Laser etching path determination method and device, electronic equipment and storage medium

Abstract

The invention provides a laser etching path determination method and device, electronic equipment and a storage medium, and relates to the technical field of laser etching path planning. The method comprises the following steps: firstly, obtaining area size information of a processing area, a data model of a to-be-etched surface and pattern size information of a to-be-etched array; secondly, based on the area size information, the data model and the pattern size information, clustering processing is carried out on the plurality of arrays to be etched, and at least one corresponding clustering cluster is obtained; and then, based on the clustering center of each cluster in the at least one cluster, determining a target laser etching path. On the basis of the content, the problem that in the prior art, the reliability of laser etching path determination is not high can be solved.

Description

Technical Field

[0001] The present application relates to the technical field of laser etching path planning, and in particular to a laser etching path determination method and device, electronic equipment and storage medium. Background Art

[0002] The function of ultrafast laser etching is to etch pattern arrays, such as circular arrays or square arrays, on the surface of parts to achieve hydrophobic effects. In the ultrafast laser precision etching process, ultrafast laser is generated by a laser, and the laser beam is controlled by a high-precision scanning system including a galvanometer and a field lens to achieve etching processing on the surface of the part. The scanning system formed by the galvanometer and the field lens often has a small processing area, which can usually be considered as a cubic area, such as 40×40×1mm in length, width and depth. A single pattern of the etching array is usually smaller than the processing area, and the area of ​​the part that needs to be etched is often larger than the processing area of ​​the scanning system. Therefore, the etching process requires the CNC machine tool motion system to continuously move the scanning system to change the processing area. Since the processing accuracy achieved by the galvanometer and field mirror is often much higher than the motion accuracy of the CNC machine tool, in order to improve the etching accuracy, during the etching process, the CNC machine tool stops after moving to the designated processing area, and the scanning system etches in the processing area. After the current etching area is processed, the scanning system stops working, and the CNC system moves the scanning system to the next processing area and stops, and so on, until the etching of the entire part is completed. That is, the CNC machine tool motion system and the etching scanning system are independent of each other and will not work at the same time.

[0003] From the above etching process, it can be seen that the planning of the ultrafast laser etching path is the planning of the position coordinates of the CNC system when the scanning system is working, and the planning of the array pattern that the scanning system needs to etch at this position, wherein the planning result has a great influence on the etching effect and etching efficiency. The existing path planning method is mainly based on experience, and usually only performs path planning and completes etching for a certain part or a batch of parts, and the planned path cannot be applied to the etching process of other parts. Especially when there are many etching arrays, or when etching three-dimensional surfaces, the existing methods cannot accurately and efficiently obtain the moving position of the CNC system and the pattern to be etched at the corresponding position. In other words, in the prior art, there is a problem of low reliability in determining the laser etching path. Summary of the invention

[0004] In view of this, the purpose of the present application is to provide a laser etching path determination method and device, electronic equipment and storage medium, so as to improve the problem of low reliability of laser etching path determination in the prior art.

[0005] To achieve the above objectives, this application adopts the following technical solutions:

[0006] A method for determining a laser etching path, comprising:

[0007] Acquire the area size information of the processing area, the data model of the surface to be etched, and the pattern size information of the array to be etched, wherein the processing area refers to the maximum scanning etching area of ​​the target laser etching system at one position, the data model is a three-dimensional model, the array to be etched refers to an area to be etched, and there are multiple arrays to be etched on the surface to be etched;

[0008] Based on the region size information, the data model and the pattern size information, clustering the plurality of arrays to be etched to obtain at least one corresponding cluster, wherein each cluster includes at least one array to be etched;

[0009] Based on the cluster center of each cluster in the at least one cluster, a target laser etching path is determined, wherein the target laser etching system is used to sequentially perform laser etching processing on the plurality of arrays to be etched along the target laser etching path to form corresponding etching arrays.

[0010] In a preferred embodiment of the present application, in the above-mentioned method for determining the laser etching path, the step of clustering the plurality of arrays to be etched based on the region size information, the data model and the pattern size information to obtain at least one corresponding cluster includes:

[0011] Based on the array to be etched, a corresponding cluster to be split is formed, wherein before the first splitting process is performed, the cluster to be split includes all the arrays to be etched;

[0012] Based on the region size information, the data model and at least part of the pattern size information, the cluster to be split is split to form two corresponding split sub-clusters, and based on all the split sub-clusters formed by each splitting process, a set of clusters to be determined is formed;

[0013] Determining whether to continue splitting processing based on at least part of the region size information, the data model, and the pattern size information;

[0014] When it is necessary to continue the splitting process, a split sub-cluster is determined from all the split sub-clusters included in the pending cluster set as a target split sub-cluster;

[0015] The target split sub-cluster is used as a new cluster to be split, and the steps of splitting the cluster to be split based on the region size information, the data model and at least part of the pattern size information are executed in a reverse manner to form two corresponding split sub-clusters, and forming a pending cluster set based on all the split sub-clusters formed by each splitting process, until there is no need to continue the splitting process, and each split sub-cluster included in the pending cluster set is used as a clustering cluster.

[0016] In a preferred embodiment of the present application, in the above-mentioned laser etching path determination method, the step of splitting the cluster to be split based on the region size information, the data model and at least part of the pattern size information to form two corresponding split sub-clusters, and forming a cluster set to be determined based on all the split sub-clusters formed by each splitting process, includes:

[0017] Determining two pending splitting centers in the to-be-split cluster;

[0018] Based on the position coordinates of each array to be etched in the data model, each array to be etched in the cluster to be split is respectively assigned to a pending set corresponding to a pending splitting center that is closest to the array to be etched, so as to form two corresponding pending sets;

[0019] For each of the pending sets, based on the position coordinates of each array to be etched in the pending set, the center position coordinates of each array to be etched in the pending set are determined;

[0020] Determining whether to continue the allocation process based on the two center position coordinates corresponding to the two pending sets and the two pending split centers;

[0021] When it is necessary to continue the allocation process, the positions corresponding to the two center position coordinates corresponding to the two pending sets are used as two new pending splitting centers, so as to perform the allocation process on each array to be etched in the cluster to be split based on the position coordinates of each array to be etched in the data model, so as to allocate it to the pending set corresponding to the nearest pending splitting center, so as to form the corresponding two pending sets;

[0022] When there is no need to continue the allocation process, the two pending sets formed by the last allocation process are used as the corresponding two split sub-clusters, and a pending cluster set is formed based on all the split sub-clusters formed by each split process.

