Light emitting diode and light emitting device

Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to a light-emitting diode which comprises an epitaxial laminated layer, the epitaxial laminated layer is provided with an upper surface and a lower surface which are opposite, and the epitaxial laminated layer sequentially comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer in the direction from the upper surface to the lower surface; the epitaxial laminated layer is provided with a first epitaxial side wall and a second epitaxial side wall on the same side, the first epitaxial side wall is a part of the side wall on the first semiconductor layer, and the second epitaxial side wall extends from the part of the side wall of the second semiconductor layer to the upper surface of the epitaxial laminated layer, passes through the side wall of the light-emitting layer and extends to the side wall of the first semiconductor layer; the first extension side wall is connected with the second extension side wall, an inflection point is formed at the joint of the first extension side wall and the second extension side wall, an included angle is formed at the inflection point, and the included angle is larger than 90 degrees. By means of the arrangement, organic matter can be effectively prevented from remaining at the cutting channel, and the light-emitting characteristic of the light-emitting diode is effectively improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a light emitting diode and a light emitting device. Background Art

[0002] Light Emitting Diode (LED) is a semiconductor light-emitting element, usually made of semiconductors such as GaN, GaAs, GaP, GaAsP, etc., and its core is a PN junction with light-emitting characteristics. LED has the advantages of high luminous intensity, high efficiency, small size, and long service life, and is considered to be one of the most promising light sources at present. LED has been widely used in lighting, monitoring and command, high-definition broadcasting, high-end cinemas, office displays, conference interaction, virtual reality and other fields.

[0003] At present, LED chips generally need to go through multiple photolithography processes and photoresist stripping processes during the production process. The photoresist at the cutting path of the LED chip is difficult to remove completely. Figure 7 As shown, especially at the junction of the mesa epitaxial sidewall and the cutting path, since this place is close to a right angle, it is difficult to remove and easily leaves organic matter. When the LED is powered on, this position often has leakage or even burn problems. Therefore, how to solve this problem has long been a technical problem that technicians in this field need to solve.

[0004] It should be noted that the information disclosed in this background technology section is only intended to increase the understanding of the overall background of the present invention, and should not be regarded as admitting or in any form suggesting that the information constitutes a publicly available technology for those skilled in the art. Known prior art. Summary of the invention

[0005] The present invention provides a light-emitting diode, which includes an epitaxial stack, the epitaxial stack has an upper surface and a lower surface relative to each other, and the epitaxial stack includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer in sequence from the upper surface to the lower surface. The epitaxial stack has a first epitaxial sidewall and a second epitaxial sidewall on the same side. The first epitaxial sidewall is a partial sidewall on the first semiconductor layer. The second epitaxial sidewall extends from a partial sidewall of the second semiconductor layer toward the upper surface of the epitaxial stack, through the sidewall of the light-emitting layer, and extends to the sidewall of the first semiconductor layer. The first epitaxial sidewall is connected to the second epitaxial sidewall. An inflection point is formed at the connection between the first epitaxial sidewall and the second epitaxial sidewall, and an angle is formed at the inflection point, and the angle is greater than 90°.

[0006] The present invention also provides a light-emitting diode, which includes an epitaxial stack and a protective layer. The epitaxial stack has an upper surface and a lower surface relative to each other, and the epitaxial stack includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer in sequence from the upper surface to the lower surface. The protective layer is arranged outside the epitaxial stack and covers part of the side wall of the epitaxial stack. The outermost part of the protective layer is defined as the protective layer side wall, and the protective layer side wall has an inflection point at the height position of the first semiconductor, and a part of the inflection point extends toward the upper surface direction of the epitaxial stack to form a first protective side wall, and a part of the inflection point extends toward the lower surface direction of the epitaxial stack to form a second protective side wall, and the first protective side wall and the second protective side wall form an angle at the inflection point, and the angle is greater than 90°.

[0007] The present invention further provides a light emitting device, which includes a light emitting diode, and the light emitting diode is any one of the light emitting diodes described above.

