Vacuum coating equipment, conductive film preparation method, conductive film and pole piece

Abstract

The invention discloses vacuum coating equipment, a conductive film preparation method, a conductive film and a pole piece, the vacuum coating equipment comprises an equipment body, an evaporation component and a magnetron sputtering component, a vacuum cabin is arranged in the equipment body, and the vacuum cabin comprises a first cabin and a second cabin which are arranged in a separated mode; a membrane penetrating gap is formed in the side wall between the first cabin and the second cabin and is communicated with the first cabin and the second cabin; the evaporation component is mounted in the first cabin and is at least used for plating metal main body layers on the two opposite surfaces of the conductive film; and the magnetron sputtering assembly is mounted in the second cabin and is used for plating an isolating layer on the surface of the metal main body layer on one surface of the conductive film. The invention solves the problems of low plating efficiency and influence on the film forming quality of a copper film on a conductive film when the conductive film with an anti-sticking function is plated by adopting the existing film plating equipment.

Description

Technical Field

[0001] The present application relates to the field of thin film technology, and in particular to a vacuum coating device, a conductive film preparation method, a conductive film and a pole piece. Background Art

[0002] Conductive film is a thin film structure with a metal film layer plated on the surface of a polymer substrate. It is widely used in lithium-ion batteries and is mainly used as a battery current collector in lithium-ion batteries. After the conductive film obtained by copper plating on both sides of the polymer base film is rolled up and unrolled, the copper films on the two sides of the conductive film are prone to sticking to each other or sticking to the film, resulting in adhesion failure of the film layer during the unwinding process of the conductive film roll, resulting in delamination defects, that is, the copper layer on the surface of the base film is partially or sporadically detached, which seriously affects the quality of the conductive film.

[0003] In order to prevent the copper films on the two opposite sides of the conductive film from sticking to each other, it is desired to set a functional layer on the surface of at least one side of the conductive film to prevent the copper films from sticking to each other. However, if the existing coating equipment is used to coat the conductive film with anti-sticking function, not only is the coating efficiency low, but it also affects the film formation quality of the copper film on the conductive film. Summary of the invention

[0004] The main purpose of the present application is to provide a vacuum coating equipment, a conductive film preparation method, a conductive film and a pole piece, so as to solve the problem mentioned in the background technology that the use of existing coating equipment to coat a conductive film with an anti-sticking function not only has low coating efficiency, but also affects the film formation quality of the copper film on the conductive film.

[0005] According to a first aspect of the present application, a vacuum coating device is provided, comprising:

[0006] An equipment body, wherein a vacuum chamber is arranged in the equipment body, wherein the vacuum chamber comprises a first chamber and a second chamber which are separated from each other, wherein a transmembrane slit is arranged on a side wall between the first chamber and the second chamber, and the transmembrane slit communicates the first chamber and the second chamber;

[0007] An evaporation assembly, the evaporation assembly is installed in the first chamber, and the evaporation assembly is at least used to plate a metal main layer on two opposite sides of the conductive film;

[0008] A magnetron sputtering assembly is installed in the second chamber, and is used to plate an isolation layer on the surface of the metal main layer on one side of the conductive film.

[0009] Furthermore, the evaporation assembly comprises:

[0010] a first evaporation component, the first evaporation component comprising a first cold roller and a first evaporator, the first evaporator being located on one side of the first cold roller along its radial direction;

[0011] The second evaporation component comprises a second cold roller and a second evaporator, and the second evaporator is located on one side of the second cold roller along its radial direction.

[0012] Furthermore, the magnetron sputtering assembly comprises:

[0013] a third cold roller, the third cold roller being installed in the second cabin;

[0014] A magnetron sputtering device is provided on one side of the third cold roller along its radial direction.

[0015] Further, the transmembrane slit includes a first transmembrane slit and a second transmembrane slit, and the vacuum chamber further includes:

[0016] The third cabin is arranged between the first cabin and the second cabin, the first transmembrane slit is arranged on the side wall of the third cabin close to the second cabin and is connected with the second cabin, and the second transmembrane slit is arranged on the side wall of the third cabin away from the second cabin and is connected with the first cabin.

[0017] Furthermore, the volume of the second chamber is smaller than the volume of the third chamber, and the second chamber is located in the third chamber.

[0018] Furthermore, the volume of the second chamber is greater than the volume of the third chamber, and the third chamber is arranged on the outer side wall of the second chamber.

[0019] Furthermore, the volume of the second chamber and the volume of the third chamber are both smaller than the volume of the first chamber, and the second chamber and the third chamber are both located in the first chamber and spaced apart from the evaporation assembly.

[0020] Furthermore, the transmembrane slit further includes a third transmembrane slit, and the vacuum chamber further includes:

[0021] The fourth cabin is arranged adjacent to the first cabin, the third transmembrane slit is arranged on the side wall of the fourth cabin close to the first cabin and is connected with the first cabin, the volume of the second cabin and the volume of the third cabin are both smaller than the volume of the fourth cabin, the second cabin and the third cabin are both located in the fourth cabin, and the second transmembrane slit is connected with the fourth cabin.

[0022] Furthermore, it also includes:

[0023] an unwinding assembly, the unwinding assembly being installed in the first cabin or the second cabin; and / or,

[0024] A winding assembly is installed in the second chamber, or the winding assembly is installed in the vacuum chamber but is misplaced in the second chamber.

[0025] According to a second aspect of the present application, a method for preparing a conductive film is provided. The method for preparing a conductive film is performed by the vacuum coating device. The method for preparing a conductive film comprises:

[0026] Unwinding the substrate layer to the evaporation assembly in the first chamber, so as to plate the metal main layer on two opposite sides of the substrate layer along its thickness direction by the evaporation assembly using a thermal evaporation process;

[0027] The substrate layer is transferred along the transmembrane gap to the magnetron sputtering assembly in the second chamber, so that an isolation layer is plated on the surface of the metal main layer on one side of the substrate layer by the magnetron sputtering assembly using a magnetron sputtering process to form an anti-sticking conductive film.

[0028] Furthermore, the method further comprises: using the magnetron sputtering process by the magnetron sputtering assembly, before coating the isolation layer on the surface of the metal main layer away from the substrate layer to form the anti-adhesion conductive film.

[0029] The air pressure in the second chamber, at least at the transmembrane gap, is adjusted to be less than the air pressure in the first chamber.

[0030] Furthermore, the metal main layer includes a first metal layer and a second metal layer, and the steps of coating the metal main layer on two opposite sides of the substrate layer along its thickness direction by the evaporation assembly using a thermal evaporation process include:

[0031] The substrate layer is transferred to a first cold roller, so as to obtain the first metal layer by evaporating one side of the substrate layer along its thickness direction through a first evaporator;

[0032] The substrate layer is transferred from the first cold roller to a second cold roller, so as to obtain the second metal layer by vapor deposition on the other side of the substrate layer along its thickness direction through a second vapor deposition device.

[0033] Furthermore, the isolation layer includes a metal oxide layer, and the step of plating the isolation layer on the surface of the metal main layer away from the substrate layer by using the magnetron sputtering process through the magnetron sputtering assembly also includes:

[0034] The magnetron sputtering assembly adopts a magnetron sputtering process to sputter metal oxide particles from a metal oxide target material, so that the metal oxide particles are deposited on the surface of the metal main layer to form the metal oxide layer.

[0035] Furthermore, the metal oxide layer includes a copper oxide layer, and the step of plating an isolation layer on a surface of the metal main layer away from the substrate layer by using the magnetron sputtering process through the magnetron sputtering assembly also includes:

[0036] The magnetron sputtering assembly adopts a magnetron sputtering process to sputter copper oxide particles from a copper oxide target material, so that the copper oxide particles are deposited on the surface of the metal main layer to form the copper oxide layer.

