Miniature light-emitting diode chip, manufacturing method and miniature light-emitting diode device

Abstract

The invention provides a miniature light-emitting diode chip, a manufacturing method and a miniature light-emitting diode device. The manufacturing method comprises the following steps: providing an initial light-emitting framework comprising a plurality of mesa structures; forming a first passivation layer on the surface of the initial light-emitting framework; forming a shading layer in a partial side wall area of each mesa structure; and exposing the electrode area of each mesa structure to obtain the micro light-emitting diode chip. On the basis, the micro light-emitting diode chip provided by the invention not only can reduce the light crosstalk of the side wall, but also can keep the electrical disconnection between the mesa structures.

Description

Technical Field

[0001] The present application relates to the field of semiconductor light emitting technology, and in particular to a micro light emitting diode chip and a manufacturing method thereof, and a micro light emitting diode device. Background Art

[0002] Micro-LED (Micro-Light Emitting Diode) display technology is a display technology that miniaturizes and arrays the traditional LED (Light Emitting Diode) structure and uses CMOS (Complementary Metal Oxide Semiconductor) or TFT (Thin Film Transistor) to make driving circuits to achieve addressing control and individual drive of each pixel.

[0003] Among them, the spacing between adjacent pixels in the Micro-LED chip is small, and there is a serious optical crosstalk problem between the pixels. Therefore, it is urgent to provide a Micro-LED chip with less optical crosstalk. Summary of the invention

[0004] The purpose of the present application is to provide a micro light emitting diode chip and a manufacturing method, and a micro light emitting diode device.

[0005] In order to solve the above problems, in a first aspect, the present application provides a method for manufacturing a micro light emitting diode chip, comprising:

[0006] providing an initial light emitting architecture including a plurality of mesa structures;

[0007] forming a first passivation layer on the surface of the initial light-emitting structure;

[0008] forming a light shielding layer on the surface of a portion of the sidewall area of ​​each of the mesa structures;

[0009] The electrode region of each mesa structure is exposed, and the micro light emitting diode chip is obtained.

[0010] Optionally, forming a light shielding layer on the surface of a portion of the sidewall area of ​​each of the mesa structures includes:

[0011] A light shielding layer is formed on the surfaces of two adjacent sidewall regions of each mesa structure.

[0012] Optionally, the initial light-emitting structure includes a plurality of mesa arrays spaced from each other, each of the mesa arrays includes a plurality of mesa structures, each of the mesa structures includes a first side wall, a second side wall, a third side wall and a fourth side wall connected in sequence, the first side wall is arranged opposite to the third side wall, and the second side wall is arranged opposite to the fourth side wall; wherein,

[0013] The step of forming a light shielding layer on a surface of a portion of the sidewall region of each mesa structure comprises:

[0014] A first shading layer is formed on the surface of the first side wall and the second side wall of each of the mesa structures in one of two adjacent mesa arrays, and a second shading layer is formed on the surface of the second side wall and the third side wall of each of the mesa structures in the adjacent mesa arrays.

[0015] Optionally, the initial light-emitting architecture includes a first mesa array and a second mesa array arranged alternately and spaced apart, and the first mesa array and the second mesa array each include a plurality of mesa structures; the sidewall area of ​​each mesa structure includes a first area and a second area that are spaced apart from each other or partially overlapped, and the angle between two edges of the first area and the second area and the center point of the mesa structure is greater than 0 degrees and less than 180 degrees; wherein,

[0016] The step of forming a light shielding layer on a surface of a portion of the sidewall region of each mesa structure comprises:

[0017] A first light shielding layer is formed in the first region of each mesa structure in the first mesa array, and a second light shielding layer is formed in the second region of each mesa structure in the second mesa array.

[0018] Optionally, forming a light shielding layer on the surface of a portion of the sidewall area of ​​each of the mesa structures includes:

[0019] forming a light shielding layer on a partial sidewall region of each of the mesa structures, and forming a light shielding mesa including the light shielding layer and the first passivation layer;

[0020] A second passivation layer is formed on the surface of the light shielding mesa.

[0021] In a second aspect, the present application further provides a micro light emitting diode chip, comprising:

[0022] An initial light emitting structure includes a substrate and a plurality of mesa structures formed on the substrate;

[0023] A first passivation layer is disposed on a side of the initial light-emitting structure facing away from the substrate;

[0024] The light shielding layer is disposed on the surface of a part of the sidewall region of each of the mesa structures, and the light shielding layer and the first passivation layer expose the electrode region of each of the mesa structures.

[0025] Optionally, the light shielding layer is disposed on surfaces of two adjacent side wall regions of each of the mesa structures.

[0026] Optionally, the initial light-emitting structure includes a plurality of mesa arrays spaced from each other, each of the mesa arrays includes a plurality of mesa structures, each of the mesa structures includes a first side wall, a second side wall, a third side wall and a fourth side wall connected in sequence, the first side wall is arranged opposite to the third side wall, and the second side wall is arranged opposite to the fourth side wall; the light shielding layer includes a first light shielding layer and a second light shielding layer;

[0027] The first light-shielding layer is disposed on the surfaces of the first side wall and the second side wall of each mesa structure of one of two adjacent mesa arrays, and the second light-shielding layer is disposed on the surfaces opposite to the second side wall and the third side wall of each mesa structure of the adjacent mesa arrays.

[0028] Optionally, the initial light-emitting architecture includes a first mesa array and a second mesa array arranged alternately, and the first mesa array and the second mesa array each include a plurality of mesa structures; the sidewall area of ​​each mesa structure includes a first area and a second area that are spaced apart from each other or partially overlapped, and the angle between the two edges of the first area and the second area and the center point of the mesa structure is greater than 0 degrees and less than 180 degrees; the shading layer includes a first shading layer and a second shading layer; wherein,

[0029] The first light shielding layer is disposed in the first region of each of the mesa structures in the first mesa array, and the second light shielding layer is disposed in the second region of each of the mesa structures in the second mesa array.

[0030] Optionally, the initial light-emitting structure including the light-shielding layer and the first passivation layer forms a light-shielding table;

[0031] The micro light emitting diode chip further comprises:

[0032] The second passivation layer is arranged on the surface of the light shielding table.

[0033] In a third aspect, the present application further provides a micro light emitting diode device, comprising:

[0034] A micro light emitting diode chip prepared by the method for preparing a micro light emitting diode chip as described above; or, a micro light emitting diode chip as described above; and

[0035] A driving chip is bonded to the micro light emitting diode chip.