[0008] A light-emitting diode and a light-emitting device provided by the present invention form two inclined side walls by setting an inflection point, and the inflection point is located on the side wall of the first semiconductor layer. Since there is an inclination angle at the inflection point, it is easier to clean organic matter in the process of degumming after the chip is cut, and it is also beneficial to the continuity of other subsequent protective layers covering the side walls. In addition, since the inflection point is set at the first semiconductor layer, the light-emitting layer and the second semiconductor layer are not exposed. In this way, even if some organic matter remains, the problem of leakage burns can be avoided, and it can also ensure that the light-emitting layer has a flat surface and is not easy to leave organic matter, thereby reducing the risk of leakage.

[0009] Other features and beneficial effects of the present invention will be described in the following description, and some of the technical features and beneficial effects can be obviously derived from the description or understood by implementing the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, a brief introduction is given below to the drawings required for use in the embodiments or the description of the prior art. Obviously, some of the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0011] Figure 1 is a schematic structural diagram of a light emitting diode provided by a first embodiment of the present invention; Figure 2 yes Figure 1 Schematic diagram of the structure at the epitaxial stack in FIG. Figure 3 yes Figure 2 A partial enlarged schematic diagram of Figure 4 is a schematic structural diagram of a light emitting diode provided by a second embodiment of the present invention; Figure 5 yes Figure 4 A partial enlarged schematic diagram of Figure 6 is a schematic structural diagram of a light emitting diode provided by a third embodiment of the present invention; Figure 7 It is a schematic diagram of the structure of a traditional light emitting diode.

[0012] Reference numerals: 10-epitaxial stack; 101-upper surface; 102-lower surface; 103-first semiconductor layer; 104-light-emitting layer; 105-second semiconductor layer; 12-protective layer; 14-first electrode; 16-dielectric layer; 18-metal reflective layer; 20-bonding layer; 22-substrate; 24-second electrode; 26-current diffusion layer; 31-first epitaxial sidewall; 32-second epitaxial sidewall; 40-protective layer sidewall; 41-first protective sidewall; 42-second protective sidewall; A-inflection point; B-angle; d1-distance from inflection point to the upper surface of the light-emitting layer; H1-thickness of the first semiconductor layer; W1-vertical projection length. DETAILED DESCRIPTION

[0013] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all the embodiments; the technical features designed in different implementation modes of the present invention described below can be combined with each other as long as they do not conflict with each other; based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0014] In the description of the present invention, it should be understood that the terms "center", "lateral", "up", "down", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "multiple" means two or more. In addition, the term "including" and any variation thereof all mean "at least including".

[0015] See also Figure 1 , Figure 2 and Figure 3 , Figure 1 is a schematic structural diagram of a light emitting diode provided by a first embodiment of the present invention, Figure 2 yes Figure 1 A schematic diagram of the structure of the epitaxial stack 10 in FIG. Figure 3 yes Figure 2 In order to achieve at least one of the above advantages or other advantages, a first embodiment of the present invention provides a light emitting diode. As shown in the figure, the light emitting diode includes an epitaxial stack 10.

[0016] The epitaxial stack 10 has an upper surface 101 and a lower surface 102 opposite to each other. The epitaxial stack 10 includes a first semiconductor layer 103, a light emitting layer 104 and a second semiconductor layer 105 in sequence from the upper surface 101 to the lower surface 102.

[0017] Optionally, the epitaxial stack 10 can be formed on the growth substrate by physical vapor deposition (PVD), chemical vapor deposition (CVD), epitaxial growth (Epitaxy Growth Technology) or atomic beam deposition (ALD). The first semiconductor layer 103 and the second semiconductor layer 105 are semiconductors with different conductivity, electrical properties and polarities, which provide electrons or holes according to the doped elements; for example, when the first semiconductor layer 103 is n-type, the second semiconductor layer 105 is p-type, and the light-emitting layer 104 is formed between the first semiconductor layer 103 and the second semiconductor layer 105. The electrons and holes are recombined in the light-emitting layer 104 under the driving of a current, and the electrical energy is converted into light energy to emit light. The wavelength of the light emitted by the light-emitting diode is adjusted by changing the physical and chemical composition of one or more layers of the epitaxial light-emitting layer 104; and vice versa. In this embodiment, a light emitting diode in which the first semiconductor layer 103 is an n-type and the second semiconductor layer 105 is a p-type is taken as an example.

