Pollutant removal method, semiconductor device and cleaning method thereof

Abstract

The invention provides a pollutant removal method, semiconductor equipment and a cleaning method thereof. In the method for removing the pollutants, clean gas containing hydrogen chloride is utilized, so that not only can hydrogen chloride react with solid boron oxide to form gaseous boron chloride to be taken away, but also a reaction product (water) of the hydrogen chloride and the boron oxide can be utilized to dissolve the boron oxide so as to assist in removing the boron oxide; and the removal efficiency of boron-containing pollutants is greatly improved. Meanwhile, the reaction product of the hydrogen chloride and the boron oxide comprises water, so that other water-soluble pollutants, such as phosphorus oxide and the like, can be removed. Therefore, the pollutant removal method provided by the invention can realize a convenient, rapid and efficient cleaning effect, reduces the risk that the pollutants are accumulated and fall onto the semiconductor substrate, and ensures that the processed device has good electrical properties.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a method for removing pollutants, semiconductor equipment and a cleaning method thereof. Background Art

[0002] In the semiconductor field, semiconductor equipment is usually used to process and manufacture semiconductor substrates placed therein. Therefore, the cleanliness of the semiconductor equipment will have a direct impact on the processed substrates. Removing pollutants in semiconductor equipment is an inevitable requirement for improving processes and increasing product yields. Among them, the sources of pollutants in semiconductor equipment usually include reaction byproducts or precipitates generated during processing and manufacturing.

[0003] For example, for a reflow device for reflowing borophosphosilicate glass (BPSG), when performing the reflow process, a semiconductor substrate (such as a wafer) formed with a borophosphosilicate glass film is placed in a quartz boat, and the quartz boat is placed in the reflow device (such as a quartz tube) to perform the reflow process. At this time, due to the high content of boron (B) and phosphorus (P) in the borophosphosilicate glass film, it is easy to absorb moisture to generate byproducts such as boric acid and phosphoric acid and volatilize, condense on the quartz boat and quartz tube, and accumulate to a certain extent, it is easy to fall on the semiconductor substrate to form defects, thereby causing device failure and reliability risks.

[0004] In order to ensure that semiconductor equipment can meet the cleanliness requirements, it is necessary to clean and maintain the semiconductor equipment regularly. Taking the reflow equipment used to reflow borophosphosilicate glass as an example, it is necessary to regularly remove the boron residue and phosphorus residue remaining in the equipment. In addition, the quartz boat used to carry semiconductor substrates also needs to be disassembled and cleaned regularly, but the cycle of disassembly and cleaning is long. Therefore, it is necessary to provide a convenient and efficient cleaning method to improve the removal efficiency of pollutants. Summary of the invention

[0005] The object of the present invention is to provide a method for removing pollutants, which can at least remove boron-containing pollutants conveniently and efficiently.

[0006] The present invention provides a method for removing pollutants, comprising: introducing a cleaning gas containing hydrogen chloride into a semiconductor device, wherein the hydrogen chloride is used to react with boron oxide to form boron chloride gas and is discharged, and the hydrogen chloride gas and the boron oxide also generate water and form water vapor, wherein the water vapor further dissolves the boron oxide and vaporizes the dissolved boron oxide to be discharged.

[0007] Optionally, the cleaning gas is introduced into the cavity of the semiconductor device to at least remove boron oxide attached to the cavity; and / or a quartz boat for carrying a semiconductor substrate is placed in the cavity of the semiconductor device, and the cleaning gas is also used to remove boron oxide on the quartz boat.

[0008] Optionally, the semiconductor device is a reflow device for reflowing at least one of borosilicate glass and borophosphosilicate glass.

[0009] Optionally, the cleaning gas also includes an inert gas.

[0010] Optionally, the method of introducing a cleaning gas containing hydrogen chloride includes: introducing hydrogen chloride gas and an inert gas into a gas mixer for mixing, and introducing the mixed cleaning gas into the semiconductor device.

[0011] Optionally, the method of introducing a cleaning gas containing hydrogen chloride includes: introducing an inert gas into a cleaning tank containing a hydrochloric acid solution so that the inert gas contacts the hydrochloric acid solution and carries hydrogen chloride, and introducing the inert gas carrying hydrogen chloride into the semiconductor device.

