Semiconductor module

Abstract

In a semiconductor module (10), an O1 terminal (140) and an O2 terminal (210) are connected, and a first module (11) and a second module (12) are connected. The first module (11) and the second module (12) face each other in the thickness direction. The current path direction in the first module (11) is opposite to the current path direction in the second module (12). As a result, an increase in inductance can be suppressed in the semiconductor module.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor module. Background Art

[0002] Conventionally, as described in Patent Document 1, a three-level inverter device having a first power module, a second power module, and a third power module is known. In the first power module, the first power transistor is used as an upper arm, and the first diode is used as a lower arm. In the second power module, the second power transistor is used as an upper arm, and the third power transistor is used as a lower arm. In the third power module, the second diode is used as an upper arm, and the fourth power transistor is used as a lower arm.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2020-39221 Summary of the invention

[0006] In the three-level inverter device described in Patent Document 1, it is necessary to connect the first power module and the second power module with wiring, and to connect the second power module and the third power module with wiring. These wirings increase the inductance of the three-level inverter device.

[0007] An object of the present disclosure is to provide a semiconductor module that suppresses an increase in inductance.

[0008] According to one embodiment of the present disclosure, a semiconductor module includes a first module and a second module.

[0009] The first module comprises: a first terminal extending in one direction; a first element comprising a first electrode connected to the first terminal, a second electrode, a first gate electrode for causing a current to flow between the first electrode and the second electrode based on an applied voltage, and a first diode connected to the first electrode and the second electrode; a second element comprising a third electrode connected to the second electrode, a fourth electrode, a second gate electrode for causing a current to flow between the third electrode and the fourth electrode based on an applied voltage, and a second diode connected to the third electrode and the fourth electrode; a second terminal connected to the third electrode and extending in one direction, connected to a load; and a third terminal connected to the fourth electrode and extending in one direction. The second module comprises: a fourth terminal extending in one direction and connected to the second terminal so as to connect the first module and the second module; a third element including a fifth electrode connected to the fourth terminal, a sixth electrode, a third gate electrode for causing a current to flow between the fifth electrode and the sixth electrode based on an applied voltage, and a third diode connected to the fifth electrode and the sixth electrode; a fourth element including a seventh electrode, an eighth electrode connected to the sixth electrode, a fourth gate electrode for causing a current to flow between the seventh electrode and the eighth electrode based on an applied voltage, and a fourth diode connected to the seventh electrode and the eighth electrode; a fifth terminal connected to the seventh electrode and extending in one direction; and a sixth terminal connected to the seventh electrode and extending in one direction. The first module is opposed to the second module in the thickness direction of the first module, and the current path direction in the first module is opposite to the current path direction in the second module.

[0010] As a result, a portion is generated where the directions of the magnetic fields caused by the currents flowing through the first module and the second module are different from each other. Therefore, the first module and the second module cancel each other's magnetic fields. Therefore, the increase in inductance in the first module and the second module is suppressed. As a result, the increase in inductance of the semiconductor module is suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 This is a circuit diagram showing a semiconductor module according to the first embodiment.

[0012] Figure 2 This is a diagram of a first module of the semiconductor module as viewed from the drain side.

[0013] Figure 3 This is a diagram of the first module as viewed from the source side.

[0014] Figure 4 yes Figure 2 and Figure 3 IV-IV line cross-section diagram.

[0015] Figure 5 yes Figure 2 and Figure 3V-V line cross-section diagram.

[0016] Figure 6 yes Figure 3 VI-VI line cross-section diagram.

[0017] Figure 7 yes Figure 3 Cross-sectional view along line VII-VII.

[0018] Figure 8 yes Figure 2 and Figure 3 Cross-sectional view along line VIII-VIII.

[0019] Fig. 9 This is a diagram of the second module of the semiconductor module as viewed from the drain side.

[0020] Fig.10 This is a diagram of the second module as viewed from the source side.

[0021] Fig.11 It is a perspective view showing an extension portion of a semiconductor module and a capacitor.

[0022] Fig.12 This is a cross-sectional view of the extension portion and the capacitor.

[0023] Fig.13 This is a circuit diagram showing a first commutation path of a semiconductor module.

[0024] Fig.14 This is a circuit diagram showing a second commutation path of a semiconductor module.

[0025] Fig.15 This is a circuit diagram showing a third commutation path of the semiconductor module.

[0026] Fig.16 This is a circuit diagram showing a fourth commutation path of the semiconductor module.

[0027] Fig.17 It is a diagram showing the first commutation path and the third commutation path when the first module is viewed from the drain side.

[0028] Fig.18 It is a diagram showing the first commutation path and the third commutation path when the second module is viewed from the drain side.

[0029] Fig.19 It is a diagram showing the second commutation path and the fourth commutation path when the first module is viewed from the drain side.

[0030] Fig. 20 It is a diagram showing the second commutation path and the fourth commutation path when the second module is viewed from the drain side.

[0031] Fig.21 This is a diagram of a first module of the semiconductor module according to the second embodiment, as viewed from the drain side.

[0032] Fig. 22 This is a diagram of the first module as viewed from the source side.

[0033] Fig.23 This is a diagram of the second module of the semiconductor module as viewed from the drain side.

[0034] Fig.24 This is a diagram of the second module as viewed from the source side. DETAILED DESCRIPTION

[0035] In the following embodiments, the same or equivalent parts are denoted by the same reference numerals and their description is omitted.

[0036] (First embodiment)

[0037] In the semiconductor module of the present embodiment, an increase in the inductance of the semiconductor module is suppressed. The semiconductor module is used for, for example, a three-level inverter of a bidirectional switching type.

[0038] Specifically, if Figures 1 to 12 As shown, the semiconductor module 10 includes a first module 11 , a second module 12 , a first extension portion 31 , a second extension portion 32 , a third extension portion 33 , a first capacitor 41 , and a second capacitor 42 .

[0039] Module 11 Figures 1 to 8 As shown, the first module 11 has a P terminal 110, a first semiconductor element 111, a first lead frame 121, a second lead frame 122, and a first lead terminal 131. In addition, the first module 11 has a second semiconductor element 112, a third lead frame 123, a fourth lead frame 124, a second lead terminal 132, a first freewheeling diode 137, a second freewheeling diode 138, an O1 terminal 140, an N terminal 150, and a first sealing portion 160.

[0040] The P terminal 110 is equivalent to the first terminal. Figure 2 to Figure 4 As shown, it is formed of metal in a plate shape extending in one direction Da.

[0041] The first semiconductor element 111 corresponds to the first element. Figure 1 to Figure 4 As shown, a first transistor 171 , a first bonding wire 181 , and a first diode 191 are included.

[0042] The first transistor 171 is, for example, a MOSFET using Si or SiC. MOSFET is an abbreviation of Metal-Oxide-Semiconductor Field-Effect Transistor.

[0043] Furthermore, if Figure 1 As shown, the first transistor 171 includes a first drain electrode 1711 , a first source electrode 1712 , and a first gate electrode 1713 .

