Cleaning method of metal etching equipment

Abstract

The invention discloses a cleaning method of metal etching equipment, the metal etching equipment comprises a process chamber and a bearing part installed in the process chamber, the bearing part is provided with at least one helium hole, and each helium hole is communicated with a purging gas source through a communicating pipeline; the cleaning method comprises the following steps: introducing cleaning gas into the process chamber, and controlling the purging gas source to introduce purging gas into each helium hole through the communicating pipeline; and stopping introducing the cleaning gas into the process chamber, and controlling to stop introducing the purging gas into each helium gas hole. According to the cleaning method of the metal etching equipment, the problems that when the process chamber of the metal etching equipment is cleaned at present, by-products may be accumulated in helium holes of the chuck, so that the electrostatic chuck needs to be dismounted and cleaned regularly, and even the electrostatic chuck is scrapped in a severe case can be solved.

Description

Technical Field

[0001] The present application belongs to the technical field of etching processing, and in particular relates to a cleaning method for metal etching equipment. Background Art

[0002] Metal etching equipment is a device for etching metals. During its use, some by-products will be produced as the etching process proceeds. Most of the by-products will be extracted outside the process chamber as the etching process proceeds, but a small amount of by-products will still be deposited on the side walls of the process chamber. Furthermore, in order to prevent the deposited by-products from having an adverse effect on the etching process, the etching equipment is usually cleaned after the etching equipment has been working for a period of time. Specifically, after the corresponding type of gas is introduced into the process chamber, the purpose of removing the by-products deposited on the side walls during the process can be achieved by ignition.

[0003] However, since the etched parts are not placed on the electrostatic chuck or other supporting parts during the cleaning process of the etching equipment, the by-products cleaned from the side walls of the process chamber may accumulate in the helium holes of the chuck during the cleaning process, so that the electrostatic chuck needs to be removed and cleaned regularly, and in severe cases, the electrostatic chuck may even be scrapped. Summary of the invention

[0004] The purpose of the embodiments of the present application is to provide a method for cleaning metal etching equipment to solve the problem that when cleaning the process chamber of the metal etching equipment, by-products may accumulate in the helium holes of the chuck, requiring the electrostatic chuck to be removed and cleaned regularly, and in severe cases even causing the electrostatic chuck to be scrapped.

[0005] The present application discloses a cleaning method for a metal etching device, wherein the metal etching device comprises a process chamber and a carrier installed in the process chamber, wherein the carrier is provided with at least one helium hole, and each of the helium holes is connected to a purge gas source through a connecting pipeline; the cleaning method comprises:

[0006] Introducing a cleaning gas into the process chamber, and controlling the purge gas source to introduce the purge gas into each of the helium holes through the connecting pipeline;

[0007] The cleaning gas is stopped from being introduced into the process chamber, and the purge gas is controlled to be stopped from being introduced into each of the helium holes.

[0008] In the cleaning method of the metal etching equipment disclosed in the embodiment of the present application, in the process of introducing cleaning gas into the process chamber to clean the by-products in the process chamber, the purge gas is also delivered to each helium hole through the purge gas source through the connecting pipeline, so that under the action of the purge gas with positive pressure, the by-products under cleaning are prevented from being deposited in the helium holes of the carrier, thereby ensuring that the service life of the carrier is relatively long. Correspondingly, after the cleaning process is completed in the process chamber, in order to prevent the purge gas from having an adverse effect on the subsequent working process of the process chamber, that is, when the cleaning gas is stopped from being introduced into the process chamber, the purge gas is also controlled to stop being introduced into each helium hole. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0010] Figure 1 A schematic diagram of the structure of a metal etching device disclosed in an embodiment of the present application;

[0011] Figure 2 It is a flow chart of a cleaning method for metal etching equipment disclosed in an embodiment of the present application.

[0012] Reference numerals:

[0013] 100-process chamber,

[0014] 200- bearing parts,

[0015] 310-main valve, 320-pressure monitoring component, 330-first valve, 340-second valve,

[0016] 410-connecting pipeline, 411-first pipe section, 412-second pipe section, 420-negative pressure branch,

[0017] 500-Exhaust equipment, DETAILED DESCRIPTION

[0018] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0019] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.

