High-frequency module and communication device

Abstract

The invention relates to a high-frequency module and a communication device. In a high-frequency module, the size of the module can be reduced while the isolation between components is ensured. A high-frequency module (1) is provided with: a substrate (50) having a mounting surface (50a); transmission members (11, 18, 20) and a transmission / reception member (17) disposed on the mounting surface (50a); elastic wave filters (121-126) disposed between the transmission members (11, 18, 20) and the transmission / reception member (17); and shield electrodes (131-136) formed on the side surfaces of the elastic wave filters (121-126).

Description

Technical Field

[0001] The present disclosure relates to a high-frequency module and a communication device. Background Art

[0002] In U.S. Patent Publication No. 2018 / 0098418 (Patent Document 1), a high-frequency module is described in which a plurality of components are mounted on a substrate. In the high-frequency module, a shielding component is arranged between the components to reduce interference caused by mutual signals between the components. The shielding component functions as a shielding member by connecting at least one end to a ground electrode of the substrate.

[0003] Patent Document 1: U.S. Patent Publication No. 2018 / 0098418

[0004] In recent years, as communication devices equipped with high-frequency modules are miniaturized, high-frequency modules are also required to be miniaturized. As a result, there is a concern that the space for arranging a shielding component as described in Patent Document 1 will be reduced, and the isolation characteristics in the high-frequency module will deteriorate. Summary of the invention

[0005] The present disclosure has been made to solve the above-mentioned problems, and an object of the present disclosure is to achieve miniaturization of a high-frequency module while ensuring isolation between components.

[0006] The high-frequency module disclosed in the present invention comprises: a substrate having a mounting surface; a first component and a second component arranged on the mounting surface; a first elastic wave filter arranged between the first component and the second component on the mounting surface; and a first shielding electrode formed on at least one side surface of the first elastic wave filter. The first shielding electrode has a portion extending in a direction intersecting a virtual line connecting the first component and the second component.

[0007] According to the present disclosure, a first elastic wave filter is arranged between a first component and a second component, and a first shielding electrode is formed on the side of the first elastic wave filter. Thus, even if a component dedicated to shielding is not arranged, the first shielding electrode formed on the side of the first elastic wave filter can reduce the interference caused by the mutual signals between the first component and the second component. As a result, in a high-frequency module, the module can be miniaturized while ensuring isolation between components. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 This is a diagram schematically showing an example of a circuit configuration of a high-frequency module.

[0009] Figure 2 This is a plan view schematically showing an example of the internal structure of the high-frequency module (Part 1).

[0010] Figure 3This is a plan view schematically showing an example of the internal structure of the high-frequency module (part 2).

[0011] Figure 4 This is a plan view schematically showing an example of the internal structure of the high-frequency module (part 3).

[0012] Figure 5 This is a cross-sectional view schematically showing an example of the internal structure of the high-frequency module.

[0013] Figure 6 This is a plan view showing the bottom surface of the elastic wave filter (part 1).

[0014] Figure 7 This is a plan view showing the bottom surface of the elastic wave filter (part 2).

[0015] Figure 8 This is a top view showing the bottom surface of the elastic wave filter (part 3).

[0016] Fig. 9 FIG. 4 is a plan view schematically showing an example of the internal structure of the high-frequency module.

[0017] Fig.10 yes Fig. 9 XX section view in.

[0018] Fig.11 This is a plan view schematically showing an example of the internal structure of the high-frequency module (Part 5).

[0019] Fig.12 FIG. 6 is a plan view schematically showing an example of the internal structure of the high-frequency module.

[0020] Fig.13 FIG. 7 is a plan view schematically showing an example of the internal structure of the high-frequency module.

[0021] Fig.14 FIG. 8 is a plan view schematically showing an example of the internal structure of the high-frequency module.

[0022] Fig.15 FIG. 9 is a plan view schematically showing an example of the internal structure of the high-frequency module.

[0023] Fig.16 This is a plan view schematically showing a model example of a stacked structure of an elastic wave filter (Part 1).

[0024] Fig.17 This is a plan view schematically showing a model example of the stacked structure of the elastic wave filter (part 2).

[0025] Fig.18It is a plan view schematically showing an example of an electrode pattern on the lower surface (mounting surface) of the elastic wave filter.

[0026] Explanation of reference numerals: 1, 1A to 1R…high frequency module; 9…communication device; 10…external connection terminal; 11, 11A, 11B…power amplifier; 14, 14C, 14I…low noise amplifier; 15, 16…matching circuit; 15A, 15B, 16C…inductor; 17, 17I…antenna switch; 18…band selection switch; 19…binding switch; 20…power amplifier controller; 30…shielding dedicated component; 40A, 40B, 40C, 40D…input matching element group; 50…substrate; 50a…mounting surface; 60, 150…resin; 70…upper surface electrode; 80, 81, 82…transmitting component; 90…receiving component; 91…antenna; 92, 93…signal processing circuit; 100…antenna matching element ; 101…antenna terminal; 102…signal input terminal; 103…signal output terminal; 104…control terminal; 110…input matching circuit element group; 120, 120A~120F, 121~126…elastic wave filter; 130, 130A~130C, 131~136, 131A~136A, 131B~136B…shielding electrode; 130a~130f…connecting part; 140…electronic circuit; 141~146…strip bump; 141, 142…bump; 152, 153, 155~158, 162~165, G1…ground electrode; 151…input electrode; 154…output electrode; 161, 166…signal electrode; 201~206…wiring; W1, W2…wire. DETAILED DESCRIPTION

[0027] Hereinafter, the embodiment of the present disclosure will be described in detail with reference to the accompanying drawings. In addition, the same reference numerals are given to the same or corresponding parts in the drawings, and their description will not be repeated.

[0028] (Circuit structure of high-frequency module)

[0029] Figure 1 1 is a diagram schematically showing an example of a circuit configuration of the high-frequency module 1 according to the present embodiment.

[0030] The high-frequency module 1 is used, for example, in a communication device 9. The communication device 9 is, for example, a mobile phone such as a smartphone. In addition, the communication device 9 is not limited to a mobile phone, and may be, for example, a wearable terminal such as a smart watch. The high-frequency module 1 is, for example, a module that can correspond to the 4G (fourth generation mobile communication) standard, the 5G (fifth generation mobile communication) standard, and the like.

[0031] The communication device 9 performs communication in a plurality of communication frequency bands. More specifically, the communication device 9 performs transmission of transmission signals in a plurality of communication frequency bands and reception of reception signals in a plurality of communication frequency bands.

