Wafer temperature measuring device based on stack type thermocouple

Abstract

The invention provides a wafer temperature measuring device based on stacked thermocouples, and relates to the technical field of semiconductor manufacturing. The device comprises a temperature measuring wafer, one or more stack type thermocouple temperature measuring sensors and conventional thermocouple temperature measuring sensors which are arranged on the outer surface of the temperature measuring wafer through temperature measuring points, and transmission wires connected with the stack type thermocouple temperature measuring sensors and the conventional thermocouple temperature measuring sensors, the vacuum penetrating belt is located on the outer side of the transmission wire, the temperature measurement wafer data acquisition instrument is connected with the transmission wire, and the signal receiving device and the upper computer are remotely connected with the temperature measurement wafer data acquisition instrument. According to the invention, the problem of low temperature measurement precision of the thermocouple wafer is solved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a wafer temperature measurement device based on stacked thermocouples. Background Art

[0002] In the field of semiconductor manufacturing, wafers often need to be heated to above 1000°C, so it is very necessary to monitor the temperature of the wafer surface. In addition, accurate measurement of wafer surface temperature helps optimize process manufacturing and promote the development of the semiconductor manufacturing industry. Commonly used wafer temperature measurement methods include resistance temperature measurement, thermocouple temperature measurement, and fluorescent fiber temperature measurement. Among them, resistance temperature measurement is more difficult to measure at high temperatures and has a poor reproducibility level; fluorescent fiber temperature measurement has higher accuracy below 200°C, but at higher temperatures, it is difficult to perform contact measurement due to factors such as materials, and the non-contact measurement level is relatively poor.

[0003] The thermocouples used in traditional thermocouple wafer temperature measurement technology are mainly thermocouples, and the temperature measurement uncertainty is between ±1.5℃ and 2.5℃, which is relatively high. In addition, the thermocouple wire used in traditional thermocouples only contains a pair of conductors or semiconductors, and the signal strength of the thermoelectric potential generated during the temperature measurement process is limited, resulting in limited measurement accuracy. During the measurement process, the temperature of the cold end of the thermocouple is uneven, resulting in a difference between the actual measurement value and the true temperature value. Summary of the invention

[0004] In view of the above-mentioned deficiencies in the prior art, the present invention provides a wafer temperature measurement device based on a stacked thermocouple, which solves the problem of low temperature measurement accuracy of the thermocouple wafer.

[0005] In order to achieve the above-mentioned purpose of the invention, the technical solution adopted by the present invention is: a wafer temperature measuring device based on stacked thermocouples, including: a temperature measuring wafer, one or more stacked thermocouple temperature measuring sensors and conventional thermocouple temperature measuring sensors arranged on the outer surface of the temperature measuring wafer through temperature measuring points, a transmission wire connected to the stacked thermocouple temperature measuring sensor and the conventional thermocouple temperature measuring sensor, a vacuum penetration belt located outside the transmission wire, a temperature measuring wafer data acquisition instrument connected to the transmission wire, and a signal receiving device and a host computer remotely connected to the temperature measuring wafer data acquisition instrument.

[0006] The beneficial effects of the present invention are as follows: the present invention forms a stacked structure by connecting thermocouples in series, which can amplify the temperature signal, thereby greatly improving the temperature measurement accuracy; by realizing temperature compensation or temperature control on the cold end of the thermocouple, the constant temperature of the cold end is maintained, thereby greatly improving the temperature measurement accuracy; the stacked thermocouples are arranged at key points on the surface of the wafer, which can meet the actual temperature measurement needs on site, ensure the temperature measurement accuracy and reduce costs.

[0007] Furthermore, the temperature measurement points of the temperature measurement wafer are evenly distributed in a ring shape; wherein the temperature measurement points include conventional temperature measurement points and key temperature measurement points, and the conventional temperature measurement points and the key temperature measurement points are evenly distributed or regionally distributed.