[0020] like Figure 1 and Figure 2 As shown, an embodiment of the present application discloses a cleaning method for metal etching equipment. When the by-products in the process chamber 100 of the metal etching equipment are cleaned by the cleaning method, the by-products cleaned can be prevented from being deposited in the helium holes of the carrier 200 and clogging the helium holes.

[0021] like Figure 1 As shown, the metal etching equipment may specifically include a process chamber 100 and a carrier 200 installed in the process chamber 100. The process chamber 100 is a device for providing an etching workspace. The carrier 200 is usually arranged at the bottom of the process chamber 100 or near the bottom. The carrier 200 is used to carry the workpiece to be etched, and may specifically be an electrostatic chuck. Of course, it may also be other types of chucks and other devices that can provide carrying and adsorption effects.

[0022] Furthermore, in order to enable the carrier 200 to have the ability to adjust the temperature of the part to be etched it carries, a helium hole is usually provided on the carrier 200. The helium hole can be connected to a helium gas source, so that during the etching process, the temperature of the part to be etched can be adjusted by delivering helium or other gases that do not react with the part to be etched to the helium hole. Of course, the number of helium holes can be multiple. In order to improve the uniformity of temperature regulation, the number of helium holes can be two or more. In the case where the number of helium holes is multiple, the number of connecting pipes 410 is also multiple, and the multiple connecting pipes 410 are connected to the multiple helium holes one by one, and the end of each connecting pipe 410 away from the helium hole is connected to the purge gas source. In order to facilitate the control of the on-off relationship between the purge gas source and the connecting pipe 410, a main valve 310 can be set between the multiple connecting pipes 410 and the purge gas source. In addition, in order to ensure that the anti-deposition ability of each helium hole is relatively good, the implementation scheme of the connecting pipes 410 connected to different helium holes can be the same.

[0023] More specifically, when there are multiple helium holes, the structural form of the pipeline between each helium hole and the purge gas source, as well as the parameters such as the number and position of devices such as valves and pressure monitoring components provided on the pipeline also correspond one to one. For the sake of ease of description, this technical solution is taken as an example below.

[0024] In the metal etching equipment disclosed in the embodiment of the present application, each helium hole is connected to the purge gas source through the connecting pipe 410, wherein the purge gas in the purge gas source may be of various types, and the purge gas may specifically be nitrogen or helium that is not easy to react with other materials. In a specific embodiment of the present application, the purge gas is an inert gas, which can prevent the purge gas from reacting with the by-products in the process chamber 100, resulting in the possibility that the by-products may still adhere to the hole wall of the helium hole. In addition, when the purge gas is helium, the connecting pipe 410 can be the pipe originally used to connect with the helium gas source in the metal etching equipment, and accordingly, the purge gas source can be the original helium gas source in the metal etching equipment. Of course, a separate connecting pipe 410 and purge gas source can also be reconfigured for the metal etching equipment. Correspondingly, when the purge gas is not helium, the purge gas source and the helium holes can be connected via the connecting pipe 410 to ensure that the purge gas source can deliver the purge gas to the helium holes via the connecting pipe 410 .

[0025] Based on the metal etching equipment of the above structure, the cleaning method disclosed in the embodiment of the present application includes:

[0026] S1. A cleaning gas is introduced into the process chamber 100, and the purge gas source is controlled to introduce the purge gas into each helium hole through the connecting pipe 410. Specifically, the type of cleaning gas can be selected according to the specific composition of the by-products in the process chamber 100, and by ignition and other methods, the ions generated by the cleaning gas react with the by-products adhering to the side wall of the process chamber 100 and other locations during the process, so as to achieve the purpose of removing the by-products on the side wall of the process chamber 100. As described above, the type of cleaning gas can be selected according to actual conditions, and correspondingly, the parameters such as the flow rate, ignition power and cleaning time of the cleaning gas can also be determined according to actual needs, which is not limited in this article.

[0027] In order to prevent the byproducts of cleaning from being deposited in the helium holes of the carrier 200 during the cleaning process of the process chamber 100, in the above step S1, during the process of introducing the cleaning gas into the process chamber 100, the purge gas source is also controlled to introduce the purge gas into each helium hole through the connecting pipe 410. That is, during the process of using the cleaning gas to clean the process chamber 100, the helium holes are always in a positive pressure state, and under the action of the purge gas, the byproducts of cleaning can be prevented from being deposited in the helium holes.

