Hall chip, magnetic field sensor and magnetic field component detection method

Abstract

The invention discloses a Hall chip, a magnetic field sensor and a magnetic field component detection method.The Hall chip comprises a first magnetism gathering part, a Hall element and four second magnetism gathering parts, the Hall element is located on the surface of one side of the first magnetism gathering part, and the Hall element comprises four magnetic induction parts; the four magnetic induction parts are arranged in a closely adjacent manner and are distributed in a cross shape; the four second magnetism gathering parts are arranged on the surface of the side, away from the first magnetism gathering parts, of the matched magnetic induction part, the orthographic projection of each first magnetism gathering part on the magnetic induction part and the orthographic projection of each second magnetism gathering part on the magnetic induction part have an overlapping area, and at least part of the overlapping area is located in the sensitive center area of the magnetic induction part. The Hall chip provided by the invention has the advantages of high integration level, high sensitivity and strong anti-interference capability.

Description

Technical Field

[0001] The present application relates to the technical field of magnetic sensors, and in particular to a Hall chip, a magnetic field sensor, and a magnetic field component detection method. Background Art

[0002] Hall chips are widely used in motor drive, current sensing, displacement sensing and other fields. With the development of technology, there is an increasing demand for multi-dimensional Hall chips that can simultaneously sense multi-axis magnetic fields. Existing multi-axis Hall technology mainly integrates multiple sensor chips orthogonally installed in sensitive axes to achieve three-dimensional signal acquisition. They have installation errors, as well as problems such as low integration, low space utilization, and large size. Summary of the invention

[0003] In order to overcome the above shortcomings, the purpose of this application is to provide a Hall chip, a magnetic field sensor and a magnetic field component detection method, wherein the Hall chip can realize multi-dimensional magnetic field signal acquisition with high integration, high sensitivity and anti-interference.

[0004] In order to achieve the above objectives, the present application provides a Hall chip in a first aspect, the Hall chip comprising: A first magnetic focusing part; A Hall element is located on a side surface of the first magnetic concentrator, and the Hall element includes four magnetic sensing parts, and the four magnetic sensing parts are arranged in a closely adjacent manner and distributed in a cross shape; Four second magnetic focusing parts are arranged on a side surface of the matching magnetic induction part away from the first magnetic focusing part, The orthographic projection of each of the first magnetic focusing parts on the magnetic induction part and the orthographic projection of the second magnetic focusing part on the magnetic induction part have an overlapping area, and at least part of the overlapping area is located in the sensitive center area of ​​the magnetic induction part. The four magnetic induction parts can be arranged in a closely adjacent manner as a whole, so that the spacing between the four magnetic induction parts will not be too large. They can be cut out from the same substrate.

[0005] In one embodiment, the four magnetic induction parts include: two magnetic induction parts arranged along the first diagonal line and two magnetic induction parts arranged along the second diagonal line. The orientation of each magnetic induction unit is the same, and the angle between the orientation of each magnetic induction unit and the direction of its corresponding diagonal line is between -10° and 10°, or the angle between the orientation of each magnetic induction unit and the direction of its corresponding diagonal line is between 35° and 55°.

[0006] In one embodiment, the orientation of each of the magnetic induction portions is the same, and the angle between the orientation of each of the magnetic induction portions and the direction of its corresponding diagonal is 0°, or the angle between the orientation of each of the magnetic induction portions and the direction of its corresponding diagonal is 45°.

[0007] In one embodiment, an end of the second magnetic focusing portion close to the center of the Hall element exceeds the sensitive central area of ​​the magnetic sensing portion, and an end of the second magnetic focusing portion away from the center of the Hall element exceeds an end of the magnetic sensing portion away from the center of the Hall element. Both ends of the first magnetic focusing portion on the first diagonal and / or the second diagonal exceed the sensitive central area of ​​the magnetic sensing portion, and both ends of the first magnetic focusing portion on the first diagonal and / or the second diagonal do not exceed one end of the magnetic sensing portion away from the center of the Hall element.

[0008] In one embodiment, in a thickness direction perpendicular to the first magnetic focusing portion, the first magnetic focusing portion is cross-shaped, circular, octagonal or rectangular, and the second magnetic focusing portion is polygonal, elliptical or quasi-circular; The pattern of the first magnetic concentrator is symmetrically arranged along the first diagonal line and / or the second diagonal line. The figure formed by the four second magnetic concentrating parts is symmetrically arranged along the first diagonal line and / or the second diagonal line; The materials of the first magnetic focusing portion and the second magnetic focusing portion both include ferrite or nanomagnetic crystal.

[0009] In one embodiment, it further comprises: The electrode portion covers a portion of a surface of the magnetic induction portion close to the second magnetic focusing portion and forms an ohmic contact with the magnetic induction portion.

[0010] In one embodiment, the electrode portion comprises: four signal electrodes, a working positive electrode and a ground electrode; or four signal electrodes, a working positive electrode, a working ground electrode and two signal ground electrodes; Or working negative electrode, dual signal electrodes, signal and ground electrodes and positive electrode.