[0037] According to a third aspect of the present application, a conductive film is provided. The conductive film is prepared by the vacuum coating device, or the conductive film is prepared by the conductive film preparation method, and the conductive film comprises:

[0038] A substrate layer, along a first direction, the substrate layer comprises a first surface and a second surface;

[0039] a first metal layer, the first metal layer being disposed on the first surface;

[0040] a second metal layer, the second metal layer being disposed on the second surface;

[0041] An isolation layer is disposed on surfaces of the first metal layer and the second metal layer away from the substrate layer, and the isolation layer includes a metal oxide layer.

[0042] Further, the metal oxide layer includes at least one of a titanium oxide layer, a copper oxide layer, and an aluminum oxide layer; and / or, along the first direction, the thickness of the metal oxide layer is between 0.5 nm and 10 nm.

[0043] According to a fourth aspect of the present application, a pole piece is provided, the pole piece comprising a current collector, and the current collector comprises the conductive film provided in the third aspect of the present application.

[0044] The vacuum coating equipment in the present application includes an equipment body, an evaporation component and a magnetron sputtering component. A vacuum chamber is arranged in the equipment body. The vacuum chamber includes a first chamber and a second chamber that are separated. A film-penetrating gap is arranged on the side wall between the first chamber and the second chamber. The film-penetrating gap connects the first chamber and the second chamber so that the substrate layer of the conductive film can be passed between the first chamber and the second chamber. The evaporation component is installed in the first chamber to evaporate a metal main layer on the substrate layer through the evaporation component in the first chamber. The magnetron sputtering component is installed in the second chamber to plate an isolation layer on the surface of the metal main layer away from the substrate layer through the magnetron sputtering component in the second chamber. The isolation layer can isolate the metal main layers on the opposite sides of the conductive film. When the wound conductive film is unwound, the metal main layers on the opposite sides of the conductive film will not detach from the substrate layer, that is, there will be no delamination defects on the surface of the conductive film, thereby improving the quality of the finished product of the conductive film.

[0045] That is to say, the present application can utilize the vacuum coating equipment to first evaporate the metal main layer in the first chamber using the evaporation assembly, and then transfer the conductive film to the second chamber to coat the isolation layer on the surface of the metal main layer through the magnetron sputtering assembly. Since the thermal evaporation process performed by the evaporation assembly is more efficient in processing the metal main layer that focuses on conductivity, and the magnetron sputtering process performed by the magnetron sputtering assembly controls the composition, thickness and uniformity of the functional layer such as the isolation layer more accurately, the evaporation assembly and the magnetron sputtering assembly are combined to coat and obtain a conductive film with an anti-sticking effect, which can ensure the high quality of the conductive film while achieving the best balance between cost and efficiency. At the same time, since the evaporation assembly and the magnetron sputtering assembly are located in different chambers, the two chambers are connected only by a film-penetrating gap, and the gas released by the magnetron sputtering assembly during the working process is not easy to run to the first chamber to affect the coating efficiency and quality of the evaporation assembly, so as to improve the film quality and efficiency of the metal main layer obtained by coating under the thermal evaporation process in the process of coating the conductive film in combination with the thermal evaporation process and the magnetron sputtering process. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0047] Figure 1 A schematic structural diagram of a vacuum coating device provided by an embodiment of the present invention;

[0048] Figure 2 It is a schematic diagram of the structure of the vacuum coating equipment including the third chamber;

[0049] Figure 3 It is a structural schematic diagram of the vacuum coating equipment when the second chamber and the third chamber are both located in the first chamber;

[0050] Figure 4 It is a schematic diagram of the structure of the vacuum coating equipment including the fourth chamber;

[0051] Figure 5 A schematic diagram of a process for preparing a conductive film according to an embodiment of the present invention;

[0052] Figure 6 A schematic structural diagram of a conductive film provided in one embodiment of the present invention.

[0053] The above drawings include the following reference numerals:

[0054] 10. Equipment body; 11. First cabin; 12. Second cabin; 121. Film-penetrating gap; 13. Third cabin; 14. Fourth cabin; 20. Evaporation assembly; 21. First evaporation component; 211. First cold roller; 212. First evaporator; 22. Second evaporation component; 221. Second cold roller; 222. Second evaporator; 30. Magnetron sputtering assembly; 31. Third cold roller; 32. Magnetron sputtering; 40. Unwinding assembly; 50. Winding assembly; 60. Conveying roller; 70. Conductive film; 71. Substrate layer; 711. First surface; 712. Second surface; 72. First metal layer; 73. Second metal layer; 74. Isolation layer; 75. Adhesion enhancing layer. DETAILED DESCRIPTION

[0055] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0056] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.

[0057] Unless otherwise specifically stated, the relative arrangement, numerical expressions and numerical values ​​of the parts and steps set forth in these embodiments do not limit the scope of the present application. At the same time, it should be understood that, for ease of description, the sizes of the various parts shown in the accompanying drawings are not drawn according to the actual proportional relationship. The technology, methods and equipment known to those of ordinary skill in the relevant art may not be discussed in detail, but in appropriate cases, the technology, methods and equipment should be considered as a part of the authorization specification. In all examples shown and discussed here, any specific value should be interpreted as being merely exemplary, rather than as a limitation. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters represent similar items in the following drawings, and therefore, once a certain item is defined in an accompanying drawing, it does not need to be further discussed in subsequent drawings.

[0058] In order to solve the problem that the existing coating equipment is used to coat the conductive film 70 with anti-sticking function, not only the coating efficiency is low, but also the film quality of the copper film on the conductive film 70 is affected. A first embodiment of the present invention provides a vacuum coating equipment, which includes an equipment body 10, an evaporation assembly 20 and a magnetron sputtering assembly 30.

[0059] See also Figures 1 to 4 , a vacuum chamber is arranged in the device body 10, and the vacuum chamber includes a first chamber 11 and a second chamber 12 which are separated, and a through-film gap 121 is arranged on the side wall between the first chamber 11 and the second chamber 12, and the through-film gap 121 connects the first chamber 11 and the second chamber 12. The evaporation assembly 20 is installed in the first chamber 11, and the evaporation assembly 20 is at least used to plate a metal main layer on two opposite sides of the conductive film 70. The magnetron sputtering assembly 30 is installed in the second chamber 12, and the magnetron sputtering assembly 30 is used to plate an isolation layer 74 on the surface of the metal main layer on one side of the conductive film. In this embodiment, after the metal main layer is plated on the surface of the substrate layer 71 of the conductive film 70 by the evaporation assembly 20 in the first chamber 11, the substrate layer 71 is transferred to the second chamber 12, so that the isolation layer 74 is plated on the surface of the metal main layer by the magnetron sputtering assembly 30. In this embodiment, the isolation layer 74 deposited by the magnetron sputtering assembly 30 may include at least one of a zinc layer, a tin layer, a nickel-chromium alloy layer (NiCr), a boron trioxide layer, a copper oxide layer, and the like.

[0060] Since the higher the vacuum degree in the first chamber 11, the better the evaporation effect of the evaporation assembly 20, if oxygen enters the first chamber 11, it will not only reduce the vacuum degree of the first chamber 11, but also, in the presence of oxygen, during the process of the evaporation assembly 20 evaporating a metal main layer (such as a copper film layer) on the surface of the substrate layer 71, metal oxides (such as copper oxide) will be produced at the evaporation liquid surface on the evaporator of the evaporation assembly 20. These metal oxides are equivalent to impurities added to the metal main layer, causing unstable evaporation of the evaporation source, thereby reducing the film quality of the metal main layer plated by the evaporation assembly 20. If argon gas enters the first chamber 11, the vacuum degree of the first chamber 11 will be reduced, and if the magnetron sputtering section contains an oxygen atmosphere that enters the first chamber 11, the metal main layer will be oxidized during the deposition process. At this time, during the Brownian motion of the metal atoms evaporated from the evaporation component 20 before being deposited on the surface of the substrate layer 71, the metal atoms will collide with the argon gas, and the kinetic energy of the metal atoms after the collision will be reduced. This will not only make it difficult for the metal atoms to deposit a metal main layer on the substrate layer 71, thereby reducing the evaporation efficiency of the evaporation component 20 and the film forming efficiency of the metal main layer, but also the metal dust formed by the metal atoms with reduced kinetic energy will fall onto the evaporation component 20 and the devices around the evaporation component 20, causing pollution to the vacuum coating equipment.

