Photoetching image correction method and device based on OPC technology and storage medium

Abstract

The scheme provided by the embodiment of the invention provides a photoetching image correction method and device based on an OPC (Optical Proximity Correction) technology and a storage medium. The method comprises the following steps: simulating different cross-layer exposure processes of a wafer through a photoetching imaging model, and obtaining a prediction result of a photoetching image of each layer of material; taking the target layout as the input of a photoetching imaging model, carrying out OPC correction, correcting a prediction result, and outputting a corrected Mask layout file; checking items are set through OPC verify, pixel point EPE checking is conducted on the corrected Mask layout file, accuracy checking is conducted on the corrected Mask layout file, and the optimally corrected Mask layout file is output. The technical problems that how to reduce CD Loss and how to effectively reduce the Shot risk caused by a manual correction mode are effectively solved.

Description

Technical Field

[0001] The present application belongs to the field of OPC technology in the FPD industry, and in particular to a photolithography image correction method, device and storage medium based on OPC technology. Background Art

[0002] With the continuous development of economic globalization, market competition is becoming increasingly fierce. According to CINNO Research statistics, in the third quarter of 2023, the proportion of domestic AMOLED panels used in major domestic brands of AMOLED smartphones in the global market has reached nearly 86%, with a strong growth momentum. In this environment, if panel manufacturers want to increase production capacity, they can only improve the yield of products from the technical end.

[0003] From micrometers to nanometers, light interference and diffraction will occur during the exposure process, causing the design graphics to be distorted during transfer. Before this, panel factories did not introduce OPC correction technology, and mainly used manual correction methods. After the design graphics were manually corrected, they were sent to the Mask shop and waited for the Mask to be made and returned to the factory. Online exposure measures whether the CD size of the key position meets the requirements. If not, it is necessary to return to the design graphics for secondary correction based on the measurement value, and repeat the above process until the CD size meets the requirements. At the same time, as customer designs become more and more complex, and the panel factory process is simpler than the IC end, after the front layer is completed, no flat layer is made, and the next layer is made directly. This leads to the problem of ups and downs when the current layer is made, resulting in more and more serious CD Loss at the cross-line, and the risk of Short is increasing, which brings greater challenges to panel ACD engineers, and CD is more difficult to be accurate, which seriously affects the yield of the product.

[0004] Therefore, a method to effectively reduce CD Loss needs to be proposed. Summary of the invention

[0005] The present application provides a lithography image correction method, device and storage medium based on OPC technology, which effectively solves the technical problem of how to reduce CD Loss and effectively reduce the short risk caused by manual correction methods.

[0006] The solutions provided in this application are as follows:

[0007] This embodiment introduces a photolithography image correction method based on OPC technology, including:

[0008] The lithography imaging model simulates the different cross-layer exposure processes of the wafer to obtain the predicted results of the lithography image of each layer of material;

[0009] Use the target layout as the input of the lithography imaging model, perform OPC correction, correct the prediction results, and output the corrected Mask layout file;

[0010] Through OPC verify, check items are set up to perform pixel EPE check on the corrected Mask layout file and check the accuracy of the corrected Mask, and output the optimal corrected Mask layout file.

[0011] Optionally, the lithography imaging model includes: an Abbe imaging model and a Hopkins spatial imaging optical model;

[0012] And the photoresist model composed of reaction rate equation and diffusion equation.

[0013] Optionally, the lithography imaging model simulates different cross-layer exposure processes of the wafer to obtain prediction results of the lithography image of each layer of material, including:

[0014] Set the film stack information, light source file, and mask information in the lithography imaging model. The film stack information includes multiple key parameters such as the refractive index and thickness of each layer of material, the light source file includes multiple key parameters such as the wavelength and intensity distribution of the light source, and the mask information includes multiple key parameters such as the mask pattern and material type.

[0015] Simulate the light propagation and imaging quality of metal or non-metal layers, and output the predicted results of the lithography image of each layer of material.

[0016] Optionally, the Topography models generated by each layer prediction under different cross-line conditions are combined to form the OPC Topography model of the layer.

[0017] Optionally, the lithography imaging model is supervised by cross-line and non-cross-line metrology data.