[0011] A second aspect of the present application provides a magnetic field sensor, the magnetic field sensor comprising: Encapsulation body; The Hall chip as described above is arranged in the package; A conditioning circuit, electrically connected to the Hall chip; A plurality of pins are arranged on two opposite sides of the outside of the package body and are electrically connected to the conditioning circuit.

[0012] A third aspect of the present application provides a method for detecting a magnetic field component based on a magnetic field sensor, the method comprising the following steps: Obtaining the signal voltage between the two magnetic sensing parts on each diagonal line; Obtaining sensitivity gain coefficients of two magnetic sensing parts on the first diagonal line on the X-axis and sensitivity gain coefficients of two magnetic sensing parts on the second diagonal line on the Y-axis; The X-axis magnetic field component and the Y-axis magnetic field component are obtained according to the signal voltage between the two magnetic induction parts on each diagonal line, the sensitivity gain coefficients of the two magnetic induction parts on the first diagonal line on the X-axis, and the sensitivity gain coefficients of the two magnetic induction parts on the second diagonal line on the Y-axis.

[0013] In one embodiment, the step of obtaining the sensitivity gain coefficients of the two magnetic sensing parts on the first diagonal line on the X-axis and the sensitivity gain coefficients of the two magnetic sensing parts on the second diagonal line on the Y-axis further includes: Obtaining the sensitivity gain coefficient of each magnetic sensing part in the Z axis; The step of obtaining the X-axis magnetic field component and the Y-axis magnetic field component according to the signal voltage between the two magnetic sensing parts on each diagonal line, the sensitivity gain coefficients of the two magnetic sensing parts on the first diagonal line on the X-axis, and the sensitivity gain coefficients of the two magnetic sensing parts on the second diagonal line on the Y-axis also includes: According to the signal voltage between the two magnetic induction parts on each diagonal line, the sensitive gain coefficient of the two magnetic induction parts on the first diagonal line on the X-axis, the sensitive gain coefficient of the two magnetic induction parts on the second diagonal line on the Y-axis, and the sensitive gain coefficient of each magnetic induction part on the Z-axis, the Z-axis magnetic field component, the X-axis magnetic field component and the Y-axis magnetic field component are obtained. Beneficial Effects

[0014] In the present application, four magnetic sensing parts are arranged in a closely adjacent manner and in a cross-shaped distribution, and a first magnetic focusing part and a second magnetic focusing part are respectively provided on the two side surfaces of each magnetic sensing part to generate a directional bidirectional magnetic conduction deflection, so that the X-axis magnetic field and / or the Y-axis magnetic field are respectively introduced into the two magnetic sensing parts in two opposite directions to generate a differential signal, thereby realizing the magnetic field detection of two axes (X-axis and Y-axis), and the first magnetic focusing part and the second magnetic focusing part both cover the sensitive central area of ​​the corresponding magnetic sensing part at the same time, which can improve the detection sensitivity of the X-axis magnetic field and the Y-axis magnetic field. At the same time, the four magnetic sensing parts are located in the same plane, so that the Hall chip has the ability to resist interference when detecting the X-axis magnetic field and / or the Y-axis magnetic field. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The accompanying drawings are used to provide an understanding of the technical solution of the present application and constitute a part of the specification. Together with the embodiments of the present application, they are used to explain the technical solution of the present application and do not constitute a limitation on the technical solution of the present application. The shapes and sizes of the components in the accompanying drawings do not reflect the actual proportions and are only intended to illustrate the content of the present application.

[0016] Figure 1 A schematic diagram of the Hall chip provided in the first aspect of the present application Figure 1 ; Figure 2 A schematic diagram of a top view of the Hall chip provided in the first aspect of the present application Figure 1 ; Figure 3 A schematic diagram of a top view of the Hall chip provided in the first aspect of the present application Figure 2 ; Figure 4 A schematic diagram of a top view of the Hall chip provided in the first aspect of the present application Figure 3 ; Figure 5 A schematic diagram of the Hall chip provided in the first aspect of the present application Figure 2 ; Figure 6 A schematic cross-sectional view of the Hall chip provided in the first aspect of the present application; Figure 7 A schematic top view of the magnetic field sensor provided in the second aspect of the present application Figure 1 ; Figure 8 A schematic top view of the magnetic field sensor provided in the second aspect of the present application Figure 2 ; Fig. 9 A schematic top view of the magnetic field sensor provided in the second aspect of the present application Figure 3 . DETAILED DESCRIPTION

[0017] The above scheme is further described below in conjunction with specific examples. It should be understood that these examples are used to illustrate the present application and are not limited to the scope of the present application. The implementation conditions adopted in the examples can be further adjusted as the conditions of the specific manufacturer, and the unspecified implementation conditions are usually the conditions in conventional experiments.

