Spindle action position control method and system

Through the Spindle action position control method that does not rely on sensor detection, combined with fast-slow-fast speed change curve and rotation zero calculation, the problem of low positioning accuracy of Spindle in the existing technology is solved, and high-precision and stable Spindle action is achieved implement.

CN119220968APending Publication Date: 2024-12-31大连皓宇电子科技有限公司
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Patent Information

Application Number
CN202411351599.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-09-26
Publication Date
2024-12-31

AI Technical Summary

Technical Problem

The existing Spindle action position control method relies on sensor detection, and there are inevitable errors and signal delays, resulting in low positioning accuracy.

Method used

Using the Spindle action position control method that does not rely on sensor detection, the pre-calibrated working position and target position combine the fast-slow-fast continuous speed change curve and rotation zero calculation to realize the lifting and rotating action of Spindle to ensure high accuracy. The action execution.

Benefits of technology

It significantly improves the autonomy and accuracy of the system, avoids errors introduced by external signal interference or delay, and ensures high accuracy and stability of Spindle when rotating and returning to zero position.

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Abstract

The invention discloses a Spindle action position control method and system, and relates to the technical field of semiconductor manufacturing. The method comprises a Z-axis action control method, a fast-slow-fast continuous speed change curve is followed, and a Z axis lifts and places a wafer; according to the T-axis action control method, on the basis of the rotation zero position and the target position, a T axis achieves transfer of wafers between adjacent platforms through rotation. According to the method, the target position and the zero displacement can be accurately obtained in real time, and errors possibly introduced by external signal interference or delay are effectively avoided, so that high-precision action execution is ensured. According to the invention, an intelligent speed control strategy is introduced in the lifting process of the spindle. The high-speed moving mode is adopted when the wafer is far away from the wafer so as to save time, and the low-speed mode is automatically switched when the wafer is close to be lifted or placed so as to ensure that the action is stable and free of impact, so that the wafer is furthest protected from being influenced by mechanical stress, and the high stability and safety of the wafer in the lifting and placing process are realized.
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Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a spindle action position control method and system. Background Art

[0002] In the process chamber of the chemical vapor deposition equipment, the spindle transfers the wafer between various stations through lifting, rotating and other actions. The lifting position includes the safe low position, the wafer transfer position, and the rotation high position. The rotation position includes the zero position and the rotation target position. The spindle moves according to the debugging and calibrated position. Since the spindle will repeatedly rotate and lift during normal operation, the positioning accuracy is required to be high.

[0003] Most existing methods use photoelectric and other sensor detection methods to determine whether the axis has reached the target position, which will cause inevitable errors due to factors such as sensor accuracy and signal delay. Summary of the invention

[0004] The purpose of the present invention is to provide a spindle action position control method and system, which does not rely on sensor detection, and completes spindle lifting, rotation, zero return and other actions based on calibrated working position and target position.

[0005] According to a first aspect of an embodiment of the present disclosure, a spindle action position control method is provided, comprising the following steps:

[0006] The Z-axis motion control method follows a fast-slow-fast continuous speed change curve. The Z-axis lifts and lowers to pick up and place the wafer.

[0007] The T-axis motion control method is based on the rotation zero position and the target position. The T-axis realizes the transfer of the wafer between adjacent platforms by rotating.

[0008] In one embodiment, when the working position of the Z-axis is calibrated as a default mode, the Z-axis zero point is set according to the position of the stop block, and the safety low position, wafer transfer position, and rotation high position are determined to be fixed values ​​according to the height of the stage.

[0009] In one of the embodiments, when the working position of the Z-axis is calibrated as a free mode, the Z-axis zero point is set according to the position of the stop block, the rotation high position is more than L mm higher than the platform plane, the wafer transfer position is at the position where the tray finger contacts the wafer carrying ring, and the safety low position is below the transfer position; wherein the rotation high position> wafer transfer position> safety low position> Z-axis zero point. If this logic is not met, an alarm is issued.