[0044] The first drain electrode 1711 is equivalent to the first electrode. Figure 4 As shown in FIG. 1 , the first lead frame 121 is connected to the first lead frame 121 via solder or the like. The first lead frame 121 is connected to the P terminal 110 via solder or the like. Therefore, the first drain electrode 1711 is connected to the P terminal 110 via the first lead frame 121 or the like. In addition to the function of the connecting member, the first lead frame 121 also has the function of a heat spreader.

[0045] The first source electrode 1712 corresponds to the second electrode, and is connected to the second lead frame 122 via solder, a copper spacer, etc. In addition to the function of a connection member, the second lead frame 122 also has a function of a heat spreader.

[0046] The first gate electrode 1713 is connected to the first lead terminal 131 via a pad and a first bonding wire 181. The first lead terminal 131 is connected to a drive circuit (not shown). The first gate electrode 1713 allows a current to flow between the first drain electrode 1711 and the first source electrode 1712 based on a voltage applied from the drive circuit to the first gate electrode 1713.

[0047] Back to Figure 1 The first diode 191 is, for example, a Zener diode. The cathode of the first diode 191 is connected to the first drain electrode 1711 and the first lead frame 121. The anode of the first diode 191 is connected to the first source electrode 1712 and the second lead frame 122. Thus, the first diode 191 is connected in parallel with the first transistor 171.

[0048] The second semiconductor element 112 is Figure 2 and Figure 3 As shown in FIG. 1 , the first semiconductor element 111 is arranged together with the first semiconductor element 111 in a direction orthogonal to the one direction Da and the thickness direction DT of the first semiconductor element 111. Furthermore, the second semiconductor element 112 corresponds to the second element, and includes the second transistor 172, the second bonding wire 182, and the second diode 192. In addition, the thickness direction DT of the first semiconductor element 111 corresponds to the thickness direction of the first module 11.

[0049] The second transistor 172 is, for example, a MOSFET made of Si or SiC. Figure 1 As shown, the second transistor 172 includes a second drain electrode 1721 , a second source electrode 1722 , and a second gate electrode 1723 .

[0050] The second drain electrode 1721 is equivalent to the third electrode. Figure 5 As shown in FIG. 1 , the third lead frame 123 is connected to the third lead frame 123 via solder or the like. Figure 6 As shown in FIG. 1 , the second lead frame 1721 is connected to the second lead frame 122 via a wiring layer, solder, and a copper spacer. Therefore, the second drain electrode 1721 is connected to the first source electrode 1712 via the third lead frame 123 and the second lead frame 122. Furthermore, the third lead frame 123 has a function as a heat spreader in addition to the function of a connecting member.

[0051] The second source electrode 1722 is equivalent to the fourth electrode. Figure 5 As shown in FIG. 1 , the fourth lead frame 124 is connected to the fourth lead frame 124 via solder and copper spacers, etc. In addition to the function of a connection member, the fourth lead frame 124 also functions as a heat spreader.

[0052] The second gate electrode 1723 is connected to the second lead terminal 132 via a pad and a second bonding wire 182. The second lead terminal 132 is connected to a drive circuit. The second gate electrode 1723 allows a current to flow between the second drain electrode 1721 and the second source electrode 1722 based on a voltage applied to the second gate electrode 1723 from the drive circuit.

[0053] Back to Figure 1 The second diode 192 is, for example, a Zener diode. The cathode of the second diode 192 is connected to the second drain electrode 1721 and the third lead frame 123. The anode of the second diode 192 is connected to the second source electrode 1722 and the fourth lead frame 124. Thus, the second diode 192 is connected in parallel with the second transistor 172.

[0054] The first flywheel diode 137 is connected in parallel to the first semiconductor element 111 . The second flywheel diode 138 is connected in parallel to the second semiconductor element 112 .

[0055] The O1 terminal 140 is equivalent to the second terminal. Figure 5As shown in the figure, the O1 terminal 140 is connected to the third lead frame 123 via solder or the like. In addition, since the third lead frame 123 is connected to the second drain electrode 1721, the O1 terminal 140 is connected to the second drain electrode 1721 via the third lead frame 123 or the like. Furthermore, the third lead frame 123 is connected to the second lead frame 122, and the second lead frame 122 is connected to the first source electrode 1712. Therefore, the O1 terminal 140 is connected to the first source electrode 1712 via the third lead frame 123 and the second lead frame 122. Furthermore, the O1 terminal 140 is formed of metal into a plate shape extending in one direction Da. In addition, the O1 terminal 140 is as shown in the figure. Figure 1 As shown, the load 50 is connected. The load 50 is, for example, an LC filter, a motor, or the like.

[0056] The N terminal 150 is equivalent to the third terminal. Figure 7 As shown in FIG. 1 , the N terminal 150 is connected to the fourth lead frame 124 via a wiring layer, solder, and a copper spacer. Since the fourth lead frame 124 is connected to the second source electrode 1722, the N terminal 150 is connected to the second source electrode 1722 via the fourth lead frame 124. Figure 8 As shown in FIG. 1 , the metal is formed into a plate shape extending in one direction Da. Figure 2 and Figure 3 As shown, the N terminal 150 is arranged with a gap between the P terminal 110 and the O1 terminal 140 in a direction perpendicular to the one direction Da and the thickness direction DT.

[0057] The first sealing portion 160 is formed of a resin or the like. Furthermore, the first sealing portion 160 covers the first semiconductor element 111, the second semiconductor element 112, the first freewheeling diode 137, and the second freewheeling diode 138. In addition, the first sealing portion 160 covers the first lead frame 121 and the second lead frame 122 in such a manner that a portion of the first lead frame 121 and the second lead frame 122 is exposed from the first sealing portion 160. Furthermore, the first sealing portion 160 covers the third lead frame 123 and the fourth lead frame 124 in such a manner that a portion of the third lead frame 123 and the fourth lead frame 124 is exposed from the first sealing portion 160. In addition, the first sealing portion 160 covers a portion of the first lead terminal 131 in such a manner that the first lead terminal 131 protrudes from the first sealing portion 160. Furthermore, the first sealing portion 160 covers a portion of the second lead terminal 132 in such a manner that the second lead terminal 132 protrudes from the first sealing portion 160. Furthermore, the first sealing portion 160 covers a portion of the P terminal 110 in such a manner that the P terminal 110 protrudes from the first sealing portion 160. Furthermore, the first sealing portion 160 covers a portion of the O1 terminal 140 in such a manner that the O1 terminal 140 protrudes from the first sealing portion 160. Furthermore, the first sealing portion 160 covers a portion of the N terminal 150 in such a manner that the N terminal 150 protrudes from the first sealing portion 160.

[0058] Therefore, if Figure 2 to Figure 5 and Figure 8 As shown, the P terminal 110 has a first protrusion 1100 protruding from the first sealing portion 160 . The O1 terminal 140 has a second protrusion 1400 protruding from the first sealing portion 160 . The N terminal 150 has a third protrusion 1500 protruding from the first sealing portion 160 .

