Novel silicon wafer drying furnace structure and heating method thereof

Abstract

The invention relates to the technical field of silicon wafer processing equipment, in particular to a novel silicon wafer drying furnace structure and a heating method thereof. Comprising an equipment support, a drying furnace tunnel arranged on the equipment support, a conveying rail module and a hot air unit arranged on the drying furnace tunnel, and the hot air unit is arranged at the bottom of the drying furnace tunnel. The hot air unit comprises a heating device arranged at the outer bottom of the drying furnace tunnel, an air inlet pipe communicated with the heating device, an air outlet module arranged at the inner bottom of the drying furnace tunnel and an air outlet plate arranged at the top of the drying furnace tunnel. The tunnel heating device has the beneficial effects that according to the technical scheme, a novel heating mode is designed, a heating assembly is arranged at the bottom of the tunnel of the drying furnace, air is fed from the bottom, hot air flows from top to bottom, and therefore the hot air in the tunnel of the drying furnace is evenly spread in an inner cavity of the tunnel, and the drying uniformity is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of silicon wafer processing equipment, and in particular to a novel silicon wafer drying furnace structure and a heating method thereof. Background Art

[0002] HIT solar cells are hybrid solar cells made of crystalline silicon substrates and amorphous silicon thin films. The so-called HIT (Heterojunction with intrinsic Thinlayer) structure is to add a layer of non-doped (intrinsic) hydrogenated amorphous silicon thin film between P-type hydrogenated amorphous silicon and n-type hydrogenated amorphous silicon and n-type silicon substrate. The HIT solar photovoltaic cell substrate is mainly a silicon substrate, on which a high-bandgap silicon nanofilm is deposited, and a transparent conductive film is deposited on the surface, and a back surface electric field is set on the back. By optimizing the surface structure of silicon, the optical absorption loss of the transparent conductive oxide layer and the a-Si layer can be reduced.

[0003] When preparing HIT solar photovoltaic cells, the surface of the silicon wafer needs to be dried after the conductive paste is printed. The current practice is to use a drying furnace for heating. The prior art, application number: 2018206261189, is a plug-type silicon wafer drying furnace. The existing drying furnace is heated by hot air entering from the side. This structural heating method is not suitable for the principle of heat flow, which leads to slow heating and drying efficiency. It takes multiple processes to be completely heated, and the application of hot air is poor.

[0004] Therefore, it is necessary to design a new silicon wafer drying furnace structure and heating method to solve the above problems. Summary of the invention

[0005] The purpose of the present invention is to provide a novel silicon wafer drying furnace structure and a heating method thereof to overcome the above-mentioned deficiencies existing in the current prior art.

[0006] In order to achieve the above object, the present invention adopts the following technical solutions:

[0007] A novel silicon wafer drying furnace structure and, which comprises an equipment support, a drying furnace tunnel arranged on the equipment support, a conveying track module placed in the drying furnace tunnel and moving along the drying furnace tunnel, and a hot air unit placed on the drying furnace tunnel, characterized in that: the hot air unit is placed at the bottom of the drying furnace tunnel, the hot air unit comprises a heating device placed at the outer bottom of the drying furnace tunnel, an air inlet pipe connected to the heating device, an air outlet module placed at the bottom of the drying furnace tunnel, and an air outlet plate placed at the top of the drying furnace tunnel, a heating pipe is also arranged at the top of the drying furnace tunnel, the air outlet module is an H-shaped structure, and the air outlet module is a hollow structure, an interface groove connected to the air inlet pipe is opened in the middle position of the air outlet module, and a plurality of groups of evenly arranged air outlet holes are opened on the sides of the two side strips of the air outlet module.

[0008] Preferably, a tooling bracket is also installed on the conveying track module via a slider, and a silicon wafer placement tool is arranged on the tooling bracket at an angle to one side.

[0009] Preferably, the silicon wafer placement tooling is in a right-angle trapezoidal structure, with the board surfaces on both sides having different heights, the top board surface being arranged at an angle, and the two ends of the tooling bracket being arranged on the board surfaces on both sides having different heights.

[0010] Preferably, induction devices are also provided on both sides of the entrance of the drying furnace tunnel.

[0011] A novel silicon wafer drying furnace heating method, characterized in that: comprising the following method: firstly placing the silicon wafer to be dried on a piece placement tool, with one side of the silicon wafer supported against the side edge of the tool;

[0012] The hot air unit is started, and the heating pipe inside the tunnel is continuously heated. The hot air unit provides hot air, which is heated by the heating device from the air inlet pipe and enters the air outlet module;

[0013] Control the ventilation volume of the hot air unit, increase the air pressure inside the outlet module by increasing the ventilation volume, and enhance the outlet airflow of the outlet module;

[0014] The hot air is ejected upward from both sides of the air outlet module, filling the entire tunnel cavity from bottom to top, and continuously transporting the hot air;

[0015] The conveyor track module drives the tooling to move along the tunnel for drying.