[0023] In a preferred embodiment of the present application, in the above-mentioned laser etching path determination method, the step of determining whether to continue the allocation process based on the two center position coordinates corresponding to the two pending sets and the two pending splitting centers includes:

[0024] Determine whether the two center position coordinates corresponding to the two pending sets are consistent with the position coordinates corresponding to the two pending split centers;

[0025] When the two center position coordinates corresponding to the two pending sets are consistent with the position coordinates corresponding to the two pending split centers, it is determined that there is no need to continue the allocation process;

[0026] When the two center position coordinates corresponding to the two pending sets are inconsistent with the position coordinates corresponding to the two pending split centers, it is determined that the allocation process needs to be continued.

[0027] In a preferred embodiment of the present application, in the above-mentioned laser etching path determination method, the step of determining whether to continue the splitting process based on the region size information, the data model and at least part of the pattern size information includes:

[0028] For each split sub-cluster in the pending cluster set, respectively determine whether the distance between the position coordinates of each array to be etched in the split sub-cluster in the data model and the center position coordinates of the split sub-cluster in the data model matches the region size information and the pattern size information, wherein matching the region size information and the pattern size information means that the region to be etched determined based on the corresponding position coordinates and pattern size information of the array to be etched is covered by the region determined based on the center position coordinates and region size information corresponding to the split sub-cluster, and in the process of determining the region, the data model is rotated so that the normal vector of the center position corresponding to the split sub-cluster on the surface to be etched is rotated to be parallel to the target coordinate axis of the data model to determine the region;

[0029] When each of the to-be-etched arrays in each of the split sub-clusters matches the region size information and the pattern size information, determining that the splitting process does not need to be continued;

[0030] When each of the to-be-etched arrays in each of the split sub-clusters does not match the region size information and the pattern size information, it is determined that the splitting process needs to be continued.

[0031] In a preferred embodiment of the present application, in the above-mentioned laser etching path determination method, when it is necessary to continue the splitting process, the step of determining a split sub-cluster from all the split sub-clusters included in the pending cluster set as the target split sub-cluster includes:

[0032] When it is necessary to continue the splitting process, for each split sub-cluster included in the pending cluster set, based on the distance between the position coordinates of each array to be etched in the split sub-cluster in the data model and the center position coordinates of the split sub-cluster in the data model, determining the splitting error parameter of the split sub-cluster;

[0033] In each split sub-cluster included in the pending cluster set, a split sub-cluster with a maximum split error parameter is determined as a target split sub-cluster.

[0034] In a preferred embodiment of the present application, in the above-mentioned laser etching path determination method, when it is necessary to continue the splitting process, for each split sub-cluster included in the pending cluster set, based on the distance between the position coordinates of each to-be-etched array in the split sub-cluster in the data model and the center position coordinates of the split sub-cluster in the data model, the step of determining the splitting error parameter of the split sub-cluster includes:

[0035] When it is necessary to continue the splitting process, for each split sub-cluster included in the pending cluster set, based on the distance between the position coordinates of each array to be etched in the split sub-cluster in the data model and the center position coordinates of the split sub-cluster in the data model, classify each array to be etched in the split sub-cluster to obtain the first type of array to be etched and the second type of array to be etched corresponding to the split sub-cluster;

[0036] For each split sub-cluster, based on the distance between the position coordinates of each to-be-etched array in the first type to-be-etched array corresponding to the split sub-cluster in the data model and the center position coordinates of the split sub-cluster in the data model, determine a first error parameter corresponding to the split sub-cluster;

[0037] For each split sub-cluster, based on the distance between the position coordinates of each to-be-etched array in the second type to-be-etched array corresponding to the split sub-cluster in the data model and the center position coordinates of the split sub-cluster in the data model, determine the second error parameter corresponding to the split sub-cluster;

[0038] For each split sub-cluster, a split error parameter of the split sub-cluster is determined based on the first error parameter and the second error parameter corresponding to the split sub-cluster.

[0039] In a preferred embodiment of the present application, in the above-mentioned laser etching path determination method, the step of determining, for each split sub-cluster, a split error parameter of the split sub-cluster based on the first error parameter and the second error parameter corresponding to the split sub-cluster, comprises:

[0040] Determining a preset distance weight coefficient, wherein the distance weight coefficient is greater than or equal to 1;

[0041] For each split subcluster, the second error parameter corresponding to the split subcluster is weighted based on the distance weight coefficient, and the weighted result and the first error parameter corresponding to the split subcluster are summed to obtain the split error parameter of the split subcluster.

[0042] The present application also provides a laser etching path determination device, comprising:

[0043] An etching information acquisition module is used to acquire the area size information of the processing area, the data model of the surface to be etched, and the pattern size information of the array to be etched, wherein the processing area refers to the maximum scanning etching area of ​​the target laser etching system at one position, the data model is a three-dimensional model, the array to be etched refers to an area to be etched, and there are multiple arrays to be etched on the surface to be etched;

[0044] An etching array clustering module, used for clustering the plurality of arrays to be etched based on the region size information, the data model and the pattern size information to obtain at least one corresponding cluster, wherein each cluster includes at least one array to be etched;

[0045] The etching path determination module is used to determine the target laser etching path based on the cluster center of each cluster in the at least one cluster, wherein the target laser etching system is used to perform laser etching processing on the multiple arrays to be etched in sequence along the target laser etching path to form corresponding etching arrays.

[0046] Based on the above, the present application also provides an electronic device, including:

[0047] Memory for storing computer programs;

[0048] The processor connected to the memory is used to execute the computer program stored in the memory to implement the above-mentioned laser etching path determination method.

[0049] On the basis of the above, the present application also provides a computer-readable storage medium, in which a computer program is stored, and when the computer program is run, each step of the above-mentioned laser etching path determination method is executed.