[0059] Module 2 12 Figures 4 to 8 As shown in FIG. 1 , the second module 12 is opposed to the first module 11 in the thickness direction DT. Furthermore, the second module 12 has an O2 terminal 210, a third semiconductor element 211, a fifth lead frame 221, a sixth lead frame 222, and a third lead terminal 231. In addition, the second module 12 has a fourth semiconductor element 212, a seventh lead frame 223, an eighth lead frame 224, a fourth lead terminal 232, an N1 terminal 240, an N2 terminal 250, and a second sealing portion 260.

[0060] The O2 terminal 210 corresponds to the fourth terminal and is connected to the O1 terminal 140 via a bolt and a nut (not shown). Thus, the first module 11 and the second module 12 are connected. Figure 5As shown, the O2 terminal 210 is formed of metal into a plate shape extending in one direction Da. In addition, the O2 terminal 210 and the O1 terminal 140 are opposed to each other in the thickness direction DT. When the O2 terminal 210 is projected in the thickness direction DT, the projected O2 terminal 210 and the O1 terminal 140 overlap.

[0061] The third semiconductor element 211 is opposed to the second semiconductor element 112 in the thickness direction DT. Furthermore, when the third semiconductor element 211 is projected in the thickness direction DT, the projected third semiconductor element 211 overlaps the second semiconductor element 112. In addition, the third semiconductor element 211 corresponds to a third element, and includes a third transistor 271, a third bonding wire 281, and a third diode 291.

[0062] The third transistor 271 is, for example, a MOSFET using Si or SiC. In addition, the withstand voltage of the third transistor 271 is set to be 0.5 or more and less than 1.0 of the withstand voltage of the first transistor 171, and is set to be 0.5 or more and less than 1.0 of the withstand voltage of the second transistor 172. Figure 1 As shown in the figure, it has a third drain electrode 2711, a third source electrode 2712 and a third gate electrode 2713.

[0063] The third drain electrode 2711 is equivalent to the fifth electrode. Figure 5 As shown in FIG. 1 , the fifth lead frame 221 is connected to the fifth lead frame 221 via solder or the like. In addition, the fifth lead frame 221 is connected to the O2 terminal 210 via solder or the like. Therefore, the third drain electrode 2711 is connected to the O2 terminal 210 via the fifth lead frame 221 or the like. In addition, the fifth lead frame 221 has a function as a heat spreader in addition to the function of a connecting member.

[0064] The third source electrode 2712 corresponds to the sixth electrode, and is connected to the sixth lead frame 222 via solder, a copper spacer, etc. The sixth lead frame 222 has a function as a heat spreader in addition to the function of a connection member.

[0065] The third gate electrode 2713 is connected to the third lead terminal 231 via a pad and a third bonding wire 281. The third lead terminal 231 is connected to a driving circuit. The third gate electrode 2713 allows a current to flow between the third drain electrode 2711 and the third source electrode 2712 based on a voltage applied from the driving circuit to the third gate electrode 2713.

[0066] Back to Figure 1The third diode 291 is, for example, a Zener diode. The cathode of the third diode 291 is connected to the third drain electrode 2711 and the fifth lead frame 221. The anode of the third diode 291 is connected to the third source electrode 2712 and the sixth lead frame 222. Thus, the third diode 291 is connected in parallel with the third transistor 271.

[0067] The fourth semiconductor element 212 is Figure 4 As shown in FIG. 1 , the fourth semiconductor element 212 is opposed to the first semiconductor element 111 in the thickness direction DT. When the fourth semiconductor element 212 is projected in the thickness direction DT, the projected fourth semiconductor element 212 overlaps the first semiconductor element 111. Furthermore, the fourth semiconductor element 212 corresponds to a fourth element, and includes a fourth transistor 272, a fourth bonding wire 282, and a fourth diode 292.

[0068] The fourth transistor 272 is, for example, a MOSFET using Si or SiC. In addition, the withstand voltage of the fourth transistor 272 is set to be 0.5 or more and less than 1.0 of the withstand voltage of the first transistor 171, and is set to be 0.5 or more and less than 1.0 of the withstand voltage of the second transistor 172. Figure 1 As shown in the figure, it has a fourth drain electrode 2721, a fourth source electrode 2722 and a fourth gate electrode 2723.

[0069] The fourth drain electrode 2721 is equivalent to the seventh electrode. Figure 4 As shown in FIG. 1 , the seventh lead frame 223 is connected to the seventh lead frame 223 via solder or the like. In addition to the function of the connection member, the seventh lead frame 223 also functions as a heat spreader.

[0070] The fourth source electrode 2722 corresponds to the eighth electrode and is connected to the eighth lead frame 224 via solder and a copper spacer. Figure 6 As shown in FIG. 1 , the fourth source electrode 2722 is connected to the sixth lead frame 222 via a wiring layer or the like. Since the sixth lead frame 222 is connected to the third source electrode 2712, the fourth source electrode 2722 is connected to the third source electrode 2712 via the eighth lead frame 224 and the sixth lead frame 222 or the like. In addition to the function of a connecting member, the eighth lead frame 224 also has a function as a heat spreader.

[0071] The fourth gate electrode 2723 is as follows Figure 4 As shown in FIG. 2 , the fourth gate electrode 2723 is connected to the fourth drain electrode 2721 and the fourth source electrode 2722 via a pad and a fourth bonding wire 282. The fourth lead terminal 232 is connected to a driving circuit. The fourth gate electrode 2723 allows a current to flow between the fourth drain electrode 2721 and the fourth source electrode 2722 based on a voltage applied from the driving circuit to the fourth gate electrode 2723.

[0072] Back to Figure 1 The fourth diode 292 is, for example, a Zener diode. The cathode of the fourth diode 292 is connected to the fourth drain electrode 2721 and the seventh lead frame 223. The anode of the fourth diode 292 is connected to the fourth source electrode 2722 and the eighth lead frame 224. Thus, the fourth diode 292 is connected in parallel with the fourth transistor 272.

[0073] N1 terminal 240 is equivalent to the 5th terminal, such as Figure 4 As shown in FIG. 1 , the N1 terminal 240 is connected to the seventh lead frame 223 via solder or the like. In addition, since the seventh lead frame 223 is connected to the fourth drain electrode 2721, the N1 terminal 240 is connected to the fourth drain electrode 2721 via the seventh lead frame 223. Furthermore, the N1 terminal 240 is formed of metal into a plate shape extending in one direction Da. In addition, the N1 terminal 240 and the P terminal 110 are opposite to each other in the thickness direction DT. Furthermore, when the N1 terminal 240 is projected in the thickness direction DT, the projected N1 terminal 240 overlaps with the P terminal 110.