[0018] Optionally, before supervising the lithography imaging model through cross-line and non-cross-line metrology data, including:

[0019] Perform data preprocessing on the cross-line and non-cross-line measurement data to obtain preprocessed data;

[0020] And convert the preprocessed data into gauge format data.

[0021] Optionally, the target layout is used as the input of the lithography imaging model, OPC correction is performed, the prediction result is corrected, and the corrected Mask layout file is output, including:

[0022] Identify the input target layout;

[0023] Divide the edge of the target layout into multiple segments, and make predictions based on the position coordinates, CD values, and process conditions of each point to obtain prediction results, where the prediction results are the outline of the target layout;

[0024] By measuring the distance between the predicted result and the target layout, the accuracy of the OPC correction result can be determined;

[0025] After multiple iterations, the distance between the prediction result and the target layout is adjusted, and a corrected Mask layout file that meets the design requirements is output.

[0026] The present application also provides a lithography image correction device based on OPC technology, comprising:

[0027] A modeling module is used to simulate different cross-layer exposure processes of the wafer through a lithography imaging model to obtain the prediction results of the lithography image of each layer of material;

[0028] The correction module is used to use the target layout as the input of the lithography imaging model, perform OPC correction, correct the prediction results, and output the corrected Mask layout file;

[0029] The inspection module sets up inspection items through OPC verify, performs pixel EPE inspection on the modified Mask layout file and accuracy inspection on the modified Mask;

[0030] The output module is used to output the optimally corrected Mask layout file.

[0031] The present application also provides a computer-readable storage medium, which stores a computer program. When the computer program is executed by a processor, a lithography image correction method based on the OPC technology as described in any one of the above embodiments is implemented.

[0032] The beneficial effects of this application are:

[0033] Improve precision: OPC technology can significantly improve the precision of lithography, making the actual lithographic pattern closer to the ideal pattern.

[0034] Reduce fluctuations: Predicting and controlling process fluctuations through lithography imaging models and combining them with OPC technology can reduce the CD loss of simulated graphics and improve chip yield and performance.

[0035] Reduce costs: OPC technology can reduce chip scrapping and rework costs caused by poor lithography, thereby reducing overall production costs.

[0036] Reduce errors: Establish a Topography model, use model base opc instead of rule base opc, solve the short problem caused by manual correction, improve product yield, and increase product competitiveness. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 A step diagram of a lithography image correction method based on OPC technology provided in this application;

[0038] Figure 2 A wafer process profile structure provided in this application;

[0039] Figure 3 A schematic diagram of exposure of a photolithography machine provided in this application;

[0040] Figure 4 A schematic diagram of an OPC Topography model combination provided for this application;

[0041] Figure 5 A schematic diagram of OPC correction & verification provided for this application;

[0042] Figure 6 A schematic diagram of a lithography image correction device based on OPC technology provided in this application. DETAILED DESCRIPTION

[0043] The following will be combined with the drawings in the embodiments of the present application to clearly describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments in the present application belong to the scope of protection of this application.

[0044] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.

[0045] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

[0046] It should be noted that the traditional Rule-Based OPC-based lithography image correction method uses a pre-established graphic correction rule library to correct the mask graphic by looking up the table. It is simple and easy, but has limited accuracy and is difficult to cope with complex graphics and process changes.

[0047] The present application proposes a lithography image correction method based on Model-Based OPC, which uses a lithography imaging model (mainly including an optical model and a photoresist model) to model the OPC problem and convert it into a mathematical optimization problem, and optimizes the structure and pattern of the mask in combination with an algorithm. It can accurately predict various physical and chemical effects in the lithography process, and optimize the mask design through an iterative algorithm to achieve higher lithography accuracy. This embodiment introduces a lithography image correction method based on OPC technology, such as Figure 1 As shown, it mainly includes S1-S3. It should be noted that the lithography image correction method based on OPC technology provided in this application mainly includes S1-S3, but is not limited to steps S1-S3.

[0048] S1: The different cross-layer exposure processes of the wafer are simulated by the lithography imaging model to obtain the predicted results of the lithography image of each layer of material.

