Gallium oxide crystal microdefect and doping regulation and control system and method

Abstract

The invention discloses a gallium oxide crystal microdefect and doping regulation and control system and method, and belongs to the technical field of gallium oxide crystal regulation and control, and the method specifically comprises the following steps: growing a gallium oxide crystal under a specific temperature condition by using a chemical vapor deposition or molecular beam epitaxy method to obtain the gallium oxide crystal, the method comprises the following steps: carrying out mathematical modeling on micro defects of the gallium oxide crystal, analyzing and regulating the micro defects in the gallium oxide crystal, analyzing the doping concentration and distribution in the gallium oxide crystal, regulating the doping in the gallium oxide crystal, and verifying the performance optimization of the regulated gallium oxide crystal. The microdefects such as dislocation and vacancy in the gallium oxide crystal are effectively reduced, accurate regulation and control of the microdefects and electrical properties of the gallium oxide crystal are realized, and the quality and performance based on gallium oxide can be remarkably improved.

Description

Technical Field

[0001] The invention belongs to the technical field of gallium oxide crystal regulation and control, and in particular to a system and method for regulating and controlling microscopic defects and doping of gallium oxide crystals. Background Art

[0002] Gallium oxide (Ga2O3) is a semiconductor material with a wide bandgap (about 4.8-4.9eV) that has attracted much attention for its potential applications in high-power, high-frequency devices. However, various microscopic defects such as dislocations, vacancies, and clusters are easily formed during the growth of gallium oxide crystals, which can significantly affect the electrical and optical properties of the material. In addition, common intrinsic defects in gallium oxide crystals such as oxygen vacancies (V_O) and gallium vacancies (V_Ga) can lead to changes in conductivity and fluctuations in carrier concentration. In order to improve the performance of gallium oxide crystals, doping is usually used to regulate their microscopic defect structure. However, traditional doping methods may introduce new defects or fail to effectively control the concentration and distribution of existing defects.

[0003] Gallium oxide crystals are usually grown using melt growth methods (such as the Bridgman method and the floating zone method) or vapor phase growth methods (such as chemical vapor deposition CVD and molecular beam epitaxy MBE). However, due to the high anisotropy and complex lattice structure of gallium oxide crystals, various microscopic defects are easily formed during the growth process. These defects include but are not limited to: dislocations, vacancies and clusters.

[0004] There is a complex interaction between microscopic defects and dopants in gallium oxide crystals. Certain doping elements may stabilize specific types of defects, while others may promote the generation of defects. For example, oxygen vacancies act as the main source of n-type conductivity in gallium oxide crystals, but they may also form composite defects with certain dopants (such as gallium), changing the conductivity type of the material.

[0005] Therefore, a precise method for controlling microscopic defects and doping is needed. Summary of the invention

[0006] In view of the shortcomings of the prior art, the present invention proposes a system and method for regulating microscopic defects and doping of gallium oxide crystals. By adjusting the thermodynamic conditions and chemical vapor environment during the crystal growth process, precise control of microscopic defects is achieved. At the same time, dynamic doping technology is used to optimize the spatial distribution of doping atoms and improve the electrical properties and stability of the crystal.

[0007] To achieve the above object, the present invention provides the following technical solutions: Gallium oxide crystal micro defects and doping control methods, including: Growing gallium oxide crystals under specific temperature conditions using chemical vapor deposition or molecular beam epitaxy to obtain gallium oxide crystals; Mathematically model the microscopic defects of gallium oxide crystals, analyze the microscopic defects in gallium oxide crystals, and regulate them; Analyze the doping concentration and distribution in gallium oxide crystals, and regulate the doping in gallium oxide crystals; The optimization of the performance of the regulated gallium oxide crystals was verified.