[0050] The laser etching path determination method and device, electronic device and storage medium provided by the present application first obtain the regional size information of the processing area, the data model of the surface to be etched and the pattern size information of the array to be etched; secondly, based on the regional size information, the data model and the pattern size information, a plurality of arrays to be etched are clustered to obtain at least one corresponding cluster; then, based on the cluster center of each cluster in the at least one cluster, the target laser etching path is determined. Based on the above content, since the plurality of arrays to be etched are clustered based on the regional size information, the data model and the pattern size information before the path determination is performed, the reliability of the clustering process can be higher, therefore, when the path determination is performed based on the result of the clustering process, it can also have a higher reliability, thereby making the determined target laser etching path more reliable, and therefore, the problem of low reliability of laser etching path determination existing in the prior art can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, preferred embodiments are specifically cited below and described in detail with reference to the attached drawings.

[0052] Figure 1 A structural block diagram of an electronic device provided in an embodiment of the present application.

[0053] Figure 2 A schematic flow chart of a method for determining a laser etching path provided in an embodiment of the present application.

[0054] Figure 3 A schematic diagram of an etched surface provided in an embodiment of the present application.

[0055] Figure 4 A schematic diagram of a cluster provided in an embodiment of the present application.

[0056] Figure 5 A block diagram of a laser etching path determination device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0057] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.

[0058] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for which protection is sought, but merely represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0059] like Figure 1 As shown, an embodiment of the present application provides an electronic device, wherein the electronic device may include a memory, a processor, and a laser etching path determination device.

[0060] In detail, the memory and the processor are electrically connected directly or indirectly to realize data transmission or interaction. For example, the memory and the processor can be electrically connected through one or more communication buses or signal lines. The laser etching path determination device includes at least one software function module stored in the memory in the form of software or firmware. The processor is used to execute an executable computer program stored in the memory, for example, the software function module and computer program included in the laser etching path determination device, so as to implement the laser etching path determination method provided in the embodiment of the present application.

[0061] Optionally, the memory can be, but is not limited to, random access memory (RAM), read only memory (ROM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable read-only memory (Electric Erasable Programmable Read-Only Memory, EEPROM), etc.

[0062] Furthermore, the processor may be a general-purpose processor, including a central processing unit (CPU), a network processor (NP), a system on chip (SoC), etc.; it may also be a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components.

[0063] Understandably, Figure 1 The structure shown is for illustration only, and the electronic device may also include Figure 1 More or fewer components as shown, or with Figure 1 The different configurations shown, for example, may also include a communication unit for exchanging information with other devices.

[0064] Combination Figure 2 The embodiment of the present application also provides a method for determining a laser etching path applicable to the above electronic device, wherein the method steps defined in the process related to the method for determining a laser etching path can be implemented by the electronic device.

[0065] The following will Figure 2 The specific process shown is explained in detail.

[0066] Step S110, obtaining the area size information of the processing area, the data model of the surface to be etched, and the pattern size information of the array to be etched.

[0067] In the embodiment of the present application, the electronic device can obtain the regional size information (such as length, width, and height) of the processing area, the data model of the surface to be etched, and the pattern size information (such as length and width) of the array to be etched. Among them, the processing area refers to the maximum scanning etching area of ​​the target laser etching system at a position, the data model is a three-dimensional model, the array to be etched refers to an area that needs to be etched, and there are multiple arrays to be etched on the surface to be etched. For example, Figure 3 As shown, the plane to be etched can be composed of two planes with an angle of 135 degrees, which can be specifically represented by a corresponding data model. In addition, the array to be etched refers to the material in the corresponding area that needs to be etched away. Figure 3 In the example, it may mean that the material within the circle needs to be etched away.

[0068] Step S120: clustering the plurality of arrays to be etched based on the region size information, the data model and the pattern size information to obtain at least one corresponding cluster.

[0069] In an embodiment of the present application, the electronic device can perform clustering processing on the plurality of arrays to be etched based on the region size information, the data model and the pattern size information to obtain at least one corresponding cluster, that is, similar arrays to be etched can be aggregated together for etching. Each of the clusters includes at least one array to be etched. Figure 4 , 16 clusters can be formed, each of the 12 clusters includes 4 arrays to be etched, and each of the 4 clusters includes 2 arrays to be etched.

[0070] Step S130: determining a target laser etching path based on the cluster center of each cluster in the at least one cluster.

[0071] In an embodiment of the present application, the electronic device can determine a target laser etching path based on the cluster center of each cluster in the at least one cluster. The target laser etching system is used to sequentially perform laser etching on the plurality of arrays to be etched along the target laser etching path to form corresponding etching arrays. Figure 4 As shown, the target laser etching path formed can be cluster 1-cluster 2-cluster 3-cluster 4-cluster 1-cluster 6-cluster 7-cluster 8-cluster 9-cluster 10-cluster 11-cluster 12-cluster 13-cluster 14-cluster 15-cluster 16.

[0072] Based on the above content, since multiple arrays to be etched are clustered based on the area size information, data model and pattern size information before path determination, the reliability of clustering processing can be higher. Therefore, when the path is determined based on the result of clustering processing, it can also have a higher reliability, so that the determined target laser etching path is more reliable. Therefore, it can improve the problem of low reliability of laser etching path determination in the prior art, thereby achieving better effect when etching based on the laser etching path.

[0073] It should be noted that for step S120, the specific method of clustering the plurality of arrays to be etched is not limited and can be selected according to actual needs.

[0074] For example, in an alternative implementation, in order to ensure the reliability of clustering processing, the above-mentioned step S120 may further include step S121, step S122, step S123, step S124 and step S125, and the specific content of each step is described as follows.

[0075] Step S121: forming a corresponding cluster to be split based on the array to be etched.

[0076] In the embodiment of the present application, a corresponding cluster to be split can be formed based on the array to be etched. Before the first splitting process, the cluster to be split includes all the arrays to be etched. That is, the cluster to be split formed for the first time includes all the arrays to be etched.

[0077] Step S122, based on the region size information, the data model and at least part of the pattern size information, split the cluster to be split to form two corresponding split sub-clusters, and form a set of clusters to be determined based on all the split sub-clusters formed by each splitting process.

