Donor and method for transferring light emitting diode using same

Abstract

The invention relates to a donor and a method for transferring a light emitting diode using the same. According to an aspect of the present disclosure, a donor may include: a base substrate; a resin layer disposed on the base substrate and including a plurality of chip bumps; and an airbag layer provided between the base substrate and the resin layer and configured to be expandable by air injected from the outside. Accordingly, the height of the plurality of chip bumps is adjusted using the airbag layer so that gaps between the plurality of chip bumps and the plurality of light emitting diodes may be removed during a transfer process.

Description

Technical Field

[0001] The present disclosure relates to a donor and a method for transferring a light emitting diode using the same, and more particularly, for example but not limited to, to a donor capable of reducing non-contact defects of a light emitting diode and a method for transferring a light emitting diode using the same. Background Art

[0002] Among display devices for computer monitors, televisions, or mobile phones, there are organic light emitting display devices (OLEDs) that are self-luminous devices, plasma display devices (PDPs), field emission display devices (FEDs), micro LED (micro light emitting diode) display devices, and liquid crystal display devices (LCDs) that require a separate light source (e.g., a backlight unit). The application range of display devices is diversified to personal digital assistants and computer monitors and televisions, and display devices with a large display area and reduced volume and weight are being studied.

[0003] In addition, recently, a display device including a light emitting diode (LED) is receiving attention as a next generation display device. Since LED is formed of an inorganic material rather than an organic material, it has excellent reliability, making its life longer than that of a liquid crystal display device or an organic light emitting display device. In addition, LED has a fast lighting speed, excellent luminous efficiency, and strong impact resistance, making it excellent in stability and able to display images with high brightness. A display device including an LED is manufactured by transferring the LED using a donor.

[0004] The description provided in this Description of the Related Art section should not be assumed to be prior art merely because it is mentioned in or associated with the Description of the Related Art section. The Description of the Related Art section may include information that describes one or more aspects of the subject technology. Summary of the invention

[0005] An object to be achieved by the present disclosure is to provide a donor capable of reducing non-contact defects of a light emitting diode and a method of transferring a light emitting diode using the same.

[0006] Another object to be achieved by the present disclosure is to provide a donor that compensates for thickness irregularities of a resin layer and a plurality of chip bumps, and a light emitting diode transfer method using the same.

[0007] Another object to be achieved by the present disclosure is to provide a donor for easily injecting air directly from a head into an airbag layer and a method of transferring a light emitting diode using the same.

[0008] Still another object to be achieved by the present disclosure is to provide a donor which selectively injects air into each of a plurality of regions of an airbag layer to improve process efficiency, and a light emitting diode transfer method using the same.

[0009] The objects of the present disclosure are not limited to the above-mentioned objects, and other objects not mentioned above can be clearly understood by those skilled in the art from the following description.

[0010] According to one aspect of the present disclosure, a donor may include: a base substrate; a resin layer disposed on the base substrate and including a plurality of chip bumps; and an airbag layer disposed between the base substrate and the resin layer and configured to be expandable by air injected from the outside. Thus, the height of the plurality of chip bumps is adjusted using the airbag layer, so that the gaps between the plurality of chip bumps and the plurality of light-emitting diodes can be removed during the transfer process.

[0011] According to one aspect of the present disclosure, a method for transferring a light emitting diode using a donor may include: loading a temporary substrate having a plurality of light emitting diodes disposed on a top surface onto a stage, and fixing a donor to a head; engaging the temporary substrate and the donor by moving the head to the stage; injecting air into an airbag layer of the donor; and moving the head to separate the temporary substrate and the donor. Thus, air is injected into the airbag layer to allow the light emitting diode to contact the donor and minimize or at least reduce non-transfer defects of the light emitting diode.

[0012] Additional details of example implementations are included in the detailed description and accompanying drawings.

[0013] According to the present disclosure, in a transfer process of a plurality of light emitting diodes using a donor, non-contact defects of the donor and the plurality of light emitting diodes are minimized or at least reduced to optimize the transfer process.

[0014] According to the present disclosure, an air bag layer is formed in a donor to compensate for thickness irregularities of a resin layer and a plurality of chip bumps to minimize or at least reduce non-transfer defects of a plurality of light emitting diodes.

[0015] According to the present disclosure, holes are formed in a base substrate to directly inject air into one surface of an airbag layer, thereby reducing the thickness of a donor and simplifying the air injection process.

[0016] According to the present disclosure, air is selectively injected into multiple areas of the airbag layer according to circumstances to improve the transfer efficiency of the light emitting diode.

[0017] The effects according to the present disclosure are not limited to the contents of the above examples, and more various effects are included in this specification.

[0018] Additional features and aspects will be explained in part in the following description, and in part will be obvious from the description, or can be learned by the practice of the inventive concept provided herein. Other features and aspects of the inventive concept will be realized and obtained by the structures pointed out in the written description or the structures derivable therefrom, as well as the attached claims and drawings.

[0019] It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the inventive concepts as claimed. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The accompanying drawings, which provide a further understanding of the disclosure and can be incorporated in and constitute a part of this disclosure, illustrate embodiments of the disclosure and together with the description serve to explain various principles of the disclosure.

[0021] The above and other aspects, features and other advantages of the present disclosure will be more clearly understood from the following detailed description in conjunction with the accompanying drawings, in which:

[0022] Figure 1 is a plan view of a donor according to an example embodiment of the present disclosure;

[0023] Figure 2 is a cross-sectional view of a donor according to an example embodiment of the present disclosure;

[0024] Figure 3 is a plan view of an airbag layer of a donor according to an example embodiment of the present disclosure;

[0025] Figure 4A and Figure 4B is a flow chart for explaining a transfer method of a light emitting diode using a donor according to an example embodiment of the present disclosure;

[0026] Figure 4C and Figure 4D is an enlarged cross-sectional view for explaining a process of improving a non-contact defect using an air bag layer during a transfer process of a light emitting diode using a donor according to an exemplary embodiment of the present disclosure;

[0027] Figure 5 is a cross-sectional view of a donor according to another example embodiment of the present disclosure;

[0028] Figure 6 is a cross-sectional view of a donor and a head according to another example embodiment of the present disclosure;

[0029] Figure 7 is a plan view of an airbag layer of a donor according to yet another example embodiment of the present disclosure;

[0030] Figure 8is a plan view of an airbag layer of a donor according to yet another example embodiment of the present disclosure;

[0031] Fig.9A is an image for checking a result of a transfer process using a donor according to a comparative embodiment; and

[0032] Fig. 9B are images for checking the results of a transfer process using a donor according to an example embodiment of the present disclosure.