[0008] Stacked thermocouples are arranged at key points on the wafer surface, and the temperature measurement points on the wafer surface are evenly distributed in a ring shape, which can meet the actual temperature measurement needs on site, ensure temperature measurement accuracy, and reduce costs.

[0009] Furthermore, the stacked thermocouple temperature measuring sensor is bonded to the temperature measuring wafer based on the key temperature measuring points, and the conventional thermocouple temperature measuring sensor is bonded to the temperature measuring wafer based on the conventional temperature measuring points.

[0010] Based on the Bezek effect between conductors or semiconductors, the temperature signal on the wafer surface is converted into a thermoelectric potential signal at both ends of the circuit structure during the temperature measurement process. Based on the basic properties of the series circuit, the thermoelectric potential signal is effectively amplified to improve the detection accuracy.

[0011] Furthermore, the stacked thermocouple temperature sensor comprises a first temperature measuring thermocouple wire and a second temperature measuring thermocouple wire, and the first temperature measuring thermocouple wire and the second temperature measuring thermocouple wire are connected in series.

[0012] Connecting the temperature measuring thermocouple wire based on the basic properties of the series circuit can effectively amplify the thermoelectromotive force signal on the wafer surface and greatly improve the temperature measurement accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] This specification will be further described in the form of exemplary embodiments, which will be described in detail by the accompanying drawings. These embodiments are not restrictive, and in these embodiments, the same number represents the same structure, wherein: Figure 1 is an exemplary schematic diagram of a wafer temperature measurement device based on a stacked thermocouple according to some embodiments of this specification; FIG. 2 ( a ) is an exemplary schematic diagram of uniformly distributed temperature measurement points on the surface of a temperature measurement wafer according to some embodiments of this specification; FIG2( b ) is an exemplary schematic diagram of the regional distribution of temperature measurement points on the surface of a temperature-measured wafer according to some embodiments of this specification; Figure 3 is an exemplary schematic diagram of a stacked temperature measuring thermocouple sensor according to some embodiments of this specification; Among them: 1. Temperature measuring wafer; 21. First temperature measuring thermocouple wire; 22. Second temperature measuring thermocouple wire; 2. Stacked thermocouple temperature measuring sensor; 3. Conventional thermocouple temperature measuring sensor; 4. Transmission wire; 5. Vacuum penetration belt; 6. Temperature measuring wafer data acquisition instrument; 7. Signal receiving device; 8. Host computer. DETAILED DESCRIPTION

[0014] The specific implementation modes of the present invention are described below so that those skilled in the art can understand the present invention. However, it should be clear that the present invention is not limited to the scope of the specific implementation modes. For those of ordinary skill in the art, as long as various changes are within the spirit and scope of the present invention as defined and determined by the attached claims, these changes are obvious, and all inventions and creations utilizing the concept of the present invention are protected.

[0015] Example Figure 1 It is an exemplary schematic diagram of a wafer temperature measurement device based on stacked thermocouples according to some embodiments of the present specification.

[0016] In some embodiments, Figure 1 As shown, a wafer temperature measuring device based on stacked thermocouples may include a temperature measuring wafer 1, one or more stacked thermocouple temperature measuring sensors 2 and conventional thermocouple temperature measuring sensors 3 arranged on the outer surface of the temperature measuring wafer 1 through temperature measuring points, a transmission wire 4 connected to the stacked thermocouple temperature measuring sensors 2 and the conventional thermocouple temperature measuring sensors 3, a vacuum penetration belt 5 located outside the transmission wire 4, a temperature measuring wafer data acquisition instrument 6 connected to the transmission wire 4, a signal receiving device 7 remotely connected to the temperature measuring wafer data acquisition instrument 6, and a host computer 8.

[0017] In some embodiments, the material of the transmission wire 4 may preferably be K-type, S-type, R-type or other thermocouple wires.

[0018] By selecting the material of the dual wire, it can better adapt to the measurement temperature range and measurement accuracy requirements.

