Solar cell structure

Abstract

The invention relates to the technical field of batteries, in particular to a solar battery structure. The solar cell structure includes: a substrate; the fine grids are located on one side of the substrate, the fine grids comprise first fine grids and second fine grids which extend in the second direction and are alternately arranged at intervals, and the first fine grids and the second fine grids penetrate through the multiple first areas and the multiple second areas; the insulating layer comprises a first insulating structure and a second insulating structure, the first insulating structure is located in the first area and located on the side, away from the substrate, of the first fine grid, and the second insulating structure is located in the second area and located on the side, away from the substrate, of the second fine grid; the conducting layer comprises a first conducting structure and a second conducting structure which are arranged at an interval, the first conducting structure is located in the first area, covers the first insulating structure and is located between the second fine grid and the substrate, and the second conducting structure is located in the second area; the second conductive structure covers the second insulating structure and is located between the first fine grid and the substrate.

Description

Technical Field

[0001] The present application relates to the field of battery technology, and in particular to a solar cell structure. Background Art

[0002] A solar cell is a semiconductor device that uses the photovoltaic effect to directly convert sunlight into electrical energy. When sunlight shines on a solar cell, photons excite electrons in the semiconductor material, causing them to transition from the valence band to the conduction band, forming photogenerated carriers. These carriers generate an electromotive force inside the semiconductor, which in turn forms a current in the external circuit, completing the conversion of light energy into electrical energy.

[0003] In the related art, in order to prevent leakage, the fine grid of the solar cell needs to be disconnected at the opposite-sex main grid. If the fine grid is not properly isolated from the opposite-sex main grid, an unnecessary current path may be formed, resulting in power loss and even possible damage to the battery. However, the design that the fine grid needs to be disconnected at the opposite-sex main grid inevitably increases the series resistance.

[0004] Therefore, at present, there is an urgent need for a solar cell structure that can reduce series resistance and ensure high photoelectric conversion efficiency. Summary of the invention

[0005] Based on this, it is necessary to provide a solar cell structure that can both reduce the series resistance of the solar cell structure and ensure that the solar cell structure has a high photoelectric conversion efficiency.

[0006] In order to achieve the above object, a solar cell structure is provided, wherein the solar cell structure has a first region and a second region, wherein the first region and the second region both extend along a first direction, and the first region and the second region are alternately arranged along a second direction, and the first direction intersects with the second direction, and the solar cell structure comprises:

[0007] substrate;

[0008] A fine gate is located at one side of the substrate, the fine gate includes a first fine gate and a second fine gate extending along the second direction and alternately arranged at intervals, the first fine gate and the second fine gate crossing a plurality of first regions and a plurality of second regions;

[0009] an insulating layer, comprising a first insulating structure and a second insulating structure, wherein the first insulating structure is located in the first region and on a side of the first fine gate away from the substrate, and the second insulating structure is located in the second region and on a side of the second fine gate away from the substrate;

[0010] The conductive layer includes a first conductive structure and a second conductive structure arranged at intervals, wherein the first conductive structure is located in the first region, covers the first insulating structure and is located between the second fine gate and the substrate, and the second conductive structure is located in the second region, covers the second insulating structure and is located between the first fine gate and the substrate.

[0011] In one embodiment, the solar cell structure further comprises:

[0012] A main gate is located on a side of the conductive layer away from the substrate and extends along the first direction, the main gate includes a first main gate and a second main gate, the first main gate is located in the second area and is connected to multiple first fine gates via the second conductive structure, the second main gate is located in the first area and is connected to multiple second fine gates via the first conductive structure.

[0013] In one embodiment, the conductive layer includes a third conductive structure and a fourth conductive structure, the third conductive structure is arranged corresponding to the first insulating structure, and the first fine gate is located between the first insulating structure and the third conductive structure, the fourth conductive structure is arranged corresponding to the second insulating structure, and the second fine gate is located between the second insulating structure and the fourth conductive structure.

[0014] In one embodiment, the first insulating structure extends from a surface of the first fine gate to a sidewall of the third conductive structure, and the second insulating structure extends from a surface of the second fine gate to a sidewall of the fourth conductive structure.

[0015] In one embodiment, there is a gap between adjacent first conductive structures and second conductive structures, and the gap at least partially exposes the first insulating structure and the second insulating structure.