[0061] In this embodiment, the first chamber 11 and the second chamber 12 are connected via a transmembrane gap 121, and the transmembrane gap 121 is only for the conductive film 70 to pass through. This can prevent argon, oxygen and other gases in the magnetron sputtering component 30 in the second chamber 12 from entering the first chamber 11 and affecting the evaporation effect and efficiency of the evaporation component 20.

[0062] It can be seen that the vacuum coating device in this embodiment includes a device body 10, an evaporation assembly 20 and a magnetron sputtering assembly 30. A vacuum chamber is arranged in the device body 10. The vacuum chamber includes a first chamber 11 and a second chamber 12 which are separated. A through-film slit 121 is arranged on the side wall between the first chamber 11 and the second chamber 12. The through-film slit 121 connects the first chamber 11 and the second chamber 12 so that the substrate layer 71 of the conductive film 70 can be arranged between the first chamber 11 and the second chamber 12. The evaporation assembly 20 is installed in the first chamber 11 so as to evaporate a metal main body layer on the substrate layer 71 through the evaporation assembly 20 in the first chamber 11. The magnetron sputtering assembly 30 is installed in the second chamber 12, so that an isolation layer 74 is plated on the surface of the metal main layer away from the substrate layer 71 in the second chamber 12 through the magnetron sputtering assembly 30. The isolation layer 74 can isolate the metal main layers on two opposite sides of the conductive film 70. When the wound conductive film 70 is unwound, the metal main layers on two opposite sides of the conductive film 70 will not separate from the substrate layer 71, that is, no delamination defects will appear on the surface of the conductive film 70, thereby improving the quality of the finished product of the conductive film 70.

[0063] That is to say, in this embodiment, the vacuum coating equipment can be used to firstly evaporate the metal main layer in the first chamber 11 using the evaporation assembly 20, and then the conductive film 70 can be transferred to the second chamber 12 to coat the isolation layer 74 on the surface of the metal main layer through the magnetron sputtering assembly 30. Since the thermal evaporation process performed by the evaporation assembly 20 is more efficient in processing the metal main layer that focuses on conductivity, and the magnetron sputtering process performed by the magnetron sputtering assembly 30 controls the composition, thickness and uniformity of the functional layer such as the isolation layer 74 more accurately, the evaporation assembly 20 and the magnetron sputtering assembly 30 are combined to coat the conductive film 70 with an anti-sticking effect, which can ensure the high quality of the conductive film 70 while achieving the best balance between cost and efficiency. At the same time, since the evaporation component 20 and the magnetron sputtering component 30 are located in different chambers, the two chambers are connected only by the membrane-penetrating gap 121. The gas released by the magnetron sputtering component 30 during operation is not easy to escape to the first chamber 11 to affect the coating efficiency of the evaporation component 20 and the film-forming quality of the metal main layer. In the process of coating the conductive film 70 by combining the thermal evaporation process and the magnetron sputtering process, the film-forming quality and efficiency of the metal main layer obtained by coating under the thermal evaporation process are improved.

[0064] The evaporation assembly 20 in this embodiment includes a first evaporation component 21 and a second evaporation component 22. The first evaporation component 21 includes a first cold roller 211 and a first evaporator 212. The first evaporator 212 is located on one side of the first cold roller 211 along its own radial direction. In the process of the substrate layer 71 of the conductive film 70 passing through the first cold roller 211, a metal main layer satisfying the conductive performance is evaporated onto one of the surfaces of the substrate layer 71 along its own thickness direction by the first evaporator 212. The second evaporation component 22 includes a second cold roller 221 and a second evaporator 222, and the second evaporator 222 is located on one side of the second cold roller 221 along its own radial direction. In the process of the substrate layer 71 passing through the second cold roller 221, a metal main layer satisfying the conductive performance is evaporated onto the other surface of the substrate layer 71 along its own thickness direction by the second evaporator 222. That is, in this embodiment, the substrate layer 71 can be unwound sequentially to the first evaporator 212 and the second evaporator 222 of the first chamber 11, so that the metal main layer can be efficiently plated on two opposite sides of the substrate layer 71 along its thickness direction by the first evaporator 212 and the second evaporator 222. Moreover, since the gas in the second chamber 12 is not easy to enter the first chamber 11 and cause adverse effects on the evaporation coating of the first evaporator 212 and the second evaporator 222, the film formation quality of the metal main layer is guaranteed.

[0065] At the same time, in order to further prevent the argon gas in the magnetron sputtering assembly 30 in the second chamber 12 from affecting the evaporation efficiency and coating effect of the evaporation assembly, the present embodiment requires that the transmembrane slit 121 be set at a position far away from the first evaporation component 21 and the second evaporation component 22. For example, at least one of the first evaporator 212 and the second evaporator 222 is located at the position farthest from the transmembrane slit 121 in the first chamber 11, especially once the size of the first chamber 11 is determined, considering the gravity of the side wall between the first chamber 11 and the second chamber 12, in principle, the transmembrane slit 121 opened on the side wall between the first chamber 11 and the second chamber 12 is located at the upper position of the side wall away from the ground, thereby reducing the influence of the argon gas in the second chamber 12 on the evaporation assembly 20.

[0066] Of course, in order to realize the transfer of the substrate layer 71 from the first evaporator 212 to the second evaporator 222, and then transfer the substrate layer 71 from the second evaporator 222 to the magnetron sputtering assembly 30 of the second chamber 12, the vacuum coating equipment provided in this embodiment also includes a transmission assembly. The transmission assembly may include a plurality of transmission rollers 60, and the transmission rollers 60 include a passing roller and / or a pressing roller. In this regard, in this embodiment, a plurality of passing rollers and / or a pressing roller may be installed between the first evaporation component 21 and the second evaporation component 22, so as to transfer the substrate layer 71 from the first evaporation component 21 to the second evaporation component 22 through the plurality of passing rollers and / or a pressing roller. In this embodiment, one or more transmission rollers 60 are also respectively arranged between the second evaporation component 22 and the second chamber 12, and between the film-penetrating slit 121 and the magnetron sputtering assembly 30, so as to transfer the substrate layer 71 coated with the metal main layer along the film-penetrating slit 121 to the magnetron sputtering assembly 30 of the second chamber 12 through one or more transmission rollers 60.

[0067] like Figures 1 to 4 As shown, the magnetron sputtering assembly 30 in this embodiment includes a third cold roller 31 and a magnetron sputtering device 32, and the third cold roller 31 is installed in the second chamber 12. The magnetron sputtering device 32 is arranged on one side of the third cold roller 31 along its own radial direction, so that the metal particles sputtered by the metal target material are deposited on the surface of the metal main layer through the magnetron sputtering device 32 to form an isolation layer 74. Therefore, in this embodiment, after the metal main layer is plated on the opposite sides of the substrate layer 71 by the first evaporation component 21 and the second evaporation component 22 in the first chamber 11, the substrate layer 71 is transferred to the third cold roller 31 in the second chamber 12 along the film-penetrating gap 121, and the isolation layer 74 is plated on the metal main layer on one surface of the substrate layer 71 by the magnetron sputtering device 32 at the third cold roller 31, thereby obtaining a conductive film 70 with an anti-sticking function, with high production efficiency and good film quality.

