Application of cleaning fluid

Abstract

The invention discloses application of a cleaning solution. The cleaning solution is used for cleaning the etched and ashed semiconductor chip; the raw materials of the cleaning liquid comprise, by mass, 0.1-30% of an oxidizing agent, amine organic matter, fluoride, a corrosion inhibitor, a chelating agent, a surfactant and the balance water, and the sum of the mass fractions of all the components is 100%. The amine organic matter is nitrogen alkyl ammonium hydroxide and / or alcohol amine; the chelating agent is one or more of n ethylene m amine which is not substituted or substituted by one or more C1-C4 alkyl groups, polyethylene polyamine and nitrogen-containing organic acid; n is an integer from 2 to 10, and m is an integer from 3 to 10; the surfactant is an EO (Ethylene Oxide)-PO (Propylene Oxide) polymer L43; the cleaning solution does not contain metal ions. The cleaning solution has a good cleaning effect, selectively removes the TiN hard mask, and inhibits damage to copper or copper alloy and cobalt or cobalt alloy.

Description

Technical Field

[0001] The invention relates to application of a cleaning liquid. Background Art

[0002] In the manufacture of highly integrated semiconductor elements, a conductive film such as a metal film as a raw material for conductive wiring and an interlayer insulating film for the purpose of insulation between conductive films are usually formed on a silicon wafer or other element, and then a photoresist is evenly coated on the surface to set a photosensitive layer, and selective exposure and development treatment are performed to form a desired photoresist pattern. Next, the interlayer insulating film is dry-etched using the photoresist pattern as a mask, thereby forming a desired pattern on the film. Then, the following series of steps are usually used: the photoresist pattern and the residue generated by the dry etching process (hereinafter referred to as "dry etching residue") are completely removed using ashing based on oxygen plasma, cleaning liquid, etc.

[0003] In recent years, the miniaturization of design standards has been promoted, and signal transmission delay has dominated the limit of high-speed computing processing. Therefore, the transition from interlayer insulating film silicon oxide film to low dielectric constant interlayer insulating film (film with relative dielectric constant less than 3, hereinafter referred to as "low dielectric constant interlayer insulating film") has been promoted. In addition, in the case of forming a pattern of less than 0.2μm, for a photoresist with a film thickness of 1μm, the aspect ratio of the pattern (the ratio obtained by dividing the photoresist film thickness by the photoresist line width) becomes too large, resulting in pattern collapse and other problems. In order to solve this problem, the following hard mask method is sometimes used: a titanium (Ti)-based or silicon (Si)-based film (hereinafter referred to as a hard mask) is inserted between the actual pattern to be formed and the photoresist film, the photoresist pattern is temporarily transferred to the hard mask by dry etching and the photoresist is removed, and then the hard mask is used as an etching mask to transfer the pattern to the film to be formed by dry etching. This method can replace the gas used when etching the hard mask and the gas used when etching the film actually desired to be formed, can select the selectivity ratio between the photoresist and the hard mask when etching the hard mask, and can ensure the selectivity ratio between the hard mask and the film actually etched when etching the actual film. Therefore, it has the advantage of being able to minimize damage to the actual film and form a pattern.

[0004] Furthermore, as the design standard becomes smaller, the current density of the metal wiring increases. To prevent electromigration, cobalt or cobalt alloy is formed as a cap metal on the copper wiring to form the metal wiring material.

[0005] Therefore, there is a need for a cleaning agent for cleaning etching residues, which has a better cleaning effect, can remove the hard mask at the same time, and can inhibit damage to copper or copper alloys and cobalt or cobalt alloys. Summary of the invention

[0006] The technical problem to be solved by the present invention is to provide an application of a cleaning solution in order to overcome the problem of poor compatibility in traditional cleaning solutions. The cleaning solution of the present invention has one or more of the following advantages: better stability, better cleaning effect on post-etching residues, selective removal of TiN hard masks, and suppression of damage to copper or copper alloys and cobalt or cobalt alloys.