[0016] The beneficial effects of the present invention are as follows: the technical solution arranges the heating component at the bottom of the drying furnace tunnel by designing a new heating method, and air is taken in from the bottom, and the hot air flows from top to top, and cooperates with the heating pipe on the top to make the hot air inside the drying furnace tunnel evenly spread over the entire tunnel cavity, thereby improving the drying efficiency and increasing the uniformity of drying; and an H-shaped air outlet module is arranged, and air outlet holes are arranged on both sides of the air outlet module, and the hot air is dissipated from both sides. The internal air pressure is controlled by controlling the air intake, thereby controlling the jet volume of the air outlet hole, thereby ensuring that the hot air can fill the tunnel. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 A side view of a drying furnace tunnel of a novel silicon wafer drying furnace structure and a heating method thereof of the present invention;

[0018] Figure 2 A schematic diagram of a heating device of a novel silicon wafer drying furnace structure and a heating method thereof of the present invention;

[0019] Figure 3 It is a partial structural schematic diagram of a novel silicon wafer drying furnace structure and a heating method thereof of the present invention;

[0020] Figure 4 It is a schematic diagram of an outlet module of a novel silicon wafer drying furnace structure and a heating method thereof of the present invention;

[0021] In the figure: 1. Equipment bracket; 2. Drying furnace tunnel; 3. Conveying track module; 4. Hot air unit; 41. Heating device; 42. Air inlet pipe; 43. Air outlet module; 431. Interface slot; 432. Air outlet; 5. Tool bracket; 51. Silicon wafer placement tool; 6. Induction device. DETAILED DESCRIPTION

[0022] Reference Figures 1 to 4 A novel silicon wafer drying furnace structure comprises an equipment support 1, a drying furnace tunnel 2 arranged on the equipment support, a conveying track module 3 arranged in the drying furnace tunnel and moving along the drying furnace tunnel, and a hot air unit 4 arranged in the drying furnace tunnel;

[0023] The hot air unit 4 is placed at the bottom of the drying furnace tunnel 2, and the hot air unit includes a heating device 41 placed at the outer bottom of the drying furnace tunnel, an air inlet pipe 42 connected to the heating device, an air outlet module 43 placed at the inner bottom of the drying furnace tunnel 2, and an air outlet plate placed at the top of the drying furnace tunnel 2; the air inlet of the hot air unit 4 is placed at the bottom, and air is taken in from the bottom of the drying furnace tunnel, so that the hot air enters from the bottom, and according to the principle of hot air flow, it also flows from the bottom to the top, which conforms to the principle of hot air flow, so that the hot air fills the drying furnace tunnel, and the hot air flows evenly, so as to ensure the balance of the entire internal heat;

[0024] In order to further ensure the uniformity of heat in the internal tunnel, a heating pipe is further arranged at the top of the drying furnace tunnel 2. The heating pipe at the top is used for auxiliary heating, and the bottom is heated from the top. The top of the silicon wafer is also heated, and the bottom of the silicon wafer is directly dried and heated by the hot air. Under the condition of uniform heat, the uniformity of silicon wafer drying is ensured, and the quality of the product and the drying efficiency are improved.

[0025] The air outlet module is an H-shaped structure, and the air outlet module is a hollow structure. An interface groove 431 that is connected to the air inlet pipe is opened in the middle position of the air outlet module, and a plurality of groups of evenly arranged air outlet holes 432 are opened on the sides of the long strips on both sides of the air outlet module; in order to ensure that the hot air can be ejected from the air outlet holes on both sides and expand outward, the air intake of the air inlet pipe is adjusted to control the air pressure ejected from the air outlet holes. Since the diameters of the air outlet holes are consistent, the air outlet volume is consistent. By conveying different hot gases into the air outlet module, the internal air pressure is increased, thereby controlling the amount of airflow out of the air outlet holes. The air outlet holes are placed on both sides, and the hot air flows out from both sides and ejects upward from both sides, thereby ensuring that the hot air can cover the entire drying furnace tunnel cavity;

[0026] A tooling bracket 5 is also installed on the conveying track module 3 through a slider, and a silicon wafer placing tooling 51 is arranged on the tooling bracket at an angle to one side. The silicon wafer placing tooling is a right-angled trapezoidal structure, and the plate surfaces on both sides are at different heights, and the top plate surface is inclined. The two ends of the tooling bracket are respectively arranged on the plate surfaces with different heights on both sides, and the inclination angle of the silicon wafer placing tooling can be adjusted by adjusting the height position. Since some slurry or colloid and other materials still remain on the silicon wafer after the silicon wafer is processed in the previous step, in order to prevent shaking during the transportation process, thereby affecting the silicon wafer touching the side wall of the silicon wafer prevention tooling, the entire tooling is tilted, so that the silicon wafer placed on the tooling is also tilted to support one side, thereby autonomously limiting the positioning, avoiding shaking during the transportation and drying process, ensuring the drying efficiency, and avoiding scratches.