[0068] During operation of the magnetron sputtering device 32 in the second chamber 12, it is difficult for the gas generated to enter the first chamber 11 through the trans-membrane gap 121, especially when the air pressure in the second chamber 12 at least near the trans-membrane gap 121 is lower than the air pressure in the first chamber 11. This can prevent the gas from entering the first chamber 11 along the trans-membrane gap 121 and affecting the evaporation of the evaporation component 20, thereby ensuring the film formation quality of the metal main layer.

[0069] See also Figures 2 to 4 , the transmembrane gap 121 in this embodiment includes a first transmembrane gap and a second transmembrane gap, and the vacuum chamber also includes a third chamber 13. The third chamber 13 is arranged between the first chamber 11 and the second chamber 12, the first transmembrane gap is arranged on the side wall of the third chamber 13 close to the second chamber 12 and communicated with the second chamber 12, and the second transmembrane gap is arranged on the side wall of the third chamber 13 away from the second chamber 12 and communicated with the first chamber 11. It can be seen that in this embodiment, the third chamber 13 is also arranged between the first chamber 11 and the second chamber 12, and the third chamber 13 is respectively communicated with the second chamber 12 and the first chamber 11 through the first transmembrane gap and the second transmembrane gap. Therefore, during the operation of the magnetron sputtering assembly 30 in the second chamber 12, the third chamber 13 can further ensure that gases such as oxygen and argon generated in the second chamber 12 are not easy to enter the first chamber 11. Since the first chamber 11 and the second chamber 12 are separated by the third chamber 13, even if the gas in the second chamber 12 leaks along the first transmembrane gap, the third chamber 13 can store the leaked gas for a certain period of time, greatly reducing the risk of the gas entering the first chamber 11 along the second transmembrane gap.

[0070] Among them, this embodiment can make the air pressure of the third chamber 13 at least at the second transmembrane gap lower than the air pressure of the first chamber 11. Therefore, when the gas in the second chamber 12 leaks into the third chamber 13, it can be prevented from entering the first chamber 11 along the second transmembrane gap, thereby ensuring the evaporation efficiency and evaporation effect of the evaporation assembly 20 in the first chamber 11. The air pressure of the first chamber 11 at least at the first transmembrane gap is lower than the air pressure of the third chamber 13, thereby preventing the gas in the first chamber 11 from entering the third chamber 13 along the first transmembrane gap, further improving the sealing of the gas in the second chamber 12. In this embodiment, different vacuum pumps (such as vacuum pumps) can be used to perform vacuum operation on the first chamber 11 and the third chamber 13 to ensure that the air pressure of the third chamber 13 is greater than the air pressure of the second chamber 12 and less than the air pressure of the first chamber 11, thereby preventing the gas in the second chamber 12 from entering the first chamber 11.

[0071] In one embodiment of the present invention, the volume of the second chamber 12 is smaller than the volume of the third chamber 13, and the second chamber 12 is located inside the third chamber 13 (e.g. Figure 2At this time, the outer peripheral wall of the second chamber 12 is surrounded by the space in the third chamber 13, so that the risk of gas in the second chamber 12 leaking into the first chamber 11 along the transmembrane slit 121 can be reduced.

[0072] like Figure 3 and Figure 4 As shown, in another embodiment of the present invention, the volume of the second cabin 12 is greater than the volume of the third cabin 13, and the third cabin 13 is arranged on the outer side wall of the second cabin 12. In other words, the third cabin 13 is arranged on the outer side wall of the second cabin 12, and the two are connected through the first transmembrane gap. Thus, the first cabin 11 and the second cabin 12 are isolated by the third cabin 13, reducing the risk of gas in the second cabin 12 leaking into the first cabin 11.

[0073] like Figure 3 As shown, in another embodiment of the present invention, the volume of the second chamber 12 and the volume of the third chamber 13 are both smaller than the volume of the first chamber 11, and the second chamber 12 and the third chamber 13 are both located in the first chamber 11 and spaced apart from the evaporation assembly 20. That is to say, the second chamber 12 and the third chamber 13 are both located in the first chamber 11, and the second chamber 12 is separated from the first chamber 11 by the third chamber 13. This structure can not only reduce the risk of gas leakage in the second chamber 12 into the first chamber 11, but also increase the volume of the first chamber 11 when the volume of the vacuum coating equipment is constant, so that the first chamber 11 can have enough space to install the auxiliary devices (such as the transmission roller, the unwinding assembly 40 and / or the winding assembly 50) required for the coating process.

[0074] See also Figure 4 , the transmembrane gap 121 also includes a third transmembrane gap, and the vacuum chamber in the vacuum coating equipment also includes a fourth chamber 14. The fourth chamber 14 is arranged adjacent to the first chamber 11, and the third transmembrane gap is arranged on the side wall of the fourth chamber 14 close to the first chamber 11 and is connected to the first chamber 11. When the volume of the second chamber 12 and the volume of the third chamber 13 are both smaller than the volume of the fourth chamber 14, the second chamber 12 and the third chamber 13 are both located in the fourth chamber 14, and the second transmembrane gap is connected to the fourth chamber 14. That is to say, in this embodiment, while the first chamber 11 and the second chamber 12 are isolated by the third chamber 13, the second chamber 12 and the third chamber 13 are also isolated from the first chamber 11 by the fourth chamber 14, so as to further reduce the risk of the gas in the second chamber 12 entering the first chamber 11 through the fourth chamber 14.

[0075] In this embodiment, the air pressure in the fourth chamber 14 at least near the third transmembrane gap can be made lower than the air pressure in the first chamber 11, so that even if the gas in the second chamber 12 enters the fourth chamber 14 along the third chamber 13, the fourth chamber 14 can not only temporarily store the leaked gas, but also ensure that the gas does not enter the first chamber 11 along the third transmembrane gap. And / or, the air pressure in the third chamber 13 at least at the second transmembrane gap is lower than the air pressure in the fourth chamber 14, so that even if the gas in the second chamber 12 enters the third chamber 13, the third chamber 13 can not only temporarily store the leaked gas for a certain period of time, but also prevent the gas from entering the fourth chamber 14 along the second transmembrane gap, further improving the working stability and reliability of the evaporation assembly 20 in the first chamber 11.

[0076] The vacuum coating equipment in this embodiment also includes an unwinding assembly 40 and / or a winding assembly 50. The unwinding assembly 40 is installed in the first chamber 11 or in the second chamber 12. When the unwinding assembly 40 is installed in the first chamber 11, the unwinding assembly 40 can be specifically installed at a position close to the first evaporation component 21, so that the substrate layer 71 of the conductive film 70 is efficiently transferred to the first evaporation component 21 through the unwinding assembly 40 to start the coating of the metal main layer. In this embodiment, when the unwinding assembly 40 is installed in the second chamber 12, in order to avoid opening more film-penetrating slits 121 and increasing the risk of gas in the second chamber 12 entering the first chamber 11. In this embodiment, the unwinding assembly 40 can pass the unwound substrate layer 71 from the second chamber 12 to the first chamber 11 along the film-penetrating slits 121, and then transfer the substrate layer 71 to the evaporation assembly 20 through the conveying roller 60 to coat the metal main layer on both sides of the substrate layer 71. After the metal main layer is plated, the substrate layer 71 is inserted into the magnetron sputtering assembly 30 in the second chamber 12 along the same film-penetrating slit 121 to plate the isolation layer 74. This can not only improve the production efficiency of the conductive film 70, but also the substrate layer 71 is inserted between the second chamber 12 and the first chamber 11 through the same film-penetrating slit 121 before and after the metal main layer is plated, which can avoid the increased risk of gas leakage due to the additional film-penetrating slit 121 between the second chamber 12 and the first chamber 11, thereby ensuring the evaporation efficiency and evaporation effect of the evaporation assembly 20 in the first chamber 11. Moreover, in this embodiment, when the unwinding assembly 40 is preferably installed in the second chamber 12, the spatial volume of the first chamber 11 can be reduced, thereby improving the vacuuming efficiency of the vacuum pump when the vacuum pump performs a vacuuming operation on the first chamber 11, and ensuring that the evaporation assembly 20 efficiently performs the evaporation plating of the metal main layer in the first chamber 11 with a high vacuum degree.

