A temperature compensation method for rapid thermal processing equipment

Abstract

The present invention provides a temperature compensation method for a rapid thermal processing device, wherein multiple groups of temperature measurement points are distributed in the device, and the multiple groups of temperature measurement points correspond one-to-one to multiple heating areas of a target product. The method comprises: obtaining in advance for each type of the target product, the corresponding relationship between the temperature deviation corresponding to each group of the temperature measurement points and the number of target products of the type processed when the rapid thermal processing device processes the target product of the type alone within a test calibration cycle; based on the number of target products of various types processed by the rapid thermal processing device within the current calibration cycle, determining the current temperature deviation corresponding to each group of the temperature measurement points according to the corresponding relationship; based on the current temperature deviation corresponding to each group of the temperature measurement points, compensating the current measured temperature corresponding to each group of the temperature measurement points. The present invention can improve the accuracy of temperature measurement in a rapid thermal processing process.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor manufacturing, and in particular to a temperature compensation method for rapid thermal processing equipment. Background Art

[0002] In the semiconductor manufacturing process, rapid thermal processing (RTP) equipment is used to quickly and uniformly heat the wafer. It is usually used in dopant activation and diffusion after ion implantation, annealing after forming metal silicide, and annealing of gate oxide layer.

[0003] In the rapid thermal processing process, a single wafer is placed in a closed reaction chamber, and the wafer is heated using a specific heat source and a preset heating program to quickly reach the desired temperature. In terms of temperature control, the temperature range of the rapid thermal processing process is usually between 180°C and 1200°C, and the temperature deviation is usually required to be less than 1°C. A pyrometer is generally used to measure the process temperature. However, as the number of wafers processed by the equipment increases, the pyrometer in the equipment will offset or be contaminated, affecting the accuracy of the temperature measurement. Therefore, it is necessary to compensate for this temperature deviation to improve the accuracy of the process temperature control in the reaction chamber. Summary of the invention

[0004] In view of the above-mentioned deficiencies in the prior art, the present invention provides a temperature compensation method for rapid thermal processing equipment to improve the temperature measurement accuracy in the rapid thermal processing process.

[0005] In order to achieve the above object, the present invention adopts the following technical solutions:

[0006] A temperature compensation method for a rapid thermal processing device, wherein a plurality of groups of temperature measurement points are distributed in the rapid thermal processing device, wherein the plurality of groups of temperature measurement points correspond one-to-one to a plurality of heating areas of a target product, the method comprising:

[0007] For each type of the target product, obtaining in advance the corresponding relationship between the temperature deviation corresponding to each group of the temperature measurement points and the processing quantity of the target product of this type when the rapid thermal processing equipment processes the target product of this type alone within a test calibration cycle;

[0008] Based on the number of various types of the target products processed by the rapid thermal processing equipment in the current calibration cycle, the current temperature deviations corresponding to the temperature measurement points of each group are determined according to the corresponding relationship;

[0009] Based on the current temperature deviation corresponding to each group of the temperature measurement points, the current measurement temperature corresponding to each group of the temperature measurement points is compensated.

[0010] Furthermore, when the rapid thermal processing equipment processes the same type of target products in the current calibration cycle, the steps of determining the current temperature deviation corresponding to each group of temperature measurement points are as follows:

[0011] The total number of target products processed during the current calibration period is substituted into the corresponding relationship to calculate the current temperature deviation corresponding to each group of temperature measurement points.

[0012] Furthermore, when the rapid thermal processing equipment processes different types of target products in the current calibration cycle, the steps of determining the current temperature deviation corresponding to each group of temperature measurement points are as follows:

[0013] For each type of the target product processed in the current calibration cycle, the total number of target products of this type processed is obtained, and the total number of target products of this type processed is substituted into the corresponding relationship to calculate the temperature deviations corresponding to each group of temperature measurement points when the rapid thermal processing equipment processes the target product of this type to the total number of processed products;

[0014] For each group of the temperature measurement points, the temperature deviations corresponding to the group of temperature measurement points when the corresponding type of the target product is processed to the corresponding total number of processing within the current calibration cycle are added to obtain the current temperature deviations corresponding to the group of temperature measurement points.

[0015] Furthermore, the temperature deviation corresponding to the temperature measurement points of the i-th group is The corresponding relationship between the processing quantity x of the target product of the corresponding type is as follows:

[0016]

[0017] in, are the fitting parameters.