[0016] In one embodiment, the solar cell structure further comprises:

[0017] A doped region is located between the fine gate and the substrate, the doped region includes a first doped region and a second doped region that are spaced and alternately arranged, the first doped region is located between the first fine gate and the substrate, the second doped region is located between the second fine gate and the substrate, and the gap at least exposes a portion of the first doped region and the second doped region.

[0018] In one embodiment, the first insulating structure extends from a surface of the first fine gate to a sidewall of the first doped region, and the second insulating structure extends from a surface of the second fine gate to a sidewall of the second doped region.

[0019] In one embodiment, the first conductive structure covers the surface and sidewalls of the first insulating structure away from the substrate and extends to the surface of the substrate, and the second conductive structure covers the surface and sidewalls of the second insulating structure away from the substrate and extends to the surface of the substrate.

[0020] In one embodiment, the first conductive structure further covers the surface and sidewalls of the second doped region in the first region away from the substrate, and the second conductive structure further covers the surface and sidewalls of the first doped region in the second region away from the substrate.

[0021] In one embodiment, the solar cell structure further comprises:

[0022] a doping layer, located on the other side of the substrate;

[0023] The low temperature passivation layer is located on a side of the doping layer away from the substrate.

[0024] The solar cell structure of the present application has the following beneficial effects: first, in the solar cell structure, the first conductive structure is arranged to cover the first insulating structure and be located between the second fine grid and the substrate, and the second conductive structure is arranged to cover the second insulating structure and be located between the first fine grid and the substrate, so that the surface of the obtained structure has a large-area conductive layer, which can not only play the role of transmitting current, but also reflect the light incident from the front, so as to achieve a higher photon utilization rate and improve the photoelectric conversion rate of the solar cell. Secondly, in the first region, the first conductive structure is isolated from the first fine grid by the first conductive structure, and in the second region, the second conductive structure is isolated from the second fine grid by the second conductive structure, so that the second main grid will not be electrically connected to the first fine grid, and the first main grid will not be electrically connected to the second fine grid, that is, the insulating layer can cover all the opposite-sex fine grids under the main grid, and then the fine grid does not need to be disconnected at the opposite-sex main grid, thereby reducing the series resistance. Subsequently, the first conductive structure and the second conductive structure are arranged in the solar cell structure to prevent the occurrence of an erroneous current path between the first conductive structure and the second conductive structure, thereby improving the safety of the battery. Finally, the solar cell structure does not need to set up a same-sex doping region under the main grid, which makes the solar cell structure simpler, reduces the risk of leakage, and also reduces the difficulty of the graphic process during preparation. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0026] Figure 1 is a three-dimensional schematic diagram of a solar cell structure provided in an embodiment;

[0027] Figure 2 is a cross-sectional schematic diagram of a solar cell structure provided in an embodiment;

[0028] Figure 3 Schematic diagram of a main grid provided in an embodiment.

[0029] Explanation of the accompanying drawings: solar cell structure-100; first region-110; second region-120; substrate-130; fine gate-140; first fine gate-141; second fine gate-142; insulating layer-150; first insulating structure-151; second insulating structure-152; conductive layer-160; first conductive structure-161; second conductive structure-162; third conductive structure-163; main gate-170; first main gate-171; second main gate-172; doping region-180; first doping region-181; second doping region-182; doping layer-190; low-temperature passivation layer-191; gap-200.

[0030] In order to better describe and illustrate the embodiments and / or examples of the inventions disclosed herein, reference may be made to one or more drawings. The additional details or examples used to describe the drawings should not be considered as limiting the scope of any of the disclosed inventions, the embodiments and / or examples currently described, and the best modes of these inventions currently understood. DETAILED DESCRIPTION

[0031] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present application are given in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0032] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0033] In each embodiment, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in each embodiment can be understood according to the specific situation.

[0034] It should be understood that when an element or layer is referred to as "on ...", "adjacent to ...", "connected to" or other elements or layers, it can be directly on other elements or layers, adjacent to them, connected to other elements or layers, or there can be intervening elements or layers. On the contrary, when an element is referred to as "directly on ...", "directly adjacent to ...", "directly connected to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers, doping types and / or parts, these elements, components, regions, layers, doping types and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, doping type or part from another element, component, region, layer, doping type or part. Therefore, without departing from the teaching of the present embodiment, the first element, component, region, layer, doping type or part discussed below can be represented as a second element, component, region, layer or part.