[0036] Based on the above technical scheme, the micro-LED chip and manufacturing method provided by the present application, and the micro-LED device, the first passivation layer is formed on the surface of the initial light-emitting structure, the light-shielding layer is formed on the surface of a part of the sidewall area of ​​each mesa structure, the first passivation layer can separate the light-shielding layer and the mesa structure, and can avoid the adverse effect of the light-shielding layer on the mesa structure; at the same time, the light-shielding layer can block the light emitted by the pixel points formed by the mesa structure, and can avoid the light crosstalk between multiple pixel points; moreover, the light-shielding layer of the present application does not cover the entire sidewall area of ​​the mesa structure, and there can be two layers of light-shielding layers between the sidewall areas of two adjacent mesa structures at different times. The scheme of the present application can make a larger spacing area between two adjacent mesa structures, which can not only make the light-shielding layer realize production in the production process, but also avoid the electrical interconnection of two adjacent mesa structures and cause short circuit. Therefore, the micro-LED chip of the present application can reduce the sidewall light crosstalk, and can maintain the electrical disconnection between the mesa structures to improve the reliability of the micro-LED chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the technical solution in this application, the following is a brief introduction to the drawings required for the description of the embodiments. Obviously, the drawings described below are only some embodiments of this application, and those skilled in the art can obtain other drawings based on these drawings without creative work.

[0038] In order to more completely understand the present application and its beneficial effects, the following description will be given in conjunction with the accompanying drawings, wherein the same figure numbers represent the same parts in the following description.

[0039] Figure 1 A schematic diagram of a process for manufacturing a micro light emitting diode chip provided in an embodiment of the present application;

[0040] Figure 2 A schematic diagram of the structure of the initial light-emitting architecture provided in an embodiment of the present application;

[0041] Figure 3 A schematic diagram of a structure after the first passivation layer is formed in the initial light-emitting structure provided in an embodiment of the present application;

[0042] Figure 4 A schematic diagram of a structure after a light shielding layer is formed on the initial light-emitting structure provided in an embodiment of the present application;

[0043] Figure 5 A schematic diagram of the first structure of a micro light emitting diode chip provided in an embodiment of the present application;

[0044] Figure 6 A schematic top view of a micro light emitting diode chip provided in an embodiment of the present application;

[0045] Figure 7 for Figure 6 A cross-sectional view of the micro light emitting diode chip shown along line L2;

[0046] Figure 8 A second structural schematic diagram of a micro light emitting diode chip provided in an embodiment of the present application;

[0047] Fig. 9 A third structural schematic diagram of the micro light emitting diode chip provided in the embodiment of the present application;

[0048] Fig.10 A fourth structural schematic diagram of the micro light emitting diode chip provided in the embodiment of the present application;

[0049] Fig.11 A schematic diagram of a process for manufacturing a micro light emitting diode device provided in an embodiment of the present application;

[0050] Fig.12 A schematic diagram of the structure of a driver chip provided in an embodiment of the present application;

[0051] Fig.13 A schematic diagram of a bonding structure provided in an embodiment of the present application;

[0052] Fig.14 A schematic diagram of the structure of a micro light emitting diode device provided in an embodiment of the present application;

[0053] Fig.15 Another schematic diagram of the structure of the micro light emitting diode device provided in the embodiment of the present application;

[0054] Fig.16 A schematic diagram of the structure of a display device provided in an embodiment of the present application.

[0055] The reference numerals are as follows:

[0056] 10. Micro-LED device; 20. Display device; 100. Micro-LED chip; 200. Driver chip; 300. Bonding structure; 400. Optical structure; 110. Initial light-emitting architecture; 120. First passivation layer; 130. Shading layer; 140. Second passivation layer; 150. Solder joint structure; 210. Second substrate; 220. Driver circuit; 230. Driver pad; 240. Electrical connection; 510. Quantum dot color film structure; 520. Filter layer; 530. Glass layer; 111. First substrate; 112. Table structure; 113. Light-emitting area; 114. Table surface queue; 131, first shading layer; 132, second shading layer; 511, black matrix structure; 512, quantum dot color film; 1121, first semiconductor layer; 1122, light-emitting layer; 1123, second semiconductor layer; 1124, first electrode layer; 1125, second electrode layer; 1126, buffer layer; 1127, current diffusion layer; 1141, first table queue; 1142, second table queue; a1, first side wall; a2, second side wall; a3, third side wall; a4, fourth side wall; a5, first area; a6, second area; H1, first direction; H2, second direction. DETAILED DESCRIPTION

[0057] The following will be combined with the appendix of this application Figure 1 To Attachment Fig.16 The technical solutions in this application are clearly and completely described in the following embodiments. Obviously, the described embodiments are only part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of this application.

[0058] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0059] The following is a detailed description with reference to specific embodiments. It should be noted that the embodiments of the present application can be presented in various forms, some examples of which will be described below.

[0060] Please refer to Figure 1 , Figure 1 A schematic flow chart of a method for manufacturing a micro-light emitting diode chip 100 provided in an embodiment of the present application. The method for manufacturing a micro-light emitting diode chip 100 of the present application includes:

[0061] In S11 , an initial light emitting architecture 110 including a plurality of mesa structures 112 is provided.

[0062] In this step, please refer to Figure 2 , Figure 2 A schematic diagram of the structure of an initial light-emitting architecture 110 provided in an embodiment of the present application. The initial light-emitting architecture 110 includes a substrate, such as a first substrate 111, and a plurality of (two or more) mesa structures 112 formed on the substrate, such as the first substrate 111, wherein adjacent mesa structures 112 are arranged at intervals, and each mesa structure 112 can form a pixel.

[0063] like Figure 2 As shown, each mesa structure 112 includes a first semiconductor layer 1121, a light-emitting layer 1122, a second semiconductor layer 1123 and a first electrode layer 1124 which are sequentially stacked on a first substrate 111. The first substrate 111 is used to support the film structure thereon, and the first substrate 111 is a sapphire substrate, a silicon substrate or a silicon carbide substrate, etc. The light-emitting layer 1122 is a quantum well layer, for example, the light-emitting layer 1122 is an indium gallium nitride quantum well layer, or an indium gallium nitride / gallium nitride multi-quantum well layer. The first semiconductor layer 1121 is one of an N-type semiconductor layer and a P-type semiconductor layer, and the second semiconductor layer 1123 is the other of an N-type semiconductor layer and a P-type semiconductor layer, wherein the N-type semiconductor layer is an N-type gallium nitride layer or an N-type gallium arsenide layer, and the P-type semiconductor layer is a P-type gallium nitride layer or a P-type aluminum gallium nitride layer. For example, in Figure 2 In the embodiment shown, the first semiconductor layer 1121 is an N-type semiconductor layer, the second semiconductor layer 1123 is a P-type semiconductor layer, and the mesa structure 112 is a gallium nitride mesa structure (GaN Mesa). The first electrode layer 1124 is disposed on a side of the second semiconductor layer 1123 away from the light emitting layer 1122 and is electrically connected to the second semiconductor layer 1123.