[0032] Part of the transmission signals and reception signals of multiple communication frequency bands are FDD (Frequency Division Duplex) signals. In addition, the transmission signals and reception signals of multiple communication frequency bands are not limited to FDD signals, and may also be TDD (Time Division Duplex) signals. FDD is a wireless communication technology that allocates different frequency bands for transmission and reception in wireless communication. TDD is a wireless communication technology that allocates the same frequency band for transmission and reception in wireless communication and performs transmission and reception in a switching manner at each time.

[0033] The high frequency module 1 includes: a power amplifier (PA) 11, a power amplifier controller (PAC) 20, a plurality of (three in the example shown) transmission elastic wave filters (SAW) 121 to 123, a plurality of (three in the example shown) reception elastic wave filters (SAW) 124 to 126, a low noise amplifier (LNA) 14, a matching circuit (L) 15 for transmission, a matching circuit (L) 16 for reception, an antenna switch (ASW) 17, a band selection switch (BSSW) 18 for transmission, and a bundling switch 19 for reception. In addition, the high frequency module 1 also includes a plurality of (four in the example shown) external connection terminals 10.

[0034] The power amplifier 11 is an amplifier that amplifies a transmission signal. The power amplifier 11 is provided between the signal input terminal 102 and the elastic wave filters 121 to 123 in a transmission path T1 connecting the antenna terminal 101 and the signal input terminal 102 described later. The power amplifier 11 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the power amplifier 11 is connected to an external circuit (for example, the signal processing circuit 92) via the signal input terminal 102. The output terminal of the power amplifier 11 is connected to the elastic wave filters 121 to 123. In addition, the output terminal of the power amplifier 11 may be directly or indirectly connected to the elastic wave filters 121 to 123. Figure 1 In the example of FIG. 1 , the output terminal of the power amplifier 11 is connected to the elastic wave filters 121 to 123 via the matching circuit 15 for transmission and the band selection switch 18 .

[0035] The power amplifier controller 20 controls the output of the power amplifier 11. The transmission elastic wave filters 121 to 123 are filters that allow transmission signals of different communication frequency bands to pass. The elastic wave filters 121 to 123 are provided between the power amplifier 11 and the antenna switch 17 in the transmission path T1. The elastic wave filters 121 to 123 allow transmission signals of the transmission frequency band of the corresponding communication frequency band to pass among the high frequency signals amplified by the power amplifier 11.

[0036] The receiving elastic wave filters 124 to 126 are filters that pass received signals of different communication frequency bands. The receiving elastic wave filters 124 to 126 are provided between the antenna switch 17 and the low noise amplifier 14 in the receiving path R1 connecting the antenna terminal 101 and the signal output terminal 103 described later. The receiving elastic wave filters 124 to 126 pass received signals of the receiving frequency band of the corresponding communication frequency band among the high frequency signals input from the antenna terminal 101.

[0037] The low noise amplifier 14 is an amplifier for amplifying a received signal with low noise. The low noise amplifier 14 is provided between the elastic wave filters 124 to 126 for reception in the reception path R1 and the signal output terminal 103. The low noise amplifier 14 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the low noise amplifier 14 is connected to the matching circuit 16 for reception. The output terminal of the low noise amplifier 14 is connected to an external circuit (for example, a signal processing circuit 92) via the signal output terminal 103.

[0038] The transmission matching circuit 15 is provided between the power amplifier 11 and the transmission elastic wave filters 121 to 123 in the transmission path T1. The transmission matching circuit 15 includes an inductor for achieving impedance matching between the power amplifier 11 and the transmission elastic wave filters 121 to 123.

[0039] The reception matching circuit 16 is provided between the reception elastic wave filters 124 to 126 and the low noise amplifier 14 in the reception path R1. The reception matching circuit 16 includes an inductor for achieving impedance matching between the reception elastic wave filters 124 to 126 and the low noise amplifier 14.

[0040] The antenna switch 17 switches the elastic wave filter connected to the antenna terminal 101 from the elastic wave filters 121 to 123 for transmission. In addition, the antenna switch 17 switches the elastic wave filter connected to the antenna terminal 101 from the elastic wave filters 124 to 126 for reception. The antenna switch 17 has a common terminal 171 and a plurality of (three in the example shown) selection terminals 172 to 174. The common terminal 171 is connected to the antenna terminal 101. The selection terminal 172 of the plurality of selection terminals 172 to 174 is connected to the elastic wave filters 121 and 124, the selection terminal 173 is connected to the elastic wave filters 122 and 125, and the selection terminal 174 is connected to the elastic wave filters 123 and 126. The antenna switch 17 electrically connects the common terminal 171 to any one of the plurality of selection terminals 172 to 174, for example, based on a control signal from the RF signal processing circuit 93 of the signal processing circuit 92.

[0041] The band selection switch 18 for transmission switches the elastic wave filter connected to the power amplifier 11 from the elastic wave filters 121 to 123 for transmission. The band selection switch 18 has a common terminal 181 and a plurality of (three in the illustrated example) selection terminals 182 to 184. The common terminal 181 is connected to the power amplifier 11. The selection terminal 182 of the plurality of selection terminals 182 to 184 is connected to the elastic wave filter 121, the selection terminal 183 is connected to the elastic wave filter 122, and the selection terminal 184 is connected to the elastic wave filter 123. The band selection switch 18 electrically connects the common terminal 181 to any one of the plurality of selection terminals 182 to 184, for example, based on a control signal from the RF signal processing circuit 93 of the signal processing circuit 92.

[0042] The receiving bundling switch 19 switches the elastic wave filter connected to the low noise amplifier 14 from the receiving elastic wave filters 124 to 126. The bundling switch 19 has a common terminal 191 and a plurality of (three in the illustrated example) selection terminals 192 to 194. The common terminal 191 is connected to the low noise amplifier 14. The selection terminal 192 of the plurality of selection terminals 192 to 194 is connected to the elastic wave filter 124, the selection terminal 193 is connected to the elastic wave filter 125, and the selection terminal 194 is connected to the elastic wave filter 126. The bundling switch 19 electrically connects the common terminal 191 to any one of the plurality of selection terminals 192 to 194, for example, based on a control signal from the RF signal processing circuit 93 of the signal processing circuit 92.

[0043] The plurality of external connection terminals 10 are terminals for electrically connecting to an external circuit (eg, signal processing circuit 92) and include an antenna terminal 101, a signal input terminal 102, a signal output terminal 103, a control terminal 104, and a ground electrode (not shown).

[0044] The antenna terminal 101 is connected to the antenna 91. In the high frequency module 1, the antenna terminal 101 is connected to the antenna switch 17. The antenna terminal 101 is connected to the transmission elastic wave filters 121 to 123 and the reception elastic wave filters 124 to 126 via the antenna switch 17.

