TC-SAW resonator for suppressing transverse clutter and preparation method thereof

Abstract

The invention discloses a TC-SAW resonator capable of suppressing transverse clutters and a preparation method thereof. The resonator comprises a piezoelectric substrate; the interdigital transducers are arranged on the piezoelectric substrate, the first interdigital transducer comprises a first bus bar electrode and a plurality of first interdigital electrodes connected with the first bus bar electrode, and the second interdigital transducer comprises a second bus bar electrode and a plurality of second interdigital electrodes connected with the second bus bar electrode; the plurality of first interdigital electrodes and the plurality of second interdigital electrodes are alternately distributed between the first bus electrode and the second bus electrode in parallel along the first direction; the temperature compensation layer covers the interdigital transducer; the clutter suppression structures are distributed at the connecting end of the first interdigital electrode, the free end of the first interdigital electrode, the connecting end of the second interdigital electrode and the free end of the second interdigital electrode, the clutter suppression structures are arranged on the piezoelectric substrate, and the clutter suppression structures are located in the electrode layer where the interdigital transducer is located. According to the TC-SAW resonator, clutters of the TC-SAW resonator can be effectively suppressed.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor device manufacturing, and in particular to a TC-SAW resonator for suppressing lateral noise and a preparation method thereof. Background Art

[0002] With the advancement of communications technology, surface acoustic wave (SAW) filters are gaining widespread application, but they are also facing increasing challenges. TC-SAW (temperature compensated-SAW) filters, among others, combine conventional SAW filters with a temperature compensation layer to reduce the device's temperature coefficient of frequency (TCF), thereby achieving a wider operating temperature window. While their interdigital transducer structure offers advantages such as simple fabrication and high electro-acoustic conversion efficiency, the complexity of the acoustic wave modes excited during use inevitably generates noise, leading to degraded resonator / filter performance. Summary of the Invention

[0003] The object of the present invention is to provide a TC-SAW resonator for suppressing lateral noise and a preparation method thereof, so as to effectively suppress the noise of the resonator and construct a high-performance TC-SAW filter.

[0004] In order to achieve the above-mentioned object, in a first aspect, the present invention provides a TC-SAW resonator for suppressing lateral noise, comprising:

[0005] Piezoelectric substrate;

[0006] an interdigital transducer, the interdigital transducer being disposed on the piezoelectric substrate, the interdigital transducer comprising a first interdigital transducer and a second interdigital transducer, the first interdigital transducer comprising a first bus electrode and a plurality of first interdigital electrodes connected to the first bus electrode, the second interdigital transducer comprising a second bus electrode and a plurality of second interdigital electrodes connected to the second bus electrode, the plurality of first interdigital electrodes and the plurality of second interdigital electrodes being alternately distributed in parallel along a first direction between the first bus electrode and the second bus electrode;

[0007] a temperature compensation layer, wherein the temperature compensation layer covers the interdigital transducer;

[0008] a plurality of clutter suppression structures, wherein the plurality of clutter suppression structures are distributed at the connection end of the first interdigital electrode, the free end of the first interdigital electrode, the connection end of the second interdigital electrode, and the free end of the second interdigital electrode; the clutter suppression structures are arranged on the piezoelectric substrate, and the clutter suppression structures are located in the electrode layer where the interdigital transducer is located.

[0009] Optionally, the noise suppression structure is a metal block, and a cross section of the noise suppression structure in a direction parallel to the surface of the piezoelectric substrate is rectangular.

[0010] Optionally, the clutter suppression structures located at the connection ends of the first interdigital electrodes and the clutter suppression structures located at the free ends of the second interdigital electrodes are spaced apart and distributed on the same straight line along the first direction;

[0011] The noise suppression structures located at the connecting ends of the second interdigital electrodes and the noise suppression structures located at the free ends of the first interdigital electrodes are spaced apart and distributed on the same straight line along the first direction.

[0012] Optionally, the distance between the noise suppression structure located at the connection end of the first interdigital electrode and the first bus electrode is greater than the distance between the noise suppression structure located at the free end of the second interdigital electrode and the first bus electrode;

[0013] The distance between the noise suppression structure located at the connection end of the second interdigital electrode and the second bus electrode is greater than the distance between the noise suppression structure located at the free end of the first interdigital electrode and the second bus electrode.