[0078] In the embodiment of the present application, after the cluster to be split is formed, the cluster to be split can be split based on the region size information, the data model and at least part of the pattern size information to form two corresponding split sub-clusters, and a cluster set to be determined is formed based on all the split sub-clusters formed by each split process. In other words, the unrelated arrays to be etched in the cluster to be split can be split into two different split sub-clusters based on the region size information, the data model and at least part of the pattern size information.

[0079] Step S123, determining whether to continue splitting processing based on the region size information, the data model and at least part of the pattern size information.

[0080] In an embodiment of the present application, after the cluster to be split is split to form two split sub-clusters, it can be determined whether the splitting process needs to be continued based on at least part of the region size information, the data model and the pattern size information.

[0081] Step S124: when it is necessary to continue the splitting process, a splitting sub-cluster is determined from all the splitting sub-clusters included in the pending cluster set as a target splitting sub-cluster.

[0082] In the embodiment of the present application, when it is determined that the splitting process needs to be continued, a split sub-cluster may be determined from all the split sub-clusters included in the pending cluster set, and then the determined split sub-cluster may be used as the target split sub-cluster.

[0083] Step S125, taking the target split sub-cluster as a new cluster to be split, and reversing the steps of splitting the cluster to be split based on the region size information, the data model and at least part of the pattern size information to form two corresponding split sub-clusters, and forming a pending cluster set based on all the split sub-clusters formed by each splitting process, until there is no need to continue the splitting process, and each split sub-cluster included in the pending cluster set is used as a cluster cluster.

[0084] In an embodiment of the present application, after the target split sub-cluster is determined, the target split sub-cluster can be used as a new cluster to be split, so as to perform the step of splitting the cluster to be split based on the region size information, the data model and at least part of the pattern size information to form two corresponding split sub-clusters, and forming a pending cluster set based on all the split sub-clusters formed by each splitting process, until it is no longer necessary to continue the splitting process, each split sub-cluster included in the pending cluster set is used as a cluster cluster, that is, the step S122 is performed in a reverse manner. For example, first, all the arrays to be etched can be combined together to form a first cluster to be split, and then the arrays to be etched in the first cluster to be split can be split to form split sub-cluster 1 and split sub-cluster 2, and then it is determined whether it is necessary to continue the splitting process. If not, split sub-cluster 1 and split sub-cluster 2 are used as cluster clusters, that is, two cluster clusters are obtained. If necessary, a split subcluster is determined from split subcluster 1 and split subcluster 2, such as split subcluster 1 is used as the target split subcluster, and then the target split subcluster is used as the new cluster to be split (i.e., the second cluster to be split) for splitting, and split subcluster 3 and split subcluster 4 are obtained. In this way, it is judged again whether it is necessary to continue the splitting process. If not, split subcluster 2, split subcluster 3 and split subcluster 4 are used as cluster clusters respectively, that is, 3 cluster clusters are obtained. If necessary, a split subcluster is determined from split subcluster 2, split subcluster 3 and split subcluster 4, such as split subcluster 2 is used as the target split subcluster, and then the target split subcluster is used as the new cluster to be split (i.e., the third cluster to be split) for splitting, and split subcluster 5 and split subcluster 6 are obtained. In this way, it is judged again whether it is necessary to continue the splitting process, and so on.

[0085] It can be understood that, in the above step S122, the specific method of splitting the to-be-split cluster and forming the to-be-determined cluster set is not limited and can be selected according to actual needs.

[0086] For example, in an alternative embodiment, in order to enable a reliable etching path to be determined based on the clusters formed by splitting, the above-mentioned step S122 may further include step S122a, step S122b, step S122c, step S122d, step S122e and step S122f, and the specific contents of each step are described as follows.

[0087] Step S122a, determining two to-be-determined splitting centers in the to-be-split cluster.

[0088] In an embodiment of the present application, after the cluster to be split is formed, two pending splitting centers can be determined in the cluster to be split. Exemplarily, two arrays to be etched can be randomly determined as two pending splitting centers. It should be noted that the pending splitting center can refer to the center of the array to be etched, such as the center of a circular array to be etched as the center of the circle. Exemplarily, the determined pending splitting center may not be the center of the array to be etched, but may be an area outside the array to be etched.

[0089] Step S122b, based on the position coordinates of each array to be etched in the data model, each array to be etched in the cluster to be split is respectively allocated to the pending set corresponding to the nearest pending splitting center to form two corresponding pending sets.

[0090] In the embodiment of the present application, after forming two pending splitting centers, each array to be etched in the pending splitting cluster can be allocated and processed based on the position coordinates of each array to be etched in the data model, so as to be allocated to the pending set corresponding to the nearest pending splitting center, so as to form two corresponding pending sets. For example, if array 1 to be etched is closer to the first pending splitting center, array 1 to be etched is allocated to the pending set corresponding to the first pending splitting center; if array 2 to be etched is closer to the second pending splitting center, array 2 to be etched is allocated to the pending set corresponding to the second pending splitting center.

[0091] Step S122c: for each of the pending sets, based on the position coordinates of each array to be etched in the pending set, determine the center position coordinates of each array to be etched in the pending set.

[0092] In the embodiment of the present application, after two pending sets are formed, for each of the pending sets, the center position coordinates of each array to be etched in the pending set can be determined based on the position coordinates of each array to be etched in the pending set. The mean of the position coordinates of the array center of each array to be etched in the pending set can be calculated to obtain the center position coordinates of the pending set.

[0093] Step S122d: Determine whether the allocation process needs to be continued based on the two center position coordinates corresponding to the two pending sets and the two pending split centers.

[0094] In an embodiment of the present application, after obtaining the center position coordinates corresponding to the pending set, it can be determined whether the allocation processing needs to be continued based on the two center position coordinates corresponding to the two pending sets and the two pending split centers.

[0095] Step S122e, when it is necessary to continue the allocation processing, the positions corresponding to the two center position coordinates corresponding to the two pending sets are used as two new pending splitting centers, so as to rotate and execute the step of respectively allocating each array to be etched in the cluster to be split based on the position coordinates of each array to be etched in the data model, so as to allocate it to the pending set corresponding to the nearest pending splitting center, so as to form the corresponding two pending sets.