[0033] Throughout the drawings and detailed description, unless otherwise described, the same drawing reference numerals should be understood to refer to the same elements, features, and structures. The relative sizes and depictions of these elements may be exaggerated for clarity, illustration, and convenience. DETAILED DESCRIPTION

[0034] Reference will now be made in detail to embodiments of the present disclosure, examples of which may be illustrated in the accompanying drawings. In the following description, when a detailed description of a well-known function or configuration associated with this document is determined to be unnecessary to obscure the gist of the inventive concept, its detailed description will be omitted or may be briefly provided. The described progression of processing steps and / or operations is an example; however, the order of steps and / or operations is not limited to the order set forth herein, and may be changed as known in the art, except for steps and / or operations that must occur in a particular order. Similar reference numerals designate similar elements throughout the text. The names of the corresponding elements used in the following description may be selected solely for the convenience of writing the specification, and may therefore be different from the names used in the actual product.

[0035] The advantages and features of the present disclosure and methods for achieving these advantages and features will become clear by referring to the example embodiments described in detail below in conjunction with the accompanying drawings. However, the present disclosure is not limited to the example embodiments disclosed herein, but will be implemented in various forms. The example embodiments are provided only by way of example so that those skilled in the art can fully understand the disclosure of the present disclosure and the scope of the present disclosure.

[0036] The shapes, sizes, areas, ratios, angles, quantities, etc. illustrated in the drawings for describing the example embodiments of the present disclosure are merely examples, and the present disclosure is not limited thereto. Throughout the specification, similar reference numerals generally represent similar elements. In addition, in the following description of the present disclosure, a detailed explanation of known related technologies may be omitted or may be briefly provided to avoid unnecessarily obscuring the subject matter of the present disclosure. Terms such as "comprising", "having", "constituting", "made of", "formed of", "including", and "consisting of" used herein are generally intended to allow the addition of other components, unless these terms are used together with the term "only". Unless otherwise expressly stated, any reference to the singular may include the plural.

[0037] Any implementation described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other implementations.

[0038] Even without an explicit description of the error or tolerance range, the components are interpreted as including the usual error or tolerance range.

[0039] When terms such as "on," "over," "above," "below," "beside," "below," "adjacent," "close," "adjacent to," and "next to" are used to describe a positional relationship between two components, one or more components may be located between the two components unless the term is used with the terms "immediately," "closely," or "directly." It will be understood that spatially relative terms may encompass different orientations of elements in use or operation in addition to the orientation depicted in the drawings. For example, if the elements in the drawings are flipped, elements described as being "below" or "below" other elements or features would then be oriented to be "above" the other elements or features. Thus, the exemplary term "below" may encompass both "above" and "below" orientations. Similarly, the exemplary terms "above" or "on" may encompass both "above" and "below" orientations.

[0040] When time-relative terms such as "after," "subsequently," "following," "next," and "before" are used to define a temporal relationship, non-sequential situations may be included unless more restrictive terms such as "just," "immediately," or "directly" are used.

[0041] When an element or layer is referred to as being “on” another element or layer, the other layer or element may be directly on the other element or interposed therebetween.

[0042] Although the terms "first", "second", "A", "B", "(a)", "(b)", etc. are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from other components. Therefore, the first component to be mentioned below may be the second component in the technical concept of the present disclosure.

[0043] Like reference numerals generally refer to like elements throughout the specification.

[0044] The size and thickness of each component illustrated in the drawings are illustrated for convenience of description, and the present disclosure is not limited to the illustrated sizes and thicknesses of the components.

[0045] The features in various embodiments of the present disclosure may be coupled or combined with each other partially or as a whole, and may be technically interlocked and operated in various ways, and the embodiments may be implemented independently or in association with each other.

[0046] Unless otherwise defined, the terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which the example embodiments belong. It will also be understood that terms (such as those defined in commonly used dictionaries) should be interpreted as having, for example, a meaning consistent with their meaning in the context of the relevant art, and should not be interpreted in an idealized or overly formal sense unless expressly defined as such herein. For example, the term "component" or "unit" may apply, for example, to a separate circuit or structure, an integrated circuit, a computing block of a circuit device, or any structure configured to perform the described function, as will be understood by one of ordinary skill in the art.

[0047] When an element is “connected,” “coupled,” or “adhered” to another element or layer, the element or layer may be not only directly connected or adhered to the other element or layer but also indirectly connected or adhered to the other element or layer with one or more intervening elements or layers disposed or interposed therebetween, unless otherwise specified.

[0048] The expression of a first element, a second element "and / or" a third element should be understood as one of the first element, the second element, and the third element, or any or all combinations of the first element, the second element, and the third element. By way of example, A, B, and / or C may refer to only A; only B; only C; any one or some combination of A, B, and C; or all of A, B, and C.

[0049] The term "at least one" should be understood to include any and all combinations of one or more associated listed items. For example, the meaning of "at least one of the first item, the second item, and the third item" covers the combination of all three listed items, the combination of any two of the three elements, and each individual element (the first element, the second element, and the third element).

[0050] Hereinafter, various exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. For ease of description, the scale of each element shown in the accompanying drawings is different from the actual scale, and is therefore not limited to the scale shown in the drawings.

[0051] Hereinafter, donors and transfer methods using the same according to various exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.All components of each donor according to all embodiments of the present disclosure are operatively connected and configured.

[0052] Figure 1 is a plan view of a donor according to an example embodiment of the present disclosure. Figure 2 is a cross-sectional view of a donor according to an example embodiment of the present disclosure. Figure 3 is a plan view of an airbag layer of a donor according to an example embodiment of the present disclosure. Figure 3 , for convenience of description, the punching plate 122 and the plurality of holes 122a provided in the buffer unit 121 are illustrated by solid lines.

[0053] Reference Figure 1 and Figure 2 , the donor 100 is a member for transferring a plurality of light emitting diodes LED to a target substrate. The donor 100 can transfer a plurality of light emitting diodes LED disposed on a wafer or a temporary substrate TS to a target substrate such as a substrate of a display device. For example, the donor 100 is bonded to a wafer or a temporary substrate TS on which a plurality of light emitting diodes LED are disposed to transfer the plurality of light emitting diodes LED to the donor 100. In addition, the donor 100 to which a plurality of light emitting diodes LED are temporarily attached is bonded to a target substrate to transfer the plurality of light emitting diodes LED to the target substrate. Therefore, the donor 100 is used to transfer a plurality of light emitting diodes LED from the temporary substrate TS to a target substrate to form an electronic product such as a display device.

[0054] At this time, the light emitting diode LED may be an LED or a micro-LED.

[0055] The donor 100 includes a base substrate 110 , a plurality of adhesive layers 140 , an airbag layer 120 , a resin layer 130 , a plurality of chip bumps 131 , and a plurality of dummy bumps 132 .