[0007] The present invention solves the above technical problems through the following technical solutions.

[0008] The present invention provides an application of a cleaning liquid, wherein the cleaning liquid is used for cleaning semiconductor chips after etching and ashing;

[0009] The raw materials of the cleaning liquid include the following components in mass fraction: 0.1-30% of oxidant, amine organic matter, fluoride, corrosion inhibitor, chelating agent, surfactant and water, the water makes up the balance, and the sum of the mass fractions of each component is 100%; the amine organic matter is nitrogen alkyl ammonium hydroxide and / or alcohol amine; the chelating agent is one or more of n-ethylene m-amine (single substance) that is unsubstituted or substituted with one or more C1-C4 alkyl groups, polyethylene polyamine (co-product of ethylenediamine, diethylenetriamine, triethylenetetramine and tetraethylenepentamine) and nitrogen-containing organic acid; n is an integer of 2-10, and m is an integer of 3-10; the surfactant is EO-PO polymer L43; the cleaning liquid does not contain metal ions;

[0010] The mass fraction of each component is the mass percentage of the mass of each component to the total mass of all components in the cleaning solution.

[0011] In the application, the semiconductor chip is preferably a copper interconnect or cobalt interconnect semiconductor chip.

[0012] In the application, the cleaning temperature may be 10-90°C, preferably 20-60°C, more preferably 40-45°C.

[0013] In the application, the pH of the cleaning solution may be 5-13.5, preferably 8-12.

[0014] In the application, the oxidant can be a conventional oxidant for cleaning liquids in the art, preferably one or more of hydrogen peroxide, N-methylmorpholine oxide, benzoyl peroxide, tetrabutylammonium peroxymonosulfate, ozone, ammonium peroxydisulfate, peracetic acid, urea peroxide, nitric acid, ammonium chlorite, ammonium chlorate, ammonium iodate, ammonium perborate, ammonium perchlorate, ammonium periodate, ammonium persulfate, tetramethylammonium chlorite, tetramethylammonium chlorate, tetramethylammonium iodate, tetramethylammonium perborate, tetramethylammonium perchlorate, tetramethylammonium periodate, tetramethylammonium persulfate, urea peroxide and peracetic acid, such as hydrogen peroxide.

[0015] In the application, the mass fraction of the oxidant is preferably 0.5-20%, more preferably 5-20%, such as 15%.

[0016] In the application, in the amine organic matter, the azanyl ammonium hydroxide can be tetramethyl ammonium hydroxide; the alcohol amine can be one or more of monoethanolamine, diethanolamine and triethanolamine, such as monoethanolamine and / or diethanolamine.

[0017] In the application, the mass fraction of the amine organic matter can be the conventional mass fraction of the cleaning solution in the art, preferably 0.01-20%, more preferably 0.1-15%, for example 13%.

[0018] In the application, the fluoride can be a conventional fluoride used in cleaning solutions in the art, preferably one or more of hydrogen fluoride, ammonium fluoride, tetraalkylammonium fluoride, fluoroboric acid and ammonium tetrafluoroborate, such as ammonium fluoride.

[0019] In the application, the mass fraction of the fluoride can be the conventional mass fraction of the cleaning solution in the art, preferably 0.01-15%, more preferably 0.1-10%, such as 2.5% or 5%.