[0008] Specifically, the mathematical modeling of the microscopic defects of the gallium oxide crystal, the analysis of the microscopic defects in the gallium oxide crystal, and the regulation include: Calculate the defect density of gallium oxide crystals using the following formula: , Among them, N d (T, P, F) represents the defect density of the gallium oxide crystal, T represents the growth temperature of the gallium oxide crystal, P represents the growth pressure of the gallium oxide crystal, V g represents the gas flow rate during the growth of gallium oxide crystals, E a represents the activation energy, k B represents the Boltzmann constant, k and represents the proportional constant, exp() represents the exponential function; A kinetic model of micro-defect formation is established to describe the diffusion behavior of dopants in the crystal. The specific formula is: , Where C(o,t) represents the dopant concentration at point o at time t, and the coordinates of point o are (x o ,y o ,z o ), D represents the diffusion coefficient of the dopant in the gallium oxide crystal, o represents the position o in the gallium oxide crystal, t represents the time, Indicates the symbol for partial derivative; The grown gallium oxide crystals are annealed to reduce oxygen vacancies and grain boundary defects in the crystals by controlling the annealing temperature, time and gas flow rate. The specific formula for feedback control of the defect generation rate is: , Among them, R d Denotes the feedback control of defect generation rate, △T, △P and △V g Represents small adjustments in temperature, pressure and gas flow rate respectively.

[0009] Specifically, the method of mathematically modeling the microscopic defects of the gallium oxide crystal, analyzing the microscopic defects in the gallium oxide crystal, and regulating the microscopic defects also includes: Calculate the defect density after repair. The specific formula is: , Among them, N f represents the defect density of the gallium oxide crystal after repair, Q a represents the activation energy during annealing, t a represents the annealing time, T a Indicates annealing temperature.

[0010] Specifically, the analysis of the doping concentration and distribution in the gallium oxide crystal and the regulation of the doping in the gallium oxide crystal include: n-type doping and p-type doping are used to introduce electrons and holes respectively; Dynamically control the doping in gallium oxide crystals. The specific formula is: , in, represents the doping concentration in the gallium oxide crystal, C0 represents the peak doping concentration, (x0, y0, z0) represents the doping center position, Represents the doping distribution width parameter.

[0011] Specifically, the verification of the optimization of the performance of the regulated gallium oxide crystal includes: The electrical properties of the regulated gallium oxide crystals are evaluated through resistivity tests and Hall effect tests to ensure that they meet the requirements of the target application. The specific formula for evaluating the electrical properties of the doped gallium oxide crystals is: , in, represents the conductivity of the regulated gallium oxide crystal, q represents the electron charge, and n d represents the carrier concentration, represents the carrier mobility; High-resolution transmission electron microscopy and X-ray diffraction were used to characterize the crystal structure and the distribution of microscopic defects.

[0012] Specifically, the specific temperature includes: a temperature range of 850K ~ 1050K.

[0013] A gallium oxide crystal micro defect and doping control system, used to implement the gallium oxide crystal micro defect and doping control method, comprising: a gallium oxide generation module, a defect control module, a doping control module and an optimization verification module; The gallium oxide production module is used to grow gallium oxide crystals under specific temperature conditions by using chemical vapor deposition or molecular beam epitaxy to obtain gallium oxide crystals; The defect control module is used to mathematically model the microscopic defects of the gallium oxide crystal, analyze the microscopic defects in the gallium oxide crystal, and control them; The doping control module is used to analyze the doping concentration and distribution in the gallium oxide crystal, and to control the doping in the gallium oxide crystal; The optimization verification module is used to verify the optimization of the performance of the regulated gallium oxide crystal.

[0014] Specifically, the defect control module includes: a defect calculation unit, a defect analysis unit and a defect processing unit; The defect calculation unit is used to calculate the defect density of the gallium oxide crystal; The defect analysis unit is used to establish a kinetic model for the formation of microscopic defects and analyze the diffusion behavior of dopants in the crystal; The defect treatment unit is used to perform annealing treatment on the grown gallium oxide crystal, reduce oxygen vacancies and grain boundary defects in the crystal by controlling the annealing temperature, time and gas flow rate, and perform feedback control on the defect generation rate.

[0015] An electronic device comprises a memory and a processor, wherein the memory stores a computer program, and the processor implements the steps of a method for regulating microscopic defects and doping of gallium oxide crystals when executing the computer program.

[0016] A computer-readable storage medium stores computer instructions, which, when executed, execute the steps of a method for controlling microscopic defects and doping of gallium oxide crystals.