[0096] In an embodiment of the present application, when it is determined that the splitting process needs to continue, the positions corresponding to the two center position coordinates corresponding to the two pending sets can be used as two new pending splitting centers, so as to rotate and execute the step of respectively allocating and processing each array to be etched in the cluster to be split based on the position coordinates of each array to be etched in the data model, so as to allocate it to the pending set corresponding to the nearest pending splitting center to form two corresponding pending sets, that is, rotate and execute step S122b.

[0097] Step S122f, when there is no need to continue the allocation process, the two pending sets formed by the last allocation process are used as the corresponding two split sub-clusters, and a pending cluster set is formed based on all the split sub-clusters formed by each split process.

[0098] In the embodiment of the present application, when it is determined that the allocation process does not need to be continued, the two pending sets formed by the last allocation process are used as the corresponding two split sub-clusters, and a pending cluster set is formed based on all the split sub-clusters formed by each split process. Exemplarily, in other embodiments, it is also possible to determine whether the split process needs to be continued by judging whether the newly formed pending set overlaps with the previously formed pending set. For example, if the newly formed pending set overlaps with the previously formed pending set (or the overlap is greater than a preset value), it can be determined that the split process does not need to be continued; on the contrary, if the newly formed pending set does not overlap with the previously formed pending set (or the overlap is less than a preset value), it can be determined that the split process needs to be continued.

[0099] It is understandable that, in an alternative implementation, the above step S122d may further include the following specific implementation contents:

[0100] First, it can be determined whether the two center position coordinates corresponding to the two pending sets and the position coordinates corresponding to the two pending split centers are consistent;

[0101] Then, when the two center position coordinates corresponding to the two pending sets are consistent with the position coordinates corresponding to the two pending split centers, it is determined that there is no need to continue the allocation process;

[0102] Finally, when the two center position coordinates corresponding to the two pending sets and the position coordinates corresponding to the two pending split centers are inconsistent, it is determined that the allocation processing needs to be continued; that is, the iteration can be performed until the two center position coordinates corresponding to the two pending sets and the position coordinates corresponding to the two pending split centers are consistent, and then two corresponding split sub-clusters are formed.

[0103] It can be understood that, in the above step S123, the specific method of determining whether to continue the splitting process is not limited and can be selected according to actual needs.

[0104] For example, in an alternative implementation, in order to ensure the reliability of the split sub-cluster formed by the split, the above-mentioned step S123 may further include step S123a, step S123b and step S123c, and the specific content of each step is described as follows.

[0105] Step S123a, for each split sub-cluster in the pending cluster set, determine whether the distance between the position coordinates of each array to be etched in the split sub-cluster in the data model and the center position coordinates of the split sub-cluster in the data model matches the region size information and the pattern size information.

[0106] In an embodiment of the present application, for each split sub-cluster in the set of pending clusters, it is possible to determine whether the distance between the position coordinates of each array to be etched in the split sub-cluster in the data model and the center position coordinates of the split sub-cluster in the data model matches the region size information and the pattern size information. Exemplarily, the edge points of the array to be etched can be determined based on the position coordinates of the array to be etched and the pattern size information, and then the distance between each edge point and the center position coordinates of the split sub-cluster is calculated, and the farthest edge point is determined based on the distance. Finally, if the edge point is located in the region determined by the center position coordinates and the region size information, it is considered to be matched, that is, it is necessary to ensure that each point of the array to be etched belongs to the processing region with the center position coordinates as the center point. Among them, matching with the area size information and the pattern size information means that the area to be etched determined by the to-be-etched array based on the corresponding position coordinates and pattern size information is covered by the area determined based on the center position coordinates and area size information corresponding to the split sub-cluster, and in the process of determining the area, the data model is rotated so that the normal vector of the center position corresponding to the split sub-cluster on the to-be-etched surface is rotated to be parallel to the target coordinate axis of the data model to determine the area. In other words, the processing area of ​​the split sub-cluster (i.e., the cluster center) can be determined by: obtaining the cluster center P kThe normal vector Rotate the data model to P k is the rotation center, and the rotation Rotate to be parallel to the Z axis, where the XOY plane of the data model is the plane composed of the length and width of the surface to be etched, so that the processing area with the cluster center as the processing center can be obtained. In addition, the cluster center P k The normal vector You can take P k The normal vector to the nearest point on the surface to be etched can also be P k The normal vector of the projection point on the surface to be etched along the Z axis.

[0107] Step S123b: when each of the to-be-etched arrays in each of the split sub-clusters matches the region size information and the pattern size information, it is determined that the splitting process does not need to be continued.

[0108] In the embodiment of the present application, after obtaining the corresponding matching comparison result, when each of the to-be-etched arrays in each of the split sub-clusters matches the region size information and the pattern size information, it can be determined that the splitting process does not need to be continued.

[0109] Step S123c: when each of the to-be-etched arrays in each of the split sub-clusters does not match the region size information and the pattern size information, it is determined that the splitting process needs to be continued.

[0110] In the embodiment of the present application, after obtaining the corresponding matching comparison result, when each of the to-be-etched arrays in each of the split sub-clusters does not match the region size information and the pattern size information, it can be determined that the splitting process needs to be continued. In other words, when at least one of the to-be-etched arrays in at least one of the split sub-clusters does not match the region size information and the pattern size information, it can be determined that the splitting process needs to be continued.

[0111] It can be understood that, in the above step S124, the specific method of determining the target split sub-cluster is not limited and can be selected according to actual needs.

[0112] For example, in an alternative implementation, in order to improve the efficiency and reliability of splitting so that the efficiency and reliability of clustering can be guaranteed, the above-mentioned step S124 can further include step S124a and step S124b, and the specific content of each step is described as follows.

[0113] Step S124a, when it is necessary to continue the splitting process, for each split sub-cluster included in the pending cluster set, based on the distance between the position coordinates of each array to be etched in the split sub-cluster in the data model and the center position coordinates of the split sub-cluster in the data model, determine the splitting error parameter of the split sub-cluster.

[0114] In an embodiment of the present application, when it is necessary to continue the splitting process, for each split sub-cluster included in the pending cluster set, the splitting error parameter of the split sub-cluster can be determined based on the distance between the position coordinates of each array to be etched in the split sub-cluster in the data model and the center position coordinates of the split sub-cluster in the data model. Exemplarily, there can be a positively correlated correspondence between the distance and the splitting error parameter.

