Super junction embedded groove type silicon carbide irradiation detector and preparation method thereof

Abstract

The invention discloses a groove type silicon carbide irradiation detector with an embedded super junction and a preparation method thereof, and relates to the technical field of microelectronics, and the groove type silicon carbide irradiation detector with the embedded super junction is characterized in that a plurality of grooves are formed in a first doping type epitaxial layer at intervals based on a PiN structure; the inner wall of the trench is provided with a region of a doping type different from that of the sensitive region, and the interior of the sensitive region of a single doping type in the PiN structure is provided with a super junction of a doping type different from that of the sensitive region, wherein the super junction is located below the trench. Due to the introduction of the super junction and the doped region on the inner wall of the groove, the width of the depletion region of the sensitive region is increased, and an electric field in the depletion region enables electron hole pairs generated by irradiation to be better collected, so that the charge collection efficiency of the detector is improved.

Description

Technical Field

[0001] The present invention belongs to the field of microelectronic technology, and in particular relates to a trench-type silicon carbide radiation detector with an embedded super junction and a preparation method thereof. Background Art

[0002] Semiconductor radiation detectors have been widely used in nuclear medicine, nuclear power plant detection, environmental monitoring, space particle detection and other fields. Compared with traditional Si and Ge materials, wide bandgap semiconductor silicon carbide (SiC) materials have the characteristics of large bandgap width, high critical displacement energy, strong critical breakdown field, and high thermal conductivity. The radiation detectors made of it have largely overcome the problem of device performance degradation when traditional semiconductor devices work in harsh environments such as high temperature and strong radiation.

[0003] SiC irradiation detectors have shown good application potential in detecting and calibrating the trajectory and energy spectrum of high-energy, high-dose irradiated particles. PiN diode structures are usually used as the main body of the detector, in which the sensitive area, that is, the volume of the i-zone, determines the detection efficiency. Under the premise of a certain detector area, in order to ensure the sufficient collection of irradiated carriers, the thickness of the detector sensitive area needs to be set to correspond to the effective range of the irradiated particles in the material, that is, for high-energy irradiated particles with a large energy deposition distance, a thicker sensitive area needs to be designed. Another feature of the sensitive area is that its doping concentration is low to ensure that a large sensitive area depletion is achieved with a small reverse bias voltage. However, for high-energy particle irradiation detection, a thick sensitive area still requires a large reverse bias operating voltage to achieve depletion collection, which means that the detector designed based on traditional Schottky or PiN diodes has a strong surface and junction peak electric field, which brings significant leakage noise risks to the detector. At the same time, the single i-zone design also makes the electric field distribution in the sensitive area uneven, which is not conducive to the separation and collection of irradiated carriers. Summary of the invention

[0004] In order to solve the above problems existing in the prior art, the present invention provides a trench-type silicon carbide irradiation detector with an embedded super junction and a preparation method thereof. The technical problem to be solved by the present invention is achieved by the following technical solutions:

[0005] The present invention provides a trench-type silicon carbide radiation detector with an embedded super junction, comprising:

[0006] substrate layer;

[0007] A first doping type epitaxial layer, located on the upper surface of the substrate layer;

[0008] a plurality of grooves, the grooves extending from the upper surface of the first doping type epitaxial layer to the interior of the first doping type epitaxial layer, the plurality of grooves being arranged at intervals;

[0009] A plurality of super junctions are located inside the first doping type epitaxial layer, the plurality of super junctions are arranged one by one below the plurality of trenches, and the ion doping type of the super junctions is different from the ion doping type of the first doping type epitaxial layer;

[0010] A second doping type epitaxial layer, located on the inner wall of the trench and the upper surface of the first doping type epitaxial layer;

[0011] A first ohmic contact electrode is located on the upper surface of the second doping type epitaxial layer;

[0012] The second ohmic contact electrode is located on the lower surface of the substrate layer.