[0045] The signal input terminal 102 is a terminal for inputting a transmission signal from an external circuit (for example, the signal processing circuit 92 ) into the high-frequency module 1 . In the high-frequency module 1 , the signal input terminal 102 is connected to the power amplifier 11 .

[0046] The signal output terminal 103 is a terminal for outputting the reception signal from the low noise amplifier 14 to an external circuit (for example, the signal processing circuit 92 ). In the high frequency module 1 , the signal output terminal 103 is connected to the low noise amplifier 14 .

[0047] The control terminal 104 is a terminal for inputting a control signal from an external circuit (for example, the signal processing circuit 92 ) to the high-frequency module 1 . In the high-frequency module 1 , the control terminal 104 is connected to the power amplifier controller 20 .

[0048] As described above, the high-frequency module 1 includes: a power amplifier (PA) 11, a power amplifier controller (PAC) 20, a band select switch (BSSW) 18, and other transmitting components that are used for sending signals but not for receiving signals; a low-noise amplifier (LNA) 14 and other receiving components that are used for receiving signals but not for sending signals; and transmitting and receiving components that are used for both sending and receiving signals.

[0049] (Structure of high-frequency module)

[0050] Figure 2 1 is a top view schematically showing an example of the internal structure of the high-frequency module 1. The high-frequency module 1 includes a flat substrate 50. The substrate 50 has a rectangular mounting surface 50a for mounting electronic components such as the power amplifier (PA) 11 described above. In addition, hereinafter, the normal direction of the mounting surface 50a is also referred to as the "Z-axis direction", the direction along the long side of the mounting surface 50a is referred to as the "X-axis direction", and the direction along the short side of the mounting surface 50a is referred to as the "Y-axis direction". In addition, hereinafter, the positive direction of the Z-axis (the direction from the mounting surface 50a toward each electronic component) in each figure is sometimes set to the upper side, and the negative direction of the Z-axis (the direction from each electronic component toward the mounting surface 50a) is set to the lower side for explanation.

[0051] The power amplifier (PA) 11, the power amplifier controller (PAC) 20, and the band select switch (BSSW) 18 as the transmission components are arranged in the area on the left side of the mounting surface 50a in the figure. Figure 2 , an example is shown in which the power amplifier 11 is divided into two and the band selection switch 18 is also divided into two.

[0052] A low noise amplifier (LNA) 14 as a receiving component is disposed in the lower right region of the mounting surface 50a in the figure. An antenna switch (ASW) 17 as a transmitting / receiving component is disposed in the upper right region of the mounting surface 50a in the figure.

[0053] In the above configuration, it is expected that the interference caused by mutual signals between the transmitting component and the receiving component, between the transmitting component and the transmitting and receiving component, and between the receiving component and the transmitting and receiving component can be reduced. However, in recent years, the high-frequency module 1 is required to be miniaturized, and it is conceivable that it is difficult to ensure space for configuring a shielding-only component between all these components.

[0054] Therefore, in the high frequency module 1 of this embodiment, elastic wave filters (SAW) 121 to 126 are arranged in an L shape between the transmission component arrangement area and the transmission / reception component arrangement area and between the reception component arrangement area and the transmission / reception component arrangement area.

[0055] Shield electrodes 131 to 136 are formed on the side surfaces of the elastic wave filters 121 to 126, respectively. The side surfaces of the elastic wave filters 121 to 126 refer to the surfaces extending in the direction intersecting the mounting surface 50a among the outer surfaces of the elastic wave filters 121 to 126. Figure 2 In the illustrated example, each elastic wave filter 121 to 126 has a rectangular shape when viewed from the Z-axis direction, and each elastic wave filter 121 to 126 has four side surfaces. Each shield electrode 131 to 136 is formed on all four side surfaces of the corresponding elastic wave filter.

[0056] The shielding electrode 131 has a portion extending in a direction intersecting a virtual line connecting the transmitting component and the transmitting and receiving component. Similarly, the shielding electrodes 132 and 133 also have portions extending in a direction intersecting a virtual line connecting the transmitting component and the transmitting and receiving component. Therefore, the electromagnetic wave noise radiated from one of the transmitting component and the transmitting and receiving component does not reach the other, but is shielded by the shielding electrodes 131 to 133. Thus, even if a shielding-only component is not configured between the transmitting component and the transmitting and receiving component, the isolation characteristics between the transmitting component and the transmitting and receiving component can be improved.

[0057] In addition, the shielding electrode 134 has a portion extending in a direction intersecting a virtual line connecting the receiving component and the transmitting and receiving component. Similarly, the shielding electrodes 135 and 136 also have portions extending in a direction intersecting a virtual line connecting the receiving component and the transmitting and receiving component. Therefore, the electromagnetic wave noise radiated from one of the receiving component and the transmitting and receiving component does not reach the other, but is shielded by the shielding electrodes 131 to 133. Thus, even if a shielding-only component is not configured between the receiving component and the transmitting and receiving component, the isolation characteristics between the receiving component and the transmitting and receiving component can be improved.

[0058] Thus, in the high-frequency module 1 of the present embodiment, elastic wave filters 121 to 126 each having shielding electrodes 131 to 136 formed on the side surfaces are arranged intermittently between components for which isolation is desired to be ensured (between the transmission component and the transmission / reception component, and between the reception component and the transmission / reception component). Therefore, even without arranging a component dedicated to shielding, it is possible to reduce mutual interference caused by signals between the transmission component and the transmission / reception component, and between the reception component and the transmission / reception component. As a result, in the high-frequency module, it is possible to reduce the size of the module while ensuring isolation between components.

[0059] In particular, since the transmission components and the transmission / reception components include components for processing high-power transmission signals, in the high-frequency module 1 of the present embodiment, noise signals radiated from the transmission components or the transmission / reception components during signal transmission are shielded by the shielding electrodes 131 to 136 of the elastic wave filters 121 to 126. Therefore, the isolation characteristics can be effectively improved.

[0060] In addition, Figure 2 In the example shown, since there is a relatively large margin in the area between the transmission components (power amplifier 11, etc.) and the reception components (low noise amplifier 14), a shield-only component 30 is disposed. In this way, when there is a large margin in the area, a shield-only component may be disposed in a part of the area.

[0061] [Modification 1]

[0062] Figure 3 1 is a top view schematically showing an example of the internal structure of the high frequency module 1A of this modification 1. In the high frequency module 1A of this modification 1, matching circuits 15 and 16 including inductors are arranged at positions adjacent to the elastic wave filters 121 and 122 (positions between the elastic wave filters 121 and 122 and the antenna switch 17).