[0028] In addition, in order to ensure that the by-products removed from the side walls of the process chamber 100 during the cleaning process will not re-adhere to the inner wall of the process chamber 100, during the above-mentioned step S1, the operation of the exhaust mechanism in the process chamber 100 can also be controlled accordingly, so that the by-products generated during the cleaning process can be extracted by the exhaust mechanism to the outside of the process chamber 100, thereby ensuring that the by-products in the process chamber 100 can be reduced as the cleaning time continues to increase.

[0029] Accordingly, after the cleaning of the byproducts in the process chamber 100 is completed, or it is considered that the cleaning process has met the cleaning requirements, that is, after the above step S1 is completed, the cleaning method disclosed in the embodiment of the present application further includes:

[0030] S2. Stop the introduction of cleaning gas into the process chamber 100, and control to stop the introduction of purge gas into each helium hole. That is, by stopping the introduction of cleaning gas into the process chamber 100, the cleaning process is terminated. Accordingly, when no cleaning work is performed in the process chamber 100, by stopping the introduction of purge gas into each helium hole, the purge gas can be prevented from interfering with the subsequent work that may be performed in the process chamber 100. Specifically, by controlling the closure of the purge gas source, the purpose of stopping the introduction of purge gas into each helium hole can be achieved. Alternatively, by providing a valve or other device on the connecting pipeline 410, and by using the opening and closing of the valve, the purpose of controlling the opening and closing of the gas in each helium hole can also be achieved.

[0031] In the cleaning method of the metal etching equipment disclosed in the embodiment of the present application, in the process of introducing cleaning gas into the process chamber 100 to clean the by-products in the process chamber 100, the purge gas is also delivered to each helium hole through the purge gas source through the connecting pipe 410, so that under the action of the purge gas with positive pressure, the by-products under cleaning are prevented from being deposited in the helium holes of the carrier 200, thereby ensuring that the service life of the carrier 200 is relatively long. Correspondingly, after the cleaning process of the process chamber 100 is completed, in order to prevent the purge gas from having an adverse effect on the subsequent working process of the process chamber 100, that is, when the cleaning gas is stopped from being introduced into the process chamber 100, the purge gas is also controlled to stop being introduced into each helium hole.

[0032] In the above-mentioned embodiment of the present application, by introducing a cleaning gas into the process chamber 100 to clean the process chamber 100, a purge gas source is used to deliver a purge gas to each helium hole through the connecting pipe 410, thereby preventing the by-products in the process chamber 100 from being re-deposited in each helium hole of the carrier 200. Considering that during the operation of the metal etching equipment, the connecting pipe 410 is always connected to the process chamber 100 through the helium hole of the carrier 200, and thus during the operation of the metal etching equipment, process gases and the like may still flow into the connecting pipe 410. In this case, before the process chamber 100 is cleaned, if there are non-cleaning gases such as process gases and interfering gases other than purge gases remaining in the connecting pipe 410, as the purge gas is introduced through the helium holes, the aforementioned interfering gases will also be blown into the process chamber 100. Under the influence of electric fields and the like, the interfering gases may react with the cleaning gases or by-products to form deposits that are difficult to be extracted out of the process chamber 100, thereby causing the process chamber 100 to still be unable to be cleaned, which will have an adverse effect on subsequent process steps.

[0033] To this end, in another embodiment of the present application, the metal etching equipment also includes a negative pressure branch 420, one end of the negative pressure branch 420 is connected to the connecting pipe 410, and the other end of the negative pressure branch 420 is connected to the exhaust device 500, that is, the exhaust device 500 can be connected to the connecting pipe 410 through the negative pressure branch 420, so that when the exhaust device 500 is working, the process gas and other interfering gases that may remain in the connecting pipe 410 are extracted to ensure that the cleanliness of the connecting pipe 410 is relatively high before the purge gas is introduced.

[0034] Based on the metal etching equipment of the above structure, the above step S1 of the present application specifically includes:

[0035] S21, introducing cleaning gas into the process chamber 100, and controlling the exhaust device 500 to exhaust the gas in the first pipe section 411 between the purge gas source and the negative pressure branch 420 in the connecting pipe 410 through the negative pressure branch 420. When the above technical solution is adopted, it can be prevented that the residual gas in the connecting pipe 410 before the cleaning work is performed will not be sent into the process chamber 100, thereby ensuring that the cleaning work is relatively thorough.