[0056] The base substrate 110 is a configuration for supporting various components included in the donor 100. The base substrate 110 is formed of a material at least harder than the resin layer 130 to minimize or at least reduce the warping of the resin layer 130. The base substrate 110 supports the resin layer 130, which is relatively more flexible than the base substrate 110, a plurality of chip bumps 131 and a plurality of dummy bumps 132 arranged on the resin layer 130, so as to minimize or at least reduce its deformation during the transfer process. The base substrate 110 is formed to have the largest thickness among the configurations of the donor 100 to support other configurations of the donor 100. For example, the base substrate 110 is formed to have a thickness of about 500 μm. In addition, the base substrate 110 has rigidity and can be formed of a transparent material. For example, the base substrate 110 is formed of glass or a plastic material such as polycarbonate (PC) or polyethylene terephthalate (PET), but is not limited thereto.

[0057] The resin layer 130 is disposed on the airbag layer 120. During the transfer process, the resin layer 130 can support a plurality of chip bumps 131 to which a plurality of light emitting diodes LED are attached. The resin layer 130 is formed of a polymer resin having viscoelasticity, for example, the resin layer 130 is composed of polydimethylsiloxane (PDMS), polyurethane acrylate (PUA), polyethylene glycol (PEG), polymethyl methacrylate (PMMA), polystyrene (PS), epoxy resin, polyurethane resin or acrylic resin. However, it is not limited thereto.

[0058] The resin layer 130 includes an active area AA and an inactive area IA. The active area AA is an area where a plurality of chip bumps 131 to be attached with a plurality of light emitting diodes LED are disposed, and may be disposed to correspond to the wafer 200 or the temporary substrate TS or to a target substrate during a transfer process.

[0059] The inactive area IA is disposed to surround or surround the active area AA. In the inactive area IA, a configuration for stably performing a transfer process of the donor 100 may be disposed. For example, in the inactive area IA, a plurality of dummy bumps 132 for stably fixing the donor 100 when the donor 100 is bonded to other configurations may be disposed.

[0060] A plurality of chip bumps 131 are disposed on the resin layer 130 in the active area AA. The plurality of chip bumps 131 are bumps to be temporarily attached to the plurality of light emitting diodes LED during the transfer process, and extend from one surface of the resin layer 130. The plurality of chip bumps 131 may be formed integrally with the resin layer 130, and may be formed of a polymer material having the same viscoelasticity as the resin layer 130. For example, the plurality of chip bumps 131 may be formed of polydimethylsiloxane (PDMS), polyurethane acrylate (PUA), polyethylene glycol (PEG), polymethyl methacrylate (PMMA), polystyrene (PS), epoxy resin, polyurethane resin, or acrylic resin, but is not limited thereto.

[0061] A plurality of light emitting diodes LED are temporarily attached to the top surface of a plurality of chip bumps 131. During the transfer process, a plurality of light emitting diodes LED on a wafer or temporary substrate TS are transferred to a donor 100 to be temporarily attached to the top surface of the chip bumps 131 having viscoelasticity. Thereafter, a plurality of light emitting diodes LED attached to the chip bumps 131 of the donor 100 may be transferred to a target substrate. At this time, the number of light emitting diodes LED to be disposed on one chip bump 131 may vary depending on the design, but is not limited thereto.

[0062] A plurality of dummy bumps 132 are provided on the resin layer 130 in the inactive area IA. The plurality of dummy bumps 132 improve the bonding strength of the donor 100 and the counter substrate (e.g., the temporary substrate TS or the target substrate) during the transfer process, and can minimize or at least reduce the deformation of the plurality of chip bumps 131 due to the impact applied to the donor 300. For example, when a plurality of light emitting diodes LED are transferred from the temporary substrate TS to the donor 100 by bonding the temporary substrate TS and the donor 100, the plurality of dummy bumps 132 in the inactive area IA are in contact with the temporary substrate TS. By doing so, the entire contact area of ​​the temporary substrate TS and the donor 100 can be increased. Therefore, the donor 100 is stably bonded to the temporary substrate TS by the plurality of dummy bumps 132 to support the resin layer 130 and the chip bumps 131 of the donor 100 so as not to be deformed by external impact. The plurality of dummy bumps 132 can be formed to have a shape and size different from that of the chip bumps 131, but is not limited thereto.

[0063] In addition, although not shown in the figure, a plurality of alignment bumps, a plurality of alignment patterns, and a plurality of displacement measurement areas may be further provided in the inactive area IA. For example, a plurality of alignment bumps to which the alignment key is to be transferred or an alignment pattern as a mark to be aligned with the alignment image of the counter substrate are formed in the inactive area IA to align the donor 100 with the counter substrate during the transfer process. In addition, a displacement measurement area is formed in the inactive area IA, which is an empty space where a plurality of dummy bumps 132, alignment bumps, or alignment patterns are not provided, to allow laser to be transmitted to measure the parallelism of the donor 100.

[0064] Next, the adhesive layer 140 is disposed between the base substrate 110 and the airbag layer 120 and between the airbag layer 120 and the resin layer 130. The adhesive layer 140 attaches the base substrate 110, the airbag layer 120, and the resin layer 130 to each other. The adhesive layer 140 may be formed of a material having adhesiveness, and may be formed of, for example, an optically clear adhesive (OCA) or a pressure sensitive adhesive (PSA), but is not limited thereto.

[0065] Refer to Figures 1 to 3 , the airbag layer 120 is disposed between the base substrate 110 and the resin layer 130. The airbag layer 120 is configured to expand when air is injected, and the expanded airbag layer 120 applies pressure to the resin layer 130 to push the resin layer 130 and the plurality of chip bumps 131 in a direction from the bottom of the base substrate to the top of the base substrate 110. For example, the height of the plurality of chip bumps 131 may vary depending on the amount of air injected into the airbag layer 120. The airbag layer 120 includes a buffer unit 121 and a punching plate 122 disposed in the buffer unit 121, and the buffer unit 121 includes an air inlet 121a.

[0066] The buffer unit 121 is an elastic membrane that can expand when air is injected through the air inlet 121a, or shrink when air is discharged through the air inlet 121a. In order to shrink and expand the buffer unit 121, the air inlet 121a can be connected to a pump that can inject or discharge air. The buffer unit 121 can be a membrane formed of a material having elasticity (e.g., rubber). In addition, the buffer unit 121 can be formed with a small thickness to easily expand by air, and can be formed, for example, by a rubber membrane having a thickness of about 25 μm.