[0074] N2 terminal 250 is equivalent to the 6th terminal, such as Figure 7 and Fig. 9 As shown, the N2 terminal 250 is connected to the 7th lead frame 223 via a wiring layer, solder, copper spacers, etc. Since the 7th lead frame 223 is connected to the 4th drain electrode 2721, the N2 terminal 250 is connected to the 4th drain electrode 2721 via the 7th lead frame 223, etc. Furthermore, the N2 terminal 250 is formed of metal into a plate shape extending in one direction Da. In addition, the N2 terminal 250 and the N terminal 150 are opposite to each other in the thickness direction DT. Furthermore, when the N2 terminal 250 is projected in the thickness direction DT, the projected N2 terminal 250 overlaps with the N terminal 150. In addition, as shown in FIG. Fig. 9 and Fig.10 As shown, the N2 terminal 250 is arranged with a gap between the O2 terminal 210 and the N1 terminal 240 in a direction perpendicular to the one direction Da and the thickness direction DT.

[0075] The second sealing portion 260 is formed of a resin or the like. Furthermore, the second sealing portion 260 covers the third semiconductor element 211 and the fourth semiconductor element 212. In addition, the second sealing portion 260 covers the fifth lead frame 221 and the sixth lead frame 222 in such a manner that a portion of the fifth lead frame 221 and the sixth lead frame 222 is exposed from the second sealing portion 260. Furthermore, the second sealing portion 260 covers the seventh lead frame 223 and the eighth lead frame 224 in such a manner that a portion of the seventh lead frame 223 and the eighth lead frame 224 is exposed from the second sealing portion 260. In addition, the second sealing portion 260 covers a portion of the third lead terminal 231 in such a manner that the third lead terminal 231 protrudes from the second sealing portion 260. Furthermore, the second sealing portion 260 covers a portion of the fourth lead terminal 232 in such a manner that the fourth lead terminal 232 protrudes from the second sealing portion 260. In addition, the second sealing portion 260 covers a portion of the O2 terminal 210 in a manner that the O2 terminal 210 protrudes from the second sealing portion 260. Furthermore, the second sealing portion 260 covers a portion of the N1 terminal 240 in a manner that the N1 terminal 240 protrudes from the second sealing portion 260. In addition, the second sealing portion 260 covers a portion of the N2 terminal 250 in a manner that the N2 terminal 250 protrudes from the second sealing portion 260.

[0076] Therefore, if Figure 4 , Figure 5 and Figure 8 to Figure 10 As shown, the O2 terminal 210 has a fourth protrusion 2100 protruding from the second sealing portion 260. The N1 terminal 240 has a fifth protrusion 2400 protruding from the second sealing portion 260. The N2 terminal 250 has a sixth protrusion 2500 protruding from the second sealing portion 260.

[0077] Here, if Figure 4 , Figure 5 and Figure 8 As shown, a plane passing through the center of the first sealing portion 160 in the thickness direction DT and perpendicular to the thickness direction DT is defined as a first center plane So1. Furthermore, a plane passing through the center of the second sealing portion 260 in the thickness direction DT and perpendicular to the thickness direction DT is defined as a second center plane So2.

[0078] Furthermore, the first protrusion 1100 is closer to the fifth protrusion 2400 side than the first center plane So1. The second protrusion 1400 is closer to the fourth protrusion 2100 side than the first center plane So1. The third protrusion 1500 is closer to the sixth protrusion 2500 side than the first center plane So1. The fourth protrusion 2100 is closer to the second protrusion 1400 side than the second center plane So2. The fifth protrusion 2400 is closer to the first protrusion 1100 side than the second center plane So2. The sixth protrusion 2500 is closer to the third protrusion 1500 side than the second center plane So2.

[0079] In addition, the outer shape of the second module 12 is the same as the outer shape of the first module 11. For example, the outer shape of the first protrusion 1100 is the same as the outer shape of the fifth protrusion 2400. The outer shape of the second protrusion 1400 is the same as the outer shape of the fourth protrusion 2100. The outer shape of the third protrusion 1500 is the same as the outer shape of the sixth protrusion 2500. The outer shapes of the first lead terminal 131 and the second lead terminal 132 protruding from the first sealing portion 160 are the same as the outer shapes of the third lead terminal 231 and the fourth lead terminal 232 protruding from the second sealing portion 260. The outer shape of the first sealing portion 160 is the same as the outer shape of the second sealing portion 260. In addition, here, "the same" includes the manufacturing error range.

[0080] The first extension portion 31 is as follows Fig.11 and Fig.12 As shown in FIG. 1 , the first extension portion 31 is connected to the P terminal 110 via a bolt or the like. Furthermore, the first extension portion 31 is formed of metal in a plate shape extending in one direction Da from the P terminal 110. In addition, a portion of the first extension portion 31 is bent. Furthermore, the first extension portion 31 is connected to one end of a power source not shown.

[0081] The second extension portion 32 is connected to the N terminal 150 via a bolt or the like. The second extension portion 32 is formed of metal in a plate shape extending in one direction Da from the N terminal 150. A portion of the second extension portion 32 is bent. The second extension portion 32 is connected to the other end of the power source.

[0082] The third extension portion 33 is connected to the N1 terminal 240 and the N2 terminal 250 via bolts or the like. The third extension portion 33 is formed of metal in a plate shape extending in one direction Da from the N1 terminal 240 and the N2 terminal 250. In addition, a portion of the third extension portion 33 is bent.

[0083] The first capacitor 41 is formed by metal spraying, etc. Furthermore, the first capacitor 41 is sandwiched between the first extension portion 31 and the third extension portion 33. Furthermore, the first capacitor 41 is connected to the first extension portion 31 and the third extension portion 33.

[0084] The second capacitor 42 is formed by metal spraying or the like. Furthermore, the second capacitor 42 is sandwiched by the second extension portion 32 and the third extension portion 33. In addition, the second capacitor 42 is connected to the second extension portion 32 and the third extension portion 33. Furthermore, a portion of the first extension portion 31, a portion of the second extension portion 32, a portion of the third extension portion 33, the first capacitor 41, and the second capacitor 42 are covered with a resin or the like.

[0085] The semiconductor module 10 of the first embodiment is configured as described above. Next, the operation of the semiconductor module 10 will be described.

[0086] The voltage applied to the first gate electrode 1713 from the drive circuit via the first lead terminal 131 and the like and the voltage applied to the second gate electrode 1723 from the drive circuit via the second lead terminal 132 and the like are controlled by a control device (not shown). Thus, the first semiconductor element 111 and the second semiconductor element 112 are controlled to be on and off. In addition, the voltage applied to the third gate electrode 2713 from the drive circuit via the third lead terminal 231 and the like and the voltage applied to the fourth gate electrode 2723 from the drive circuit via the fourth lead terminal 232 and the like are controlled by the control device. Thus, the third semiconductor element 211 and the fourth semiconductor element 212 are controlled to be on and off. Therefore, the current corresponding to the on and off of the first semiconductor element 111, the second semiconductor element 112, the third semiconductor element 211 and the fourth semiconductor element 212 is output from the O1 terminal 140 to the motor. Thus, the motor is controlled.

