System and method for interconnection of MOCVD (Metal Organic Chemical Vapor Deposition) and MBE wafer

Abstract

The system comprises an MOCVD growth chamber, an MOCVD transition chamber, an MOCVD transmission chamber, a first chamber, a second chamber, a third chamber, a CDC chamber and an MBE growth chamber which are in butt joint in sequence, and the adjacent chambers are isolated through isolation valves; conveying a small graphite disc for bearing a wafer between the MOCVD transition chamber and the first chamber by using a first manipulator; a wafer hooking device in the first chamber is used for hooking the wafer from the small graphite plate; a turnover device in the second chamber is used for realizing wafer turnover; wafers are conveyed in the first cavity, the second cavity and the third cavity through the sample conveying rod. And conveying the large molybdenum tray for bearing the wafer between the third chamber and the MBE growth chamber by using the second manipulator. The device has the advantages of being compact in structure, convenient to operate, high in stability and the like, does not need to make contact with a wafer growth face, and reduces the risks of wafer surface damage and contact pollution.

Description

Technical Field

[0001] The invention relates to the field of crystal growth, equipment and process technology, and in particular to a system and method for interconnecting MOCVD and MBE wafers. Background Art

[0002] Metal organic chemical vapor deposition system (MOCVD) is a new type of vapor phase epitaxial growth technology developed on the basis of vapor phase epitaxy (VPE). Molecular beam epitaxy system (MBE) is a physical deposition technology for compound semiconductor multilayer films. MOCVD and MBE are two commonly used epitaxial growth equipment in the semiconductor field, and are widely used in the development and large-scale production of optoelectronics and microelectronic chips. MOCVD technology uses organic compounds of group III and group II elements and hydrides of group V and VI elements as crystal growth source materials, and performs vapor phase epitaxy on the substrate by thermal decomposition reaction. The vacuum degree of the growth chamber is about 100Torr. It has the advantages of high speed, low cost, high control flexibility, good process repeatability and simpler equipment structure, and has become the most popular epitaxial growth technology on the market.

[0003] The basic principle of MBE is that under ultra-high vacuum conditions, the vapor generated by heating a furnace filled with various required components is directly sprayed onto a single crystal wafer at an appropriate temperature to form a molecular beam or atomic beam after being straightened by a small hole. At the same time, the molecular beam is controlled to scan the wafer, so that the molecules or atoms can grow layer by layer on the wafer according to the crystal arrangement to form a thin film. Due to its excellent material growth quality, precise material thickness control ability and extremely high material purity during growth, it is suitable for low-temperature growth materials represented by arsenides and antimonides. MOCVD and MBE also have their inherent disadvantages: MOCVD uses a gas source, which inevitably introduces impurities, a low vacuum environment, and relatively poor film quality; MBE has a slow growth rate because the material growth requires an ultra-high vacuum environment, and its operating cost is high, and its production efficiency is low, so it has not been able to achieve large-scale application.

[0004] MOCVD and MBE have many intersections in practical applications, and the use of MOCVD+MBE alternating growth can achieve complementary advantages. MOCVD and MBE are independent systems, and the wafer carrying forms of the two are quite different: the growth surface of the MOCVD wafer is upward, and the back contact is placed in each small graphite disk, and the small graphite disk driven by air flotation is placed in a large graphite disk driven by a motor. The growth surface of the MBE wafer is downward, and the edge contact is placed in each wafer position of the molybdenum tray. Because there are also large differences between the MOCVD graphite disk and the MBE molybdenum tray, when the two equipment are used alternately in the actual production process, the samples between the two systems are manually transferred, and the temperature needs to be lowered and heated during the transfer and exposed to the atmosphere, which has the disadvantages of long time, low efficiency, and easy surface contamination leading to reduced material quality, and cannot give full play to the advantages of the two systems.

[0005] Chinese patents CN219132311U and CN215628426U proposed a vacuum interconnection system for interaction between MOCVD and MBE samples. However, the technical solution did not point out the specific implementation method of sample interaction. Chinese patent CN219132311U supplemented the explanation that the concept is realized by a vacuum high-temperature multi-axis manipulator, and the peripheral area of ​​the wafer is clamped by two jaws moving in opposite directions. In actual applications, the wafer is placed in the grooves of the MOCVD graphite disk or the MBE molybdenum tray, and there is no space around the wafer for the jaws to clamp or release the wafer. The multi-axis manipulator is required to have X-axis, Y-axis, and Z-axis translational movement as well as X-axis and Z-axis rotation functions. In the scheme shown, the motors or cylinders are all installed in the sample transfer chamber. In practice, it is difficult for a motor or cylinder to meet 10 - 7 Torr vacuum and 200℃ high temperature environment requirements.

[0006] Chinese patent application CN116377572A proposes a vacuum interconnected sample transfer system for MOCVD and MBE sample interaction, which uses the electrostatic adsorption chuck on the first robot arm to grab and flip the wafer, and the second robot arm to grab and transfer the wafer carrier. Taking the transfer of samples from MOCVD to MBE as an example, the electrostatic adsorption chuck grabs the front of the wafer from the MOCVD graphite disk in a non-contact manner and flips it, so that the growth surface of the wafer is placed downward on the sample platform of the center correction module, and the wafer is pushed by the clamping component to correct the center position. Finally, the back of the wafer is grabbed by the electrostatic adsorption chuck and transferred to the MBE molybdenum tray. During the position correction process, the growth surface of the wafer will inevitably slide and rub against the sample platform, which contradicts the original intention of using an electrostatic adsorption chuck to avoid wafer surface damage and contact contamination. The vacuum electrostatic adsorption chuck usually has a maximum temperature resistance of 100°C, which makes it difficult to achieve the high-temperature sample transfer requirement of 300°C.

[0007] Chinese patent application CN118127617A proposes a vacuum interconnection system and method for MOCVD and MBE sample interaction, which transfers a small graphite disk to a large molybdenum tray and then flips the entire disk. Because the graphite disk is composed of graphite, the graphite disk will inevitably produce particles that contaminate the wafer surface due to friction and vibration during the flipping process. Summary of the invention

[0008] The technical problem to be solved by the present invention is as follows: In view of the above-mentioned problems in the prior art, a system and method for interconnecting MOCVD and MBE wafers is provided, which has a compact structure, high stability and is conducive to ensuring the cleanliness of the wafers.

