Continuous chemical vapor deposition apparatus and method

Abstract

The invention relates to the technical field of chemical vapor deposition, in particular to continuous chemical vapor deposition equipment and a deposition method. The equipment comprises a main body device and a transmission device arranged in the main body device, wherein the main body device is provided with a preparation chamber, a reaction chamber and a heat treatment chamber which are sequentially connected through the transmission device; the gas supporting device is connected with the main body device and is used for providing a gas environment for the main body device; the reaction container can be arranged in the main body device and is driven by the transmission device to switch positions among the preparation chamber, the reaction chamber and the heat treatment chamber, and the gas supporting device can be connected with the reaction container located in any one of the preparation chamber, the reaction chamber and the heat treatment chamber, so that the gas supporting device can support the reaction container in any one of the preparation chamber, the reaction chamber and the heat treatment chamber. And a corresponding gas environment is provided for the reaction container. According to the continuous chemical vapor deposition equipment and the deposition method disclosed by the invention, the production efficiency of deposited products can be improved.

Description

Technical Field

[0001] The present disclosure relates to the technical field of chemical vapor deposition, and in particular to a continuous chemical vapor deposition device and a continuous chemical vapor deposition method. Background Art

[0002] Silicon carbide is a representative ceramic material that is widely used throughout the industrial field due to its excellent physical, chemical and electrical properties.

[0003] In recent years, as the development of semiconductor processing components using silicon carbide materials has been actively progressing, the importance of silicon carbide materials has been increasing. In particular, silicon carbide materials are widely used as components for etching processes in semiconductor process components due to their high plasma resistance.

[0004] The traditional method of manufacturing silicon carbide materials for semiconductor etching process parts is to use chemical vapor deposition to manufacture silicon carbide, because this method cannot meet the quality and performance requirements.

[0005] In the process of chemical vapor deposition of silicon carbide, a mixture of Si-containing gas such as SiH4, SiCl2, SiCl4 and C-containing gas such as C2H2, CH4, C3H8 is used as raw material gas, or a single gas such as CH3SiCl3, CH3SiH3, (CH3)3SiH) is used as raw material for deposition. In the prior art, the silicon carbide material manufactured by chemical vapor deposition has excellent quality, but low productivity. Summary of the invention

[0006] In order to solve or at least partially solve the above technical problems, the present disclosure provides a continuous chemical vapor deposition device and a deposition method.

[0007] The present disclosure provides a continuous chemical vapor deposition device, comprising:

[0008] A main device and a transmission device arranged in the main device, wherein the main device has a preparation chamber, a reaction chamber and a heat treatment chamber connected in sequence by the transmission device;

[0009] A gas support device, connected to the main device, and used to provide a gas environment for the main device;

[0010] The reaction container can be arranged in the main device and, driven by the transmission device, switch positions between the preparation chamber, the reaction chamber and the heat treatment chamber. The gas support device can establish a connection with the reaction container located in any one of the preparation chamber, the reaction chamber and the heat treatment chamber and provide a corresponding gas environment for the reaction container.

[0011] Optionally, there are at least two reaction vessels;

[0012] One reaction container is disposed in the reaction chamber to perform chemical vapor deposition, and another reaction container is disposed in the preparation chamber;

[0013] The transport device is used to move the reaction container that has completed the deposition operation from the reaction chamber to the heat treatment chamber;

[0014] The transport device is also used to move the reaction container that has completed the preparation operation from the preparation chamber to the reaction chamber.

[0015] Optionally, the transmission device comprises:

[0016] Guide rails and push-pull devices;

[0017] The reaction container is arranged on the guide track, and the push-pull device is used to push the reaction container along the guide track to switch the position between the preparation chamber, the reaction chamber and the heat treatment chamber.

[0018] Optionally, the guide track comprises:

[0019] A plurality of rollers are laid in sequence and at intervals along the length direction of the guide track;

[0020] A fixing component is connected to the roller, and the fixing component rotatably fixes two ends of the roller;

[0021] The rollers are used to provide rolling friction when the reaction container moves on the guide rails.

[0022] Optionally, the push-pull device comprises:

[0023] A push-pull drive and a push-pull rod disposed on the push-pull drive, wherein the push-pull rod is divided into a push rod and a pull rod, and the push rod and the pull rod can be detachably connected to two opposite sides of the reaction container respectively;

[0024] The pushing rod and the pulling rod are used to provide a pushing force and a pulling force for the reaction container respectively, so that the reaction container moves along the guide track.