[0087] In addition, according to the on and off of the first semiconductor element 111, the second semiconductor element 112, the third semiconductor element 211 and the fourth semiconductor element 212, as shown in FIG. Figure 13 to Figure 16 As shown, a first commutation path Cp1, a second commutation path Cp2, a third commutation path Cp3, and a fourth commutation path Cp4 are formed. In addition, here, the commutation path is a path of displacement current dI / dt when the current path is switched by turning on and off the first semiconductor element 111, the second semiconductor element 112, the third semiconductor element 211, and the fourth semiconductor element 212.

[0088] Furthermore, in the first commutation path Cp1, Fig.13 As shown, the displacement current dI / dt passes through the eighth lead frame 224 via the first capacitor 41, the third extension portion 33, the N1 terminal 240, the seventh lead frame 223, and the fourth transistor 272. The displacement current dI / dt passing through the eighth lead frame 224 passes through the O1 terminal 140 via the sixth lead frame 222, the third diode 291, the fifth lead frame 221, and the O2 terminal 210. The displacement current dI / dt passing through the O1 terminal 140 passes through the first capacitor 41 via the third lead frame 123, the second lead frame 122, the first transistor 171, the first lead frame 121, the P terminal 110, and the first extension portion 31.

[0089] In the first commutation path Cp1, Fig.17As shown, the displacement current dI / dt passes through the third lead frame 123 via the O1 terminal 140. The displacement current dI / dt after passing through the third lead frame 123 passes through the first lead frame 121 via the second lead frame 122, the first source electrode 1712, and the first drain electrode 1711. The displacement current dI / dt after passing through the first lead frame 121 passes through the P terminal 110. In this case, the current path direction in the P terminal 110 is the one direction Da. In addition, the current path direction in the O1 terminal 140 is the opposite direction of the one direction Da.

[0090] In addition, in the first commutation path Cp1, Fig.18 As shown, the displacement current dI / dt passes through the seventh lead frame 223 via the N1 terminal 240. The displacement current dI / dt after passing through the seventh lead frame 223 passes through the fifth lead frame 221 via the fourth drain electrode 2721, the fourth source electrode 2722, the eighth lead frame 224, the sixth lead frame 222 and the third diode 291. The displacement current dI / dt after passing through the fifth lead frame 221 passes through the O2 terminal 210. In this case, the current path direction in the N1 terminal 240 is the opposite direction of the one direction Da. In addition, the current path direction in the O2 terminal 210 is the one direction Da.

[0091] Therefore, the current path direction in the P terminal 110 that is opposite to the N1 terminal 240 in the thickness direction DT is the opposite direction of the current path direction in the N1 terminal 240. In addition, the current path direction in the O1 terminal 140 that is opposite to the O2 terminal 210 in the thickness direction DT is the opposite direction of the current path direction in the O2 terminal 210. As a result, the current path direction in the first module 11 is the opposite direction of the current path direction in the second module 12.

[0092] In the second commutation path Cp2, Fig.14 As shown, the displacement current dI / dt passes through the eighth lead frame 224 via the O2 terminal 210, the fifth lead frame 221, the third diode 291, and the sixth lead frame 222. The displacement current dI / dt passing through the eighth lead frame 224 passes through the N terminal 150 via the fourth transistor 272, the seventh lead frame 223, the N2 terminal 250, the third extension portion 33, the second capacitor 42, and the second extension portion 32. The displacement current dI / dt passing through the N terminal 150 passes through the O2 terminal 210 via the fourth lead frame 124, the second transistor 172, the third lead frame 123, and the O1 terminal 140.

[0093] In the second commutation path Cp2, Fig.19As shown, the displacement current dI / dt passes through the third lead frame 123 via the N terminal 150, the fourth lead frame 124, the second source electrode 1722, and the second drain electrode 1721. The displacement current dI / dt after passing through the third lead frame 123 passes through the O1 terminal 140. In this case, the current path direction in the N terminal 150 is the opposite direction of the one direction Da. In addition, the current path direction in the O1 terminal 140 is the one direction Da.

[0094] In addition, in the second commutation path Cp2, as Fig. 20 As shown, the displacement current dI / dt passes through the fifth lead frame 221 via the O2 terminal 210. The displacement current dI / dt after passing through the fifth lead frame 221 passes through the seventh lead frame 223 via the third diode 291, the sixth lead frame 222, the eighth lead frame 224, the fourth source electrode 2722, and the fourth drain electrode 2721. The displacement current dI / dt after passing through the seventh lead frame 223 passes through the N2 terminal 250. In this case, the current path direction in the N2 terminal 250 is the one direction Da. In addition, the current path direction in the O2 terminal 210 is the opposite direction of the one direction Da.

[0095] Therefore, the current path direction in the N terminal 150 that is opposite to the N2 terminal 250 in the thickness direction DT becomes the opposite direction of the current path direction in the N2 terminal 250. In addition, the current path direction in the O1 terminal 140 that is opposite to the O2 terminal 210 in the thickness direction DT becomes the opposite direction of the current path direction in the O2 terminal 210. Thus, the current path direction in the first module 11 becomes the opposite direction of the current path direction in the second module 12.

[0096] In the third commutation path Cp3, Fig.15 As shown in FIG. 1 , the displacement current dI / dt passes through the P terminal 110 via the O1 terminal 140, the third lead frame 123, the second lead frame 122, the first transistor 171, and the first lead frame 121. The displacement current dI / dt passing through the P terminal 110 passes through the first capacitor 41 via the first extension portion 31. The displacement current dI / dt passing through the first capacitor 41 passes through the eighth lead frame 224 via the third extension portion 33, the N1 terminal 240, the seventh lead frame 223, and the fourth diode 292. The displacement current dI / dt passing through the eighth lead frame 224 passes through the O1 terminal 140 via the sixth lead frame 222, the third transistor 271, the fifth lead frame 221, and the O2 terminal 210.

[0097] In the third commutation path Cp3, Fig.17As shown, the displacement current dI / dt passes through the third lead frame 123 via the O1 terminal 140. The displacement current dI / dt after passing through the third lead frame 123 passes through the first lead frame 121 via the second lead frame 122, the first source electrode 1712, and the first drain electrode 1711. The displacement current dI / dt after passing through the first lead frame 121 passes through the P terminal 110. In this case, the current path direction in the P terminal 110 is the one direction Da. In addition, the current path direction in the O1 terminal 140 is the opposite direction of the one direction Da.

[0098] In addition, in the third commutation path Cp3, as Fig.18 As shown, the displacement current dI / dt passes through the seventh lead frame 223 via the N1 terminal 240. The displacement current dI / dt after passing through the seventh lead frame 223 passes through the fifth lead frame 221 via the fourth diode 292, the eighth lead frame 224, the sixth lead frame 222, the third source electrode 2712 and the third drain electrode 2711. The displacement current dI / dt after passing through the fifth lead frame 221 passes through the O2 terminal 210. In this case, the current path direction in the N1 terminal 240 is the opposite direction of the one direction Da. In addition, the current path direction in the O2 terminal 210 is the one direction Da.