[0012] Optionally, the cleaning gas is introduced into a cavity of the semiconductor device, and the temperature in the cavity is higher than 300°C.

[0013] Optionally, the semiconductor device further contains phosphorus oxide, and the water vapor generated by the reaction of hydrogen chloride and boron oxide is also used to dissolve the phosphorus oxide, and the dissolved phosphorus oxide is vaporized and discharged.

[0014] The present invention also provides a method for cleaning semiconductor equipment, including the method for removing pollutants as described above.

[0015] The present invention also provides a semiconductor device, comprising a cavity and a gas pipeline, wherein the gas pipeline is connected to the cavity and is used to provide the required gas to the cavity. During cleaning, a cleaning gas containing hydrogen chloride is introduced into the cavity through the gas pipeline, the hydrogen chloride is used to react with boron oxide to form boron chloride gas and then be discharged, and the hydrogen chloride gas and the boron oxide also generate water and form water vapor, which further dissolves the boron oxide and vaporizes the dissolved boron oxide and then is discharged.

[0016] Optionally, the semiconductor device further includes a gas mixer, a first gas pipeline, a second gas pipeline and a third gas pipeline. The inlet end of the first gas pipeline is connected to a hydrogen chloride gas supply device for introducing hydrogen chloride gas; the inlet end of the second gas pipeline is connected to an inert gas supply device for introducing inert gas; the hydrogen chloride gas and the inert gas in the first gas pipeline and the second gas pipeline are introduced into the gas mixer to be mixed in the gas mixer; and the third gas pipeline is connected between the gas mixer and the cavity to introduce the mixed cleaning gas into the cavity.

[0017] Optionally, the semiconductor device further includes a cleaning tank, a fourth gas pipeline and a fifth gas pipeline. The cleaning tank is used to contain a hydrochloric acid solution; the inlet end of the fourth gas pipeline is connected to an inert gas supply device, and the outlet end of the fourth gas pipeline extends into the cleaning tank 140, so that the inert gas introduced contacts the hydrochloric acid solution and carries hydrogen chloride; the two ends of the fifth gas pipeline are respectively connected to the cleaning tank and the cavity, so as to introduce the inert gas carrying hydrogen chloride into the cavity.

[0018] Optionally, the semiconductor device further comprises a pre-reactor, a sixth gas pipeline, a seventh gas pipeline and an eighth gas pipeline. The inlet end of the sixth gas pipeline is connected to a hydrogen-containing gas supply device for introducing hydrogen-containing gas; the inlet end of the seventh gas pipeline is connected to an oxygen supply device for introducing oxygen; and the sixth gas pipeline and the seventh gas pipeline are also connected to the pre-reactor so that hydrogen-containing gas and oxygen are introduced into the pre-reactor to react and generate water vapor; the eighth gas pipeline is connected between the pre-reactor and the cavity to introduce the generated water vapor into the cavity.

[0019] In the method for removing pollutants provided by the present invention, the use of a clean gas containing hydrogen chloride can not only allow hydrogen chloride to react with solid boron oxide to form gaseous boron chloride and be taken away, but also the reaction product (water) of hydrogen chloride and boron oxide can be used to dissolve boron oxide, assist in removing boron oxide, and greatly improve the removal efficiency of boron-containing pollutants. At the same time, since the reaction product of hydrogen chloride and boron oxide includes water, it can also be used to remove other water-soluble pollutants, such as phosphorus oxides. Therefore, the method for removing pollutants provided by the present invention can achieve a convenient, fast and efficient cleaning effect, reduce the risk of falling onto the semiconductor substrate due to accumulation of pollutants, and ensure that the processed device has good electrical properties.