[0018] Furthermore, the obtaining of the correspondence between the temperature deviations corresponding to each group of the temperature measurement points and the processing quantity of the target products of the type when the rapid thermal processing equipment processes the target products of the type alone within the test calibration cycle includes performing the following steps for each group of the temperature measurement points:

[0019] Pre-acquire a mapping function between the standard temperature corresponding to the temperature measurement points of the corresponding group and the standard target parameters corresponding to the heating area when processing the target product of the corresponding type;

[0020] For each corresponding type of the target product processed within the test calibration cycle, the following steps are performed: detecting the actual target parameters of the target product corresponding to the heating area, obtaining the measured temperatures corresponding to the corresponding group of temperature measurement points, and determining the standard target parameters corresponding to the measured temperatures according to the mapping function, and then determining the temperature deviations corresponding to the corresponding group of temperature measurement points based on the obtained standard target parameters and the actual target parameters;

[0021] A corresponding relationship between the temperature deviation corresponding to the temperature measurement points of the corresponding group and the processing quantity of the target product of the corresponding type is established.

[0022] Furthermore, the target parameters are detected in a detection device, and a plurality of groups of parameter detection points are distributed in the detection device, wherein the plurality of groups of parameter detection points correspond one-to-one to a plurality of heating areas of the target product.

[0023] Furthermore, the target parameter is the sheet resistivity or the thickness of the surface oxide film of the target product.

[0024] Further, the multiple heating areas of the target product include: multiple areas sequentially surrounding the central axis of the target product from the inside to the outside;

[0025] The multiple groups of temperature measurement points and parameter detection points are respectively distributed on multiple concentric circles centered on the central axis of the target product.

[0026] Furthermore, the heating power corresponding to each heating area of ​​the target product can be controlled individually.

[0027] Furthermore, after compensating the current measured temperatures corresponding to each group of the temperature measurement points, the method further includes:

[0028] Based on the compensated current measured temperature, a closed-loop control is performed on the heating power corresponding to the heating area.

[0029] By adopting the above technical solution, the present invention has the following beneficial effects:

[0030] The present invention obtains the corresponding relationship between the temperature deviation corresponding to each group of temperature measurement points and the processing quantity of the target product of the corresponding type in advance, and then determines the current temperature deviation corresponding to each group of temperature measurement points based on the number of target products of various types processed by the rapid thermal processing equipment in the current calibration cycle according to the corresponding relationship, and compensates the current measurement temperature corresponding to each group of temperature measurement points based on the current temperature deviation corresponding to each group of temperature measurement points, thereby improving the measurement accuracy of each group of temperature measurement points, and further improving the temperature measurement accuracy of the rapid thermal processing process, which is beneficial to ensuring the yield of the wafer. In addition, the present invention can predict the current temperature deviation corresponding to each group of temperature measurement points based on the corresponding relationship between the historical temperature deviation corresponding to each group of temperature measurement points obtained in advance and the processing quantity of the target product of the corresponding type, thereby achieving the purpose of monitoring the entire process, reducing the detection frequency of the detection equipment, improving the process stability, and improving the production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 A schematic diagram of the distribution of heating elements in the rapid thermal processing equipment of the present invention;

[0032] Figure 2 It is a schematic diagram of the distribution of multiple groups of temperature measurement points along different radii in the present invention;

[0033] Figure 3 A flow chart of a temperature compensation method for rapid thermal processing equipment according to the present invention;

[0034] Figure 4 It is a schematic diagram of the distribution of multiple groups of parameter detection points along different radii in the detection device of the present invention. DETAILED DESCRIPTION

[0035] In order to make the purpose, technical scheme and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0036] The terms used in the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present disclosure. The singular forms "a", "the" and "the" used in the present disclosure and the appended claims are also intended to include plural forms unless the context clearly indicates other meanings. It should also be understood that the term "and / or" used herein refers to and includes any or all possible combinations of one or more associated listed items.

[0037] In the rapid thermal processing process, the wafer needs to be heated in a closed loop at a higher temperature set point for a predetermined period of time. However, as the number of wafers processed by the equipment increases, the temperature sensors in the equipment (such as pyrometers) will gradually shift or become contaminated, thus affecting the accuracy of temperature measurement. Therefore, it is necessary to compensate for this temperature deviation to improve the accuracy of process temperature control in the reaction chamber and increase the output of qualified wafers of the equipment.