[0063] It is conceivable that if a shielding electrode is interposed between matching circuits 15 and 16 and elastic wave filters 121 to 126 , the magnetic field generated by the inductors of matching circuits 15 and 16 will be deformed by the shielding electrode, and the electrical characteristics such as the inductance value of matching circuits 15 and 16 will change from the desired values, and impedance matching cannot be achieved.

[0064] In view of this point, the shielding electrodes 131A to 136A of the present modification example 1 are not formed on the side surfaces facing the matching circuits 15 and 16 among the side surfaces of the elastic wave filters 121 to 126, but are formed on the remaining side surfaces not facing the matching circuits 15 and 16. Thus, the magnetic field generated by the inductors included in the matching circuits 15 and 16 is prevented from being blocked by the shielding electrodes 131A to 136A. As a result, it is possible to prevent the impedance matching function of the matching circuits 15 and 16 from being reduced due to the shielding electrodes. In addition, it is also expected that the attenuation characteristics of the elastic wave filters 121 to 126 are improved by appropriately magnetically coupling the matching circuits 15 and 16 with the inductors included in the elastic wave filters 121 to 126.

[0065] [Modification 2]

[0066] Figure 4 It is a plan view schematically showing an example of the internal structure of a high-frequency module 1B according to this modification 2. The high-frequency module 1B according to this modification 2 is obtained by replacing the shield electrodes 131A to 136A of the high-frequency module 1A according to this modification 1 with shield electrodes 131B to 136B.

[0067] The shield electrodes 131B to 136B of the second modification example are formed only on one or two side surfaces facing the transmission component and the reception component among the side surfaces of the elastic wave filters 121 to 126 , and are not formed on the remaining side surfaces.

[0068] This makes it possible to reduce the area for forming the shield electrode and reduce the cost.

[0069] [Variation 3]

[0070] Figure 5 It is a cross-sectional view schematically showing an example of the internal structure of the high-frequency module 1C according to the present modification 3. In addition, hereinafter, when the elastic wave filters 121 to 126 described above are not distinguished, they are described as “elastic wave filter 120 ”.

[0071] The upper surface portion of the high-frequency module 1C of this modification example 3 is covered by an upper surface electrode 70. The upper surface electrode 70 is grounded at a position not shown in the figure, and functions as a shielding electrode of the high-frequency module 1C. The upper surface electrode 70 is also electrically connected to an electrode formed on the side surface of the high-frequency module 1C. Through the upper surface electrode 70 and the electrode formed on the side surface, it is possible to prevent unnecessary signals from flowing into the high-frequency module 1C from the outside, or to prevent the magnetic field and high-frequency signals generated by the electronic components inside the high-frequency module 1C from leaking to the outside of the high-frequency module 1C.

[0072] The elastic wave filter 120 is disposed in a region surrounded by the upper surface electrode 70 and the mounting surface 50a of the substrate 50. The lower surface of the elastic wave filter 120 is connected to the mounting surface 50a of the substrate 50 via solder bumps 141 and 142. The region surrounded by the upper surface electrode 70 and the mounting surface 50a of the substrate 50 is molded with a resin 60.

[0073] The shield electrode 130 is formed on the side surface and the upper surface of the elastic wave filter 120 . The shield electrode 130 is electrically connected to the upper surface electrode 70 near the upper surface of the elastic wave filter 120 .

[0074] By electrically connecting shield electrode 130 formed on the side surface of elastic wave filter 120 and upper surface electrode 70 of high-frequency module 1C, shield electrode 130 can be grounded via upper surface electrode 70. Thus, shield electrode 130 can appropriately function as a shield.

[0075] [Variation 4]

[0076] Figure 6 1 is a top view of the bottom surface of an elastic wave filter 120A showing an example of the present modification 4. An input electrode 151, ground electrodes 152, 153, and an output electrode 154 connected to internal electrical components are arranged near the four corners of the bottom surface of the elastic wave filter 120A. These terminals 151 to 154 are connected to the mounting surface 50a of the substrate 50 via solder bumps.

[0077] A circular ground electrode 155 that is not connected to internal electrical components is disposed near the center of the lower surface of the elastic wave filter 120A. The ground electrode 155 is connected to a ground electrode formed on the mounting surface 50a of the substrate 50 via a solder bump.

[0078] Shield electrode 130A formed on the side surface of elastic wave filter 120A has connection portions 130a and 130b extending on the bottom surface of elastic wave filter 120A and electrically connected to ground electrode 155. Thus, shield electrode 130 is grounded via ground electrode 155 on the bottom surface of elastic wave filter 120A.

[0079] In the elastic wave filter 120 according to the third modification described above, the shield electrode 130 formed on the side surface is connected to the upper surface electrode 70 of the high-frequency module 1C near the upper surface of the elastic wave filter 120 and is grounded.

[0080] In contrast, in the elastic wave filter 120A of the fourth modification, the shield electrode 130A formed on the side surface is grounded by being connected to the ground electrode 155 disposed on the lower surface. Thus, the shield electrode 130A can be grounded without adding an electrode or processing (such as a via hole) for grounding the shield electrode 130 inside the elastic wave filter 120A or the high-frequency module 1. Therefore, the shield electrode 130A can be grounded without changing the dedicated area of ​​the high-frequency module 1 and without increasing the number of steps for manufacturing the high-frequency module 1.

[0081] In addition, the ground electrode 155 for the shield electrode 130A is not connected to any electrical component inside the elastic wave filter 120A. Therefore, the ground electrode 155 can be arranged without changing the shape of the cover layer forming the lower surface of the elastic wave filter 120A.

[0082] Furthermore, since ground electrodes 152 and 153 connected to electrical components inside elastic wave filter 120A often have inductance components, ground electrode 155 for shield electrode 130A is provided separately from ground electrodes 152 and 153. Thus, ground electrode 155 can be arranged while minimizing the change in inductance components of ground electrodes 152 and 153.

[0083] also, Figure 6 Although the number of the ground electrode 155 for the shield electrode 130A is shown as one, the number of the ground electrodes for the shield electrode 130A may be two or more.

[0084] Figure 7 1 is a top view of the bottom surface of an elastic wave filter 120B showing another example of the present modification example 4. In the elastic wave filter 120B, two ground electrodes 156 and 157 for the shield electrode 130B are arranged separately on the left and right. Furthermore, the connecting portions 130c and 130d of the shield electrode 130B are connected to the two ground electrodes 156 and 157, respectively. In this way, the two ground electrodes 156 and 157 for the shield electrode 130A may also be arranged on the bottom surface of the elastic wave filter 120B.