[0017] Compared with the prior art, the present invention has the following beneficial effects: 1. The present invention proposes a method for controlling microscopic defects and doping of gallium oxide crystals. Through growth control and subsequent processing technology, microscopic defects such as dislocations and vacancies in gallium oxide crystals are effectively reduced, and precise control of microscopic defects and electrical properties of gallium oxide crystals is achieved.

[0018] 2. The present invention proposes a method for controlling microscopic defects and doping of gallium oxide crystals. By optimizing the doping process, a uniform distribution of doping elements can be achieved while suppressing the formation of undesirable defects, thereby improving the doping efficiency and long-term stability of gallium oxide crystals.

[0019] 3. The present invention proposes a method for controlling microscopic defects and doping of gallium oxide crystals, which can significantly improve the quality and performance of gallium oxide-based products, such as higher switching frequency, lower power consumption and longer service life. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 A flow chart of the gallium oxide crystal micro-defect and doping control method provided by the present invention; Figure 2 This is a schematic diagram of the gallium oxide crystal micro-defect and doping control system architecture provided by the present invention; Figure 3A schematic diagram of an electronic device provided by the present invention; Figure 4 A schematic diagram of the computer-readable storage medium structure provided by the present invention. DETAILED DESCRIPTION

[0021] In order to make the technical means, creative features, objectives and effects achieved by the present invention easy to understand, in the description of the present invention, it should be noted that the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside" and the like indicate the orientation or position relationship based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing the present invention and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, the terms "No. 1", "No. 2" and "No. 3" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance. The present invention is further explained below in conjunction with specific embodiments.