[0049] In one embodiment, the lithography imaging model can simulate the physical and chemical processes in the lithography process, including the diffraction and scattering of light, and the interaction between the mask and the wafer, and generate an accurate Topography model for different layers of materials. Based on the Topography model, the predicted results of the lithography images of each layer of material formed after the exposure and development of the photoresist are extracted. The predicted results here are the contours of the target layout on each layer of material. The target layout is used as the input of the model, the corresponding computing environment is loaded, and the different cross-layer exposure processes of the wafer are simulated. The pattern shape and size formed by different mask patterns on the wafer can be predicted, thereby providing the necessary simulation data for OPC.

[0050] S2: Use the target layout as the input of the lithography imaging model, perform OPC correction, correct the prediction results, and output the corrected Mask layout file.

[0051] In one embodiment, by using the target layout as the input of the trained lithography imaging model, the target layout describes in detail the shape and size of the pattern expected after exposure. After the edges of the target layout graphics are cut into segments, the lithography imaging model performs OPC correction on it, sets a checkpoint for each line segment at a specific position, checks the deviation between the predicted result and the target result at that position, i.e., EPE (edge ​​placement error), and corrects the predicted result based on the obtained EPE. Specifically, iterative calculations are started according to the preset model, and the outline of a graphic is redrawn each iteration. In each iteration, the algorithm predicts the morphology after exposure through the model based on the current Mask design, and compares it with the target layout. Through continuous comparison and correction, the algorithm will gradually adjust the design of the Mask so that its morphology after exposure is closer to the target layout, that is, the OPC correction first ensures that the image size of the predicted result meets the image design size requirements. This process requires multiple iterations, and each iteration will be optimized based on the previous prediction results until a Mask is generated whose morphology is highly consistent with the original input Target layout after model simulation, and finally the corrected Mask layout file is output.

[0052] S3: Set up inspection items through OPC verify, perform pixel EPE inspection on the corrected Mask layout file and check the accuracy of the corrected Mask, and output the optimal corrected layout file.

[0053] In one embodiment, the OPC-corrected Mask layout, the established OPC topography model, and the target layout are used as inputs, and the predicted contour of the mask is obtained through model simulation, which is further compared with the target layout to obtain the EPE value of each predicted pixel point, and the inspection items are output in a table form. The EPE inspection of each pixel point is more comprehensive and detailed than the OPC correction that only checks the EPE of some points of each line segment. At the same time, inspection items are set up according to the Mask rule, and the corrected Mask layout is checked to confirm that it meets the Mask shop production specifications. Check whether the EPE and other inspection items meet the requirements, and whether the Mask rule meets the requirements. When both meet the requirements at the same time, the optimal corrected Mask layout is finally output.

[0054] Optionally, the lithography imaging model includes: an Abbe imaging model and a Hopkins spatial imaging optical model;

[0055] And the photoresist model composed of reaction rate equation and diffusion equation.

[0056] In one embodiment, the lithography imaging model mainly relies on accurate optical models and photoresist models.

[0057] Among them, the optical model is used to calculate the imaging of light on the wafer after it passes through the projection lens during the lithography process. This includes considering physical phenomena such as diffraction and interference of light. When constructing an optical model, it is necessary to input the parameters of the projection lens, the parameters of the light source (such as wavelength, intensity distribution, etc.) and the pattern information on the mask. The main setting parameters are: Projection lens parameters: This includes the focal length, numerical aperture, aberration, etc. of the lens. These parameters determine the lens's ability to focus and image light. Light source parameters: The wavelength, intensity distribution, coherence and other characteristics of the light source have an important influence on the imaging quality. Mask pattern information: The pattern information on the mask determines the shape of the pattern on the final wafer. This information is usually input into the model in digital form to calculate the diffraction and interference effects of light after it passes through the mask. Commonly used optical models can use the Abbe imaging principle, the Hopkins spatial image model, etc. In the Abbe model, the distribution of light emitted by the light source on the object plane (mask) can be regarded as an ideal one-dimensional or two-dimensional figure, which is equivalent to a transmission function for the light source. After light is diffracted from the object (mask), it passes through the lens system and forms a diffraction pattern on the image plane. The Hopkins spatial imaging optical model is another important computational lithography model. Compared with the Abbe model, the Hopkins model focuses more on describing the propagation and diffraction process of light in space, as well as the impact of these processes on the imaging results.