[0025] Optionally, the reaction container is provided with a quick release device for connecting with the push-pull device;

[0026] The quick release device includes:

[0027] A connecting cover body is installed on the reaction container, and a connecting cavity is formed between the connecting cover body and the reaction container. The connecting cover body is provided with a connecting hole communicating with the connecting cavity;

[0028] The head end of the push-pull rod has a card joint matching the shape of the connection hole, the connection hole is used for the push-pull rod to connect, and the push-pull driver can drive the push-pull rod to rotate along its own circumference so that the card joint is inserted into the connection cavity.

[0029] Optionally, it also includes:

[0030] The gate valve device is arranged in the main device and located on both sides of the reaction chamber, and is used to separate the reaction chamber from the preparation chamber and / or the heat treatment chamber.

[0031] Optionally, the gate valve device comprises:

[0032] Gate and lifting drive connected thereto;

[0033] The bottom of the gate matches the shape of the roller, and the lifting drive is used to drive the gate to rise and fall, and when the gate is lowered, the gate is engaged with the roller.

[0034] Optionally, a gas interface is provided on the reaction container; the gas support device is provided beside the main device and comprises:

[0035] Gas pipelines and docking mechanisms connected to the gas pipelines;

[0036] The docking mechanism is used to drive the gas pipeline to approach or move away from the reaction container so that the head end of the gas pipeline is connected to or disconnected from the gas interface of the reaction container.

[0037] Optionally, the inner diameter of the outermost part of the gas interface gradually decreases from the outside to the inside to guide the gas pipeline.

[0038] Optionally, the main body device has a first through hole, a second through hole and a third through hole corresponding to the preparation chamber, the reaction chamber and the heat treatment chamber respectively;

[0039] When the reaction container is located in the preparation room, the gas interface faces the first through hole;

[0040] When the reaction container is located in the reaction chamber, the gas interface faces the second through hole;

[0041] When the reaction container is located in the heat treatment chamber, the gas interface faces the third through hole.

[0042] Optionally, a continuous chemical vapor deposition apparatus is used to deposit silicon carbide and its derivatives.

[0043] The present disclosure also provides a continuous chemical vapor deposition method, which is applied to the aforementioned continuous chemical vapor deposition device, comprising the following steps:

[0044] Placing the reaction container in the preparation room of the main device;

[0045] The atmosphere in the preparation room, the reaction container and the reaction chamber of the main device is constructed by a gas support device;

[0046] Moving the reaction container into the reaction chamber via a transmission device;

[0047] The reaction vessel is supplied with reaction gas through a gas support device to carry out a chemical vapor deposition reaction;

[0048] The atmosphere in the heat treatment chamber of the main device is constructed by means of a gas support device;

[0049] After the reaction is completed, the reaction container is moved to the heat treatment chamber by a transmission device for heat treatment or temperature reduction treatment.

[0050] After the step of moving the reaction container into the reaction chamber via the transport device, the following steps are also included:

[0051] placing another reaction container in the preparation room;

[0052] After the step of moving the reaction container to the thermal treatment chamber, the step further includes:

[0053] Moving another reaction container into the reaction chamber via a conveying device;

[0054] The reaction gas is supplied to another reaction container through the gas support device to carry out chemical vapor deposition reaction.

[0055] Compared with the prior art, the continuous chemical vapor deposition equipment disclosed in the present invention can allocate the three production processes of pretreatment, deposition reaction and heat treatment to different stations by constructing independent preparation chambers and heat treatment chambers, thereby realizing continuous production and processing. Since a transmission device is provided, the reaction vessel can be moved between the three chambers of the preparation chamber, reaction chamber and heat treatment chamber. This significantly improves convenience. Through the above design, the continuous chemical vapor deposition equipment and method provided by the present invention can significantly improve the production efficiency of semiconductor materials in the field of chemical vapor deposition compared with the intermittent equipment and methods of the prior art. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] In order to more clearly illustrate the embodiments of the present disclosure, the following briefly introduces the relevant drawings. It is understood that the drawings described below are only used to illustrate some embodiments of the present disclosure, and a person skilled in the art can also obtain many other technical features and connection relationships not mentioned in this document based on these drawings.