[0038] Based on this, the present invention provides a temperature compensation method for rapid thermal processing equipment.

[0039] like Figure 1 As shown, the rapid thermal processing equipment of the present invention uses a plurality of heating elements 10 (such as heating lamps) to perform full radiation heating on the target product (generally a wafer product). Since the wafer rotates during the rapid thermal processing process, these heating elements 10 form a plurality of heating areas centered on the central axis of the wafer. These heating areas are specifically a plurality of areas surrounding the central axis of the wafer from the inside to the outside. For example, Figure 1 Specifically, 7 heating zones can be formed, which are marked as Z1, Z2, Z3, Z4, Z5, Z6 and Z7 from the center to the edge. The heating power can be adjusted and controlled for one or several heating zones separately to achieve the purpose of temperature uniformity adjustment. Among them, Z1 is a circular heating zone, and Z2~ Z7 are annular heating zones adjacent to each other. In a specific embodiment, when the processed wafer is a 12-inch wafer, the radius of Z1 is 12mm, and the outer diameters of Z2~ Z7 are 25.4mm, 50.8mm, 76.2mm, 101.6mm, 127mm and 140mm respectively. It should be understood that the present invention does not limit the size of the heating zone, and the size of each heating zone can be adjusted according to specific process conditions.

[0040] In the present invention, in order to achieve accurate temperature control of the rapid thermal processing process, a plurality of temperature measurement points are distributed in the rapid thermal processing equipment, so that a temperature sensor (such as a pyrometer) can measure the temperature at the corresponding temperature measurement points. Preferably, the plurality of temperature measurement points are distributed on concentric circles centered on the central axis of the wafer, and the concentric circles correspond to the heating areas one by one. Specifically, Figure 2 As shown, the concentric circles are marked as T1, T2, T3, T4, T5, T6 and T7 from the center to the edge. When the processed wafer is a 12-inch wafer, the radii of T1~T7 can be 12mm, 25.4mm, 50.8mm, 76.2mm, 101.6mm, 127mm and 140mm, which correspond to the outer diameter of each heating area.

[0041] In an operative manner, the heating element 10 corresponding to each heating area is individually controlled by a heating control device, and the output current and output voltage of the heating control device determine the heating power of the corresponding heating area. The heating control device may be, for example, an IGBT or SCR, and the present invention does not impose any specific limitation on this.

[0042] Based on the above rapid thermal processing equipment, the present invention provides a temperature compensation method for rapid thermal processing equipment as follows Figure 3 As shown, the specific steps include:

[0043] S1, for each type of target product in at least one type of target product, obtain in advance the corresponding relationship between the temperature deviation corresponding to each group of temperature measurement points and the processing quantity of this type of target product when the rapid thermal processing equipment processes this type of target product alone within a calibration cycle (recorded as a test calibration cycle).

[0044] In the present invention, the type of the target product may be one or more pre-specified types. A calibration cycle refers to a period of time from when the accuracy of each temperature sensor is calibrated once to when the next calibration is performed.

[0045] For example, assuming that two types of target products, product 1 and product 2, are specified, the corresponding relationship between the temperature deviations corresponding to each group of temperature measurement points and the processing quantity of product 1 when the rapid thermal processing equipment processes product 1 alone within a test calibration cycle is first obtained; and then the corresponding relationship between the temperature deviations corresponding to each group of temperature measurement points and the processing quantity of product 2 when the rapid thermal processing equipment processes product 2 alone within a test calibration cycle is obtained. It should be understood that if there are several groups of temperature measurement points, several corresponding relationships can be obtained, that is, there is one corresponding relationship for each group of temperature measurement points.

[0046] Here, separate processing means that the corresponding type of product is processed continuously within the corresponding calibration period, and other types of products are not processed in the middle period. The corresponding relationship between the temperature deviation corresponding to each group of temperature measurement points obtained in this step and the processing quantity of the target product can reflect that: for every increase in the processing quantity of the target product, the temperature deviation corresponding to each group of temperature measurement points changes. Generally, within a calibration period, the more the number of processes, the greater the temperature deviation.

[0047] In an practicable manner, the temperature deviation corresponding to the i-th group of temperature measurement points obtained in this step is The corresponding relationship between the processing quantity x of the corresponding type of target product is as follows:

[0048]

[0049] in, are all fitting parameters, x=1,2,…,N, N is the maximum number of target products of the corresponding type to be processed.