[0020] In the application, the corrosion inhibitor can be a conventional corrosion inhibitor for cleaning solutions in the art, preferably benzotriazole, toluenetriazole, 5-phenyl-benzotriazole, 5-nitro-benzotriazole, 3-amino-5-mercapto-1,2,4-triazole, 1-amino-1,2,4-triazole, hydroxybenzotriazole, 2-(5-amino-pentyl)-benzotriazole, 1-amino-1,2,3-triazole, 1-amino-5-methyl-1,2,3-triazole, 3-amino-1,2,4-triazole, 3-mercapto-1,2,4-triazole, 3-isopropyl-1,2,4-triazole, 5-benzenethiol-benzotriazole, halogenated-benzotriazole, naphthotriazole, 2-mercaptobenzimidazole , 2-mercaptobenzothiazole, 4-methyl-2-phenylimidazole, 2-mercaptothiazoline, 5-aminotetrazole, 5-aminotetrazole monohydrate, 5-amino-1,3,4-thiadiazole-2-thiol, 2,4-diamino-6-methyl-1,3,5-triazine, thiazole, triazine, methyltetrazole, 1,3-dimethyl-2-imidazolidinone, 1,5-pentamethylenetetrazole, 1-phenyl-5-mercaptotetrazole, diaminomethyltriazine, imidazolinethione, mercaptobenzimidazole, 4-methyl-4H-1,2,4-triazole-3-thiol, 5-amino-1,3,4-thiadiazole-2-thiol and one or more of benzothiazole, such as benzotriazole (BTA).

[0021] In the application, the mass fraction of the corrosion inhibitor can be the conventional mass fraction of the cleaning solution in the art, preferably 0.001-5%, more preferably 0.01-3%, such as 0.5%.

[0022] In the application, in the chelating agent, the n-ethylene-m-amine can be diethylenetriamine and / or pentamethyldiethylenetriamine, such as pentamethyldiethylenetriamine; the nitrogen-containing organic acid can be one or more of 2-aminoacetic acid, 2-aminobenzoic acid, iminodiacetic acid, nitrilotriacetic acid and ethylenediaminetetraacetic acid, such as iminodiacetic acid.

[0023] In the application, the mass fraction of the chelating agent can be the conventional mass fraction of cleaning liquid in the art, preferably 0.001-5%, more preferably 0.01-3%, such as 1.5%.

[0024] In the application, the mass fraction of the surfactant can be the conventional mass fraction of cleaning liquids in the art, preferably 0.001-5%, more preferably 0.01-3%, for example 1%.

[0025] In the application, the water can be conventional water used in the cleaning solution of the art, preferably one or more of deionized water, distilled water and pure water, such as deionized water.

[0026] In a certain technical solution, in the application, the raw materials of the cleaning solution include the following components in mass fraction:

[0027] The oxidant is hydrogen peroxide;

[0028] The mass fraction of the oxidant is 0.1-30%;

[0029] The amine organic compound is one or more of tetramethylammonium hydroxide, monoethanolamine and diethanolamine;

[0030] The mass fraction of the amine organic matter is 0.01-20%;

[0031] The fluoride is ammonium fluoride;

[0032] The mass fraction of the fluoride is 0.01-15%;

[0033] The corrosion inhibitor is benzotriazole;

[0034] The corrosion inhibitor is 0.001-5%;

[0035] The chelating agent is pentamethyldiethylenetriamine and / or iminodiacetic acid;

[0036] The mass fraction of the chelating agent is 0.001-5%;

[0037] The mass fraction of the surfactant is 0.001-5%;

[0038] The water is deionized water, and the deionized water makes up the balance.

[0039] In a certain technical solution, in the application, the raw materials of the cleaning solution include the following components in mass fraction:

[0040] The oxidant is hydrogen peroxide;

[0041] The mass fraction of the oxidant is 15%;

[0042] The amine organic compound is one or more of tetramethylammonium hydroxide, monoethanolamine and diethanolamine;

[0043] The mass fraction of the amine organic matter is 13%;

[0044] The fluoride is ammonium fluoride;

[0045] The mass fraction of the fluoride is 2.5% or 5%;

[0046] The corrosion inhibitor is benzotriazole;

[0047] The corrosion inhibitor is 0.5%;

[0048] The chelating agent is pentamethyldiethylenetriamine and / or iminodiacetic acid;

[0049] The mass fraction of the chelating agent is 1.5%;

[0050] The mass fraction of the surfactant is 1%;

[0051] The water is deionized water, and the deionized water makes up the balance.