[0035] Spatial relationship terms such as "under", "below", "below", "under", "above", "above", etc., may be used herein to describe the relationship between an element or feature shown in the figures and other elements or features. It should be understood that in addition to the orientations shown in the figures, spatial relationship terms also include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is turned over, the element or feature described as "under other elements" or "under it" or "under it" will be oriented as "on" other elements or features. Therefore, the exemplary terms "under" and "under" may include both upper and lower orientations. In addition, the device may also include additional orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptors used herein are interpreted accordingly.

[0036] When used herein, the singular forms "a", "an", and "said / the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that when the terms "consisting of" and / or "comprising" are used in this specification, the presence of the features, integers, steps, operations, elements and / or parts can be determined, but the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups is not excluded. At the same time, when used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0037] Embodiments of the present application are described herein with reference to schematic diagrams that are ideal embodiments (and intermediate structures) of the present application, so that variations in the shapes shown due to, for example, manufacturing techniques and / or tolerances can be expected. Therefore, embodiments of the present application should not be limited to the specific shapes of the regions shown herein, but include shape deviations due to, for example, manufacturing techniques. The regions shown in the figures are schematic in nature, and their shapes do not represent the actual shapes of the regions of the device and do not limit the scope of the embodiments of the present application.

[0038] See also Figures 1 to 3 In one or more of the following embodiments and combinations thereof, a solar cell structure 100 is provided. As an example, the solar cell may be a back-contact solar cell or a heterojunction back-contact solar cell, etc.

[0039] The solar cell structure 100 has a first region 110 and a second region 120, both of which extend along a first direction (for example, the first direction is the Y direction), and the first region 110 and the second region 120 are alternately arranged along a second direction (for example, the first direction is the X direction). As an example, the first direction and the second direction may intersect. For example, the first direction and the second direction may be perpendicular.

[0040] The solar cell structure 100 provided in this embodiment may include at least a substrate 130 , a fine grid 140 , an insulating layer 150 and a conductive layer 160 .

[0041] See also Figure 2 The material of the substrate 130 may include silicon, silicon germanium, silicon germanium carbon, etc. The substrate 130 may have a first side and a second side that are arranged opposite to each other. The structures such as the fine gate 140, the insulating layer 150 and the conductive layer 160 may be located on the first side of the substrate 130, and the second side of the substrate 130 may be provided with a doping layer 190 and a low-temperature passivation layer 191, etc.

[0042] See also Figure 1 The fine gate 140 may be located on one side of the substrate 130. For example, the fine gate 140 may be located on a first side of the substrate 130. As an example, the material of the fine gate 140 may include a conductive material such as aluminum, gold, or copper.

[0043] The fine grid 140 may include a first fine grid 141 and a second fine grid 142 extending along the second direction and alternately arranged at intervals. The first fine grid 141 and the second fine grid 142 may pass through the plurality of first regions 110 and the plurality of second regions 120. As an example, one of the first fine grid 141 and the second fine grid 142 is a positive electrode fine grid and the other is a negative electrode fine grid, which is not specifically limited in this embodiment.

[0044] See also Figure 3 The insulating layer 150 may be located on a side of the fine gate 140 away from the substrate 130. As an example, the material of the insulating layer 150 may include insulating materials such as silicon oxide, silicon nitride, aluminum oxide, or silicon oxynitride.

[0045] The insulating layer 150 may include a first insulating structure 151 and a second insulating structure 152. The first insulating structure 151 may be located in the first region 110 and on a side of the first fine gate 141 away from the substrate 130, and the second insulating structure 152 may be located in the second region 120 and on a side of the second fine gate 142 away from the substrate 130. As an example, in the first region 110, the first insulating structure 151 may cover a surface and a sidewall of the first fine gate 141 away from the substrate 130. In another example, in the second region 120, the second insulating structure 152 may cover a surface and a sidewall of the second fine gate 142 away from the substrate 130.

[0046] The material of the conductive layer 160 may include a transparent conductive oxide (TCO), etc. As an example, the material of the conductive layer 160 may include indium tin oxide, indium zinc oxide, aluminum zinc oxide, antimony tin oxide, etc.