[0085] in addition, Figure 6 The shape of the ground electrode 155 for the shield electrode 130A shown is circular, but the shape of the ground electrode for the shield electrode 130A is not necessarily limited to a circular shape.

[0086] Figure 8FIG. 1 is a top view of the lower surface of an elastic wave filter 120C showing another example of the present modification 4. In the elastic wave filter 120C, the ground electrode 158 for the shield electrode 130 is formed into an elliptical shape with the X-axis direction as the major axis. Furthermore, the connecting portions 130e and 130f of the shield electrode 130C are connected to the ground electrode 158. In this way, the elliptical ground electrode 158 for the shield electrode 130C may also be arranged on the lower surface of the elastic wave filter 120B.

[0087] In addition, from the viewpoint of ensuring the reliability of the elastic wave filter in any case, it is desirable that the electrodes disposed on the lower surface of the elastic wave filter are located at point-symmetrical positions. Figures 6 to 8 In the example shown, the electrodes are arranged at point-symmetrical positions with the center of the bottom surface of the elastic wave filter being the symmetric point, thereby ensuring the reliability of the elastic wave filter.

[0088] [Variation 5]

[0089] Fig. 9 1 is a plan view schematically showing an example of the internal structure of a high-frequency module 1D according to the fifth modification. Fig.10 yes Fig. 9 XX section view in.

[0090] In the high-frequency module 1D according to the fifth modification, long stripe bumps (linear bumps) 141 to 146 are respectively arranged on the lower surfaces (mounting surfaces) of the elastic wave filters 121 to 126 .

[0091] The strip bumps 141 to 146 are respectively configured to separate the components that need to be isolated (between the transmitting component and the transmitting and receiving component, and between the receiving component and the transmitting and receiving component). Specifically, the strip bumps 141 and 142 extend in the Y-axis direction intersecting with the virtual line connecting the transmitting component (PA11, etc.) and the transmitting and receiving component (ASW17). The strip bumps 143 to 146 extend in the X-axis direction intersecting with the virtual line connecting the receiving component (LNA14) and the transmitting and receiving component (ASW17). Therefore, in addition to the shielding electrodes 131 to 136, the strip bumps 143 to 146 can also be used to reduce the interference caused by mutual signals between the transmitting component and the transmitting and receiving component, and between the receiving component and the transmitting and receiving component. For example, Fig.10 As shown, electromagnetic wave noise radiated from the ASW 17 toward the LNA 14 is blocked by the shield electrode 135 disposed on the side of the elastic wave filter 125, and is also blocked by the stripe bump 145 disposed on the bottom surface of the elastic wave filter 125. As a result, the isolation between the ASW 17 and the LNA 14 can be strengthened by disposing the stripe bump 145.

[0092] The lower surfaces of the stripe bumps 141 to 146 are connected to a ground electrode formed on the mounting surface 50a of the substrate 50. The shielding electrodes 131 to 136 are connected to both ends of the stripe bumps 141 to 146 at the periphery of the lower surfaces of the elastic wave filters 121 to 126. Thus, the shielding electrodes 131 to 136 can be grounded via the stripe bumps 141 to 146, so that the shielding properties of the shielding electrodes 131 to 136 can be enhanced.

[0093] [Variation 6]

[0094] In recent years, CA (Carrier Aggregation) technology has been put into practical use, which increases the communication capacity per unit time and improves the communication speed by simultaneously transmitting or receiving signals of different frequency bands. When simultaneously transmitting and receiving signals of different frequency bands, the elastic wave filter 120 having the shielding electrode 130 formed on the side surface can be arranged at a position intersecting with a virtual line connecting matching circuits (inductors) of different frequency bands.

[0095] For example, when radio waves of different frequency bands are transmitted simultaneously, the elastic wave filter 120 having the shield electrode 130 formed on the side surface may be disposed at a position intersecting with a virtual line connecting the transmission components of different frequency bands.

[0096] Fig.11 1 is a top view schematically showing an example of the internal structure of the high-frequency module 1E of the present modification 6. The high-frequency module 1E is configured to simultaneously transmit radio waves of different frequency bands A and B. The high-frequency module 1E includes a power amplifier 11A for transmitting radio waves of frequency band A and an inductor 15A for output matching of the power amplifier 11A, a power amplifier 11B for transmitting radio waves of frequency band B and an inductor 15B for output matching of the power amplifier 11B, and an elastic wave filter 120 with a shielding electrode 130.

[0097] The elastic wave filter 120 with the shielding electrode 130 is arranged at a position intersecting with a virtual line connecting the inductor 15A for output matching of the power amplifier 11A and the inductor 15B for output matching of the power amplifier 11B. Thus, when the radio waves of the frequency band A and the radio waves of the frequency band B are transmitted simultaneously, intermodulation distortion (IMD: Inter Modulation Distortion) generated by the interference between the radio waves of different frequency bands can be suppressed.

[0098] In addition, for example, when radio waves in frequency band A are transmitted and radio waves in frequency band C are received simultaneously, the elastic wave filter 120 having a shielding electrode 130 arranged on the side can be arranged at a position where the virtual line connecting the component for transmitting radio waves in frequency band A and the component for receiving radio waves in frequency band C intersects.

[0099] Fig.12 1 is a top view schematically showing an example of the internal structure of a high-frequency module 1F of another example of the present modification example 6. In the high-frequency module 1F, it is configured to simultaneously transmit radio waves in the frequency band A and receive radio waves in the frequency band C. The high-frequency module 1F includes a power amplifier 11A for transmitting radio waves in the frequency band A and an inductor 15A for output matching of the power amplifier 11A, a low-noise amplifier 14C for receiving radio waves in the frequency band C and an inductor 16C for input matching of the low-noise amplifier 14C, and a plurality of elastic wave filters 120 each having a shielding electrode 130.

[0100] The elastic wave filter 120 with the shield electrode 130 is arranged at a position intersecting with a virtual line connecting the inductor 15A for output matching of the power amplifier 11A and the inductor 16C for input matching of the low noise amplifier 14C. This can suppress the interference between the signals when simultaneously transmitting radio waves of the frequency band A and receiving radio waves of the frequency band C.

[0101] Fig.13 1 is a top view schematically showing an example of the internal structure of a high-frequency module 1G of another example of the present modification 6. The high-frequency module 1G is configured to simultaneously receive radio waves in frequency band A and radio waves in frequency band D among radio waves in four different frequency bands A, B, C, and D, and is configured to simultaneously receive radio waves in frequency band B and radio waves in frequency band C.