[0067] A punching plate 122 having a plurality of holes 122a is provided in the buffer unit 121. The punching plate 122 provided in the buffer unit 121 may be formed with a shape corresponding to the plane shape of the buffer unit 121. The punching plate 122 separates the top surface portion and the bottom surface portion of the buffer unit 121 so as not to adhere, so that when air is injected into the buffer unit 121, the buffer unit 121 can be easily expanded. In addition, the punching plate 122 includes a plurality of holes 122a to reduce the contact area with the top surface portion and the bottom surface portion of the buffer unit 121, thereby minimizing or at least reducing the adhesion of the buffer unit 121 to the punching plate 122. In addition, a fluorine coating having a low friction coefficient may also be formed on the surface of the punching plate 122 so that the punching plate 122 and the buffer unit 121 are not easily attached. For example, the punching plate 122 is formed of a material such as stainless steel (SUS) and is formed of a rigid plate having a small thickness of about 50 μm, but is not limited thereto.

[0068] The rest of the buffer unit 121 except the air inlet 121a may be sealed. At this time, the buffer unit 121 may not be formed integrally at first, but a portion covering the two surfaces of the punching plate 122 is formed separately, and the two surface portions of the buffer unit 121 are connected in the remaining portion except the air inlet 121a to form the buffer unit 121. For example, the top surface portion and the bottom surface portion of the buffer unit 121 are formed separately, and the punching plate 122 may be disposed between the separated top surface portion and the bottom surface portion. In addition, the top surface portion and the bottom surface portion may be connected in the connection area CA of the top surface portion and the bottom surface portion. At this time, the connection area CA may be the remaining edge of the buffer unit 121 except for the portion corresponding to the air inlet 121a. An adhesive is applied in the connection area CA corresponding to the edge of the bottom surface portion and the edge of the top surface portion, and the connection area CA is heated and pressurized to connect the bottom surface portion and the top surface portion. Therefore, the top surface portion and the bottom surface portion of the buffer unit 121 covering the two surfaces of the punching plate 122 are formed separately. After the bottom surface portion, the punching plate 122, and the top surface portion are placed in this order, the bottom surface portion and the top surface portion are connected to form the buffer unit 121 in which the punching plate 122 is disposed.

[0069] In addition, the positions of the resin layer 130 and the plurality of chip bumps 131 disposed on the buffer unit 121 are modified according to the modification of the buffer unit 121. For example, when air is injected to expand the buffer unit 121, the buffer unit 121 applies pressure to the resin layer 130 and the plurality of chip bumps 131 disposed on the buffer unit 121 to push the resin layer 130 and the plurality of chip bumps 131 in a direction from the bottom of the base substrate to the top of the base substrate 110. The buffer unit 121 expands to reduce the non-attachment probability or defect of the plurality of chip bumps 131 and the plurality of light emitting diodes LED, which will be referred to below. 4A to 4D Detailed description.

[0070] In the following, reference will be made to 4A to 4D A transfer method of a light emitting diode LED using the donor 100 according to an exemplary embodiment of the present disclosure is described.

[0071] Figure 4A and Figure 4B is a flowchart for explaining a transfer method of a light emitting diode using a donor according to an example embodiment of the present disclosure. Figure 4C and Figure 4D is an enlarged cross-sectional view for explaining a process of improving non-contact defects using an air bag layer during a transfer process of a light emitting diode using a donor according to an exemplary embodiment of the present disclosure. Figure 4A and Figure 4B In the drawings, for convenience of description, although it is illustrated that the temporary substrate TS is disposed on the stage ST, a wafer may be disposed on the stage ST, but is not limited thereto.

[0072] Reference Figure 4A , in order to transfer the plurality of light emitting diodes LED on the temporary substrate TS to the donor 100, the temporary substrate TS is loaded on the stage ST and the donor 100 is fixed to the head HD.

[0073] The temporary substrate TS may be a substrate in which a plurality of light emitting diodes LED manufactured in a wafer are arranged in a specific arrangement. A plurality of light emitting diodes LED are arranged on the temporary substrate TS in a specific arrangement using a method such as a self-assembly method or a selective transfer method. For example, a plurality of assembly lines are formed to self-assemble a plurality of light emitting diodes LED on the temporary substrate TS. In addition, a plurality of light emitting diodes LED are aligned in a specific arrangement by an electric field formed in a plurality of assembly lines for self-assembly. At this time, the light emitting diode LED is dielectrically polarized by the electric field to have polarity, and the dielectrically polarized light emitting diode LED can be moved or fixed in a specific direction by dielectrophoresis (DEP) (e.g., an electric field). Therefore, a plurality of LEDs are self-assembled on the temporary substrate TS in a specific arrangement (e.g., an interval corresponding to a plurality of sub-pixels of a display device) by a plurality of assembly lines. As another example, some of a plurality of light emitting diodes LED on a wafer or another donor 100 are selectively transferred to the temporary substrate TS so that a plurality of light emitting diodes LED can be arranged on the temporary substrate TS in a specific arrangement.

[0074] However, in addition to the temporary substrate TS, the wafer may be directly placed on the stage ST. A crystal layer is grown on the wafer by forming a material such as gallium nitride GaN constituting a plurality of light emitting diodes LED, the crystal layer is cut into individual chips and electrodes are formed to form a plurality of light emitting diodes LED. In addition, the wafer on which the plurality of light emitting diodes LED are formed is directly loaded onto the stage ST to transfer the plurality of light emitting diodes LED on the wafer to the donor 100.

[0075] The head HD is a member that moves the donor 100, and the donor 100 may be fixed to the head HD during the transfer process. For example, a suction hole is formed in the head HD to fix the donor 100 by a vacuum suction method. The head HD moves the donor 100 to attach or detach the donor 100 to the temporary substrate TS or the target substrate.

[0076] Reference Figure 4A and Figure 4B , the head HD moves to the stage ST to bond the temporary substrate TS and the donor 100, and transfers the plurality of light emitting diodes LED on the temporary substrate TS to the donor 100. In a state where the temporary substrate TS on which the plurality of light emitting diodes LED are disposed is located on the stage ST, the head HD and the donor 100 move to the temporary substrate TS to attach the plurality of light emitting diodes LED to the donor 100. The donor 100 and the temporary substrate TS are bonded so that the plurality of chip bumps 131 of the donor 100 come into contact with the plurality of light emitting diodes LED to transfer the plurality of light emitting diodes LED from the temporary substrate TS to the donor 100.