[0018] The light-emitting layer 104 is a region for providing light radiation for the recombination of electrons and holes. Different materials can be selected according to different light-emitting wavelengths. The light-emitting layer 104 can be a single heterostructure (SH), a double heterostructure (DH), a double-sided double heterostructure (DDH), or a multi-quantum well structure (MQW). The light-emitting layer 104 includes a well layer and a barrier layer, wherein the barrier layer has a larger band gap than the well layer. By adjusting the composition ratio of the semiconductor material in the light-emitting layer 104, it is expected to radiate light of different wavelengths. In this embodiment, the semiconductor epitaxial stack 100 is a semiconductor material layer capable of radiating ultraviolet, blue, green, yellow, red, infrared light, etc., and can specifically be a material of 200nm to 950nm, such as a common nitride, specifically a gallium nitride-based semiconductor epitaxial stack 100, which is commonly doped with elements such as aluminum and indium, and mainly provides radiation in the 200-550nm band; or a common aluminum gallium indium phosphorus-based or aluminum gallium arsenic-based semiconductor epitaxial stack 100, which mainly provides radiation in the 550-950nm band. In order to improve the luminous efficiency, it can be achieved by changing the depth of the quantum well, the number of layers, thickness and / or other features of the paired quantum wells and quantum barriers in the light-emitting layer 104. In this embodiment, the semiconductor epitaxial stack 10 is preferably composed of AlGaInP-based or GaAs-based materials.

[0019] As shown in the figure, the epitaxial stack 10 has a first epitaxial sidewall 31 and a second epitaxial sidewall 32 on the same side. The figure takes the first epitaxial sidewall 31 and the second epitaxial sidewall 32 on the left side as an example for explanation, and the first epitaxial sidewall 31 is a partial sidewall of the first semiconductor layer 103. The second epitaxial sidewall 32 extends from a partial sidewall of the second semiconductor layer 105 toward the upper surface 101 of the epitaxial stack 10, through the sidewall of the light-emitting layer 104 until it extends to the sidewall of the first semiconductor layer 103, that is, the second epitaxial sidewall 32 is generally composed of a partial sidewall of the second semiconductor layer 105, a sidewall of the light-emitting layer 104, and a partial sidewall of the first semiconductor layer 103. Furthermore, the first epitaxial sidewall 31 is connected to the second epitaxial sidewall 32, and an inflection point A is formed at the connection between the first epitaxial sidewall 31 and the second epitaxial sidewall 32, and an angle B is formed at the inflection point A, and the angle B>90°. Compared to Figure 7 With respect to the traditional right-angle L-shaped side wall, the present invention forms two inclined side walls by setting an inflection point A, and the inflection point A is located on the side wall of the first semiconductor layer 103 above the light-emitting layer 104, so that after the chip is cut, it is easier to clean the organic matter in the degumming process, and it is also beneficial to the continuity of other subsequent protective layers covering the side wall; and, since the inflection point A is set at the first semiconductor layer 103, part of the first semiconductor layer 103 is retained to cover the light-emitting layer 104 below, and the light-emitting layer 104 and the second semiconductor layer 105 are not exposed. In this way, even if some organic matter remains at the inflection point, it is accumulated on the part of the first semiconductor layer 103, which can avoid the problem of leakage burns, and can also ensure that the light-emitting layer 104 has a flat surface, and it is not easy to have organic matter remaining, thereby reducing the risk of leakage. Optionally, the first epitaxial sidewall 31 is a portion extending from the upper surface 101 of the epitaxial stack 10 to the lower surface 102 of the epitaxial stack 10 to the inflection point A, and the inflection point A is located on the sidewall of the first semiconductor layer 103. Optionally, considering the influence of the light extraction effect, the angle B can be in the range of 91° to 120°.

[0020] In some embodiments, the distance from the inflection point A to the upper surface of the light-emitting layer 104 is defined as d1, the thickness of the first semiconductor layer 103 is H1, and 0.05H1≤d1≤0.4H1. If d1 is less than 0.05H1, it means that the inflection point A is too close to the light-emitting layer 104, and organic matter may still be attached near the light-emitting layer 104, which may easily cause leakage problems; if d1 is greater than 0.4H1, it means that the inflection point A is located at a high position, resulting in a too narrow cutting path, which is not conducive to the implementation of subsequent processes.

[0021] In some embodiments, the upper surface 101 of the epitaxial stack 10 is used as a reference plane, and the angle between the extension line of the first epitaxial sidewall 31 and the upper surface 101 of the epitaxial stack 10 is 80° to 100°. In the illustrated embodiment, the angle is 90°, that is, the first epitaxial sidewall 31 is perpendicular to the upper surface 101 of the epitaxial stack 10.