[0050] S2, based on the number of various types of target products processed by the rapid thermal processing equipment in the current calibration cycle, the current temperature deviations corresponding to each group of temperature measurement points are determined according to the above-mentioned corresponding relationships.

[0051] It should be understood that the type of the target product processed in the current calibration cycle must be within the type range of the target product in step S1, that is, for the target product processed in the current calibration cycle, the aforementioned corresponding relationship must have been obtained for the target product in step S1. If other types of products are processed in the current calibration cycle, they are not within the scope of application of the present invention.

[0052] In one embodiment, the rapid thermal processing equipment processes the same type of target products in the current calibration cycle, and the steps for determining the current temperature deviation corresponding to each group of temperature measurement points are as follows: Substitute the total number of target products processed in the current calibration cycle into the corresponding relationship, and calculate the current temperature deviation corresponding to each group of temperature measurement points.

[0053] For example, if only product 1 is processed in the current calibration cycle, the total number of product 1 processed is substituted into the corresponding relationship between the temperature deviation corresponding to each group of temperature measurement points obtained in step S1 and the number of product 1 processed, that is, the current temperature deviation corresponding to each group of temperature measurement points is obtained.

[0054] In another embodiment, the rapid thermal processing equipment processes different types of target products in the current calibration cycle, and the steps of determining the current temperature deviation corresponding to each group of temperature measurement points are as follows:

[0055] First, for each type of target product processed in the current calibration cycle, the total number of processing of this type of target product (including the product currently being processed) is obtained, and the total number of processing of this type of target product is substituted into the corresponding relationship to calculate the temperature deviation corresponding to each group of temperature measurement points when the rapid thermal processing equipment processes this type of target product to the corresponding total number of processing.

[0056] Then, for each group of temperature measurement points, the temperature deviations corresponding to the group of temperature measurement points when the corresponding type of target product is processed to the corresponding total number of processing in the current calibration cycle are added to obtain the current temperature deviation corresponding to the group of temperature measurement points.

[0057] For example, if two target products, Product 1 and Product 2, are processed in the current calibration cycle, firstly, the total number of product 1 processed is substituted into the corresponding relationship between the temperature deviation corresponding to each group of temperature measurement points and the processing number of product 1, that is, the temperature deviation corresponding to each group of temperature measurement points when product 1 is processed to the corresponding total number of processing is obtained; at the same time, the total number of product 2 processed is substituted into the corresponding relationship between the temperature deviation corresponding to each group of temperature measurement points and the processing number of product 2, that is, the temperature deviation corresponding to each group of temperature measurement points when product 2 is processed to the corresponding total number of processing is obtained.

[0058] Then, for each group of temperature measurement points, the temperature deviations corresponding to the group of temperature measurement points when product 1 and product 2 are processed to the corresponding total number of processing in the current calibration cycle are added together to obtain the current temperature deviation corresponding to the group of temperature measurement points. For example, assuming that the total number of product 1 processed in the current calibration cycle is 100 and the total number of product 2 processed is 200, and according to the above correspondence, the temperature deviation corresponding to the i-th group of temperature measurement points when product 1 is processed to 100 is M1, and the temperature deviation corresponding to the i-th group of temperature measurement points when product 2 is processed to 200 is M2, then the current temperature deviation ∆M corresponding to the i-th group of temperature measurement points is M1+M2.

[0059] If more than two types of target products are processed in the current calibration cycle, the calculation principle is similar and will not be described here.

[0060] S3, based on the current temperature deviation corresponding to each group of temperature measurement points, compensating the current measurement temperature corresponding to each group of temperature measurement points.

[0061] Specifically, for the i-th group of temperature measurement points, assuming that the corresponding current temperature deviation obtained according to step S2 is ∆M, and the current measurement temperature actually measured is M (M is the measurement average value of all temperature measurement points in the group), the current measurement temperature M is compensated by adding the corresponding current measurement temperature M to the current temperature deviation ∆M to obtain the compensated current measurement temperature M+∆M.

[0062] S4, based on the compensated current measured temperature, a closed-loop control is performed on the heating power corresponding to the corresponding heating area.

[0063] Specifically, based on the current measured temperature of the compensated i-th group of temperature measurement points, the heating power corresponding to the i-th heating area is closed-loop controlled, for example, by adjusting the current and voltage of the corresponding heating element.