[0064] like Figure 2As shown, the initial light-emitting structure 110 further includes a second electrode layer 1125, which is disposed in an exposed area of ​​the first semiconductor layer 1121 and is electrically connected to the first semiconductor layer 1121. The first electrode layer 1124 and the second electrode layer 1125 are used to be electrically connected to the driver chip 200 described later. The initial light-emitting structure 110 further includes a buffer layer 1126, which can relieve the stress generated by the lattice mismatch and thermal expansion coefficient mismatch between the film layer on it and the first substrate 111. The buffer layer 1126 can be, but is not limited to, silicon nitride, silicon oxide layer, gallium nitride layer or aluminum nitride layer. Each mesa structure 112 of the micro-LED chip 100 can also include a current diffusion layer 1127 formed on a side of the second semiconductor layer 1123 away from the first substrate 111. The current diffusion layer 1127 can evenly distribute the current to the entire second semiconductor layer 1123 (such as a P-type gallium nitride layer), thereby effectively improving the luminous efficiency of the micro-LED chip 100.

[0065] It should be noted that Figure 2 This is only an exemplary description of the initial light-emitting architecture 110 of the present application. The initial light-emitting architecture 110 of the present application can also be other structures.

[0066] In S12 , a first passivation layer 120 is formed on the surface of the initial light emitting structure 110 .

[0067] In this step, a first passivation layer 120 is formed on the surface of the initial light emitting structure 110 away from the first substrate 111 by plasma enhanced chemical vapor deposition (PECVD), thin film deposition, atomic layer deposition (ALD) and the like. Figure 3 As shown, Figure 3 A structural schematic diagram of the initial light-emitting structure 110 provided in an embodiment of the present application after the first passivation layer 120 is formed. The first passivation layer 120 is arranged in contact with the mesa structure 112 and covers all the mesa structures 112 and the spacing areas between the mesa structures 112. The first passivation layer 120 is an integral structure and can form a step shape.

[0068] In some examples, the material of the first passivation layer 120 includes insulating materials such as silicon oxide, silicon nitride and / or aluminum oxide. In some examples, the thickness of the first passivation layer 120 is between 100 micrometers (μm) and 200 μm, for example, the thickness of the first passivation layer 120 is about 100 μm, 150 μm or 200 μm, and further, the thickness of the first passivation layer 120 is about 130 μm. The thickness of the first passivation layer 120 of the present application is between 100 μm and 200 μm. The first passivation layer 120 is not too thin so that the first passivation layer 120 cannot separate the light shielding layer 130 from the mesa structure 112 in the following text. In particular, after the step of "exposing the electrode area of ​​each mesa structure 112" is performed in the following text, the overly thin first passivation layer 120 cannot separate the light shielding layer 130 from the electrode area of ​​the mesa structure 112 in a good manner. At the same time, the first passivation layer 120 of the present application is not too thick so that the distance between two adjacent mesa structures 112 is small, which not only reduces the setting space of the light shielding layer 130, but also makes the adjacent light shielding layers 130 easily electrically interconnected and cause adverse effects, and also increases the thickness of the entire micro-LED chip 100, which is not conducive to the light and thin design of the micro-LED chip 100. The above thickness design of the first passivation layer 120 of the present application can take into account both the safety and light and thin design of the micro-LED chip 100.

[0069] In S13 , a light shielding layer 130 is formed on a surface of a portion of the sidewall region of each mesa structure 112 .

[0070] Each mesa structure 112 protrudes from the first substrate 111 along the thickness direction of the initial light-emitting structure 110, so that each mesa structure 112 has a sidewall region and a top surface region protruding from the first substrate 111, the top surface region is arranged opposite to the first substrate 111, and the sidewall region is located between the top surface region and the first substrate 111. In this step, Figure 4 As shown, Figure 4 A schematic diagram of a structure after the initial light-emitting structure 110 provided in the embodiment of the present application forms a light-shielding layer 130. The light-shielding layer 130 is formed on a side of a part of the sidewall region of each mesa structure 112 away from the first passivation layer 120. The first passivation layer 120 separates the light-shielding layer 130 from the mesa structure 112, which can avoid the light-shielding layer 130 from affecting the mesa structure 112. In particular, when the light-shielding layer 130 is made of metal, the first passivation layer 120 can avoid the light-shielding layer 130 from being electrically connected to the mesa structure 112 and causing adverse effects. At the same time, the light-shielding layer 130 does not cover the entire sidewall region of the mesa structure 112, which means that there are no two layers of light-shielding layers 130 between the sidewall regions of two adjacent mesa structures 112 at the same time. The light-shielding layer 130 of the present application can make a larger spacing region between two adjacent mesa structures 112, which can avoid the electrical interconnection of two adjacent mesa structures 112 and cause a short circuit.

[0071] For example, in contrast, when the initial light-emitting architecture 110 forms a light shielding layer 130 on the entire sidewall region of the mesa structure 112, the spacing between the sidewall regions of two adjacent mesa structures 112 is small due to the presence of two layers of light shielding layer 130, and the two adjacent mesa structures 112 are easily electrically interconnected and cause a short circuit. In addition, when the pixel density of the micro-LED chip 100 is high, so that the pixel size is less than 50μm and the spacing between adjacent pixels is about 1μm, it is difficult to achieve the process of forming the light shielding layer 130 on the entire sidewall region of the mesa structure 112. However, the present application forms the light shielding layer 130 on a portion of the sidewall region of each mesa structure 112, so that there can be a larger spacing area between the two adjacent mesa structures 112, and the light shielding layer 130 can be produced in the production process, and it can also avoid the electrical interconnection of the two adjacent mesa structures 112 and cause a short circuit.