[0022] Example 1 See also Figure 1 , an embodiment provided by the present invention: a method for regulating microscopic defects and doping of gallium oxide crystals, comprising the following specific steps: Step S1: growing gallium oxide crystals under high temperature conditions using a chemical vapor deposition (CVD) or molecular beam epitaxy (MBE) method to obtain high-quality gallium oxide crystals; The growth temperature T is controlled within 850K≤T≤1050K to ensure the integrity of the crystal. The oxygen defect concentration of the crystal is controlled by adjusting the oxygen partial pressure pO2 in the atmosphere. The control range of the oxygen partial pressure pO2 is 10 −6 Pa≤pO2≤10 −3 Pa; The chemical vapor deposition (CVD) or molecular beam epitaxy (MBE) method, the CVD method is a process of generating solid materials through chemical reactions in a gas phase environment. This method generates the required materials by decomposing gaseous precursors at high temperatures and depositing them on a substrate, thereby forming a high-quality thin film; the MBE method is a technology that deposits on the surface of a substrate by directly spraying molecular or atomic beams in an ultra-high vacuum environment. This method can accurately control the deposition rate and thickness, so that the epitaxial layer has a higher crystalline quality; In this embodiment, the growth temperature has a direct impact on the quality of the crystal. Too high a temperature will lead to lattice mismatch and increased defects, while too low a temperature may lead to incomplete crystallization. By controlling the temperature within the range of 850K≤T≤1050K, it is possible to ensure that the crystal grows under optimal conditions and reduce the formation of lattice defects, thereby ensuring the integrity and uniformity of the crystal. Oxygen defects are one of the main factors affecting the electrical properties of gallium oxide crystals. By controlling the oxygen partial pressure pO2, the oxygen defect concentration in the crystal can be accurately adjusted. Low oxygen partial pressure will lead to an increase in oxygen defects, resulting in n-type conductivity, while high oxygen partial pressure will reduce oxygen defects, which may enhance the p-type conductivity of the crystal. By controlling pO2 within 10 −6 Pa≤pO2≤10 −3 Within the range of Pa, the conductivity type and electrical properties of gallium oxide can be optimized to a certain extent; Step S2: mathematically modeling the microscopic defects of the gallium oxide crystal, analyzing the microscopic defects in the gallium oxide crystal, and performing regulation; The specific steps of step S2 are: Step S201: Calculate the defect density of the gallium oxide crystal using the following formula: , Among them, N d (T, P, F) represents the defect density of gallium oxide crystals. T represents the growth temperature of gallium oxide crystals, that is, the temperature at which gallium oxide crystals are formed during chemical vapor deposition (CVD). Changes in temperature will affect the nucleation and growth rate of the crystals, and further affect the generation of microscopic defects. High temperatures usually help reduce the formation of certain defects, but may also cause other types of defects. P represents the growth pressure of gallium oxide crystals, that is, the gas pressure in the reaction chamber during crystal growth. Changes in pressure will affect the fluidity of the gas and the concentration of reactants, thereby affecting the nucleation of the crystals and the formation of defects. V g Indicates the gas flow rate during the growth of gallium oxide crystals, that is, the flow rate of the reaction gas (such as oxygen, hydrogen, etc.) during the crystal growth process, which affects the uniformity of gas supply and the growth rate of the crystal. a k represents the activation energy, which is the minimum energy required for the formation of microscopic defects. The size of the activation energy determines the difficulty of defect generation under specific conditions. A higher activation energy means that defects are more difficult to form. B represents the Boltzmann constant, k and It represents the proportional constant, which is a constant obtained by fitting data in the experiment and is used to adjust the formula to make it consistent with experimental observations. exp() represents the exponential function. The defect density of gallium oxide crystals refers to the number of microscopic defects in a unit volume of gallium oxide crystals under specific conditions (temperature, pressure, gas flow). Microscopic defects include dislocations, vacancies, impurity atoms, etc. These defects will affect the electrical properties of the crystals. The principle of the above formula: Based on the principles of thermodynamics and chemical reaction kinetics, it is used to describe the formation process of microscopic defects in gallium oxide crystals. According to the formula, the defect density N d (T,P,V g ) decreases with the increase of growth temperature T, because higher temperature helps atoms to arrange more orderly, thus reducing the formation of defects. At the same time, higher pressure P and lower gas flow rate V g This will lead to a higher defect density, which indicates that under high pressure and low flow conditions, the reactants may be more likely to deposit on the crystal surface to form defects. This formula combines multiple key parameters in the chemical vapor deposition process to describe the formation mechanism and density distribution of microscopic defects. By adjusting these parameters, the growth conditions of the crystal can be optimized, the defect density can be reduced, and the quality and electrical properties of the gallium oxide crystal can be improved. Step S202: Establish a dynamic model for the formation of microscopic defects and analyze the diffusion behavior of dopants in the crystal. The specific formula is: , Where C(o,t) represents the dopant concentration at point o at time t, and the coordinates of point o are (x o ,y o ,z o ), which is used to describe the distribution of dopants in gallium oxide crystals as a function of time and position, D represents the diffusion coefficient of dopants in gallium oxide crystals, o represents the o position point in the gallium oxide crystal, t represents time, Indicates the symbol for partial derivative; The kinetic model formula principle of micro defect formation: This formula indicates that the rate of change of dopant concentration (time derivative on the left) is equal to the diffusion coefficient multiplied by the spatial second derivative of concentration (right side), which indicates that the diffusion of dopants in the crystal is driven by the concentration gradient. The diffusion coefficient D reflects the ability of dopants to diffuse in the crystal. A larger D value indicates that the dopant diffuses more easily. The higher the temperature, the larger D is, because the thermal motion of the dopant is more intense, the diffusion is faster, and the gradient concentration is Indicates the non-uniformity of dopant distribution in space, driving dopant diffusion from high-concentration areas to low-concentration areas. This model is used to predict the diffusion behavior of dopants during the growth of gallium oxide crystals, thereby optimizing the doping concentration distribution, reducing microscopic defects, and improving the electrical properties of the crystals. Step S203: Annealing the grown gallium oxide crystals, and reducing oxygen vacancies and grain boundary defects in the crystals by controlling the annealing temperature, time and gas flow rate. The specific formula for feedback control of the defect generation rate is: , Among them, R d Denotes the feedback control of defect generation rate, △T, △P and △V g Respectively represent small adjustments of temperature, pressure and gas flow rate; Step S204: Calculate the defect density after repair, the specific formula is: , Among them, N f represents the defect density of the gallium oxide crystal after repair, Q a It represents the activation energy during the annealing process. The activation energy is usually related to the migration and rearrangement of atoms or ions in the crystal. The higher the activation energy, the slower the defect repair speed. Therefore, the repair efficiency is proportional to the temperature and time. a represents the annealing time, T a Represents the annealing temperature. The higher the temperature, the greater the kinetic energy obtained by the atoms or ions in the crystal, making the efficiency of defect repair higher, which will cause the defect density to decrease at a faster rate.