[0027] In order to improve safety, avoid manual injuries and heat loss, and know the progress of transportation, sensing devices 6 are also provided on both sides of the entrance of the drying furnace tunnel; the sensing devices are used to sense operations such as feeding and discharging.

[0028] Heating method of this silicon wafer drying furnace:

[0029] First, place the silicon wafer to be dried on the counter-positioning tooling 51, with one side of the silicon wafer supported against the side edge of the tooling;

[0030] The hot air unit is started, and the heating pipe inside the tunnel is continuously heated. The hot air unit provides hot air, and the hot air is heated from the air inlet pipe through the heating device and enters the air outlet module 43;

[0031] Controlling the ventilation volume of the hot air unit, increasing the air pressure inside the air outlet module 43 by increasing the ventilation volume, and enhancing the air flow of the air outlet module 43;

[0032] The hot air is ejected upward from both sides of the air outlet module 43, filling the entire tunnel cavity from bottom to top, and continuously transporting the hot air;

[0033] The conveyor track module drives the tooling to move along the tunnel for drying.

[0034] The benefits of the present invention are that the technical solution designs a new heating method, sets the heating component at the bottom of the drying furnace tunnel, takes in air from the bottom, and the hot air flows from top to top, and cooperates with the heating pipe on the top to make the hot air inside the drying furnace tunnel evenly spread over the entire tunnel cavity, thereby improving the drying efficiency and increasing the uniformity of drying; and an H-shaped air outlet module is set, and air outlet holes are set on both sides of the air outlet module, and the hot air is dissipated from both sides. The internal air pressure is controlled by controlling the air intake, thereby controlling the jet volume of the air outlet hole, thereby ensuring that the hot air can fill the tunnel.

[0035] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical scheme and inventive concept of the present invention within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A novel silicon wafer drying furnace structure, comprising an equipment support, a drying furnace tunnel arranged on the equipment support, a conveying track module arranged in the drying furnace tunnel and moving along the drying furnace tunnel, and a hot air unit arranged in the drying furnace tunnel, characterized in that: The hot air unit is placed at the bottom of the drying furnace tunnel. The hot air unit includes a heating device placed at the bottom outside the drying furnace tunnel, an air inlet pipe connected to the heating device, an air outlet module placed at the bottom inside the drying furnace tunnel, and an air outlet plate placed at the top of the drying furnace tunnel. A heating pipe is also arranged at the top inside the drying furnace tunnel. The air outlet module is an H-shaped structure, and the air outlet module is a hollow structure. An interface groove that is connected to the air inlet pipe is provided in the middle position of the air outlet module, and a plurality of groups of evenly arranged air outlet holes are provided on the sides of the long strips on both sides of the air outlet module.

2. The novel silicon wafer drying furnace structure according to claim 1 is characterized in that: A tooling bracket is also installed on the conveying track module via a slider, and a silicon wafer placing tool is arranged on the tooling bracket at an angle to one side.

3. The novel silicon wafer drying furnace structure according to claim 2 is characterized in that: The silicon wafer placement tooling is in a right-angle trapezoidal structure, with the board surfaces on both sides at different heights, the top board surface is tilted, and the two ends of the tooling bracket are respectively arranged on the board surfaces at different heights on both sides.

4. The novel silicon wafer drying furnace structure according to claim 1 is characterized in that: Induction devices are also arranged on both sides of the entrance of the drying furnace tunnel.

5. A novel silicon wafer drying furnace heating method according to claims 1-4, characterized in that: The method comprises the following steps: firstly placing the silicon wafer to be dried on a piece placement tool, with one side of the silicon wafer being held against the side edge of the tool; The hot air unit is started, and the heating pipe inside the tunnel is continuously heated. The hot air unit provides hot air, which is heated by the heating device from the air inlet pipe and enters the air outlet module; Control the ventilation volume of the hot air unit, increase the air pressure inside the outlet module by increasing the ventilation volume, and enhance the outlet airflow of the outlet module; The hot air is ejected upward from both sides of the air outlet module, filling the entire tunnel cavity from bottom to top, and continuously transporting the hot air; The conveyor track module drives the tooling to move along the tunnel for drying.

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