[0072] In some examples, the light shielding layer 130 is a metal layer, an aluminum oxide layer, or a silicon nitride layer. When the light shielding layer 130 is a metal layer, the light shielding layer 130 has better light reflection performance and the light shielding layer 130 is not easy to absorb light. Compared with the light shielding layer 130 being a black glue material solution, the light shielding layer 130 made of metal in the present application is not easy to cause the brightness of the micro-LED chip 100 to decrease due to light absorption. The light shielding layer 130 made of metal can ensure the optical performance of the micro-LED chip 100. In this step, the light shielding layer 130 can be formed on the surface of a part of the sidewall area of ​​each mesa structure 112 by a metal sputtering process.

[0073] In some examples, the thickness of the light shielding layer 130 is between 100 μm and 500 μm, for example, the thickness of the light shielding layer 130 is about 100 μm, 200 μm, 300 μm, 400 μm or 500 μm. Further, the thickness of the light shielding layer 130 is between 200 μm and 250 μm, for example, the thickness of the light shielding layer 130 is about 200 μm, 210 μm, 220 μm, 230 μm, 240 μm or 250 μm. The thickness of the light shielding layer 130 of the present application is between 100 μm and 500 μm, and the light shielding layer 130 is not too thin to make it difficult to form the light shielding layer 130 on the first passivation layer 120 in the production process. At the same time, the light shielding layer 130 is not too thick to make the light shielding layers 130 of two adjacent mesa structures 112 electrically interconnected and cause adverse effects.

[0074] In S14 , the electrode region of each mesa structure 112 is exposed, and the micro light emitting diode chip 100 is obtained.

[0075] In this step, the film structure covering the electrode region of each mesa structure 112 is removed by photolithography, etching, etc. to expose the electrode region of each mesa structure 112. Here, the electrode region of the mesa structure 112 is the region where the aforementioned first electrode layer 1124 is located. Figure 5 As shown, Figure 5 The first structural schematic diagram of the micro-light emitting diode chip 100 provided in the embodiment of the present application shows that after the first passivation layer 120 (including the shading layer 130 if there is a shading layer 130) covering the surface of the first electrode layer 1124 facing away from the first substrate 111 is removed, the first electrode layer 1124 is exposed to the air to facilitate the subsequent formation of the solder joint structure 150.

[0076] In some embodiments, the method for manufacturing the micro-LED chip 100 of the present application further removes the film structure covering the second electrode layer 1125 of the initial light-emitting structure 110 through a photolithography process, an etching process, etc., and exposes the second electrode layer 1125 .

[0077] In the manufacturing method of the micro-LED chip 100 of the embodiment of the present application, a first passivation layer 120 is formed on the surface of the initial light-emitting structure 110, and a light-shielding layer 130 is formed on the surface of a part of the sidewall area of ​​each mesa structure 112. On the one hand, the first passivation layer 120 separates the light-shielding layer 130 and the mesa structure 112, which can avoid the adverse effect of the light-shielding layer 130 on the mesa structure 112; on the other hand, the light-shielding layer 130 can block the light emitted by the pixel points formed by the mesa structure 112, which can avoid the light crosstalk between multiple pixel points; and the light-shielding layer 130 does not cover the entire sidewall area of ​​the mesa structure 112, and two layers of light-shielding layers 130 may not exist simultaneously between the sidewall areas of two adjacent mesa structures 112. The solution of the present application can make a larger spacing area between two adjacent mesa structures 112, which not only makes it possible to realize the production of the light-shielding layer 130 in the production process, but also can avoid the electrical interconnection of two adjacent mesa structures 112 and cause a short circuit. Therefore, the micro-LED chip 100 of the present application can reduce the sidewall light crosstalk and maintain the electrical disconnection between the mesa structures 112 to improve the reliability of the micro-LED chip 100 .

[0078] In some embodiments, step S13 forms a light shielding layer 130 on the surface of a portion of the sidewall region of each mesa structure 112, including: forming the light shielding layer 130 on the surface of two adjacent sidewall regions of each mesa structure 112. In this step, the light shielding layer 130 covers the surface of two adjacent sidewall regions of each mesa structure 112, and the light shielding layer 130 does not cover the entire sidewall region of the mesa structure 112. The solution of the present application can further prevent the two adjacent mesa structures 112 from being electrically interconnected and causing a short circuit.

[0079] In some embodiments, please refer to Figure 6 , Figure 6 A schematic top view of a micro-LED chip 100 provided in an embodiment of the present application, wherein a plurality of mesa structures 112 on a first substrate 111 of an initial light-emitting structure 110 are arranged in an array, and each mesa structure 112 includes a light-emitting region 113, which is a surface region of the first electrode layer 1124 in the aforementioned embodiment away from the first substrate 111. The initial light-emitting structure 110 includes a plurality of mesa arrays 114 arranged along a first direction H1 and spaced from each other, and each mesa array 114 includes a plurality of mesa structures 112 arranged along a second direction H2, and each mesa structure 112 includes a first side wall a1, a second side wall a2, and a third side wall a3 connected in sequence, and the third side wall a3 is arranged opposite to the first side wall a1. Figure 6 As shown, each mesa structure 112 further includes a fourth side wall a4, the fourth side wall a4 is arranged opposite to the second side wall a2, and the first side wall a1 and the third side wall a3 are located between the second side wall a2 and the fourth side wall a4. The manufacturing method of the micro-LED chip 100 of the present application further includes: forming a light shielding layer 130, such as a first light shielding layer 131, on the surface of the first side wall a1 and the second side wall a2 of each mesa structure 112 in a mesa array 114, and forming a light shielding layer 130, such as a second light shielding layer 132, on the surface of the second side wall a2 and the third side wall a3 of each mesa structure 112 in an adjacent mesa array 114.

[0080] Understandably, please combine Figure 4 , Figure 6 Please also refer to Figure 7 , Figure 7 for Figure 6 A cross-sectional view of the micro-LED chip 100 along the straight line L2 is shown. The initial light-emitting structure 110 includes table arrays 114a, table arrays 114b, table arrays 114c, table arrays 114d, etc., which are arranged at intervals along the first direction H1. Taking the table arrays 114a and 114b as examples, the light shielding layer 130, such as the first light shielding layer 131, covers the first side wall a1 and the second side wall a2 of each table structure 112 in the table array 114a. The light shielding layer 130, such as the second light shielding layer 132, covers the second side wall a2 and the third side wall a3 of each table structure 112 in the table array 114b. When the light shielding layer 130 is arranged along the straight line L2, the initial light-emitting structure 110 includes table arrays 114a, 114b, 114c, 114d ... Figure 6 When the lines L1 and L3 of the micro-LED chip 100 are cut into sections, the following can be obtained: Figure 4 The cross-sectional view shown in Figure 6 When the line L2 of the micro-LED chip 100 is cut into a cross section, the following can be obtained: Figure 7 The cross-sectional view shown. Figure 4 and Figure 7It can be seen that the light shielding layer 130 of the present application only covers two adjacent side wall regions of each mesa structure 112, and the light shielding layer 130 is provided on the same side wall region on one side of each mesa structure 112 in the same mesa array 114; and in two adjacent mesa arrays 114, the light shielding layer 130 covers different (not completely the same) side wall regions on one side of the mesa structures 112 in the two mesa arrays 114, so that the light shielding layer 130 can cover multiple mesa structures 112 in a single-side alternating manner. In this way, Figure 6 In the figure, taking the mesa structure 112 a as an example, the mesa structure 112 a is enclosed and shielded by the light shielding layers 130 of itself and the two adjacent mesa structures 112 b and 112 c. The mesa structure 112 can be enclosed and shielded by fewer light shielding layers 130 .