[0018] Unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present application should be understood by people with ordinary skills in the field to which the present application belongs. The "first", "second" and similar words used in the embodiments of the present application do not represent any order, quantity or importance, but are only used to distinguish different components. "Including" or "comprising" and similar words mean that the elements or objects appearing in front of the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connecting" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. In this article, "electrical connection" includes the situation where the constituent elements are connected together through an element with a certain electrical effect. "Elements with a certain electrical effect" are not particularly limited as long as the electrical signals between the connected constituent elements can be given and received. "Elements with a certain electrical effect" can be, for example, electrodes or wiring, or switching elements such as transistors, or other functional elements such as resistors, inductors or capacitors. "Up", "down", "left", "right", etc. are only used to indicate relative position relationships. When the absolute position of the object being described changes, the relative position relationship may also change accordingly.

[0019] In this application, the directions or positional relationships indicated by the terms "upper", "lower", "inner", "middle", etc. are based on the directions or positional relationships shown in the drawings. These terms are mainly used to better describe the present application and its embodiments, and are not used to limit the indicated devices, elements or components to have a specific direction, or to be constructed and operated in a specific direction.

[0020] Next, combine Figure 1-Figure 6 The Hall chip 100 provided in the first aspect of the present application is described. The Hall chip 100 has high sensitivity and strong differential signal anti-interference capability.

[0021] The Hall chip 100 includes a first magnetic focusing part 20, a Hall element and four second magnetic focusing parts 30, wherein the Hall element is located on one side surface of the first magnetic focusing part 20, the Hall element includes four magnetic sensing parts 10, and the four magnetic sensing parts 10 are arranged in a closely adjacent manner and distributed in a cross shape, the four second magnetic focusing parts 30 are arranged on the side surface of the matching magnetic sensing part 10 away from the first magnetic focusing part 20, the orthographic projection of each second magnetic focusing part 30 on the corresponding magnetic sensing part 10 and the orthographic projection of the first magnetic focusing part 20 on the magnetic sensing part 10 have an overlapping area, and at least part of the overlapping area is located in the sensitive center area G of the magnetic sensing part 10. In this embodiment, by distributing the four magnetic sensing parts 10 in a cross shape and arranging the first magnetic focusing part 20 and the second magnetic focusing part 30 on the two side surfaces of each magnetic sensing part, a directional bidirectional magnetic conduction deflection is generated, so that the X-axis magnetic field and / or the Y-axis magnetic field are respectively introduced into the two magnetic sensing parts 10 in two opposite directions (wherein the magnetic lines of force of the X-axis magnetic field and / or the Y-axis magnetic field are as shown in FIG. Figure 6 As shown), a differential signal is generated to realize magnetic field detection of two axes (X-axis and Y-axis), and the first magnetic focusing part 20 and the second magnetic focusing part 30 both cover the sensitive central area G of the corresponding magnetic sensing part 10 at the same time. It should be noted that the width of the sensitive central area G is approximately 1 / 3 of the diagonal spacing in the Hall area, and the length is slightly larger than the inner diagonal, which can improve the detection sensitivity of the X-axis magnetic field and the Y-axis magnetic field. At the same time, the four magnetic sensing parts 10 are located in the same plane, so that the Hall chip 100 has anti-interference ability in detecting the X-axis magnetic field and / or the Y-axis magnetic field.

[0022] It should be noted that, in the present embodiment, the four magnetic sensing parts 10 in the Hall element are arranged in a closely adjacent manner, which specifically means that the four magnetic sensing parts 10 are cut out from the same substrate (wafer) as a whole, so that the spacing between the four magnetic sensing parts 10 will not be too large, thereby making the area of ​​the four magnetic sensing parts 10 not too large, and further allowing the Hall chip 100 to be packaged in a volume of millimeters square, thereby achieving miniaturization and low cost of the Hall chip 100.

[0023] refer to Figure 1 and Figure 5In a specific embodiment, the four magnetic induction units 10 include two magnetic induction units 10 arranged along the first diagonal m, such as the first magnetic induction unit A and the second magnetic induction unit B, and two magnetic induction units 10 arranged along the second diagonal n, such as the third magnetic induction unit C and the fourth magnetic induction unit D. The direction of the first diagonal m is perpendicular to the direction of the second diagonal n. It should be noted that the first diagonal m and the second diagonal n here do not actually exist, and are mainly used to limit the above-mentioned cross-shaped distribution. Furthermore, the orientation f of each magnetic induction unit 10 is the same, such as the angle between the orientation f of each magnetic induction unit 10 and the direction of its corresponding diagonal is between -10°-10° (such as -10°, -5°, 0°, 5°, 10°), that is, the orientation f of each magnetic induction unit 10 is parallel or approximately parallel to the direction of its corresponding diagonal. As a preferred embodiment, Figure 5 As shown, the angle between the orientation f of each magnetic sensing part 10 and the direction of the diagonal line corresponding to it is 0°. Exemplarily, the orientation f of the first magnetic sensing part A (or the orientation f of the second magnetic sensing part B) is parallel or approximately parallel to the direction of the first diagonal line m, and the orientation f of the third magnetic sensing part C (or the orientation f of the fourth magnetic sensing part D) is parallel or approximately parallel to the direction of the second diagonal line n. For example, the angle between the orientation f of each magnetic sensing part 10 and the direction of the diagonal line corresponding to it is between 35° and 55° (such as 35°, 40°, 45°, 50°, 55°). As a preferred embodiment, Figure 1-Figure 4 As shown, the angle between the orientation f of each magnetic induction part 10 and the direction of the corresponding diagonal line is 45°. For example, the angle between the orientation f of the first magnetic induction part A (or the orientation f of the second magnetic induction part B) and the direction of the first diagonal line m is between 35° and 55°, and the angle between the orientation f of the third magnetic induction part C (or the orientation f of the fourth magnetic induction part D) and the direction of the second diagonal line n is between 35° and 55°.