[0057] Figure 1 is a three-dimensional schematic diagram of a continuous chemical vapor deposition apparatus according to an embodiment of the present disclosure;

[0058] Figure 2 is a longitudinal cross-sectional schematic diagram of a continuous chemical vapor deposition apparatus according to an embodiment of the present disclosure;

[0059] Figure 3is a longitudinal cross-sectional schematic diagram of a continuous chemical vapor deposition apparatus according to an embodiment of the present disclosure when a reaction container is arranged in a preparation chamber of a main device;

[0060] Figure 4 is a longitudinal cross-sectional schematic diagram of a continuous chemical vapor deposition apparatus according to an embodiment of the present disclosure when constructing an atmosphere in a preparation chamber;

[0061] Figure 5 is a longitudinal cross-sectional schematic diagram of a continuous chemical vapor deposition apparatus according to an embodiment of the present disclosure when a reaction container is moved from a preparation chamber into a reaction chamber;

[0062] Figure 6 is a schematic cross-sectional view of a continuous chemical vapor deposition device according to an embodiment of the present disclosure when performing a chemical vapor deposition operation;

[0063] Figure 7 is a longitudinal cross-sectional schematic diagram of a continuous chemical vapor deposition device according to an embodiment of the present disclosure when performing a chemical vapor deposition operation;

[0064] Figure 8 is a longitudinal cross-sectional schematic diagram of a continuous chemical vapor deposition apparatus according to an embodiment of the present disclosure when a reaction container is moved from a reaction chamber into a heat treatment chamber;

[0065] Fig. 9 It is a longitudinal cross-sectional schematic diagram of a continuous chemical vapor deposition device according to an embodiment of the present disclosure when two reaction containers are provided, and the two reaction containers are respectively located in a preparation chamber and a reaction chamber;

[0066] Fig.10 It is a longitudinal cross-sectional schematic diagram of a continuous chemical vapor deposition device according to an embodiment of the present disclosure when two reaction containers are provided, and the two reaction containers are respectively located in a reaction chamber and a heat treatment chamber;

[0067] Fig.11 It is a three-dimensional schematic diagram of a continuous chemical vapor deposition device according to an embodiment of the present disclosure when a portion of shielding is removed to expose a reaction container;

[0068] Fig.12 is a schematic cross-sectional view of a continuous chemical vapor deposition device according to an embodiment of the present disclosure when the gate valve is opened;

[0069] Fig.13 It is a partially enlarged cross-sectional schematic diagram of a continuous chemical vapor deposition device near a gas interface according to an embodiment of the present disclosure.

[0070] Description of reference numerals:

[0071] 1. Main device; 11. Preparation chamber; 111. First through hole; 12. Reaction chamber; 121. Second through hole; 13. Heat treatment chamber; 131. Third through hole; 2. Transmission device; 21. Guide rail; 211. Fixing component; 212. Roller; 22. Push rod; 23. Pull rod; 3. Gas support device; 4. Reaction container; 41. Quick release device; 411. Connecting cover; 412. Connecting hole; 413. Connecting cavity; 42. Gas interface; 5. Gate valve device; 51. Gate; 52. Lifting drive. DETAILED DESCRIPTION

[0072] In the prior art, chemical vapor deposition equipment usually has a reaction chamber, and a gas support device is connected to the reaction chamber. The gas support device mixes the raw materials used in the process with other process gases and supplies them to the reactor in the form of gas phase under the premise of meeting the process conditions. The reactor thermally decomposes the supplied mixed gas under high temperature and constant atmosphere. Silicon carbide is deposited on the substrate pre-set in the reaction chamber. The gas support device often also includes an exhaust mechanism for exhausting by-products and excess mixed gas generated during the chemical vapor deposition process.

[0073] In the prior art, the silicon carbide material manufactured by chemical vapor deposition has excellent quality, but low productivity. In view of this, the inventors of the present disclosure provide a continuous chemical vapor deposition device and related methods to solve the above problems.

[0074] Several specific embodiments of the present disclosure are described in detail below in conjunction with the accompanying drawings.

[0075] One embodiment of the present disclosure provides a continuous chemical vapor deposition device, see Figure 1 As shown, it includes:

[0076] A main device 1 and a transmission device 2 disposed in the main device 1, wherein the main device 1 has a preparation chamber 11, a reaction chamber 12 and a heat treatment chamber 13 connected in sequence via the transmission device 2;

[0077] The gas support device 3 is connected to the main device 1 and is used to provide a gas environment for the main device 1 .

[0078] See also Figure 2 As shown, it also includes a reaction container 4, which can be arranged in the main device 1 and switched between the preparation chamber 11, the reaction chamber 12 and the heat treatment chamber 13 under the drive of the transmission device 2. The gas support device 3 can establish a connection with the reaction container 4 located in any one of the preparation chamber 11, the reaction chamber 12 and the heat treatment chamber 13, and provide a corresponding gas environment for the reaction container 4.

[0079] Among the three spaces possessed by the main device 1:

[0080] The preparation chamber 11 is used to fix and install the substrate by using a fixture to prepare for the chemical vapor deposition process under the premise of matching the required production quantity.

[0081] The reaction chamber 12 is similar to conventional chemical vapor deposition equipment.