[0022] In some embodiments, the vertical projection length W1 of the second epitaxial side wall 32 located on one side of the epitaxial stack 10 on the lower surface 102 of the epitaxial stack 10 ranges from 10 to 30 μm, that is, the overall width W1 of the second epitaxial side wall 32 in the horizontal direction is 10 to 30 μm. On the contrary, if it is greater than 30 μm, the remaining light-emitting layer is too small 104, which is not conducive to the light-emitting efficiency; if it is less than 10 μm, the cutting path is too narrow, which is not conducive to the subsequent cutting process.

[0023] In some embodiments, the light emitting diode further includes a protection layer 12 , a first electrode 14 , a dielectric layer 16 , a metal reflective layer 18 , a bonding layer 20 , a substrate 22 and a second electrode 24 .

[0024] The protective layer 12 covers the first epitaxial sidewall 31 and the second epitaxial sidewall 32 of the epitaxial stack 10, and mainly plays the role of protection and isolation. The material of the protective layer 12 may include silicon oxide, etc. The sidewall morphology of the protective layer 12 may be the same as the morphology after the first epitaxial sidewall 31 is connected to the second epitaxial sidewall 32. Since the sidewall morphology of the protective layer 12 is consistent with the morphology of the epitaxial stack 10, the coverage is better. Therefore, as a protective layer 12, it can better protect the chip.

[0025] The first electrode 14 is disposed on the upper surface 101 of the epitaxial stack 10. The first electrode 14 may be a single-layer structure, a double-layer structure or a multi-layer structure. The first electrode 14 may be made of a metal material, such as Cr, Pt, Au, Ni, Ti, Al or other metal materials or stacks.

[0026] The dielectric layer 16 is disposed on the lower surface 102 of the epitaxial stack 10, and the dielectric layer 16 has a plurality of conductive through holes, and the plurality of through holes are connected to the epitaxial stack 10. The dielectric layer 16 is light-transmissive. The material of the dielectric layer 16 may include transparent compounds such as silicon nitride, silicon oxide, titanium oxide, and a stacked combination thereof, for example, a Bragg reflector (DBR) formed by repeatedly stacking two materials with different refractive indices.

[0027] The metal reflective layer 18 is disposed on the side of the dielectric layer 16 away from the epitaxial stack 10, and the metal reflective layer 18 is connected to the epitaxial stack 10 through a through hole. The metal reflective layer 18 can be made of a metal material. The metal reflective layer 18 can have a reflectivity of more than 90%, and can be formed of a metal or alloy containing at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Ti, Cr, Zn, Pt, Au and Hf. The metal reflective layer 18 can reflect the light radiated from the epitaxial stack 10 toward the substrate 22 side back to the epitaxial stack 10, and radiate out from the light emitting surface side.

[0028] The bonding layer 20 is disposed on the side of the metal reflective layer 18 away from the epitaxial stack 10. The bonding layer 20 is used to bond the substrate 22 and the epitaxial stack 10 to improve the connection strength of the overall structure. The bonding layer 20 can be made of metal elements such as gold, tin, titanium, tungsten, nickel, platinum, indium, etc. The bonding layer 20 can be a single-layer structure or a multi-layer structure, and can be a combination of multiple materials.

[0029] The substrate 22 is disposed on a side of the bonding layer 20 away from the epitaxial stack 10. The substrate 22 is a conductive substrate 22, and the conductive substrate 22 may be a silicon, silicon carbide or metal substrate, and the metal substrate is preferably a copper, tungsten, copper tungsten or molybdenum substrate. In order to support the epitaxial stack 10 with sufficient mechanical strength, the thickness of the substrate 22 may be greater than 50 μm.

[0030] The second electrode 24 is disposed on a side of the substrate 22 away from the epitaxial stack 10. The second electrode 24 can be made of metal.

[0031] In some embodiments, a current diffusion layer 26 may be disposed below the second semiconductor layer 105. The current diffusion layer 26 plays a role in diffusing current. The material of the current diffusion layer 26 may include gallium phosphide, etc. Furthermore, the current diffusion layer 26 may be patterned to further diffuse the current. The dielectric layer 16 covers the current diffusion layer 26, and the through hole of the dielectric layer 16 exposes part of the current diffusion layer 26. The metal reflective layer 18 is electrically connected to the current diffusion layer 26 through the through hole.