[0009] In order to solve the above technical problems, the technical solution adopted by the present invention is:

[0010] A system for interconnecting MOCVD and MBE wafers, comprising a MOCVD growth chamber, a MOCVD transition chamber, a MOCVD transfer chamber, a first chamber, a second chamber, a third chamber, a CDC chamber and an MBE growth chamber connected in sequence, wherein adjacent chambers are isolated by isolation valves;

[0011] The MOCVD transition chamber is provided with a large graphite disk, and the large graphite disk is provided with a small graphite disk, and the small graphite disk is used to carry wafers; the MOCVD transfer chamber is provided with a first robot, and the first robot is used to realize the transfer of the small graphite disk carrying the wafer between the MOCVD transition chamber and the first chamber; the first chamber is provided with a hook device and a lifting platform, and the lifting platform is used to carry the small graphite disk and drive the small graphite disk to rise and fall, and the hook device is used to realize the wafer being hooked from the small graphite disk; the second chamber is provided with a flipping device, and the flipping device includes a tray assembly, a vertical lifting assembly and a horizontal flipping assembly, and the tray assembly is used to carry The wafer, the vertical lifting assembly is used to drive the tray assembly to lift, and the horizontal flipping assembly is used to drive the tray assembly to flip, so as to realize the wafer flipping; the third chamber is provided with a large molybdenum tray for carrying the wafer, and the side of the second chamber is provided with a first sample transfer rod, and the first sample transfer rod moves through the first chamber and the second chamber to realize the wafer transfer; the side of the second chamber is also provided with a second sample transfer rod, and the second sample transfer rod moves through the second chamber and the third chamber to realize the wafer transfer; the CDC chamber is provided with a second robot, and the second robot is used to realize the transfer of the large molybdenum tray carrying the wafer between the third chamber and the MBE growth chamber.

[0012] As a further improvement of the present invention, the hook device includes a first driving member, a guide rod and a hook claw; the first driving member is arranged outside the first chamber, one end of the guide rod is connected to the output end of the first driving member, the other end of the guide rod extends into the first chamber through the connecting port seal, and a hook claw is provided at the end of the guide rod; driven by the first driving member, the guide rod moves in the first chamber and extends above the wafer, the lifting platform rises, the guide rod retracts in the first chamber, driving the hook claw to hook the notch on the wafer to hook the wafer, so as to facilitate the sample transfer rod to take the wafer away separately.

[0013] As a further improvement of the present invention, the hook device also includes a bellows and a sealing assembly. The bellows is sleeved on the outside of the guide rod, one end of the bellows is sealed connected to the end of the guide rod, and the other end of the bellows is sealed connected to the connecting port through the sealing assembly.

[0014] As a further improvement of the present invention, the vertical lifting assembly includes a first magnetic rod assembly and a second magnetic rod assembly with the same structure and symmetrically arranged in the second chamber, and a lifting mechanism is provided above the first magnetic rod assembly; the tray assembly includes a first tray and a second tray with the same structure, the first magnetic rod assembly is detachably connected to the first tray, and the second magnetic rod assembly is detachably connected to the second tray; when the sample transfer rod transfers the wafer to the second chamber, the first magnetic rod assembly drives the first tray to rise to the bottom of the sample transfer rod, the lifting mechanism rises and falls to receive the wafer, and places the wafer on the first tray, and the second magnetic rod assembly drives the second tray to descend and cover the first tray.

[0015] As a further improvement of the present invention, the horizontal flipping assembly includes a third magnetic rod assembly and a fourth magnetic rod assembly with the same structure and symmetrically arranged in the second chamber, the third magnetic rod assembly includes a horizontal magnetic rod, a square pin and a driving member, one end of the horizontal magnetic rod is connected to the output shaft of the driving member, and the other end of the horizontal magnetic rod is connected to the square pin, and the square pin is used to clamp the side of the first tray and the second tray; under the drive of the driving member, the horizontal magnetic rod drives the first tray and the second tray to rotate 180° through the square pin to realize wafer flipping.

[0016] As a further improvement of the present invention, the first magnetic rod assembly includes a vertical magnetic rod, a screw member and a second driving member, one end of the vertical magnetic rod is connected to the output shaft of the second driving member, and the other end of the vertical magnetic rod is connected to the screw member, and a screw hole matching the screw member is provided at the center position of the first tray; under the drive of the second driving member, the vertical magnetic rod drives the screw member to screw in or out of the screw hole, and drives the first tray to rise and fall.

[0017] As a further improvement of the present invention, a plurality of ejector pin holes are evenly distributed on the first tray; the lifting mechanism comprises a supporting plate, a supporting rod, an ejector pin and a third driving member; a through hole is provided in the middle of the supporting plate, and the vertical magnetic rod and the screw member pass through the through hole to be connected to the first tray; a plurality of supporting rods are evenly distributed on the supporting plate, and an ejector pin is provided on the supporting rod, and both the supporting rod and the ejector pin can pass through the ejector pin hole; when the sample transfer rod transfers the wafer to the second chamber, under the drive of the third driving member, the supporting plate drives the ejector pin to rise and fall through the ejector pin hole to receive the wafer and place the wafer on the first tray.

[0018] As a further improvement of the present invention, slots are symmetrically provided on the side of the first tray. When the second tray is covered with the first tray, the horizontal magnetic rod drives the square pin to move horizontally and be clamped in the slot.

[0019] As a further improvement of the present invention, supporting ears and a plurality of positioning ears are provided on the inner edge of the first tray; the positioning ears are used to assist in positioning the wafer in the first tray; when the second tray is covered with the first tray, the gap between the supporting ears in the second tray and the supporting ears in the first tray is equivalent to the thickness of the wafer, so as to realize flexible flipping of the wafer in the second tray and the first tray.