[0014] Optionally, an edge of the clutter suppression structure located at the free end of the first interdigital electrode is aligned with an edge of the free end of the first interdigital electrode;

[0015] An edge of the noise suppression structure located at the free end of the second interdigital electrode is aligned with an edge of the free end of the second interdigital electrode.

[0016] Optionally, the width of the clutter suppression structures distributed at the connecting ends and free ends of the first interdigital electrodes is equal to the width of the first interdigital electrodes;

[0017] The width of the clutter suppression structures distributed at the connecting ends and free ends of the second interdigital electrodes is equal to the width of the second interdigital electrodes.

[0018] Optionally, the width of the clutter suppression structure distributed at the connecting end and the free end of the first interdigital electrode is greater than the width of the first interdigital electrode;

[0019] The width of the clutter suppression structure distributed at the connecting end and the free end of the second interdigital electrode is greater than the width of the second interdigital electrode.

[0020] Optionally, the material of the clutter suppression structure includes one or more of chromium, copper, platinum, tantalum, titanium and tungsten.

[0021] Optionally, the thickness of the clutter suppression structure is smaller than the thickness of the electrode layer where the interdigital transducer is located.

[0022] In a second aspect, the present invention provides a method for preparing the TC-SAW resonator for suppressing transverse noise according to the first aspect, comprising:

[0023] forming a first photoresist layer on the piezoelectric substrate;

[0024] patterning the first photoresist layer to form a first opening exposing a portion of the surface of the piezoelectric substrate;

[0025] depositing a first metal layer, where the first metal layer covers the first photoresist layer and the surface of the piezoelectric substrate exposed by the first opening;

[0026] removing the first photoresist layer and the first metal layer on the first photoresist layer, and forming a plurality of noise suppression structures on the piezoelectric substrate;

[0027] forming a second photoresist layer on the piezoelectric layer;

[0028] patterning the first photoresist layer to form a second opening exposing a portion of the surface of the piezoelectric substrate and the noise suppression structure;

[0029] depositing a second metal layer, where the second metal layer covers the second photoresist layer, the surface of the piezoelectric substrate exposed by the second opening, and the noise suppression structure;

[0030] removing the second photoresist layer and the second metal layer on the second photoresist layer, and forming an interdigital transducer on the remaining second metal layer on the piezoelectric substrate;

[0031] A temperature compensation layer is formed on the IDT.

[0032] In a third aspect, the present invention provides a TC-SAW filter, which includes the TC-SAW resonator for suppressing lateral noise according to the first aspect.

[0033] The beneficial effects of the present invention are:

[0034] The TC-SAW resonator structure for suppressing lateral noise of the present invention has distributed noise suppression structures arranged between the piezoelectric substrate and the electrode layer at both ends of the first interdigital electrode and the second interdigital electrode. The noise suppression structure can effectively suppress the lateral noise generated between the first bus electrode and the second bus electrode due to reflection resonance.

[0035] Furthermore, the clutter suppression structure of the present invention utilizes a rectangular metal block structure. This distributed metal structure offers greater freedom, making it easy to adjust its size and optimize the clutter suppression effect. Furthermore, by adjusting the position of the clutter suppression structure at non-end points, two low-acoustic-velocity zones can be formed at the ends of the first and second interdigital electrodes near the first and second bus electrodes, respectively, effectively suppressing clutter. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0037] Figure 1a A top view of a TC-SAW resonator for suppressing lateral noise according to embodiment 1 of the present invention is shown.

[0038] Figure 1b for Figure 1a Cross-sectional view along direction B.

[0039] Figure 2 This is a top view of a TC-SAW resonator for suppressing lateral noise according to embodiment 2 of the present invention.

[0040] Figure 3 A top view of a TC-SAW resonator for suppressing lateral noise according to embodiment 3 of the present invention.

[0041] Figure 4 A top view of a TC-SAW resonator for suppressing lateral noise according to embodiment 4 of the present invention.

[0042] Figure 5a-Figure 9b Schematic diagram of the device structure corresponding to each step in a TC-SAW resonator method for suppressing transverse noise according to embodiment 5 of the present invention. DETAILED DESCRIPTION

[0043] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description and drawings. However, it should be noted that the technical solutions of the present invention can be implemented in a variety of different forms and are not limited to the specific embodiments described herein. The drawings are highly simplified and not to exact scale, and are intended solely to facilitate and clearly illustrate the embodiments of the present invention.