[0019] In some embodiments, the material of the vacuum penetration belt 5 may preferably be composed of an alumina fiber sleeve.

[0020] By selecting this material, the high temperature resistance, corrosion resistance and thermal shock resistance of the vacuum penetration belt 5 can be improved, thereby ensuring the stability of the temperature measurement result to the greatest extent.

[0021] In some embodiments, as shown in FIG. 2 (a) and FIG. 2 (b), the temperature measurement points of the temperature measurement wafer 1 are evenly distributed in a ring shape of (8, 8, 1); wherein the temperature measurement points include conventional temperature measurement points and key temperature measurement points, and the conventional temperature measurement points and the key temperature measurement points are evenly distributed or regionally distributed.

[0022] In some embodiments of the present specification, stacked K-type thermocouples are arranged at key points on the wafer surface, and the temperature measurement points on the wafer surface are evenly distributed in a ring shape of (8, 8, 1), which can meet actual temperature measurement requirements on site, ensure temperature measurement accuracy, and reduce costs.

[0023] In some embodiments, conventional temperature measurement points and key temperature measurement points can be set according to on-site temperature measurement requirements.

[0024] In some embodiments of the present specification, the temperature measurement points are set according to the on-site temperature measurement requirements so that the temperature measurement results can better match the actual measurement requirements.

[0025] In some embodiments, the distribution of temperature measurement points can be selected according to actual conditions. For example, when it is necessary to better reflect the actual temperature distribution on the wafer surface, a uniform distribution can be used, as shown in FIG2 (a), and the key temperature measurement points of the outer ring and the inner ring are staggered according to the uniform distribution; when it is necessary to measure the temperature in the key temperature measurement area in detail, a regional distribution can be used, as shown in FIG2 (b), and all the temperature measurement points in the key temperature measurement area are set as key temperature measurement points.

[0026] In some embodiments of the present specification, the measurement points are evenly distributed on the entire wafer surface, which can effectively ensure the flatness of the wafer surface and improve the accuracy of temperature measurement.

[0027] In some embodiments, a wafer temperature measurement device based on a stacked thermocouple can perform thermocouple cold end potential correction and compensation based on temperature measurement data of key temperature measurement points on the wafer surface.

[0028] In some embodiments of the present specification, based on the measured temperature of key points of the temperature measuring wafer, temperature compensation or temperature control is performed on the cold end of the thermocouple to keep the cold end at a constant temperature. In this way, the temperature measurement accuracy can be improved.

[0029] In some embodiments, the stacked thermocouple temperature sensor 2 is bonded to the temperature measuring wafer 1 based on key temperature measuring points, and the conventional thermocouple temperature sensor 3 is bonded to the temperature measuring wafer 1 based on conventional temperature measuring points.

[0030] In some embodiments, the stacked thermocouple temperature sensor 2 and the conventional thermocouple temperature sensor 3 form a wafer temperature measurement system for acquiring temperature signals and converting the temperature signals into thermoelectromotive force signals using the Bezek effect of the thermocouples.

[0031] In some embodiments of the present specification, based on the Bezek effect between conductors or semiconductors, the temperature signal on the surface of the wafer is converted into a thermoelectric potential signal at both ends of the circuit structure during the temperature measurement process. Based on the basic properties of the series circuit, the thermoelectric potential signal is effectively amplified to improve the detection accuracy.

[0032] In some embodiments, the wafer temperature measurement system can use the transmission wire 4 to transmit the thermoelectromotive force signal to the temperature measurement wafer data acquisition instrument 6 .

[0033] In some embodiments, the vacuum penetration belt 5 may be located outside the transmission conductor 4 to protect the transmission conductor 4 , and the transmission conductor 4 and the vacuum penetration belt 5 constitute a temperature measurement signal transmission system.

[0034] In some embodiments of the present specification, the vacuum penetration belt 5 has the characteristics of high temperature resistance and corrosion resistance. The vacuum penetration belt 5 is used to protect the transmission wire 4 to ensure that the temperature measuring wafer can work in a high temperature environment.