[0077] The winding assembly 50 in this embodiment is installed in the second cabin 12. In this embodiment, when the winding assembly 50 is installed in the second cabin 12, the conductive film 70 coated with the isolation layer 74 can be wound up by the winding assembly 50. Or the winding assembly 50 is installed in the vacuum chamber but misplaced in the second cabin 12, that is, the winding assembly 50 is installed outside the second cabin 12. In this regard, it can be installed in the first cabin 11 or the third cabin 13 or the fourth cabin 14. At this time, this embodiment allows the conductive film 70 to pass through the film-penetrating slit 121 entering the second cabin 12 to the winding assembly 50 outside the second cabin 12. That is to say, before and after the isolation layer 74 is plated, the substrate layer 71 enters the second chamber 12 through the same transmembrane slit 121 or passes through the winding assembly 50 outside the second chamber 12, so as to avoid the risk of increasing gas leakage into the first chamber 11 due to the opening of an additional transmembrane slit 121 between the second chamber 12 and the first chamber 11, thereby ensuring the evaporation efficiency and evaporation effect of the evaporation assembly 20 in the first chamber 11.

[0078] The second embodiment of the present invention provides a method for preparing a conductive film, which is performed by a vacuum coating device. The structure of the vacuum coating device is specifically described in the first embodiment of the present invention. Figure 5 The conductive film preparation method in this embodiment includes the following steps:

[0079] Step S11 : unwinding the substrate layer 71 to the evaporation assembly 20 in the first chamber 11 , so as to plate a metal main layer on two opposite sides of the substrate layer 71 along its thickness direction by the evaporation assembly 20 using a thermal evaporation process.

[0080] Step S12: The substrate layer 71 is transferred to the magnetron sputtering assembly 30 in the second chamber 12 along the through-film gap 121, so that the isolation layer 74 is plated on the surface of the metal main layer on one side of the substrate layer 71 by the magnetron sputtering process through the magnetron sputtering assembly 30 to form an anti-adhesion conductive film 70. Since the second chamber 12 and the first chamber 11 are connected only through the through-film gap 121, the gas in the second chamber 12 is not easy to leak into the first chamber 11, thereby improving the evaporation efficiency and effect of the evaporation assembly 20 and ensuring the film formation quality of the metal main layer.

[0081] It can be seen that in this embodiment, the metal main layer can be evaporated by the evaporation assembly 20 in the first chamber 11, and then the conductive film 70 can be transferred to the second chamber 12 to plate the isolation layer 74 on the surface of the metal main layer through the magnetron sputtering assembly 30. Since the thermal evaporation process performed by the evaporation assembly 20 is more efficient when processing the metal main layer that focuses on conductivity, and the magnetron sputtering process performed by the magnetron sputtering assembly 30 controls the composition, thickness and uniformity of the functional layer such as the isolation layer 74 more accurately, therefore, in this embodiment, the evaporation assembly 20 and the magnetron sputtering assembly 30 are combined to obtain the conductive film 70 with an anti-sticking effect, which can not only ensure the high quality of the conductive film 70, but also achieve the best balance between cost and efficiency. At the same time, since the evaporation assembly 20 and the magnetron sputtering assembly 30 are located in different chambers, the two chambers are connected only by the film-penetrating gap 121, and the gas released by the magnetron sputtering assembly 30 during operation is not easy to run to the first chamber 11 to affect the coating efficiency of the evaporation assembly 20 and the film quality of the metal main layer.

[0082] Before forming the anti-adhesion conductive film 70 by plating the isolation layer 74 on the surface of the metal main layer away from the substrate layer 71 through the magnetron sputtering assembly and the magnetron sputtering process, the method provided in this embodiment further includes:

[0083] The air pressure in the second chamber 12 at least at the transmembrane gap is adjusted to be lower than the air pressure in the first chamber 11. Since the air pressure in the second chamber 12 at least at the transmembrane gap 121 is adjusted to be lower than the air pressure in the first chamber 11, the gas in the second chamber 12 will not leak into the first chamber 11, thereby improving the evaporation efficiency and effect of the evaporation assembly 20 and ensuring the film formation quality of the metal main layer.

[0084] That is to say, this embodiment ensures that the working process of the evaporation component 20 in the first chamber 11 will not be affected by the atmosphere in other chambers by making the pressure near the evaporation component 20 in the first chamber 11 higher than the pressure at the membrane gap, or the pressure in the first chamber 11 is in a positive pressure state relative to the second chamber 12.

[0085] The metal main layer in this embodiment includes a first metal layer 72 and a second metal layer 73. In step S12, the steps of coating the metal main layer on two opposite sides of the substrate layer 71 along its thickness direction by using the evaporation assembly 20 using a thermal evaporation process include:

[0086] Step S121 : conveying the substrate layer 71 to the first cold roller 211 , so as to obtain the first metal layer 72 by evaporating on one side of the substrate layer 71 along its thickness direction through the first evaporator 212 .

[0087] Step S122 : transferring the substrate layer 71 from the first cold roller 211 to the second cold roller 221 , so as to obtain a second metal layer 73 by vapor deposition on the other side of the substrate layer 71 along its thickness direction through the second vapor deposition device 222 .

[0088] In the first chamber 11 of the vacuum coating equipment, this embodiment can unwind the substrate layer 71 to the first evaporator 212 and the second evaporator 222 in sequence through the above steps S121 to S122, so that the first metal layer 72 is obtained by evaporating on one surface of the substrate layer 71 by the first evaporator 212, and the second metal layer 73 is obtained by evaporating on the other side of the substrate layer 71 by the second evaporator 222, so as to efficiently realize the double-sided coating of the substrate layer 71. Moreover, since the gas in the second chamber 12 is not easy to enter the first chamber 11, which has an adverse effect on the evaporation coating of the first evaporator 212 and the second evaporator 222, the film formation quality of the first metal layer 72 and the second metal layer 73 is guaranteed. It should be noted that in this embodiment, whether there are roller systems (such as cooling roller systems) or existing roller systems with other positions or other functions can be increased or decreased according to actual conditions, and this scheme does not make a sole limitation on this.

[0089] In step S12, the step of plating the isolation layer 74 on the surface of the metal main layer away from the substrate layer 71 by the magnetron sputtering assembly 30 using the magnetron sputtering process includes: transferring the substrate layer 71 from the second cold roller 221 along the film-penetrating slit 121 to the third cold roller 31 in the second chamber 12, so as to plate the isolation layer 74 on the surface of one of the first metal layer 72 and the second metal layer 73 away from the substrate layer 71 by the magnetron sputtering device 32. Therefore, in this embodiment, the substrate layer 71 is transferred from the first and second cold rollers in the first chamber 11 to the third cold roller 31 in the second chamber 12 along the film-penetrating slit 121, and the isolation layer 74 can be plated on a single side of the substrate layer 71. The isolation layer 74 can separate the first metal layer 72 and the second metal layer 73, so as to avoid the phenomenon of the first metal layer 72 and the second metal layer 73 sticking to each other after the conductive film 70 is rolled up and unrolled, thereby improving the finished product quality of the conductive film 70.

