site rotating device for a KDP and DKDP crystal growing furnace is characterized in that it comprises a driving mechanism, a connecting mechanism and a crystal protecting mechanism; the connecting mechanism is used to connect the driving mechanism and the crystal protecting mechanism to realize on-site rotating driving of the crystal.

[0007] The driving mechanism is composed of a motor and a reducer, and is used to provide rotational power. The motor reduces the rotation speed and increases the torque through the reducer to meet the rotation requirements during the crystal growth process;

[0008] The connection mechanism includes a fixed connection flange, a transition flange, a connection shaft, an upper end cover of the crystal furnace, a sealing structure, a sealing structure gland and a shock-absorbing rubber plum blossom coupling; wherein the fixed connection flange is annular, and eight through holes of the same diameter are evenly distributed on the end face, which are used to connect the transition flange and the motor; eight threaded holes of the same diameter are evenly distributed on the end face of the transition flange, which are used to connect the fixed connection flange and the upper end cover of the crystal furnace, and the height of the connection shaft can be adjusted; the connection shaft is connected to the motor through the shock-absorbing rubber plum blossom coupling to achieve smooth transmission of power; the sealing structure is sleeved on the connection shaft and fixed at the center of the upper end cover of the crystal furnace, and the sealing structure gland is fixed on the upper end of the sealing structure to fix the sealing structure;

[0009] The crystal protection mechanism comprises an upper end cover of the crystal furnace, and a plurality of screws are evenly distributed on the outer end surface for installing the crystal frame.

[0010] Preferably, the sealing structure is sealed by low negative pressure and end face sealing.

[0011] Preferably, the sealing structure is composed of a core spacer and a centering screw, a graphite downward pressure preload spring, a graphite ring body, a sealing structure stop ring, an O-ring for sealing the bottom surface of the stop ring and the upper end surface of the crystal furnace, a centering spacer clamping screw, a mechanical seal outer shell and a mechanical seal outer protective cover to form a sealed cavity.

[0012] Preferably, the pressure of the sealed cavity is P = -0.1-0.6 MPa, the temperature of the sealed cavity is t = -40°C to 200°C, and the medium in the sealed cavity is acid, alkali, oil, or polymer suspension medium.

[0013] The upper end cover of the crystal furnace is made of high-quality metal material and has high sealing performance. 32 M16 screws are evenly distributed on the outer end of the end cover for installing the crystal rack;

[0014] Preferably, the flange is made of high-quality metal material, which has higher strength and deformation resistance.

[0015] Preferably, the connecting shaft is a rotating shaft connecting the crystal frame and the motor, and is made of high-quality 316L steel, which has a good glossiness of a cold-rolled product appearance. Due to the addition of Mo, it has excellent corrosion resistance, especially pitting resistance, high temperature strength, and excellent work hardening (weak magnetism after processing). It is non-magnetic in the solid solution state, and is relatively expensive compared to 304 stainless steel.

[0016] Compared with the prior art, the present invention has the following beneficial effects:

[0017] 1) The present invention can realize in-situ rotation drive of crystals in conjunction with a crystal growth furnace, and can optimize the position and angle of the crystal in the growth liquid, thereby improving the crystal growth conditions and promoting faster and more uniform growth of the crystal. Compared with traditional static growth, this dynamic growth method can significantly improve the growth rate and yield rate of crystals.

[0018] 2) The mechanical seals used in the connection mechanism (especially the combination of graphite seals and mechanical seal glands) and the high sealing performance design of the end cover of the crystal furnace ensure the stability and purity of the furnace environment. They can effectively prevent external impurities from entering or internal gas leakage, ensure the gas atmosphere and pressure conditions required during the crystal growth process, and thus improve the quality and purity of the crystal.

[0019] 3) The use of the shock-absorbing rubber plum coupling reduces the vibration and impact between the motor and the connecting shaft, and enhances the stability and reliability of the drive device. This not only extends the service life of the equipment, but also reduces errors and failures caused by vibration, and improves production efficiency and product quality.

[0020] 4) The transition flange design in the connection mechanism makes the height of the connection shaft adjustable, providing users with more installation and adjustment space to adapt to crystal growth furnaces of different specifications and models. At the same time, the upper end cover of the crystal furnace with high sealing performance is made of high-quality metal materials and is equipped with easy-to-remove screws, making equipment maintenance and replacement of parts more convenient.