[0052] In a preferred technical solution, in the application, the raw materials of the cleaning solution include any combination of the following components in mass fraction:

[0053] Combination 1: 15% hydrogen peroxide, 13% tetramethylammonium hydroxide, 2.5% ammonium fluoride, 0.5% benzotriazole, 1.5% pentamethyldiethylenetriamine, 1% EO-PO polymer L43 and deionized water, with deionized water making up the balance;

[0054] Combination 2: 15% hydrogen peroxide, 13% tetramethylammonium hydroxide, 5% ammonium fluoride, 0.5% benzotriazole, 1.5% pentamethyldiethylenetriamine, 1% EO-PO polymer L43 and deionized water, with deionized water making up the balance;

[0055] Combination 3: 15% hydrogen peroxide, 13% diethanolamine, 2.5% ammonium fluoride, 0.5% benzotriazole, 1.5% pentamethyldiethylenetriamine, 1% EO-PO polymer L43 and deionized water, with deionized water making up the balance;

[0056] Combination 4: 15% hydrogen peroxide, 13% diethanolamine, 5% ammonium fluoride, 0.5% benzotriazole, 1.5% pentamethyldiethylenetriamine, 1% EO-PO polymer L43 and deionized water, with deionized water making up the balance;

[0057] Combination 5: 15% hydrogen peroxide, 13% monoethanolamine, 2.5% ammonium fluoride, 0.5% benzotriazole, 1.5% pentamethyldiethylenetriamine, 1% EO-PO polymer L43 and deionized water, with deionized water making up the balance;

[0058] Combination 6: 15% hydrogen peroxide, 13% monoethanolamine, 5% ammonium fluoride, 0.5% benzotriazole, 1.5% pentamethyldiethylenetriamine, 1% EO-PO polymer L43 and deionized water, with deionized water making up the balance;

[0059] Combination 7: 15% hydrogen peroxide, 13% tetramethylammonium hydroxide, 2.5% ammonium fluoride, 0.5% benzotriazole, 1.5% iminodiacetic acid, 1% EO-PO polymer L43 and deionized water, with deionized water making up the balance;

[0060] Combination 8: 15% hydrogen peroxide, 13% tetramethylammonium hydroxide, 5% ammonium fluoride, 0.5% benzotriazole, 1.5% iminodiacetic acid, 1% EO-PO polymer L43 and deionized water, with deionized water making up the balance;

[0061] Combination 9: 15% hydrogen peroxide, 13% diethanolamine, 2.5% ammonium fluoride, 0.5% benzotriazole, 1.5% iminodiacetic acid, 1% EO-PO polymer L43 and deionized water, with deionized water making up the balance;

[0062] Combination 10: 15% hydrogen peroxide, 13% diethanolamine, 5% ammonium fluoride, 0.5% benzotriazole, 1.5% iminodiacetic acid, 1% EO-PO polymer L43 and deionized water, with deionized water making up the balance;

[0063] Combination 11: 15% hydrogen peroxide, 13% monoethanolamine, 2.5% ammonium fluoride, 0.5% benzotriazole, 1.5% iminodiacetic acid, 1% EO-PO polymer L43 and deionized water, with deionized water making up the balance;

[0064] Combination 12: 15% hydrogen peroxide, 13% monoethanolamine, 5% ammonium fluoride, 0.5% benzotriazole, 1.5% iminodiacetic acid, 1% EO-PO polymer L43 and deionized water, with deionized water making up the balance.

[0065] In a certain technical implementation scheme, in the application, the raw materials of the cleaning solution are composed of the following components in mass fractions: the above-mentioned oxidant, the above-mentioned amine organic matter, the above-mentioned fluoride, the above-mentioned corrosion inhibitor, the above-mentioned chelating agent, the above-mentioned surfactant and the above-mentioned water, with water making up the balance.

[0066] In the present invention, "room temperature" refers to 10-30°C.