[0058] In the Hopkins model, the diffraction fields of plane waves incident on the mask at different angles are the same after passing through the mask, except that the coordinates of light of different diffraction orders are offset on the wide pupil surface. The offset depends on the structure of the mask and the angle of the incident light. The core of the Hopkins model is "spectral translation invariance", which makes the function of the optical system and the function representing the mask independent, thereby reducing the amount of calculation and increasing the calculation speed.

[0059] Photoresist model: used to describe the absorption, reflection, transmission of light by photoresist, as well as the acid-base neutralization reaction and diffusion effect that occur during the development process.

[0060] This includes parameters such as the sensitivity, contrast, and resolution of the photoresist, which will affect the morphological changes of the photoresist after exposure. Usually it involves reaction rate equations, diffusion equations, etc. Its main parameters are: Absorption coefficient: describes the photoresist's ability to absorb light. Reaction rate equation: describes the rate of chemical reactions that occur in the photoresist after exposure. Diffusion equation: describes the diffusion process of chemical substances in the photoresist. These equations are usually related to parameters such as the sensitivity, contrast, and resolution of the photoresist.

[0061] This application is based on realizing the prediction function of Model-Based OPC, establishing an accurate mathematical model, designing an efficient prediction algorithm, realizing the integration and configuration of the prediction function, and continuously monitoring and optimizing the performance of the OPC system.

[0062] Optionally, the lithography imaging model is supervised by cross-line and non-cross-line metrology data.

[0063] Optionally, before supervising the lithography imaging model through cross-line and non-cross-line metrology data, including:

[0064] Perform data preprocessing on the cross-line and non-cross-line measurement data to obtain preprocessed data;

[0065] And convert the preprocessed data into gauge format data.

[0066] In one embodiment, before constructing the lithography imaging model, a large amount of experimental data is required to supervise the model training. Based on the structure of the wafer, taking a layer as an example, the measurement data of the layer after exposure is collected. The measurement data needs to include as many environments as possible for the current layer, such as the measurement data at both the cross-line and non-cross-line locations. Figure 2 As shown, there are three types of data in the current layer, which are not across layers, across film1, and across flim1 and film2. When there is no cross-layer, PR (photoresist). This is a key material used in the photolithography process, mainly used to transfer circuit patterns to silicon wafers or other substrates through photolithography technology in the process of semiconductor or integrated circuit manufacturing. Photoresist can react sensitively to light, form the required circuit pattern after exposure, and serve as a mask for subsequent etching or deposition processes. Therefore, photoresist plays a vital role in microelectronics and integrated circuit manufacturing. When PR is applied to the "wafer" or "chip", the position that does not cross the layer is in the valley, so the PR glue will flow down under the stress, forming a certain degree of depression. Similarly, there will be a certain degree of depression after the cross-film1 and cross-flim1 and flim2 photoresists are applied. These depressions will affect the shape of the pattern presented on the wafer after the light passes through the lens and is projected onto the PR. To this end, it is necessary to collect a large amount of actual measurement data to train the model and improve the accuracy of the model.

[0067] Generally, high-precision equipment such as scanning electron microscope (SEM) can be used to measure the exposed pattern and obtain the CD value. Measurement execution: According to the preset sampling strategy, select representative positions on the wafer for measurement. Record the coordinates, CD value and other relevant measurement data (such as environmental factors such as temperature and humidity) of each measurement point.

[0068] The measurement data is preprocessed as follows: Data cleaning: remove outliers; check and remove abnormal measurement data caused by equipment failure, operating errors, etc.; Data consistency check: ensure that the format and unit of all measurement data are consistent. Data conversion: convert the original measurement data into the gauge format required for modeling.

[0069] Optionally, the lithography imaging model simulates different cross-layer exposure processes of the wafer to obtain prediction results of the lithography image of each layer of material, including:

[0070] Set the film stack information, light source file, and mask information in the lithography imaging model. The film stack information includes multiple key parameters such as the refractive index and thickness of each layer of material, the light source file includes multiple key parameters such as the wavelength and intensity distribution of the light source, and the mask information includes multiple key parameters such as the mask pattern and material type.

