A high temperature and high pressure radio frequency admittance level switch probe
By designing a high-temperature and high-pressure RF admittance level switch probe and adopting a maze seal and heat dissipation design, the problem of low extreme pressure resistance of the existing probe is solved, and higher pressure resistance and temperature resistance are achieved.
Patent Information
- Application Number
- CN202411676412.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-22
- Publication Date
- 2025-02-07
- Estimated Expiration
- 2044-11-22
AI Technical Summary
The existing RF admittance level switch probes have low ultimate pressure resistance and are difficult to adapt to high temperature and high pressure conditions.
A high-temperature and high-pressure RF conduction level switch probe is designed, using a combination of shell, heat insulation, detection conductor and pressing member. The heat insulation member is pressed into the storage groove through the pressing member to form a maze seal and lift it. Sealing effect and reduce temperature through heat sinks and spacers.
It achieves a better sealing effect, improves the ultimate temperature and ultimate pressure resistance of the RF admittance level switch probe, and can adapt to high temperature and high pressure working conditions.
Smart Images

Figure CN119178484B_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the technical field of level detection, and specifically provides a high-temperature and high-pressure radio frequency admittance level switch probe. Background Art
[0002] There are many types of existing level switches, such as capacitive level switches and radio frequency admittance level switches. Capacitive level switches include a detection conductor. As the level rises, the material covers the detection conductor, and the capacitance value between the detection conductor and the medium in the circuit (in the case of conductive materials) or the capacitance value between the detection conductor and the pipe wall (in the case of insulating materials) increases accordingly. Since the change in the level causes the imbalance of the capacitance bridge, the change in capacitance value depends on the dielectric constant of the material being measured, and then the signal is detected and amplified, and finally the corresponding signal is output.
[0003] The measurement principle of the RF admittance level switch is similar to that of the capacitive level switch. The detection conductor and the container wall form a two-stage capacitor with a fixed spacing. After the material level in the container covers the detection conductor, the medium and the air above the medium act as the filler between the capacitors. The RF admittance level switch can emit a certain high-frequency radio wave to act on the detection conductor. As the level of the medium changes, the electrical parameters (such as capacitance and admittance) between the detection conductor and the container wall change, which in turn causes changes in the radio waves acting on the detection conductor. According to the changes in the radio waves, the level of the medium can be analyzed and calculated. The measurement results of the RF admittance level switch are highly accurate and are not affected by the hanging of the detection conductor.
[0004] The existing radio frequency admittance level switch probe has a low ultimate pressure resistance and is difficult to adapt to high temperature and high pressure working conditions. Summary of the invention
[0005] The present invention aims to solve the above technical problem, that is, to solve the problem that the ultimate withstand voltage capability of the existing radio frequency admittance level switch probe is low.
[0006] In a first aspect, the present invention provides a high-temperature and high-pressure radio frequency admittance level switch probe, comprising: a shell, a cavity and a receiving groove are opened along the axis, the receiving groove is located at one end of the cavity, and the diameter of the receiving groove is greater than the diameter of the cavity; a thermal insulation member, located in the receiving groove, comprising a first thermal insulation member and a second thermal insulation member; a detection conductor comprises a first conductor and a second conductor, the first conductor and the second conductor are electrically connected, the second conductor is plugged into the second thermal insulation member and the second end extends out of the second thermal insulation member and the shell, the first conductor is plugged into the first thermal insulation member, and the second conductor is provided with an annular flange protruding on the circumferential surface near the end of the first conductor, the flange is located between the first thermal insulation member and the second thermal insulation member and forms a labyrinth seal; a pressing member, connected to the first end of the shell, and configured to press the thermal insulation member into the receiving groove.
[0007] By adopting the above technical solution, the first thermal insulation member and the second thermal insulation member are pressed into the accommodating groove by using a clamping member, so that the first thermal insulation member and the second thermal insulation member are slightly deformed, thereby squeezing the detection conductor and the flange, thereby achieving a better sealing effect and improving the maximum tolerance temperature and maximum pressure resistance of the RF admittance level switch probe.
[0008] In a specific implementation of the above-mentioned high-temperature and high-pressure radio frequency admittance level switch probe, the first conductor is threadedly connected to the second conductor.