[0020] As a general technical concept, the present invention also provides a method for interconnecting MOCVD and MBE wafers, comprising the following steps:

[0021] Step S1, a large graphite disk is fixed in an MOCVD transition chamber, and a small graphite disk is placed in the large graphite disk;

[0022] Step S2: the first robot grabs the small graphite plate carrying the wafer from the large graphite plate and moves it to the first chamber;

[0023] Step S3, start the first driving member, the guide rod drives the hook claw to extend above the wafer, the lifting platform rises, the hook claw hooks the notch, the guide rod drives the hook claw to retract, and drives the wafer to be hooked up from the small graphite plate at an angle of θ, the first sample transfer rod passes between the wafer and the small graphite plate, the first driving member drives the guide rod to drive the hook claw to descend, so that the wafer falls onto the first sample transfer rod; at this time, the front side of the wafer faces upward;

[0024] Step S4: the first sample transfer rod transfers the wafer to the second chamber, and the magnetic rod of the first magnetic rod assembly drives the first tray to rise and stay under the first sample transfer rod;

[0025] Step S5, the lifting mechanism rises, the ejector pin passes through the first tray to lift up the wafer on the first sample transfer rod, and the first sample transfer rod exits the second chamber;

[0026] Step S6, the lifting mechanism drives the wafer to descend so as to fall into the first tray; the magnetic rod of the second magnetic rod assembly drives the second tray to descend so that the surface of the second tray contacts the surface of the first tray;

[0027] Step S7, the magnetic rods of the third magnetic rod assembly and the magnetic rods of the fourth magnetic rod assembly extend from both sides of the second chamber respectively, and the square pins extend into the slots of the first tray and the second tray; the magnetic rods of the first magnetic rod assembly and the magnetic rods of the second magnetic rod assembly are separated from the first tray and the second tray respectively, and exit the second chamber;

[0028] Step S8, the magnetic rods of the third magnetic rod assembly and the magnetic rods of the fourth magnetic rod assembly are simultaneously rotated 180° to achieve 180° flipping of the wafers in the first tray and the second tray, at which time, the front side of the wafers faces downward;

[0029] Step S9, the magnetic rods of the first magnetic rod assembly and the magnetic rods of the second magnetic rod assembly enter the second chamber again and are connected to the first tray and the second tray respectively, and the magnetic rods of the third magnetic rod assembly and the magnetic rods of the fourth magnetic rod assembly exit the second chamber;

[0030] Step S10, the magnetic rod of the second magnetic rod assembly drives the second tray to separate from the first tray, the lifting mechanism rises, and the ejector pin passes through the first tray to lift the wafer;

[0031] Step S11, the second sample transfer rod enters the second chamber and is located below the wafer, the lifting mechanism descends, and the wafer falls onto the second sample transfer rod;

[0032] Step S12, the second sample transfer rod drives the wafer into the third chamber, the lifting mechanism in the third chamber lifts the wafer, the second sample transfer rod exits the third chamber, and the lifting mechanism in the third chamber places the wafer on the large molybdenum tray;

[0033] Step S13, repeating steps S2 to S12 to achieve the transfer of all wafers in the large graphite tray to the large molybdenum tray;

[0034] Step S14: the second robot in the CDC chamber moves to the third chamber to grab the large molybdenum tray, and moves it to the MBE growth chamber to complete the process.

[0035] Compared with the prior art, the advantages of the present invention are:

[0036] 1. The system for interconnecting MOCVD and MBE wafers of the present invention has a hook device arranged in the first chamber, and the hook device is used to lift the wafer from the small graphite disk, and then the wafer is transferred to the second chamber separately by the sample transfer rod, and placed on the flip device in the second chamber, and the wafer is flipped separately by the flip device. During the wafer transmission and flipping process, there is no need to contact the growth surface of the wafer, thereby reducing the risk of wafer surface damage and contact contamination; and there is no need to clamp the peripheral area of ​​the wafer, thereby reducing the risk of fragmentation caused by extrusion stress; the wafer is transferred from the MOCVD system to the MBE system separately, thereby avoiding the contamination of unnecessary materials such as graphite, and realizing clean, efficient and safe transfer of wafers between carriers of different specifications, realizing two-way automatic sample transfer from MOCVD to MBE or MBE to MOCVD, truly realizing MOCVD+MBE vacuum interconnection and process interconnection, giving full play to the advantages of the two devices, significantly improving process performance and production efficiency, and providing possibilities for the development of special materials and new devices.

[0037] 2. The method for interconnecting MOCVD and MBE wafers of the present invention realizes the clean, efficient and safe transfer of wafers between carriers of different specifications, and realizes the two-way automatic sample transfer from MOCVD to MBE or MBE to MOCVD, truly realizing the vacuum interconnection and process interconnection of MOCVD+MBE, giving full play to the advantages of the two devices, and significantly improving the process performance and production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 It is a schematic diagram of the structural principle of the MOCVD and MBE wafer interconnection system in a specific embodiment of the present invention;

[0039] Figure 2 It is a schematic diagram of the structural principle of a hook device located above a wafer in a specific embodiment of the present invention;

[0040] Figure 3 It is a schematic diagram of the structural principle of the hook device contacting the wafer in a specific embodiment of the present invention;

[0041] Figure 4 It is a schematic diagram of the structural principle of a hooking device hooking a wafer in a specific embodiment of the present invention;

[0042] Figure 5 It is a schematic diagram of the structural principle of the turning device in a specific embodiment of the present invention;

[0043] Figure 6 A partial cross-sectional schematic diagram of the structure principle of the turning device in a specific embodiment of the present invention

[0044] Figure 7 It is a schematic diagram of the structural principle of a vertical magnetic rod in a specific embodiment of the present invention;

[0045] Figure 8 It is a schematic diagram of the structural principle of a tray in a specific embodiment of the present invention;

[0046] Fig. 9 It is a schematic diagram of the structural principle of the lifting mechanism in a specific embodiment of the present invention;

[0047] Fig.10 It is a schematic diagram of the structural principle of the horizontal magnetic rod in a specific embodiment of the present invention;

[0048] Fig.11 It is a schematic diagram of the structural principle of the MOCVD graphite disk in a specific embodiment of the present invention; wherein the wafer growth surface is upward;

[0049] Fig.12 It is a schematic diagram of the structural principle of the MBE large molybdenum tray in a specific embodiment of the present invention; wherein the wafer growth surface is downward;

[0050] Fig.13 It is a schematic diagram of the process of interconnecting MOCVD and MBE wafers in a specific embodiment of the present invention;