[0020] The method for removing pollutants provided by the present invention can be directly applied to cleaning semiconductor equipment to remove boron-containing pollutants and other water-soluble pollutants present in the semiconductor equipment itself. For the cleaning of semiconductor equipment, the cleaning gas containing hydrogen chloride can be directly passed into the semiconductor equipment to directly clean the cavity in the semiconductor equipment and other components in the cavity (such as a quartz boat), without the need to disassemble the various components in the cavity, which is more convenient and quick, and can save the time for disassembling and assembling components, and improve the production efficiency of the product. In addition, the removal method can also be applied to cleaning equipment, that is, the article to be cleaned is placed in the semiconductor equipment, and the semiconductor equipment can be used as a cleaning equipment for cleaning the article to be cleaned (such as a quartz boat) placed therein. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1A schematic diagram of the structure of a semiconductor device in one embodiment of the present invention.

[0022] Figure 2 FIG. 4 is another schematic diagram of the structure of a semiconductor device in an embodiment of the present invention.

[0023] Figure 3 The figure is a flow chart of a method for cleaning a semiconductor device in one embodiment of the present invention.

[0024] Figure 4 Another schematic flow chart of a cleaning method for semiconductor equipment in one embodiment of the present invention is shown.

[0025] The reference numerals are as follows:

[0026] 110-quartz tube;

[0027] 120-quartz boat;

[0028] 130-gas mixer;

[0029] 140-cleaning tank;

[0030] 151-first gas pipeline;

[0031] 152- second gas pipeline;

[0032] 153- Third gas pipeline;

[0033] 154- the fourth gas pipeline;

[0034] 155-Fifth gas pipeline. DETAILED DESCRIPTION

[0035] As described in the background art, cleaning of semiconductor equipment is crucial in semiconductor processing. Removing pollutants in semiconductor equipment can help improve the problem of pollutants accumulating and falling onto the semiconductor substrate, thereby improving the performance and reliability of the manufactured devices.

[0036] In this regard, the present invention provides a method for removing pollutants, which can be used to remove boron-containing pollutants. The specific removal method includes: introducing a cleaning gas containing hydrogen chloride into a semiconductor device, the hydrogen chloride is used to react with boron oxide to form boron chloride gas and be removed, and the hydrogen chloride gas reacts with the boron oxide to generate water and form water vapor, the water vapor further dissolves the boron oxide and vaporizes the dissolved boron oxide and is discharged.

[0037] That is, the pollutant removal method provided by the present invention utilizes a clean gas containing hydrogen chloride, which can, on the one hand, react hydrogen chloride with solid boron oxide to form gaseous boron chloride for removal, and on the other hand, can also utilize the reaction product (water) of hydrogen chloride and boron oxide to dissolve boron oxide, assist in removing boron oxide, and greatly improve the removal efficiency of boron-containing pollutants. In addition, based on the fact that the reaction product of hydrogen chloride and boron oxide includes water, the removal method provided by the present invention can also be used to remove other water-soluble pollutants, such as phosphorus-containing pollutants including phosphorus oxides, etc.

[0038] It should be noted that the method for removing pollutants provided by the present invention can not only be directly applied to cleaning semiconductor equipment to remove boron-containing pollutants and other water-soluble pollutants present in the semiconductor equipment itself; but also the removal method can be applied to cleaning equipment, that is, the semiconductor equipment mentioned above can also be a cleaning equipment, and the objects to be cleaned (such as a quartz boat) can be placed in the cleaning equipment to clean the objects to be cleaned.

[0039] The following is a further detailed description of the contaminant removal method, semiconductor device and cleaning method thereof proposed by the present invention in combination with specific embodiments. The advantages and features of the present invention will become clearer according to the following description. It should be noted that the drawings are all in a very simplified form and are not in precise proportions, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention.

[0040] Figure 1 is a schematic structural diagram of a semiconductor device in an embodiment of the present invention, Figure 2 Another structural schematic diagram of a semiconductor device in an embodiment of the present invention. The semiconductor device may be a processing device to be cleaned (e.g., a reflow device, etc.), and the contaminant removal method provided in this embodiment is used to remove boron-containing contaminants and other water-soluble contaminants (e.g., phosphorus-containing contaminants) in the semiconductor device itself; or, the semiconductor device may be a cleaning device, which is used to clean an object to be cleaned (e.g., a quartz boat, etc.) placed therein, so as to remove boron-containing contaminants and other water-soluble contaminants (e.g., phosphorus-containing contaminants) on the object to be cleaned.