[0090] In a preferred embodiment of the present invention, the isolation layer 74 includes a metal oxide layer. In some embodiments of the present invention, in order to ensure that the isolation layer 74 does not affect the conductivity of the downstream products (such as the pole piece of the battery) prepared based on the conductive film 70, the isolation layer 74 can be removed before the conductive film 70 is electroplated and thickened. Although the isolation layer 74 in the present embodiment can also include a metal isolation layer or an alloy metal isolation layer whose material is different from the first metal layer 72 and the second metal, the metal oxide layer is easier to be dissolved and removed by the acid solution than the metal isolation layer or the alloy metal isolation layer, so it can avoid the material of the isolation layer 74 remaining on the conductive film 70, and improve the production quality of the subsequent process of the conductive film 70. Therefore, the most preferred isolation layer 74 deposited film layer is a copper oxide film layer, which will not cause pollution to the electroplating plating solution even after being dissolved.

[0091] In step S12, the step of plating the isolation layer 74 on the surface of the metal main layer away from the substrate layer 71 by the magnetron sputtering assembly 30 using the magnetron sputtering process also includes: sputtering metal oxide particles from the metal oxide target by the magnetron sputtering assembly 30 using the magnetron sputtering process, so that the metal oxide particles are deposited on the surface of the metal main layer to form a metal oxide layer. Since the present embodiment is based on the metal oxide particles sputtered from the metal oxide target, the metal oxide layer is obtained on the surface of the metal main layer (such as the first metal layer 72 or the second metal layer 73). In this process, there is no need to supply oxygen to the magnetron sputtering assembly 30, and the metal oxide layer can be plated only in an argon environment (oxygen-free environment). In this embodiment, the metal oxide layer is plated in an oxygen-free environment, which can avoid the situation in which the oxygen present when the metal oxide layer is plated leaks from the second chamber 12 to the first chamber 11 to affect the operation of the evaporation assembly 20 in the conventional metal target material + (argon Ar + oxygen O2) mode of the magnetron sputtering assembly 30, thereby avoiding the entry of oxygen into the first chamber 11 to cause difficulty in thermal evaporation when the evaporation assembly 20 in the first chamber 11 evaporates the metal main layer (such as a copper layer), thereby reducing the film quality of the metal main layer. This is because the higher the vacuum degree in the first chamber 11, the better the thermal evaporation efficiency and effect of the evaporation assembly 20. In this embodiment, the metal oxide target material is used to plate the metal oxide layer, which can avoid the presence of oxygen in the first chamber 11, thereby avoiding the obvious copper sputtering problem caused by the presence of oxygen in the evaporation process of the copper layer. The occurrence of the copper sputtering phenomenon is equivalent to the addition of copper oxide impurities into the original copper layer, resulting in unstable evaporation of the evaporation source and reducing the film quality of the copper layer.

[0092] Of course, the present embodiment can also deposit a metal film layer on the surface of the metal main layer by means of magnetron sputtering deposition, or can deposit a metal oxide film layer, wherein the metal oxide film layer can be directly deposited by a metal oxide target in an Ar atmosphere, or can be oxidatively deposited by a metal target in an Ar+O2 atmosphere. In order to absolutely eliminate the influence of the O2 atmosphere in the magnetron sputtering section, it is preferred to deposit metals that are not the main metal layer material or to deposit metal oxides in an oxygen-free atmosphere.

[0093] The metal oxide layer in this embodiment may specifically include at least one of a titanium oxide layer, a copper oxide layer, and an aluminum oxide layer. When the corresponding oxide layer is plated in the second chamber 12, a metal oxide ceramic target material of the corresponding oxide layer is specifically used. The plating of the corresponding oxide layer can be achieved in an oxygen-free environment, thereby avoiding difficulties in thermal evaporation of the evaporation component 20 in the first chamber 11 due to the presence of oxygen in the second chamber 12.

[0094] In a preferred embodiment of the present invention, the metal oxide layer includes a copper oxide layer. In step S12, the step of plating the isolation layer 74 on the surface of the metal main layer away from the substrate layer 71 by the magnetron sputtering assembly 30 using the magnetron sputtering process also includes: sputtering copper oxide particles from the copper oxide target by the magnetron sputtering assembly 30 using the magnetron sputtering process, so that the copper oxide particles are deposited on the surface of the metal main layer to form a copper oxide layer. Therefore, before the conductive film 70 in this embodiment enters the electroplating thickening process, if the isolation layer 74 needs to be removed, since the copper oxide layer is easily dissolved and removed by the acidic solution, it is possible to avoid the copper oxide layer material remaining on the conductive film 70. When the copper oxide layer is not completely removed or does not need to be removed from the conductive film 70, in the electroplating thickening stage (specifically, when a thicker copper layer is electroplated on the conductive film 70), since the copper oxide is dissolved by the electroplating solution, it will not bring impurities to the electroplating solution, and thus will not affect the film quality of the electroplating thickening layer (copper layer).

[0095] In step S12, after the isolation layer 74 is plated on the surface of the metal main layer away from the substrate layer 71, the method provided in this embodiment further includes: before the rolled conductive film 70 is subjected to a thickening treatment by an electroplating preparation process, the isolation layer 74 is removed. That is, in this embodiment, before the metal thickening layer is plated on the surface of the conductive film 70, the isolation layer 74 can be cleaned and removed, so as to prevent the isolation layer 74 from reducing the conductivity of the finished conductive film 70.

[0096] In the step of removing the isolation layer 74, the conductive film 70 can be unwound to a removal device, and the removal device includes a corrosion liquid tank. The corrosion liquid tank can contain a corrosion liquid for corroding and removing the isolation layer 74. In actual operation, the isolation layer 74 is contacted with the corrosion liquid to corrode the isolation layer 74. The corrosion liquid includes an acidic solution or an alkaline solution. Among them, the acidic corrosion liquid can be nitric acid or sulfuric acid, and the alkaline corrosion liquid can be sodium hydroxide solution. For example, when the isolation layer 74 in this embodiment includes an aluminum layer whose material is different from that of the metal main layer, the isolation layer 74 can be removed using an alkaline solution. When the isolation layer 74 is a boron trioxide layer, a zinc layer, or a tin layer, the boron trioxide layer, the zinc layer, and the tin layer can be removed using an acidic solution. Specifically, the type of corrosion liquid can be selected according to the chemical properties of the isolation layer 74.

[0097] When the isolation layer 74 in this embodiment is preferably a metal oxide layer, since the metal oxide layer can react with acid to generate salt and water, that is, the metal oxide layer can be removed by etching with an acidic solution, the acidic solution used to etch and remove the isolation layer 74 can be placed in the etching tank in this embodiment. In actual operation, the metal oxide layer can be etched away by contacting the metal oxide layer with the acidic solution in the etching tank.

[0098] In order to improve the vacuuming efficiency of the first chamber 11 and ensure that the evaporation assembly 20 in the first chamber 11 always performs efficient and high-quality plating of the metal main layer under high vacuum, when the unwinding assembly 40 is installed in the second chamber 12, the method provided in this embodiment further includes the following steps:

[0099] The substrate layer 71 is inserted into the first chamber 11 along the transmembrane gap 121 by the unwinding assembly 40 located in the second chamber 12 , and after the metal main layer is plated on the substrate layer 71 , it is inserted into the magnetron sputtering assembly 30 in the second chamber 12 again along the transmembrane gap 121 .