[0067] Without violating the common sense in the art, the above-mentioned preferred conditions can be arbitrarily combined to obtain the preferred embodiments of the present application.

[0068] The reagents and raw materials of the present invention are commercially available.

[0069] In the present invention, EO-PO polymer L43 was purchased from Nantong Jinlai Chemical Co., Ltd.

[0070] The positive improvement effect of the present invention is that the cleaning solution of the present invention has better stability, has better cleaning effect on the residue after etching, can selectively remove the TiN hard mask, and can inhibit the damage of copper or copper alloy and cobalt or cobalt alloy. DETAILED DESCRIPTION

[0071] The present invention is further described below by way of examples, but the present invention is not limited to the scope of the examples. The experimental methods in the following examples without specifying specific conditions are carried out according to conventional methods and conditions, or selected according to the product specifications.

[0072] In the following examples and comparative examples, the preparation method of the cleaning solution includes the following steps: adding the solid component to the liquid component and stirring evenly.

[0073] In the following embodiments, if no specific operating temperature is specified, the operation is performed at room temperature.

[0074] The types of the raw material components in the cleaning solution of each embodiment are the raw material components and deionized water shown in Table 1.

[0075] Table 1: Types of raw material components in the cleaning solution of the embodiment and comparative example

[0076]

[0077]

[0078] The mass fractions of the raw material components in the cleaning solutions of the embodiments and comparative examples are shown in Table 2.

[0079] Table 2: Mass fraction of each raw material component in the cleaning solution of the embodiment and the comparative example (%)

[0080]

[0081]

[0082] Effect Example

[0083] 1. Placement of cleaning fluid

[0084] After the cleaning solutions prepared in the above-mentioned embodiments and comparative examples were heated continuously for 24 hours, the pH value was detected.

[0085] Step (1), testing the initial pH value of the cleaning solution prepared in the above embodiments and comparative examples;

[0086] Step (2), the cleaning solution prepared in the above embodiments and comparative examples is placed in a 1-gallon high-purity barrel, heated to 40 degrees and maintained at a constant temperature, and the pH value of the cleaning solution is tested after 24 hours. The results are shown in Table 3 below.

[0087] 2. Test of the corrosion effect of the cleaning solutions prepared in the above embodiments and comparative examples on blank wafers The cleaning solutions prepared in the above embodiments and comparative examples were used to clean wafers with titanium nitride films (TiN dummy wafers) to measure their corrosion effects on TiN. Test method and conditions: TiN (12-inch) film wafers were immersed in the cleaning solution, and oscillated at a constant temperature oscillator at a vibration frequency of about 60 rpm for 15 minutes at 20-60°C, then washed with deionized water and dried with high-purity nitrogen. The surface thickness of the blank TiN film wafers before and after etching was measured by a four-point probe instrument to calculate the change.

[0088] The cleaning solutions prepared in the above-mentioned embodiments and comparative examples were used to clean the copper film wafer (Cu dummywafer), and the corrosion of Cu was measured. Test method and conditions: The copper film wafer was immersed in the cleaning solution, and oscillated at a constant temperature oscillator at a vibration frequency of about 60 rpm for 15 minutes at 20-60°C, then washed with deionized water and dried with high-purity nitrogen, and the change in surface thickness before and after etching of the wafer was measured by a four-point probe instrument to obtain the result.

[0089] The cleaning solution prepared in the ratio is used to clean the wafer with cobalt film (Co dummy wafer) to measure its corrosion to Co. Test method and conditions: The cobalt film wafer is immersed in the cleaning solution, and oscillated at a constant temperature oscillator at a vibration frequency of about 60 rpm for 15 minutes at 20-60°C, then washed with deionized water and dried with high-purity nitrogen, and the change in surface thickness before and after etching of the wafer is measured by a four-point probe instrument to calculate the test results. See Table 3.