[0077] In addition, in the donor 100, a material for forming the resin layer 130 is coated and cured in a mold having grooves corresponding to the plurality of chip bumps 131 and the plurality of dummy bumps 132 to integrally form the resin layer 130 and the plurality of chip bumps 131 and the plurality of dummy bumps 132. However, during the process of coating and curing the resin layer 130 in the mold, the resin layer 130 may have different surface thicknesses. In this case, there may be the following defect: in the resin layer 130 formed with an irregular thickness, the chip bumps 131 disposed in the region of the resin layer 130 having a relatively small thickness do not contact the plurality of light emitting diodes LED. Therefore, the plurality of light emitting diodes LED are not transferred to some of the chip bumps 131, and the display device formed by the transfer process using such a donor 100 includes defective sub-pixels in which the plurality of light emitting diodes LED are not transferred, so that reliability may be reduced.

[0078] For example, refer to Figure 4C In some cases, the thicknesses of the resin layer 130 and the plurality of chip bumps 131 are irregularly formed, so that some chip bumps 131 may not contact the plurality of light emitting diodes LED. For example, gaps G may be formed between some chip bumps 131 and the plurality of light emitting diodes LED. In this state, when the donor 100 is separated from the temporary substrate TS, the plurality of light emitting diodes LED are not transferred to some chip bumps 131 of the donor 100, resulting in non-transfer defects of the light emitting diodes LED.

[0079] Therefore, the donor 100 according to the exemplary embodiment of the present disclosure includes the air bag layer 120 to compensate for the in-surface thickness difference of the resin layer 130 and reduce the non-contact defect between the plurality of light emitting diodes LED and the chip bumps 131 .

[0080] Reference Figure 4D When air is injected into the airbag layer 120 to expand the airbag layer 120, the resin layer 130 and the plurality of chip bumps 131 may protrude toward the stage ST through the airbag layer 120. For example, when the thickness of the airbag layer 120 is T1 before the air is injected into the airbag layer 120, the thickness of the airbag layer 120 after the air is injected may be T2 greater than T1.

[0081] In addition, when the airbag layer 120 disposed between the rigid base substrate 110 and the flexible resin layer 130 expands, the flexible resin layer 130 is pushed by pressure, and at least some of the chip bumps 131 can protrude from the existing position. In addition, the plurality of chip bumps 131 can contact the plurality of light-emitting diodes LED. Therefore, even if the resin layer 130 has a surface-to-surface thickness difference, the plurality of chip bumps 131 are pushed toward the plurality of light-emitting diodes LED using the airbag layer 120 to allow all of the plurality of chip bumps 131 to contact the plurality of light-emitting diodes LED.

[0082] At this time, the air pressure range of the airbag layer 120 may be set in consideration of the physical properties of the resin layer 130 and the plurality of chip bumps. For example, when the plurality of chip bumps 131 have a thickness of about 10 μm, the resin layer 130 has a thickness of about 190 μm, and the resin layer 130 and the plurality of chip bumps 131 are formed of PDMS having a hardness of 24 Hs, a tensile strength of about 6.5 Mps, a Young's modulus of about 1.35 Mpa to 1.93 Mpa (e.g., 1.6 Mpa), and an elongation of about 10% to 80% (e.g., 50%), the air pressure to be injected into the airbag layer 120 may be about 0.5 bar to 3 bar (e.g., 1.5 bar). The air is injected into the airbag layer 120 at a pressure of about 0.5 bar to 3 bar (e.g., 1.5 bar) to easily deform the resin layer 130 and the plurality of chip bumps 131.

[0083] In addition, 4A to 4D In the process of transferring a plurality of light emitting diodes LED from a temporary substrate TS to a donor 100, the use of an airbag layer 120 has been described. However, the airbag layer 120 can also be used to transfer a plurality of light emitting diodes LED from a donor 100 to a target substrate. For example, a target substrate is loaded on a stage ST, and a donor 100 to which a plurality of light emitting diodes LED are attached is fixed to a head, and then the plurality of donors 100 and the target substrate are joined to transfer the plurality of light emitting diodes LED to the target substrate. At this time, air is injected into the airbag layer 120 to push the resin layer 130 and the plurality of chip bumps 131 toward the target substrate, and to bring the plurality of light emitting diodes LED into contact with the target substrate. Therefore, the plurality of light emitting diodes LED of the donor 100 are brought into contact with the target substrate using the airbag layer 120 to reduce non-transfer defects of the plurality of light emitting diodes LED from the donor 100 to the target substrate.

[0084] Therefore, the donor 100 according to the exemplary embodiment of the present disclosure includes an airbag layer 120, which pushes the resin layer 130 to reduce the non-contact defects of the plurality of chip bumps 131 and the plurality of light emitting diodes LED. Since the resin layer 130 and the plurality of chip bumps 131 are coated and cured in the mold to be formed, there may be a thickness difference within the surface of the resin layer 130. In this case, the light emitting diode LED does not contact some of the plurality of chip bumps 131, so that the light emitting diode LED is not transferred. In this case, the resin layer 130 and the plurality of chip bumps 131 are pushed to the stage ST using the airbag layer 120, so that the gap G between the plurality of chip bumps 131 and the plurality of light emitting diodes LED is removed. In addition, the non-contact defects of the plurality of chip bumps 131 and the plurality of light emitting diodes LED are reduced. Therefore, in the donor 100 according to the exemplary embodiment of the present disclosure, the airbag layer 120 for compensating for the thickness irregularities of the resin layer 130 and the plurality of chip bumps 131 is formed to minimize or at least reduce the non-transfer defects of the plurality of light emitting diodes LED. In this case, the airbag layer 120 may also become a thickness compensation layer, a thickness variation layer, or a thickness uniformization layer, but the present disclosure is not limited thereto.

[0085] Figure 5 is a cross-sectional view of a donor according to another example embodiment of the present disclosure. Figure 6 is a cross-sectional view of a donor and a head according to another example embodiment of the present disclosure. Figure 5 and Figure 6 The donor 500 has a structure with Figures 1 to 4D The structures of the donor 100 are different in the base substrate 510 and the airbag layer 520, but other configurations are substantially the same, so a redundant description will be omitted or may be briefly provided.

[0086] Reference Figure 5 , the base substrate 510 includes a pad unit 511 formed on the bottom surface of the base substrate 510. The pad unit 511 is a configuration that adheres the head HD and the donor 500 so that air does not leak between the second hole H2 of the head HD and the base substrate 510 when the donor 500 is fixed to the head HD by sucking air through the second hole H2 as a suction hole. The pad unit 511 may cover the remaining portion of the bottom surface of the base substrate 510 except for the portion where the plurality of injection holes 510a are formed. For example, the pad unit 511 may be a film formed of rubber, but embodiments of the present disclosure are not limited thereto.