[0024] refer to Figure 6In a specific embodiment, an end 31 of the second magnetic focusing portion 30 close to the center 101 of the Hall element exceeds the sensitive central area G of the magnetic sensing portion 10, and an end 32 of the second magnetic focusing portion 30 away from the center 101 of the Hall element exceeds an end 11 of the magnetic sensing portion 10 away from the center 101 of the Hall element, and both ends 21 of the first magnetic focusing portion 20 on the first diagonal m and / or the second diagonal n exceed the sensitive central area G of the magnetic sensing portion 10, and both ends of the first magnetic focusing portion 20 on the first diagonal m and / or the second diagonal n do not exceed an end of the magnetic sensing portion 10 away from the center 101 of the Hall element. It should be noted that the center 101 of the Hall element here is specifically the center formed by the four magnetic sensing parts. This design, on the one hand, prevents the X-axis magnetic field or the Y-axis magnetic field from being directly conducted to the first magnetic sensing part 20 by the second magnetic sensing part 30 and cannot be detected by the magnetic sensing part 10, thereby improving the detection accuracy of the Hall chip 100. On the other hand, it can better exert the magnetic conductivity effect of the first magnetic sensing part 20, thereby introducing the X-axis magnetic field or the Y-axis magnetic field exceeding one of the magnetic sensing parts 10 into the other magnetic sensing part 10, and through cooperation with the second magnetic sensing part 30, the directions of the X-axis magnetic field or the Y-axis magnetic field introduced into the two magnetic sensing parts 10 are opposite, thereby forming a magnetic field differential signal.

[0025] Exemplarily, in the thickness direction perpendicular to the first magnetic focusing portion 20 (which can also be understood here as in the top view direction of the first magnetic focusing portion or the second magnetic focusing portion), the first magnetic focusing portion 20 is cross-shaped, circular, octagonal or rectangular, and the second magnetic focusing portion 30 is polygonal, elliptical or quasi-circular. Furthermore, the pattern of the first magnetic focusing portion is symmetrically arranged along the first diagonal m and / or the second diagonal n, and the pattern formed by the four second magnetic focusing portions is symmetrically arranged along the first diagonal m and / or the second diagonal n.

[0026] In one embodiment, the materials of the first magnetic focusing part 20 and the second magnetic focusing part 30 are both non-magnetic. The first magnetic focusing part 20 can be made of ferrite, nanomagnetic crystals or other materials with high magnetic permeability, and the second magnetic focusing part 30 can be made of ferrite, nanomagnetic crystals or other materials with high magnetic permeability. The materials of the first magnetic focusing part 20 and the second magnetic focusing part 30 can be the same or different. Preferably, the materials of the first magnetic focusing part 20 and the second magnetic focusing part 30 are the same.

[0027] refer to Figure 1-Figure 5In a specific embodiment, the Hall element further includes an electrode portion, which covers a portion of a side surface of the four magnetic sensing portions 10 close to the second magnetic focusing portion 30 and forms an ohmic contact with the magnetic sensing portion 10. The electrode portion includes a plurality of electrodes, such as a signal electrode 41, a working ground electrode or a signal ground electrode 44, etc. The number of electrodes in the electrode portion affects whether the Hall chip 100 detects a three-axis magnetic field component or a two-axis magnetic field component. When the Hall chip 100 is a Hall chip 100 for detecting a three-axis magnetic field component, the electrode portion of the Hall chip 100 includes six independent electrodes, that is, the Hall chip 100 is The Hall chip 100 has a six-electrode structure. It should be noted that the six electrodes here refer to six independent electrodes. The electrode portion of the Hall chip 100 may also include eight independent electrodes, that is, the Hall chip 100 is a Hall chip 100 with an eight-electrode structure. It should be noted that the eight electrodes here refer to eight independent electrodes. When the Hall chip 100 is a Hall chip 100 for detecting two-axis magnetic field components, the electrode portion of the Hall chip 100 includes four independent electrodes, that is, the Hall chip 100 is a Hall chip 100 with a four-electrode structure. It should be noted that the four electrodes here refer to four independent electrodes.