[0090] Table 3

[0091]

[0092] It can be seen from the above comparative effect examples and effect embodiments that whether it is the cleaning effect, the effect of inhibiting the corrosion of Cu or Co, or the etching speed of TiN, the cleaning solution of the present application is improved compared with the cleaning solution of the comparative example.

[0093] In Comparative Examples 1 and 2, the content of the oxidant in the composition was increased, resulting in an unstable pH value of the composition solution. After standing for 24 hours, the pH value of the solution was less than 5. Although the TiN etching corrosion rate can be greatly increased, the damage to Cu and Co is also increased.

[0094] In Comparative Examples 3 and 4, no chelating agent was added, which not only reduced the etching rate of TiN, but also significantly increased the corrosion rates of Cu and Co.

Claims

1. An application of a cleaning liquid, characterized in that: The cleaning liquid is used to clean semiconductor chips after etching and ashing; the raw materials of the cleaning liquid include the following components in mass fraction: 0.1-30% of oxidant, amine organic matter, fluoride, corrosion inhibitor, chelating agent, surfactant and water, the water makes up the balance, and the sum of the mass fractions of each component is 100%; the amine organic matter is nitrogen alkyl ammonium hydroxide and / or alcohol amine; the chelating agent is one or more of n-ethylene m-amine, polyethylene polyamine and nitrogen-containing organic acid that are unsubstituted or substituted with one or more C1-C4 alkyl groups; n is an integer of 2-10, and m is an integer of 3-10; the surfactant is EO-PO polymer L43; the cleaning liquid does not contain metal ions; The mass fraction of each component is the mass percentage of the mass of each component to the total mass of all components in the cleaning solution.

2. The use of the cleaning solution as claimed in claim 1, characterized in that: The cleaning solution meets one or more of the following conditions: (1) The pH of the cleaning solution is 5-13.5; (2) the oxidant is one or more of hydrogen peroxide, N-methylmorpholine oxide, benzoyl peroxide, tetrabutylammonium peroxymonosulfate, ozone, ammonium peroxydisulfate, peracetic acid, urea peroxide, nitric acid, ammonium chlorite, ammonium chlorate, ammonium iodate, ammonium perborate, ammonium perchlorate, ammonium periodate, ammonium persulfate, tetramethylammonium chlorite, tetramethylammonium chlorate, tetramethylammonium iodate, tetramethylammonium perborate, tetramethylammonium perchlorate, tetramethylammonium periodate, tetramethylammonium persulfate, urea peroxide and peracetic acid; (3) The azanyl ammonium hydroxide is tetramethyl ammonium hydroxide; (4) The alcohol amine is one or more of monoethanolamine, diethanolamine and triethanolamine; (5) The fluoride is one or more of hydrogen fluoride, ammonium fluoride, tetraalkylammonium fluoride, fluoroboric acid and ammonium tetrafluoroborate; (6) The corrosion inhibitor is benzotriazole, toluenetriazole, 5-phenyl-benzotriazole, 5-nitro-benzotriazole, 3-amino-5-mercapto-1,2,4-triazole, 1-amino-1,2,4-triazole, hydroxybenzotriazole, 2-(5-amino-pentyl)-benzotriazole, 1-amino-1,2,3-triazole, 1-amino-5-methyl-1,2,3-triazole, 3-amino-1,2,4-triazole, 3-mercapto-1,2,4-triazole, 3-isopropyl-1,2,4-triazole, 5-benzenethiol-benzotriazole, halogenated-benzotriazole, naphthotriazole, 2-mercaptobenzimidazole, 2-mercapto One or more of 1,3-dimethyl-2-imidazolidinone, 1,5-pentamethylenetetrazolyl, 1-phenyl-5-mercaptotetrazolyl, diaminomethyltriazine, imidazolinethione, mercaptobenzimidazole, 4-methyl-4H-1,2,4-triazole-3-thiol, 5-amino-1,3,4-thiadiazole-2-thiol and benzothiazole; (7) The n-ethylene-m-amine is diethylenetriamine and / or pentamethyldiethylenetriamine; (8) The nitrogen-containing organic acid is one or more of 2-aminoacetic acid, 2-aminobenzoic acid, iminodiacetic acid, nitrilotriacetic acid and ethylenediaminetetraacetic acid; and (9) The water is one or more of deionized water, distilled water and pure water.