[0013] In one embodiment of the present invention, the substrate layer is a silicon carbide substrate, the doping type is N-type, and the doping concentration is 5×10 18 cm -3 -8×10 18 cm -3 .

[0014] In one embodiment of the present invention, the thickness of the first doping type epitaxial layer is 20-100 μm, the doping type is N type, and the doping concentration is 1×10 14 cm -3 -5×10 14 cm -3 .

[0015] In one embodiment of the present invention, the width of the groove is 5 μm-15 μm, and the depth is 10 μm-90 μm.

[0016] In one embodiment of the present invention, the spacing between adjacent grooves is 5 μm-15 μm.

[0017] In one embodiment of the present invention, the doping type of the super junction is P type, and the doping concentration is 1×10 15 cm -3 -1×10 17 cm -3 .

[0018] In one embodiment of the present invention, the super junction has a width of 1 μm-15 μm and a thickness of 10 μm-40 μm.

[0019] In one embodiment of the present invention, the second doping type epitaxial layer has a thickness of 0.5 μm-2 μm, a doping type of P type, and a doping concentration of 5×10 18 cm -3 -2×10 19 cm -3 .

[0020] In one embodiment of the present invention, the first ohmic contact electrode and the second ohmic contact electrode are both made of Ni, with a thickness of 0.2 μm-1 μm.

[0021] The present invention provides a method for preparing a trench-type silicon carbide radiation detector with an embedded super junction, which is applicable to the trench-type silicon carbide radiation detector with an embedded super junction described in any one of the above embodiments, and the preparation method comprises:

[0022] Step 1: Select a substrate layer, and epitaxially grow a first doping type epitaxial layer on the upper surface of the substrate layer;

[0023] Step 2: etching the first doping type epitaxial layer to form a plurality of grooves extending from the upper surface of the first doping type epitaxial layer to the inside thereof, wherein the plurality of grooves are arranged at intervals;

[0024] Step 3: forming a plurality of super junctions inside the first doping type epitaxial layer by ion implantation, wherein the plurality of super junctions are arranged under the plurality of trenches in a one-to-one correspondence;

[0025] Step 4: forming a second doping type epitaxial layer on the inner wall of the trench and the upper surface of the first doping type epitaxial layer by ion implantation;

[0026] Step 5: sputtering a metal layer on the upper surface of the second doping type epitaxial layer and the lower surface of the substrate layer to form a first ohmic contact electrode and a second ohmic contact electrode.

[0027] Compared with the prior art, the present invention has the following beneficial effects:

[0028] 1. The trench-type silicon carbide radiation detector with embedded super junction of the present invention is based on PiN structure, and multiple trenches are arranged in the first doping type epitaxial layer at intervals. The inner wall of the trench is provided with a region of a doping type different from that of the sensitive region, and a super junction of a doping type different from that of the sensitive region is arranged below the trench inside the sensitive region of a single doping type in the PiN structure. Due to the introduction of the super junction and the doping region on the inner wall of the trench, the width of the depletion region of the sensitive region is increased, and the electric field inside the depletion region will make the electron-hole pairs generated by irradiation better collected, thereby improving the charge collection efficiency of the detector;

[0029] 2. The trench-type silicon carbide radiation detector with embedded super junction of the present invention, due to the introduction of the trench, the device with the original planar structure is transformed into a trench-type device, so that the contact area between the conversion material on the surface of the device and the device is increased, so that more secondary particles enter the device and are collected, thereby improving the intrinsic detection efficiency of the detector;

[0030] 3. The grooved silicon carbide irradiation detector with an embedded super junction of the present invention introduces a super junction and a groove. At the same time, the doping area of ​​the super junction and the inner wall of the groove will change the overall electric field distribution, optimize the electric field distribution inside the detector, and make the electric field distribution more uniform. The uniform electric field will also promote the improvement of the charge collection efficiency of the detector, thereby reducing the impact of radiation damage on the detector performance in an irradiated environment.