[0028] refer to Figure 3 and Figure 5 , if the Hall chip 100 is a Hall chip 100 with a six-electrode structure, the electrode part includes four signal electrodes 41, which respectively form an ohmic contact with one end of each magnetic sensing part 10, a working positive electrode 42, including two working positron electrodes 421, each working positron electrode 421 is simultaneously connected to two adjacent magnetic sensing parts 10, an electrode ground electrode 43, which is simultaneously connected to four magnetic sensing parts 10 and is located at the center of the four magnetic sensing parts 10, where the electrode ground electrode 43 specifically refers to the electrode simultaneously sharing the working ground electrode and the signal ground electrode of the four magnetic sensing parts 10; refer to Figure 1-Figure 2 For example, when the Hall chip 100 is an eight-electrode structure Hall chip 100, the electrode part includes four signal electrodes 41, which respectively form ohmic contact with one end of each magnetic sensing part 10, a working positive electrode 42, including two working positron electrodes 421, each working positron electrode 421 is simultaneously connected to two adjacent magnetic sensing parts 10, two signal ground electrodes 44, each signal ground electrode 44 is simultaneously connected to two adjacent and non-opposite magnetic sensing parts 10, a common working ground electrode 45, which is simultaneously connected to four magnetic sensing parts 10 and is located at the center of the four magnetic sensing parts 10. The common working ground electrode 45 here specifically refers to the working ground electrode of the four magnetic sensing parts 10 that this electrode simultaneously shares.

[0029] refer to Figure 4, the Hall chip 100 is a Hall chip 100 with a four-electrode structure, in which the electrode part includes a working negative electrode 46, a dual signal electrode 47, a signal and ground electrode 48 and a signal and positive electrode 49, wherein the signal and ground electrode 48 is formed by merging the signal electrode corresponding to one of the magnetic induction parts 10 on the first diagonal m and the working ground electrode; the signal and positive electrode 49 is formed by merging the signal electrode corresponding to one of the magnetic induction parts 10 on the second diagonal n and the working ground electrode, wherein the dual signal electrode 47 is formed by merging the signal electrode corresponding to another magnetic induction part 10 on the first diagonal m and the signal electrode corresponding to another magnetic induction part 10 on the second diagonal n. , illustratively, the signal electrode and the electrode ground electrode corresponding to the first magnetic induction part A are merged to form a signal and ground electrode 48, the signal electrode 41 and the working positive electrode 42 corresponding to the fourth magnetic induction part D are merged to form a signal and positive electrode 49, the signal electrodes of the second magnetic induction part B and the third magnetic induction part C are merged to form a dual signal common electrode 47, and at the same time, in order to maintain the difference, a working negative electrode 46 is added, wherein the signal and ground electrode 48 and the dual signal electrode 47 can output the signal voltage between the first magnetic induction part A and the second magnetic induction part B, and the signal working positive common electrode 49 and the dual signal electrode 47 can output the signal voltage between the third magnetic induction part C and the fourth magnetic induction part D. Of course, the four-electrode structure in this embodiment is only one of many electrode sharing forms, and it can also be other electrode sharing forms, such as the four-electrode structure can also include a working negative electrode and a signal electrode of a magnetic induction part merged to form a signal and negative electrode, a dual signal electrode, a ground electrode and a signal and working positive electrode.

[0030] Next, combine Figure 7-Figure 9 To describe the second aspect of the present application, a magnetic field sensor is provided, which includes a package, a Hall chip 100, a conditioning circuit 200 and a plurality of pins 300, the Hall chip 100 and the conditioning circuit 200 are arranged in the package, and the Hall chip 100 is electrically connected to the conditioning circuit 200, and the plurality of pins 300 are arranged on two opposite sides outside the package and are electrically connected to the conditioning circuit 200.

[0031] It should be noted that, when the Hall chip 100 has an eight-electrode structure, the number of pins 300 is also eight, and of course it can be more than eight, such as ten (generally the number of pins 300 is an even number); when the Hall chip 100 has a four-independent electrode structure, the number of pins 300 is also four, and of course it can be more than four, such as six or eight.