[0041] In this embodiment, the removal of contaminants in a semiconductor device is used as an example for description. The semiconductor device is, for example, a reflow device for reflowing at least one of borosilicate glass and borophosphosilicate glass. Figure 1 and Figure 2As shown, the semiconductor device has a cavity. The cavity in this embodiment is, for example, a quartz tube 110. A quartz boat 120 may be placed in the cavity (quartz tube 110). The quartz boat 120 is used to carry a semiconductor substrate for performing a corresponding process. For example, a semiconductor substrate coated with borosilicate glass or borophosphosilicate glass is transferred to a quartz boat 120, and the quartz boat 120 is placed in a quartz tube 110 to perform a reflow process of the borosilicate glass or borophosphosilicate glass. During the reflow process of the borosilicate glass, the boron (B) content in the borosilicate glass film is very high, and it is easy to absorb moisture and volatilize boron by-products. The volatilized boron by-products will condense on the quartz boat 120 and the quartz tube 110 and further form boron oxides. Similarly, during the reflow process of the borophosphosilicate glass, the boron (B) and phosphorus (P) contents in the borophosphosilicate glass film are very high, and it is easy to absorb moisture and volatilize boron by-products and phosphorus by-products. The volatilized boron and phosphorus by-products will condense on the quartz boat 120 and the quartz tube 110 and form boron oxides and phosphorus oxides.

[0042] Furthermore, the method for removing pollutants in semiconductor equipment specifically includes: introducing a cleaning gas containing hydrogen chloride into the semiconductor equipment. In the present embodiment, the cleaning gas containing hydrogen chloride is introduced into the cavity (i.e., the quartz tube 110) to at least remove the boron-containing pollutants attached to the quartz tube 110. In the specific example, the quartz boat 120 can also be installed in the quartz tube 110, and the boron-containing pollutants attached to the quartz tube 110 and the quartz boat 120 can be removed at the same time. In the process of removing pollutants, the boron oxide can be removed by reacting the hydrogen chloride in the cleaning gas with the boron oxide. The reaction chemical formula of hydrogen chloride and boron oxide is: B2O3+6HCL=2BCL3+3H2O.

[0043] Specifically, hydrogen chloride (HCL) reacts with solid boron-containing pollutants (boron-containing pollutants include boron oxides) to form boron chloride. Since the boiling point of boron chloride is about 12.5°C, it is usually in a gaseous state and can be quickly discharged. In addition, hydrogen chloride reacts with boron oxides to generate water, and the boiling point of water is about 100°C. At this time, by setting the temperature in the cavity, it is easy to make the generated water form water vapor in the cavity, and the water vapor can further dissolve the boron oxide, and the dissolved boron oxide is also easy to vaporize and be discharged in the high-temperature cavity. Further, water (water vapor) reacts with condensed boron oxides to form boric acid, and the boiling point of boric acid is about 300°C, so the temperature in the cavity can be set to be higher than 300°C, so that the dissolved boric acid can be vaporized in the high-temperature cavity. In one example, the temperature in the cavity can be further set to be greater than or equal to 600°C, and more specifically, it can be set between 900°C-1100°C.

[0044] In addition, since the reaction product of hydrogen chloride and boron oxide includes water, the reaction product can also be used to further remove other water-soluble substances, including boron oxide and phosphorus oxide. In particular, for the reflux equipment of borophosphosilicate glass, boron oxide and phosphorus oxide generally remain in the reflux equipment at the same time. At this time, the water generated by the reaction can be used to dissolve the boron oxide and phosphorus oxide to remove the boron residue and phosphorus residue at the same time. That is, the water vapor generated by the reaction of hydrogen chloride and boron oxide is also used to dissolve phosphorus oxide, and the dissolved phosphorus oxide is vaporized and discharged. Specifically, water (water vapor) reacts with condensed phosphorus oxide to form phosphoric acid, and the boiling point of phosphoric acid is about 261°C. Therefore, when the temperature in the cavity is set to be higher than 300°C, the dissolved phosphoric acid can be vaporized and discharged in the high-temperature cavity.