[0051] Legend: 1. MOCVD growth chamber; 2. MOCVD transition chamber; 3. MOCVD transfer chamber; 4. First chamber; 5. Second chamber; 6. Third chamber; 7. CDC chamber; 8. MBE growth chamber; 21. Large graphite disk; 211. Small graphite disk; 2111. Wafer; 21111. Notch; 31. First manipulator; 41. Isolation valve; 42. Hook device; 421. First drive member; 422. Bellows; 423. Sealing assembly; 424. Guide rod; 425. Hook; 426. Connector; 427. Lifting platform; 51. First sample transfer rod; 52. First magnetic rod assembly; 521 , vertical magnetic rod; 522, screw member; 523, second driving member; 53, first tray; 531, ejector hole; 532, screw hole; 533, positioning ear; 534, supporting ear; 535, slot hole; 54, lifting mechanism; 541, supporting plate; 5411, through hole; 542, supporting rod; 543, ejector; 544, adjusting hole; 545, third driving member; 55, second magnetic rod assembly; 56, second tray; 57, third magnetic rod assembly; 571, horizontal magnetic rod; 572, square pin; 58, fourth magnetic rod assembly; 59, second sample transfer rod; 61, large molybdenum tray; 71, second manipulator. DETAILED DESCRIPTION

[0052] The present invention is further described below in conjunction with the accompanying drawings and specific preferred embodiments, but the protection scope of the present invention is not limited thereby.

[0053] In the description of the present invention, it should be understood that the terms "side", "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0054] In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, "multiple" means two or more, unless otherwise clearly and specifically defined.

[0055] MBE: Molecular beam epitaxy.

[0056] MOCVD: Metal Organic Chemical Vapor Deposition, metal organic chemical vapor deposition.

[0057] Example 1

[0058] like Figures 1 to 12 As shown, the system for interconnecting MOCVD and MBE wafers of the present invention comprises a MOCVD growth chamber 1, a MOCVD transition chamber 2, a MOCVD transfer chamber 3, a first chamber 4, a second chamber 5, a third chamber 6, a CDC chamber 7 and an MBE growth chamber 8 which are connected in sequence, and adjacent chambers are isolated by an isolation valve 41. Figure 1 As shown, the MOCVD transition chamber 2 and the MOCVD transfer chamber 3, the MOCVD transfer chamber 3 and the first chamber 4, the first chamber 4 and the second chamber 5, the second chamber 5 and the third chamber 6, and the third chamber 6 and the CDC chamber 7 are isolated from each other by the gate valve 41. The gate valves used to isolate each chamber should meet the requirements of ultra-high vacuum applications and support high-temperature operation at 300°C. When the gate valve 41 is opened, the adjacent chambers are connected, and conversely, when the gate valve 41 is closed, the adjacent chambers are isolated, that is, they are no longer connected. In other embodiments, different functional modules can be added according to different needs, or the layout positions of each chamber can be changed. As long as the vacuum interconnection and sample interaction between MOCVD and MBE can be achieved, the solution of this embodiment can be adopted.

[0059] As can be seen, each chamber is provided with a vacuum control module including a vacuum pump, a vacuum gauge, an air filling pipeline, etc. The first chamber 4, the second chamber 5 and the third chamber 6 can share the vacuum control module. The vacuum degree of the MBE growth chamber 8 is usually 5×10 -11 Torr~10 -10 Torr, the vacuum degree of the MBE buffer chamber (CDC chamber 7) is usually 5×10 -10 Torr~10 -8 Torr, the vacuum degree of the second chamber 5 and the third chamber 6 is usually 5×10 -9 Torr~10 -7 Torr, the vacuum degree of MOCVD transition chamber 2 is usually 5×10 -8 Torr~5×10 -2 Torr, the vacuum degree of MOCVD growth chamber 1 is usually 10 -2 Torr~100Torr. Different vacuum pump combinations are equipped according to the vacuum degree required for each chamber, including but not limited to cryopumps, ion pumps, molecular pumps, dry vacuum pumps, etc. Different vacuum gauges are equipped according to the vacuum degree required for each chamber, including but not limited to Pirani gauges, bare ion gauges, full-range vacuum gauges, etc.

[0060] like Figure 1 and Fig.11As shown, a large graphite disk 21 is provided in the MOCVD transition chamber 2, and a small graphite disk 211 is provided in the large graphite disk 21, and the small graphite disk 211 is used to carry the wafer 2111. A first manipulator 31 is provided in the MOCVD transfer chamber 3, and the first manipulator 31 is used to realize the transfer of the small graphite disk 211 carrying the wafer 2111 between the MOCVD transition chamber 2 and the first chamber 4. The first manipulator 31 satisfies polar coordinate motion (i.e., 360° rotation and arm extension), and the manipulator form includes but is not limited to frog arm type, linear slide type, etc. The manipulator is driven by a motor or a cylinder, and the motor or the cylinder is placed outside the vacuum chamber and is driven by magnetic coupling. A hook device 42 and a lifting platform 427 are provided in the first chamber 4, and the lifting platform 427 is used to carry the small graphite disk 211 and drive the small graphite disk 211 to rise and fall, and the hook device 42 is used to realize the wafer 2111 being hooked up from the small graphite disk 211. Through the cooperation of the hook device 42 and the lifting platform 427, the wafer 2111 is transferred from the small graphite plate 211 to the sample transfer rod 51. The second chamber 5 is provided with a flipping device, which includes a tray assembly, a vertical lifting assembly and a horizontal flip assembly. The tray assembly is used to carry the wafer 2111, the vertical lifting assembly is used to drive the tray assembly to rise and fall, and the horizontal flip assembly is used to drive the tray assembly to flip, so as to realize the flipping of the wafer 2111. The third chamber 6 is provided with a large molybdenum tray 61 for carrying the wafer 2111, as well as a lifting mechanism (not shown in the figure), and a rotating mechanism (not shown in the figure). The lifting mechanism is used to drive the large molybdenum tray 61 to rise and fall to receive the wafer 2111. The rotating mechanism can carry the large molybdenum tray 61 thereon to perform a 360° rotation movement, which is transmitted by magnetic coupling. The side of the second chamber 5 is provided with a first sample transfer rod 51, which moves through the first chamber 4 and the second chamber 5 to realize the transfer of the wafer 2111. Specifically, the front end of the first sample transfer rod 51 has a gripper, and the gripper is provided with a groove, which can support the wafer 2111 and can make horizontal linear motion. The first sample transfer rod 51 can move through the second chamber 5 to the first chamber 4. The side of the second chamber 5 is also provided with a second sample transfer rod 59, and the second sample transfer rod 59 moves through the second chamber 5 and the third chamber 6 to realize the transfer of the wafer 2111. Specifically, the front end of the second sample transfer rod 59 has a gripper, and the gripper is provided with a groove, which can support the wafer 2111 and can make horizontal linear motion. The second sample transfer rod 59 can move through the second chamber 5 to the third chamber 6. Figure 1As shown in the figure, the first sample transfer rod 51 and the second sample transfer rod 59 are arranged perpendicularly to each other on the side of the second chamber 5, and do not interfere with each other. A second manipulator 71 is provided in the CDC chamber 7, and the second manipulator 71 is used to realize the transfer of the large molybdenum tray 61 carrying the wafer 2111 between the third chamber 6 and the MBE growth chamber 8. The second manipulator 71 satisfies polar coordinate motion (i.e., 360° rotation and arm extension), and the manipulator forms include but are not limited to frog arm type, linear slide type, etc. The manipulator is driven by a motor or a cylinder, which is placed outside the vacuum chamber and is driven by magnetic coupling.