[0082] The heat treatment chamber 13 can perform heat treatment on chemical vapor deposition products such as silicon carbide to control and improve the purity level of the product. The heat treatment chamber 13 is also convenient for quickly harvesting the product after the heat treatment. The gas support device 3 can provide the required gas for the preparation chamber 11, the reaction chamber 12 and the heat treatment chamber 13. The gas support device 3 can also include an exhaust mechanism capable of evacuating.

[0083] In particular, the continuous chemical vapor deposition equipment and method mentioned in the present disclosure can be used to deposit silicon carbide and its derivatives, such as silicon carbide rings, silicon carbide rods, silicon carbide sheets and many other types of silicon carbide products.

[0084] The inventors of the present disclosure have found through research that in the prior art, chemical vapor deposition equipment generally only has one reaction chamber 12 and follows the following process:

[0085] 1. Place the substrate in the reaction chamber 12;

[0086] 2. Through the gas support device 3, the reaction chamber 12 is evacuated and a mixed gas is introduced to establish an atmosphere in the reaction chamber 12;

[0087] 3. Heating the reaction chamber 12 so that the mixed gas reacts and is deposited on the substrate;

[0088] 4. After deposition is completed, maintain the atmosphere for subsequent heat treatment;

[0089] 5. Slowly lower the temperature of the reaction chamber 12 to room temperature;

[0090] 6. Take out the reaction product.

[0091] It is not difficult to see that the above steps are intermittent. The reaction chamber 12 needs to continuously cycle through a heating-cooling process. Moreover, in steps 1, 5, and 6, the gas support device 3 does not need to supply reaction raw material gas, and steps 1 and 6 even require that the gas in the reaction chamber 12 be replaced with an air environment for operation. These result in the heating device and the gas support device 3 of the reaction chamber 12 not being fully utilized throughout the entire period, thus significantly leading to a decrease in productivity. In other words, in the prior art, the main factor restricting the efficiency of silicon carbide materials in the production process of chemical vapor deposition is that the preheating of the reaction, the atmosphere setting, and the post-heat treatment take up a lot of time.

[0092] Compared with the prior art, based on the continuous chemical vapor deposition equipment provided by the present disclosure, a continuous chemical vapor deposition method is provided, which follows the following process:

[0093] 1. See Figure 3 As shown, the reaction vessel 4 is arranged in the preparation chamber 11 of the main device 1. In this process, the substrate for manufacturing the silicon carbide material can be stacked by using a fixture. Then, preheating can be performed and a vacuum can be created in the reaction vessel 4 to adjust the pressure difference so as to perform atmosphere synchronization later.

[0094] 2. See Figure 4 As shown, the atmosphere in the preparation chamber 11, the reaction vessel 4 and the reaction chamber 12 of the main device 1 is constructed by the gas support device 3; in this step, the airtightness can be improved by sealing the connection between the preparation chamber 11 and the reaction chamber 12 and the outside world.

[0095] 3. See Figure 5 As shown, the reaction container 4 is moved into the reaction chamber 12 through the transmission device 2; at this time, the preparation chamber 11 is empty, and the next reaction container 4 can enter and perform atmosphere preparation and preheating.

[0096] 4. See Figure 6 As shown, the reaction gas is supplied to the reaction container 4 through the gas support device 3 to carry out the chemical vapor deposition reaction; in this step, the reaction container 4 can be heated by the main device 1 so that the reaction gas can fully carry out the deposition reaction.

[0097] 5. While or shortly after the deposition reaction, see Figure 7 As shown, the atmosphere in the heat treatment chamber 13 of the main device 1 can also be synchronously constructed by the gas support device 3;

[0098] 6. After the reaction is completed, see Figure 8 As shown, the reaction vessel 4 is moved to the heat treatment chamber 13 by the transport device 2 to perform a heat treatment or cooling process before the reaction product is shipped out of the factory. In addition, some additional heat treatments, such as recrystallization, can be performed in the heat treatment chamber 13 to control the resistivity and transmittance of the product. During the heat treatment process, the reaction chamber 12 is vacant and can be used for the next reaction vessel 4 to enter and undergo a chemical vapor deposition reaction.