[0064] In an practicable manner, step S2 includes performing the following steps for each group of temperature measurement points:

[0065] S21, pre-acquire a mapping function between the standard temperature corresponding to the group of temperature measurement points and the standard target parameters of the corresponding heating area when processing the corresponding type of target product under standard process conditions.

[0066] Specifically, after the heat treatment process is completed, the target product is transferred to the detection equipment for target parameter detection. Among them, there are multiple groups of parameter detection points distributed in the detection equipment, and the multiple groups of parameter detection points also correspond one-to-one to multiple heating areas of the target product, that is, they also correspond one-to-one to multiple groups of temperature measurement points. Figure 4 As shown, multiple groups of parameter detection points are distributed on multiple concentric circles centered on the central axis of the target product (the concentric circles are marked as P1, P2, P3, P4, P5, P6 and P7 from the center to the edge), and the radius of each group of concentric circles is consistent with the radius of each group of temperature measurement point concentric circles.

[0067] The mapping function obtained in this step can reflect: when the standard temperature corresponding to the corresponding group of temperature measurement points changes by 1°C, the change amount of the standard target parameter of the corresponding heating area can be obtained, and then the change rate of the standard target parameter of the corresponding heating area relative to the corresponding standard temperature can be obtained.

[0068] In an operative manner, the target parameter may be the sheet resistivity of the target product corresponding to the heating area, the thickness of the surface oxide film or other parameters, and the present invention does not impose any limitation on this. For example, the change rate of the standard sheet resistivity of the corresponding heating area relative to the corresponding standard temperature may be 1.5Ω·cm -2 ℃ -1 , or the change rate of the standard surface oxide film thickness of the corresponding heating area relative to the corresponding standard temperature can be 1A·℃ -1 .

[0069] S22, for each corresponding type of target product processed within the test calibration cycle, execute: detect the actual target parameters of the corresponding heating area of ​​the target product, and simultaneously obtain the measured temperature corresponding to the corresponding group of temperature measurement points, and determine the standard target parameters corresponding to the measured temperature according to the aforementioned mapping function, and then determine the temperature deviation corresponding to the corresponding group of temperature measurement points based on the obtained standard target parameters and actual target parameters.

[0070] For example, suppose the actual sheet resistivity of the target product corresponding to the heating area is detected to be 175Ω·cm -2 At the same time, according to the above mapping function, the standard square resistivity corresponding to the measured temperature of the corresponding group of temperature measurement points is 160Ω·cm -2 The change rate of the sheet resistivity relative to the corresponding standard temperature is determined to be 1.5Ω·cm -2 ℃ -1, then the temperature deviation corresponding to the corresponding group of temperature measurement points can be determined to be △T = (175-160) / 1.5 = 10℃

[0071] S23, establishing a corresponding relationship between the temperature deviation corresponding to the group of temperature measurement points and the processing quantity of the corresponding type of target product.

[0072] Specifically, the corresponding relationship is fitted according to the temperature deviations corresponding to the group of temperature measurement points when processing the xth corresponding type of target product, where x=1,2,…,N.

[0073] The present invention obtains the corresponding relationship between the temperature deviation corresponding to each group of temperature measurement points and the processing quantity of the target product of the corresponding type in advance, and then determines the current temperature deviation corresponding to each group of temperature measurement points based on the number of target products of various types processed by the rapid thermal processing equipment in the current calibration cycle according to the corresponding relationship, and compensates the current measurement temperature corresponding to each group of temperature measurement points based on the current temperature deviation corresponding to each group of temperature measurement points, thereby improving the measurement accuracy of each group of temperature measurement points, and further improving the temperature measurement accuracy of the rapid thermal processing process, which is beneficial to ensuring the yield of the wafer. In addition, the present invention can predict the current temperature deviation corresponding to each group of temperature measurement points based on the corresponding relationship between the historical temperature deviation corresponding to each group of temperature measurement points obtained in advance and the processing quantity of the target product of the corresponding type, thereby achieving the purpose of monitoring the entire process, reducing the detection frequency of the detection equipment, improving the process stability, and improving the production efficiency.

[0074] Although the specific embodiments of the present invention are described above, it should be understood by those skilled in the art that this is only for illustration and the protection scope of the present invention is defined by the appended claims. Those skilled in the art may make various changes or modifications to these embodiments without departing from the principles and essence of the present invention, but these changes and modifications all fall within the protection scope of the present invention.