[0009] In a specific embodiment of the above-mentioned high-temperature and high-pressure radio frequency admittance level switch probe, the thermal insulation member also includes a sealing member, which is located between the flange and the second thermal insulation member, and the second thermal insulation member is provided with a conical groove at the end near the sealing member, and the end of the seal facing the second thermal insulation member is provided with a conical portion that cooperates with the conical groove.
[0010] By adopting the above technical solution and utilizing the cooperation between the tapered portion and the tapered groove, the force on the mating surfaces of the seal and the second thermal insulation member is more evenly distributed, thereby achieving better sealing performance.
[0011] In a specific implementation of the high-temperature and high-pressure radio frequency admittance level switch probe, a sealing ring is provided between the sealing member and the conical groove.
[0012] By adopting the above technical solution, the sealing degree between the sealing member and the second thermal insulation member can be further improved by using the sealing ring.
[0013] In a specific implementation of the high-temperature and high-pressure radio frequency admittance level switch probe, a heat sink is provided on the peripheral surface of the shell.
[0014] By adopting the above technical solution, the heat sink can accelerate the heat dissipation speed of the shell, thereby reducing the temperature of the shell to increase the ultimate tolerance temperature of the radio frequency admittance level switch probe.
[0015] In a specific embodiment of the above-mentioned high-temperature and high-pressure radio frequency admittance level switch probe, an isolating member is provided in the cavity, and the isolating member divides the cavity into a first cavity and a second cavity, the first cavity is close to the containing groove, and the isolating member is configured to isolate the first cavity and the second cavity.
[0016] By adopting the above technical solution, the isolating member can block the first cavity and the second cavity, reduce the efficiency of heat transfer from the second cavity to the first cavity, thereby reducing the temperature of the shell and the detection conductor, thereby improving the ultimate tolerance temperature of the RF admittance level switch probe.
[0017] In a specific implementation of the high-temperature and high-pressure radio frequency admittance level switch probe, a first interface and a second interface are provided on the shell, and the first interface and the second interface are communicated with the first cavity and connected to a cooling medium.
[0018] By adopting the above technical solution, the cooling medium is introduced into one of the first interface and the second interface and flows out from the other, so as to cool the detection conductor and the shell, thereby improving the extreme tolerance temperature of the radio frequency admittance level switch probe.
[0019] In a specific implementation of the above-mentioned high-temperature and high-pressure radio frequency admittance level switch probe, the high-temperature and high-pressure radio frequency admittance level switch probe further includes a cap, and the cap is connected to one end of the housing where the accommodating groove is provided.
[0020] Compared with the prior art, the present invention has the following beneficial effects:
[0021] The high-temperature and high-pressure radio frequency admittance level switch probe provided by the present invention includes a shell, a heat insulating member, a detection conductor and a pressing member. The shell is provided with a cavity and a receiving groove along the axis. The receiving groove is located at one end of the cavity, and the diameter of the receiving groove is greater than the diameter of the cavity. The heat insulating member is located in the receiving groove and includes a first heat insulating member and a second heat insulating member. The detection conductor includes a first conductor and a second conductor. The first conductor and the second conductor are electrically connected. The second conductor is plugged into the second heat insulating member and the second end extends out of the second heat insulating member and the shell. The first conductor is plugged into the first heat insulating member. The second conductor is protruding on the circumferential surface close to the end of the first conductor and is provided with an annular flange. The flange is located between the first heat insulating member and the second heat insulating member and forms a labyrinth seal. The pressing member is connected to the first end of the shell and is configured to press the heat insulating member into the receiving groove. The first heat insulating member and the second heat insulating member are pressed into the receiving groove by the pressing member, so that a labyrinth seal is formed between the flange, the first heat insulating member and the second heat insulating member, thereby achieving a better sealing effect and improving the extreme tolerance temperature and extreme pressure resistance of the radio frequency admittance level switch probe. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] The preferred embodiments of the present invention are described below in conjunction with the accompanying drawings, in which:
[0023] Figure 1 It is a schematic diagram of the cross-sectional structure of the radio frequency admittance level switch probe provided by the present invention;
[0024] Figure 2 yes Figure 1 Schematic diagram of the local structure in;
[0025] Figure 3 It is a schematic diagram of the exploded structure of the radio frequency admittance level switch probe provided by the present invention;
[0026] Figure 4 It is a partial structural schematic diagram of another radio frequency admittance level switch probe provided by the present invention.