[0032] refer to Figure 7-Figure 9In a specific embodiment, each electrode in the electrode part is electrically connected to the conditioning circuit 200 through a metal lead 400, and the conditioning circuit 200 transmits the conditioned signal to the corresponding pin 300. In order to avoid the metal lead 400 overlapping with the second magnetic focusing part 30 and affecting the signal transmission, at least one adapter circuit board 500 is provided in the package body, and the adapter circuit board 500 is used to transfer the signal output by each electrode in the electrode part to the conditioning circuit 200. A adapter circuit board 500 is provided on one side of the Hall chip 100 and on both sides of the first magnetic sensing part A, respectively. Figure 7 As shown, when the Hall chip 100 is an eight-electrode structure, two adapter circuit boards 500 are required. The working positron electrode 421 and the common working ground electrode 45 shared by the first magnetic sensing unit A and the third magnetic sensing unit C are connected to one of the adapter circuit boards 500 through metal leads 400, and the adapter circuit board 500 is further connected to the conditioning circuit 200 through the metal leads 400. The signal electrode 41 of the first magnetic sensing unit A and the signal electrode 41 of the fourth magnetic sensing unit D are connected to another adapter circuit board 500 through metal leads 400, and the adapter circuit board 500 is further connected to the conditioning circuit 200 through metal leads, and the remaining electrodes are directly connected to the conditioning circuit 200 through metal leads 400. Figure 8 As shown, when the Hall chip 100 is a six-electrode structure, two adapter circuit boards 500 are required. The working positron electrode 421 and the electrode ground electrode 43 shared by the first magnetic sensing part A and the third magnetic sensing part C are connected to one of the adapter circuit boards 500 through the metal lead 400, and the adapter circuit board 500 is connected to the conditioning circuit 200 through the metal lead 400. The signal electrode 41 of the first magnetic sensing part A and the signal electrode 41 of the fourth magnetic sensing part D are connected to another adapter circuit board 500 through the metal lead 400, and the adapter circuit board 500 is connected to the conditioning circuit 200 through the metal lead 400. The remaining electrodes are directly connected to the conditioning circuit 200 through the metal lead 400. Fig. 9 As shown, when the Hall chip 100 is a four-electrode structure, a transfer circuit board 500 is required, and the working negative electrode 46 and the signal and ground electrode 48 are connected to the transfer circuit board 500 through the metal lead 400, and the transfer circuit board 500 is connected to the conditioning circuit 200 through the metal lead 400, and the remaining electrodes are directly connected to the conditioning circuit 200 through the metal lead 400. It should be noted that the two working positive electrodes 421 of the working positive electrode 42 share a pin 300.

[0033] Next, the third aspect of the present application provides a method for detecting magnetic field components based on a magnetic field sensor. When the magnetic field sensor is a four-electrode structure, the magnetic field sensor can detect the magnetic field component of the X axis and the magnetic field component of the Y axis. The specific detection method is as follows: Obtaining the signal voltage between the two magnetic sensing units 10 on each diagonal line; Obtaining the sensitivity gain coefficients of the two magnetic sensing parts 10 on the first diagonal line m on the X-axis and the sensitivity gain coefficients of the two magnetic sensing parts 10 on the second diagonal line n on the Y-axis; According to the signal voltage between the two magnetic sensing units 10 on each diagonal, the sensitivity gain coefficients of the two magnetic sensing units 10 on the first diagonal m on the X-axis, and the sensitivity gain coefficients of the two magnetic sensing units 10 on the second diagonal n on the Y-axis, the X-axis magnetic field component and the Y-axis magnetic field component are obtained.

[0034] Specifically, let the signal voltage V of the first magnetic sensing unit A be A , then V A =K1B z -K x B x ; The signal voltage V of the second magnetic induction unit B B , then V B =K2B z +K x B x , the signal voltage V of the third magnetic sensing unit C C , then V C =K3B z +K y B y ; The signal voltage V of the fourth magnetic sensing unit D D , then V D =K4B z -K y B y , where B z represents the Z-axis magnetic field component, B x represents the X-axis magnetic field component, B y represents the Y-axis magnetic field component, K1, K2, K3, K4 represent the sensitivity gain coefficient of each magnetic sensing unit 10 in the Z-axis, K x represents the sensitivity gain of the first magnetic sensing part A and the second magnetic sensing part B on the X-axis, K y represents the sensitivity gain of the third magnetic sensing part C and the fourth magnetic sensing part D on the Y axis, The signal voltage between the two magnetic sensing parts 10 on the first diagonal line m is the signal voltage between the signal and ground electrode 48 and the dual signal common electrode 47, that is, V AB =V B -V A = 2K x B x +( K2- K1) B z ; The signal voltage between the two magnetic sensing parts 10 on the second diagonal line n is the signal voltage between the signal working positive common electrode 49 and the double signal common electrode 47, that is, V CD =V C -V D = 2K y B y +( K3- K4) B z ; Based on the conditioning circuit 200, the sensitive gain coefficient of the magnetic induction part 10 in the Z axis is adjusted so that the sensitive gain coefficients of the two magnetic induction parts 10 on the first diagonal m in the Z axis are equal, and the sensitive gain coefficients of the two magnetic induction parts 10 on the second diagonal n in the Z axis are equal, that is, K2- K1= K3- K4=0. It should be noted that the sensitive gain coefficient of the Z axis can also be adjusted here when the Hall chip 100 is manufactured. The first magnetic focusing part 20 and the second magnetic focusing part 30 are respectively manufactured on the upper and lower surfaces of the Hall element by the photolithography method to achieve precise positioning of the Hall element, the first magnetic focusing part 20 and the second magnetic focusing part 30. When the Hall element, the first magnetic focusing part 20 and the second magnetic focusing part 30 are precisely positioned, K2- K1= K3- K4=0.

[0035] Since K2- K1= K3- K4=0, then V AB =V B -V A = 2K x B x , V CD =V C -V D = 2K y B y ;B can be obtained by calculation x =V AB / 2K x , B y = V CD / 2K y .