[0044] The terms "first", "second", etc. in the specification and claims are used to distinguish between similar elements and are not necessarily used to describe a specific order or chronological sequence. It is to be understood that, where appropriate, these terms used in this manner are interchangeable, for example, to enable the embodiments of the invention described herein to operate in an order other than that described or shown herein. Similarly, if the method described herein comprises a series of steps, the order in which the steps are presented herein is not necessarily the only order in which the steps can be performed, and some of the steps described may be omitted and / or some other steps not described herein may be added to the method. If a component in a particular figure is the same as a component in other figures, although these components can be easily identified in all figures, in order to make the description of the figures clearer, this specification will not mark all the same component numbers in each figure.

[0045] Example 1

[0046] like Figure 1a and Figure 1b As shown, this embodiment provides a TC-SAW resonator for suppressing transverse noise, including:

[0047] Piezoelectric substrate 8;

[0048] An interdigital transducer 1 is provided on the piezoelectric substrate 8. The interdigital transducer 1 includes a first interdigital transducer and a second interdigital transducer. The first interdigital transducer includes a first bus electrode 2 and a plurality of first interdigital electrodes 3 connected to the first bus electrode 2. The second interdigital transducer includes a second bus electrode 4 and a plurality of second interdigital electrodes 5 connected to the second bus electrode 4. The plurality of first interdigital electrodes 3 and the plurality of second interdigital electrodes 5 are alternately distributed in parallel along a first direction between the first bus electrode 2 and the second bus electrode 4. The first direction is the length direction of the first bus electrode 2 (i.e., direction A in FIG1 ).

[0049] a temperature compensation layer 6 , wherein the temperature compensation layer 6 covers the interdigital transducer 1 ;

[0050] Multiple clutter suppression structures 7 are distributed at the connection end of the first interdigital electrode 3, the free end of the first interdigital electrode 3, the connection end of the second interdigital electrode 5, and the free end of the second interdigital electrode 5. The clutter suppression structures 7 are arranged on the piezoelectric substrate 8, and the clutter suppression structures 7 are located in the electrode layer where the interdigital transducer 1 is located.

[0051] In this embodiment, the material of the piezoelectric substrate 8 can be lithium tantalate, lithium niobate or quartz. The material of the piezoelectric layer in this embodiment is preferably lithium niobate; the material of the interdigital transducer 1 preferably includes one or more of titanium, copper, chromium and silver; the material of the temperature compensation layer 6 is preferably silicon dioxide.

[0052] In this embodiment, the noise suppression structure 7 is a metal block, and its cross-section parallel to the surface of the piezoelectric substrate 8 is rectangular. Preferably, the material of the noise suppression structure 7 includes one or more of chromium, copper, platinum, tantalum, titanium, and tungsten. The noise suppression structure 7 can be composed of a single or multiple metal film layers, for example, a single metal film of titanium, chromium, or copper, or a stack of metal films of titanium, chromium, and copper, wherein the first layer is titanium and the second layer is copper.

[0053] In this embodiment, the noise suppression structure 7 located at the connection end of the first interdigital electrode 3 and the noise suppression structure 7 located at the free end of the second interdigital electrode 5 are distributed on the same straight line at intervals along the first direction; the noise suppression structure 7 located at the connection end of the second interdigital electrode 5 and the noise suppression structure 7 located at the free end of the first interdigital electrode 3 are distributed on the same straight line at intervals along the first direction. That is, the distances between the noise suppression structure 7 located at the connection end of the first interdigital electrode 3 and the noise suppression structure 7 located at the free end of the second interdigital electrode 5 and the first bus electrode 2 are equal, the distances between the noise suppression structure 7 located at the connection end of the second interdigital electrode 5 and the noise suppression structure 7 located at the free end of the first interdigital electrode 3 and the second bus electrode 4 are equal, the projections of the noise suppression structure 7 located at the connection end of the first interdigital electrode 3 and the noise suppression structure 7 located at the free end of the second interdigital electrode 5 on a plane perpendicular to the first direction completely overlap, and the projections of the noise suppression structure 7 located at the connection end of the second interdigital electrode 5 and the noise suppression structure 7 located at the free end of the first interdigital electrode 3 on a plane perpendicular to the first direction completely overlap.