[0027] Description of reference numerals:
[0028] 1. Shell; 11. Cavity; 111. First cavity; 112. Second cavity; 12. Receiving groove; 13. Heat sink; 14. Isolation member; 2. First thermal insulation member; 3. Second thermal insulation member; 4. Sealing member; 5. Detection conductor; 51. First conductor; 52. Second conductor; 53. Flange; 6. Pressing member; 7. Cover cap. DETAILED DESCRIPTION
[0029] The preferred embodiments of the present invention are described below with reference to the accompanying drawings. It should be understood by those skilled in the art that these embodiments are only used to explain the technical principles of the present invention and are not intended to limit the protection scope of the present invention.
[0030] It should be noted that in the description of the present invention, the terms "upper", "lower", "left", "right", "inner", "outer" and the like indicating directions or positional relationships are based on the directions or positional relationships shown in the drawings, which are only for the convenience of description, and do not indicate or imply that the device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.
[0031] In addition, it should be noted that in the description of the present invention, unless otherwise clearly specified and limited, the terms "installation", "setting", and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection, an indirect connection through an intermediate medium, or the internal connection of two components. For those skilled in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0032] In order to solve the problem that the existing radio frequency admittance level switch probe has a low ultimate pressure resistance and is difficult to adapt to high-pressure working conditions, the present invention provides a high-temperature and high-pressure radio frequency admittance level switch probe, comprising: a shell, a cavity and a receiving groove are opened along the axis, the receiving groove is located at one end of the cavity, and the diameter of the receiving groove is larger than the diameter of the cavity; a thermal insulation member is located in the receiving groove and comprises a first thermal insulation member and a second thermal insulation member; a detection conductor comprises a first conductor and a second conductor, the first conductor and the second conductor are electrically connected, the second conductor is plugged into the second thermal insulation member and the second end extends out of the second thermal insulation member and the shell, the first conductor is plugged into the first thermal insulation member, and an annular flange is protruding on the circumferential surface of the second conductor near the end of the first conductor, the flange is located between the first thermal insulation member and the second thermal insulation member and forms a labyrinth seal; a pressing member is connected to the first end of the shell and is configured to press the thermal insulation member into the receiving groove.
[0033] The high temperature and high pressure radio frequency admittance level switch probes of some embodiments of the present disclosure are described below through specific examples.
[0034] like Figures 1 to 3 As shown, the high temperature and high pressure radio frequency admittance level switch probe comprises a housing 1, a power supply module and a detection conductor 5, wherein the first end of the detection conductor 5 is located in the housing 1, and the second end of the detection conductor 5 extends out of the housing 1 and contacts the medium to be measured. The power supply module is used to supply power to the detection conductor 5.
[0035] The shell 1 is provided with a cavity 11 and a receiving groove 12 which are interconnected along the axis. The receiving groove 12 is located at the first end of the shell 1. The diameter of the receiving groove 12 is larger than the diameter of the cavity 11, so that a limit surface is formed at the bottom of the receiving groove 12. The second end of the shell 1 is fixedly connected to the container wall (such as a threaded connection) so that the RF admittance level switch probe remains stable.
[0036] A heat insulating member is provided in the receiving groove 12 to reduce the efficiency of heat transfer from the cavity 11 to the outside. Specifically, the heat insulating member includes a first heat insulating member 2 and a second heat insulating member 3, both of which are located in the receiving groove 12, and the second heat insulating member 3 abuts against the bottom of the receiving groove 12.
[0037] The detection conductor 5 is inserted into and passes through the first thermal insulation member 2 and the second thermal insulation member 3, and then extends out from the second thermal insulation member 3 and the shell 1. An annular flange 53 is provided on the circumferential surface of the detection conductor 5, and the flange 53 is located between the first thermal insulation member 2 and the second thermal insulation member 3, and is clamped by the first thermal insulation member 2 and the second thermal insulation member 3. Grooves are provided on the end surfaces of the first thermal insulation member 2 and the second thermal insulation member 3 that are close to each other, for accommodating the flange 53. In this way, a labyrinth-shaped (specifically U-shaped in the example of the present invention) splicing surface is formed at the first thermal insulation member 2, the second thermal insulation member 3 and the flange 53 to form a labyrinth seal, reducing the possibility of gas leakage along the thermal insulation member and the detection conductor 5, thereby improving the ultimate pressure resistance of the RF admittance level switch probe, and also helping to reduce the heat conduction efficiency to improve the ultimate tolerance temperature of the RF admittance switch.