[0031] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present invention more obvious and easy to understand, the following specifically cites a preferred embodiment and describes it in detail with the accompanying drawings as follows. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 is a schematic structural diagram of a trench-type silicon carbide irradiation detector with an embedded super junction provided by an embodiment of the present invention;

[0033] Figure 2 A schematic diagram of a simulated primitive cell structure of a trench-type silicon carbide irradiation detector with an embedded super junction provided by the present invention;

[0034] Figure 3 is a schematic diagram showing the variation of charge collection efficiency (CCE) of multiple silicon carbide irradiation detectors with voltage provided by an embodiment of the present invention;

[0035] Figure 4 is a schematic diagram of a method for preparing a trench-type silicon carbide irradiation detector with an embedded super junction provided by an embodiment of the present invention;

[0036] Figure 5 It is a process flow chart of a method for preparing a trench-type silicon carbide irradiation detector with an embedded super junction provided in an embodiment of the present invention.

[0037] Icon: 1-substrate layer; 2-first doping type epitaxial layer; 3-super junction; 4-trench; 5-second doping type epitaxial layer; 6-first ohmic contact electrode; 7-second ohmic contact electrode. DETAILED DESCRIPTION

[0038] In order to further explain the technical means and effects adopted by the present invention to achieve the predetermined purpose of the invention, a trench-type silicon carbide irradiation detector with an embedded super junction and a preparation method thereof proposed in accordance with the present invention are described in detail below in combination with the accompanying drawings and specific implementation methods.

[0039] The above and other technical contents, features and effects of the present invention are clearly presented in the following detailed description of the specific implementation modes in conjunction with the accompanying drawings. Through the description of the specific implementation modes, the technical means and effects adopted by the present invention to achieve the predetermined purpose can be more deeply and specifically understood. However, the attached drawings are only for reference and explanation purposes and are not used to limit the technical solutions of the present invention.

[0040] In a first aspect, an embodiment of the present invention provides a trench-type silicon carbide radiation detector with an embedded superjunction. Figure 1 , Figure 1 Schematic diagram of the structure of a trench-type silicon carbide irradiation detector with an embedded super junction provided by an embodiment of the present invention. Figure 1 As shown, the trench-type silicon carbide irradiation detector with an embedded super junction in this embodiment includes: a substrate layer 1, a first doping type epitaxial layer 2, a plurality of super junctions 3, a plurality of trenches 4, a second doping type epitaxial layer 5, a first ohmic contact electrode 6 and a second ohmic contact electrode 7.

[0041] Among them, the first doped type epitaxial layer 2 is located on the upper surface of the substrate layer 1; the groove 4 extends from the upper surface of the first doped type epitaxial layer 2 to the inside of the first doped type epitaxial layer 2, and multiple grooves 4 are arranged at intervals; multiple super junctions 3 are located inside the first doped type epitaxial layer 2, and multiple super junctions 3 are arranged one by one below the multiple grooves 4, and the ion doping type of the super junction 3 is different from the ion doping type of the first doped type epitaxial layer 2; the second doped type epitaxial layer 5 is located on the inner wall of the groove 4 and the upper surface of the first doped type epitaxial layer 2; the first ohmic contact electrode 6 is located on the upper surface of the second doped type epitaxial layer 5; the second ohmic contact electrode 7 is located on the lower surface of the substrate layer 1.

[0042] The trench-type silicon carbide radiation detector with embedded super junction of the embodiment of the present invention is based on the PiN structure, and a plurality of trenches 4 are arranged at intervals in the first doping type epitaxial layer 2, and the inner wall of the trench 4 is provided with a region of a doping type different from that of the sensitive region, that is, the second doping type epitaxial layer 5, and a super junction 3 of a doping type different from that of the sensitive region is arranged below the trench 4 inside the sensitive region of a single doping type in the PiN structure. Due to the introduction of the super junction 3 and the P+ doping region on the inner wall of the trench 4, the width of the depletion region of the sensitive region is increased, and the electric field inside the depletion region can make the electron-hole pairs generated by irradiation better collected, thereby improving the charge collection efficiency of the detector.