[0099] Therefore, the current path direction in the P terminal 110 that is opposite to the N1 terminal 240 in the thickness direction DT is the opposite direction of the current path direction in the N1 terminal 240. In addition, the current path direction in the O1 terminal 140 that is opposite to the O2 terminal 210 in the thickness direction DT is the opposite direction of the current path direction in the O2 terminal 210. As a result, the current path direction in the first module 11 is the opposite direction of the current path direction in the second module 12.

[0100] In the fourth commutation path Cp4, Fig.16 As shown, the displacement current dI / dt passes through the N terminal 150 via the second capacitor 42 and the second extension portion 32. The displacement current dI / dt after passing through the N terminal 150 passes through the O2 terminal 210 via the fourth lead frame 124, the second transistor 172, the third lead frame 123, and the O1 terminal 140. The displacement current dI / dt after passing through the O2 terminal 210 passes through the eighth lead frame 224 via the fifth lead frame 221, the third transistor 271, and the sixth lead frame 222. The displacement current dI / dt after passing through the eighth lead frame 224 passes through the second capacitor 42 via the fourth diode 292, the seventh lead frame 223, the N2 terminal 250, and the third extension portion 33.

[0101] In the fourth commutation path Cp4, Fig.19As shown in FIG. 1 , the displacement current dI / dt passes through the N terminal 150, and then passes through the third lead frame 123 via the fourth lead frame 124, the second source electrode 1722, and the second drain electrode 1721. The displacement current dI / dt after passing through the third lead frame 123 passes through the O1 terminal 140. In this case, the current path direction in the O1 terminal 140 is the one direction Da. Furthermore, the current path direction in the N terminal 150 is the opposite direction of the one direction Da.

[0102] In addition, in the fourth commutation path Cp4, as Fig. 20 As shown, the displacement current dI / dt passes through the fifth lead frame 221 via the O2 terminal 210. The displacement current dI / dt after passing through the fifth lead frame 221 passes through the seventh lead frame 223 via the third drain electrode 2711, the third source electrode 2712, the sixth lead frame 222, the eighth lead frame 224 and the fourth diode 292. The displacement current dI / dt after passing through the seventh lead frame 223 passes through the N2 terminal 250. In this case, the current path direction in the O2 terminal 210 is the opposite direction of the one direction Da. In addition, the current path direction in the N2 terminal 250 is the one direction Da.

[0103] Therefore, the current path direction in the N terminal 150 that is opposite to the N2 terminal 250 in the thickness direction DT becomes the opposite direction of the current path direction in the N2 terminal 250. In addition, the current path direction in the O1 terminal 140 that is opposite to the O2 terminal 210 in the thickness direction DT becomes the opposite direction of the current path direction in the O2 terminal 210. Thus, the current path direction in the first module 11 becomes the opposite direction of the current path direction in the second module 12.

[0104] The semiconductor module 10 operates as described above. Next, suppression of increase in inductance in the semiconductor module 10 will be described.

[0105] In the semiconductor module 10, the O1 terminal 140 is connected to the O2 terminal 210, so that the first module 11 is connected to the second module 12. In addition, the first module 11 and the second module 12 are opposed to each other in the thickness direction DT. Furthermore, the current path direction in the first module 11 becomes the opposite direction of the current path direction in the second module 12. For example, the P terminal 110 and the N1 terminal 240 are opposed to each other in the thickness direction DT. The current path direction in the P terminal 110 becomes the opposite direction of the current path direction in the N1 terminal 240. The O1 terminal 140 and the O2 terminal 210 are opposed to each other in the thickness direction DT. The current path direction in the O1 terminal 140 becomes the opposite direction of the current path direction in the O2 terminal 210. The N terminal 150 and the N2 terminal 250 are opposed to each other in the thickness direction DT. The current path direction in the N terminal 150 becomes the opposite direction of the current path direction in the N2 terminal 250.

[0106] As a result, a portion is generated where the magnetic field caused by the current flowing through the first module 11 and the second module 12 is oriented in different directions. Therefore, the first module 11 and the second module 12 cancel each other's magnetic fields. Therefore, the increase in inductance in the first module 11 and the second module 12 is suppressed. As a result, the increase in inductance of the semiconductor module 10 is suppressed. Furthermore, since the increase in inductance of the semiconductor module 10 is suppressed, the increase in surge voltage generated in the semiconductor module 10 is suppressed. As a result, the failure and damage of the first semiconductor element 111, the second semiconductor element 112, the third semiconductor element 211, and the fourth semiconductor element 212 are suppressed.

[0107] Furthermore, according to the semiconductor module 10 of the first embodiment, the following effects are also achieved.

[0108] [1-1] The first protrusion 1100 is as follows Figure 4 As shown, the fifth protrusion 2400 is located closer to the fifth protrusion 2400 than the first center plane So1. The fifth protrusion 2400 is located closer to the first protrusion 1100 than the second center plane So2.

[0109] As a result, the first protrusion 1100 and the fifth protrusion 2400 are close to each other. Therefore, the first protrusion 1100 and the fifth protrusion 2400 are more likely to cancel each other's magnetic fields. Therefore, the increase in the inductance of the first protrusion 1100 and the fifth protrusion 2400 is suppressed.

[0110] In addition, the second protrusion 1400 is Figure 5 As shown, the fourth protrusion 2100 is located closer to the fourth protrusion 2100 than the first center plane So1. The fourth protrusion 2100 is located closer to the second protrusion 1400 than the second center plane So2.

[0111] As a result, the second protrusion 1400 and the fourth protrusion 2100 are close to each other. Therefore, the second protrusion 1400 and the fourth protrusion 2100 are more likely to cancel each other's magnetic fields. As a result, the increase in the inductance of the second protrusion 1400 and the fourth protrusion 2100 is suppressed.

[0112] Furthermore, the third protrusion 1500 is as follows Figure 8 As shown, the sixth protrusion 2500 is located on the side of the sixth protrusion 2500 rather than the first center plane So1. The sixth protrusion 2500 is located on the side of the third protrusion 1500 rather than the second center plane So2.

[0113] As a result, the third protrusion 1500 and the sixth protrusion 2500 are close to each other. Therefore, the third protrusion 1500 and the sixth protrusion 2500 are easy to cancel each other's magnetic field. Therefore, the increase of the inductance of the third protrusion 1500 and the sixth protrusion 2500 is suppressed. As a result, the increase of the inductance of the semiconductor module 10 is suppressed.

[0114] [1-2] The outer shape of the first module 11 is the same as the outer shape of the second module 12. For example, the outer shape of the first protrusion 1100 is the same as the outer shape of the fifth protrusion 2400. The outer shape of the second protrusion 1400 is the same as the outer shape of the fourth protrusion 2100. The outer shape of the third protrusion 1500 is the same as the outer shape of the sixth protrusion 2500. The outer shapes of the first lead terminal 131 and the second lead terminal 132 protruding from the first sealing portion 160 are the same as the outer shapes of the third lead terminal 231 and the fourth lead terminal 232 protruding from the second sealing portion 260. The outer shape of the first sealing portion 160 is the same as the outer shape of the second sealing portion 260.