[0061] like Figure 2 , Figure 3 and Figure 4 As shown, the hook device 42 includes a first driving member 421, a guide rod 424 and a hook 425. The first driving member 421 is arranged outside the first chamber 4, one end of the guide rod 424 is connected to the output end of the first driving member 421, and the other end of the guide rod 424 extends into the first chamber 4 through the connection port 426 in a sealed manner, and a hook 425 is provided at the end of the guide rod 424. Driven by the first driving member 421, the guide rod 424 moves in the first chamber 4 and extends above the wafer 2111, the lifting platform 427 rises, and the guide rod 424 retracts in the first chamber 4, driving the hook 425 to hook the notch 21111 on the wafer 2111 to hook up the wafer 2111 and ensure that the wafer 2111 will not fall, so as to facilitate the sample transfer rod 51 to take the wafer 2111 away separately. The first driving member 421 can be driven by a motor or a cylinder.

[0062] Furthermore, the hook device 42 also includes a bellows 422 and a sealing assembly 423. The bellows 422 is sleeved on the outside of the guide rod 424. One end of the bellows 422 is sealed and connected to the end of the guide rod 424. The other end of the bellows 422 is sealed and connected to the connection port 426 through the sealing assembly 423. During the movement of the guide rod 424, the bellows 422 is extended and retracted accordingly to ensure the vacuum degree in the first chamber 4. The guide rod 424 extends to the top of the notch 21111 of the wafer 2111. Figure 2 The lifting platform 427 rises until the hook 425 contacts the notch 21111, Figure 3 The guide rod 424 hooks up the wafer 2111, Figure 4 Status shown.

[0063] like Figure 5As shown, the vertical lifting assembly includes a first magnetic rod assembly 52 and a second magnetic rod assembly 55 of the same structure and symmetrically arranged in the second chamber 5, and a lifting mechanism 54 is provided above the first magnetic rod assembly 52. ​​The tray assembly includes a first tray 53 and a second tray 56 of the same structure, the first magnetic rod assembly 52 is detachably connected to the first tray 53, and the second magnetic rod assembly 55 is detachably connected to the second tray 56. When the sample transfer rod 51 transfers the wafer 2111 to the second chamber 5, the first magnetic rod assembly 52 drives the first tray 53 to rise to the bottom of the sample transfer rod 51, the lifting mechanism 54 rises and falls to receive the wafer 2111, and places the wafer 2111 on the first tray 53, and the second magnetic rod assembly 55 drives the second tray 56 to descend and cover the first tray 53.

[0064] like Figure 5 , Figure 6 and Fig.10 As shown, the horizontal flip assembly includes a third magnetic rod assembly 57 and a fourth magnetic rod assembly 58 of the same structure and symmetrically arranged in the second chamber 5. The third magnetic rod assembly 57 includes a horizontal magnetic rod 571, a square pin 572 and a driving member (not shown in the figure), one end of the horizontal magnetic rod 571 is connected to the output shaft of the driving member, and the other end of the horizontal magnetic rod 571 is connected to the square pin 572, and the square pin 572 is used to clamp the side of the first tray 53 and the second tray 56. Under the drive of the driving member, the horizontal magnetic rod 571 drives the first tray 53 and the second tray 56 to rotate 180° through the square pin 572 to realize the flipping of the wafer 2111.

[0065] like Figure 5 , Figure 7 and Figure 8 As shown, the first magnetic rod assembly 52 includes a vertical magnetic rod 521, a screw member 522 and a second driving member 523. One end of the vertical magnetic rod 521 is connected to the output shaft of the second driving member 523, and the other end of the vertical magnetic rod 521 is connected to the screw member 522. A screw hole 532 matching the screw member 522 is provided at the center of the first tray 53. Driven by the second driving member 523, the vertical magnetic rod 521 drives the screw member 522 to screw in or out of the screw hole 532, and drives the first tray 53 to rise and fall. That is, the second driving member 523 drives the vertical magnetic rod 521 to rotate and to rise and fall.

[0066] like Figure 8 As shown, four ejector pin holes 531 are evenly distributed on the first tray 53. Fig. 9As shown, the lifting mechanism 54 includes a support plate 541, a support rod 542, an ejector pin 543 and a third driving member 545. A through hole 5411 is provided in the middle of the support plate 541, and the vertical magnetic rod 521 and the screw member 522 pass through the through hole 5411 to connect to the first tray 53. Four support rods 542 are evenly distributed on the support plate 541, and each support rod 542 is provided with an ejector pin 543, and the support rod 542 and the ejector pin 543 can pass through the ejector pin hole 531. The installation height of the ejector pin 543 at the top of the support rod 542 can be adjusted by the bolt on the adjustment hole 544. When the sample transfer rod 51 transfers the wafer 2111 to the second chamber 5, under the drive of the third driving member 545, the support plate 541 drives the ejector pin 543 to rise and fall through the ejector pin hole 531 to receive the wafer 2111 and place the wafer 2111 on the first tray 53. In this embodiment, the lifting mechanism 54 is connected to isolate the vacuum through a bellows and uses an electric cylinder to perform up and down linear motion.

[0067] like Figure 6 and Figure 8 As shown, the first tray 53 has slots 535 symmetrically arranged on the side. When the second tray 56 covers the first tray 53, the horizontal magnetic rod 571 drives the square pin 572 to move horizontally and be clamped in the slot 535. At this time, the first tray 53 and the second tray 56 are supported by the third magnetic rod assembly 57 and the fourth magnetic rod assembly 58, thereby driving the first tray 53 and the second tray 56 to rotate. The horizontal magnetic rod 571 and the square pin 572 can be rotated and retracted under the drive of the driving member. It can be understood that in this embodiment, the vertical magnetic rod 521, the horizontal magnetic rod 571 and the sample transmission rod 51 are all transmitted by magnetic coupling.