[0100] That is to say, the film-penetrating slit 121 through which the substrate layer 71 unwound by the unwinding assembly 40 enters the first chamber 11 from the second chamber 12 is the same as the film-penetrating slit 121 through which the substrate layer 71 passes after being plated with the metal main body layer in the first chamber 11 and then being passed back to the second chamber 12. Therefore, there is no need to open an additional film-penetrating slit 121 between the second chamber 12 and the first chamber 11 to increase the risk of gas leakage into the first chamber 11, thereby ensuring the evaporation efficiency and evaporation effect of the evaporation assembly 20 in the first chamber 11. Moreover, in this embodiment, when the unwinding assembly 40 is preferably installed in the second chamber 12, the spatial volume of the first chamber 11 can also be reduced, thereby improving the vacuuming efficiency of the vacuum pump when the vacuum pump performs a vacuuming operation on the first chamber 11, thereby ensuring a high vacuum degree of the first chamber 11.

[0101] In addition, the method provided in this embodiment also includes the following steps:

[0102] When the winding assembly 50 for winding the substrate layer 71 is located outside the second chamber 12, the conductive film 70 coated with the isolation layer 74 is passed through the through-film slit 121 to the winding assembly 50 outside the second chamber 12. That is to say, after the substrate layer 71 in this embodiment is passed through the through-film slit 121 from the first chamber 11 into the second chamber 12 and the isolation layer 74 is coated, it will be passed through the through-film slit 121 again to the winding assembly 50 outside the second chamber 12 (such as one of the first chamber 11, the third chamber 13, and the fourth chamber 14) to be wound up by the winding assembly 50. Therefore, there is no need to open other slits on the side wall of the first chamber 11 to transfer the conductive film 70 to the outside of the second chamber 12, which can reduce the risk of gas leakage in the second chamber 12 into the first chamber 11.

[0103] See also Figure 6 The third embodiment of the present invention provides a conductive film 70, which is prepared by the vacuum coating device provided by the first embodiment of the present invention, or the conductive film 70 is prepared by the conductive film preparation method provided by the second embodiment of the present invention. The conductive film 70 in this embodiment includes a substrate layer 71, a first metal layer 72, a second metal layer 73 and an isolation layer 74. Figure 6 The substrate layer 71 includes a first surface 711 and a second surface 712. The first metal layer 72 is disposed on the first surface 711. The second metal layer 73 is disposed on the second surface 712. The isolation layer 74 is disposed on the surface of the first metal layer 72 and the second metal layer 73 away from the substrate layer 71, and the isolation layer 74 includes a metal oxide layer. Before the conductive film 70 enters the electroplating thickening process, if the isolation layer 74 needs to be removed, since the metal oxide layer can be better corroded and removed by the acidic solution, it will not affect the conductive performance of the finished conductive film 70.

[0104] The metal oxide layer in this embodiment includes at least one of a titanium oxide layer, a copper oxide layer, and an aluminum oxide layer. The metal oxide layer in this embodiment is preferably a copper oxide layer, because the copper ions dissolved from the copper oxide layer during pickling in the electroplating tank will not affect the electroplating solution in the electroplating tank, thereby preventing the electroplated copper layer for thickening from being doped with impurities and not affecting the film-forming quality of the copper layer, thereby improving the electroplating efficiency and electroplating quality.

[0105] Along the first direction, the thickness of the metal oxide layer in this embodiment is between 0.5 nm and 10 nm. The thickness of the metal oxide layer may specifically include 0.5nm, 0.6nm, 0.7nm, 0.8nm, 0.9nm, 1nm, 1.2nm, 1.5nm, 1.7nm, 1.8nm, 2nm, 2.1nm, 2.3nm, 2.5nm, 2.7nm, 2.9nm, 3nm, 3.2nm, 3.5nm, 3.8nm, 4nm, 4.2nm, 4.3nm, 4.7nm, 5nm, 5.1nm, 5.4nm, 5.6nm, 5.8nm, 6nm, 6.1nm, 6.3nm, 6.5nm, 6.8nm, 7nm, 7.2nm, 7.4nm, 7.6nm, 7.7nm, 8nm, 8.2nm, 8.4nm, 8.6nm, 8.7nm, 9nm, 9.2nm, 9.4nm, 9.6nm, 9.8nm, 10nm and the like. When the thickness of the metal oxide layer in this embodiment is within the above-mentioned thickness range, it can not only ensure that the metal main body layers on the two opposite sides of the conductive film 70 will not stick to each other, but also ensure that the metal oxide layer will not affect the conductive performance of the finished conductive film 70 when the metal oxide layer remains in the finished conductive film 70. When the metal oxide layer needs to be removed by etching with an etching solution, it will not be difficult to remove it completely because the thickness of the metal oxide layer is too thick.

[0106] The conductive film 70 in this embodiment may also include an adhesion enhancement layer 75, which is arranged between the metal main body layer and the substrate layer 71. Specifically, an adhesion enhancement layer 75 is arranged between the first metal layer 72 and the substrate layer 71, and between the second metal layer 73 and the substrate layer 71. The adhesion enhancement layer 75 can improve the adhesion of the first metal layer 72 and the second metal layer 73 to the substrate layer 71, that is, it enhances the interface bonding force F1 between the metal layer and the substrate layer 71, so that the interface bonding force F1 between the metal layer and the substrate layer 71 is greater than the bonding force F2 between the first metal layer 72 and the second metal layer 73, thereby preventing the film layer on one side of the conductive film 70 from being pulled off by the other side. In addition, the first metal layer 72 and the second metal layer 73 are separated by the isolation layer 74, which greatly weakens the bonding force F2, so that the adhesion between the first metal layer 72 and the second metal layer 73 during the winding process of the conductive film 70 is smaller, thereby preventing the first metal layer 72 and the second metal layer 73 from sticking to each other.

[0107] The adhesion enhancing layer 75 in this embodiment may include any one of a copper alloy layer, a nickel alloy layer, a titanium alloy layer, an aluminum alloy layer, an aluminum oxide layer, a silicon nitride layer, a silicon carbide layer, a polyethylene glycol layer, and the like.

[0108] In addition, when the isolation layer 74 in this embodiment is preferably a metal oxide layer, a metal isolation layer or a metal alloy isolation layer whose relative material is different from the metal main layer has a better anti-sticking effect between the metal main layers on the opposite sides of the conductive film 70.

[0109] In this embodiment, any isolation material of the isolation layer 74 different from the metal main layer can play an isolation effect. For example, compared with no isolation layer 74, that is, no magnetron sputtering coating layer in this technical solution, on the conductive film 70 without the isolation layer 74, 100 cm 2 The number of light-transmitting points within the area may reach 500. After a certain thickness of isolation layer 74 is applied on the conductive film 70, the number of light-transmitting points within the area (e.g., 100 cm 2 The number of translucent points within the area may be in the single digit or close to zero.

[0110] When the metal oxide is preferably used in this embodiment, it is mainly because the metal oxide is easily removed by pickling during acid plating. From the perspective of composition, the metal oxide does not affect the thickness of the electroplating agent (a separate pickling tank can be used before formal plating). When copper oxide is further preferably used for the isolation layer 74, the conductive film 70 plated with copper oxide can be directly transferred into the acid plating agent. The acid in the acid plating agent can directly corrode the copper oxide, and the copper ions finally formed will not have a negative impact on the electroplating effect even if they enter the electroplating agent.

[0111] The fourth embodiment of the present invention provides a pole piece, which includes a current collector, and the current collector includes the conductive film 70 provided in the third embodiment of the present application. For the specific structure of the conductive film 70, please refer to the content provided in the third embodiment of the present invention, and this embodiment will not be repeated here.

[0112] A fifth embodiment of the present invention provides an energy storage device, which includes a battery, a battery pack, etc. The energy storage device includes the pole piece provided by the fourth embodiment of the present invention.

[0113] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used here to describe the spatial positional relationship between a device or feature and other devices or features as shown in the figure. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figure. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" can include both "above" and "below". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used here are interpreted accordingly.