[0036] When the magnetic field sensor is a six-electrode structure or an eight-electrode structure, the magnetic field sensor can detect three-axis magnetic field components, namely, the magnetic field component of the X axis, the magnetic field component of the Y axis, and the magnetic field component of the Z axis. The specific detection method is as follows: Obtaining a signal voltage between two magnetic sensing parts 10 on each diagonal line; Here, the signal voltage of each magnetic induction part 10 on each diagonal line is first obtained, such as the signal voltage V of the first magnetic induction part A. A =K1B z -K x1 B x , the signal voltage V of the second magnetic sensing unit BB =K2B z +K x2 B x , the signal voltage V of the third magnetic sensing unit C C =K3B z +K y1 B y , the signal voltage V of the fourth magnetic sensing unit D D =K4B z -K y 2B y , and then obtain the signal voltage between the two magnetic induction units 10 on the diagonal line. The signal voltage between the two magnetic induction units 10 on each diagonal line can also be understood as the signal voltage difference between the two magnetic induction units 10, such as the signal voltage difference V between the two magnetic induction units 10 on the first diagonal line m. B -V A =(K x1 + K x2 )B x +(K2-K1)B z , the signal voltage difference V between the two magnetic sensing units 10 on the second diagonal line n C -V D = (K y 1+ K y2 )By+(K3-K4)B z In addition, since the signal voltage of each magnetic induction unit is known in this step, the sum of the signal voltages of the four magnetic induction units 10 can be known, V A +V B + V C +V D = (K1+K2+ K3+K4)B z +(K x2 -K x1 )B x +(K y1 -K y2 )By. Where B z represents the Z-axis magnetic field component, B x represents the X-axis magnetic field component, B y represents the Y-axis magnetic field component, B z represents the Z-axis magnetic field component, K1, K2, K3, K4 respectively represent the sensitivity gain coefficient of each magnetic sensing unit 10 in the Z-axis, K x1 represents the sensitivity gain of the first magnetic sensing part A on the X axis, K x2 represents the sensitivity gain of the second magnetic sensing part B on the X axis, K y1 represents the sensitivity gain of the third magnetic sensing part C on the X axis, K y2 Represents the sensitivity gain of the fourth magnetic sensing unit D in the Y-axis; The step of obtaining the sensitivity gain coefficients of the two magnetic sensing parts 10 on the first diagonal line m on the X-axis and the sensitivity gain coefficients of the two magnetic sensing parts 10 on the second diagonal line n on the Y-axis also includes obtaining the sensitivity gain coefficient of each magnetic sensing part on the Z-axis; According to the signal voltage between the two magnetic induction units 10 on each diagonal, the sensitive gain coefficient of the two magnetic induction units 10 on the first diagonal m on the X-axis, the sensitive gain coefficient of the two magnetic induction units 10 on the second diagonal n on the Y-axis, and the sensitive gain coefficient of each magnetic induction unit on the Z-axis, the Z-axis magnetic field component, the X-axis magnetic field component and the Y-axis magnetic field component are obtained.

[0037] In this step, the conditioning circuit 200 adjusts the back-end signal gain of the magnetic sensing unit 10 so that the sensitivity gain coefficients of the two magnetic sensing units 10 on the first diagonal line m on the X-axis are equal, that is, K x1 =K x2 = K x , so that the sensitivity gain coefficients of the two magnetic sensing parts 10 on the second diagonal line n on the X axis are equal, that is, K y3 =K y4 = K y It should be noted here that the conditioning circuit 200 adjusts the rear-end signal gain of the magnetic induction unit 10. This means that on the first diagonal line m, it is sufficient to adjust the rear-end signal gain of one of the magnetic induction units 10. Similarly, on the second diagonal line n, it is sufficient to adjust the rear-end signal gain of one of the magnetic induction units 10.

[0038] Due to K x1 =K x2 = K x , K y3 =K y4 = K y , then V B -V A =2K x B x +(K2-K1)B z , V C -V D = 2K y B y +(K3-K4)B z , V A +V B + V C +V D = (K1+K2+ K3+K4)B z .

[0039] Finally, we can get the magnetic field component B of the Z axis by calculation. z =( V B +V A +VC +V D ) / (K1+K2+K3+K4), magnetic field component of X axis: B x = [(V B -V A )-(K2-K1)B z ] / 2k x , magnetic field component of the Y axis: B y = [(V C -V D )-(K3-K4)B z ] / 2k y。

[0040] The above embodiments are only for illustrating the technical concept and features of the present application, and their purpose is to enable people familiar with the technology to understand the content of the present application and implement it accordingly, and they cannot be used to limit the protection scope of the present application. Any equivalent transformation or modification made according to the spirit of the present application shall be included in the protection scope of the present application.

Claims

1. A Hall chip, characterized in that: include: A first magnetic focusing part; A Hall element is located on a side surface of the first magnetic concentrator, and the Hall element includes four magnetic sensing parts, which are arranged in a closely adjacent manner and distributed in a cross shape; Four second magnetic focusing parts are arranged on a side surface of the matching magnetic induction part away from the first magnetic focusing part, The orthographic projection of each of the first magnetic focusing portions on the magnetic sensing portion and the orthographic projection of the second magnetic focusing portion on the magnetic sensing portion have an overlapping area, and at least part of the overlapping area is located in the sensitive central area of ​​the magnetic sensing portion.