[0047] The conductive layer 160 may include a first conductive structure 161 and a second conductive structure 162 that are spaced apart. The first conductive structure 161 is located in the first region 110 and extends in the same direction as the first region 110. The first conductive structure 161 may cover the first insulating structure 151 and is located between the second fine gate 142 and the substrate 130. The second conductive structure 162 is located in the second region 120 and extends in the same direction as the second region 120. The second conductive structure 162 may cover the second insulating structure 152 and is located between the first fine gate 141 and the substrate 130. It can be understood that in the first region 110, the first conductive structure 161 is isolated from the first fine gate 141 by the first conductive structure 161. In the second region 120, the second conductive structure 162 is isolated from the second fine gate 142 by the second conductive structure 162.

[0048] Also, see Figure 3The solar cell structure 100 may further include a main grid 170. The main grid 170 may be located on a side of the conductive layer 160 away from the substrate 130. The material of the main grid 170 may include conductive materials such as silver and copper.

[0049] The main gate 170 includes a first main gate 171 and a second main gate 172. It can be understood that, as an example, the first main gate 171 has the same polarity as the first fine gate 141, and the second main gate 172 has the same polarity as the second fine gate 142. The first main gate 171 and the second main gate 172 extend in a first direction. For example, the extension direction of the first main gate 171 is perpendicular to the extension direction of the first fine gate 141, and the extension direction of the second main gate 172 is perpendicular to the extension direction of the second fine gate 142.

[0050] Specifically, the first main gate 171 is located in the second region 120 and is connected to the plurality of first fine gates 141 via the second conductive structure 162. The second main gate 172 is located in the first region 110 and is connected to the plurality of second fine gates 142 via the first conductive structure 161. As an example, the number of insulating layers 150 is half the number of main gates 170.

[0051] In this embodiment, firstly, a first conductive structure 161 is provided to cover the first insulating structure 151 and be located between the second fine grid 142 and the substrate 130, and a second conductive structure 162 is provided to cover the second insulating structure 152 and be located between the first fine grid 141 and the substrate 130, so that the surface of the obtained structure has a nearly full-surface conductive layer 160. The large-area conductive layer 160 can not only transmit current but also reflect light incident from the front, thereby achieving higher photon utilization and improving the photoelectric conversion rate of the solar cell. Secondly, in this embodiment, in the first region 110, the first conductive structure 161 is isolated from the first fine grid 141 by the first insulating structure 151, and in the second region 120, the second conductive structure 162 is isolated from the second fine grid 142 by the second insulating structure 152, so that the second main grid 172 will not be electrically connected to the first fine grid 141, and the first main grid 171 will not be electrically connected to the second fine grid 142, that is, the insulating layer 150 can cover all the opposite-sex fine grids under the main grid 170, and then the fine grid 140 does not need to be disconnected at the opposite-sex main grid 170, the ability to collect current is stronger and the series resistance is reduced. Then, in this embodiment, the first conductive structure 161 and the second conductive structure 162 are spaced apart to prevent the occurrence of an erroneous current path between the first conductive structure 161 and the second conductive structure 162, thereby improving the safety of the battery. Finally, the solar cell structure 100 provided in this embodiment does not need to set a same-sex doping region under the main grid 170, which makes the solar cell structure 100 of this embodiment simpler, reduces the risk of leakage, and also reduces the difficulty of the patterning process during preparation.

[0052] In one embodiment, the conductive layer 160 includes a third conductive structure 163 and a fourth conductive structure (not shown), the third conductive structure 163 may be disposed corresponding to the first insulating structure 151, and the first fine gate 141 is located between the first insulating structure 151 and the third conductive structure 163. The fourth conductive structure may be disposed corresponding to the second insulating structure 152, and the second fine gate 142 is located between the second insulating structure 152 and the fourth conductive structure.

[0053] The materials of the first conductive structure 161, the second conductive structure 162, the third conductive structure 163 and the fourth conductive structure may be the same. As an example, the materials of the first conductive structure 161, the second conductive structure 162, the third conductive structure 163 and the fourth conductive structure may all be indium tin oxide or the like.

[0054] The first fine gate 141 may be connected to the third conductive structure 163, thereby facilitating current transmission of the first fine gate 141. The second fine gate 142 may be connected to the fourth conductive structure, thereby facilitating current transmission of the second fine gate 142. Specifically, the first insulating structure 151 extends from the surface of the first fine gate 141 to the sidewall of the third conductive structure 163, and the second insulating structure 152 extends from the surface of the second fine gate 142 to the sidewall of the fourth conductive structure.