[0036] Correspondingly, after the above S21, S1 further includes:

[0037] S22, after the exhaust device 500 works for the first preset time, the purge gas source is controlled to pass the purge gas to each helium hole through the connecting pipe 410, so as to ensure that the purge gas can provide positive pressure for each helium hole, prevent the byproducts in the cleaning process from being deposited in the helium hole, and ensure that the carrier 200 has a longer service life. Specifically, the first preset time can be flexibly determined according to actual conditions such as the flow rate of the connecting pipe 410 and the power of the exhaust device 500, and is not limited here.

[0038] In addition, after the vacuum device 500 has been working for the first preset period of time and the purge gas source is controlled to deliver the purge gas to each helium hole, the vacuum device 500 can be kept working according to actual conditions to achieve other functions or purposes; or, in order to ensure the delivery efficiency of the purge gas, the vacuum device 500 can also be turned off.

[0039] In the above step S21, since the connecting pipe 410 is connected between the helium hole and the purge gas source, the part of the connecting pipe 410 located at the helium hole and the negative pressure branch 420 (referred to as the second pipe section 412) can also be connected to the exhaust device 500 through the negative pressure branch 420. Furthermore, when the exhaust device 500 is working, the cleaning gas, by-products, etc. in the process chamber 100 can also be extracted from the helium hole through the second pipe section 412 by the exhaust device 500, which may also cause the by-products to adhere to and deposit on the hole wall of the helium hole, thereby adversely affecting the service life of the carrier 200.

[0040] Based on the above situation, in another embodiment of the present application, a first valve 330 is provided between the first pipe section 411 and the second pipe section 412. The first valve 330 may be a manual valve. In another embodiment of the present application, the first valve 330 may be an electrically controlled valve, which may reduce the control difficulty of the cleaning work. Furthermore, during the execution of the above S21, the first valve 330 may be controlled to be closed, so that the second pipe section 412 in the connecting pipeline 410 is no longer connected to the exhaust device 500, thereby preventing the cleaning gas and byproducts in the process chamber 100 from flowing into the second pipe section 412 through the helium hole, thereby ensuring that the service life of the carrier 200 is relatively long.

[0041] Accordingly, after the residual gas in the first pipe section 411 is extracted and the purge gas is delivered to the helium hole, that is, during the execution of the above-mentioned step S22, it is also necessary to control the first valve 330 to open accordingly to ensure that the purge gas source can be connected to the helium hole through the connecting pipe 410.

[0042] In addition, as described above, in the process of using the above-mentioned cleaning method to clean the process chamber 100, the exhaust mechanism in the process chamber 100 can be used to extract the by-products and the like in the process chamber 100 after cleaning. Furthermore, in the process of cleaning, the exhaust device 500 connected to the negative pressure branch 420 can be used to extract the residual gas in the second pipe section 412 in the connecting pipe 410, and the exhaust mechanism of the process chamber 100 can be used to extract the residual gas in the first pipe section 411 in the connecting pipe 410, thereby ensuring that the residual gas in the connecting pipe 410 will not have an adverse effect on the cleaning process of the process chamber 100.

[0043] Since it takes a certain amount of time for the purge gas to fill the connecting pipe 410, in order to improve the effect of the purge gas introduction, it is prevented that when the purge gas source is initially connected to the helium hole, the pressure in the connecting pipe 410 is relatively low, resulting in the cleaning gas and by-products in the process chamber 100 still being sucked into the connecting pipe 410 through the helium hole, causing the by-products to adhere to or deposit on the hole wall of the helium hole. Furthermore, in the case where the above-mentioned first valve 330 is provided, in the cleaning method disclosed in the embodiment of the present application, the above-mentioned step S22 includes:

[0044] S41, after the air extraction device 500 works for a second preset time, controlling the purge gas source to be connected to the first pipe section 411;

[0045] S42, after the purge gas source is connected to the first pipe section 411 for a third preset time, the first valve 330 is controlled to open to connect the first pipe section 411 with the second pipe section 412, and to introduce the purge gas into the helium hole.

[0046] That is, in the embodiment of the present application, the purge gas is first delivered to the first pipe section 411, and then after the third preset time, the purge gas is delivered to the second pipe section 412 to be delivered to each helium hole, so that the gas pressure in the first pipe section 411 is at least not relatively low, thereby greatly reducing the probability that the cleaning gas in the process chamber 100 is sucked into the connecting pipe 410. Specifically, the specific values ​​of the second preset time and the third preset time can be determined according to actual conditions, for example, the second preset time and the third preset time can both be 500 milliseconds.