[0068] like Figure 8 As shown, a positioning ear 533 and four supporting ears 534 are provided at the inner edge of the first tray 53. The positioning ears 533 correspond to the notch 21111 of the wafer 2111, and are used to assist in positioning the wafer 2111 in the first tray 53. When the second tray 56 is covered with the first tray 53, the gap between the supporting ears 534 in the second tray 56 and the supporting ears 534 in the first tray 53 is equivalent to the thickness of the wafer 2111, so that the wafer 2111 can be flexibly turned over in the second tray 56 and the first tray 53, and the wafer is prevented from vibrating and breaking during the turning process.

[0069] The system for interconnecting MOCVD and MBE wafers in this embodiment does not need to contact the growth surface of the wafer during wafer transfer and flipping, reducing the risk of wafer surface damage and contact contamination; it does not need to clamp the peripheral area of ​​the wafer, reducing the risk of fragmentation caused by extrusion stress; the wafer is transferred from the MOCVD system to the MBE system alone, avoiding contamination by unnecessary materials such as graphite. It can realize clean, efficient and safe transfer of wafers between carriers of different specifications, realize two-way automatic sample transfer from MOCVD to MBE or MBE to MOCVD, truly realize MOCVD+MBE vacuum interconnection and process interconnection, give full play to the advantages of the two devices, significantly improve process performance and production efficiency, and provide possibilities for the development of special materials and new devices.

[0070] Example 2

[0071] like Fig.13 As shown, the method for interconnecting MOCVD and MBE wafers of the present invention is implemented based on the system for interconnecting MOCVD and MBE wafers in Example 1, and includes the following steps:

[0072] Step S1, the large graphite disk 21 is fixed in the MOCVD transition chamber 2, and the small graphite disk 211 is placed in the large graphite disk 21. In this embodiment, before the chambers are connected, the vacuum degree needs to be adjusted to be consistent, and then the transmission movement is performed. After the transmission is completed, each chamber needs to be evacuated to reach the required vacuum degree requirement.

[0073] Step S2 : The first robot arm 31 grabs the small graphite plate 211 carrying the wafer 2111 from the large graphite plate 21 , and transports it to the first chamber 4 .

[0074] Step S3, start the first driving member 421, the guide rod 424 drives the hook 425 to extend above the wafer 2111, the lifting platform 427 rises, the hook 425 hooks the notch 21111, the guide rod 424 drives the hook 425 to retract, and drives the wafer 2111 to be hooked up from the small graphite disk 211 at an angle of θ, the first sample transfer rod 51 passes between the wafer 2111 and the small graphite disk 211, and the first driving member 421 drives the guide rod 424 to drive the hook 425 to descend, so that the wafer 2111 falls on the first sample transfer rod 51; at this time, the front side of the wafer 2111 faces upward. It can be understood that the angle θ at which the wafer 2111 is hooked can be determined according to the size of the wafer and the thickness of the gripper of the sample transfer rod.

[0075] Step S4 : The first sample transfer rod 51 transfers the wafer 2111 to the second chamber 5 , and the magnetic rods of the first magnetic rod assembly 52 drive the first tray 53 to rise and stay under the first sample transfer rod 51 .

[0076] Step S5 , the lifting mechanism 54 rises, the ejector pin 543 passes through the first tray 53 to lift up the wafer 2111 on the first sample transfer rod 51 , and the first sample transfer rod 51 withdraws from the second chamber 5 .

[0077] Step S6, the lifting mechanism 54 drives the wafer 2111 to descend so as to fall onto the supporting ears 534 of the first tray 53; the magnetic rods of the second magnetic rod assembly 55 drive the second tray 56 to descend so that the surface of the second tray 56 contacts the surface of the first tray 53.

[0078] Step S7, the magnetic rods of the third magnetic rod assembly 57 and the magnetic rods of the fourth magnetic rod assembly 58 extend into the second chamber 5 from both sides respectively, and the square pins 572 extend into the slots 535 of the first tray 53 and the second tray 56, as shown in FIG. Figure 6 The magnetic rods of the first magnetic rod assembly 52 and the magnetic rods of the second magnetic rod assembly 55 are separated from the first tray 53 and the second tray 56 respectively, and exit the second chamber 5.

[0079] Step S8: The magnetic rods of the third magnetic rod assembly 57 and the magnetic rods of the fourth magnetic rod assembly 58 rotate 180° simultaneously to achieve 180° flipping of the wafers 2111 in the first tray 53 and the second tray 56. At this time, the front side of the wafer 2111 faces downward, that is, the wafer 2111 is flipped over individually.

[0080] Step S9, the magnetic rods of the first magnetic rod assembly 52 and the magnetic rods of the second magnetic rod assembly 55 enter the second chamber 5 again, and are connected to the first tray 53 and the second tray 56 respectively, and the magnetic rods of the third magnetic rod assembly 57 and the magnetic rods of the fourth magnetic rod assembly 58 exit the second chamber 5.

[0081] Step S10 , the magnetic rods of the second magnetic rod assembly 55 drive the second tray 56 to separate from the first tray 53 , the lifting mechanism 54 rises, and the ejector pins 543 pass through the first tray 53 to lift up the wafer 2111 .

[0082] Step S11 , the second sample transfer rod 59 enters the second chamber 5 and is located below the wafer 2111 , the lifting mechanism 54 descends, and the wafer 2111 falls onto the second sample transfer rod 59 .

[0083] Step S12, the second sample transfer rod 59 drives the wafer 2111 into the third chamber 6, the lifting mechanism in the third chamber 6 lifts the wafer 2111, the second sample transfer rod 59 withdraws from the third chamber 6, and the lifting mechanism in the third chamber 6 places the wafer 2111 on the large molybdenum tray 61.

[0084] Step S13, repeating steps S2 to S12, so as to transfer all the wafers 2111 in the large graphite plate 21 to the large molybdenum tray 61, as shown in FIG. Fig.12In this embodiment, eight 6-inch large molybdenum trays 61 are used, and other tray combinations (such as eight 6-inch trays, three 8-inch trays, four 6-inch trays, nine 4-inch trays, etc.) can also use this solution.