[0023] Defect repair formula principle: Based on the principles of thermodynamics and kinetics, it describes the exponential decrease of defect density with time and temperature during the annealing process. When the annealing temperature increases, the term becomes smaller, resulting in becomes larger, so that N f This indicates that high temperature annealing is more effective in reducing the defect density and the activation energy Q a It reflects the difficulty of defect repair. For defect types with high activation energy, a sufficiently high temperature and a sufficiently long time must be provided to significantly reduce these defects.

[0024] Step S3: analyzing the doping concentration and distribution in the gallium oxide crystal, and regulating the doping in the gallium oxide crystal; The specific steps of step S3 are: Step S301: using n-type doping and p-type doping to introduce electrons and holes respectively; N-type dopant: Select elements with lower ionization energy, such as tin (Sn) or silicon (Si), which can effectively release free electrons in the gallium oxide crystal and increase the electron concentration n; P-type dopant: Select elements suitable for compensating electron concentration and increasing hole concentration, such as magnesium (Mg) or zinc (Zn). The incorporation of these elements can form acceptor energy levels and increase the hole concentration p; Step S302: Dynamically control the doping in the gallium oxide crystal. The specific formula is: , in, It represents the doping concentration in the gallium oxide crystal, that is, the concentration of doping atoms at a specific position (x, y, z) in the crystal. The doping concentration describes the spatial distribution of the doping element in the crystal and is an important factor affecting the electrical properties of the material. C0 represents the peak doping concentration, which represents the maximum concentration of the doping element at a certain position in the crystal. This parameter is usually related to the supply of the doping source and the doping conditions (such as temperature, air pressure, etc.). It is an important parameter that determines the doping effect in the crystal. (x0, y0, z0) represents the doping center position, which is usually determined by the configuration of the doping device and the process conditions. It represents the doping distribution width parameter, that is, the expansion range of the doping atoms in space. The larger the value, the wider the doping concentration distribution, and vice versa, it is concentrated in a small area. This parameter is related to the diffusion mechanism during crystal growth and the expansion characteristics of the doping source. In this example, the dynamic control formula is based on the Gaussian distribution model (or normal distribution), which describes the spatial distribution characteristics of doping atoms in the crystal. The characteristic of Gaussian distribution is that the doping concentration reaches the maximum value at the center and then gradually decreases with increasing distance. The parameters in the formula are Controls the extension range of the concentration distribution, while parameter C0 controls the peak value of the concentration; The doping center position (x0, y0, z0) is usually determined by the physical structure of the actual doping device and the doping conditions, while the distribution width It is related to factors such as the diffusion rate and the temperature gradient of crystal growth. By adjusting these parameters, the distribution of doping atoms in the crystal can be precisely controlled, thereby achieving the regulation of material properties. By reasonably selecting the position of the doping source (x0, y0, z0) and adjusting the distribution width , can achieve precise doping of specific areas within the crystal, improve the electrical properties, conductivity, optical properties of the material, etc. For example, in semiconductor devices, by controlling the doping concentration distribution, key structures such as pn junction and Schottky junction can be formed; This formula describes the spatial distribution of doping atoms within the crystal and optimizes material properties through parameter control. This method is different from the traditional uniform doping method and provides a more precise doping control method.

[0025] Step S4: verifying the optimization of the performance of the regulated gallium oxide crystal.