[0047] In order to further improve the control accuracy of the purge gas in the helium holes, so as to ensure that the purge gas can prevent the by-products from being deposited in the helium holes and that the purge gas does not substantially interfere with the normal cleaning work in the process chamber 100, the amount of the purge gas delivered to the connecting pipe 410 can be controlled by using parameters such as the gas discharge volume of the purge gas source. In order to further improve the flow accuracy of the purge gas at each helium hole, each connecting pipe 410 is optionally provided with a pressure monitoring component 320, which can control the pressure of the gas in the connecting pipe 410 where it is located.

[0048] Based on this, the above step S1 may also include: controlling the pressure of each pressure monitoring component 320 to be a first preset pressure. That is, in the embodiment of the present application, by using the pressure monitoring component 320, the pressure of the gas in each connecting pipeline 410 can be accurately controlled, thereby improving the cleaning effect of the process chamber 100. Of course, the actual value of the first preset pressure can be flexibly determined according to the specific situation, and when the number of helium holes and connecting pipelines 410 is multiple and one-to-one corresponding, the pressure control values ​​of each pressure monitoring component 320 can be the same or different, and this is not limited herein.

[0049] In the case where each connecting pipeline 410 is provided with a pressure monitoring component 320, the above step S2 further includes:

[0050] S61, control the pressure control value of each pressure monitoring component 320 to be a second preset pressure, which is less than the first preset pressure. Specifically, the second preset pressure can be 0, but due to the characteristics of the pressure monitoring component 320 itself, even if the pressure of the gas in the connecting pipeline where it is located is less than the first preset pressure, its own indication is still the first preset pressure. Furthermore, in order to prevent the last pressure control value of the pressure monitoring component from interfering with the next cleaning method, as described above, when the cleaning gas is stopped, the pressure control value of each pressure monitoring component 320 needs to be set to a second preset pressure that is less than the first preset pressure.

[0051] As described above, in order to prevent the residual gas that may exist in the connecting pipe 410 from adversely affecting the cleaning process of the process chamber 100, a negative pressure branch 420 is provided in the metal etching device disclosed in the embodiment of the present application. In order to prevent the external space from being connected to the process chamber 100 through the negative pressure branch 420, a relatively reliable sealing relationship can be formed between the exhaust device 500 and the negative pressure branch 420. In order to further improve the airtightness of the process chamber 100 and facilitate the control of the connection and disconnection between the exhaust device 500 and the connecting pipe 410 (and the process chamber 100), a second valve 340 can be provided on the negative pressure branch 420. When the second valve 340 is in a closed state, the connection between the process chamber 100 and the exhaust device 500 can be cut off.

[0052] During the etching process, the metal etching equipment also needs to use the pipeline to introduce helium into the process chamber 100 through the helium holes on the carrier 200 to adjust the temperature and other parameters of the workpiece to be etched carried on the carrier 200. Accordingly, the carrier 200 usually also applies adsorption force and other methods to enable the workpiece to be stably carried on the carrier 200, that is, the thrust of the helium introduced through the helium holes on the workpiece to be etched during the etching process can be overcome by other reverse forces such as the adsorption force provided by the carrier 200.

[0053] Based on this, in order to reduce the control difficulty of the cleaning method disclosed in the embodiment of the present application, when the cleaning work of the process chamber 100 is completed and it is necessary to stop supplying the purge gas to the helium hole, it is also possible to judge whether the pressure of the purge gas supplied to the helium hole during the cleaning work will interfere with the normal loading of the etched part on the carrier 200, and thus judge the magnitude of the pressure of the gas in the connecting pipe 410 to determine the specific exhaust method of the purge gas in the connecting pipe 410 accordingly.

[0054] To elaborate, when the first preset pressure of the purge gas in the connecting pipe 410 is relatively large, if the first preset pressure exceeds the pressure of the helium gas entering the helium hole through the connecting pipe 410 when the metal etching equipment performs the etching process, and the purge gas source continues to deliver the purge gas to the connecting pipe 410, it will cause the exhaust equipment connected to the connecting pipe 410 through the negative pressure branch to be unable to effectively extract the purge gas in the connecting pipe 410 to the outside of the connecting pipe.