[0043] In addition, the introduction of the groove 4 will turn the original planar structure device into a groove-type device, increasing the contact area between the conversion material on the device surface and the device, so that more secondary particles enter the device and are collected, thereby improving the intrinsic detection efficiency of the detector. Due to the introduction of the super junction 3 and the groove 4, the doping area of ​​the super junction 3 and the inner wall of the groove 4 will change the overall electric field distribution, optimize the electric field distribution inside the detector, and make the electric field distribution more uniform. The uniform electric field will also promote the improvement of the charge collection efficiency of the detector, thereby reducing the impact of radiation damage on the performance of the detector in an irradiated environment.

[0044] In this embodiment, the introduction of the super junction 3 changes the electric field distribution of the entire device, from a triangular electric field to a nearly rectangular electric field, and the electric field becomes uniform. The uniform electric field distribution enables the detector to achieve full depletion of the sensitive area at a lower operating bias, thereby reducing the full depletion operating voltage of the detector. The expansion of the depletion region expands the internal electric field and thus increases the collection efficiency. The introduction of the groove 4 causes the P+ doped region to penetrate deep into the device. Similar to the super junction, the deep P+ doped region changes the internal electric field of the device and promotes the widening of the depletion region. This improves the charge collection efficiency.

[0045] In an optional embodiment, the substrate layer 1 is a silicon carbide substrate, the doping type is N-type, and the doping concentration is 5×10 18 cm -3 -8×10 18 cm -3 .

[0046] Optionally, the substrate layer 1 has a thickness of 20 μm and a width of 40 μm, and the doping ions may be nitrogen ions or phosphorus ions.

[0047] In an optional embodiment, the first doping type epitaxial layer 2 has a thickness of 20-100 μm, an N-type doping type, and a doping concentration of 1×10 14 cm -3 -5×10 14 cm -3 .

[0048] Optionally, the width of the first doping type epitaxial layer 2 is 40 μm, and the doping ions may be nitrogen ions or phosphorus ions.

[0049] In an optional embodiment, the width of the trench 4 is 5 μm-15 μm, and the depth is 10 μm-90 μm. The spacing between adjacent trenches 4, that is, the mesa width of the first doping type epitaxial layer 2 is 5 μm-15 μm.

[0050] In an optional embodiment, the width of the super junction 3 is 1 μm-15 μm, and the thickness is 10 μm-40 μm. The doping type of the super junction 3 is P type, and the doping concentration is 1×10 15 cm -3 -1×10 17 cm -3 .

[0051] Alternatively, the doping ions may be boron ions.

[0052] In an optional embodiment, the second doping type epitaxial layer 5 has a thickness of 0.5 μm-2 μm, a doping type of P type, and a doping concentration of 5×10 18 cm -3 -2×10 19 cm -3 .

[0053] Alternatively, the doping ions may be boron ions.

[0054] In an optional embodiment, the materials of the first ohmic contact electrode 6 and the second ohmic contact electrode 7 are both Ni, and the thickness is 0.2 μm-1 μm.

[0055] In the grooved silicon carbide irradiation detector with an embedded super junction of the present invention, the detection efficiency of the detector can be changed by adjusting parameters such as the depth and width of the groove 4, the thickness of the doped region of the inner wall of the groove 4, and the width and thickness of the super junction 3. As the depth of the groove 4 increases and the width and thickness of the super junction 3 increase, the detector will have a higher detection efficiency. Reasonable setting of the width of the groove 4 according to the specific size of the detector will enable the detector to have a high sensitive area volume and high detection efficiency in a low-voltage working environment. The combined introduction of the groove 4 and the super junction 3 in the PiN structure can increase the withstand voltage reliability of the detector, and at the same time greatly improve the charge collection efficiency compared to conventional irradiation detector structures and conventional grooved structure detectors, thereby enhancing the reliability and detection efficiency of the detector.