[0045] For example, during the cleaning process, the temperature in the chamber can be set to be greater than or equal to 600°C, and more specifically, can be set between 900°C and 1100°C. At this time, the reaction products produced by the reaction of hydrogen chloride and boron oxide can be in gaseous form (that is, the reaction produces gaseous boron chloride and water vapor) and can be easily discharged, and the water vapor can further dissolve the boron oxide and phosphorus oxide. At the same time, the boric acid and phosphoric acid formed by the dissolution of the boron oxide and phosphorus oxide will also be vaporized in the high-temperature chamber and discharged.

[0046] Next, focus on reference Figure 1 As shown, in Figure 1 In the example, the cleaning gas containing hydrogen chloride is specifically a mixture of hydrogen chloride gas and an inert gas and then introduced into the semiconductor device. Specifically, the semiconductor device also includes a gas mixer 130, and the gas mixer 130 is connected to the gas inlet of the cavity of the semiconductor device (the quartz tube 110 in this embodiment) for mixing different gases evenly and introducing them into the cavity of the semiconductor device. When the semiconductor device needs to be cleaned, the cleaning gas can be evenly mixed in the gas mixer 130 and further introduced into the semiconductor device. The cleaning gas in this embodiment, for example, includes hydrogen chloride gas and an inert gas, and the inert gas includes, for example, nitrogen (N2) or argon (Ar), etc. The introduction of an inert gas facilitates the adjustment of the content of hydrogen chloride gas, and ensures that the overall gas volume of the cleaning gas introduced is sufficient, thereby improving the distribution uniformity of the hydrogen chloride gas introduced.

[0047] exist Figure 1In the example shown, the semiconductor device includes a first gas pipeline 151 and a second gas pipeline 152. The inlet end of the first gas pipeline 151 can be connected to a hydrogen chloride gas supply device for introducing hydrogen chloride gas; the inlet end of the second gas pipeline 152 can be connected to an inert gas supply device for introducing inert gas (e.g., nitrogen). In addition, the outlet ends of the first gas pipeline 151 and the second gas pipeline 152 can be connected to a gas mixer 130, so that the hydrogen chloride gas and the inert gas are directly introduced into the gas mixer 130 for mixing; or, the outlet end of the first gas pipeline 151 is connected to the second gas pipeline 152, and the outlet end of the second gas pipeline 152 is connected to the gas mixer 130, so that the hydrogen chloride gas can first be introduced into the second gas pipeline 152, and then introduced into the gas mixer 130 together with the inert gas in the second gas pipeline 152. Specifically, a third gas pipeline 153 is connected between the gas mixer 130 and the cavity (ie, the quartz tube 110 ) for passing the mixed cleaning gas into the quartz tube 110 .

[0048] Therefore, combined with Figure 1 and Figure 3 As shown, the method for removing pollutants in this example is: introducing hydrogen chloride gas and inert gas separately, and uniformly mixing the hydrogen chloride gas and the inert gas in the gas mixer 130; then, introducing the mixed gas into the semiconductor device to at least remove the boron-containing pollutants.

[0049] Next reference Figure 2 As shown, in Figure 2 In the example of , the cleaning gas containing hydrogen chloride is introduced into the semiconductor device by using an inert gas to carry hydrogen chloride. Figure 2 As shown, the semiconductor device includes a cleaning tank 140, a fourth gas pipeline 154 and a fifth gas pipeline 155. The cleaning tank 140 is used to contain a hydrochloric acid solution; the inlet end of the fourth gas pipeline 154 can be connected to an inert gas supply device, and the outlet end of the fourth gas pipeline 154 extends deep into the cleaning tank 140 and can reach a position near the bottom of the cleaning tank 140, which is used to introduce an inert gas (for example, nitrogen or argon, etc.) and make the inert gas fully contact the hydrochloric acid solution to facilitate carrying hydrogen chloride; the two ends of the fifth gas pipeline 155 are respectively connected to the cleaning tank 140 and the cavity (quartz tube 110) of the semiconductor device, and are used to pass the inert gas carrying hydrogen chloride into the quartz tube 110.

[0050] Therefore, combined with Figure 2 and Figure 4 As shown, the method for removing pollutants in this example is: introducing an inert gas into a hydrochloric acid solution so that the inert gas contacts the hydrochloric acid solution and carries hydrogen chloride; then, introducing the inert gas carrying hydrogen chloride into a semiconductor device to remove at least boron-containing pollutants.