[0038] The first end opening of the shell 1 may be provided with a pressing member 6, which is connected to the shell 1 (e.g., threaded or clamped), and a portion of the pressing member 6 is inserted into the receiving groove 12 to compress the first thermal insulation member 2, so that the first thermal insulation member 2 and the second thermal insulation member 3 are slightly deformed, thereby achieving a better sealing effect. The better the sealing effect inside the RF admittance level switch probe, the less likely the gas in the cavity 11 will overflow through the first thermal insulation member 2 and the second thermal insulation member 3, the better the ultimate pressure resistance of the RF admittance level switch probe, and the higher the ultimate tolerance temperature.
[0039] The housing 1 is further provided with a cap 7, which is connected to one end (i.e., the first end) of the housing 1 where the receiving groove 12 is provided, so as to form a closed space to protect the pressing member 6 and the detection conductor 5. The cap 7 can also be used to lead out a wire, which is electrically connected to the detection conductor 5, so as to supply power to the detection conductor 5 from the outside. For example, the cap 7 is threadedly connected to the housing 1.
[0040] The thermal insulation member also includes a seal 4, which is located between the flange 53 and the second thermal insulation member 3. A conical groove is provided at the end of the second thermal insulation member 3 close to the seal 4, and a conical portion is provided at one end of the seal 4 and the second thermal insulation member 3, and the conical portion cooperates with the conical groove. When the pressing member 6 squeezes the first thermal insulation member 2, the force on the mating surface of the seal 4 and the second thermal insulation member 3 is more uniform, and better sealing performance can be achieved. At the same time, the second thermal insulation member 3 can squeeze the seal 4 inwardly to deform the seal 4 and press the detection conductor 5, and the seal 4 squeezes the second thermal insulation member 3 outwardly to deform the second thermal insulation member 3 and press the inner wall of the shell 1, thereby improving the sealing performance of the RF admittance level switch probe.
[0041] A sealing ring may also be provided between the sealing member 4 and the second thermal insulation member 3 to further enhance the sealing degree between the sealing member 4 and the second thermal insulation member 3 .
[0042] In some examples, the detection conductor 5 includes a first conductor 51 and a second conductor 52, the first conductor 51 and the second conductor 52 are electrically connected, the second conductor 52 is plugged into the second thermal insulation member 3 and the second end extends out of the second thermal insulation member 3 and the housing 1, and the first conductor 51 is plugged into the first thermal insulation member 2. The detection conductor 5 adopts a method of separately arranging the first conductor 51 and the second conductor 52, which can reduce the force on the first conductor 51 and the second conductor 52 under the extrusion of the seal 4, and reduce the possibility of the first conductor 51 and the second conductor 52 being deformed by extrusion. At the same time, the split arrangement of the detection conductor 5 is also convenient for installation. For example, the first conductor 51 and the second conductor 52 are threaded or plugged.
[0043] In addition, the extreme tolerance temperature of the RF admittance level switch probe can also be increased by lowering the temperature of the housing 1. In a specific example of the present invention, a heat sink 13 is provided on the circumference of the housing 1 to accelerate the heat dissipation speed of the housing 1 and lower the temperature of the housing 1 to increase the extreme tolerance temperature of the RF admittance level switch probe.
[0044] In addition, if Figure 4 As shown, an isolator 14 may also be provided in the cavity 11, and the detection conductor passes through the isolator 14. The isolator 14 divides the cavity 11 into a first cavity 111 and a second cavity 112, the first cavity 111 is close to the receiving groove 12, and the isolator 14 is configured to isolate the first cavity 111 and the second cavity 112, thereby reducing the efficiency of heat transfer from the second cavity 112 to the first cavity 111, thereby reducing the temperature of the housing 1 and the detection conductor 5, thereby improving the extreme tolerance temperature of the radio frequency admittance level switch probe.
[0045] A first interface and a second interface may also be provided on the housing 1, and the first interface and the second interface are connected to the first cavity 111 and connected to a cooling medium. The cooling medium is introduced into one of the first interface and the second interface and flows out from the other, so as to cool the detection conductor 5 and the housing 1, and improve the extreme tolerance temperature of the RF admittance level switch probe. For example, the cooling medium is low-temperature or normal-temperature air, or water.