[0035] In some embodiments, the temperature measuring wafer data acquisition instrument 6 receives the thermoelectromotive force signal of the temperature measuring signal transmission system to obtain the wafer surface temperature information; transmits the wafer surface temperature information to the receiver 7 via wireless signal transmission, and the receiver transmits the wafer surface temperature information to the host computer 8 through signal conversion.

[0036] In some embodiments, Figure 3 As shown, the stacked thermocouple temperature measuring sensor 2 includes a first temperature measuring thermocouple wire 21 and a second temperature measuring thermocouple wire 22 , and the first temperature measuring thermocouple wire 21 and the second temperature measuring thermocouple wire 22 are connected in series.

[0037] In some embodiments of the present specification, connecting temperature measuring thermocouple wires based on the basic properties of series circuits can effectively amplify the thermoelectromotive force signal on the wafer surface and greatly improve the temperature measurement accuracy.

[0038] In some embodiments, the wafer temperature measurement device based on the stacked thermocouple can use the temperature measurement software to detect the wafer surface temperature in real time, and record it according to the temperature-time curve and the wafer surface temperature distribution diagram. For example, the wafer temperature measurement device based on the stacked thermocouple can place the temperature measurement wafer in the test environment, set the corresponding serial port, baud rate and open the serial port in the temperature measurement software, use the temperature measurement wafer data acquisition instrument 6 to collect the wafer surface temperature information and transmit it to the host computer 8, use the wafer surface temperature information displayed in the host computer 8 to control and correct the cold end potential, and use the wafer surface temperature information to draw a chart.

[0039] The present invention forms a stacked structure by connecting thermocouples in series, which can amplify the temperature signal, thereby greatly improving the temperature measurement accuracy; by realizing temperature compensation or temperature control on the cold end of the thermocouple, the constant temperature of the cold end is maintained, thereby greatly improving the temperature measurement accuracy; the stacked thermocouples are arranged at key points on the surface of the wafer, which can meet the actual temperature measurement needs on site, ensure the temperature measurement accuracy and reduce costs.

Claims

1. A wafer temperature measurement device based on stacked thermocouples, characterized in that: include: A temperature measuring wafer (1), one or more stacked thermocouple temperature measuring sensors (2) and conventional thermocouple temperature measuring sensors (3) arranged on the outer surface of the temperature measuring wafer (1) via temperature measuring points, a transmission wire (4) connected to the stacked thermocouple temperature measuring sensors (2) and the conventional thermocouple temperature measuring sensors (3), a vacuum penetration belt (5) located outside the transmission wire (4), a temperature measuring wafer data acquisition instrument (6) connected to the transmission wire (4), a signal receiving device (7) remotely connected to the temperature measuring wafer data acquisition instrument (6), and a host computer (8).

2. The wafer temperature measurement device based on stacked thermocouple according to claim 1, characterized in that: The temperature measurement points of the temperature measurement wafer (1) are evenly distributed in a ring shape; wherein the temperature measurement points include conventional temperature measurement points and key temperature measurement points, and the conventional temperature measurement points and the key temperature measurement points are evenly distributed or regionally distributed.

3. The wafer temperature measurement device based on stacked thermocouple according to claim 2, characterized in that: The stacked thermocouple temperature sensor (2) is bonded to the temperature measuring wafer (1) based on the key temperature measuring points, and the conventional thermocouple temperature sensor (3) is bonded to the temperature measuring wafer (1) based on the conventional temperature measuring points.

4. The wafer temperature measurement device based on stacked thermocouple according to claim 3, characterized in that: The stacked thermocouple temperature sensor (2) comprises a first temperature measuring thermocouple wire (21) and a second temperature measuring thermocouple wire (22), wherein the first temperature measuring thermocouple wire (21) and the second temperature measuring thermocouple wire (22) are connected in series.

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