[0032] See also Figure 4 and Figure 5 , Figure 4 is a schematic structural diagram of a light emitting diode provided by a second embodiment of the present invention, Figure 5 yes Figure 4 In order to achieve at least one of the above advantages or other advantages, the second embodiment of the present invention provides a light emitting diode. As shown in the figure, the light emitting diode may include a substrate 22, an epitaxial stack 10 and a protective layer 12.

[0033] The epitaxial stack 10 is disposed on a substrate 22, and other structural layers may be disposed between the epitaxial stack 10 and the substrate 22. The epitaxial stack 10 has an upper surface 101 and a lower surface 102 opposite to each other, and the epitaxial stack 10 includes a first semiconductor layer 103, a light emitting layer 104, and a second semiconductor layer 105 in sequence from the upper surface 101 to the lower surface 102.

[0034] The protective layer 12 is disposed outside the epitaxial stack 10 and covers part of the sidewall of the epitaxial stack 10. The outermost part of the protective layer 12 is defined as the protective layer sidewall 40. The protective layer sidewall 40 has an inflection point A at the height position of the first semiconductor, and a portion of the inflection point A extends toward the upper surface 101 of the epitaxial stack 10 to form a first protective sidewall 41, and a portion of the inflection point A extends toward the lower surface 102 of the epitaxial stack 10 to form a second protective sidewall 42. The first protective sidewall 41 and the second protective sidewall 42 form an angle B at the inflection point A, and the angle B>90°. Compared with the traditional right-angle L-shaped side wall, the present invention forms two inclined side walls by setting an inflection point A, and the inflection point A is located on the side wall of the protective layer 12 at a horizontal height above the light-emitting layer 104, so that after the chip is cut, it is easier to clean the organic matter in the degumming process, and it is also beneficial to the continuity of the protective layer 12 covering the epitaxial stack 10; and, because the inflection point A is set in a region higher than the light-emitting layer 104, the light-emitting layer 104 and the second semiconductor layer 105 are not exposed, so even if some organic matter remains, the problem of leakage burns can be avoided, and the light-emitting layer 104 can be ensured to have a flat surface, and it is not easy to leave organic matter, thereby reducing the risk of leakage. Optionally, the range of angle B is 91~120°.

[0035] The protective layer 12 may refer to the outermost structure of the chip before packaging. In some embodiments, the protective layer 12 may be a single-layer structure or a multi-layer structure. For example, when it is a single-layer structure, it may be a passivation layer, and when it is a multi-layer structure, it may be a DBR reflection structure.

[0036] In some embodiments, the point of the first protective sidewall 41 farthest from the inflection point A is the highest point of the first protective sidewall 41. The horizontal height at the highest point of the first protective sidewall 41 is not lower than the height of the upper surface 101 of the epitaxial stack 10. In some embodiments, the first protective sidewall 41 (such as the protective layer 12 shown in the figure) will cover more than the epitaxial stack 10. The point of the second protective sidewall 42 farthest from the inflection point A is the lowest point of the second protective sidewall 42, and the horizontal height at the lowest point of the second protective sidewall 42 is not higher than the height of the lower surface 102 of the epitaxial stack 10. In other words, the second protective sidewall 42 extends downward at least to the lower surface 102 of the epitaxial stack 10, and can also continue to extend downward to the edge of the substrate 22.

[0037] Taking the upper surface 101 of the epitaxial stack 10 as a reference plane, the angle between the extension line of the first protective sidewall 41 and the upper surface 101 of the epitaxial stack 10 is 80° to 100°.

[0038] In some embodiments, the light emitting diode further includes a protection layer 12 , a first electrode 14 , a dielectric layer 16 , a metal reflective layer 18 , a bonding layer 20 and a second electrode 24 .

[0039] The protection layer 12 covers the epitaxial stack 10. The sidewall morphology of the protection layer 12 may be the same as the morphology of the sidewall 40 of the protection layer.

[0040] The first electrode 14 is disposed on the upper surface 101 of the epitaxial stack 10. The first electrode 14 may be a single-layer structure, a double-layer structure or a multi-layer structure. The first electrode 14 may be made of metal materials, such as Cr, Pt, Au, Ni, Ti, Al and the like.