[0102] The high-frequency module 1G includes: an input matching element group 40A of a low-noise amplifier for receiving radio waves in frequency band A, an input matching element group 40B of a low-noise amplifier for receiving radio waves in frequency band B, an input matching element group 40C of a low-noise amplifier for receiving radio waves in frequency band C, an input matching element group 40D of a low-noise amplifier for receiving radio waves in frequency band D, an input matching circuit element group 110 for an elastic wave filter 120, and a plurality of elastic wave filters 120 each having a shielding electrode 130.

[0103] In the high-frequency module 1G, a plurality of input matching circuit element groups 110 for elastic wave filters are arranged along the X-axis direction at the center of the substrate 50 in the Y-axis direction, and a plurality of elastic wave filters 120 each having a shield electrode 130 are arranged on both sides of the input matching circuit element group 110 so as to sandwich the input matching circuit element group 110. Furthermore, input matching element groups 40A and 40B that do not receive each other simultaneously are arranged on the outer peripheral side of the elastic wave filter 120 in the positive direction of the Y-axis, and input matching element groups 40C and 40D that do not receive each other simultaneously are arranged on the outer peripheral side of the elastic wave filter 120 in the negative direction of the Y-axis.

[0104] Fig.14 1 is a top view schematically showing an example of the internal structure of a high-frequency module 1H of another example of the present modification 6. In the high-frequency module 1H, similarly to the high-frequency module 1G described above, it is configured to simultaneously receive radio waves in the frequency band A and radio waves in the frequency band D among radio waves in four different frequency bands A, B, C, and D, and to simultaneously receive radio waves in the frequency band B and radio waves in the frequency band C.

[0105] In the high frequency module 1H, input matching element groups 40A to 40D for low noise amplifiers, a plurality of elastic wave filters 120 each having a shield electrode 130 , and an input matching circuit element group 110 for elastic wave filters are arranged in a lattice shape.

[0106] In either of the high-frequency modules 1G and 1H, a plurality of elastic wave filters 120 each having a shielding electrode 130 are arranged at a position where a virtual line connecting the input matching element groups 40A and 40D to be received simultaneously intersects, and at a position where a virtual line connecting the input matching element groups 40B and 40C to be received simultaneously intersects. This can improve the isolation characteristics between the receiving components of one frequency band to be received simultaneously and the receiving components of another frequency band. As a result, it is possible to reduce the deterioration of the reception sensitivity of one frequency band to be received simultaneously due to the signal of the other frequency band.

[0107] Fig.15 1 is a top view schematically showing an example of the internal structure of a high-frequency module 1I of another example of this variation 6. In the high-frequency module 1I, any frequency band among Low, Mid, and High is supported. Specifically, the high-frequency module 1I includes: a transmission component 81 for Low, Mid, and High frequency bands (a power amplifier or an output matching element of a power amplifier, etc.), a transmission component for Low frequency band (a front-end module, etc.) 82, a low-noise amplifier 14I and an antenna switch 17I for Low and Mid frequency bands, and an antenna matching element (an inductor, etc.) 100 for Mid and High frequency bands.

[0108] If the higher harmonics (second harmonics or third harmonics) HD of the Low band transmission signal generated by the Low, Mid, and High band transmission component 81 or the Low band transmission component 82 overlap with the Mid and High bands, and the higher harmonics HD of the Low band transmission signal leak to the antenna matching element 100, there is a concern that the receiving sensitivity of the Mid and High bands may deteriorate.

[0109] Therefore, in the high-frequency module 1I, a plurality of elastic wave filters 120 each having a shield electrode 130 are arranged to surround the antenna matching element 100 for the Mid and High frequency bands. This prevents the harmonics HD of the transmission signal in the Low frequency band generated by the transmission components 81 and 82 from leaking to the antenna matching element 100. As a result, the deterioration of the reception sensitivity in the Mid and High frequency bands can be reduced.

[0110] [Variation 7]

[0111] The elastic wave filter 120 with the shield electrode 130 and other electronic components may be stacked one on another.

[0112] Fig.16 as well as Fig.17 It is a plan view schematically showing a model example of the stacked structure of the elastic wave filter 120 according to the seventh modification.

[0113] You can also Fig.16 As shown in the modes (A), (B), and (C), respectively, the structure in which the elastic wave filter 121 is stacked on another elastic wave filter 122 is arranged between the transmission component 80 and the reception component 90.

[0114] In the high-frequency modules 1J, 1K, and 1L shown in the modes (A), (B), and (C), respectively, the elastic wave filter 121 is stacked on the other elastic wave filter 122, and shielding electrodes 131 and 132 are formed on the side surfaces of the elastic wave filters 121 and 122 on the negative side of the Y axis, respectively. The shielding electrode 132 is electrically connected to the ground electrode of the substrate 50 via the electrode on the bottom surface of the elastic wave filter 122.

[0115] In the high-frequency modules 1J, 1K, and 1L, the grounding paths of the shield electrodes 131 are different from each other.

[0116] In the high frequency module 1J shown in the mode (A), the shield electrode 131 is electrically connected to the ground electrode of the substrate 50 via the bottom electrode of the elastic wave filter 121 , the top electrode of the elastic wave filter 122 , the side shield electrode 132 , and the bottom electrode.

[0117] In the high-frequency module 1K shown in the mode (B), the shield electrode 131 is connected to the upper surface electrode 70 via the wire W1 , so the shield electrode 131 is electrically connected to the ground electrode of the substrate 50 via the wire W1 and the upper surface electrode 70 .

[0118] In the high-frequency module 1L shown in the mode (C), the shield electrode 131 is connected to the ground electrode G1 of the substrate 50 via the wire W2 .

[0119] In addition, you can also Fig.16 As shown in the modes (D) and (E) respectively, the structure in which the elastic wave filter 121 is stacked on the electronic circuit 140 other than the elastic wave filter is arranged between the transmission component 80 and the reception component 90.

[0120] In the high-frequency module 1M shown in the mode (D), the upper end of the shield electrode 131 is connected to the upper surface electrode 70 , so the shield electrode 131 is electrically connected to the ground electrode of the substrate 50 via the upper surface electrode 70 .

[0121] In the high-frequency module 1N shown in the mode (E), the elastic wave filter 121 and other electronic circuits 140 are molded integrally with a resin 150 , and a shield electrode 151 is formed on the side surface of the resin 150 on the negative side in the Y-axis direction.

[0122] In addition, you can also Fig.17 As shown in the patterns (F) and (G), when the high-frequency module is viewed from above in the Z-axis direction, either the elastic wave filter 121 or another component on which the elastic wave filter 121 is stacked has a portion that does not overlap with the other.