[0071] Simulate the light propagation and imaging quality of metal or non-metal layers, and output the predicted results of the lithography image of each layer of material.

[0072] In one embodiment, by Figure 3 It can be seen that when the software simulates exposure, there will be two planes. Focus is the optical focusing plane at the physical level. After the light passes through the lens and is projected onto the PR, it converges to a point, and the plane where the point is located is the optical focusing plane. In reality, after the light hits the photoresist, the light will be refracted, and in some cases, there will be bottom layer reflection. After exposure and development, the actual imaging plane is the actual focusing plane simulated by the software. Therefore, based on the actual online measurement data, a photolithography imaging model is established to generate an OPC Topography model ("topography model" or "topology model") to simulate the exposure performance of the current layer under different cross-layer conditions, providing accurate predictions for subsequent similar products.

[0073] To this end, the lithography imaging model is required to comprehensively organize and analyze the film stack, light source file, and mask information. The film stack information includes key parameters such as the refractive index and thickness of each layer of material, which will directly affect the light propagation and imaging quality during the lithography process. The light source file provides detailed information such as the wavelength and intensity distribution of the light source, which is crucial for simulating light propagation during the lithography process. At the same time, it is also necessary to have an in-depth understanding of the mask information, including the mask pattern, material type, etc.

[0074] After collating and analyzing this information, the layers need to be divided into two categories according to the metal or non-metal properties of the material. Due to its opacity, the main impact of the metal layer is the interference of its surface morphology (height difference) on the photolithography imaging; while the non-metal layer needs to consider not only the impact of its surface morphology. In addition, it is also necessary to consider the complex effects of its light transmittance and the reflection of the bottom layer on the photolithography imaging. Based on these classifications, different Topography models will be established in combination with actual conditions to accurately simulate the light propagation and imaging quality during the photolithography process.

[0075] Optionally, the Topography models generated by each layer prediction under different cross-line conditions are combined to form the OPC Topography model of the layer.

[0076] In one embodiment, the OPC Topography model uses the current layer measurement data online to simulate the exposure process of the layer, so that the simulated contour is closer to the online measurement data to achieve the effect of accurate prediction; the OPC Topography model of each layer of material refers to the establishment of the Topography model according to the cross-line classification, the fixed point accurate prediction, and finally merged into the OPC Topography model of the layer. Figure 4 As shown in FIG. 1 , a structured model combination diagram is shown. The composite topological model is composed of two basic models, Model 1 and Model 2. The two models are superimposed or combined with each other in some way in the diagram to form an overall topological structure.

[0077] There is an obvious film layer between Model 1 and Model 2, which is marked as Film C. Film C here plays the role of connecting the two models, or isolating, protecting or transmitting signals. In addition to Film C, there are two other film layers: Film B and Film A. They may be located at the top, bottom or other positions of the composite model, depending on their function and the overall design of the model. The model may be used to study specific characteristics of the photolithography mask, such as surface morphology, material distribution or optical properties.

[0078] Optionally, the target layout is used as the input of the lithography imaging model, OPC correction is performed, the prediction result is corrected, and the corrected Mask layout file is output, including:

[0079] Identify the input target layout;

[0080] Divide the edge of the target layout into multiple segments, and make predictions based on the position coordinates, CD values, and process conditions of each point to obtain prediction results, where the prediction results are the outline of the target layout;

[0081] By measuring the distance between the predicted result and the target layout, the accuracy of the OPC correction result can be determined;

[0082] After multiple iterations, the distance between the prediction result and the target layout is adjusted, and a corrected Mask layout file that meets the design requirements is output.

[0083] In one embodiment, the contour of the generated target layout is further accurately corrected by the lithography imaging model. According to the CD difference between the contour of the target layout extracted by simulation and the target layout at a specific position (such as line width, groove width, etc.), the algorithm is iteratively compensated to reduce the CD difference. The process is supervised by the measurement data of the actual CD difference until the simulation of each point is close to the target value after exposure, meeting the accuracy requirements of OPC correction. Finally, the lithography imaging model outputs the corrected Mask layout file.