[0055] In this embodiment, part of the first fine grid 141 and part of the second fine grid 142 can be located between the double-layer conductive structure, thereby improving the carrier concentration of the solar cell structure 100. As an example, in a heterojunction back contact cell, the thickness of the conductive layer 160 affects the carrier concentration, but also affects its contact with the electrode (fine grid 140 and main grid 170). In this embodiment, a local double-layer conductive structure can be formed without affecting the thickness of the conductive layer 160, thereby improving the carrier concentration. Furthermore, in this embodiment, the first conductive structure 161 and the second conductive structure 162 have a large area, which enables the solar cell structure 100 to have a large current density, which is conducive to improving the performance of the solar cell structure 100. In addition, in this embodiment, by setting the first insulating structure 151 to extend to the side wall of the third conductive structure 163 and the second insulating structure 152 to extend to the side wall of the fourth conductive structure, the third conductive structure 163 can be prevented from being connected to the first conductive structure 161, and the fourth conductive structure can be prevented from being connected to the second conductive structure 162, thereby preventing the solar cell structure 100 from being short-circuited.

[0056] In one embodiment, see Figure 3 There is a gap 200 between the adjacent first conductive structures 161 and the second conductive structures 162. The gap 200 at least exposes a portion of the first insulating structure 151 and the second insulating structure 152. The specific size of the gap 200 is not limited in this embodiment.

[0057] In this embodiment, by setting the gap 200 between the adjacent first conductive structures 161 and the second conductive structures 162, at least a portion of the first insulating structure 151 and the second insulating structure 152 is exposed, so as to control the adjacent first conductive structures 161 and the second conductive structures 162 to have a longer distance, thereby preventing the occurrence of an erroneous current path between the first conductive structures 161 and the second conductive structures 162. Of course, the gap 200 can be filled with insulating material to further isolate the first conductive structure 161 and the second conductive structure 162.

[0058] In one embodiment, the solar cell structure 100 further includes a doped region 180 .

[0059] The doping region 180 may be located between the fine gate 140 and the substrate 130. The doping region 180 may include first doping regions 181 and second doping regions 182 that are spaced and alternately arranged. As an example, one of the first doping region 181 and the second doping region 182 may be an N-type conductive region, and the other may be a P-type conductive region. This embodiment does not limit the specific doping ions, doping concentrations, doping methods, etc. of the first doping region 181 and the second doping region 182.

[0060] The first doping region 181 is located between the first fine gate 141 and the substrate 130, and the second doping region 182 is located between the second fine gate 142 and the substrate 130. It can be understood that the first doping region 181 is disposed correspondingly to the first fine gate 141, and the second doping region 182 is disposed correspondingly to the second fine gate 142.

[0061] Furthermore, the gap 200 may expose at least a portion of the first doping region 181 and the second doping region 182. At this time, the first doping region 181 and the second doping region 182 may continuously pass through a plurality of first regions 110 and second regions 120.

[0062] In this embodiment, firstly, by setting the gap 200 to expose at least a portion of the first doping region 181 and the second doping region 182, it is further ensured that there is a long distance between the adjacent first conductive structures 161 and the second conductive structures 162, thereby preventing the occurrence of an erroneous current path between the first conductive structure 161 and the second conductive structure 162. Secondly, in this embodiment, the first doping region 181 and the second doping region 182 can be set across multiple first regions 110 and second regions 120, so that the first doping region 181 is continuously set along the second direction, and the second doping region 182 is continuously set along the second direction, which is beneficial to the photoelectric conversion of the solar cell structure 100.

[0063] In the related art, it is often necessary to remove the wider conductive layer between the first doping region 181 and the second doping region 182, which results in a smaller area of ​​the conductive layer. In the present application, only the gap 200 is set between the main grids of different polarities, and the conductive layer 160 is retained between the fine grids of different polarities. On the basis of avoiding the short circuit of the solar cell structure 100 (the conductive layer 160 connected to the main grid 170 can only collect the current of the doping region 180 with the same polarity as the main grid 170), the conductive layer 160 can also have a larger area, which is conducive to the conductive layer 160 reflecting light.