[0021] 5) The present invention integrates the driving mechanism, the connecting mechanism and the crystal protection mechanism to form a new in-situ rotation driving device specifically for the growth of KDP and DKDP crystals. This innovative design not only solves the problems in traditional crystal growth technology, but also provides new solutions and ideas for the field of crystal growth, with unique technical advantages and market competitiveness. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 It is a schematic diagram of the in-situ rotating mechanism of the KDP and DKDP crystal growth furnaces of the present invention.

[0023] Figure 2 The sealing structure of the in-situ rotating mechanism of the KDP and DKDP crystal growth furnace of the present invention

[0024] Markings in the figure: 1. Servo motor speed reducer; 2. Fixed connection flange; 3. Transition connection flange; 4. Crystal frame and motor rotation connection shaft; 5. Crystal furnace upper end cover; 6. Sealing structure; 7. Machine seal cover; 8. Shock-absorbing rubber plum blossom coupling; 9. Centering spacer and centering screw; 10. Graphite down-pressure preload spring; 11. Graphite ring body; 12. Sealing structure stop ring; 13. O-ring for sealing the bottom surface of the stop ring and the upper end surface of the crystal furnace; 14. Centering spacer clamping screw; 15. Machine seal outer body; 16. Machine seal outer protective cover DETAILED DESCRIPTION

[0025] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the drawings in the embodiments of the present invention. The components of the embodiments of the present invention generally described and shown in the drawings herein can be arranged and designed in a variety of different configurations. Therefore, the following detailed description of the embodiments of the present invention provided in the drawings is not intended to limit the scope of the claimed invention, but only represents selected embodiments of the present invention.

[0026] like Figure 1 As shown, an in-situ rotation drive device for a KDP and DKDP crystal growth furnace is composed of a driving mechanism, a connecting mechanism and a crystal protection mechanism;

[0027] The connection mechanism includes a fixed connection flange 2, a transition flange 3, a crystal frame and a motor rotating connection shaft 4, a sealing structure 6, a mechanical seal pressure cover 7 and a shock-absorbing rubber plum blossom coupling 8; the fixed connection flange 2 is annular, and eight through holes of the same diameter are evenly distributed on the flange end face to connect the transition flange and the motor; the transition flange 3 end face is evenly distributed with eight threaded holes of the same size, which are connected to the fixed connection flange and the upper end cover of the crystal furnace, and the height of the connecting shaft 4 can be adjusted; the crystal frame and the motor rotating connection shaft 4 are connected to the motor using a shock-absorbing rubber plum blossom coupling; the lower end face stop ring of the sealing structure 6 is fixed to the center of the upper end cover 5 of the crystal furnace, and the upper end of the graphite seal is nested on the crystal frame and the motor rotating connection shaft 8; the sealing structure pressure cover 7 is installed at the lower end of the sealing structure to fix the mechanical seal;

[0028] The crystal protection mechanism includes an upper end cover 5 of the crystal furnace, which is integrally formed of high-quality metal material and has high sealing performance. 32 M16 screws are evenly distributed on the outer end of the end cover for installing the crystal frame.

[0029] Figure 2The sealing structure of the in-situ rotating mechanism of the KDP and DKDP crystal growing furnaces of the present invention is shown in the figure. The sealing structure 6 is formed by a core spacer and a centering screw 9, a graphite downward pressure preload spring 10, a graphite ring body 11, a sealing structure stop ring 12, an O-ring 13 for sealing the bottom surface of the stop ring and the upper end surface of the crystal furnace, a centering spacer pressing screw 14, a machine seal outer shell 15 and a machine seal outer protective cover 16 to form a sealed cavity. The connecting shaft 4 passes through the sealing structure 6, and the centering screw 9 is adjusted to make the sealing structure moving ring coaxial with the connecting shaft 4, and the O-ring 13 for sealing the bottom surface of the stop ring and the upper end surface of the crystal furnace is formed into a sealed connection. The centering spacer pressing screw 14 is adjusted to press the machine seal outer shell 15, thereby pressing the graphite downward pressure preload spring 10 to apply pressure to the graphite ring body 11, so that the graphite ring body 11 is in close contact with the sealing structure stop ring 12, and the sealing effect is achieved.

[0030] The pressure of the sealed cavity is P=-0.1-0.6MPa, the temperature of the sealed cavity is t=-40°C to 200°C, and the medium in the sealed cavity is acid, alkali, oil, or polymer suspension medium.