[0026] The specific steps of step S4 are: Step S401: Evaluate the electrical properties of the regulated gallium oxide crystal through resistivity test and Hall effect test to ensure that it meets the requirements of the target application. The specific formula for evaluating the electrical properties of the doped gallium oxide crystal is: , in, It indicates the conductivity of the regulated gallium oxide crystal. The conductivity indicates the strength of the gallium oxide crystal's ability to conduct electricity under the action of an electric field. The unit is Siemens per meter (S / m). The higher the conductivity, the better the conductivity of the gallium oxide crystal. It is an important electrical parameter of the gallium oxide crystal and directly affects the performance of the gallium oxide crystal in electronic devices. q indicates the electron charge, and n d Indicates carrier concentration. In semiconductor materials, carriers can be electrons or holes. The higher the carrier concentration, the better the conductivity of the gallium oxide crystal. By doping, the carrier concentration of the semiconductor can be controlled, thereby adjusting its conductivity. Indicates carrier mobility, a parameter that describes the speed at which carriers move under the action of an electric field. Its unit is square meter per volt second (m² / V·s). It reflects the ease with which carriers move in gallium oxide crystals. The higher the mobility, the faster the carriers move under an electric field, thereby improving the conductivity of the material. The mobility is affected by factors such as the crystal structure, impurity concentration, and temperature of the gallium oxide crystal. In this embodiment, the formula reflects the relationship between conductivity and carrier concentration and mobility in the material. It is a basic formula in solid physics and semiconductor physics. It shows that the conductivity of the material is determined by the number of carriers (carrier concentration) and the mobility of the carriers under the action of the electric field (mobility); Carrier concentration n d Function: In semiconductors, the carrier concentration n d It is determined by the inherent properties and doping conditions of gallium oxide crystals. By introducing doping atoms, the number of free electrons or holes can be increased, thereby improving the conductivity of gallium oxide crystals. Under a given carrier mobility, the higher the carrier concentration, the higher the conductivity of the gallium oxide crystal; carrier mobility Function: Mobility Describes the rate at which carriers move in an electric field. High mobility means that carriers can respond to the electric field faster, thereby enhancing the conductivity of the gallium oxide crystal. Mobility is affected by factors such as the lattice structure, defects, impurities, and temperature of the gallium oxide crystal. Overall relationship: conductivity is the carrier concentration n d and carrier mobility The product of , multiplied by a constant q (electron charge), shows that the conductivity of a material can be improved by increasing the number of carriers or increasing the carrier mobility. This formula is crucial in the design and optimization of semiconductor materials and devices. For example, when choosing the doping concentration and type, it is necessary to balance the carrier concentration and mobility to achieve the best conductivity; Step S402: using high resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) to characterize the crystal structure and the distribution of microscopic defects.

[0027] Example 2 See also Figure 2 , another embodiment provided by the present invention: a gallium oxide crystal micro defect and doping control system, comprising: a gallium oxide generation module, a defect control module, a doping control module and an optimization verification module; The gallium oxide production module is used to grow gallium oxide crystals under specific temperature conditions by using chemical vapor deposition or molecular beam epitaxy to obtain gallium oxide crystals; The defect control module is used to mathematically model the microscopic defects of the gallium oxide crystal, analyze the microscopic defects in the gallium oxide crystal, and control them; The doping control module is used to analyze the doping concentration and distribution in the gallium oxide crystal, and to control the doping in the gallium oxide crystal; The optimization verification module is used to verify the optimization of the performance of the regulated gallium oxide crystal.

[0028] The defect control module includes: a defect calculation unit, a defect analysis unit and a defect processing unit; The defect calculation unit is used to calculate the defect density of the gallium oxide crystal; The defect analysis unit is used to establish a kinetic model for the formation of microscopic defects and analyze the diffusion behavior of dopants in the crystal; The defect treatment unit is used to perform annealing treatment on the grown gallium oxide crystal, reduce oxygen vacancies and grain boundary defects in the crystal by controlling the annealing temperature, time and gas flow rate, and perform feedback control on the defect generation rate.

[0029] Example 3 Figure 3 1 is a schematic diagram of the structure of an electronic device provided by an embodiment of the present application. Figure 3 As shown, according to another aspect of the present application, an electronic device 500 is also provided. The electronic device 500 may include one or more processors and one or more memories. The memories store computer readable codes, and when the computer readable codes are run by one or more processors, the method for controlling microscopic defects and doping of gallium oxide crystals can be executed.