[0081] In contrast, assuming that the light shielding layer 130 of the present application is disposed on the first side wall a1 and the second side wall a2 of each mesa structure 112, then one mesa structure 112 needs to be covered by itself and the three mesa structures 112 nearby. In this solution, the mesa structure 112 needs to be covered by more light shielding layers 130. Obviously, the light shielding layer 130 of the present application covers multiple mesa structures 112 in a single-side alternating manner, and the mesa structure 112 can be enclosed and shielded by fewer light shielding layers 130.

[0082] It is understandable that the “light shielding layer 130 is disposed on a certain structure” described in the embodiments of the present application includes that the light shielding layer 130 completely covers the structure, and also includes that the light shielding layer 130 covers a portion of the structure. Figure 6 As shown, the ratio of the projection area of ​​the light-shielding layer 130 on the first side wall a1, the second side wall a2 or the third side wall a3 to the area of ​​the first side wall a1, the second side wall a2 or the third side wall a3 is greater than one half and less than or equal to three quarters. At this time, for a certain side wall, the light-shielding layer 130 covers most of the area of ​​the side wall. The light-shielding layer 130 can block more light, and the micro-LED chip 100 has better anti-light crosstalk performance.

[0083] In the embodiment of the present application, a first light-shielding layer 131 is formed on the surface of the first side wall a1 and the second side wall a2 of each mesa structure 112 of one mesa row 114 of two adjacent mesa rows 114, and a second light-shielding layer 132 is formed on the surface of the second side wall a2 and the third side wall a3 of each mesa structure 112 of the adjacent mesa rows 114. The first light-shielding layer 131 and the second light-shielding layer 132 can cover the plurality of mesa structures 112 in a single-sided alternating manner. The micro-LED chip 100 of the present application can be spaced by alternating single-sided light-shielding side walls, which can not only ensure the uniformity of light emission of the micro-LED chip 100, but also prevent sidewall light crosstalk, and can also keep the electrical connection between different mesa structures 112 (pixels) disconnected and improve the safety of the micro-LED chip 100.

[0084] It should be noted that the first light shielding layer 131 and the second light shielding layer 132 of the embodiment of the present application can also be arranged on other side walls of the mesa structure 112. For example, the present application can also form the first light shielding layer 131 on the surface of the first side wall a1 and the fourth side wall a4 of each mesa structure 112 of one mesa array 114 of two adjacent mesa arrays 114, and form the second light shielding layer 132 on the surface of the third side wall a3 and the fourth side wall a4 of each mesa structure 112 of the adjacent mesa arrays 114.

[0085] For some examples, please refer again to Figure 4 , Figure 6 and Figure 7 The initial light-emitting architecture 110 includes a first mesa array 1141 and a second mesa array 1142 that are alternately arranged, and the first mesa array 1141 and the second mesa array 1142 each include a plurality of mesa structures 112. The sidewall region of each mesa structure 112 includes a first region a5 and a second region a6 that are spaced apart from each other or partially overlapped, and the angles between the two edges of the first region a5 and the second region a6 and the center point of the mesa structure are both greater than 0 degrees and less than 180 degrees. The manufacturing method of the micro-light-emitting diode chip 100 of the present application further includes: forming a light-shielding layer 130, such as a first light-shielding layer 131, on the surface of the first region a5 of each mesa structure 112 of the first mesa array 1141, and forming a light-shielding layer 130, such as a second light-shielding layer 132, on the surface of the second region a6 of each mesa structure 112 of the second mesa array 1142.

[0086] It is understandable that if Figure 6As shown, the angle β1 between the two edges of the first area a5 and the center point of the mesa structure 112 is greater than 0 degrees and less than or equal to 180 degrees, and the angle β1 between the two edges of the second area a6 and the center point of the mesa structure 112 is greater than 0 degrees and less than or equal to 180 degrees. The first area a5 and the second area a6 can be formed in the semicircular area of ​​the light-emitting area 113. Among them, the first area a5 can be the area where the first side wall a1 and the second side wall a2 are located, and the second area a6 can be the area where the second side wall a2 and the third side wall a3 are located. Therefore, the surface of the first area a5 formed by the first side wall a1 and the second side wall a2 of each mesa structure 112 in the first mesa array 1141 can form a light shielding layer 130, such as the first light shielding layer 131, and the surface of the second area a6 formed by the second side wall a2 and the third side wall a3 of each mesa structure 112 in the second mesa array 1142 can form a light shielding layer 130, such as the second light shielding layer 132. The shading layer 130 can cover multiple mesa structures 112 in a single-sided alternating manner. The micro-LED chip 100 of the present application can be spaced by alternating single-sided shading side walls, which can not only ensure the uniformity of light emission of the micro-LED chip 100, but also prevent sidewall light crosstalk, and also keep the electrical connection between different mesa structures 112 (pixels) disconnected and improve the safety of the micro-LED chip 100.

[0087] It should be noted that, in some embodiments, the first area a5 can also be the area where the first side wall a1 and the fourth side wall a4 are located, and the second area a6 can be the area where the third side wall a3 and the fourth side wall a4 are located. In this case, the micro-LED chip 100 of the present application can also be spaced by alternating single-side light-shielding side walls.