[0031] The working principle of the present invention is as follows:

[0032] The motor 1 and flange 2 fixed to each other form a power rotation output, the transition flange 3 is fixedly connected to the crystal furnace upper cover 5 through a threaded screw to form the upper cover as a whole and the crystal furnace integrated with each other, after the motor reducer 1 is connected through the fixed flange 2, the connecting shaft 4 is installed in the inner hole of the reducer, and the sealing structure 6 is installed at the upper and lower ends of the connecting shaft, and the crystal furnace top cover 5 is fixed on the transition flange 3 through M12 stainless steel screws. After the motor is powered on 1, the reducer is driven to rotate through the program, and the reducer drives the crystal rack and the motor rotation connecting shaft 4 to rotate, so that the crystal rack can realize forward and reverse rotation. When the crystal rack is reversed, the sealing structure plays a role in maintaining pressure in the furnace. When the crystal rack is reversed, other conditions are used to achieve the purpose of rapid crystal growth. The inner wall of the crystal cover is coated with Teflon.

[0033] Experiments have shown that the present invention can achieve efficient growth of KDP and DKDP crystals, improve the efficiency, quality, stability and reliability of crystal growth, and increase the fault tolerance of KDP and DKDP crystal growth, while reducing production costs and maintenance difficulty, and reducing labor costs, and has broad application prospects and market value.

Claims

1. An in-situ rotating device for KDP and DKDP crystal growth furnaces, It is characterized in that It comprises a driving mechanism, a connecting mechanism and a crystal protection mechanism; the connecting mechanism is used to connect the driving mechanism and the crystal protection mechanism to realize in-situ rotation driving of the crystal.

2. The in-situ rotating device for KDP and DKDP crystal growth furnaces according to claim 1, It is characterized in that The driving mechanism is composed of a motor and a reducer, and is used to provide rotational power. The motor reduces the rotation speed and increases the torque through the reducer to meet the rotation requirements during the crystal growth process; The connection mechanism comprises a fixed connection flange (2), a transition flange (3), a connection shaft (4), a crystal furnace upper end cover (5), a sealing structure (6), a sealing structure gland (7) and a shock-absorbing rubber plum blossom coupling (8); wherein the fixed connection flange (2) is annular, and eight through holes with the same diameter are evenly distributed on the end surface, which are used to connect the transition flange (3) and the motor; the transition flange (3) has eight threaded holes with the same diameter evenly distributed on the end surface, which are used to connect the fixed connection flange (2) and the crystal furnace upper end cover (5), and the height of the connection shaft (4) can be adjusted; the connection shaft (4) is connected to the motor through the shock-absorbing rubber plum blossom coupling (8) to achieve smooth power transmission; the sealing structure (6) is sleeved on the connection shaft (4) and fixed at the center of the crystal furnace upper end cover (5); the sealing structure gland (7) is fixed on the upper end of the sealing structure (6) and is used to fix the sealing structure (6); The crystal protection mechanism comprises an upper end cover (5) of the crystal furnace, with a plurality of screws evenly distributed on the outer end surface for mounting the crystal frame.

3. The in-situ rotating device for KDP and DKDP crystal growth furnaces according to claim 1, It is characterized in that The sealing structure (6) is sealed by a low negative pressure and end face sealing method.

4. The in-situ rotating device for KDP and DKDP crystal growth furnaces according to claim 1, It is characterized in that The sealing structure (6) is sealed to form a sealing cavity by a center spacer and a centering screw (9), a graphite downward pressure preload spring (10), a graphite ring body (11), a sealing structure stop ring (12), an O-ring (13) for sealing the upper end face of the crystal furnace, a centering spacer pressing screw (14), a machine seal outer shell (15) and a machine seal outer protective cover (16); the connecting shaft (4) passes through the sealing structure (6), and the centering screw (9) is adjusted to make the sealing structure stop ring (12) and the connecting shaft (4) coaxial, and the bottom surface of the stop ring and the O-ring (13) for sealing the upper end face of the crystal furnace form a sealing connection, and the centering spacer pressing screw (14) is adjusted to press down the machine seal outer shell (15), thereby pressing the graphite downward pressure preload spring (10) to apply pressure to the graphite ring body (11), so that the graphite ring body (11) and the sealing structure stop ring (12) are in close contact, thereby achieving a sealing effect.

5. The in-situ rotating device for KDP and DKDP crystal growth furnaces according to claim 4, It is characterized in that The pressure of the sealed cavity is P=-0.1-0.6MPa, the temperature of the sealed cavity is t=-40°C to 200°C, and the medium in the sealed cavity is acid, alkali, oil, or polymer suspension medium.

6. The in-situ rotating device for KDP and DKDP crystal growth furnaces according to claim 1, It is characterized in that The upper end cover of the crystal furnace is formed in one piece by using metal material.