[0087] The punching plate 522 of the airbag layer 520 is disposed on the base substrate 510. The punching plate 522 is disposed to contact the base substrate 510. In addition, the buffer unit 521 of the airbag layer 520 covers the top surface of the punching plate 522 and a portion of the edge is connected to the base substrate 510. The entire edge of the buffer unit 521 may be connected to the base substrate 510. Therefore, the punching plate 522 of the airbag layer 520 is disposed in the space between the buffer unit 521 and the base substrate 510, rather than being disposed inside the buffer unit 521.

[0088] A plurality of injection holes 510a are formed in the base substrate 510 and the cushion unit 511. The plurality of injection holes 510a may overlap with at least some of the plurality of holes 522a of the punching plate 522. The plurality of injection holes 510a of the base substrate 510 may be connected to some of the plurality of holes 522a of the punching plate 522. Therefore, air may be injected into the airbag layer 520 through the plurality of injection holes 510a of the base substrate 510. Air is injected into one surface of the airbag layer 520 through the plurality of injection holes 510a formed in the base substrate 510, rather than forming a separate air inlet 121a in the cushion unit 521 of the airbag layer 520. Therefore, the plurality of injection holes 510a may be used as the air inlet 121a of the airbag layer 520.

[0089] Reference Figure 6 , a plurality of first holes H1 and a plurality of second holes H2 are formed in the head HD to which the donor 500 is fixed.

[0090] The plurality of first holes H1 are holes for injecting air into the airbag layer 520 through the plurality of injection holes 510a of the base substrate 510. The plurality of first holes H1 overlap the plurality of injection holes 510a and are connected to the plurality of injection holes 510a and the holes 522a of the punching plate 522 to form a path for injecting air into the buffer unit 521.

[0091] The plurality of second holes H2 are holes for sucking air to fix the donor 500 to the head HD. The plurality of second holes H2 may overlap with the remaining area of ​​the base substrate 510 except for the area where the plurality of injection holes 510a are formed. The plurality of second holes H2 suck air by a vacuum adsorption method to fix the donor 500 to the head HD.

[0092] In a display device according to another exemplary embodiment of the present disclosure, a plurality of injection holes 510a are formed in a base substrate 510, and air is injected into one surface of an airbag layer 520 through the plurality of injection holes 510a. In this case, a separate air inlet 121a is not formed on the side surface of the airbag layer 520, and air is directly injected into the airbag layer 520 from the head HD without connecting a pump, so that the process is simplified. In addition, the adhesive layer 140 between the airbag layer 520 and the base substrate 510 is removed, and one of the buffer units 521 covering both surfaces of the punching plate 522 can be omitted, so that the overall thickness of the donor 500 can be reduced. In addition, the adhesive layer 140 between the airbag layer 520 and the resin layer can also be removed depending on the design. For example, the resin layer 130 can be formed by immediately applying a material forming the resin layer 130 and then curing the material. In this case, even if the adhesive layer 140 is not provided, the resin layer 130 can be attached to the donor 500, so that the adhesive layer 140 can be omitted depending on the design, but is not limited thereto.

[0093] Figure 7 is a plan view of an airbag layer of a donor according to yet another example embodiment of the present disclosure. Figure 8 is a plan view of an airbag layer of a donor according to yet another example embodiment of the present disclosure. Figure 7 and Figure 8 The donors 700 and 800 have airbag layers 720 and 820, and the structures of the airbag layers 720 and 820 are similar to those of Figures 1 to 6 The structures of the airbag layers of the donors 100 and 500 are different, but the other configurations are substantially the same, so a redundant description will be omitted or may be briefly provided. Figure 7 and Figure 8 , for convenience of description, the punching plates 722 and 822 and the plurality of holes 722a and 822a provided in the buffer units 721 and 821 are illustrated by solid lines.

[0094] Reference Figure 7 , the airbag layer 720 of the donor 700 according to another exemplary embodiment of the present disclosure includes a plurality of regions into which air is independently injected. The airbag layer 720 is divided into a plurality of regions and the air injected into each of the plurality of regions is individually controlled. For example, the airbag layer 720 may include a first region A1 on the upper left end, a second region A2 on the upper right end, a third region A3 on the lower left end, and a fourth region A4 on the lower right end, but embodiments of the present disclosure are not limited thereto.

[0095] The multiple regions of the airbag layer 720 are divided by the connection area CA of the buffer unit 721. The connection area CA can be set along the boundary between the multiple regions and used as a separator to block the air flow between the multiple regions. Therefore, the air injected into each region can pass through the connection area CA without flowing to other regions. Therefore, one surface of the buffer unit 721 is connected to another surface of the buffer unit 721 or a surface of the base substrate 510 at the boundary of the multiple regions to divide the multiple regions. The top surface portion and the bottom surface portion of the buffer unit 721 are connected to each other at the boundary of the multiple regions, or the connection area CA connected to the surface of the buffer unit 721 and the base substrate 510 is formed to inject air into each region of the multiple regions. The amount of air injected into each region of the multiple regions is adjusted to control the pressure of each region to be different. In addition, by injecting air into each region of the multiple regions simultaneously or sequentially, the air injection sequence can be configured in various ways.

[0096] The airbag layer 720 includes a plurality of air inlets 721a to inject air into each of the plurality of regions. For example, the cushioning unit 721 of the airbag layer 720 may include four air inlets 721a to inject air into each of the first to fourth regions A1 to A4. Figure 7 In the example, the air inlet 721a is extended to the side surface of the airbag layer 720, but Figure 5 and Figure 6 Similar to the airbag layer 520 , the air inlet may be formed with a structure for directly injecting air into one surface of the airbag layer 720 .

[0097] The airbag layer 720 includes a plurality of perforated plates 722. The plurality of perforated plates 722 may be provided to correspond to each of the plurality of regions. For example, the plurality of perforated plates 722 include a first perforated plate 7221 provided in the first region A1, a second perforated plate 7222 provided in the second region A2, a third perforated plate 7223 provided in the third region A3, and a fourth perforated plate 7224 provided in the fourth region A4.

[0098] Reference Figure 8 , the airbag layer 820 of the donor 800 according to another exemplary embodiment of the present disclosure includes a plurality of regions into which air is independently injected. For example, the airbag layer 820 may include a first region A1 located at the center of the airbag layer 820 and a second region A2 surrounding or surrounding the first region A1. The second region A2 may be formed in a frame shape. In addition, the connection region CA of the buffer unit 821 may include a connection region CA at least partially surrounding or surrounding the first region A1 and a connection region CA at least partially surrounding or surrounding the second region A2.

[0099] In this case, the first punching plate 8221 among the plurality of punching plates 822 disposed in the first area A1 is formed to have a rectangular shape corresponding to the first area A1. In addition, the second punching plate 8222 among the plurality of punching plates 822 disposed in the second area A2 is formed to have a frame shape at least partially surrounding or surrounding the first punching plate 8221.