3. The use of the cleaning solution as claimed in claim 2, characterized in that: The cleaning solution meets one or more of the following conditions: (1) The pH of the cleaning solution is 8-12; (2) The oxidant is hydrogen peroxide; (3) The alcohol amine is monoethanolamine and / or diethanolamine; (4) The fluoride is ammonium fluoride; (5) The corrosion inhibitor is benzotriazole; (6) The n-ethylene-m-amine is pentamethyldiethylenetriamine; (7) The nitrogen-containing organic acid is iminodiacetic acid; and (8) The water is deionized water.

4. The use of the cleaning solution as claimed in claim 1, characterized in that: The cleaning solution meets one or more of the following conditions: (1) The mass fraction of the oxidant is 0.5-20%; (2) The mass fraction of the amine organic matter is 0.01-20%; (3) The mass fraction of the fluoride is 0.01-15%; (4) The mass fraction of the corrosion inhibitor is 0.001-5%; (5) The mass fraction of the chelating agent is 0.001-5%; and (6) The mass fraction of the surfactant is 0.001-5%.

5. The use of the cleaning liquid as claimed in claim 4, characterized in that: The cleaning solution meets one or more of the following conditions: (1) The mass fraction of the oxidant is 5-20%; (2) The mass fraction of the amine organic matter is 0.1-15%; (3) The mass fraction of the fluoride is 0.1-10%; (4) The mass fraction of the corrosion inhibitor is 0.01-3%; (5) The mass fraction of the chelating agent is 0.01-3%; and (6) The mass fraction of the surfactant is 0.01-3%.

6. The use of the cleaning liquid as claimed in claim 5, characterized in that: The cleaning solution meets one or more of the following conditions: (1) The mass fraction of the oxidant is 15%; (2) The mass fraction of the amine organic matter is 13%; (3) The mass fraction of the fluoride is 2.5% or 5%; (4) The mass fraction of the corrosion inhibitor is 0.5%; (5) The mass fraction of the chelating agent is 1.5%; and (6) The mass fraction of the surfactant is 1%.

7. The use of the cleaning solution according to claim 1, characterized in that: The cleaning solution is the following scheme 1 or scheme 2; Solution 1: The raw materials of the cleaning solution include the following components by mass fraction: The oxidant is hydrogen peroxide; The mass fraction of the oxidant is 0.1-30%; The amine organic compound is one or more of tetramethylammonium hydroxide, monoethanolamine and diethanolamine; The mass fraction of the amine organic matter is 0.01-20%; The fluoride is ammonium fluoride; The mass fraction of the fluoride is 0.01-15%; The corrosion inhibitor is benzotriazole; The corrosion inhibitor is 0.001-5%; The chelating agent is pentamethyldiethylenetriamine and / or iminodiacetic acid; The mass fraction of the chelating agent is 0.001-5%; The mass fraction of the surfactant is 0.001-5%; The water is deionized water, and the deionized water makes up the balance; Solution 2 The raw materials of the cleaning solution include the following components by mass fraction: The oxidant is hydrogen peroxide; The mass fraction of the oxidant is 15%; The amine organic compound is one or more of tetramethylammonium hydroxide, monoethanolamine and diethanolamine; The mass fraction of the amine organic matter is 13%; The fluoride is ammonium fluoride; The mass fraction of the fluoride is 2.5% or 5%; The corrosion inhibitor is benzotriazole; The corrosion inhibitor is 0.5%; The chelating agent is pentamethyldiethylenetriamine and / or iminodiacetic acid; The mass fraction of the chelating agent is 1.5%; The mass fraction of the surfactant is 1%; The water is deionized water, and the deionized water makes up the balance.