[0123] In the high-frequency module 1P shown in the mode (F), the elastic wave filter 121 is stacked on the elastic wave filter 122, and the end of the upper elastic wave filter 121 on the negative side of the Y axis protrudes into the area between the lower elastic wave filter 122 and the transmitting member 80. Shield electrodes 131 and 132 are formed on the side surfaces of the elastic wave filters 121 and 122 on the negative side of the Y axis, respectively.

[0124] In the high-frequency module 1Q shown in the mode (G), the elastic wave filter 121 is stacked on the elastic wave filter 122, and the end of the upper elastic wave filter 121 on the negative side in the Y-axis direction protrudes to the area above the transmission member 80. The shield electrode 132 is formed on the side surface of the elastic wave filter 122 on the negative side in the Y-axis direction, but the shield electrode 131 is formed on the side surface of the elastic wave filter 121 on the positive side in the Y-axis direction.

[0125] In the high-frequency modules 1J to 1Q shown in the modes (A) to (G), respectively, the elastic wave filter 121 is stacked on other components (elastic wave filter 122 or other electronic circuit 140) in the Z-axis direction, and shielding electrodes 131 and 132 are formed on the side surfaces of the elastic wave filter 120 and the side surfaces of the other components. Thus, the shielding electrodes 131 and 132 are arranged in the Z-axis direction to ensure the height of the shielding electrodes, thereby further improving the isolation characteristics between the transmission component 80 and the reception component 90. In addition, by stacking the elastic wave filter 121 and other components, the high-frequency module can be miniaturized.

[0126] In addition, you can also Fig.17 As in the high-frequency module 1R shown in the mode (H), the elastic wave filter 121 with the shielding electrode 131 and the elastic wave filter 122 with the shielding electrode 132 are arranged in the Y-axis direction in the region between the transmitting component 80 and the receiving component 90. In such a structure, the isolation characteristics between the transmitting component 80 and the receiving component 90 can be further improved.

[0127] [Variation 8]

[0128] Fig.18 This is a top view schematically showing an example of an electrode pattern on the lower surface (mounting surface) of the elastic wave filter of this modification 8. Generally, when the pad electrode on the lower surface of the elastic wave filter is formed by electroplating, the plated electrode is formed only on the electrode to which power is supplied. Therefore, in order to make the pad electrode conduct with the outside, it is necessary to form a wiring for connecting the pad electrode and the outside on the lower surface of the elastic wave filter.

[0129] The signal electrodes 161, 166 and the ground electrodes 162 to 165 formed by electroplating are arranged on Fig.18 The bottom surfaces of the elastic wave filters 120D, 120E, and 120F shown in the modes (A), (B), and (C) are, respectively. The signal electrodes 161 and 166 are pad electrodes for signal input and output that are electrically connected to the circuit inside the elastic wave filter. The ground electrodes 162 to 165 are pad electrodes for grounding that are electrically connected to the circuit inside the elastic wave filter.

[0130] In addition to signal electrodes 161 and 166 and ground electrodes 162 to 165, wirings 201 to 206 are formed on the bottom surfaces of elastic wave filters 120D, 120E, and 120F. Wirings 201 and 206 are wirings for connecting signal electrodes 161 and 166 to the outside, respectively. Wirings 202 to 205 are wirings for connecting ground electrodes 162 to 165 to the outside, respectively.

[0131] In the elastic wave filter 120D shown in the mode (A), the shielding electrode 130 is formed on the side located in the positive direction of the X-axis and the side located in the negative direction of the X-axis. The end of the wiring 201 for the signal electrode 161 is exposed on the side located in the negative direction of the Y-axis where the shielding electrode 130 is not formed. Similarly, the other end of the wiring 206 for the signal electrode 166 is exposed on the side located in the positive direction of the Y-axis where the shielding electrode 130 is not formed. The ends of the wirings 202 and 203 for the ground electrodes 162 and 163 are exposed on the side located in the positive direction of the X-axis and are connected to the shielding electrode 130. Similarly, the ends of the wirings 204 and 205 for the ground electrodes 164 and 165 are exposed on the side located in the negative direction of the X-axis and are connected to the shielding electrode 130.

[0132] By arranging the wirings 201 to 206 as in the pattern (A), it is possible to input and output signals to the signal electrodes 161 and 166 , and it is possible to ground the shield electrode 130 so that the shield electrode 130 has a shielding property.

[0133] The elastic wave filter 120E shown in the mode (B) is different from the elastic wave filter 120D shown in the mode (A) in that the shield electrode 130 located in the negative direction of the X axis is removed and the end of the wiring 206 for the signal electrode 166 is exposed on the side located in the negative direction of the X axis.

[0134] By arranging the wirings 201 to 206 as in the pattern (B), it is possible to input and output signals to the signal electrodes 161 and 166 , and it is possible to ground the shield electrode 130 so that the shield electrode 130 has a shielding property.

[0135] The elastic wave filter 120F shown in the mode (C) is different from the elastic wave filter 120E shown in the mode (B) in that the widths (dimensions in the Y-axis direction) of the wirings 202 and 203 for the ground electrodes 162 and 163 are increased. By increasing the widths of the wirings 202 and 203 for the ground electrodes 162 and 163 in this way, the grounding property of the shielding electrode 130 can be improved, thereby improving the shielding characteristics of the shielding electrode 130.

[0136] The embodiments and modifications disclosed this time should be considered as illustrative in all aspects and not restrictive. The scope of the present invention is indicated not by the description of the above embodiments but by the claims, and is intended to include all changes within the meaning and scope equivalent to the claims.

[0137] Those skilled in the art can understand that the above-mentioned embodiments and their modifications are specific examples of the following technical solutions.

[0138] (First Item)

[0139] The high-frequency module disclosed in the present invention comprises: a substrate having a mounting surface; a first component and a second component arranged on the mounting surface; a first elastic wave filter arranged between the first component and the second component on the mounting surface; and a first shielding electrode formed on at least one side surface of the first elastic wave filter. The first shielding electrode has a portion extending in a direction intersecting a virtual line connecting the first component and the second component.

[0140] (Second Item)

[0141] The high-frequency module described in the first item further comprises: a second elastic wave filter arranged in parallel with the first elastic wave filter between the first component and the second component on the mounting surface; and a second shielding electrode formed on at least one side surface of the second elastic wave filter. The second shielding electrode has a portion extending in a direction intersecting a virtual line connecting the first component and the second component.

[0142] (Third Item)

[0143] The high-frequency module described in the first item further includes an inductor, which is arranged at a position adjacent to the first elastic wave filter on the mounting surface. The inductor is electrically connected to the first elastic wave filter. The first elastic wave filter has a first side surface facing the inductor and a second side surface not facing the inductor. The first shielding electrode is not formed on the first side surface, but is formed on the second side surface.