[0030] The method or system according to the embodiment of the present application can also be used by Figure 3 The electronic device architecture shown in FIG. Figure 3 As shown, the electronic device 500 may include a bus 501, one or more CPUs 502, a ROM 503, a RAM 504, a communication port 505 connected to a network, an input / output component 506, a hard disk 507, and the like. The storage device in the electronic device 500, such as the ROM 503 or the hard disk 507, may store the microscopic defects of the gallium oxide crystals and the doping control method provided in the present application. The microscopic defects of the gallium oxide crystals and the doping control method may, for example, include: growing gallium oxide crystals under specific temperature conditions using chemical vapor deposition or molecular beam epitaxy to obtain gallium oxide crystals, mathematically modeling the microscopic defects of the gallium oxide crystals, analyzing the microscopic defects in the gallium oxide crystals and controlling them, analyzing the doping concentration and distribution in the gallium oxide crystals, controlling the doping in the gallium oxide crystals, and verifying the optimization of the performance of the gallium oxide crystals after control. Furthermore, the electronic device 500 may also include a user interface 508. Of course, Figure 3 The architecture shown is only exemplary and can be omitted according to actual needs when implementing different devices. Figure 3 One or more components of an electronic device are shown.

[0031] Example 4 Figure 4 Schematic diagram of a computer-readable storage medium structure provided by an embodiment of the present application. Figure 4 As shown, a computer-readable storage medium 600 according to an embodiment of the present application is shown. Computer-readable instructions are stored on the computer-readable storage medium 600. When the computer-readable instructions are executed by the processor, the microscopic defects and doping control method of gallium oxide crystals according to the embodiment of the present application described with reference to the above figures can be executed. The storage medium 600 includes, but is not limited to, for example, volatile memory and / or non-volatile memory. Volatile memory may include, for example, random access memory (RAM) and cache memory (cache). Non-volatile memory may include, for example, read-only memory (ROM), hard disk, flash memory, etc.

[0032] It should be understood that the methods, apparatuses, and devices of the present application can be implemented in many ways. For example, the methods, apparatuses, and devices of the present application can be implemented by software, hardware, firmware, or any combination of software, hardware, and firmware. The above order of steps for the method is only for illustration, and the steps of the method of the present application are not limited to the order specifically described above unless otherwise specified. In addition, in some embodiments, the present application can also be implemented as a program recorded in a recording medium, which includes machine-readable instructions for implementing the method according to the present application. Therefore, the present application also covers a recording medium storing a program for executing the method according to the present application.

[0033] In addition, the parts of the above-mentioned technical solutions provided in the embodiments of the present application that are consistent with the implementation principles of the corresponding technical solutions in the prior art are not described in detail to avoid excessive redundancy.

[0034] The specific implementation modes as described above further describe the purpose, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above description is only a specific implementation mode of the present invention and is not intended to limit the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A method for controlling microscopic defects and doping of gallium oxide crystals, characterized in that: include: Growing gallium oxide crystals under specific temperature conditions using chemical vapor deposition or molecular beam epitaxy to obtain gallium oxide crystals; Mathematically model the microscopic defects of gallium oxide crystals, analyze the microscopic defects in gallium oxide crystals, and regulate them; Analyze the doping concentration and distribution in gallium oxide crystals, and regulate the doping in gallium oxide crystals; The optimization of the performance of the regulated gallium oxide crystals was verified.

2. The gallium oxide crystal micro defect and doping control method according to claim 1, characterized in that: The method of mathematically modeling the microscopic defects of the gallium oxide crystal, analyzing the microscopic defects in the gallium oxide crystal, and regulating the microscopic defects includes: Calculate the defect density of gallium oxide crystals using the following formula: ， Among them, N d (T, P, F) represents the defect density of the gallium oxide crystal, T represents the growth temperature of the gallium oxide crystal, P represents the growth pressure of the gallium oxide crystal, V g represents the gas flow rate during the growth of gallium oxide crystals, E a represents the activation energy, k B represents the Boltzmann constant, k and represents the proportional constant, exp() represents the exponential function; A kinetic model for the formation of microscopic defects is established to analyze the diffusion behavior of dopants in the crystal. The specific formula is: ， Where C(o,t) represents the dopant concentration at point o at time t, and the coordinates of point o are (x o ,y o ,z o ), D represents the diffusion coefficient of the dopant in the gallium oxide crystal, o represents the o position in the gallium oxide crystal, t represents the time, Indicates the symbol for partial derivative; The grown gallium oxide crystals are annealed to reduce oxygen vacancies and grain boundary defects in the crystals by controlling the annealing temperature, time and gas flow rate. The specific formula for feedback control of the defect generation rate is: ， Among them, R d Denotes the feedback control of defect generation rate, △T, △P and △V g Represents small adjustments in temperature, pressure and gas flow rate respectively.