[0115] Step S124b: Determine a split subcluster with a maximum split error parameter in each split subcluster included in the pending cluster set as a target split subcluster.

[0116] In the embodiment of the present application, after determining the split error parameter, a split subcluster with a maximum split error parameter can be determined in each split subcluster included in the pending cluster set as the target split subcluster. That is, when a split process is required, a split subcluster with a maximum split error parameter can be determined in all current split subclusters each time, so as to perform the split process again to reduce the corresponding split error parameter.

[0117] It can be understood that, in the above step S124a, the specific method of determining the splitting error parameter of the split sub-cluster is not limited and can be selected according to actual needs.

[0118] For example, in an alternative embodiment, in order to speed up the efficiency of the splitting process and ensure that the arrays to be etched after the splitting are as much as possible in the corresponding processing area, the above-mentioned step S124a can further include step a1, step a2, step a3 and step a4, and the specific content of each step is described as follows.

[0119] Step a1, when it is necessary to continue the splitting process, for each split sub-cluster included in the pending cluster set, based on the distance between the position coordinates of each array to be etched in the split sub-cluster in the data model and the center position coordinates of the split sub-cluster in the data model, each array to be etched in the split sub-cluster is classified to obtain the first type of array to be etched and the second type of array to be etched corresponding to the split sub-cluster.

[0120] In the embodiment of the present application, when it is necessary to continue the splitting process, for each split sub-cluster included in the pending cluster set, each array to be etched in the split sub-cluster can be classified based on the distance between the position coordinates of each array to be etched in the split sub-cluster in the data model and the center position coordinates of the split sub-cluster in the data model, so as to obtain the first type of array to be etched and the second type of array to be etched corresponding to the split sub-cluster. Exemplarily, the array to be etched that is already in the processing area centered on the center position coordinates can be allocated to the first type of array to be etched, and the array to be etched that is not yet in the processing area centered on the center position coordinates can be allocated to the second type of array to be etched.

[0121] Step a2: for each split subcluster, based on the distance between the position coordinates of each array to be etched in the first type of array to be etched corresponding to the split subcluster in the data model and the center position coordinates of the split subcluster in the data model, determine the first error parameter corresponding to the split subcluster.

[0122] In the embodiment of the present application, after obtaining the first type of arrays to be etched, for each split sub-cluster, the first error parameter corresponding to the split sub-cluster can be determined based on the distance between the position coordinates of each array to be etched in the first type of arrays to be etched corresponding to the split sub-cluster in the data model and the center position coordinates of the split sub-cluster in the data model. Exemplarily, the sum of the square values ​​of the distances can be calculated as the first error parameter.

[0123] Step a3: for each split subcluster, based on the distance between the position coordinates of each array to be etched in the second type of array to be etched corresponding to the split subcluster in the data model and the center position coordinates of the split subcluster in the data model, determine the second error parameter corresponding to the split subcluster.

[0124] In the embodiment of the present application, after obtaining the second type of array to be etched, for each split sub-cluster, the second error parameter corresponding to the split sub-cluster can be determined based on the distance between the position coordinates of each array to be etched in the second type of array to be etched corresponding to the split sub-cluster in the data model and the center position coordinates of the split sub-cluster in the data model. Exemplarily, the sum of the square values ​​of each distance can be calculated as the second error parameter.

[0125] Step a4: for each split sub-cluster, based on the first error parameter and the second error parameter corresponding to the split sub-cluster, determine the split error parameter of the split sub-cluster.

[0126] In the embodiment of the present application, after obtaining the corresponding first error parameter and second error parameter, for each split sub-cluster, the split error parameter of the split sub-cluster can be determined based on the first error parameter and second error parameter corresponding to the split sub-cluster. In other words, the first error parameter and the second error parameter can be fused to obtain the split error parameter.

[0127] It is understandable that in the above-mentioned implementation, the specific implementation of step a4 is not limited. For example, in order to improve the reliability and efficiency of the splitting process, it may include:

[0128] First, a preset distance weight coefficient is determined, wherein the distance weight coefficient is greater than or equal to 1; illustratively, in a specific application, the distance weight coefficient may be equal to 10;

[0129] Secondly, for each split sub-cluster, the second error parameter corresponding to the split sub-cluster is weighted (such as multiplied) based on the distance weight coefficient, and the weighted result and the first error parameter corresponding to the split sub-cluster are summed to obtain the split error parameter of the split sub-cluster.

[0130] It should be noted that for step S130 , the specific method of determining the target laser etching path is not limited and can be selected according to actual needs.

[0131] For example, in an alternative embodiment, after obtaining the at least one cluster, the cluster centers of all clusters can be projected onto the XOY plane, and then sorted from left to right and from bottom to top, or by using algorithms such as ant colonies, so as to form a corresponding target laser etching path. Exemplarily, based on this, the position to which the numerical control system needs to move can be formed, and in other embodiments, the laser scanning path of the array to be etched at this position can be further determined (specifically, it can be determined in combination with the specific pattern shape of the array, the distribution of the array, etc.).

[0132] It should be noted that the laser etching processing program based on the above-mentioned target laser etching path can be a three-axis, five-axis or higher CNC processing program, or can be a robot processing program.

[0133] Combination Figure 5 The embodiment of the present application also provides a laser etching path determination device applicable to the above electronic device. The laser etching path determination device may include an etching information acquisition module, an etching array clustering module and an etching path determination module.

[0134] The etching information acquisition module is used to acquire the area size information of the processing area, the data model of the surface to be etched, and the pattern size information of the array to be etched, wherein the processing area refers to the maximum scanning etching area of ​​the target laser etching system at a position, the data model is a three-dimensional model, the array to be etched refers to an area to be etched, and there are multiple arrays to be etched on the surface to be etched. In the embodiment of the present application, the etching information acquisition module can be used to perform Figure 2 As shown in step S110, the relevant contents of the etching information acquisition module can refer to the above description of step S110.