[0088] For some examples, see Figure 8 , Figure 8The second structural schematic diagram of the micro-LED chip 100 provided in the embodiment of the present application, the step of forming a light shielding layer 130 on the surface of a part of the sidewall area of ​​each mesa structure 112 in the manufacturing method of the micro-LED chip 100, includes: forming a light shielding layer 130 on the surface of a part of the sidewall area of ​​each mesa structure 112, and forming a light shielding mesa containing the light shielding layer 130 and the first passivation layer 120; forming a second passivation layer 140 on the surface of the light shielding mesa. In this step, the second passivation layer 140 can be formed by a plasma enhanced chemical vapor deposition process (PECVD), a thin film deposition process, an atomic layer deposition process (ALD), etc., and the second passivation layer 140 covers the surface of the light shielding layer 130 and a part of the first passivation layer 120. Among them, the material of the second passivation layer 140 can include insulating materials such as silicon oxide, silicon nitride and / or aluminum oxide. The thickness of the second passivation layer 140 can be between 100 μm and 150 μm, for example, the thickness of the second passivation layer 140 is about 100 μm, 110 μm, 120 μm, 130 μm, 140 μm or 150 μm, and further, the thickness of the second passivation layer 140 is about 100 μm. The second passivation layer 140 is provided in the present application, and the second passivation layer 140 can protect the light shielding layer 130 and prevent the adverse effects of substances such as air on the light shielding layer 130. At the same time, the thickness of the second passivation layer 140 is between 100 μm and 150 μm. The second passivation layer 140 is not too thick to increase the thickness of the entire micro-LED chip 100, which is not conducive to the lightweight design of the micro-LED chip 100; at the same time, the second passivation layer 140 is not too thin to make the second passivation layer 140 unable to form a good protective layer. A too thin second passivation layer 140 is not easy to prevent the erosion of the light-shielding layer 130 by water vapor and the like; the thickness of the second passivation layer 140 of the present application is between 100 μm and 150 μm, which can take into account both the protection of the light-shielding layer 130 and the lightweight design of the micro-LED chip 100.

[0089] It should be noted that the second passivation layer 140 may not be provided in the present application. For example, when the light shielding layer 130 is a non-metallic layer such as a silicon nitride layer, the light shielding layer 130 may be located on the outer surface of the micro LED chip 100 and directly in contact with the air.

[0090] For some examples, see Fig. 9 , Fig. 9The third structural schematic diagram of the micro-LED chip 100 provided in the embodiment of the present application. Each mesa structure 112 in the embodiment of the present application is a prism structure. The prism structure is a type of polyhedron in geometry, which refers to the geometric shape between the cross section and the bottom surface after a pyramid structure is cut by a plane parallel to its bottom surface. The cross section is also called the upper bottom surface of the prism structure, and the bottom surface of the original pyramid structure is called the lower bottom surface. In the present application, the lower bottom surface of the mesa structure 112 is connected to the first substrate 111, and the upper bottom surface of the mesa structure 112 is its light-emitting surface, and the mesa structure 112 forms a prism structure that is narrow at the top and wide at the bottom. In the present application, the mesa structure 112 is arranged in the prism structure, and the first passivation layer 120, the light-shielding layer 130 and the second passivation layer 140 can fit more closely with the mesa structure 112, which can improve the step coverage of each layer, thereby enhancing the reliability of the micro-LED chip 100 and increasing the light-emitting effect of the micro-LED chip 100. The micro-LED chip 100 of the present application has better performance.

[0091] Based on the above description, the present embodiment also provides a micro-LED chip 100, which can be prepared by any of the above methods for preparing the micro-LED chip 100. Please refer to the description of the above embodiment for its specific content, which will not be repeated here.

[0092] Based on the above description, the present application embodiment further provides a micro light emitting diode chip 100. Figures 1 to 9 As shown, the micro-LED chip 100 includes an initial light-emitting structure 110, a first passivation layer 120 and a light-shielding layer 130; the initial light-emitting structure 110 includes a substrate, such as a first substrate 111, and a plurality of mesa structures 112 formed on the substrate; the first passivation layer 120 is arranged on a side of the initial light-emitting structure 110 away from the substrate, such as the first substrate 111; the light-shielding layer 130 is arranged on the surface of a partial sidewall area of ​​each mesa structure 112, and the light-shielding layer 130 and the first passivation layer 120 are staggered with the electrode area of ​​each mesa structure 112, and the light-shielding layer 130 and the first passivation layer 120 expose the electrode area of ​​each mesa structure 112.

[0093] In the micro-LED chip 100 of the embodiment of the present application, the first passivation layer 120 is arranged between the mesa structure 112 and the light shielding layer 130. The first passivation layer 120 separates the light shielding layer 130 from the mesa structure 112, which can avoid the adverse effect of the light shielding layer 130 on the mesa structure 112; at the same time, the light shielding layer 130 can also block the light emitted by the pixel points formed by the mesa structure 112, which can avoid light crosstalk between multiple pixel points; moreover, the light shielding layer 130 covers part of the side wall area of ​​each mesa structure 112 but does not cover the entire side wall area of ​​the mesa structure 112, so that there will not be two layers of light shielding layers 130 between the side wall areas of two adjacent mesa structures 112 at the same time, and the light shielding layer 130 can make a larger spacing area between the two adjacent mesa structures 112, which not only enables the light shielding layer 130 to be produced in the production process, but also avoids the electrical interconnection of the two adjacent mesa structures 112 to cause a short circuit. Therefore, the micro-LED chip 100 of the present application can reduce the sidewall light crosstalk and maintain the electrical disconnection between the mesa structures 112 to improve the reliability of the micro-LED chip 100 .

[0094] In some examples, the light shielding layer 130 is disposed on the surface of two adjacent sidewall regions of each mesa structure 112. In this case, the light shielding layer 130 does not cover the entire sidewall region of the mesa structure 112, and the micro-LED chip 100 of the present application can further prevent two adjacent mesa structures 112 from being electrically interconnected and causing a short circuit.

[0095] In some examples, the initial light-emitting architecture 110 includes a plurality of mesa arrays 114 spaced apart from each other, each mesa array 114 includes a plurality of mesa structures 112, each mesa structure 112 includes a first side wall a1, a second side wall a2, a third side wall a3, and a fourth side wall a4 connected in sequence, the third side wall a3 is disposed opposite to the first side wall a1, and the fourth side wall a4 is disposed opposite to the second side wall a2. The light shielding layer 130 includes a first light shielding layer 131 and a second light shielding layer 132, the first light shielding layer 131 is disposed on the surface of the first side wall a1 and the second side wall a2 of each mesa structure 112 of a mesa array 114, and the second light shielding layer 132 is disposed on the surface of the second side wall a2 and the third side wall a3 of each mesa structure 112 of an adjacent mesa array 114. At this time, the first light shading layer 131 and the second light shading layer 132 can cover multiple mesa structures 112 in a single-sided alternating manner, and the micro-LED chip 100 can be spaced by alternating single-sided light shading side walls, which can not only ensure the uniformity of light emission of the micro-LED chip 100, but also prevent sidewall light crosstalk, and also keep the electrical connection between different mesa structures 112 (pixels) disconnected and improve the safety of the micro-LED chip 100.