[0056] For example, 14 MeV neutrons are detected in a sensitive region with a thickness of 45 μm, wherein the width of the groove 4 is 5 μm and the depth of the groove 4 is 10 μm. The super junction 3 is built in the 20 μm thickness of the first doping type epitaxial layer 2, so that the radiation detector has a 50% lower operating voltage than the conventional detector structure while achieving a 100% charge collection rate, and a 30% lower operating voltage than the conventional trench type radiation detector.

[0057] See also Figure 2 , Figure 2The schematic diagram of the simulated primitive cell structure of a trench-type silicon carbide radiation detector with an embedded super junction provided by the present invention is a simulation verification using Sentaurus TCAD software based on the primitive cell structure of the trench-type silicon carbide radiation detector with an embedded super junction. Figure 2 As shown in FIG. 1 , the structural parameters of the simulated primitive cell of the trench-type silicon carbide irradiation detector with embedded super junction are as follows: the thickness of substrate 1 is 20 μm, the width of substrate 1 is 20 μm, the doping type is N-type, and the doping concentration is 5×10 18 cm -3 The first doping type epitaxial layer 2 has a thickness of 44.5 μm, a width of 20 μm, an N-type doping type, and a doping concentration of 3×10 14 cm -3 P-type doping is performed at a height of 10 μm on the first doping type epitaxial layer 2 and below the trench 4 to form a super junction 3. The doping width of the super junction 3 is 5 μm, the thickness is 10 μm, and the doping concentration is 1.5×10 16 cm -3 The width of the trench 4 is 5 μm and the depth is 10 μm. The thickness of the second doping type epitaxial layer 5 is 0.5 μm, the doping type is P type, and the doping concentration is 1.05×10 19 cm -3 The first ohmic contact electrode 6 is made of Ni material and has a thickness of 0.2 μm, and the second ohmic contact electrode 7 is made of Ni material and has a thickness of 0.2 μm.

[0058] See also Figure 3 , Figure 3 It is a schematic diagram of the charge collection efficiency (CCE) of multiple silicon carbide irradiation detectors provided by an embodiment of the present invention as a function of voltage. Among them, TPIN-W5-H10-SJ-10 represents a silicon carbide irradiation detector combining a superjunction with a groove, with a groove width of 5μm, a groove depth of 10μm, a superjunction thickness of 10μm, and a depth of 20μm after the two are superimposed, PIN-SJ-20 represents a silicon carbide irradiation detector with only a superjunction structure, with a superjunction thickness of 20μm, and TPIN-W5H10 represents a silicon carbide irradiation detector with only a groove, with a groove width of 5μm and a groove depth of 10μm.

[0059] It can be seen from the figure that adding a super junction to the silicon carbide irradiation detector based on the groove will have a good effect, and its charge collection efficiency is greatly improved. The charge collection efficiency of the silicon carbide irradiation detector with a super junction thickness of 20μm is better than the charge collection efficiency of the silicon carbide irradiation detector with a depth of 20μm after the groove and super junction are superimposed, but the silicon carbide irradiation detector with a groove and a super junction is easy to implement from a process perspective, and the efficiency can reach 95% of the silicon carbide irradiation detector with only a super junction at 20V. Therefore, the solution of the trench-type silicon carbide irradiation detector with an embedded super junction in this embodiment is feasible.

[0060] In a second aspect, an embodiment of the present invention provides a method for preparing a trench-type silicon carbide radiation detector with an embedded super junction, which is applicable to the trench-type silicon carbide radiation detector with an embedded super junction provided in the first aspect. Figure 4 and Figure 5 The method for preparing the trench-type silicon carbide irradiation detector with embedded super junction of this embodiment is described. Figure 4 is a schematic diagram of a method for preparing a trench-type silicon carbide irradiation detector with an embedded super junction provided by an embodiment of the present invention, Figure 5 It is a process flow chart of a method for preparing a trench-type silicon carbide irradiation detector with an embedded super junction provided in an embodiment of the present invention.