[0064] In one embodiment, the first insulating structure 151 extends from the surface of the first fine gate 141 to the sidewall of the first doped region 181 , and the second insulating structure 152 extends from the surface of the second fine gate 142 to the sidewall of the second doped region 182 .

[0065] In the thickness direction of the solar cell structure 100, a substrate 130, a doping region 180, and a fine gate 140 are sequentially arranged. At this time, the first insulating structure 151 extends from the surface of the first fine gate 141 to the sidewall of the first doping region 181, and the second insulating structure 152 extends from the surface of the second fine gate 142 to the sidewall of the second doping region 182, so that the first insulating structure 151 can isolate the first fine gate 141 from the first conductive structure 161 while also isolating the adjacent first doping region 181 and the second doping region 182. Similarly, the second insulating structure 152 can isolate the adjacent first doping region 181 and the second doping region 182 while isolating the second fine gate 142 from the second conductive structure 162.

[0066] In this embodiment, the possibility of an erroneous current path is further reduced by setting a first insulating structure 151 extending from the surface of the first fine gate 141 to the side wall of the first doped region 181, and a second insulating structure 152 extending from the surface of the second fine gate 142 to the side wall of the second doped region 182, thereby achieving effective current transmission.

[0067] In one embodiment, the first conductive structure 161 covers the surface and sidewalls of the first insulating structure 151 away from the substrate 130 and extends to the surface of the substrate 130 (eg, Figure 3 The second conductive structure 162 covers the surface and sidewall of the second insulating structure 152 away from the substrate 130 and extends to the surface of the substrate 130 .

[0068] The adjacent first doping regions 181 and second doping regions 182 are spaced apart, so that there is an exposed substrate 130 between the adjacent first doping regions 181 and second doping regions 182. At this time, the first conductive structure 161 can extend from the surface and sidewall of the first insulating structure 151 away from the substrate 130 to the exposed surface of the substrate 130, and the second conductive structure 162 can extend from the surface and sidewall of the second insulating structure 152 away from the substrate 130 to the exposed surface of the substrate 130.

[0069] Further, in the first region 110, the first conductive structure 161 covers the surface and sidewall of the second doped region 182 in the first region 110 away from the substrate 130. In this case, the first conductive structure 161 can extend in the same direction as the first region 110 and be continuously disposed in the first region 110. In the second region 120, the second conductive structure 162 covers the surface and sidewall of the first doped region 181 in the second region 120 away from the substrate 130. In this case, the second conductive structure 162 can extend in the same direction as the second region 120 and be continuously disposed in the second region 120.

[0070] In this embodiment, the first conductive structure 161 and the second conductive structure 162 are arranged to respectively cover the substrate 130 in the corresponding area, and the structures in the corresponding area are away from the surface and side walls of the substrate 130, thereby increasing the area of ​​the conductive layer 160, which is beneficial to the conductive layer 160 to achieve effective transmission of current and also allows the conductive layer 160 to have a larger area, which is beneficial to reflect light incident from the front, achieve higher photon utilization, and improve the photoelectric conversion rate of the solar cell.

[0071] In one embodiment, see Figure 2 The solar cell structure 100 further includes a doping layer 190 , a low-temperature passivation layer 191 , and the like.

[0072] The doping layer 190 may be located on the second side of the substrate 130. In this embodiment, the doping layer 190 may increase the number of holes or electrons, change the energy level structure of the solar cell structure 100, and increase the mobility of the solar cell structure 100, so that the solar cell structure 100 generates more charges under light, thereby improving the photoelectric conversion efficiency of the solar cell structure 100.

[0073] The low temperature passivation layer 191 may be located on the side of the doping layer 190 away from the substrate 130. The low temperature passivation layer 191 may reduce direct sunlight exposure and energy absorption, help reduce the temperature of the solar cell, and extend the service life of the solar cell. In addition, the low temperature passivation layer 191 may also reduce the impact of surface defects and impurities on the performance of the solar cell.

[0074] In addition, the solar cell structure 100 may further include a buffer layer, a transmission layer, etc. This embodiment does not specifically limit other film layers of the solar cell structure 100.