[0054] At the same time, the edge of the clutter suppression structure 7 located at the free end of the first interdigital electrode 3 is aligned with the edge of the free end of the first interdigital electrode 3; the edge of the clutter suppression structure 7 located at the free end of the second interdigital electrode 5 is aligned with the edge of the free end of the second interdigital electrode 5.

[0055] The width of the clutter suppression structure 7 distributed at the connecting end and free end of the first interdigital electrode 3 is equal to the width of the first interdigital electrode 3 ; the width of the clutter suppression structure 7 distributed at the connecting end and free end of the second interdigital electrode 5 is equal to the width of the second interdigital electrode 5 .

[0056] Specifically, if Figure 1aAs shown, in this embodiment, the projection of the noise suppression structure 7 on the piezoelectric substrate 8 is rectangular. The noise suppression structures 7 located at the free ends of the first interdigital electrode 3 and the second interdigital electrode 5 are aligned with one side edge of the free ends of the first interdigital electrode 3 and the second interdigital electrode 5, respectively. The widths of the first interdigital electrode 3 and the second interdigital electrode 5 are equal, and the width of the noise suppression structure 7 is equal to the width of the interdigital electrodes. The multiple noise suppression structures 7 are arranged in two linear arrays. One group of noise suppression structures 7 is located near the first bus electrode 2, distributed at the connecting end of the first interdigital electrode 3 and the corresponding position of the free end of the second interdigital electrode 5 in the same straight line. The ends of adjacent noise suppression structures 7 are aligned in the first direction. The other group of noise suppression structures 7 is located near the second bus electrode 4, distributed at the connecting end of the second interdigital electrode 5 and the corresponding position of the free end of the first interdigital electrode 3 in the same straight line. The ends of adjacent noise suppression structures 7 are aligned in the first direction.

[0057] Figure 1b for Figure 1a The cross-section along the B direction is as follows: Figure 1b As shown, the noise suppression structure 7 is located on the piezoelectric substrate 8, and the electrode layer where the IDT 1 is located covers the noise suppression structure 7. That is, the noise suppression structure 7 is located inside the electrode layer where the IDT 1 is located, and the thickness of the noise suppression structure 7 is less than the thickness of the electrode layer where the IDT 1 is located. The noise suppression structure 7 of this embodiment can effectively suppress the lateral noise generated by reflection resonance between the first bus electrode 2 and the second bus electrode 4.

[0058] Example 2

[0059] like Figure 2 As shown, this embodiment provides a TC-SAW resonator for suppressing lateral noise. The difference between this TC-SAW resonator and embodiment 1 is that:

[0060] The width of the clutter suppression structure 7 distributed at the connecting end and free end of the first interdigital electrode 3 is greater than the width of the first interdigital electrode 3; the width of the clutter suppression structure 7 distributed at the connecting end and free end of the second interdigital electrode 5 is greater than the width of the second interdigital electrode 5.

[0061] Specifically, refer to Figure 2In this embodiment, the distribution of the multiple noise suppression structures 7 is the same as in Example 1, still arranged in two linear arrays. The noise suppression structures 7 located at the free ends of the first and second interdigital electrodes 3 and 5 are aligned with one side edge of the free ends of the first and second interdigital electrodes 3 and 5, respectively. However, the width of the entire noise suppression structure 7 is greater than the width of the interdigital electrodes. In this embodiment, the size of the noise suppression structures 7 is adjusted to make them wider than the width of the interdigital electrodes, thereby optimizing the noise suppression effect. Other structural features of the resonator in this embodiment are the same as those in Example 1 and are not further described here.

[0062] Example 3

[0063] like Figure 3 As shown, this embodiment provides a TC-SAW resonator for suppressing lateral noise. The difference between this TC-SAW resonator and embodiment 1 is that:

[0064] The distance between the noise suppression structure 7 located at the connection end of the first interdigital electrode 3 and the first bus electrode 2 is greater than the distance between the noise suppression structure 7 located at the free end of the second interdigital electrode 5 and the first bus electrode 2;

[0065] The distance between the noise suppression structure 7 at the connection end of the second interdigital electrode 5 and the second bus electrode 4 is greater than the distance between the noise suppression structure 7 at the free end of the first interdigital electrode 3 and the second bus electrode 4 .