[0061] The method for preparing the trench-type silicon carbide radiation detector with embedded super junction of this embodiment includes:

[0062] Step 1: Select a substrate layer, and epitaxially grow a first doping type epitaxial layer on the upper surface of the substrate layer.

[0063] In this embodiment, an N+ silicon carbide substrate is selected as the substrate layer, and the N+ silicon carbide substrate is cleaned by standard RCA. An N- epitaxial layer is epitaxially grown on the N+ silicon carbide substrate as the first doping type epitaxial layer.

[0064] Step 2: Etching the first doping type epitaxial layer to form a plurality of trenches extending from the upper surface of the first doping type epitaxial layer to the interior thereof, wherein the plurality of trenches are arranged at intervals.

[0065] In this embodiment, first, a SiO2 layer is deposited on the N-epitaxial layer to serve as an etching mask and an ion implantation mask, and as a self-aligned mask for the next step of ion implantation; after coating, exposure, development, post-baking, and UV curing, a photoresist (PR) etching mask is formed on both sides of the SiO2 layer. Then, according to the photoresist etching mask above the SiO2 layer, the SiO2 layer is dry-etched by ICP or RIE plasma, so that the two sides of the etched area of ​​the SiO2 layer are steep and vertically aligned with the two sides of the photoresist etching mask. Finally, the N-epitaxial layer is etched by ICP to form a groove, which serves as a window for subsequent ion implantation.

[0066] Step 3: forming a plurality of super junctions inside the first doping type epitaxial layer by ion implantation, wherein the plurality of super junctions are arranged under the plurality of trenches in a one-to-one correspondence.

[0067] In this embodiment, after removing the photoresist above the SiO2 layer, a first ion implantation is performed to form a P-type doped super junction below the trench.

[0068] Step 4: Form a second doping type epitaxial layer on the inner wall of the trench and the upper surface of the first doping type epitaxial layer by ion implantation.

[0069] In this embodiment, a second ion implantation is performed on the side wall of the trench to form a P+ layer on the side wall of the trench. After that, the SiO2 layer is removed and then a third ion implantation is performed using a vertical implantation method to form a P+ layer at the bottom of the trench and on the upper surface of the N-epitaxial layer, thereby obtaining a second doping type epitaxial layer covering the inner wall of the trench 4 and the upper surface of the first doping type epitaxial layer. Finally, the device is subjected to a high temperature annealing treatment.

[0070] Step 5: sputtering a metal layer on the upper surface of the second doping type epitaxial layer and the lower surface of the substrate layer to form a first ohmic contact electrode and a second ohmic contact electrode.

[0071] In this embodiment, metal Ni is sputtered on the upper surface of the second doping type epitaxial layer to form a first ohmic contact electrode, ie, an anode, and metal Ni is sputtered on the lower surface of the substrate layer to form a second ohmic contact electrode, ie, a cathode.

[0072] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is any such actual relationship or order between these entities or operations. Moreover, the term "include", "comprise" or any other variant is intended to cover non-exclusive inclusion, so that the article or device including a series of elements includes not only those elements, but also other elements that are not explicitly listed. In the absence of more restrictions, the elements defined by the sentence "including one..." do not exclude the existence of other identical elements in the article or device including the elements. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The orientation or position relationship indicated by "up", "down", "left", "right", etc. is based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present invention.

[0073] The above contents are further detailed descriptions of the present invention in combination with specific preferred embodiments, and it cannot be determined that the specific implementation of the present invention is limited to these descriptions. For ordinary technicians in the technical field to which the present invention belongs, several simple deductions or substitutions can be made without departing from the concept of the present invention, which should be regarded as falling within the protection scope of the present invention.