[0096] In some examples, the ratio of the projection area of ​​the light shielding layer 130 on the first side wall a1, the second side wall a2, or the third side wall a3 to the area of ​​the first side wall a1, the second side wall a2, or the third side wall a3 is greater than one-half and less than or equal to three-quarters. In this case, for a certain side wall, the light shielding layer 130 covers most of the area of ​​the side wall, the light shielding layer 130 can block more light, and the micro-LED chip 100 has better light crosstalk protection performance.

[0097] In some examples, the initial light-emitting architecture 110 includes a first mesa array 1141 and a second mesa array 1142 that are alternately arranged, and the first mesa array 1141 and the second mesa array 1142 each include a plurality of mesa structures 112; the sidewall region of each mesa structure 112 includes a first region a5 and a second region a6 that are spaced apart from each other or partially overlapped, and the angle between the two edges of the first region a5 and the second region a6 and the center point of the mesa structure 112 is greater than 0 degrees and less than 180 degrees. The first light shielding layer 131 is disposed on the surface of the first region a5 of each mesa structure 112 in the first mesa array 1141, and the second light shielding layer 132 is disposed on the surface of the second region a6 of each mesa structure 112 in the second mesa array 1142. At this time, the micro-LED chip 100 can be spaced by alternating single-sided shading side walls, which can not only ensure the uniformity of light emission of the micro-LED chip 100, but also prevent side wall light crosstalk, and also keep the electrical connection between different mesa structures 112 disconnected and improve the safety of the micro-LED chip 100.

[0098] In some examples, the micro-LED chip 100 further includes a second passivation layer 140, and the initial light-emitting structure 110 including the light-shielding layer 130 and the first passivation layer 120 forms a light-shielding table, and the second passivation layer 140 is disposed on the surface of the light-shielding table. The second passivation layer 140 is disposed on the surface of the initial light-emitting structure 110 formed with the light-shielding layer 130 that is away from the first passivation layer 120. The second passivation layer 140 covers the surface of the light-shielding layer 130 and a portion of the first passivation layer 120. At this time, the second passivation layer 140 can protect the light-shielding layer 130 and prevent the adverse effects of substances such as air on the light-shielding layer 130.

[0099] In some examples, the light shielding layer 130 is a metal layer, an aluminum oxide layer or a silicon nitride layer. In this case, the light shielding layer 130 is not likely to cause the brightness of the micro LED chip 100 to decrease due to light absorption, and the micro LED chip 100 of the present application has a better light emitting effect.

[0100] In some examples, each mesa structure 112 is a prism structure. In this case, the first passivation layer 120, the light shielding layer 130, and the second passivation layer 140 can be more closely attached to the mesa structure 112 of the prism structure, which can improve the step coverage of each layer, thereby enhancing the reliability of the micro-LED chip 100 and increasing the light emitting effect of the micro-LED chip 100.

[0101] For some examples, see Fig.10 , Fig.10 The fourth structural schematic diagram of the micro-LED chip 100 provided in the embodiment of the present application. The micro-LED chip 100 further includes a plurality of solder joint structures 150, which are arranged on the side of the first electrode layer 1124 away from the first substrate 111, and on the side of the second electrode layer 1125 away from the first substrate 111. The solder joint structure 150 can be made of, but not limited to, metals such as indium (In), aluminum (Al), tin (Sn), silver (Ag), gold (Au), gold-tin alloy, and nickel-gold alloy, and the solder joint structure 150 is used for bonding with the driver chip 200.

[0102] Based on the above description, please refer to Fig.11 , Fig.11 The present invention is a flowchart of a method for manufacturing a micro-light emitting diode device 10 provided in an embodiment of the present invention. The present invention also provides a method for manufacturing a micro-light emitting diode device 10, the method comprising:

[0103] In S21, a driving chip 200 and a micro-LED chip 100 according to any of the above embodiments are provided;

[0104] like Fig.10 As shown, the micro-LED chip 100 of the present application includes a first substrate 111, a mesa structure 112, a first passivation layer 120, a light shielding layer 130, a second passivation layer 140 and a solder joint structure 150. The first substrate 111 is used to carry the mesa structure 112, and the mesa structure 112 is used to emit light under the drive of the driver chip 200. The solder joint structure 150 is used to bond with the driver chip 200. It should be noted that Fig.10 It is only used to illustrate the structure of the micro-LED chip 100 without limiting its specific structure. For example, the micro-LED chip 100 may also include a micro-lens structure for improving optical performance, a quantum dot color film structure for realizing color functions, and other structures.

[0105] like Fig.12 As shown, Fig.12A schematic diagram of the structure of a driver chip 200 provided in an embodiment of the present application. The driver chip 200 includes a second substrate 210, a driver circuit 220 formed on the second substrate 210, and one or more driver pads 230. The driver circuit 220 may be, but is not limited to, a CMOS circuit structure or a TFT circuit structure. The driver pad 230 may be, but is not limited to, made of metals such as In, Al, Sn, Ag, Au, gold-tin alloy, and nickel-gold alloy. One or more driver pads 230 are used to be arranged in a one-to-one correspondence with one or more solder joint structures 150 of the micro light-emitting diode chip 100 and bonded in a one-to-one correspondence. It should be noted that Fig.12 It is only used to illustrate the structure of the driving chip 200 without limiting its specific structure. For example, the driving chip 200 may further include an electrical connection portion 240 electrically connected to the circuit board.

[0106] In S22 , the micro light emitting diode chip 100 and the driving chip 200 are bonded to obtain a bonding structure 300 .

[0107] In this step, the micro-LED chip 100 and the driver chip 200 are placed in a high-precision flip-chip bonding machine, and the micro-LED chip 100 and the driver chip 200 are flip-chip mounted, and the solder joint structure 150 of the micro-LED chip 100 corresponds to the driving pad 230 of the driver chip 200. The high-precision flip-chip bonding machine automatically picks up the micro-LED chip 100 and the driver chip 200 and accurately aligns the two and realizes the bonding operation. At this time, Fig.13 As shown, Fig.13 This is a schematic diagram of the first structure of the micro-LED device 10 provided in an embodiment of the present application. The micro-LED chip 100 and the driver chip 200 are bonded to each other through a solder joint structure 150 and a driver pad 230 to obtain a bonding structure 300.