8. The use of the cleaning solution according to claim 1, characterized in that: The raw materials of the cleaning solution include any combination of the following components in mass fraction: Combination 1: 15% hydrogen peroxide, 13% tetramethylammonium hydroxide, 2.5% ammonium fluoride, 0.5% benzotriazole, 1.5% pentamethyldiethylenetriamine, 1% EO-PO polymer L43 and deionized water, with deionized water making up the balance; Combination 2: 15% hydrogen peroxide, 13% tetramethylammonium hydroxide, 5% ammonium fluoride, 0.5% benzotriazole, 1.5% pentamethyldiethylenetriamine, 1% EO-PO polymer L43 and deionized water, with deionized water making up the balance; Combination 3: 15% hydrogen peroxide, 13% diethanolamine, 2.5% ammonium fluoride, 0.5% benzotriazole, 1.5% pentamethyldiethylenetriamine, 1% EO-PO polymer L43 and deionized water, with deionized water making up the balance; Combination 4: 15% hydrogen peroxide, 13% diethanolamine, 5% ammonium fluoride, 0.5% benzotriazole, 1.5% pentamethyldiethylenetriamine, 1% EO-PO polymer L43 and deionized water, with deionized water making up the balance; Combination 5: 15% hydrogen peroxide, 13% monoethanolamine, 2.5% ammonium fluoride, 0.5% benzotriazole, 1.5% pentamethyldiethylenetriamine, 1% EO-PO polymer L43 and deionized water, with deionized water making up the balance; Combination 6: 15% hydrogen peroxide, 13% monoethanolamine, 5% ammonium fluoride, 0.5% benzotriazole, 1.5% pentamethyldiethylenetriamine, 1% EO-PO polymer L43 and deionized water, with deionized water making up the balance; Combination 7: 15% hydrogen peroxide, 13% tetramethylammonium hydroxide, 2.5% ammonium fluoride, 0.5% benzotriazole, 1.5% iminodiacetic acid, 1% EO-PO polymer L43 and deionized water, with deionized water making up the balance; Combination 8: 15% hydrogen peroxide, 13% tetramethylammonium hydroxide, 5% ammonium fluoride, 0.5% benzotriazole, 1.5% iminodiacetic acid, 1% EO-PO polymer L43 and deionized water, with deionized water making up the balance; Combination 9: 15% hydrogen peroxide, 13% diethanolamine, 2.5% ammonium fluoride, 0.5% benzotriazole, 1.5% iminodiacetic acid, 1% EO-PO polymer L43 and deionized water, with deionized water making up the balance; Combination 10: 15% hydrogen peroxide, 13% diethanolamine, 5% ammonium fluoride, 0.5% benzotriazole, 1.5% iminodiacetic acid, 1% EO-PO polymer L43 and deionized water, with deionized water making up the balance; Combination 11: 15% hydrogen peroxide, 13% monoethanolamine, 2.5% ammonium fluoride, 0.5% benzotriazole, 1.5% iminodiacetic acid, 1% EO-PO polymer L43 and deionized water, with deionized water making up the balance; Combination 12: 15% hydrogen peroxide, 13% monoethanolamine, 5% ammonium fluoride, 0.5% benzotriazole, 1.5% iminodiacetic acid, 1% EO-PO polymer L43 and deionized water, with the balance being made up with deionized water.

9. The use of the cleaning solution according to any one of claims 1 to 8, characterized in that: The raw materials of the cleaning liquid are composed of the following components in mass fraction: the oxidant, the amine organic matter, the fluoride, the corrosion inhibitor, the chelating agent, the surfactant and water, and the water makes up the balance.

10. The use of the cleaning solution according to claim 1, characterized in that: The semiconductor chip is a copper interconnect or cobalt interconnect semiconductor chip; And / or, the cleaning temperature is 10-90°C, preferably 20-60°C, more preferably 40-45°C.

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