Claims

1. A trench-type silicon carbide radiation detector with an embedded superjunction, characterized in that: include: A substrate layer (1); A first doping type epitaxial layer (2), located on the upper surface of the substrate layer (1); a plurality of grooves (4), the grooves (4) extending from the upper surface of the first doping type epitaxial layer (2) to the interior of the first doping type epitaxial layer (2), the plurality of grooves (4) being arranged at intervals; A plurality of super junctions (3) are located inside the first doping type epitaxial layer (2), the plurality of super junctions (3) are arranged one by one below the plurality of trenches (4), and the ion doping type of the super junctions (3) is different from the ion doping type of the first doping type epitaxial layer (2); A second doping type epitaxial layer (5) located on the inner wall of the trench (4) and the upper surface of the first doping type epitaxial layer (2); A first ohmic contact electrode (6) is located on the upper surface of the second doping type epitaxial layer (5); The second ohmic contact electrode (7) is located on the lower surface of the substrate layer (1).

2. The trench-type silicon carbide radiation detector with embedded super junction according to claim 1, characterized in that: The substrate layer (1) is a silicon carbide substrate, the doping type is N-type, and the doping concentration is 5×10 18 cm -3 -8×10 18 cm -3 .

3. The trench-type silicon carbide radiation detector with embedded super junction according to claim 1, characterized in that: The first doping type epitaxial layer (2) has a thickness of 20-100 μm, an N-type doping type, and a doping concentration of 1×10 14 cm -3 -5×10 14 cm -3 .

4. The trench-type silicon carbide radiation detector with embedded super junction according to claim 1, characterized in that: The groove (4) has a width of 5 μm-15 μm and a depth of 10 μm-90 μm.

5. The trench-type silicon carbide radiation detector with embedded super junction according to claim 1, characterized in that: The spacing between adjacent grooves (4) is 5 μm-15 μm.

6. The trench-type silicon carbide radiation detector with embedded super junction according to claim 1, characterized in that: The doping type of the super junction (3) is P type, and the doping concentration is 1×10 15 cm -3 -1×10 17 cm -3 .

7. The trench-type silicon carbide radiation detector with embedded super junction according to claim 1, characterized in that: The super junction (3) has a width of 1 μm-15 μm and a thickness of 10 μm-40 μm.

8. The trench-type silicon carbide radiation detector with embedded super junction according to claim 1, characterized in that: The second doping type epitaxial layer (5) has a thickness of 0.5 μm-2 μm, a doping type of P type, and a doping concentration of 5×10 18 cm -3 -2×10 19 cm -3 .

9. The trench-type silicon carbide radiation detector with embedded super junction according to claim 1, characterized in that: The first ohmic contact electrode (6) and the second ohmic contact electrode (7) are both made of Ni and have a thickness of 0.2 μm-1 μm.

10. A method for preparing a trench-type silicon carbide radiation detector with an embedded super junction, characterized in that: The trench-type silicon carbide irradiation detector with an embedded super junction according to any one of claims 1 to 9, wherein the preparation method comprises: Step 1: Select a substrate layer, and epitaxially grow a first doping type epitaxial layer on the upper surface of the substrate layer; Step 2: etching the first doping type epitaxial layer to form a plurality of grooves extending from the upper surface of the first doping type epitaxial layer to the inside thereof, wherein the plurality of grooves are arranged at intervals; Step 3: forming a plurality of super junctions inside the first doping type epitaxial layer by ion implantation, wherein the plurality of super junctions are arranged under the plurality of trenches in a one-to-one correspondence; Step 4: forming a second doping type epitaxial layer on the inner wall of the trench and the upper surface of the first doping type epitaxial layer by ion implantation; Step 5: sputtering a metal layer on the upper surface of the second doping type epitaxial layer and the lower surface of the substrate layer to form a first ohmic contact electrode and a second ohmic contact electrode.

Images