[0100] The air may be injected into the first area A1 and the second area A2 by various methods. For example, the air may be directly injected into one surface of the airbag layer 820 in the first area A1 and the second area A2, such as Figure 5 and Figure 6 As another example, in the first area A1, air is injected into one surface of the airbag layer 820, and in the second area A2, a separate air inlet is formed on a side surface of the second area A2 to inject air.

[0101] In addition, the air injected into the first area A1 and the second area A2 of the airbag layer 820 is controlled differently so that the chip bump 131 located in the center of the donor 800 and the chip bump 131 located in the peripheral portion of the donor 800 are controlled differently. For example, the air may be injected in the order of the first area A1 and the second area A2 to sequentially attach the chip to the chip bump 131 from the center to the peripheral portion of the donor. As another example, when many defects occur in the peripheral portion of the donor 800 in which the light emitting diodes LED are not attached to the chip bump 131, more air is injected into the second area A2 to configure the pressure of the second area A2 to be higher than the pressure of the first area A1. By doing so, the chip bump 131 located in the second area A2 protrudes more.

[0102] Therefore, in the donors 700 and 800 according to another exemplary embodiment of the present disclosure, the airbag layers 720 and 820 are divided into a plurality of regions, and air is independently injected into the plurality of regions to independently control whether the plurality of chip bumps 131 and the light emitting diodes LED are in contact with each other in each region. For example, when only the first and second regions A1 and A2 of the donors 700 and 800 overlap with the temporary substrate TS, air is injected into the first and second regions A1 and A2 to minimize or at least reduce the non-contact defects of the light emitting diodes LED and the plurality of chip bumps 131. As another example, considering the non-contact defect rate of the plurality of chip bumps 131 and the light emitting diodes LED or the thickness deviation of the donors 700 and 800, the pressure of the air injected into each of the plurality of regions of the donors 700 and 800 can be controlled to be different. Therefore, the transfer process is performed by dividing the airbag layers 720 and 820 of the donors 700 and 800 into a plurality of regions and selectively injecting air into each of the plurality of regions according to the situation to reduce the non-transfer defects of the light emitting diodes LED and optimize the transfer process.

[0103] In the following, reference will be made to Fig.9A and Fig. 9B The effect of improving the transfer defect of the donor 100 according to the exemplary embodiment of the present disclosure is described in more detail.

[0104] Fig.9A are images examining the results of a transfer process using a donor according to a comparative embodiment. Fig. 9B are images for checking the results of a transfer process using a donor according to an example embodiment of the present disclosure.

[0105] The donor 10 according to the comparative embodiment has the same configuration as the donor 100 according to the exemplary embodiment of the present disclosure, except that the airbag layer 120 is not included. For example, the donor 10 according to the comparative embodiment includes a base substrate 110, an adhesive layer 140, a resin layer 130, a plurality of chip bumps 131, and a plurality of dummy bumps 132.

[0106] Fig.9A and Fig. 9B The image of is an image obtained by inspecting the donors 10 and 100 after a transfer process of attaching the light emitting diodes LED on the temporary substrate TS to the plurality of chip bumps 131 of the donors 10 and 100. Points shown on the image indicate positions of chip bumps 131 to which no light emitting diodes LED are attached among the plurality of chip bumps 131.

[0107] Reference Fig.9A , the donor 10 according to the comparative embodiment is bonded to the temporary substrate TS to attach the plurality of light emitting diodes LED on the temporary substrate TS to the plurality of chip bumps 131 of the donor 10 according to the comparative embodiment. As a result of inspecting the plurality of chip bumps 131 of the donor 10, it is confirmed that there are a plurality of chip bumps 131 to which the light emitting diodes LED are not attached among the plurality of chip bumps 131.

[0108] Reference Fig. 9B , the donor 100 according to the exemplary embodiment of the present disclosure is bonded to the temporary substrate TS to attach the plurality of light emitting diodes LED on the temporary substrate TS to the plurality of chip bumps 131 of the donor 100 according to the exemplary embodiment of the present disclosure. At this time, during the transfer process, air is injected into the airbag layer 120 to minimize or at least reduce the gap G between the plurality of chip bumps 131 and the plurality of light emitting diodes LED to transfer the light emitting diodes LED to the donor 100. Therefore, as a result of inspecting the plurality of chip bumps 131 of the donor 100 according to the exemplary embodiment of the present disclosure, it can be confirmed that the chip bumps 131 to which the light emitting diodes LED are not attached among the plurality of chip bumps 131 are significantly reduced compared to the inspection result of the donor 10 according to the comparative embodiment.

[0109] Therefore, the donors 100, 500, 700, and 800 according to various exemplary embodiments of the present disclosure include the air bag layer 120, which applies pressure to the plurality of chip bumps 131 during the transfer process to remove the gap G between the plurality of chip bumps 131 and the light emitting diodes LED. Therefore, the situation that the plurality of chip bumps 131 and the plurality of light emitting diodes LED are not in contact is minimized or reduced to reduce transfer defects of the light emitting diodes LED.

[0110] Example implementations of the present disclosure may also be described as follows:

[0111] According to an aspect of the present disclosure, a donor includes a base substrate, a resin layer disposed on the base substrate and including a plurality of chip bumps, and an airbag layer disposed between the base substrate and the resin layer and configured to be expandable by air injected from the outside.

[0112] The air bladder layer may be configured to expand and push the resin layer and the plurality of chip bumps in a direction from a bottom of the base substrate to a top of the base substrate.

[0113] The airbag layer may include a perforated plate including a plurality of holes and a buffer unit at least partially surrounding or surrounding at least a portion of the perforated plate and formed of an elastic material, and wherein the buffer unit may be configured to expand when air is injected into the airbag layer.

[0114] The buffer unit may include a top surface portion and a bottom surface portion covering both surfaces of the punching plate.

[0115] The buffer unit may further include an air inlet and the top surface portion and the bottom surface portion are connected at a remaining portion of an edge of the buffer unit except for a portion corresponding to the air inlet.

[0116] The punching plate may be in contact with a top surface of the base substrate, and the buffer unit may be connected to the top surface of the base substrate while covering the punching plate.

[0117] The base substrate may include a plurality of injection holes overlapping at least some of the plurality of holes of the punching plate.

[0118] The donor may further include a pad unit covering a remaining portion of the bottom surface of the base substrate except for a portion where the plurality of injection holes are provided.