[0099] From the above process, it can be seen that the continuous chemical vapor deposition equipment disclosed in the present invention can allocate the three production processes of pretreatment, deposition reaction and heat treatment to different stations by constructing independent preparation chamber 11 and heat treatment chamber 13, thereby realizing continuous production and processing. Since the transmission device 2 is provided, the reaction container 4 can be moved between the three chambers of the preparation chamber 11, the reaction chamber 12 and the heat treatment chamber 13. This significantly improves the convenience. In particular, see Fig. 9 As shown, there can be at least two reaction containers 4;

[0100] One reaction vessel 4 is disposed in the reaction chamber 12 for chemical vapor deposition, and another reaction vessel 4 is disposed in the preparation chamber 11;

[0101] See also Fig.10 As shown, the transport device 2 is used to move the reaction container 4 that has completed the deposition operation from the reaction chamber 12 to the heat treatment chamber 13;

[0102] The transport device 2 is also used to move the reaction container 4 that has completed the preparation operation from the preparation chamber 11 to the reaction chamber 12 .

[0103] Based on the above improvements, this embodiment also further provides a continuous chemical vapor deposition method, which follows the following process:

[0104] After the aforementioned step of moving the reaction container 4 into the reaction chamber 12 via the transmission device 2, the following steps are also included:

[0105] See also Fig. 9 As shown, another reaction container 4 is disposed in the preparation chamber 11;

[0106] After the step of moving the reaction container 4 to the heat treatment chamber 13, the method further includes:

[0107] See also Fig.10 As shown, another reaction container 4 is moved into the reaction chamber 12 through the transport device 2;

[0108] See also Figure 6 As shown, a reaction gas is supplied to another reaction container 4 through a gas support device 3 to perform a chemical vapor deposition reaction.

[0109] Through the above design, the continuous chemical vapor deposition equipment and method provided by the present disclosure can significantly improve the production efficiency of semiconductor materials in the field of chemical vapor deposition compared to the intermittent equipment and methods of the prior art. When producing a silicon carbide product with the same deposition thickness, it can be used as a batch process. See the table below:

[0110]

[0111] After evaluation and testing, the following conclusions can be drawn:

[0112] Example 1: When producing 1mm products at a deposition rate of 20um / h process conditions, an intermittent chemical vapor deposition device can produce 4.7 batches of products per month.

[0113] Example 2: When producing 1mm products at a deposition rate of 20um / h, the continuous chemical vapor deposition equipment can produce 10.0 batches of products per month, and the productivity is increased by 2.1 times.

[0114] Example 3: When producing 1mm products at a deposition rate of 30um / h, the intermittent chemical vapor deposition equipment can produce 5.6 batches of products per month.

[0115] Example 4: When producing 1mm products at a deposition rate of 30um / h, the continuous chemical vapor deposition equipment can produce 15 batches of products per month, and the productivity is increased by 2.7 times.

[0116] In another embodiment of the present disclosure, a further improvement is proposed for the aforementioned continuous chemical vapor deposition apparatus, wherein: Fig.11 As shown, the transmission device 2 includes:

[0117] Guide rail 21 and push-pull device;

[0118] The reaction container 4 is disposed on the guide rail 21 , and the push-pull device is used to push the reaction container 4 along the guide rail 21 to switch positions among the preparation chamber 11 , the reaction chamber 12 and the heat treatment chamber 13 .

[0119] The technical effect of the guide rail 21 and the push-pull device is mainly reflected in improving the automation and continuity of the production process. By setting the guide rail 21 and the push-pull device, the movement and switching of the reaction container 4 can be easily achieved. Specifically, this setting allows the reaction container 4 to be smoothly, quickly and accurately transferred between different studios, thereby reducing the need for manual operation and improving production efficiency and safety.

[0120] Further, the guide track 21 comprises:

[0121] A plurality of rollers 212 are laid out in sequence and at intervals along the length direction of the guide track 21;

[0122] The fixing member 211 is connected to the roller 212, and the fixing member 211 rotatably fixes both ends of the roller 212;

[0123] When the reaction container 4 moves on the guide track 21 , the rollers 212 are used to provide rolling friction.

[0124] Since the temperature of the roller 212 and the fixing member 211 is relatively high, graphite or CMC (ceramic matrix composite) materials may be used. Such materials can withstand high temperature environments exceeding 1500°C and are superior to high temperature alloys in terms of high temperature resistance, oxidation resistance, strength and rigidity, density, and corrosion resistance.

[0125] The multiple rollers 212 and the fixing member 211 provided by the guide track 21 enable the rolling friction provided by the rollers 212 to provide support for the movement of the reaction vessel 4 on the track. The rolling friction provided by the rollers 212 is much smaller than the sliding friction, which helps to reduce energy consumption and makes the movement of the reaction vessel 4 smoother and more efficient. The rollers 212 are laid in sequence at intervals along the length direction of the track, and this evenly distributed support point can enhance the stability of the entire system and reduce the vibration caused by uneven loads. Since the wear of the reaction vessel 4 by the rolling friction is less than the sliding friction, the service life of the reaction vessel 4 can be effectively extended.