[0010] In one embodiment, the continuous speed change curve includes a first fast interval, a slow interval, and a second fast interval, where the slow interval is within a fixed distance range above and below the wafer transfer position; before the Z-axis is lifted, it is first positioned at the safe low position. When rising, it enters the first fast interval and moves at high speed. When entering the slow interval, it decelerates to a uniform slow speed to slowly and stably lift the wafer; when the Z-axis leaves the slow interval and enters the second fast interval, it immediately accelerates to high speed and completes the rising action after reaching the rotation high position; when the Z-axis descends from the rotation high position, it moves at high speed in the second fast interval. When entering the slow interval, it decelerates to a uniform slow speed to slowly and stably place the wafer; when the Z-axis leaves the slow interval and enters the first fast interval, it immediately accelerates to high speed and completes the descending action after reaching the safe low position.

[0011] In one embodiment, if the Z-axis is not at the rotation high position when descending, it descends slowly at a slow speed to ensure the stability of the action.

[0012] In one embodiment, the target position Pt is obtained according to the rotation zero position of the T-axis:

[0013] Pt = P0 + 90 * C1 + 180 * C2 + 270 * C3 + 360 * C4

[0014] Where P0 is the rotation zero position, C1 is the number of 90-degree rotations, C2 is the number of 180-degree rotations, C3 is the number of 270-degree rotations, and C4 is the number of 360-degree rotations; after obtaining the target position, it is compared with the current actual position for inspection. If the error value is exceeded, an abnormal alarm is processed. Otherwise, the T-axis moves to this target position, where the rotation zero position is the middle position between any two adjacent platforms.

[0015] In one embodiment, if an abnormality occurs in the T-axis or the Z-axis, or if there is human interference during the power-off period of the axis, the T-axis performs a homing process, that is, the displacement from the current position of the T-axis to the nearest rotation zero position is obtained. The displacement acquisition method and the action mode of the T-axis are as follows:

[0016] Pr = (N - P0) mod 90;

[0017] When -90 < Pr < -45, the T-axis rotates counterclockwise by 90 + Pr degrees;

[0018] When -45 <= Pr < 0, the T-axis rotates clockwise by -Pr degrees;

[0019] When 0 < Pr <= 45, the T-axis rotates counterclockwise by Pr degrees;

[0020] When 45 < Pr < 90, the T-axis rotates clockwise by 90 - Pr degrees;

[0021] Where Pr is the displacement to the next zero position, N is the current actual position of the axis, and P0 is the rotation zero position.

[0022] According to a second aspect of an embodiment of the present disclosure, a spindle motion position control system is provided, comprising:

[0023] The Z-axis motion control method follows a fast-slow-fast continuous speed change curve. The Z-axis lifts and lowers to pick up and place the wafer.

[0024] The T-axis motion control method is based on the rotation zero position and the target position. The T-axis realizes the transfer of the wafer between adjacent platforms by rotating.

[0025] According to a third aspect of an embodiment of the present disclosure, an electronic device is provided, including a memory, a processor, and a computer program stored and running on the memory, wherein the processor implements the Spindle action position control method when executing the program.

[0026] According to a fourth aspect of an embodiment of the present disclosure, a computer-readable storage medium is provided, on which a computer program is stored, and when the program is executed by a processor, the spindle action position control method is implemented.

[0027] Compared with the prior art, the above technical solution adopted by the present invention has the following advantages: the present invention does not rely on external sensors for real-time monitoring, and obtains the target position through pre-calibrated working positions. This method significantly improves the autonomy of the system, and when performing key actions such as spindle rotation and zero position return, the target position and zero position displacement can be obtained in real time and accurately, effectively avoiding errors that may be introduced by external signal interference or delay, thereby ensuring high-precision action execution.

[0028] The present invention introduces an intelligent speed control strategy in the process of lifting and lowering the spindle. Specifically, the speed configuration is automatically adjusted according to the current real-time position of the spindle to achieve a "fast-slow-fast" speed change mode. When away from the wafer, fast movement is used to save time. When approaching the wafer for lifting or placing, it automatically switches to slow mode to ensure smooth and impact-free movement, thereby maximally protecting the wafer from mechanical stress and achieving high stability and safety of the wafer during lifting and placing. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The drawings in the specification, which constitute a part of the present application, are used to provide further understanding of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute improper limitations on the present application.