[0051] As described above, the water produced by the reaction of hydrogen chloride and boron oxide can be used to dissolve water-soluble pollutants. In a further solution, additional water vapor can be added to the semiconductor device to increase the water vapor content and improve the removal efficiency of water-soluble pollutants.

[0052] In an optional solution, hydrocarbons and oxygen may be introduced to generate water vapor and introduced into the semiconductor device, and the hydrocarbons used may include, for example, methane. Specifically, hydrocarbons and oxygen may be introduced into a pre-reactor first to react and generate water vapor, and then the water vapor may be introduced into the cavity of the semiconductor device, which is conducive to improving the uniformity of the distribution of water vapor in the cavity.

[0053] In another optional solution, hydrogen and oxygen can be introduced to generate water vapor and introduced into the semiconductor device. Similarly, hydrogen and oxygen can be introduced into the pre-reactor first to react and generate water vapor, and then the water vapor is introduced into the cavity of the semiconductor device to improve the uniformity of the distribution of water vapor in the cavity.

[0054] Based on the above-mentioned pollutant removal method, boron pollutants can be removed conveniently and efficiently, and other water-soluble pollutants (including phosphorus oxides, etc.) can also be removed. The pollutant removal method can be used not only for cleaning semiconductor equipment, but also for cleaning items to be cleaned placed in semiconductor equipment. For example, a quartz boat to be cleaned can be placed in the semiconductor equipment, and then a cleaning gas containing hydrogen chloride is introduced to remove boron-containing pollutants and water-soluble substances attached to the quartz boat.

[0055] In addition, a semiconductor device is provided in this embodiment, which can achieve the effect of efficiently removing boron-containing pollutants and water-soluble pollutants (including phosphorus-containing oxides). Specifically, the semiconductor device includes: a cavity and a gas pipeline connected to the cavity, the gas pipeline is used to provide the required gas to the cavity, including: introducing a cleaning gas containing hydrogen chloride during cleaning.

[0056] Specifically, when cleaning (for example, cleaning the cavity of the semiconductor device; and / or cleaning the items placed in the cavity), a cleaning gas containing hydrogen chloride can be introduced into the cavity through a gas pipeline, so that hydrogen chloride reacts with solid boron-containing pollutants (including boron oxides) to form boron chloride gas and is removed, and hydrogen chloride also reacts with boron oxides to generate water and form water vapor, which can further dissolve the boron oxides and vaporize the dissolved boron oxides to be discharged. In addition, the water vapor formed by the reaction of hydrogen chloride and boron oxides can also dissolve other water-soluble pollutants, such as phosphorus oxides.

[0057] In an optional solution, please refer to Figure 1 As shown, the semiconductor device includes a gas mixer 130, a first gas pipeline 151, a second gas pipeline 152 and a third gas pipeline 153. The inlet end of the first gas pipeline 151 can be connected to a hydrogen chloride gas supply device for introducing hydrogen chloride gas; the inlet end of the second gas pipeline 152 can be connected to an inert gas supply device for introducing inert gas (e.g., nitrogen or argon); and the hydrogen chloride gas and the inert gas introduced through the first gas pipeline 151 and the second gas pipeline 152 are further introduced into the gas mixer 130 to be evenly mixed in the gas mixer 130. The third gas pipeline 153 is connected between the gas mixer 130 and the chamber (i.e., the quartz tube 110) to introduce the mixed cleaning gas into the quartz tube 110.

[0058] Another alternative is to refer to Figure 2 As shown, the semiconductor device includes a cleaning tank 140, a fourth gas pipeline 154 and a fifth gas pipeline 155. The cleaning tank 140 is used to contain a hydrochloric acid solution; the inlet end of the fourth gas pipeline 154 can be connected to an inert gas supply device, and the outlet end of the fourth gas pipeline 154 extends into the cleaning tank 140 and can reach a position near the bottom of the cleaning tank 140, which is used to pass an inert gas (for example, nitrogen or argon, etc.) and make the inert gas fully contact the hydrochloric acid solution to facilitate carrying hydrogen chloride; the two ends of the fifth gas pipeline 155 are respectively connected to the cleaning tank 140 and the cavity (quartz tube 110) of the semiconductor device, and are used to pass the inert gas carrying hydrogen chloride into the quartz tube 110.