[0066] Specifically, refer to Figure 3Compared with the resonator structure of Example 1, in this embodiment, the clutter suppression structure 7 located at the free end of the first interdigital electrode 3 and the free end of the second interdigital electrode 5 are aligned with one side edge of the free end of the first interdigital electrode 3 and the free end of the second interdigital electrode 5, respectively. The width of the clutter suppression structure 7 is equal to the width of the corresponding difference electrode, but the position of the clutter suppression structure 7 located at the connecting end of the first interdigital electrode 3 and the connecting end of the second interdigital electrode 5 is changed, wherein the distance between the clutter suppression structure 7 located at the connecting end of the first interdigital electrode 3 and the first bus electrode 2 is greater than the distance between the clutter suppression structure 7 located at the free end of the second interdigital electrode 5 and the first bus electrode 2, and at the same time, the distance between the clutter suppression structure 7 located at the connecting end of the second interdigital electrode 5 and the first bus electrode 2 is greater than the distance between the clutter suppression structure 7 located at the connecting end of the second interdigital electrode 5 and the first bus electrode 2. The distance between the noise suppression structure 7 at the connection end and the second bus electrode 4 is greater than the distance between the noise suppression structure 7 at the free end of the first interdigital electrode 3 and the second bus electrode 4, that is, the adjacent noise suppression structures 7 in the first direction are not completely aligned, but are regularly staggered left and right. The projections of the noise suppression structure 7 at the connection end of the first interdigital electrode 3 and the noise suppression structure 7 at the free end of the second interdigital electrode 5 on a plane perpendicular to the first direction partially overlap, and the projections of the noise suppression structure 7 at the connection end of the second interdigital electrode 5 and the noise suppression structure 7 at the free end of the first interdigital electrode 3 on a plane perpendicular to the first direction partially overlap.

[0067] This embodiment adjusts the position of the clutter suppression structure 7 at the connection ends of the first interdigital electrode 3 and the second interdigital electrode 5 to form two low-acoustic-velocity regions at the ends of the first interdigital electrode 3 and the second interdigital electrode 5, respectively, near the first bus electrode 2 and the second bus electrode 4, thereby effectively suppressing clutter. The other structural features of the resonator of this embodiment are the same as those of Example 1 and are not further described here.

[0068] Example 4

[0069] like Figure 4 As shown, this embodiment provides a TC-SAW resonator for suppressing transverse noise. The difference between this TC-SAW resonator and embodiment 3 is that:

[0070] The width of the clutter suppression structure 7 distributed at the connecting end and free end of the first interdigital electrode 3 is greater than the width of the first interdigital electrode 3; the width of the clutter suppression structure 7 distributed at the connecting end and free end of the second interdigital electrode 5 is greater than the width of the second interdigital electrode 5.

[0071] refer to Figure 4In this embodiment, the distribution of the multiple clutter suppression structures 7 is the same as that in Example 3, and is still distributed in a non-linear array. However, the width of the entire clutter suppression structure 7 is greater than the width of the corresponding interdigital electrode. That is, the width of the clutter suppression structure 7 located at the connecting end and the free end of the first interdigital electrode 3 is greater than the width of the first interdigital electrode 3, and the width of the clutter suppression structure 7 located at the connecting end and the free end of the second interdigital electrode 5 is greater than the width of the second interdigital electrode 5.

[0072] This embodiment effectively suppresses clutter by adjusting the size and position of the clutter suppression structure 7 to form two low-acoustic-velocity regions at the ends of the first interdigital electrode 3 and the second interdigital electrode 5, respectively, near the first bus electrode 2 and the second bus electrode 4. The other structural features of the resonator in this embodiment are the same as those in Example 1 and are not further described here.

[0073] Example 5

[0074] This embodiment provides a method for preparing a TC-SAW resonator for suppressing transverse noise. The method can prepare any TC-SAW resonator for suppressing transverse noise in the above embodiments 1-4. This embodiment uses the resonator structure ( Figure 1a The device structure corresponding to each step in the preparation process is as follows Figure 5a-Figure 9b As shown, Figure 5a 、 Figure 6a 、 Figure 7a 、 Figure 8a and Figure 9a for Figure 1a The cross-section along direction A is shown in the figure. Figure 5b 、 Figure 6b 、 Figure 7b 、 Figure 8b and Figure 9b for Figure 1a Cross-sectional view in the B direction.