[0030] Figure 1 It is a schematic diagram of the fast-slow-fast continuous speed change curve. DETAILED DESCRIPTION

[0031] The present disclosure is further described below in conjunction with the accompanying drawings and embodiments.

[0032] It should be noted that the following detailed descriptions are illustrative and are intended to provide further explanation of the present application. Unless otherwise specified, all technical and scientific terms used herein have the same meanings as those commonly understood by those skilled in the art to which the present application belongs.

[0033] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.

[0034] It should be noted that the flowcharts and block diagrams in the accompanying drawings illustrate the possible implementation architecture, functions and operations of the methods and systems according to various embodiments of the present disclosure. It should be noted that each box in the flowchart or block diagram can represent a module, a program segment, or a part of a code, and the module, program segment, or a part of a code may include one or more executable instructions for implementing the logical functions specified in each embodiment. It should also be noted that in some alternative implementations, the functions marked in the box can also occur in an order different from that marked in the accompanying drawings. For example, two boxes represented in succession can actually be executed substantially in parallel, or they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the flowchart and / or block diagram, and the combination of boxes in the flowchart and / or block diagram can be implemented using a dedicated hardware-based system that performs a specified function or operation, or can be implemented using a combination of dedicated hardware and computer instructions.

[0035] The spindle includes a lifting axis, namely the Z axis, and a rotating axis, namely the T axis. Before normal operation, the safe low position, wafer transfer position, rotating high position of the lifting Z axis, and the safe zero position of the T axis are calibrated for the working position. The present invention controls and completes the normal action flow according to the calibrated working position.

[0036] Embodiment 1:

[0037] This embodiment provides a spindle motion position control method, comprising the following steps:

[0038] The Z-axis motion control method follows a fast-slow-fast continuous speed change curve. The Z-axis lifts and lowers to pick up and place the wafer.

[0039] Specifically, to ensure that the T-axis does not scratch other components during rotation and to ensure the stability of the wafer during lifting and placement, the Z-axis lifting follows a fast-slow-fast continuous speed change curve and moves strictly according to the work position. It is determined to have reached the target work position after reaching the allowable error range of the target work position and being stable for a certain period of time.

[0040] It should be noted that the Z-axis working position calibration is divided into two modes: default and free. In the default mode, the Z-axis zero point is set according to the block position, and the safety low position, wafer transfer position, and rotation high position are determined according to the height of the carrier to obtain fixed values, and normal operation can be performed. In the free mode, the above positions can be calibrated freely, the Z-axis zero point is set according to the block position, the rotation high position is higher than the platform plane by more than L mm, such as more than 2 mm; the wafer transfer position is at the position where the tray finger contacts the wafer carrying ring, and the safety low position is below the transfer position; the rotation high position> crystal transfer position> safety low position> Z-axis zero point. If it does not meet this logic, an alarm will be issued.

[0041] Among them, the continuous speed change curve includes the first fast interval, the slow interval, and the second fast interval, wherein the slow interval is within the fixed distance range above and below the wafer transfer position, for example, if the wafer transfer position is 100mm, then the slow interval is 95-105mm; the Z axis is first positioned at a safe low position before lifting, and enters the first fast interval at high speed when rising, and decelerates to a uniform slow speed when entering the slow interval to achieve slow and stable lifting of the wafer; when the Z axis leaves the slow interval and enters the second fast interval, it immediately accelerates to high speed, and completes the rising action after reaching the high rotation position; when the Z axis descends from the high rotation position, it is in the second fast interval at high speed, and decelerates to a uniform slow speed when entering the slow interval to achieve slow and stable placement of the wafer; wherein the high-speed movement interval is 30-60mm / s, and the uniform slow interval is 5-10mm / s. If the Z axis is not at the high rotation position when it descends, it will descend slowly at a slow speed to ensure the stability of the movement. Slow descent interval 1-3mm / s

[0042] The T-axis motion control method is based on the rotation zero position and the target position. The T-axis realizes the transfer of the wafer between adjacent platforms by rotating.