[0085] Step S14, the second robot 71 in the CDC chamber 7 moves to the third chamber 6 to grab the large molybdenum tray 61, and moves it to the MBE growth chamber 8 to complete the process.

[0086] In this implementation, individual wafer transfer is achieved to avoid unnecessary material contamination, clean, efficient and safe transfer of wafers between carriers of different specifications is realized, and two-way automatic sample transfer from MOCVD to MBE or MBE to MOCVD is completed, truly realizing MOCVD+MBE vacuum interconnection and process interconnection, giving full play to the advantages of the two devices, and significantly improving process performance and production efficiency.

[0087] The above is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above embodiments. All technical solutions under the concept of the present invention belong to the protection scope of the present invention. It should be pointed out that for ordinary technicians in this technical field, some improvements and modifications without departing from the principle of the present invention should also be regarded as the protection scope of the present invention.

Claims

1. A system for interconnecting MOCVD and MBE wafers, characterized in that: It comprises an MOCVD growth chamber (1), an MOCVD transition chamber (2), an MOCVD transfer chamber (3), a first chamber (4), a second chamber (5), a third chamber (6), a CDC chamber (7) and an MBE growth chamber (8) which are connected in sequence, and adjacent chambers are isolated by isolation valves (41); The MOCVD transition chamber (2) is provided with a large graphite disk (21), the large graphite disk (21) is provided with a small graphite disk (211), and the small graphite disk (211) is used to carry a wafer (2111); the MOCVD transfer chamber (3) is provided with a first robot (31), and the first robot (31) is used to realize the transfer of the small graphite disk (211) carrying the wafer (2111) between the MOCVD transition chamber (2) and the first chamber (4); The first chamber (4) is provided with a hook device (42) and a lifting platform (427), wherein the lifting platform (427) is used to carry the small graphite disk (211) and drive the small graphite disk (211) to rise and fall, and the hook device (42) is used to hook the wafer (2111) from the small graphite disk (211); the second chamber (5) is provided with a flipping device, wherein the flipping device comprises a tray assembly, a vertical lifting assembly and a horizontal flipping assembly, and the tray assembly is used to carry the small graphite disk (211) and drive the small graphite disk (211) to rise and fall. The invention relates to a wafer (2111) carrying a wafer, wherein the vertical lifting component is used to drive the tray component to lift and lower, and the horizontal flipping component is used to drive the tray component to flip, so as to realize the wafer (2111) turning over; a large molybdenum tray (61) for carrying the wafer (2111) is provided in the third chamber (6); a first sample transfer rod (51) is provided on the side of the second chamber (5); the first sample transfer rod (51) moves through the first chamber (4) and the second chamber (5) to realize the wafer (2111) transfer; a second sample transfer rod (59) is also provided on the side of the second chamber (5); the second sample transfer rod (59) moves through the second chamber (5) and the third chamber (6) to realize the wafer (2111) transfer; and a second robot (71) is provided in the CDC chamber (7); the second robot (71) is used to realize the transfer of the large molybdenum tray (61) carrying the wafer (2111) between the third chamber (6) and the MBE growth chamber (8).

2. The system for interconnecting MOCVD and MBE wafers according to claim 1, characterized in that: The hook device (42) comprises a first driving member (421), a guide rod (424) and a hook claw (425); the first driving member (421) is arranged outside the first chamber (4); one end of the guide rod (424) is connected to the output end of the first driving member (421); the other end of the guide rod (424) extends through the connection port (426) to the first chamber (4) in a sealed manner; and the end of the guide rod (424) is provided with a hook claw (425). ); driven by the first driving member (421), the guide rod (424) moves in the first chamber (4) and extends to above the wafer (2111), the lifting platform (427) rises, and the guide rod (424) retracts in the first chamber (4), driving the hook claw (425) to hook the notch (21111) on the wafer (2111) to hook up the wafer (2111), so as to facilitate the sample transfer rod (51) to take away the wafer (2111) separately.

3. The system for interconnecting MOCVD and MBE wafers according to claim 2, characterized in that: The hook device (42) further comprises a bellows (422) and a sealing assembly (423); the bellows (422) is sleeved on the outside of the guide rod (424); one end of the bellows (422) is sealedly connected to the end of the guide rod (424); and the other end of the bellows (422) is sealedly connected to the connection port (426) via the sealing assembly (423).

4. The system for interconnecting MOCVD and MBE wafers according to claim 2, characterized in that: The vertical lifting assembly comprises a first magnetic rod assembly (52) and a second magnetic rod assembly (55) having the same structure and symmetrically arranged in the second chamber (5), and a lifting mechanism (54) is arranged above the first magnetic rod assembly (52); the tray assembly comprises a first tray (53) and a second tray (56) having the same structure, the first magnetic rod assembly (52) and the first tray (53) are detachably connected, and the second magnetic rod assembly (55) and the second tray (56) are detachably connected; when the sample transfer rod (51) transfers the wafer (2111) to the second chamber (5), the first magnetic rod assembly (52) drives the first tray (53) to rise to below the sample transfer rod (51), the lifting mechanism (54) rises and falls to receive the wafer (2111), and places the wafer (2111) on the first tray (53), and the second magnetic rod assembly (55) drives the second tray (56) to descend and cover the first tray (53).

5. The system for interconnecting MOCVD and MBE wafers according to claim 4, characterized in that: The horizontal flip assembly comprises a third magnetic rod assembly (57) and a fourth magnetic rod assembly (58) having the same structure and symmetrically arranged in the second chamber (5); the third magnetic rod assembly (57) comprises a horizontal magnetic rod (571), a square pin (572) and a driving member; one end of the horizontal magnetic rod (571) is connected to the output shaft of the driving member, and the other end of the horizontal magnetic rod (571) is connected to the square pin (572); the square pin (572) is used to clamp the side of the first tray (53) and the second tray (56); under the drive of the driving member, the horizontal magnetic rod (571) drives the first tray (53) and the second tray (56) to rotate 180° through the square pin (572) to realize the flipping of the wafer (2111).