[0059] In other examples, the semiconductor device further includes a sixth gas pipeline, a seventh gas pipeline, an eighth gas pipeline and a pre-reactor. Among them, the inlet end of the sixth gas pipeline can be connected to a hydrogen-containing gas supply device (for example, a hydrocarbon supply device or a hydrogen supply device) for passing hydrogen-containing gas (for example, hydrocarbon or hydrogen); the inlet end of the seventh gas pipeline can be connected to an oxygen supply device for passing oxygen. And, the sixth gas pipeline and the seventh gas pipeline are connected to the pre-reactor so that hydrogen-containing gas and oxygen are passed into the pre-reactor to react to generate water vapor (for example, hydrocarbons and oxygen react to generate water vapor; or, hydrogen and oxygen react to generate water vapor); the eighth gas pipeline is connected between the pre-reactor and the cavity (that is, the quartz tube 110) to pass the generated water vapor into the quartz tube 110.

[0060] In summary, the pollutant removal method provided in this embodiment can not only utilize hydrogen chloride to react with solid boron oxide to generate gaseous boron chloride to remove boron-containing pollutants, but also the water formed by the reaction of hydrogen chloride and boron oxide can further dissolve water-soluble pollutants, including boron oxide and phosphorus oxide, greatly improving the removal efficiency of pollutants, reducing the risk of pollutants falling onto the semiconductor substrate due to accumulation, and ensuring that the processed device has good electrical properties. In addition, for the cleaning of semiconductor equipment, the cleaning gas containing hydrogen chloride can be directly introduced into the semiconductor equipment to directly clean the cavity in the semiconductor equipment and other components in the cavity (such as a quartz boat), without the need to disassemble the various components in the cavity, which is more convenient and quick, and can save the time of disassembling and assembling components, and improve the production efficiency of the product.

[0061] It should be noted that, although the present invention has been disclosed as a preferred embodiment, the above embodiment is not intended to limit the present invention. For any technician familiar with the art, without departing from the scope of the technical solution of the present invention, the technical content disclosed above can be used to make many possible changes and modifications to the technical solution of the present invention, or modified into equivalent embodiments of equivalent changes. Therefore, any simple modification, equivalent change and modification made to the above embodiment according to the technical essence of the present invention without departing from the content of the technical solution of the present invention still belongs to the scope of protection of the technical solution of the present invention.

[0062] It should also be understood that, unless otherwise specified or indicated, the terms "first", "second", "third", etc. in the specification are only used to distinguish the various components, elements, steps, etc. in the specification, rather than to represent the logical relationship or sequential relationship between the various components, elements, steps, etc. It should also be recognized that the terms described herein are only used to describe specific embodiments, rather than to limit the scope of the present invention. It must be noted that the singular forms "one" and "a kind" used herein and in the appended claims include plural references unless the context clearly indicates the opposite meaning. For example, a reference to "a step" or "a device" means a reference to one or more steps or devices, and may include secondary steps and secondary devices. All conjunctions used should be understood in the broadest sense. And, the word "or" should be understood to have the definition of a logical "or", rather than a logical "exclusive or" definition, unless the context clearly indicates the opposite meaning.

Claims

1. A method for removing pollutants, characterized in that: include: A cleaning gas containing hydrogen chloride is introduced into the semiconductor device, and the hydrogen chloride is used to react with the boron oxide to form boron chloride gas and be discharged. The hydrogen chloride gas and the boron oxide also generate water and form water vapor, which further dissolves the boron oxide and vaporizes the dissolved boron oxide and is discharged.

2. The method for removing pollutants according to claim 1, characterized in that: The cleaning gas is introduced into the cavity of the semiconductor device to at least remove the boron oxide attached to the cavity; and / or, A quartz boat for carrying a semiconductor substrate is placed in the chamber of the semiconductor device, and the cleaning gas is also used to remove boron oxide on the quartz boat.