[0041] The dielectric layer 16 is disposed on the lower surface 102 of the epitaxial stack 10. The dielectric layer 16 has a plurality of through holes, and the plurality of through holes expose the epitaxial stack 10. The dielectric layer 16 is light-transmissive.

[0042] The metal reflective layer 18 is disposed on the side of the dielectric layer 16 away from the epitaxial stack 10, and the metal reflective layer 18 is connected to the epitaxial stack 10 through a through hole. The metal reflective layer 18 can be made of a metal material with high reflectivity. In some embodiments, a current diffusion layer 26 can be further disposed below the second semiconductor layer 105, and the current diffusion layer 26 plays a role in diffusing current. The material of the current diffusion layer 26 can include gallium phosphide, etc. The dielectric layer 16 covers the current diffusion layer 26, and the through hole of the dielectric layer 16 exposes part of the current diffusion layer 26, and the metal reflective layer 18 is electrically connected to the current diffusion layer 26 through the through hole.

[0043] The bonding layer 20 is disposed on the side of the metal reflective layer 18 away from the epitaxial stack 10. The bonding layer 20 is used to bond the substrate 22 and the metal reflective layer 18 to improve the connection strength of the overall structure. The bonding layer 20 can be made of metal elements such as gold, tin, titanium, tungsten, nickel, platinum, indium, etc. The bonding layer 20 can be a single-layer structure or a multi-layer structure, and can be a combination of multiple materials.

[0044] The substrate 22 is disposed on a side of the bonding layer 20 away from the epitaxial stack 10 .

[0045] The second electrode 24 is disposed on a side of the substrate 22 away from the epitaxial stack 10 .

[0046] See also Figure 6 , Figure 6 is a schematic diagram of the structure of a light emitting diode provided by the third embodiment of the present invention. Figure 1As for the light-emitting diode, the difference of this embodiment is mainly that the second epitaxial sidewall 32 at least extends over the entire second semiconductor layer 105. For example, the second epitaxial sidewall 32 may further extend downward to the underlying dielectric layer 16.

[0047] An embodiment of the present invention further provides a light emitting device, which includes a light emitting diode. The light emitting diode can be the light emitting diode described in any of the above embodiments.

[0048] In summary, a light-emitting diode and a light-emitting device provided by an embodiment of the present invention form two inclined side walls by setting an inflection point A, and the inflection point A is located on the side wall of the first semiconductor layer 103, so that after the chip is cut, it is easier to clean the organic matter in the degumming process, and it is also beneficial to the continuity of other subsequent protective layers covering the side walls; and because the inflection point A is set at the first semiconductor layer 103, the light-emitting layer 104 and the second semiconductor layer 105 are not exposed, so even if some organic matter remains, the problem of leakage burns can be avoided, and it can also ensure that the light-emitting layer 104 has a flat surface and is not easy to retain organic matter, thereby reducing the risk of leakage.

[0049] In addition, those skilled in the art should understand that, although there are many problems in the prior art, each embodiment or technical solution of the present invention can be improved in only one or several aspects, without having to solve all the technical problems listed in the prior art or background technology at the same time. Those skilled in the art should understand that the content not mentioned in a claim should not be used as a limitation on the claim.

[0050] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A light emitting diode, characterized in that: The light emitting diode comprises: An epitaxial stack having an upper surface and a lower surface opposite to each other, wherein the epitaxial stack comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer in sequence from the upper surface to the lower surface; The epitaxial stack has a first epitaxial sidewall and a second epitaxial sidewall on the same side, the first epitaxial sidewall is a partial sidewall of the first semiconductor layer, the second epitaxial sidewall extends from a partial sidewall of the second semiconductor layer toward the upper surface of the epitaxial stack, through the sidewall of the light-emitting layer until it extends to the sidewall of the first semiconductor layer, the first epitaxial sidewall is connected to the second epitaxial sidewall, an inflection point is formed at the connection between the first epitaxial sidewall and the second epitaxial sidewall, and an angle is formed at the inflection point, and the angle is greater than 90°.

2. The light emitting diode according to claim 1, characterized in that: The first epitaxial sidewall is a portion extending from the upper surface of the epitaxial stack toward the lower surface of the epitaxial stack to the inflection point, and the inflection point is located on the sidewall of the first semiconductor layer.