6. The system for interconnecting MOCVD and MBE wafers according to claim 5, characterized in that: The first magnetic rod assembly (52) comprises a vertical magnetic rod (521), a screw member (522) and a second driving member (523); one end of the vertical magnetic rod (521) is connected to the output shaft of the second driving member (523); the other end of the vertical magnetic rod (521) is connected to the screw member (522); a screw hole (532) matching the screw member (522) is provided at the center of the first tray (53); under the drive of the second driving member (523), the vertical magnetic rod (521) drives the screw member (522) to rotate in or out of the screw hole (532), and drives the first tray (53) to rise and fall.

7. The system for interconnecting MOCVD and MBE wafers according to claim 6, characterized in that: The first tray (53) is evenly distributed with a plurality of ejector holes (531); the lifting mechanism (54) comprises a support plate (541), a support rod (542), an ejector (543) and a third driving member (545); a through hole (5411) is provided in the middle of the support plate (541), and the vertical magnetic rod (521) and the screw member (522) pass through the through hole (5411) to be connected to the first tray (53); the support plate (541) is evenly distributed with a plurality of support rods (542), and the third driving member (545) is provided with a plurality of ejector holes (531) to be connected to the first tray (53); the lifting mechanism (54) comprises a support plate (541), a support rod (542), an ejector (543) and a third driving member (545); a through hole (5411) is provided in the middle of the support plate (541), and the vertical magnetic rod (521) and the screw member (522) pass through the through hole (5411) to be connected to the first tray (53); 2), a pin (543) is provided on the support rod (542), and both the support rod (542) and the pin (543) can pass through the pin hole (531); when the sample transfer rod (51) transfers the wafer (2111) to the second chamber (5), the support plate (541) drives the pin (543) to rise and fall through the pin hole (531) under the drive of the third driving member (545) to receive the wafer (2111), and the wafer (2111) is placed on the first tray (53).

8. The system for interconnecting MOCVD and MBE wafers according to claim 7, characterized in that: The first tray (53) is symmetrically provided with slots (535) on its side. When the second tray (56) is covered with the first tray (53), the horizontal magnetic rod (571) drives the square pin (572) to move horizontally and be clamped in the slot (535).

9. The system for interconnecting MOCVD and MBE wafers according to claim 8, characterized in that: The inner edge of the first tray (53) is provided with a supporting ear (534) and a plurality of positioning ears (533); the positioning ears (533) are used to assist in positioning the wafer (2111) in the first tray (53); when the second tray (56) is covered with the first tray (53), the gap between the supporting ears (534) in the second tray (56) and the supporting ears (534) in the first tray (53) is equivalent to the thickness of the wafer (2111), so as to realize flexible flipping of the wafer (2111) in the second tray (56) and the first tray (53).

10. A method for interconnecting MOCVD and MBE wafers, characterized in that: The following steps are involved: Step S1, a large graphite disk (21) is fixed in an MOCVD transition chamber (2), and a small graphite disk (211) is placed in the large graphite disk (21); Step S2, the first robot (31) grabs the small graphite disk (211) carrying the wafer (2111) from the large graphite disk (21), and moves it to the first chamber (4); Step S3, start the first driving member (421), the guide rod (424) drives the hook (425) to extend above the wafer (2111), the lifting platform (427) rises, the hook (425) hooks the notch (21111), the guide rod (424) drives the hook (425) to retract, and drives the wafer (2111) to be hooked up from the small graphite disk (211) at an angle of θ, the first sample transfer rod (51) passes between the wafer (2111) and the small graphite disk (211), the first driving member (421) drives the guide rod (424) to drive the hook (425) to descend, so that the wafer (2111) falls onto the first sample transfer rod (51); at this time, the front side of the wafer (2111) faces upward; Step S4: the first sample transfer rod (51) transfers the wafer (2111) to the second chamber (5), and the magnetic rod of the first magnetic rod assembly (52) drives the first tray (53) to rise and stay under the first sample transfer rod (51); Step S5, the lifting mechanism (54) rises, the ejector pin (543) passes through the first tray (53) to lift the wafer (2111) on the first sample transfer rod (51), and the first sample transfer rod (51) exits the second chamber (5); Step S6, the lifting mechanism (54) drives the wafer (2111) to descend so as to fall into the first tray (53); the magnetic rod of the second magnetic rod assembly (55) drives the second tray (56) to descend so that the surface of the second tray (56) contacts the surface of the first tray (53); Step S7, the magnetic rods of the third magnetic rod assembly (57) and the magnetic rods of the fourth magnetic rod assembly (58) extend from both sides of the second chamber (5), and the square pins (572) extend into the slots (535) of the first tray (53) and the second tray (56); the magnetic rods of the first magnetic rod assembly (52) and the magnetic rods of the second magnetic rod assembly (55) are separated from the first tray (53) and the second tray (56) respectively, and exit the second chamber (5); Step S8, the magnetic rods of the third magnetic rod assembly (57) and the magnetic rods of the fourth magnetic rod assembly (58) are simultaneously rotated 180° to achieve a 180° flipping of the wafers (2111) in the first tray (53) and the second tray (56), at which time the front side of the wafers (2111) faces downward; Step S9, the magnetic rods of the first magnetic rod assembly (52) and the magnetic rods of the second magnetic rod assembly (55) enter the second chamber (5) again, and are connected to the first tray (53) and the second tray (56) respectively, and the magnetic rods of the third magnetic rod assembly (57) and the magnetic rods of the fourth magnetic rod assembly (58) exit the second chamber (5); Step S10, the magnetic rod of the second magnetic rod assembly (55) drives the second tray (56) to separate from the first tray (53), the lifting mechanism (54) rises, and the ejector pin (543) passes through the first tray (53) to lift the wafer (2111); Step S11, the second sample transfer rod (59) enters the second chamber (5) and is located below the wafer (2111), the lifting mechanism (54) descends, and the wafer (2111) falls onto the second sample transfer rod (59); Step S12: the second sample transfer rod (59) drives the wafer (2111) into the third chamber (6); the lifting mechanism in the third chamber (6) lifts the wafer (2111); the second sample transfer rod (59) exits the third chamber (6); and the lifting mechanism in the third chamber (6) places the wafer (2111) on the large molybdenum tray (61); Step S13, repeating steps S2 to S12, so as to achieve the transfer of all wafers (2111) in the large graphite plate (21) to the large molybdenum tray (61); Step S14, the second robot (71) in the CDC chamber (7) moves to the third chamber (6) to grab the large molybdenum tray (61), and moves to the MBE growth chamber (8) to complete the process.

Images