[0043] Specifically, the T-axis can transfer the wafer between the four platforms by rotating at 90°, 180°, 270° and other angles. The lifting and lowering action can only be performed when the T-axis is at the zero position, and the middle position between any two adjacent platforms can be used as the zero position. When rotating, the number of executions is recorded and saved according to the rotation angle; when a new rotation command is received, the target position Pt is obtained according to the zero position of the T-axis:

[0044] Pt=P0+90*C1+180*C2+270*C3+360*C4

[0045] Where P0 is the rotation zero position, C1 is the number of 90-degree rotations, C2 is the number of 180-degree rotations, C3 is the number of 270-degree rotations, and C4 is the number of 360-degree rotations; after obtaining the target position, compare it with the current actual position for inspection. If the error value is exceeded, an abnormal alarm is processed. Otherwise, the T-axis moves to the target position.

[0046] It should be noted that if an abnormality occurs in the T-axis or Z-axis, or if there is human interference rotation during the power-off of the axis, the T-axis performs a homing operation. That is, the displacement from the current position of the T-axis to the nearest rotation zero position is obtained to achieve homing nearby, reduce the action time, and improve the operation efficiency. The displacement acquisition method and the T-axis action method are as follows:

[0047] Pr = (N - P0) mod 90;

[0048] When -90 < Pr < -45, the T-axis rotates reversely by 90 + Pr degrees;

[0049] When -45 <= Pr < 0, the T-axis rotates forward by -Pr degrees;

[0050] When 0 < Pr <= 45, the T-axis rotates reversely by Pr degrees;

[0051] When 45 < Pr < 90, the T-axis rotates forward by 90 - Pr degrees;

[0052] Where Pr is the displacement to the next zero position, N is the current actual position of the axis, and P0 is the rotation zero position.

[0053] Embodiment 2:

[0054] This embodiment provides a Spindle action position control system, including:

[0055] A Z-axis action control method, following a continuous speed change curve of fast-slow-fast, and the Z-axis realizes the picking and placing of wafers through lifting.

[0056] A T-axis action control method, based on the rotation zero position and the target position, the T-axis realizes the transfer of wafers between adjacent platforms through rotation.

[0057] Embodiment 3:

[0058] An electronic device, including a memory, a processor, and a computer program running on the memory. When the processor executes the program, it implements the above-mentioned Spindle action position control method, including:

[0059] A Z-axis action control method, following a continuous speed change curve of fast-slow-fast, and the Z-axis realizes the picking and placing of wafers through lifting.

[0060] The T-axis motion control method is based on the rotation zero position and the target position. The T-axis realizes the transfer of the wafer between adjacent platforms by rotating.

[0061] Embodiment 4:

[0062] A computer-readable storage medium stores a computer program, which, when executed by a processor, implements the above-mentioned spindle motion position control method, including:

[0063] The Z-axis motion control method follows a fast-slow-fast continuous speed change curve. The Z-axis lifts and lowers to pick up and place the wafer.

[0064] The T-axis motion control method is based on the rotation zero position and the target position. The T-axis realizes the transfer of the wafer between adjacent platforms by rotating.

[0065] Those skilled in the art should understand that the modules or steps of the present disclosure can be implemented by a general-purpose computer device, or alternatively, they can be implemented by a program code executable by a computing device, so that they can be stored in a storage device and executed by the computing device, or they can be made into individual integrated circuit modules, or multiple modules or steps therein can be made into a single integrated circuit module for implementation. The present disclosure is not limited to any specific combination of hardware and software.

[0066] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

[0067] Although the above describes the specific implementation methods of the present disclosure in conjunction with the accompanying drawings, it is not intended to limit the scope of protection of the present disclosure. Technical personnel in the relevant field should understand that on the basis of the technical solution of the present disclosure, various modifications or variations that can be made by those skilled in the art without creative work are still within the scope of protection of the present disclosure.