3. The gallium oxide crystal micro defect and doping control method according to claim 2, characterized in that: The method of mathematically modeling the microscopic defects of the gallium oxide crystal, analyzing the microscopic defects in the gallium oxide crystal, and regulating the microscopic defects also includes: Calculate the defect density after repair. The specific formula is: ， Among them, N f represents the defect density of the gallium oxide crystal after repair, Q a represents the activation energy during annealing, t a represents the annealing time, T a Indicates annealing temperature.

4. The gallium oxide crystal micro defect and doping control method according to claim 3, characterized in that: The analyzing the doping concentration and distribution in the gallium oxide crystal and regulating the doping in the gallium oxide crystal include: n-type doping and p-type doping are used to introduce electrons and holes respectively; Dynamically control the doping in gallium oxide crystals. The specific formula is: ， in, represents the doping concentration in the gallium oxide crystal, C0 represents the peak doping concentration, (x0, y0, z0) represents the doping center position, Represents the doping distribution width parameter.

5. The gallium oxide crystal micro defect and doping control method according to claim 4, characterized in that: The verification of the optimization of the performance of the regulated gallium oxide crystal includes: The electrical properties of the regulated gallium oxide crystals are evaluated through resistivity tests and Hall effect tests to ensure that they meet the requirements of the target application. The specific formula for evaluating the electrical properties of the doped gallium oxide crystals is: ， in, represents the conductivity of the regulated gallium oxide crystal, q represents the electron charge, and n d represents the carrier concentration, represents the carrier mobility; High-resolution transmission electron microscopy and X-ray diffraction were used to characterize the crystal structure and the distribution of microscopic defects.

6. The gallium oxide crystal micro defect and doping control method according to claim 5, characterized in that: The specific temperature includes: the temperature range is 850K ~ 1050K.

7. A gallium oxide crystal micro defect and doping control system, used to implement the gallium oxide crystal micro defect and doping control method according to any one of claims 1 to 6, characterized in that: include: Gallium oxide generation module, defect control module, doping control module and optimization verification module; The gallium oxide production module is used to grow gallium oxide crystals under specific temperature conditions by using chemical vapor deposition or molecular beam epitaxy to obtain gallium oxide crystals; The defect control module is used to mathematically model the microscopic defects of the gallium oxide crystal, analyze the microscopic defects in the gallium oxide crystal, and control them; The doping control module is used to analyze the doping concentration and distribution in the gallium oxide crystal, and to control the doping in the gallium oxide crystal; The optimization verification module is used to verify the optimization of the performance of the regulated gallium oxide crystal.

8. The gallium oxide crystal micro defect and doping control system according to claim 7, characterized in that: The defect control module includes: a defect calculation unit, a defect analysis unit and a defect processing unit; The defect calculation unit is used to calculate the defect density of the gallium oxide crystal; The defect analysis unit is used to establish a kinetic model for the formation of microscopic defects and analyze the diffusion behavior of dopants in the crystal; The defect treatment unit is used to perform annealing treatment on the grown gallium oxide crystal, reduce oxygen vacancies and grain boundary defects in the crystal by controlling the annealing temperature, time and gas flow rate, and perform feedback control on the defect generation rate.

9. An electronic device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the method for controlling microscopic defects and doping of gallium oxide crystals according to any one of claims 1 to 6 are implemented.

10. A computer-readable storage medium, characterized in that: Computer instructions are stored thereon, and when the computer instructions are executed by a processor, the steps of the method for controlling microscopic defects and doping of gallium oxide crystals according to any one of claims 1 to 6 are executed.

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