[0126] However, see Figure 2 As shown, the push-pull device includes:

[0127] A push-pull driver (not shown) and a push-pull rod disposed on the push-pull driver, wherein the push-pull rod is divided into a push rod 22 and a pull rod 23, and the push rod 22 and the pull rod 23 can be detachably connected to opposite sides of the reaction container 4 respectively;

[0128] The pushing rod 22 and the pulling rod 23 are used to provide a pushing force and a pulling force for the reaction container 4 , respectively, so that the reaction container 4 moves along the guide track 21 .

[0129] The push-pull rod can be pushed by various types of power sources that can provide linear motion in the prior art, such as a gas rod, a hydraulic rod or a motor, etc. In this embodiment, the type of the push-pull driver does not need to be limited.

[0130] Since the push rod 22 and the pull rod 23 can be detachably connected to the two sides of the reaction vessel 4, the reaction vessel 4 can be moved no matter which direction is blocked. When the preparation chamber 11, the reaction chamber 12 and the heat treatment chamber 13 are separated, this design can well ensure that the reaction vessel 4 can still move in the required manner. In addition, when it is necessary to close the various spaces in the main device 1, the push-pull rods can be moved out of the main device 1, which is less disturbing to the process than other types of transmission devices 2 that need to be set in the main device 1, and is less likely to be damaged due to large temperature changes.

[0131] For matching purposes, see Figure 2 Combination Fig.11As shown, the reaction container 4 is provided with a quick release device 41 for connecting with the push-pull device;

[0132] The quick release device 41 comprises:

[0133] A connecting cover 411 is installed on the reaction container 4, and a connecting cavity 413 is formed between the connecting cover 411 and the reaction container 4. A connecting hole 412 communicating with the connecting cavity 413 is provided on the connecting cover 411;

[0134] The head end of the push-pull rod has a card joint that matches the shape of the connection hole 412. The connection hole 412 is used for the push-pull rod to connect. The push-pull driver can drive the push-pull rod to rotate along its own circumference so that the card joint is inserted into the connection cavity 413.

[0135] The quick release device 41 provides the reaction container 4 with the ability to quickly connect and separate from the push-pull device. Through the cooperation between the card connector and the connection hole 412, the push-pull rod and the reaction container 4 can be quickly connected and separated, which greatly improves the connection efficiency of the device. Moreover, the push-pull driver drives the push-pull rod to rotate, so that the card connector can be inserted into or withdrawn from the connection cavity 413. The connection operation is very simple and can be easily operated in an automated manner. Rapid disassembly and assembly shortens the time required for connection and improves the operating efficiency of the entire continuous production line.

[0136] In another embodiment of the present disclosure, see Figure 1 , Figure 2 As shown, it also includes:

[0137] The gate valve device 5 is arranged in the main device 1 and is located on both sides of the reaction chamber 12 , and is used to separate the reaction chamber 12 from the preparation chamber 11 and / or the heat treatment chamber 13 .

[0138] The gate valve device 5 can effectively control and manage the flow of fluid, thereby ensuring effective isolation between the reaction chamber 12 and the preparation chamber 11 and the heat treatment chamber 13 .

[0139] Specifically, see Fig.12 As shown, the gate valve device 5 comprises:

[0140] A gate 51 and a lifting drive 52 connected thereto;

[0141] See also Figure 4 As shown, the bottom of the gate 51 matches the shape of the roller 212 , and the lifting driver 52 is used to drive the gate 51 to rise and fall, and when the gate 51 descends, the gate 51 is engaged with the roller 212 .

[0142] The gate valve device 5 can provide an effective partition between the reaction chamber 12 and the preparation chamber 11 and the heat treatment chamber 13, which helps to maintain the independent environment in each chamber, so that the heat does not escape and prevents the mixing of gases or other media. The lifting and lowering of the gate 51 controlled by the lifting drive 52 can accurately manage the flow of fluids in the program, thereby achieving fine control of the chemical reaction process. In addition, the matching design of the gate 51 and the roller 212 enhances the barrier airtightness of the gate 51, achieving a better partition effect.

[0143] The gate valve device 5 can be made of materials such as ceramics and CMC to ensure its high temperature resistance. A heat insulation layer made of CMC material can be provided on the gate 51 to isolate the heat between the chambers.

[0144] In another embodiment of the present disclosure, see Figure 6 , Fig.12 and Fig.13 As shown, the reaction container 4 is provided with a gas interface 42; the gas support device 3 is provided beside the main device 1 and includes:

[0145] A gas pipeline and a docking mechanism connected to the gas pipeline (not shown);

[0146] The docking mechanism is used to drive the gas pipeline to approach or move away from the reaction container 4 so that the head end of the gas pipeline is connected to or disconnected from the gas interface 42 of the reaction container 4 .