[0119] The airbag layer may include a plurality of regions, the punching plate may include a plurality of punching plates corresponding to the plurality of regions, and one surface of the buffer unit may be connected to any one of another surface of the buffer unit or a surface of the base substrate at the boundary of the plurality of regions. The fluorine coating may be formed on one or more surfaces of the punching plate. The donor may further include an adhesive layer disposed between the airbag layer and the base substrate and between the airbag layer and the resin layer. The resin layer may include an effective region and an ineffective region adjacent to the effective region, and wherein a plurality of chip bumps may be disposed in the effective region, and a plurality of dummy bumps may be disposed in the ineffective region.

[0120] According to one aspect of the present disclosure, a method for transferring a light-emitting diode using a donor includes the following steps: loading a temporary substrate having a plurality of light-emitting diodes arranged on a top surface onto a table and fixing the donor to a head; joining the temporary substrate and the donor by moving the head to the table; injecting air into an airbag layer of the donor; and moving the head to separate the temporary substrate and the donor.

[0121] The step of injecting air into the airbag layer of the donor may include injecting air into the airbag layer and expanding the airbag layer to push the plurality of chip bumps of the donor toward the plurality of light emitting diodes.

[0122] In the step of bonding the temporary substrate and the donor, at least some of the plurality of chip bumps may have gaps with the plurality of light emitting diodes, and in the step of injecting air into the airbag layer, at least some of the plurality of chip bumps may contact the plurality of light emitting diodes.

[0123] The airbag layer may include multiple areas that are independently infused with air.

[0124] The step of injecting air into the bladder layer of the donor may include injecting air into only some of the plurality of regions.

[0125] The step of injecting air into the airbag layer of the donor may include sequentially injecting air into each of the plurality of regions.

[0126] The step of injecting air into the airbag layer of the donor may include injecting different amounts of air into each of the plurality of regions. According to one aspect of the present disclosure, a method for transferring a light emitting diode using a donor includes the following steps: loading a target substrate on a stage and fixing a donor having a plurality of light emitting diodes attached to a head; engaging the target substrate and the donor by moving the head to the stage; injecting air into the airbag layer of the donor; and moving the head to separate the target substrate from the donor.

[0127] Although the example embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the present disclosure is not limited thereto and can be implemented in many different forms without departing from the technical concept of the present disclosure. Therefore, the example embodiments of the present disclosure are provided for illustrative purposes only and are not intended to limit the technical concept of the present disclosure. The scope of the technical concept of the present disclosure is not limited thereto. Therefore, it should be understood that the above-mentioned example embodiments are illustrative in all aspects and do not limit the present disclosure. All technical concepts within the equivalent scope of the present disclosure should be interpreted as falling within the scope of the present disclosure.

[0128] CROSS-REFERENCE TO RELATED APPLICATIONS

[0129] This application claims the benefit of and priority to Korean Patent Application No. 10-2023-0077493 filed in Korea on Jun. 16, 2023, which is expressly incorporated by reference in its entirety for all purposes as if fully set forth herein.

Claims

1. A donor, wherein the donor include: Basic substrate; a resin layer disposed on the base substrate and comprising a plurality of chip bumps; as well as An airbag layer is provided between the base substrate and the resin layer and is configured to be expandable by air injected from the outside.

2. The donor according to claim 1, in, The air bag layer is configured to expand and push the resin layer and the plurality of chip bumps in a direction from a bottom of the base substrate to a top of the base substrate.

3. The donor according to claim 1, in, The airbag layer comprises: a perforated plate comprising a plurality of holes; and a buffer unit surrounding at least a portion of the punching plate and comprising an elastic material, and Wherein, the buffer unit is configured to expand when the air is injected into the airbag layer.

4. The donor according to claim 3, in, The buffer unit includes a top surface portion and a bottom surface portion covering both surfaces of the punching plate.

5. The donor according to claim 4, in, The buffer unit also includes an air inlet, and The top surface portion and the bottom surface portion are connected at a remaining portion of an edge of the buffer unit except a portion corresponding to the air inlet.

6. The donor according to claim 3, in, The punching plate is in contact with a top surface of the base substrate, and the buffer unit is connected to the top surface of the base substrate while covering the punching plate.

7. The donor according to claim 6, in, The base substrate includes a plurality of injection holes overlapping at least some of the plurality of holes of the punching plate.

8. The donor according to claim 7, wherein the donor further comprises include: A pad unit covers a remaining portion of a bottom surface of the base substrate except for a portion where the plurality of injection holes are disposed.

9. The donor according to claim 3, in, The airbag layer includes a plurality of regions, the punching plate includes a plurality of punching plates corresponding to the plurality of regions, and one surface of the buffer unit is connected to either another surface of the buffer unit or one surface of the base substrate at a boundary of the plurality of regions.

10. The donor according to claim 3, in, A fluorine coating is formed on one or more surfaces of the punching plate. 11 . The donor according to claim 1 , further comprising an adhesive layer disposed between the airbag layer and the base substrate and between the airbag layer and the resin layer.

12. The donor according to claim 1, in, The resin layer includes an effective area and an ineffective area adjacent to the effective area, and The plurality of chip bumps are disposed in the effective area, and the plurality of dummy bumps are disposed in the ineffective area.

13. A method for transferring a light emitting diode using a donor, the method comprising: The following steps are involved: loading a temporary substrate having a plurality of light emitting diodes disposed on a top surface onto a stage, and fixing a donor to a head; engaging the temporary substrate and the donor by moving the head to the stage; injecting air into the airbag layer of the donor; as well as The head is moved to separate the temporary substrate from the donor.

14. The transfer method according to claim 13, in, The step of injecting air into the airbag layer of the donor includes injecting air into the airbag layer and expanding the airbag layer to push the plurality of chip bumps of the donor toward the plurality of light emitting diodes.

15. The transfer method according to claim 14, in, In the step of bonding the temporary substrate and the donor, at least some of the plurality of chip bumps have gaps with the plurality of light emitting diodes, and in the step of injecting air into the airbag layer, at least some of the plurality of chip bumps contact the plurality of light emitting diodes.

16. The transfer method according to claim 14, in, The airbag layer includes a plurality of regions that are independently infused with air.

17. The transfer method according to claim 16, in, The step of injecting air into the airbag layer of the donor includes injecting air into only some of the plurality of regions.

18. The transfer method according to claim 16, in, The step of injecting air into the airbag layer of the donor includes sequentially injecting air into each of the plurality of regions.

19. The transfer method according to claim 16, in, The step of injecting air into the airbag layer of the donor includes injecting a different amount of air into each of the plurality of regions.

20. A method for transferring a light emitting diode using a donor, the method comprising: The following steps are involved: loading a target substrate on a stage and fixing a donor having a plurality of light emitting diodes attached thereto to a head; engaging the target substrate and the donor by moving the head to the stage; injecting air into the airbag layer of the donor; as well as The head is moved to separate the target substrate from the donor.

Images