[0046] In summary, the radio frequency admittance level switch probe provided by the present invention has at least the following advantages:
[0047] (1) A labyrinth-shaped joint surface is formed at the first thermal insulation member 2, the second thermal insulation member 3 and the flange 53 to form a labyrinth seal, thereby reducing the possibility of gas leakage along the thermal insulation member and the detection conductor 5, thereby improving the ultimate pressure resistance of the radio frequency admittance level switch probe, and also helping to reduce the heat conduction efficiency to improve the ultimate tolerance temperature of the radio frequency admittance switch;
[0048] (2) The detection conductor 5 includes a first conductor 51 and a second conductor 52, the first conductor 51 and the second conductor 52 are electrically connected, the second conductor 52 is plugged into the second thermal insulation member 3 and the second end thereof extends out of the second thermal insulation member 3 and the housing 1, and the first conductor 51 is plugged into the first thermal insulation member 2. This reduces the possibility of the first conductor 51 and the second conductor 52 being squeezed and deformed, and also facilitates installation.
[0049] So far, the technical solutions of the present invention have been described in conjunction with the preferred embodiments shown in the accompanying drawings. However, it is easy for those skilled in the art to understand that the protection scope of the present invention is obviously not limited to these specific embodiments. Without departing from the principle of the present invention, those skilled in the art can make equivalent changes or substitutions to the relevant technical features, and the technical solutions after these changes or substitutions will fall within the protection scope of the present invention.
Claims
1. A high temperature and high pressure radio frequency admittance level switch probe, characterized in that: include: A housing (1) is provided with a cavity (11) and a receiving groove (12) along an axis, wherein the receiving groove (12) is located at one end of the cavity (11), and the diameter of the receiving groove (12) is greater than the diameter of the cavity (11); A heat insulating member, located in the containing groove (12), comprising a first heat insulating member (2) and a second heat insulating member (3); A detection conductor (5), comprising a first conductor (51) and a second conductor (52), wherein the first conductor (51) and the second conductor (52) are electrically connected, the second conductor (52) is plugged into the second thermal insulation member (3) and the second end thereof protrudes out of the second thermal insulation member (3) and the housing (1), the first conductor (51) is plugged into the first thermal insulation member (2), an annular flange (53) is protruding from the peripheral surface of the second conductor (52) near the end of the first conductor (51), the flange (53) is located between the first thermal insulation member (2) and the second thermal insulation member (3) and forms a labyrinth seal; A pressing member (6) is connected to the first end of the shell (1) and is configured to press the heat insulating member into the containing groove (12).
2. The high temperature and high pressure radio frequency admittance level switch probe according to claim 1, characterized in that: The first conductor (51) and the second conductor (52) are threadedly connected.
3. The high temperature and high pressure radio frequency admittance level switch probe according to claim 1, characterized in that: The thermal insulation member further comprises a sealing member (4), wherein the sealing member (4) is located between the flange (53) and the second thermal insulation member (3), a conical groove is provided at an end of the second thermal insulation member (3) close to the sealing member (4), and one end of the sealing member (4) facing the second thermal insulation member (3) is provided with a conical portion that matches the conical groove.
4. The high temperature and high pressure radio frequency admittance level switch probe according to claim 3, characterized in that: A sealing ring is provided between the sealing member (4) and the tapered groove.
5. The high temperature and high pressure radio frequency admittance level switch probe according to claim 1, characterized in that: The peripheral surface of the housing (1) is provided with heat sinks (13).
6. The high temperature and high pressure radio frequency admittance level switch probe according to claim 1, characterized in that: An isolating member (14) is disposed in the cavity (11), and the isolating member (14) divides the cavity (11) into a first cavity (111) and a second cavity (112), wherein the first cavity (111) is close to the containing groove (12), and the isolating member (14) is configured to isolate the first cavity (111) and the second cavity (112).
7. The high temperature and high pressure radio frequency admittance level switch probe according to claim 6, characterized in that: The housing (1) is provided with a first interface and a second interface, the first interface and the second interface being in communication with the first cavity (111) and connected to a cooling medium.
8. The high temperature and high pressure radio frequency admittance level switch probe according to claim 1, characterized in that: The high-temperature and high-pressure radio frequency admittance level switch probe further comprises a cover cap (7), wherein the cover cap (7) is connected to one end of the housing (1) where the receiving groove (12) is provided.
Citation Information
Patent Citations
High-temperature-resistant tuning fork material level switch
CN220322491U
Industrial detection probe adopting semiconductor refrigeration process
CN221280291U