[0084] The specific correction process includes: Figure 5 The figure shows the OPC correction and verification process. The correction module recognizes the input target layout and then operates the graphics, cutting each edge of the graphics into several segments. The length of each segment can be controlled, and then inserting a monitoring gauge at the center or specific location of each segment. After the edges of the graphics are cut into segments, they can be moved. After simulating the OPC Topography model once, an outline of the target layout will be obtained, as shown in the figure below. Figure 5 As shown, five contour lines appear. This process is the process of continuous convergence of correction. The first simulation obtains a contour line, which will be automatically compared with the input target layout and monitored through each inserted gauge. The distance between the contour line and the target layout, that is, EPE, is mainly considered. If the distance is large, it means that the Mask corrected by the recipe in this iteration, the simulated contour line and the target layout are quite different, and the recipe will move the edge of the graphic at that position; if the contour line is inside the target, then this edge will be moved outward by a certain distance, and the movement amount is controlled by the recipe; if the contour line is outside the target layout, then this edge will be moved inward by a certain distance, and then the OPC Topography model will simulate again to obtain a new contour line until the simulated contour line is close to the target layout (the monitoring gauge point meets the accuracy requirements, which is a value that is not fixed and is set in advance by the recipe).

[0085] This embodiment uses the OPC Topography model to classify the cross-line situation and establish a Topography model, and then accurately predict the fixed point, and finally merge them into the OP Topography model of the layer; further, the OPC correction process is used to simulate the OPC Topography model, simulate the target pattern after exposure, adjust the compensation value according to the CD difference, and automatically correct the Mask layout until the simulation of each point is close to the target value after exposure. The model uses the current layer measurement data online to simulate the exposure process of the layer, so that the simulation profile is closer to the online measurement data, so as to achieve the effect of accurate prediction.

[0086] This application also provides a detailed lithography image correction method based on Model-Based OPC, which is as follows:

[0087] Step 1: Collect the measured CD after exposure and organize it into the gauge format required for modeling

[0088] Step 2: Organize and analyze the Film stack information, light source file, and Mask information, and divide the layers into two categories based on metal and non-metal. The metal layer is opaque and is only affected by the height difference; the non-metal layer is translucent and is affected by both the height difference and the bottom layer reflection. Establish the OPC Topography model based on the actual situation.

[0089] Step 3: Take the target layout as the input of the lithography imaging model, simulate the target layout through the OPC Topography mode, and correct the generated layout according to the generated contour lines, and finally obtain the corrected Mask layout.

[0090] Step 4: Set up inspection items through OPC verify, mainly checking key parameters such as EPE, to ensure that the OPC correction meets the target size requirements and pixel error requirements, and then set up inspection items according to the Mask rule to check the accuracy of the corrected Mask layout to ensure that it meets the Mask shop manufacturing requirements. If the inspection passes, it can be sent to the Mask shop to make the mask.

[0091] The present application also provides a lithography image correction device based on OPC technology, such as Figure 6 As shown, including:

[0092] A modeling module is used to simulate different cross-layer exposure processes of the wafer through a lithography imaging model to obtain the prediction results of the lithography image of each layer of material;

[0093] The correction module is used to use the target layout as the input of the lithography imaging model, perform OPC correction, correct the prediction results, and output the corrected Mask layout file;

[0094] The inspection module sets up inspection items through OPC verify, performs pixel EPE inspection on the modified Mask layout file and accuracy inspection on the modified Mask;

[0095] The output module is used to output the optimally corrected Mask layout file.

[0096] It should be noted that the OPC-based lithography image correction device provided in this embodiment can implement the OPC-based lithography image correction method consistent with the above method embodiment, which will not be described in detail here.

[0097] In one embodiment, the present application also provides a storage medium, specifically a computer-readable storage medium (Memory), which is a memory device in a terminal device for storing programs and data. It is understandable that the computer-readable storage medium here can include both the built-in storage medium in the terminal device and the extended storage medium supported by the terminal device. The computer-readable storage medium provides a storage space, which stores the operating device of the terminal. In addition, one or more instructions suitable for being loaded and executed by the processor are also stored in the storage space, and these instructions can be one or more computer programs (including program codes). It should be noted that the computer-readable storage medium here can be a high-speed RAM memory or a non-volatile memory, such as at least one disk memory. The processor can load and execute one or more instructions stored in the computer-readable storage medium to implement a lithography image correction method based on OPC technology in the above embodiment.