[0135] The etching array clustering module is used to perform clustering processing on the plurality of arrays to be etched based on the region size information, the data model and the pattern size information to obtain at least one corresponding cluster, wherein each cluster includes at least one array to be etched, and in the process of clustering processing, the basis of clustering processing also includes the normal vector of the cluster center on the surface to be etched. In the embodiment of the present application, the etching array clustering module can be used to perform Figure 2 As shown in step S120, the relevant contents of the etching array clustering module can refer to the above description of step S120.

[0136] The etching path determination module is used to determine a target laser etching path based on the cluster center of each cluster in the at least one cluster, wherein the target laser etching system is used to sequentially perform laser etching processing on the plurality of arrays to be etched along the target laser etching path to form corresponding etching arrays. In the embodiment of the present application, the etching path determination module can be used to perform Figure 2 As shown in step S130, the relevant contents of the etching path determination module can refer to the above description of step S130.

[0137] In an embodiment of the present application, corresponding to the above-mentioned laser etching path determination method applied to the electronic device, a computer-readable storage medium is also provided, in which a computer program is stored, and when the computer program is run, each step of the laser etching path determination method is executed. Among them, each step executed when the aforementioned computer program is run will not be repeated here one by one, and reference can be made to the above explanation of the laser etching path determination method.

[0138] In summary, the laser etching path determination method and device, electronic device and storage medium provided by the present application first obtain the regional size information of the processing area, the data model of the surface to be etched and the pattern size information of the array to be etched; secondly, based on the regional size information, the data model and the pattern size information, a plurality of arrays to be etched are clustered to obtain at least one corresponding cluster; then, based on the cluster center of each cluster in at least one cluster, the target laser etching path is determined. Based on the above content, since before the path determination, the plurality of arrays to be etched are clustered based on the regional size information, the data model and the pattern size information, the reliability of the clustering process can be higher, therefore, when the path is determined based on the result of the clustering process, it can also have a higher reliability, so that the determined target laser etching path is more reliable, therefore, the problem of low reliability of laser etching path determination existing in the prior art can be improved, and then a better effect can be achieved when etching based on the laser etching path.

[0139] In several embodiments provided in the embodiments of the present application, it should be understood that the disclosed device and method can also be implemented in other ways. The device and method embodiments described above are merely schematic, for example, the flowcharts and block diagrams in the accompanying drawings show the possible architecture, functions and operations of the device, method and computer program product according to multiple embodiments of the present application. In this regard, each box in the flowchart or block diagram can represent a module, a program segment or a part of a code, and the module, a program segment or a part of a code contains one or more executable instructions for implementing a specified logical function. It should also be noted that in some alternative implementations, the functions marked in the box can also occur in a different order from the order marked in the accompanying drawings. For example, two consecutive boxes can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram and / or flowchart, and the combination of boxes in the block diagram and / or flowchart can be implemented with a dedicated hardware-based system that performs a specified function or action, or can be implemented with a combination of dedicated hardware and computer instructions.

[0140] In addition, the functional modules in the various embodiments of the present application may be integrated together to form an independent part, or each module may exist separately, or two or more modules may be integrated to form an independent part.

[0141] If the function is implemented in the form of a software function module and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on such an understanding, the technical solution of the present application is essentially or the part that contributes to the prior art or the part of the technical solution can be embodied in the form of a software product, which is stored in a storage medium, including several instructions to enable a computer device (which can be a personal computer, an electronic device, or a network device, etc.) to perform all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes: various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM, Read-Only Memory), a random access memory (RAM, Random Access Memory), a disk or an optical disk. It should be noted that, in this article, the term "include", "include" or any other variant thereof is intended to cover non-exclusive inclusion, so that the process, method, article or device including a series of elements includes not only those elements, but also includes other elements that are not explicitly listed, or also includes elements inherent to such a process, method, article or device. Without more constraints, an element defined by the phrase "comprising a..." does not exclude the existence of other identical elements in the process, method, article or apparatus comprising the element.

[0142] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A method for determining a laser etching path, characterized in that: include: Acquire the area size information of the processing area, the data model of the surface to be etched, and the pattern size information of the array to be etched, wherein the processing area refers to the maximum scanning etching area of ​​the target laser etching system at one position, the data model is a three-dimensional model, the array to be etched refers to an area to be etched, and there are multiple arrays to be etched on the surface to be etched; Based on the region size information, the data model and the pattern size information, clustering the plurality of arrays to be etched to obtain at least one corresponding cluster, wherein each cluster includes at least one array to be etched; Based on the cluster center of each cluster in the at least one cluster, a target laser etching path is determined, wherein the target laser etching system is used to sequentially perform laser etching processing on the plurality of arrays to be etched along the target laser etching path to form corresponding etching arrays.

2. The method for determining a laser etching path according to claim 1, characterized in that: The step of clustering the plurality of arrays to be etched based on the region size information, the data model and the pattern size information to obtain at least one corresponding cluster includes: Based on the array to be etched, a corresponding cluster to be split is formed, wherein before the first splitting process is performed, the cluster to be split includes all the arrays to be etched; Based on the region size information, the data model and at least part of the pattern size information, the cluster to be split is split to form two corresponding split sub-clusters, and based on all the split sub-clusters formed by each splitting process, a set of clusters to be determined is formed; Determining whether to continue splitting processing based on at least part of the region size information, the data model, and the pattern size information; When it is necessary to continue the splitting process, a split sub-cluster is determined from all the split sub-clusters included in the pending cluster set as a target split sub-cluster; The target split sub-cluster is used as a new cluster to be split, and the steps of splitting the cluster to be split based on the region size information, the data model and at least part of the pattern size information are executed in a reverse manner to form two corresponding split sub-clusters, and forming a pending cluster set based on all the split sub-clusters formed by each splitting process, until there is no need to continue the splitting process, and each split sub-cluster included in the pending cluster set is used as a clustering cluster.