[0114] In addition, it should be noted that the use of terms such as "first" and "second" to limit components is only for the convenience of distinguishing the corresponding components. Unless otherwise stated, the above terms have no special meaning and therefore cannot be understood as limiting the scope of protection of this application.

[0115] The above are only preferred embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A vacuum coating device, characterized in that: include: A device body (10), wherein a vacuum chamber is arranged in the device body (10), wherein the vacuum chamber comprises a first chamber (11) and a second chamber (12) which are separated from each other, wherein a transmembrane slit (121) is arranged on a side wall between the first chamber (11) and the second chamber (12), and wherein the transmembrane slit (121) communicates with the first chamber (11) and the second chamber (12); A vapor deposition component (20), the vapor deposition component (20) being installed in the first chamber (11), the vapor deposition component (20) being used at least to deposit a metal main body layer on two opposite sides of the conductive film (70); A magnetron sputtering assembly (30) is installed in the second chamber (12), and the magnetron sputtering assembly (30) is used to plate an isolation layer (74) on the surface of the metal main layer on one side of the conductive film (70).

2. The vacuum coating equipment according to claim 1, characterized in that: The evaporation assembly (20) comprises: A first evaporation component (21), the first evaporation component (21) comprising a first cold roller (211) and a first evaporator (212), the first evaporator (212) being located on one side of the first cold roller (211) along its radial direction; The second evaporation component (22) comprises a second cold roller (221) and a second evaporator (222), and the second evaporator (222) is located on one side of the second cold roller (221) along its own radial direction.

3. The vacuum coating equipment according to claim 1 or 2, characterized in that: The magnetron sputtering assembly (30) comprises: a third cold roller (31), the third cold roller (31) being installed in the second cabin (12); A magnetron sputtering device (32), wherein the magnetron sputtering device (32) is arranged on one side of the third cold roller (31) along its own radial direction.

4. The vacuum coating equipment according to claim 1, characterized in that: The transmembrane slit (121) comprises a first transmembrane slit and a second transmembrane slit, and the vacuum chamber further comprises: A third cabin (13), wherein the third cabin (13) is arranged between the first cabin (11) and the second cabin (12), the first transmembrane slit is arranged on the side wall of the third cabin (13) close to the second cabin (12) and is communicated with the second cabin (12), and the second transmembrane slit is arranged on the side wall of the third cabin (13) away from the second cabin (12) and is communicated with the first cabin (11).

5. The vacuum coating equipment according to claim 4, characterized in that: The volume of the second chamber (12) is smaller than the volume of the third chamber (13), and the second chamber (12) is located inside the third chamber (13).

6. The vacuum coating equipment according to claim 4, characterized in that: The volume of the second chamber (12) is greater than the volume of the third chamber (13), and the third chamber (13) is arranged on the outer side wall of the second chamber (12).

7. The vacuum coating equipment according to claim 6, characterized in that: The volume of the second chamber (12) and the volume of the third chamber (13) are both smaller than the volume of the first chamber (11), and the second chamber (12) and the third chamber (13) are both located in the first chamber (11) and spaced apart from the evaporation assembly (20).

8. The vacuum coating equipment according to claim 7, characterized in that: The transmembrane slit (121) further includes a third transmembrane slit, and the vacuum chamber further includes: A fourth chamber (14), wherein the fourth chamber (14) is arranged adjacent to the first chamber (11), the third transmembrane slit is arranged on the side wall of the fourth chamber (14) close to the first chamber (11) and is communicated with the first chamber (11), the volume of the second chamber (12) and the volume of the third chamber (13) are both smaller than the volume of the fourth chamber (14), the second chamber (12) and the third chamber (13) are both located in the fourth chamber (14), and the second transmembrane slit is communicated with the fourth chamber (14).

9. The vacuum coating equipment according to any one of claims 1 to 2 or 4 to 8, characterized in that: Also includes: an unwinding assembly (40), the unwinding assembly (40) being installed in the first compartment (11) or in the second compartment (12); and / or, A winding assembly (50), wherein the winding assembly (50) is installed in the second chamber (12), or the winding assembly (50) is installed in the vacuum chamber but is misplaced in the second chamber (12).

10. A method for preparing a conductive film, characterized in that: The conductive film preparation method is performed by the vacuum coating equipment according to any one of claims 1 to 9, and the conductive film preparation method comprises: Unwinding the substrate layer (71) to the evaporation assembly (20) in the first chamber (11), so as to plate a metal main body layer on two opposite sides of the substrate layer (71) along its thickness direction by means of a thermal evaporation process by the evaporation assembly (20); The substrate layer (71) is transferred along the transmembrane gap (121) to the magnetron sputtering assembly (30) in the second chamber (12), so that an isolation layer (74) is plated on the surface of the metal main layer on one side of the substrate layer (71) by the magnetron sputtering process through the magnetron sputtering assembly (30) to form an anti-sticking conductive film (70).

11. The method for preparing a conductive film according to claim 10, characterized in that: Using the magnetron sputtering process by the magnetron sputtering assembly (30), before coating an isolation layer (74) on a surface of the metal main layer away from the substrate layer (71) to form an anti-adhesion conductive film (70), the method further comprises: The air pressure in the second chamber (12), at least at the transmembrane gap (121), is adjusted to be lower than the air pressure in the first chamber (11).

12. The method for preparing a conductive film according to claim 10, characterized in that: The metal main layer comprises a first metal layer (72) and a second metal layer (73), and the steps of plating the metal main layer on two opposite sides of the substrate layer (71) along its thickness direction by using the evaporation component (20) and a thermal evaporation process include: The substrate layer (71) is transferred to a first cold roller (211) so as to obtain the first metal layer (72) by vapor deposition on one side of the substrate layer (71) along its thickness direction through a first vapor deposition device (212); The substrate layer (71) is transferred from the first cold roller (211) to the second cold roller (221) so as to obtain the second metal layer (73) by vapor deposition on the other side of the substrate layer (71) along its thickness direction through a second vapor deposition device (222).

13. The method for preparing a conductive film according to any one of claims 10 to 12, characterized in that: The isolation layer (74) comprises a metal oxide layer, and the step of plating the isolation layer (74) on the surface of the metal main layer away from the substrate layer (71) by using the magnetron sputtering process through the magnetron sputtering assembly (30) further comprises: The magnetron sputtering assembly (30) uses a magnetron sputtering process to sputter metal oxide particles from a metal oxide target material, so that the metal oxide particles are deposited on the surface of the metal main layer to form the metal oxide layer.

14. The method for preparing a conductive film according to claim 13, characterized in that: The metal oxide layer comprises a copper oxide layer, and the step of plating an isolation layer (74) on a surface of the metal main layer away from the substrate layer (71) by using the magnetron sputtering process through the magnetron sputtering assembly (30) further comprises: The magnetron sputtering assembly (30) uses a magnetron sputtering process to sputter copper oxide particles from a copper oxide target material, so that the copper oxide particles are deposited on the surface of the metal main layer to form the copper oxide layer.

15. A conductive film, characterized in that: The conductive film (70) is prepared by the vacuum coating device according to any one of claims 1 to 9, or the conductive film (70) is prepared by the conductive film preparation method according to any one of claims 10 to 14, and the conductive film (70) comprises: A substrate layer (71), along a first direction, the substrate layer (71) comprises a first surface (711) and a second surface (712); A first metal layer (72), the first metal layer (72) being disposed on the first surface (711); A second metal layer (73), wherein the second metal layer (73) is disposed on the second surface (712); An isolation layer (74), wherein the isolation layer (74) is disposed on a surface of the first metal layer (72) and the second metal layer (73) away from the substrate layer (71), and the isolation layer (74) comprises a metal oxide layer.

16. A pole piece, characterized in that: The pole piece includes a current collector, and the current collector includes the conductive film (70) according to claim 15.

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