[0055] Based on the above situation, the above step S61 may include:

[0056] S71. Stop introducing the cleaning gas, and when the first preset pressure is less than or equal to the pressure of the helium gas introduced into the connecting pipeline when the metal etching equipment performs the etching process, control the pressure control value of each pressure monitoring component 320 to be a second preset pressure to stop introducing the purge gas into each helium hole.

[0057] In the case where the metal etching equipment includes the negative pressure branch 420, when the process chamber 100 is cleaning, the exhaust device 500 and the second valve 340 can remain in an open state. In this case, if the first preset pressure is relatively small, the amount of the purge gas delivered to the connecting pipeline by the purge gas source can be controlled by the pressure monitoring component, specifically, the purge gas delivered to the connecting pipeline by the purge gas source can be reduced to the greatest extent, and then the exhaust device can gradually extract the purge gas in the connecting pipeline to the outside of the connecting pipeline through the negative pressure branch.

[0058] Accordingly, the above step S61 further includes:

[0059] S72. After the fourth preset time, the purge gas source is controlled to be disconnected from the connecting pipeline 410, and the first valve 330 and the second valve 340 are controlled to be closed, so as to fundamentally stop the purge gas source from continuing to deliver the purge gas to the connecting pipeline, and prevent the internal space of the process chamber 100 from being connected to the outside of the process chamber 100 through the connecting pipeline 410 and the negative pressure branch 420, thereby adversely affecting the process environment in the process chamber 100. In this technical solution, the working states of the purge gas source, the first valve and the second valve can be controlled at the same time, thereby reducing the control difficulty of the entire work process while ensuring that the purge gas in the connecting pipeline can be basically evacuated. Specifically, the fourth preset time can be flexibly selected according to actual conditions, and is not limited here.

[0060] Affected by various factors, during the cleaning process of the metal etching equipment, it is possible that the first preset pressure of the pressure monitoring component 320 is greater than the pressure of the helium gas introduced into the helium hole through the connecting pipe 410 when the metal etching equipment performs the etching process. In this case, since the pressure of the purge gas in the connecting pipe 410 is relatively large, in order to ensure that the purge gas in the connecting pipe 410 of the etching equipment after the cleaning work is completed can be effectively extracted, in the process of using the exhaust device 500 to extract the remaining purge gas in the connecting pipe 410, when or after controlling the purge gas source to be disconnected from the connecting pipe 410, the pressure control values ​​of each pressure monitoring component 320 can be controlled to be the second preset pressure to ensure that the efficiency and effect of the exhaust device in extracting the purge gas in the connecting pipe are relatively good.

[0061] As described above, during the cleaning process, the purge gas is delivered to each helium hole through the purge gas source via the connecting pipe 410. In order to prevent the metal etching equipment from alarming due to the relatively large flow of the purge gas, which leads to the inability to carry out the cleaning work normally, in the embodiment of the present application, the above step S1 also includes: controlling the flow monitoring of the purge gas source to be turned off, that is, during the cleaning process, by turning off the flow monitoring of the purge gas source, it is possible to prevent the normal progress of the cleaning work from being affected by the excessive flow of the purge gas source.

[0062] It should be noted that, in this article, the terms "comprise", "include" or any other variant thereof are intended to cover non-exclusive inclusion, so that the process, method, article or device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise one..." do not exclude the presence of other identical elements in the process, method, article or device including the element. In addition, it should be pointed out that the scope of the methods and devices in the embodiments of the present application is not limited to performing functions in the order shown or discussed, and may also include performing functions in a substantially simultaneous manner or in reverse order according to the functions involved, for example, the described method may be performed in an order different from that described, and various steps may also be added, omitted, or combined. In addition, the features described with reference to certain examples may be combined in other examples.

[0063] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. A method for cleaning a metal etching device, characterized in that: The metal etching equipment comprises a process chamber and a carrier installed in the process chamber, the carrier is provided with at least one helium hole, and each of the helium holes is connected to a purge gas source through a connecting pipeline; the cleaning method comprises: Introducing a cleaning gas into the process chamber, and controlling the purge gas source to introduce the purge gas into each of the helium holes through the connecting pipeline; The cleaning gas is stopped from being introduced into the process chamber, and the purge gas is controlled to be stopped from being introduced into each of the helium holes.