[0147] The docking mechanism can also be provided by the prior art, and can be used to drive the gas pipeline through various types of power sources that can perform linear motion, such as gas rods, hydraulic rods, or motors. In this embodiment, the type of docking mechanism is also not limited. As long as the gas pipeline can be automatically driven to move to achieve docking, the technical purpose of this embodiment can be achieved. It is worth mentioning that even if the docking is performed manually, the technical purpose of the present disclosure can be basically achieved.

[0148] Further, see Fig.13 As shown, the inner diameter of the outermost part of the gas interface 42 gradually decreases from the outside to the inside, so as to guide the gas pipeline and avoid deviation during docking.

[0149] The docking mechanism can drive the gas pipeline to approach or move away from the reaction vessel 4, so that the head end of the gas pipeline can be flexibly connected or disconnected from the gas interface 42 of the reaction vessel 4 as needed. Through the automated control of the docking mechanism, manual operations can be reduced and the accuracy and repeatability of the operations can be improved. Automated connection and disconnection reduces the risk of gas leakage that may be caused by improper operation. Fast connection and disconnection saves time and improves the working efficiency of the entire system.

[0150] Also, see Figure 1 As shown, the main device 1 has a first through hole 111, a second through hole 121 and a third through hole 131 corresponding to the preparation chamber 11, the reaction chamber 12 and the heat treatment chamber 13 respectively;

[0151] When the reaction container 4 is located in the preparation chamber 11 , the gas interface 42 faces the first through hole 111 ;

[0152] When the reaction container 4 is located in the reaction chamber 12 , the gas interface 42 faces the second through hole 121 ;

[0153] When the reaction container 4 is located in the heat treatment chamber 13 , the gas interface 42 faces the third through hole 131 .

[0154] The design of this technical solution allows the gas interface 42 of the reaction container 4 to be aligned with the corresponding through hole when the reaction container 4 is moved between different working chambers, thereby achieving precise gas flow control. The specific technical effects include: by aligning the gas interface 42 and the corresponding through hole, it is possible to ensure that the gas accurately enters the required working chamber, whether it is the preparation chamber 11, the reaction chamber 12 or the heat treatment chamber 13.

[0155] Finally, it should be noted that those skilled in the art can understand that in order to enable readers to better understand the present disclosure, the embodiments of the present disclosure provide many technical details. However, even without these technical details and various changes and modifications based on the above-mentioned embodiments, the technical solutions claimed for protection by the claims of the present disclosure can be basically realized. Therefore, in practical applications, various changes can be made to the above-mentioned embodiments in form and detail without departing from the spirit and scope of the present disclosure.

Claims

1. A continuous chemical vapor deposition device, characterized in that: include: A main device (1) and a transmission device (2) arranged in the main device (1), wherein the main device (1) comprises a preparation chamber (11), a reaction chamber (12) and a heat treatment chamber (13) which are sequentially connected via the transmission device (2); A gas support device (3), connected to the main device (1), and used to provide a gas environment for the main device (1); The reaction container (4) can be arranged in the main device (1) and, driven by the transmission device (2), switch positions between the preparation chamber (11), the reaction chamber (12) and the heat treatment chamber (13); the gas support device (3) can establish a connection with the reaction container (4) located in any one of the preparation chamber (11), the reaction chamber (12) and the heat treatment chamber (13), and provide a corresponding gas environment for the reaction container (4).

2. The continuous chemical vapor deposition equipment according to claim 1, characterized in that: There are at least two reaction containers (4); One of the reaction containers (4) is arranged in the reaction chamber (12) to carry out chemical vapor deposition, and the other reaction container (4) is arranged in the preparation chamber (11); The transport device (2) is used to move the reaction container (4) that has completed the deposition operation from the reaction chamber (12) to the heat treatment chamber (13); The transmission device (2) is also used to move the reaction container (4) that has completed the preparation operation from the preparation chamber (11) to the reaction chamber (12).

3. The continuous chemical vapor deposition equipment according to claim 2, characterized in that: The transmission device (2) comprises: A guide rail (21) and a push-pull device; The reaction container (4) is arranged on the guide track (21), and the push-pull device is used to push the reaction container (4) along the guide track (21) to switch positions between the preparation chamber (11), the reaction chamber (12) and the heat treatment chamber (13).

4. The continuous chemical vapor deposition equipment according to claim 3, characterized in that: The guide track (21) comprises: A plurality of rollers (212) are laid in sequence and at intervals along the length direction of the guide track (21); A fixing component (211) connected to the roller (212), wherein the fixing component (211) rotatably fixes two ends of the roller (212); When the reaction container (4) moves on the guide track (21), the roller (212) is used to provide rolling friction.