[0075] The preparation method specifically comprises:

[0076] like Figure 5a and Figure 5b As shown, a first photoresist layer 9 (negative photoresist forming an inverted trapezoidal shape) is formed on the piezoelectric substrate 8, and the first photoresist layer 9 is patterned to form a first opening exposing a portion of the surface of the piezoelectric substrate 8;

[0077] Then, a first metal layer 10 is deposited, the first metal layer 10 covering the first photoresist layer 9 and the surface of the piezoelectric substrate 8 exposed by the first opening; the material of the first metal layer 10 includes one or more of chromium, copper, platinum, tantalum, titanium and tungsten;

[0078] like Figure 6a and Figure 6bAs shown, the first photoresist layer 9 and the first metal layer 10 on the first photoresist layer 9 are removed, and a plurality of noise suppression structures 7 are formed on the piezoelectric substrate 8;

[0079] like Figure 7a and Figure 7b As shown, a second photoresist layer 11 (negative photoresist forming an inverted trapezoid) is formed on the piezoelectric layer, and the first photoresist layer 9 is patterned to form a second opening exposing a portion of the surface of the piezoelectric substrate 8 and the noise suppression structure 7;

[0080] Then, a second metal layer 12 is deposited, the second metal layer 12 covers the second photoresist layer 11, the surface of the piezoelectric substrate 8 exposed by the second opening, and the noise suppression structure 7; the material of the second metal layer 12 includes one or more of chromium, titanium, copper and silver;

[0081] like Figure 8a and Figure 8b As shown, the second photoresist layer 11 and the second metal layer 12 on the second photoresist layer 11 are removed, and an IDT 1 is formed on the remaining second metal layer 12 on the piezoelectric substrate 8. Referring to FIG1 , the formed IDT 1 includes a first IDT and a second IDT, the first IDT includes a first bus electrode 2 and a plurality of first interdigital electrodes 3 connected to the first bus electrode 2, the second IDT includes a second bus electrode 4 and a plurality of second interdigital electrodes 5 connected to the second bus electrode 4, the plurality of first interdigital electrodes 3 and the plurality of second interdigital electrodes 5 are alternately distributed in parallel along a first direction between the first bus electrode 2 and the second bus electrode 4.

[0082] In this embodiment, the clutter suppression structure 7 and the IDT 1 are both manufactured using a lift-off process.

[0083] like Figure 9a and Figure 9b As shown, a temperature compensation layer 6 is formed on the IDT 1 .

[0084] A deposition process can be used to deposit silicon dioxide on the piezoelectric substrate 8 to form a temperature compensation layer 6. The deposited silicon dioxide layer covers the interdigital transducer 1 and fills the surface of the piezoelectric substrate 8 exposed in the gap between the first interdigital transducer and the second interdigital transducer. Subsequently, the surface of the silicon dioxide layer is flattened to form the temperature compensation layer 6.

[0085] The preparation method of this embodiment is also applicable to the preparation of the resonator structures of Examples 1, 3 and 4. By adjusting the position and size of the first opening when patterning the first photoresist layer 9, the position and size of the noise suppression structure 7 are adjusted to complete the preparation of the corresponding resonator structure.

[0086] Example 6

[0087] This embodiment provides a TC-SAW filter, which includes the TC-SAW resonator for suppressing transverse noise described in any of the above embodiments.

[0088] It should be noted that the various embodiments in this specification are described in a related manner. Similar portions between the various embodiments can be referred to in conjunction with each other. Each embodiment focuses on the differences between the other embodiments. In particular, since the structural embodiments are generally similar to the method embodiments, their description is relatively simple. For related portions, refer to the description of the method embodiments.

[0089] The above description is only a description of the preferred embodiments of the present invention and does not limit the scope of the present invention. Any changes and modifications made by ordinary technicians in the field of the present invention based on the above disclosure shall fall within the scope of protection of the claims.

Claims

1. A TC-SAW resonator for suppressing lateral noise, characterized in that: include: Piezoelectric substrate; An IDT, the IDT is disposed on the piezoelectric substrate, the IDT comprises a first IDT and a second IDT, the first IDT comprises a first bus electrode and a plurality of first interdigital electrodes connected to the first bus electrode, the second IDT comprises a second bus electrode and a plurality of second interdigital electrodes connected to the second bus electrode, the plurality of first interdigital electrodes and the plurality of second interdigital electrodes are alternately distributed in parallel along a first direction between the first bus electrode and the second bus electrode; a temperature compensation layer, wherein the temperature compensation layer covers the interdigital transducer; A plurality of clutter suppression structures are distributed at the connection end of the first interdigital electrode, the free end of the first interdigital electrode, the connection end of the second interdigital electrode and the free end of the second interdigital electrode, the clutter suppression structure is arranged on the piezoelectric substrate, and the clutter suppression structure is located in the electrode layer where the interdigital transducer is located.