2. The Hall chip according to claim 1, characterized in that: The four magnetic induction parts include: two magnetic induction parts arranged along the first diagonal line and two magnetic induction parts arranged along the second diagonal line, The orientation of each magnetic induction unit is the same, and the angle between the orientation of each magnetic induction unit and the direction of its corresponding diagonal line is between -10° and 10°, or the angle between the orientation of each magnetic induction unit and the direction of its corresponding diagonal line is between 35° and 55°.

3. The Hall chip according to claim 2, characterized in that: The orientation of each magnetic induction portion is the same, and the angle between the orientation of each magnetic induction portion and the direction of its corresponding diagonal line is 0°, or the angle between the orientation of each magnetic induction portion and the direction of its corresponding diagonal line is 45°.

4. The Hall chip as claimed in claim 2 or 3, characterized in that: An end of the second magnetic concentrator close to the center of the Hall element exceeds the sensitive central area of ​​the magnetic induction portion, and an end of the second magnetic concentrator far from the center of the Hall element exceeds an end of the magnetic induction portion far from the center of the Hall element. Both ends of the first magnetic focusing portion on the first diagonal and / or the second diagonal exceed the sensitive central area of ​​the magnetic sensing portion, and both ends of the first magnetic focusing portion on the first diagonal and / or the second diagonal do not exceed one end of the magnetic sensing portion away from the center of the Hall element.

5. The Hall chip according to claim 2, characterized in that: In a thickness direction perpendicular to the first magnetic concentrating portion, the first magnetic concentrating portion is cross-shaped, circular, octagonal or rectangular, and the second magnetic concentrating portion is polygonal, elliptical or quasi-circular; The pattern of the first magnetic concentrator is symmetrically arranged along the first diagonal line and / or the second diagonal line. The figure formed by the four second magnetic concentrating parts is symmetrically arranged along the first diagonal line and / or the second diagonal line; The materials of the first magnetic focusing portion and the second magnetic focusing portion both include ferrite or nanomagnetic crystal.

6. The Hall chip according to claim 1, characterized in that: Also includes: The electrode portion covers a portion of a surface of the magnetic induction portion close to the second magnetic focusing portion and forms an ohmic contact with the magnetic induction portion.

7. The Hall chip according to claim 6, characterized in that: The electrode portion comprises: four signal electrodes, a working positive electrode and a ground electrode; or four signal electrodes, a working positive electrode, a working ground electrode and two signal ground electrodes; Or working negative electrode, dual signal electrodes, signal and ground electrodes, and signal and positive electrodes.

8. A magnetic field sensor, characterized in that: include: Encapsulation body; The Hall chip according to any one of claims 1 to 7, which is arranged in the package; A conditioning circuit, electrically connected to the Hall chip; A plurality of pins are arranged on two opposite sides of the outside of the package body and are electrically connected to the conditioning circuit.

9. A method for detecting magnetic field components based on a magnetic field sensor, characterized in that: The steps include: Obtaining the signal voltage between the two magnetic sensing parts on each diagonal line; Obtaining sensitivity gain coefficients of two magnetic sensing parts on the first diagonal line on the X-axis and sensitivity gain coefficients of two magnetic sensing parts on the second diagonal line on the Y-axis; The X-axis magnetic field component and the Y-axis magnetic field component are obtained according to the signal voltage between the two magnetic induction parts on each diagonal line, the sensitivity gain coefficients of the two magnetic induction parts on the first diagonal line on the X-axis, and the sensitivity gain coefficients of the two magnetic induction parts on the second diagonal line on the Y-axis.

10. The method for detecting magnetic field components based on a magnetic field sensor according to claim 9, characterized in that: The step of obtaining the sensitivity gain coefficients of the two magnetic sensing parts on the first diagonal line on the X-axis and the sensitivity gain coefficients of the two magnetic sensing parts on the second diagonal line on the Y-axis also includes: Obtaining the sensitivity gain coefficient of each magnetic sensing part in the Z axis; The step of obtaining the X-axis magnetic field component and the Y-axis magnetic field component according to the signal voltage between the two magnetic sensing parts on each diagonal line, the sensitivity gain coefficients of the two magnetic sensing parts on the first diagonal line on the X-axis, and the sensitivity gain coefficients of the two magnetic sensing parts on the second diagonal line on the Y-axis also includes: According to the signal voltage between the two magnetic induction parts on each diagonal line, the sensitive gain coefficient of the two magnetic induction parts on the first diagonal line on the X-axis, the sensitive gain coefficient of the two magnetic induction parts on the second diagonal line on the Y-axis, and the sensitive gain coefficient of each magnetic induction part on the Z-axis, the Z-axis magnetic field component, the X-axis magnetic field component and the Y-axis magnetic field component are obtained.

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