Claims

1. A spindle action position control method, characterized in that: Including the following steps: Z-axis motion control method, following a fast-slow-fast continuous speed change curve, the Z-axis realizes the picking and placing of wafers through lifting and lowering; T-axis motion control method, based on the rotation zero position and the target position, the T-axis realizes the transfer of wafers between adjacent platforms through rotation.

2. A Spindle action position control method according to claim 1, characterized in that: When the working position of the Z-axis is calibrated in the default mode, the Z-axis zero point is set according to the position of the stopper, and the safety low position, wafer transfer position, and rotation high position are determined according to the height of the carrier stage to obtain fixed values.

3. A Spindle action position control method according to claim 1, characterized in that: When the working position of the Z-axis is calibrated in the free mode, the Z-axis zero point is set according to the position of the stopper, the rotation high position is more than L millimeters above the platform plane, the wafer transfer position is at the position where the tray finger contacts the wafer carrier ring, and the safety low position is below the transfer position; where the rotation high position > wafer transfer position > safety low position > Z-axis zero point, if this logic is not met, an alarm is issued.

4. A Spindle action position control method according to claim 1, characterized in that: The continuous speed change curve includes a first fast interval, a slow interval, and a second fast interval, where the slow interval is within a fixed distance range above and below the wafer transfer position; before the Z-axis lifts or lowers, it first positions to the safety low position, enters the first fast interval and moves at high speed when rising, decelerates to a uniform slow speed when entering the slow interval to slowly and stably lift the wafer; when the Z-axis leaves the slow interval and enters the second fast interval, it immediately accelerates to high speed and completes the rising action after reaching the rotation high position; when the Z-axis descends from the rotation high position, it moves at high speed in the second fast interval, decelerates to a uniform slow speed when entering the slow interval to slowly and stably place the wafer; when the Z-axis leaves the slow interval and enters the first fast interval, it immediately accelerates to high speed and completes the descending action after reaching the safety low position.

5. A Spindle action position control method according to claim 4, characterized in that: If the Z-axis is not at the rotation high position when descending, it descends slowly at a slow speed to ensure the stability of the action.

6. A Spindle action position control method according to claim 1, characterized in that: Obtain the target position Pt based on the rotation zero position of the T-axis: Pt = P0 + 90 * C1 + 180 * C2 + 270 * C3 + 360 * C4 where P0 is the rotation zero position, C1 is the number of 90-degree rotations, C2 is the number of 180-degree rotations, C3 is the number of 270-degree rotations, and C4 is the number of 360-degree rotations; After obtaining the target position, compare it with the current actual position. If the error value is exceeded, an abnormal alarm is processed. Otherwise, the T-axis moves to this target position, where the rotation zero position is the middle position between any two adjacent platforms.

7. A Spindle action position control method according to claim 1, characterized in that: If an abnormality occurs in the T-axis or Z-axis, or if there is human interference rotation during the power-off of the axis, the T-axis performs a homing process, that is, obtain the displacement from the current position of the T-axis to the nearest rotation zero position. The displacement acquisition method and the T-axis motion method are: Pr = (N - P0) mod 90; When -90 < Pr < -45, the T-axis rotates reversely by 90 + Pr degrees; When -45 <= Pr < 0, the T-axis rotates forward by -Pr degrees; When 0 < Pr <= 45, the T-axis rotates reversely by Pr degrees; When 45 < Pr < 90, the T-axis rotates forward by 90 - Pr degrees; where Pr is the displacement to the next zero position, N is the actual current position of the axis, and P0 is the rotation zero position.

8. A spindle motion position control system, characterized in that: Including: Z-axis motion control method, following a fast-slow-fast continuous speed change curve, the Z-axis realizes the picking and placing of wafers through lifting and lowering; The T-axis motion control method is based on the rotation zero position and the target position. The T-axis realizes the transfer of the wafer between adjacent platforms by rotating.

9. An electronic device comprising a memory, a processor and a computer program stored and running on the memory, characterized in that: When the processor executes the program, a spindle motion position control method as described in any one of claims 1 to 7 is implemented.

10. A computer-readable storage medium having a computer program stored thereon, wherein when the program is executed by a processor, the spindle motion position control method according to any one of claims 1 to 7 is implemented.

Citation Information

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