[0098] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, devices, or computer program products. Therefore, the present application may adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment in combination with software and hardware. Moreover, the present application may adopt the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) that contain computer-usable program code.

[0099] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices, and computer program products according to the embodiments of the present application. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of the processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0100] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0101] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0102] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present application rather than to limit it. Although the present application has been described in detail with reference to the above embodiments, ordinary technicians in the relevant field should understand that the specific implementation methods of the present application can still be modified or replaced by equivalents, and any modifications or equivalent replacements that do not depart from the spirit and scope of the present application should be included in the scope of protection of the claims of the present application.

Claims

1. A lithography image correction method based on OPC technology, characterized in that: include: The lithography imaging model simulates the different cross-layer exposure processes of the wafer to obtain the predicted results of the lithography image of each layer of material; Taking the target layout as the input of the photolithography imaging model, performing OPC correction, correcting the prediction result, and outputting a corrected Mask layout file; By setting up inspection items through OPC verify, the pixel EPE inspection and the accuracy inspection of the modified Mask are performed on the modified Mask layout file, and the optimal modified Mask layout file is output.

2. A lithography image correction method based on OPC technology as claimed in claim 1, characterized in that: The photolithography imaging model includes: an Abbe imaging model and a Hopkins spatial imaging optical model; And the photoresist model composed of reaction rate equation and diffusion equation.

3. The photolithography image correction method based on OPC technology as claimed in claim 1, characterized in that: The lithography imaging model simulates different cross-layer exposure processes of the wafer to obtain the predicted results of the lithography image of each layer of material, including: Setting the film stack information, light source file, and mask information in the photolithography imaging model, wherein the film stack information includes multiple key parameters such as the refractive index and thickness of each layer of material, the light source file includes multiple key parameters such as the wavelength and intensity distribution of the light source, and the mask information includes multiple key parameters such as the pattern and material type of the mask; Simulate the light propagation and imaging quality of metal or non-metal layers, and output the predicted results of the lithography image of each layer of material.

4. A lithography image correction method based on OPC technology as claimed in claim 3, characterized in that: The Topography models generated by each layer's prediction under different cross-line conditions are combined to form the OPC Topography model of this layer.

5. The method for correcting a photolithography image based on OPC technology as claimed in claim 1, characterized in that: The lithography imaging model is supervised by cross-line and non-cross-line metrology data.

6. A lithography image correction method based on OPC technology as claimed in claim 5, characterized in that: Prior to monitoring the lithography imaging model through cross-line and non-cross-line metrology data, including: Performing data preprocessing on the cross-line and non-cross-line measurement data to obtain preprocessed data; And convert the preprocessed data into gauge format data.

7. The photolithography image correction method based on OPC technology as claimed in claim 1, characterized in that: Taking the target layout as the input of the lithography imaging model, performing OPC correction, correcting the prediction result, and outputting the corrected Mask layout file, including: Identify the input target layout; Divide the edge of the target layout into multiple segments, and perform prediction according to the position coordinates, CD values, and process conditions of each point to obtain a prediction result, wherein the prediction result is the outline of the target layout; By measuring the distance between the prediction result and the target layout, the accuracy of the OPC correction result is determined; After multiple iterations, the distance between the prediction result and the target layout is adjusted, and a modified Mask layout file that meets the design requirements is output.

8. A lithography image correction device based on OPC technology, characterized in that: include: A modeling module is used to simulate different cross-layer exposure processes of the wafer through a lithography imaging model to obtain the prediction results of the lithography image of each layer of material; A correction module, used for taking the target layout as the input of the lithography imaging model, performing OPC correction, correcting the prediction result, and outputting a corrected Mask layout file; The inspection module sets up inspection items through OPC verify, performs pixel EPE inspection on the modified Mask layout file and accuracy inspection on the modified Mask; The output module is used to output the optimally corrected Mask layout file.

9. A computer-readable storage medium storing a computer program, characterized in that: When the computer program is executed by a processor, the method for correcting a lithography image based on the OPC technology as claimed in any one of claims 1 to 7 is implemented.

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