2. The TC-SAW resonator for suppressing lateral noise according to claim 1, characterized in that: The noise suppression structure is a metal block, and the cross section of the noise suppression structure in a direction parallel to the surface of the piezoelectric substrate is a rectangle.

3. The TC-SAW resonator for suppressing lateral noise according to claim 2, characterized in that: The clutter suppression structure located at the connection end of the first interdigital electrode and the clutter suppression structure located at the free end of the second interdigital electrode are distributed on the same straight line along the first direction at intervals; The clutter suppression structures located at the connecting ends of the second interdigital electrodes and the clutter suppression structures located at the free ends of the first interdigital electrodes are distributed on the same straight line at intervals along the first direction.

4. The TC-SAW resonator for suppressing lateral noise according to claim 2, characterized in that: The distance between the clutter suppression structure located at the connection end of the first interdigital electrode and the first bus electrode is greater than the distance between the clutter suppression structure located at the free end of the second interdigital electrode and the first bus electrode; The distance between the clutter suppression structure located at the connecting end of the second interdigital electrode and the second bus electrode is greater than the distance between the clutter suppression structure located at the free end of the first interdigital electrode and the second bus electrode.

5. The TC-SAW resonator for suppressing lateral noise according to claim 3 or 4, characterized in that: The edge of the clutter suppression structure located at the free end of the first interdigital electrode is aligned with the edge of the free end of the first interdigital electrode; An edge of the noise suppression structure located at the free end of the second interdigital electrode is aligned with an edge of the free end of the second interdigital electrode.

6. The TC-SAW resonator for suppressing lateral noise according to claim 5, characterized in that: The width of the clutter suppression structure distributed at the connecting end and the free end of the first interdigital electrode is equal to the width of the first interdigital electrode; The width of the clutter suppression structure distributed at the connecting end and the free end of the second interdigital electrode is equal to the width of the second interdigital electrode.

7. The TC-SAW resonator for suppressing lateral noise according to claim 5, characterized in that: The width of the clutter suppression structure distributed at the connecting end and the free end of the first interdigital electrode is greater than the width of the first interdigital electrode; The width of the clutter suppression structure distributed at the connecting end and the free end of the second interdigital electrode is greater than the width of the second interdigital electrode.

8. The TC-SAW resonator for suppressing lateral noise according to claim 2, characterized in that: The material of the clutter suppression structure includes one or more of chromium, copper, platinum, tantalum, titanium and tungsten.

9. The TC-SAW resonator for suppressing lateral noise according to claim 2, characterized in that: The thickness of the clutter suppression structure is smaller than the thickness of the electrode layer where the interdigital transducer is located.

10. A method for preparing a TC-SAW resonator for suppressing lateral noise according to any one of claims 1 to 9, characterized in that: include: forming a first photoresist layer on the piezoelectric substrate; Patterning the first photoresist layer to form a first opening exposing a portion of the surface of the piezoelectric substrate; Depositing a first metal layer, wherein the first metal layer covers the first photoresist layer and the surface of the piezoelectric substrate exposed by the first opening; removing the first photoresist layer and the first metal layer on the first photoresist layer, and forming a plurality of noise suppression structures on the piezoelectric substrate; forming a second photoresist layer on the piezoelectric layer; Patterning the first photoresist layer to form a second opening exposing a portion of the surface of the piezoelectric substrate and the noise suppression structure; Depositing a second metal layer, wherein the second metal layer covers the second photoresist layer, the surface of the piezoelectric substrate exposed by the second opening, and the noise suppression structure; removing the second photoresist layer and the second metal layer on the second photoresist layer, and forming the interdigital transducer with the remaining second metal layer on the piezoelectric substrate; A temperature compensation layer is formed on the IDT.

11. A TC-SAW filter, characterized in that: The TC-SAW filter comprises the TC-SAW resonator for suppressing lateral noise according to any one of claims 1 to 9.

Images