[0115] Thus, for example, the first module 11 and the second module 12 can be molded using the same mold. Therefore, the semiconductor module 10 can be manufactured more easily than when the outer shape of the first module 11 and the outer shape of the second module 12 are different.

[0116] [1-3] Here, the voltage applied to the third semiconductor element 211 and the fourth semiconductor element 212 is lower than the voltage applied to the first semiconductor element 111 and the second semiconductor element 112. However, the time for the current to flow through the third semiconductor element 211 and the fourth semiconductor element 212 is longer than the time for the current to flow through the first semiconductor element 111 and the second semiconductor element 112. Therefore, the third semiconductor element 211 and the fourth semiconductor element 212 are more likely to generate heat.

[0117] In contrast, in the semiconductor module 10, the withstand voltage of the third transistor 271 in the third semiconductor element 211 is set to be 0.5 or more and less than 1.0 of the withstand voltage of the first transistor 171 in the first semiconductor element 111. In addition, the withstand voltage of the third transistor 271 is set to be 0.5 or more and less than 1.0 of the withstand voltage of the second transistor 172 in the second semiconductor element 112. Furthermore, the withstand voltage of the fourth transistor 272 in the fourth semiconductor element 212 is set to be 0.5 or more and less than 1.0 of the withstand voltage of the first transistor 171. In addition, the withstand voltage of the fourth transistor 272 is set to be 0.5 or more and less than 1.0 of the withstand voltage of the second transistor 172.

[0118] Thus, the on-resistance of the third semiconductor element 211 and the fourth semiconductor element 212 is smaller than the on-resistance of the first semiconductor element 111 and the second semiconductor element 112. Therefore, the heat generated by the third semiconductor element 211 and the fourth semiconductor element 212 is relatively small. Therefore, the failure and damage of the third semiconductor element 211 and the fourth semiconductor element 212 are suppressed.

[0119] [1-4] The semiconductor module 10 is as follows Fig.11 and Fig.12As shown in the figure, the first extension portion 31, the second extension portion 32, the third extension portion 33, the first capacitor 41 and the second capacitor 42 are provided. The first extension portion 31 is connected to the P terminal 110 and extends in one direction Da. The second extension portion 32 is connected to the N terminal 150 and extends in one direction Da. The third extension portion 33 is connected to the N1 terminal 240 and the N2 terminal 250 and extends in one direction Da. The first capacitor 41 is sandwiched between the first extension portion 31 and the third extension portion 33 and is connected to the first extension portion 31 and the third extension portion 33. The second capacitor 42 is sandwiched between the second extension portion 32 and the third extension portion 33 and is connected to the second extension portion 32 and the third extension portion 33.

[0120] As a result, the direction of the current path between the P terminal 110 and the first capacitor 41 becomes the opposite direction of the current path between the N1 terminal 240 and the first capacitor 41. Therefore, the direction of the magnetic field caused by the current flowing between the P terminal 110 and the first capacitor 41 becomes the opposite direction of the direction of the magnetic field caused by the current flowing between the N1 terminal 240 and the first capacitor 41. Therefore, the magnetic fields between the P terminal 110 and the first capacitor 41 and between the N1 terminal 240 and the first capacitor 41 cancel each other. As a result, the increase of the inductance between the P terminal 110 and the first capacitor 41 and between the N1 terminal 240 and the first capacitor 41 is suppressed.

[0121] In addition, the direction of the current path between the N terminal 150 and the second capacitor 42 is opposite to the direction of the current path between the N2 terminal 250 and the second capacitor 42. Therefore, the direction of the magnetic field caused by the current flowing between the N terminal 150 and the second capacitor 42 is opposite to the direction of the magnetic field caused by the current flowing between the N2 terminal 250 and the second capacitor 42. Therefore, the magnetic fields between the N terminal 150 and the second capacitor 42 and between the N2 terminal 250 and the second capacitor 42 cancel each other. As a result, the increase in inductance between the N terminal 150 and the second capacitor 42 and between the N2 terminal 250 and the second capacitor 42 is suppressed. Therefore, the increase in inductance of the semiconductor module 10 is suppressed.

[0122] (Second embodiment)

[0123] In the second embodiment, the forms of the first lead frame 121, the second lead frame 122, the third lead frame 123, and the fourth lead frame 124 are different from those in the first embodiment. In addition, the forms of the fifth lead frame 221, the sixth lead frame 222, the seventh lead frame 223, and the eighth lead frame 224 are different from those in the first embodiment. Other than this, the present invention is the same as the first embodiment.

[0124] In addition, here, Fig.21As shown in FIG. 1 , the area of ​​the first lead frame 121 exposed from the first sealing portion 160 is set as the first area S1. The area of ​​the third lead frame 123 exposed from the first sealing portion 160 is set as the third area S3. Fig. 22 As shown in FIG. 1 , the area of ​​the second lead frame 122 exposed from the first sealing portion 160 is set as the second area S2. The area of ​​the fourth lead frame 124 exposed from the first sealing portion 160 is set as the fourth area S4. Fig.23 As shown in FIG. 1 , the area of ​​the fifth lead frame 221 exposed from the second sealing portion 260 is set as the fifth area S5. The area of ​​the seventh lead frame 223 exposed from the second sealing portion 260 is set as the seventh area S7. Fig.24 As shown in FIG. 1 , the area of ​​the sixth lead frame 222 exposed from the second sealing portion 260 is referred to as a sixth area S6. The area of ​​the eighth lead frame 224 exposed from the second sealing portion 260 is referred to as an eighth area S8.

[0125] Furthermore, the fifth area S5 is larger than the first area S1, the second area S2, the third area S3, and the fourth area S4. That is, S5>S1, S5>S2, S5>S3, S5>S4. The sixth area S6 is larger than the first area S1, the second area S2, the third area S3, and the fourth area S4. That is, S6>S1, S6>S2, S6>S3, S6>S4. The seventh area S7 is larger than the first area S1, the second area S2, the third area S3, and the fourth area S4. That is, S7>S1, S7>S2, S7>S3, S7>S4. The eighth area S8 is larger than the first area S1, the second area S2, the third area S3, and the fourth area S4. That is, S8>S1, S8>S2, S8>S3, S8>S4.

[0126] The semiconductor module 10 of the second embodiment is configured as described above. The second embodiment also achieves the same effects as those of the first embodiment. In addition, the second embodiment also achieves the following effects.

[0127] [2] Here, as described above, the third semiconductor element 211 and the fourth semiconductor element 212 are relatively likely to generate heat.

[0128] On the other hand, in the semiconductor module 10 of the second embodiment, the fifth area S5 , the sixth area S6 , the seventh area S7 , and the eighth area S8 are all larger than any of the first area S1 , the second area S2 , the third area S3 , and the fourth area S4 .

[0129] Thus, compared with the case where the first to eighth areas S1 to S8 are the same, the fifth lead frame 221, the sixth lead frame 222, the seventh lead frame 223, and the eighth lead frame 224 are easy to dissipate heat. Therefore, the temperature rise of the third semiconductor element 211 and the fourth semiconductor element 212 is suppressed. Therefore, the failure and damage of the third semiconductor element 211 and the fourth semiconductor element 212 are suppressed.