[0144] (4th item)

[0145] In the high-frequency module described in the first item, the first component is a component for transmitting a signal.

[0146] (Fifth Item)

[0147] The high-frequency module according to the first item further includes an upper surface electrode formed on an upper surface portion of the high-frequency module. The first shielding electrode is electrically connected to the upper surface electrode.

[0148] (Sixth Item)

[0149] In the high frequency module described in the first item, the first elastic wave filter has a lower surface connected to the mounting surface via a bump electrode. A ground electrode not electrically connected to an internal circuit of the first elastic wave filter is disposed on the lower surface of the first elastic wave filter. The first shielding electrode is electrically connected to the ground electrode.

[0150] (Item 7)

[0151] The communication device of the present disclosure includes: the high-frequency module described in any one of the first to sixth items; and an external circuit connected to the high-frequency module.

[0152] (Item 8)

[0153] In the high frequency module described in the first item, a strip-shaped bump electrode electrically connected to a circuit inside the first elastic wave filter is disposed on the lower surface of the first elastic wave filter. The strip-shaped bump electrode has a portion extending in a direction intersecting a virtual line connecting the first component and the second component.

[0154] (Item 9)

[0155] In the high-frequency module described in the first item, the first component is a component for transmitting a signal of a first frequency, and the second component is a component for transmitting or receiving a signal of a second frequency different from the first frequency.

[0156] (Item 10)

[0157] The high frequency module described in the first item further comprises: a third member arranged in parallel with the first elastic wave filter; and a second shielding electrode formed on at least one side surface of the third member. The second shielding electrode has a portion extending in a direction intersecting a virtual line connecting the first member and the second member.

[0158] (Item 11)

[0159] In the high-frequency module described in Item 10, the first elastic wave filter and the third member are stacked on each other.

[0160] (Item 12)

[0161] In the high-frequency module described in Item 11, the third component is an electronic component.

[0162] (Item 13)

[0163] In the high-frequency module described in the eleventh item, when the first elastic wave filter and the third member are viewed in plan from a normal direction of the substrate, one of the first elastic wave filter and the third member has a portion that does not overlap with the other.

[0164] (Item 14)

[0165] In the high-frequency module described in the first item, the first elastic wave filter has a lower surface connected to the mounting surface via a bump electrode. A ground electrode electrically connected to an internal circuit of the first elastic wave filter is arranged on the lower surface of the first elastic wave filter. The first shielding electrode and the ground electrode are connected via a grounding connection wiring exposed on a side surface of the first elastic wave filter.

[0166] (Item 15)

[0167] In the high frequency module described in item 14, a signal electrode electrically connected to a circuit inside the first elastic wave filter is arranged on the lower surface of the first elastic wave filter. The signal electrode is connected to a signal connection wiring having an end exposed on a side surface different from a side surface on which the first shielding electrode is formed.

[0168] (Item 16)

[0169] The communication device of the present disclosure includes: the high-frequency module described in any one of items 9 to 15; and an external circuit connected to the high-frequency module.

Claims

1. A high frequency module, wherein: have: a substrate having a mounting surface; A first component and a second component are arranged on the mounting surface; A first elastic wave filter is disposed between the first component and the second component on the mounting surface; and a first shielding electrode formed on at least one side of the first elastic wave filter, The first shield electrode has a portion extending in a direction intersecting a virtual line connecting the first member and the second member.

2. The high frequency module according to claim 1, wherein: Also available: a second elastic wave filter arranged in parallel with the first elastic wave filter between the first component and the second component on the mounting surface; and a second shielding electrode formed on at least one side of the second elastic wave filter, The second shield electrode has a portion extending in a direction intersecting a virtual line connecting the first member and the second member.

3. The high frequency module according to claim 1, wherein: further comprising an inductor disposed at a position adjacent to the first elastic wave filter on the mounting surface, The inductor is electrically connected to the first elastic wave filter, The first elastic wave filter has a first side surface facing the inductor and a second side surface not facing the inductor. The first shielding electrode is not formed on the first side surface but is formed on the second side surface.

4. The high frequency module according to claim 1, wherein: The first component is a component for transmitting a signal.

5. The high frequency module according to claim 1, wherein: further comprising an upper surface electrode formed on an upper surface portion of the high frequency module, The first shielding electrode is electrically connected to the upper surface electrode.

6. The high frequency module according to claim 1, wherein: The first elastic wave filter has a lower surface connected to the mounting surface via a bump electrode, A ground electrode which is not electrically connected to an internal circuit of the first elastic wave filter is disposed on the lower surface of the first elastic wave filter. The first shielding electrode is electrically connected to the ground electrode.

7. The high frequency module according to claim 1, wherein: A strip-shaped bump electrode electrically connected to an internal circuit of the first elastic wave filter is disposed on a lower surface of the first elastic wave filter. The strip-shaped bump electrode has a portion extending in a direction intersecting a virtual line connecting the first member and the second member.

8. The high frequency module according to claim 1, wherein: The first component is a component for transmitting a signal of a first frequency, The second component is a component for transmitting or receiving a signal of a second frequency different from the first frequency.

9. The high frequency module according to claim 1, wherein: Also available: A third component arranged in alignment with the first elastic wave filter; and a second shielding electrode formed on at least one side of the third component, The second shield electrode has a portion extending in a direction intersecting a virtual line connecting the first member and the second member.

10. The high frequency module according to claim 9, wherein: The first elastic wave filter and the third member are stacked on each other.

11. The high frequency module according to claim 10, wherein: The third component is an electronic component.

12. The high frequency module according to claim 10, wherein: When the first elastic wave filter and the third member are viewed in plan from a direction normal to the substrate, one of the first elastic wave filter and the third member has a portion that does not overlap with the other.

13. The high frequency module according to claim 1, wherein: The first elastic wave filter has a lower surface connected to the mounting surface via a bump electrode, A ground electrode electrically connected to an internal circuit of the first elastic wave filter is disposed on the lower surface of the first elastic wave filter. The first shield electrode and the ground electrode are connected via a ground connection wiring exposed on a side surface of the first elastic wave filter.

14. The high frequency module according to claim 13, wherein: A signal electrode electrically connected to an internal circuit of the first elastic wave filter is disposed on the lower surface of the first elastic wave filter. The signal electrode is connected to a signal connection wiring, and the signal connection wiring has an end portion exposed on a side surface different from a side surface on which the first shielding electrode is formed.

15. A communication device, wherein: have: The high frequency module according to any one of claims 1 to 6; and The external circuit is connected to the high frequency module.

16. A communication device, wherein: have: The high frequency module according to any one of claims 8 to 15; and The external circuit is connected to the high frequency module.

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