3. The light emitting diode according to claim 1, characterized in that: The angle ranges from 91° to 120°.

4. The light emitting diode according to claim 1, characterized in that: The distance from the inflection point to the upper surface of the light emitting layer is defined as d1, the thickness of the first semiconductor layer is defined as H1, and 0.05H1≤d1≤0.4H1.

5. The light emitting diode according to claim 1, characterized in that: Taking the upper surface of the epitaxial stack as a reference plane, the angle between the extension line of the first epitaxial side wall and the upper surface of the epitaxial stack is 80° to 100°.

6. The light emitting diode according to claim 1, characterized in that: The vertical projection length of the second epitaxial sidewall located at one side of the epitaxial stack on the lower surface of the epitaxial stack is in the range of 10 to 30 μm.

7. The light emitting diode according to claim 1, characterized in that: A current diffusion layer is further disposed below the second semiconductor layer.

8. The light emitting diode according to claim 1, characterized in that: The light emitting diode further includes a protection layer, wherein the protection layer covers the first epitaxial sidewall and the second epitaxial sidewall of the epitaxial stack.

9. The light emitting diode according to claim 1, characterized in that: The light-emitting diode further includes a first electrode, a dielectric layer, a metal reflective layer, a bonding layer, a substrate, and a second electrode. The first electrode is arranged on the upper surface of the epitaxial stack, the dielectric layer is arranged on the lower surface of the epitaxial stack, the dielectric layer has a plurality of through holes, and the plurality of through holes expose the epitaxial stack. The metal reflective layer is arranged on a side of the dielectric layer away from the epitaxial stack, the metal reflective layer is connected to the epitaxial stack through the through holes, the bonding layer is arranged on a side of the metal reflective layer away from the epitaxial stack, the substrate is arranged on a side of the bonding layer away from the epitaxial stack, and the second electrode is arranged on a side of the substrate away from the epitaxial stack.

10. The light emitting diode according to claim 1, characterized in that: The second epitaxial sidewall at least extends over the entire second semiconductor layer.

11. A light emitting diode, characterized in that: The light emitting diode comprises: An epitaxial stack, the epitaxial stack having an upper surface and a lower surface opposite to each other, the epitaxial stack sequentially comprising a first semiconductor layer, a light emitting layer and a second semiconductor layer along a direction from the upper surface to the lower surface; A protective layer, disposed outside the epitaxial stack and covering a portion of the sidewall of the epitaxial stack; Among them, the outermost part of the protective layer is defined as the side wall of the protective layer, and the side wall of the protective layer has an inflection point at the height position of the first semiconductor, a portion of the inflection point extends toward the upper surface direction of the epitaxial stack to form a first protective side wall, and a portion of the inflection point extends toward the lower surface direction of the epitaxial stack to form a second protective side wall, and the first protective side wall and the second protective side wall form an angle at the inflection point, and the angle is greater than 90°.

12. The light emitting diode according to claim 11, characterized in that: The angle ranges from 91° to 120°.

13. The light emitting diode according to claim 11, characterized in that: The protective layer is a single-layer structure or a multi-layer structure.

14. The light emitting diode according to claim 11, characterized in that: The point of the first protective sidewall that is farthest from the inflection point is the highest point of the first protective sidewall, and the horizontal height of the highest point of the first protective sidewall is not lower than the height of the upper surface of the epitaxial stack.

15. The light emitting diode according to claim 11, characterized in that: The point of the second protective sidewall that is farthest from the inflection point is the lowest point of the second protective sidewall, and the horizontal height of the lowest point of the second protective sidewall is not higher than the height of the lower surface of the epitaxial stack.

16. The light emitting diode according to claim 11, characterized in that: The distance from the inflection point to the upper surface of the light-emitting layer is d1, the thickness of the first semiconductor layer is H1, and 0.05H1≤d1≤0.4H1.

17. The light emitting diode according to claim 11, characterized in that: Taking the upper surface of the epitaxial stack as a reference plane, the angle between the extension line of the first protective sidewall and the upper surface of the epitaxial stack is 80° to 100°.

18. A light emitting device, characterized in that: The light emitting device comprises a light emitting diode, and the light emitting diode is a light emitting diode as claimed in any one of claims 1 to 17.

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