[0130] (Other embodiments)

[0131] The present disclosure is not limited to the above-described embodiments, and the above-described embodiments can be appropriately modified. In addition, in the above-described embodiments, elements constituting the embodiments are not necessarily essential unless they are specifically stated to be essential or are clearly considered to be essential in principle.

[0132] In the above-mentioned embodiments, the first transistor 171, the second transistor 172, the third transistor 271 and the fourth transistor 272 are MOSFETs, but are not limited thereto. The first transistor 171, the second transistor 172, the third transistor 271 and the fourth transistor 272 may also be IGBTs, etc. In addition, IGBT is the abbreviation of Insulated Gate Bipolar Transistor.

[0133] In the above embodiments, the first diode 191, the second diode 192, the third diode 291 and the fourth diode 292 are Zener diodes, but the present invention is not limited thereto and the first diode 191, the second diode 192, the third diode 291 and the fourth diode 292 may be rectifying diodes or the like.

[0134] In the above-mentioned embodiments, the sixth lead frame 222 and the eighth lead frame 224 are separate bodies. However, the sixth lead frame 222 and the eighth lead frame 224 may be integrated.

[0135] In each of the above-mentioned embodiments, the semiconductor module 10 is used in a three-level inverter, but the present invention is not limited thereto and the semiconductor module 10 may be used in a two-level inverter.

Claims

1. A semiconductor module, characterized in that: have: Module 1; and Module 2, The first module has: The first terminal extends in one direction; A first element including a first electrode connected to the first terminal, a second electrode, a first gate electrode that allows a current to flow between the first electrode and the second electrode based on an applied voltage, and a first diode connected to the first electrode and the second electrode; a second element including a third electrode connected to the second electrode, a fourth electrode, a second gate electrode for causing a current to flow between the third electrode and the fourth electrode based on an applied voltage, and a second diode connected to the third electrode and the fourth electrode; a second terminal connected to the third electrode and extending in the one direction and connected to a load; and The third terminal is connected to the fourth electrode and extends in the one direction. The second module has: a fourth terminal extending in the one direction and connected to the second terminal so as to connect the first module and the second module; a third element including a fifth electrode connected to the fourth terminal, a sixth electrode, a third gate electrode for causing a current to flow between the fifth electrode and the sixth electrode based on an applied voltage, and a third diode connected to the fifth electrode and the sixth electrode; a fourth element including a seventh electrode, an eighth electrode connected to the sixth electrode, a fourth gate electrode for causing a current to flow between the seventh electrode and the eighth electrode based on an applied voltage, and a fourth diode connected to the seventh electrode and the eighth electrode; a fifth terminal connected to the seventh electrode and extending in the one direction; and a sixth terminal connected to the seventh electrode and extending in the one direction; The first module is opposed to the second module in the thickness direction of the first module. The direction of the current path in the first module is opposite to the direction of the current path in the second module.

2. The semiconductor module according to claim 1, wherein: The first terminal and the fifth terminal are opposed to each other in the thickness direction. The direction of the current path in the first terminal is opposite to the direction of the current path in the fifth terminal. The second terminal and the fourth terminal are opposite to each other in the thickness direction. The current path direction in the second terminal is opposite to the current path direction in the fourth terminal. The third terminal and the sixth terminal are opposite to each other in the thickness direction. The direction of the current path in the third terminal is opposite to the direction of the current path in the sixth terminal.

3. The semiconductor module according to claim 2, characterized in that The first module includes a first sealing portion covering the first element, the second element, the first terminal, the second terminal, and the third terminal. The second module includes a second sealing portion covering the third element, the fourth element, the fourth terminal, the fifth terminal, and the sixth terminal. The first terminal includes a first protrusion protruding from the first sealing portion, The second terminal includes a second protrusion protruding from the first sealing portion, The third terminal includes a third protrusion protruding from the first sealing portion. The fourth terminal includes a fourth protrusion protruding from the second sealing portion, The fifth terminal includes a fifth protrusion protruding from the second sealing portion, The sixth terminal includes a sixth protrusion protruding from the second sealing portion, A plane passing through the center of the first sealing portion in the thickness direction and perpendicular to the thickness direction is defined as a first center plane. A plane passing through the center of the second sealing portion in the thickness direction and perpendicular to the thickness direction is defined as a second center plane. The first protrusion is closer to the fifth protrusion than the first center plane. The second protrusion is closer to the fourth protrusion than the first center plane. The third protrusion is closer to the sixth protrusion than the first center plane. The fourth protrusion is closer to the second protrusion than the second center plane. The fifth protrusion is closer to the first protrusion than the second center plane. The sixth protrusion is located closer to the third protrusion than the second center plane.

4. The semiconductor module according to any one of claims 1 to 3, wherein: The first module has: a first lead frame connected to the first electrode; a second lead frame connected to the second electrode; a third lead frame connected to the third electrode and the second lead frame; a fourth lead frame connected to the fourth electrode; and The first sealing portion covers the first element, the second element, the first terminal, the second terminal, the third terminal, the first lead frame, the second lead frame, the third lead frame, and the fourth lead frame. The second module has: a fifth lead frame connected to the fifth electrode and the fourth terminal; a sixth lead frame connected to the sixth electrode; a seventh lead frame connected to the seventh electrode; an eighth lead frame connected to the eighth electrode and the sixth lead frame; and The second sealing portion covers the third element, the fourth element, the fourth terminal, the fifth terminal, the sixth terminal, the fifth lead frame, the sixth lead frame, the seventh lead frame, and the eighth lead frame. At least a portion of the first lead frame, the second lead frame, the third lead frame, and the fourth lead frame is exposed from the first sealing portion, At least a portion of the fifth lead frame, the sixth lead frame, the seventh lead frame, and the eighth lead frame is exposed from the second sealing portion, Any one of the areas of the fifth lead frame, the sixth lead frame, the seventh lead frame and the eighth lead frame exposed from the second sealing portion is larger than any one of the areas of the first lead frame, the second lead frame, the third lead frame and the fourth lead frame exposed from the first sealing portion.

5. The semiconductor module according to any one of claims 1 to 3, wherein: The outer shape of the first module is the same as the outer shape of the second module.

6. The semiconductor module according to any one of claims 1 to 3, wherein: The withstand voltage of the third element and the fourth element is 0.5 or more and less than 1.0 of the withstand voltage of the first element, and is 0.5 or more and less than 1.0 of the withstand voltage of the second element.

7. The semiconductor module according to any one of claims 1 to 3, wherein: The semiconductor module has: a first extension portion connected to the first terminal and extending in the one direction; a second extension portion connected to the third terminal and extending in the one direction; a third extension portion connected to the fifth terminal and the sixth terminal and extending in the one direction; a first capacitor sandwiched by the first extension portion and the third extension portion and connected to the first extension portion and the third extension portion; and The second capacitor is sandwiched between the second extension portion and the third extension portion and is connected to the second extension portion and the third extension portion.

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