Claims

1. A temperature compensation method for a rapid thermal processing device, wherein a plurality of groups of temperature measurement points are distributed in the rapid thermal processing device, wherein: The plurality of groups of temperature measurement points correspond one-to-one to the plurality of heating areas of the target product, wherein the method comprises: For each type of the target product, obtaining in advance the corresponding relationship between the temperature deviation corresponding to each group of the temperature measurement points and the processing quantity of the target product of this type when the rapid thermal processing equipment processes the target product of this type alone within a test calibration cycle; Based on the number of various types of the target products processed by the rapid thermal processing equipment in the current calibration cycle, the current temperature deviations corresponding to the temperature measurement points of each group are determined according to the corresponding relationship; Based on the current temperature deviations corresponding to the temperature measurement points in each group, compensating the current measurement temperatures corresponding to the temperature measurement points in each group; Wherein, when the rapid thermal processing equipment processes different types of target products in the current calibration cycle, the steps of determining the current temperature deviation corresponding to each group of temperature measurement points are as follows: For each type of the target product processed in the current calibration cycle, the total number of target products of this type processed is obtained, and the total number of target products of this type processed is substituted into the corresponding relationship to calculate the temperature deviations corresponding to each group of temperature measurement points when the rapid thermal processing equipment processes the target product of this type to the total number of processed products; For each group of the temperature measurement points, the temperature deviations corresponding to the group of temperature measurement points when the corresponding type of the target product is processed to the corresponding total number of processing within the current calibration cycle are added to obtain the current temperature deviations corresponding to the group of temperature measurement points.

2. The temperature compensation method according to claim 1, characterized in that: When the rapid thermal processing equipment processes the same type of target products in the current calibration cycle, the steps of determining the current temperature deviation corresponding to each group of temperature measurement points are as follows: The total number of target products processed during the current calibration period is substituted into the corresponding relationship to calculate the current temperature deviation corresponding to each group of temperature measurement points.

3. The temperature compensation method according to claim 1, characterized in that: The temperature deviation corresponding to the temperature measurement points of the i-th group The corresponding relationship between the processing quantity x of the target product of the corresponding type is as follows: in, are the fitting parameters.

4. The temperature compensation method according to claim 1, characterized in that: The obtaining of the correspondence between the temperature deviations corresponding to each group of the temperature measurement points and the number of target products of the type processed when the rapid thermal processing equipment processes the target product of the type alone within the test calibration cycle comprises performing the following steps for each group of the temperature measurement points: Pre-acquire a mapping function between the standard temperature corresponding to the temperature measurement points of the corresponding group and the standard target parameters corresponding to the heating area when processing the target product of the corresponding type; For each corresponding type of the target product processed within the test calibration cycle, the following steps are performed: detecting the actual target parameters of the target product corresponding to the heating area, obtaining the measured temperatures corresponding to the corresponding group of temperature measurement points, and determining the standard target parameters corresponding to the measured temperatures according to the mapping function, and then determining the temperature deviations corresponding to the corresponding group of temperature measurement points based on the obtained standard target parameters and the actual target parameters; A corresponding relationship between the temperature deviation corresponding to the temperature measurement points of the corresponding group and the processing quantity of the target product of the corresponding type is established.

5. The temperature compensation method according to claim 4, characterized in that: The target parameters are detected in a detection device, and a plurality of groups of parameter detection points are distributed in the detection device, wherein the plurality of groups of parameter detection points correspond one-to-one to a plurality of heating areas of the target product.

6. The temperature compensation method according to claim 5, characterized in that: The target parameter is the sheet resistivity or the thickness of the surface oxide film of the target product.

7. The temperature compensation method according to claim 5, characterized in that: The multiple heating areas of the target product include: multiple areas sequentially surrounding the central axis of the target product from the inside to the outside; The multiple groups of temperature measurement points and parameter detection points are respectively distributed on multiple concentric circles centered on the central axis of the target product.

8. The temperature compensation method according to claim 1, characterized in that: The heating power corresponding to each of the heating areas of the target product can be controlled individually.

9. The temperature compensation method according to claim 8, characterized in that: After compensating the current measured temperatures corresponding to each group of temperature measurement points, the method further includes: Based on the compensated current measured temperature, a closed-loop control is performed on the heating power corresponding to the heating area.

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