5. The continuous chemical vapor deposition equipment according to claim 3, characterized in that: The push-pull device comprises: A push-pull drive and a push-pull rod disposed on the push-pull drive, wherein the push-pull rod is divided into a push rod (22) and a pull rod (23), and the push rod (22) and the pull rod (23) can be detachably connected to opposite sides of the reaction container (4); The pushing rod (22) and the pulling rod (23) are used to provide a pushing force and a pulling force for the reaction container (4) respectively, so that the reaction container (4) moves along the guide track (21).

6. The continuous chemical vapor deposition equipment according to claim 5, characterized in that: The reaction container (4) is provided with a quick-release device (41) for connecting with the push-pull device; The quick-release device (41) comprises: A connecting cover (411) is installed on the reaction container (4) and forms a connecting cavity (413) between the connecting cover (411) and the reaction container (4). The connecting cover (411) is provided with a connecting hole (412) communicating with the connecting cavity (413); The head end of the push-pull rod has a card connector that matches the shape of the connection hole (412), and the connection hole (412) is used for the push-pull rod to be connected. The push-pull drive can drive the push-pull rod to rotate along its own circumference so that the card connector is inserted into the connecting cavity (413).

7. The continuous chemical vapor deposition equipment according to claim 4, characterized in that: Also includes: A gate valve device (5) is arranged in the main device (1) and is located on both sides of the reaction chamber (12), and is used to separate the reaction chamber (12) from the preparation chamber (11) and / or the heat treatment chamber (13).

8. The continuous chemical vapor deposition equipment according to claim 7, characterized in that: The gate valve device (5) comprises: A gate (51) and a lifting drive (52) connected thereto; The bottom of the gate (51) matches the shape of the roller (212), and the lifting driver (52) is used to drive the gate (51) to rise and fall, and when the gate (51) descends, the gate (51) is engaged with the roller (212).

9. The continuous chemical vapor deposition equipment according to claim 3, characterized in that: The reaction container (4) is provided with a gas interface (42); the gas support device (3) is arranged beside the main device (1) and comprises: A gas pipeline and a docking mechanism connected to the gas pipeline; The docking mechanism is used to drive the gas pipeline to approach or move away from the reaction container (4), so that the head end of the gas pipeline is connected to or disconnected from the gas interface (42) of the reaction container (4); The inner diameter of the outermost part of the gas interface (42) gradually decreases from the outside to the inside to guide the gas pipeline.

10. The continuous chemical vapor deposition equipment according to claim 9, characterized in that: The main body device (1) has a first through hole (111), a second through hole (121) and a third through hole (131) corresponding to the preparation chamber (11), the reaction chamber (12) and the heat treatment chamber (13), respectively; When the reaction container (4) is located in the preparation chamber (11), the gas interface (42) faces the first through hole (111); When the reaction container (4) is located in the reaction chamber (12), the gas interface (42) faces the second through hole (121); When the reaction container (4) is located in the heat treatment chamber (13), the gas interface (42) faces the third through hole (131).

11. The continuous chemical vapor deposition equipment according to claim 1, characterized in that: The continuous chemical vapor deposition equipment is used for depositing silicon carbide and its derivatives.

12. A continuous chemical vapor deposition method, applied to the continuous chemical vapor deposition equipment according to any one of claims 1 to 11, characterized in that: The steps include: Placing a reaction container (4) in the preparation room (11) of the main device (1); The atmosphere in the preparation room (11), the reaction container (4) and the reaction room (12) of the main device (1) is constructed by a gas support device (3); Moving the reaction container (4) into the reaction chamber (12) via the transport device (2); The reaction vessel (4) is supplied with reaction gas through the gas support device (3) to carry out a chemical vapor deposition reaction; By means of a gas support device (3), an atmosphere in a heat treatment chamber (13) of the main device (1) is established; After the reaction is completed, the reaction container (4) is moved to the heat treatment chamber (13) by the transport device (2) for heat treatment or temperature reduction treatment.

13. The continuous chemical vapor deposition method according to claim 12, characterized in that: After the step of moving the reaction container (4) into the reaction chamber (12) via the transmission device (2), the method further comprises the following steps: placing another reaction container (4) in the preparation chamber (11); After the step of moving the reaction container (4) to the heat treatment chamber (13), the method further comprises: Moving the other reaction container (4) into the reaction chamber (12) via the transport device (2); The gas support device (3) supplies reaction gas to the other reaction container (4) to carry out a chemical vapor deposition reaction.

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