3. The method for determining a laser etching path according to claim 2, characterized in that: The step of splitting the cluster to be split based on the region size information, the data model and at least part of the pattern size information to form two corresponding split sub-clusters, and forming a cluster set to be determined based on all the split sub-clusters formed by each splitting process, comprises: Determining two pending splitting centers in the to-be-split cluster; Based on the position coordinates of each array to be etched in the data model, each array to be etched in the cluster to be split is respectively assigned to a pending set corresponding to a pending splitting center that is closest to the array to be etched, so as to form two corresponding pending sets; For each of the pending sets, based on the position coordinates of each array to be etched in the pending set, the center position coordinates of each array to be etched in the pending set are determined; Determining whether to continue the allocation process based on the two center position coordinates corresponding to the two pending sets and the two pending split centers; When it is necessary to continue the allocation process, the positions corresponding to the two center position coordinates corresponding to the two pending sets are used as two new pending splitting centers, so as to perform the allocation process on each array to be etched in the cluster to be split based on the position coordinates of each array to be etched in the data model, so as to allocate it to the pending set corresponding to the nearest pending splitting center, so as to form the corresponding two pending sets; When there is no need to continue the allocation process, the two pending sets formed by the last allocation process are used as the corresponding two split sub-clusters, and a pending cluster set is formed based on all the split sub-clusters formed by each split process.

4. The method for determining a laser etching path according to claim 3, characterized in that: The step of determining whether to continue the allocation process based on the two center position coordinates corresponding to the two pending sets and the two pending split centers includes: Determine whether the two center position coordinates corresponding to the two pending sets are consistent with the position coordinates corresponding to the two pending split centers; When the two center position coordinates corresponding to the two pending sets are consistent with the position coordinates corresponding to the two pending split centers, it is determined that there is no need to continue the allocation process; When the two center position coordinates corresponding to the two pending sets are inconsistent with the position coordinates corresponding to the two pending split centers, it is determined that the allocation process needs to be continued.

5. The method for determining a laser etching path according to claim 2, characterized in that: The step of determining whether to continue splitting processing based on at least part of the region size information, the data model and the pattern size information comprises: For each split sub-cluster in the pending cluster set, respectively determine whether the distance between the position coordinates of each array to be etched in the split sub-cluster in the data model and the center position coordinates of the split sub-cluster in the data model matches the region size information and the pattern size information, wherein matching the region size information and the pattern size information means that the region to be etched determined based on the corresponding position coordinates and pattern size information of the array to be etched is covered by the region determined based on the center position coordinates and region size information corresponding to the split sub-cluster, and in the process of determining the region, the data model is rotated so that the normal vector of the center position corresponding to the split sub-cluster on the surface to be etched is rotated to be parallel to the target coordinate axis of the data model to determine the region; When each of the to-be-etched arrays in each of the split sub-clusters matches the region size information and the pattern size information, determining that the splitting process does not need to be continued; When each of the to-be-etched arrays in each of the split sub-clusters does not match the region size information and the pattern size information, it is determined that the splitting process needs to be continued.

6. The method for determining a laser etching path according to claim 2, characterized in that: The step of determining, when it is necessary to continue the splitting process, a split sub-cluster from all the split sub-clusters included in the pending cluster set as a target split sub-cluster comprises: When it is necessary to continue the splitting process, for each split sub-cluster included in the pending cluster set, based on the distance between the position coordinates of each array to be etched in the split sub-cluster in the data model and the center position coordinates of the split sub-cluster in the data model, determining the splitting error parameter of the split sub-cluster; In each split sub-cluster included in the pending cluster set, a split sub-cluster with a maximum split error parameter is determined as a target split sub-cluster.

7. The method for determining a laser etching path according to claim 6, characterized in that: The step of determining, for each split sub-cluster included in the pending cluster set, when it is necessary to continue the splitting process, a splitting error parameter of the split sub-cluster based on the distance between the position coordinates of each array to be etched in the split sub-cluster in the data model and the center position coordinates of the split sub-cluster in the data model, comprises: When it is necessary to continue the splitting process, for each split sub-cluster included in the pending cluster set, based on the distance between the position coordinates of each array to be etched in the split sub-cluster in the data model and the center position coordinates of the split sub-cluster in the data model, classify each array to be etched in the split sub-cluster to obtain the first type of array to be etched and the second type of array to be etched corresponding to the split sub-cluster; For each split sub-cluster, based on the distance between the position coordinates of each to-be-etched array in the first type to-be-etched array corresponding to the split sub-cluster in the data model and the center position coordinates of the split sub-cluster in the data model, determine a first error parameter corresponding to the split sub-cluster; For each split sub-cluster, based on the distance between the position coordinates of each to-be-etched array in the second type to-be-etched array corresponding to the split sub-cluster in the data model and the center position coordinates of the split sub-cluster in the data model, determine the second error parameter corresponding to the split sub-cluster; For each split sub-cluster, a split error parameter of the split sub-cluster is determined based on the first error parameter and the second error parameter corresponding to the split sub-cluster.

8. The method for determining a laser etching path according to claim 7, characterized in that: The step of determining, for each split sub-cluster, a split error parameter of the split sub-cluster based on the first error parameter and the second error parameter corresponding to the split sub-cluster, comprises: Determining a preset distance weight coefficient, wherein the distance weight coefficient is greater than or equal to 1; For each split subcluster, the second error parameter corresponding to the split subcluster is weighted based on the distance weight coefficient, and the weighted result and the first error parameter corresponding to the split subcluster are summed to obtain the split error parameter of the split subcluster.

9. A laser etching path determination device, characterized in that: include: An etching information acquisition module is used to acquire the area size information of the processing area, the data model of the surface to be etched, and the pattern size information of the array to be etched, wherein the processing area refers to the maximum scanning etching area of ​​the target laser etching system at one position, the data model is a three-dimensional model, the array to be etched refers to an area to be etched, and there are multiple arrays to be etched on the surface to be etched; An etching array clustering module, used for clustering the plurality of arrays to be etched based on the region size information, the data model and the pattern size information to obtain at least one corresponding cluster, wherein each cluster includes at least one array to be etched; The etching path determination module is used to determine the target laser etching path based on the cluster center of each cluster in the at least one cluster, wherein the target laser etching system is used to perform laser etching processing on the multiple arrays to be etched in sequence along the target laser etching path to form corresponding etching arrays.

10. An electronic device, characterized in that: include: Memory for storing computer programs; A processor connected to the memory is used to execute the computer program stored in the memory to implement the laser etching path determination method described in any one of claims 1-8.

11. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a computer program, and when the computer program is run, the laser etching path determination method according to any one of claims 1 to 8 is executed.

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