3. The method for removing pollutants according to claim 1, characterized in that: The semiconductor device is a reflow device for reflowing at least one of borosilicate glass and borophosphosilicate glass.

4. The method for removing pollutants according to claim 1, characterized in that: The cleaning gas also includes an inert gas.

5. The method for removing pollutants according to claim 4, characterized in that: The method of introducing a cleaning gas containing hydrogen chloride comprises: introducing hydrogen chloride gas and an inert gas into a gas mixer for mixing, and introducing the mixed cleaning gas into the semiconductor device.

6. The method for removing pollutants according to claim 4, characterized in that: The method of introducing a cleaning gas containing hydrogen chloride comprises: introducing an inert gas into a cleaning tank containing a hydrochloric acid solution so that the inert gas contacts the hydrochloric acid solution and carries hydrogen chloride, and introducing the inert gas carrying hydrogen chloride into the semiconductor device.

7. The method for removing pollutants according to claim 1, characterized in that: The cleaning gas is introduced into a cavity of the semiconductor device, and the temperature in the cavity is higher than 300° C.

8. The method for removing pollutants according to any one of claims 1 to 7, characterized in that: The semiconductor device also contains phosphorus oxides, and the water vapor generated by the reaction of hydrogen chloride and boron oxide is used to dissolve the phosphorus oxides, and the dissolved phosphorus oxides are vaporized and discharged.

9. A method for cleaning a semiconductor device, characterized in that: A method for removing pollutants comprising the method as described in any one of claims 1 to 8.

10. A semiconductor device, characterized in that: It comprises a cavity and a gas pipeline, wherein the gas pipeline is connected to the cavity and is used to provide the required gas to the cavity; During cleaning, a cleaning gas containing hydrogen chloride is introduced into the cavity through the gas pipeline, and the hydrogen chloride is used to react with the boron oxide to form boron chloride gas and then be discharged, and the hydrogen chloride gas and the boron oxide also generate water and form water vapor, and the water vapor further dissolves the boron oxide and vaporizes the dissolved boron oxide and then is discharged.

11. The semiconductor device according to claim 10, wherein: The semiconductor device also includes a gas mixer, a first gas pipeline, a second gas pipeline and a third gas pipeline; The inlet end of the first gas pipeline is connected to a hydrogen chloride gas supply device for introducing hydrogen chloride gas; the inlet end of the second gas pipeline is connected to an inert gas supply device for introducing inert gas; the hydrogen chloride gas and the inert gas in the first gas pipeline and the second gas pipeline are introduced into the gas mixer to be mixed in the gas mixer; and the third gas pipeline is connected between the gas mixer and the cavity to introduce the mixed clean gas into the cavity.

12. The semiconductor device according to claim 10, wherein: The semiconductor device also includes a cleaning tank, a fourth gas pipeline and a fifth gas pipeline; Among them, the cleaning tank is used to contain hydrochloric acid solution; the inlet end of the fourth gas pipeline is connected to the inert gas supply device, and the outlet end of the fourth gas pipeline extends into the cleaning tank, so that the inert gas introduced contacts the hydrochloric acid solution and carries hydrogen chloride; the two ends of the fifth gas pipeline are respectively connected to the cleaning tank and the cavity, so as to pass the inert gas carrying hydrogen chloride into the cavity.

13. The semiconductor device according to claim 10, wherein: The semiconductor device further includes a pre-reactor, a sixth gas pipeline, a seventh gas pipeline and an eighth gas pipeline; Among them, the inlet end of the sixth gas pipeline is connected to the hydrogen-containing gas supply device for introducing the hydrogen-containing gas; the inlet end of the seventh gas pipeline is connected to the oxygen supply device for introducing the oxygen; and the sixth gas pipeline and the seventh gas pipeline are also connected to the pre-reactor so that the hydrogen-containing gas and oxygen are introduced into the pre-reactor to react and generate water vapor; the eighth gas pipeline is connected between the pre-reactor and the cavity, and is used to introduce the generated water vapor into the cavity.

14. The semiconductor device according to any one of claims 10 to 13, characterized in that: The semiconductor device is a reflow device for reflowing at least one of borosilicate glass and borophosphosilicate glass.

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