2. The cleaning method according to claim 1, characterized in that: The metal etching device further comprises a negative pressure branch, one end of which is connected to the connecting pipe, and the other end of which is connected to the exhaust device; The step of introducing a cleaning gas into the process chamber and controlling the purge gas source to introduce the purge gas into each of the helium holes through the connecting pipeline comprises: Introducing a cleaning gas into the process chamber, and controlling the exhaust device to exhaust the gas in the first pipe section between the purge gas source and the negative pressure branch in the connecting pipe through the negative pressure branch; After the vacuum device works for a first preset time, the purge gas source is controlled to pass the purge gas into each of the helium holes through the connecting pipeline.

3. The cleaning method according to claim 2, characterized in that: The portion of the communicating pipeline between the helium hole and the negative pressure branch is a second pipe section, and a first valve is provided between the first pipe section and the second pipe section; The method of introducing a cleaning gas into the process chamber and controlling the exhaust device to exhaust the gas in the first pipe section between the purge gas source and the negative pressure branch in the connecting pipe through the negative pressure branch also includes: Controlling the first valve to close; After the vacuum device has been operating for a first preset time, controlling the purge gas source to pass the purge gas into each of the helium holes through the connecting pipeline, further comprising: The first valve is controlled to open.

4. The cleaning method according to claim 3, characterized in that: After the vacuum device has been operating for a first preset time, controlling the purge gas source to pass the purge gas into each of the helium holes through the connecting pipeline comprises: After the air extraction device operates for a second preset time, controlling the purge gas source to be connected to the first pipe section; After the purge gas source is connected to the first pipe section for a third preset time, the first valve is controlled to open to connect the first pipe section and the second pipe section, and purge gas is introduced into each of the helium holes.

5. The cleaning method according to claim 3, characterized in that: Each of the connecting pipelines is provided with a pressure monitoring component, and the pressure monitoring component is used to control the pressure of the gas in the corresponding connecting pipeline; The method of introducing a cleaning gas into the process chamber and controlling the purge gas source to introduce the purge gas into each of the helium holes through the connecting pipeline further includes: The pressure control value of each of the pressure monitoring components is controlled to be a first preset pressure.

6. The cleaning method according to claim 5, characterized in that: The step of stopping the introduction of the cleaning gas into the process chamber and controlling the stopping of the introduction of the purge gas into each of the helium holes further includes: The cleaning gas is stopped from being introduced, and the pressure control value of each pressure monitoring component is controlled to be a second preset pressure, so as to control the cessation of the introduction of the purge gas into each helium hole, wherein the second preset pressure is less than the first preset pressure.

7. The cleaning method according to claim 6, characterized in that: The negative pressure branch is provided with a second valve; The step of stopping the introduction of the cleaning gas and controlling the pressure control value of each of the pressure monitoring components to be a second preset pressure, so as to stop the introduction of the purge gas into each of the helium holes, comprises: Stop introducing the cleaning gas, and when the first preset pressure is less than or equal to the pressure of the helium gas introduced into the connecting pipeline when the metal etching equipment performs an etching process, control the pressure control value of each pressure monitoring component to be the second preset pressure, so as to stop introducing the purge gas into each helium hole; After a fourth preset time period, the purge gas source is controlled to be disconnected from the connecting pipeline, and the first valve and the second valve are controlled to be closed.

8. The cleaning method according to claim 6, characterized in that: The step of stopping the introduction of the cleaning gas and controlling the pressure control value of each of the pressure monitoring components to be a second preset pressure, so as to stop the introduction of the purge gas into each of the helium holes, further comprises: Stop introducing the cleaning gas, and when the first preset pressure is less than or equal to the pressure of the helium gas introduced into the connecting pipeline when the metal etching equipment performs an etching process, control the purge gas source to be disconnected from the connecting pipeline, and control the pressure control value of each of the pressure monitoring components to be the second preset pressure, so as to stop introducing the purge gas into each of the helium holes; After a fourth preset time period, the first valve and the second valve are controlled to be closed.

9. The cleaning method according to claim 1, characterized in that: The method of introducing a cleaning gas into the process chamber and controlling the purge gas source to introduce the purge gas into each of the helium holes through the connecting pipeline further includes: The flow monitoring of the purge gas source is controlled to be closed.

10. The cleaning method according to claim 1, characterized in that: The purge gas is an inert gas.

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