[0075] In the description of the present application, the descriptions with reference to the terms "some embodiments", "other embodiments", "ideal embodiments", etc., mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In the present application, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example. In addition, these specific features, structures or characteristics can be combined in one or more embodiments in any suitable manner. It should be understood that "this embodiment" or "one embodiment" mentioned throughout the specification means that the specific features, structures or characteristics related to the embodiment are included in at least one embodiment of the present application. Therefore, "in one embodiment" or "in an embodiment" appearing throughout the specification may not necessarily refer to the same embodiment.

[0076] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features of the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of the present application.

[0077] The embodiments described above only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all fall within the scope of protection of the present application. Therefore, the scope of protection of the patent of the present application shall be subject to the attached claims. The above description is only a preferred implementation method of the present application, and does not limit the scope of the patent of the present application. All equivalent structural transformations made by using the contents of the specification and drawings of the present application under the inventive concept of the present application, or direct / indirect application in other related technical fields are included in the scope of protection of the patent of the present application.

Claims

1. A solar cell structure, characterized in that: The solar cell structure has a first region and a second region, the first region and the second region both extend along a first direction, and the first region and the second region are alternately arranged along a second direction, the first direction intersects with the second direction, and the solar cell structure includes: substrate; A fine gate is located at one side of the substrate, the fine gate includes a first fine gate and a second fine gate extending along the second direction and alternately arranged at intervals, the first fine gate and the second fine gate crossing a plurality of first regions and a plurality of second regions; an insulating layer, comprising a first insulating structure and a second insulating structure, wherein the first insulating structure is located in the first region and on a side of the first fine gate away from the substrate, and the second insulating structure is located in the second region and on a side of the second fine gate away from the substrate; The conductive layer includes a first conductive structure and a second conductive structure arranged at intervals, wherein the first conductive structure is located in the first region, covers the first insulating structure and is located between the second fine gate and the substrate, and the second conductive structure is located in the second region, covers the second insulating structure and is located between the first fine gate and the substrate.

2. The solar cell structure according to claim 1, characterized in that: The solar cell structure further comprises: A main gate is located on a side of the conductive layer away from the substrate and extends along the first direction, the main gate includes a first main gate and a second main gate, the first main gate is located in the second area and is connected to multiple first fine gates via the second conductive structure, the second main gate is located in the first area and is connected to multiple second fine gates via the first conductive structure.

3. The solar cell structure according to claim 1, characterized in that: The conductive layer includes a third conductive structure and a fourth conductive structure, the third conductive structure is arranged corresponding to the first insulating structure, and the first fine gate is located between the first insulating structure and the third conductive structure, the fourth conductive structure is arranged corresponding to the second insulating structure, and the second fine gate is located between the second insulating structure and the fourth conductive structure.

4. The solar cell structure according to claim 3, characterized in that: The first insulating structure extends from a surface of the first fine gate to a sidewall of the third conductive structure, and the second insulating structure extends from a surface of the second fine gate to a sidewall of the fourth conductive structure.

5. The solar cell structure according to claim 1, characterized in that: There is a gap between adjacent first conductive structures and second conductive structures, and the gap at least partially exposes the first insulating structure and the second insulating structure.

6. The solar cell structure according to claim 5, characterized in that: The solar cell structure further comprises: A doped region is located between the fine gate and the substrate, the doped region includes a first doped region and a second doped region that are spaced and alternately arranged, the first doped region is located between the first fine gate and the substrate, the second doped region is located between the second fine gate and the substrate, and the gap at least exposes a portion of the first doped region and the second doped region.

7. The solar cell structure according to claim 6, characterized in that: The first insulating structure extends from a surface of the first fine gate to a sidewall of the first doped region, and the second insulating structure extends from a surface of the second fine gate to a sidewall of the second doped region.

8. The solar cell structure according to claim 6, characterized in that: The first conductive structure covers the surface and sidewall of the first insulating structure away from the substrate and extends to the surface of the substrate. The second conductive structure covers the surface and sidewall of the second insulating structure away from the substrate and extends to the surface of the substrate.

9. The solar cell structure according to claim 8, characterized in that: The first conductive structure further covers a surface and sidewalls of the second doped region in the first region away from the substrate, and the second conductive structure further covers a surface and sidewalls of the first doped region in the second region away from the substrate.

10. The solar cell structure according to claim 1, characterized in that: The solar cell structure further comprises: a doping layer, located on the other side of the substrate; The low temperature passivation layer is located on a side of the doping layer away from the substrate.

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