[0108] It is understandable that in this step, the micro-LED chip 100 and the driver chip 200 can be bonded once or multiple times. For example, in this step, the micro-LED chip 100 and the driver chip 200 can be pre-bonded to form a pre-bonded structure 300; then, the bonding area of ​​the pre-bonded structure 300 is filled with insulating glue; then, the pre-bonded structure 300 is bonded for the second time and the insulating glue is cured.

[0109] In S23, the bonding area of ​​the bonding structure 300 is filled with insulating glue;

[0110] In this step, the bonding structure 300 after the bonding operation is completed is transferred to the tray of the glue dispenser, and the bonding structure 300 is aligned with the positioning groove in the tray, so that the mark point on the bonding structure 300 is aligned with the mark point of the glue dispenser, and the glue dispenser performs the bottom filling operation of the bonding area of ​​the bonding structure 300 with insulating glue, and then the bonding structure 300 is left to stand until the insulating glue flows evenly in the bonding area. Among them, by adjusting the amount of glue in the glue dispenser, the amount of glue filled into the bonding area can be adjusted.

[0111] In S24 , the bonding structure 300 filled with insulating glue is cut into pieces to obtain micro light emitting diode devices 10 .

[0112] In this step, the bonding structure 300 can be cut by a cutting process such as laser cutting, diamond knife cutting or wheel cutting to obtain a micro light emitting diode device 10 including at least one mesa structure 112 .

[0113] In the method for manufacturing the micro-LED device 10 provided in the embodiment of the present application, the driving chip 200 and the micro-LED chip 100 are formed into the micro-LED device 10 through a bonding process, an underfill glue process, a slitting process, etc. The micro-LED chips 100 of the micro-LED device 10 are spaced apart by alternating single-sided light-shielding side walls, so that the micro-LED device 10 can emit light uniformly, prevent sidewall light crosstalk, and improve its electrical safety.

[0114] In some examples, after the step of filling the bonding area of ​​the bonding structure 300 with insulating glue, the step further includes: removing the substrate of the micro-LED chip 100 in the bonding structure 300; and setting an optical structure 400 on the surface of the micro-LED chip 100 of the bonding structure 300 away from the driver chip 200, wherein the optical structure 400 includes at least one of a microlens structure (not shown in the drawings) and a quantum dot color film structure 510. In this step, the substrate of the micro-LED chip 100 in the bonding structure 300, such as the first substrate 111, can be removed by a cutting process such as laser cutting, diamond knife cutting or wheel cutting. At this time, as shown in FIG. Fig.14 As shown, Fig.14 A schematic structural diagram of a micro-light emitting diode device 10 provided in an embodiment of the present application. The micro-light emitting diode device 10 does not include a first substrate 111 .

[0115] In some examples, the present application can attach the microlens structure to the surface of the micro-LED chip 100 away from the driver chip 200, and make the multiple microlens units of the microlens structure correspond to the multiple mesa structures 112 of the micro-LED chip 100. The microlens structure of the present application can refract the light and gather the light generated by the micro-LED chip 100. The microlens structure has a good focusing effect, which can improve the utilization rate of light, thereby improving the display quality and luminous brightness of the micro-LED device 10.

[0116] In some examples, the present application can also attach the quantum dot color film structure 510 to the surface of the micro-LED chip 100 away from the driver chip 200, so that the multiple quantum dot color films 512 of the quantum dot color film structure 510 are attached to the multiple mesa structures 112 of the micro-LED chip 100 in a one-to-one correspondence, for example, Fig.15 As shown, Fig.15 This is another structural schematic diagram of the micro-LED device 10 provided in an embodiment of the present application. The quantum dot color film structure 510 is disposed on the surface of the micro-LED chip 100 away from the driver chip 200 .

[0117] It is understandable that quantum dots are semiconductor nanocrystalline materials with a diameter in the range of 2-10 nanometers (nm); quantum dot materials have the advantages of concentrated luminescence spectrum, high color purity, and the luminescence color can be easily adjusted by the size, structure or composition of the quantum dot material. Among them, quantum dot ink is processed by solution, spin coated or inkjet printed, and further solidified into a film to form a quantum dot structure. It is a new generation of luminescent materials used in solid-state lighting and full-color flat panel displays. The quantum dot color film structure 510 of the present application includes a black matrix structure 511 and a quantum dot color film 512 that are alternately arranged. The quantum dot color film structure 510 is manufactured on a substrate such as a glass sheet by a quantum dot process. Among them, the quantum dot color film 512 can be, but is not limited to, a quantum dot color filter (Quantum dot Color Converter, referred to as QDCF) structure or a quantum dot film (Quantum dot Enhancement Film, referred to as QDEF) structure, etc. Among them, such as Fig.15 As shown, the quantum dot color film 512a can be filled with red quantum dots, the quantum dot color film 512b can be filled with green quantum dots, and the quantum dot color film 512c is not filled with quantum dots, so that the structure is a light exit hole.

[0118] The micro-LED device 10 of the present application realizes full-color display under the action of the quantum dot color film structure 510, and the present application can prepare a micro-LED device 10 with anti-crosstalk and purer color. In addition, a black matrix structure 511 is provided on the peripheral side of the quantum dot color film 512 of the present application, which can prevent the quantum dot color film 512 from leaking light, and can further improve the anti-crosstalk performance of the micro-LED device 10.

[0119] In some examples, such as Fig.15 As shown, the optical structure 400 further includes a filter layer 520 and a glass layer 530 disposed on a side of the quantum dot color film structure 510 away from the second substrate 210. In some examples, when the optical structure 400 can include both the microlens structure and the quantum dot color film structure 510, the quantum dot color film structure 510 can be attached to a side of the microlens structure away from the driver chip 200.

[0120] Based on the above description, the embodiment of the present application further provides a micro light emitting diode device 10 , which is manufactured by any of the above-mentioned manufacturing methods of the micro light emitting diode device 10 .

[0121] Based on the above description, an embodiment of the present application also provides a micro-LED device 10, which includes a micro-LED chip 100 and a driving chip 200, wherein the driving chip 200 is bonded to the micro-LED chip 100, and the micro-LED chip 100 includes a micro-LED chip 100 prepared by the manufacturing method of the micro-LED chip 100 in any of the aforementioned embodiments; or, includes the micro-LED chip 100 in any of the aforementioned embodiments.

[0122] Based on the above description, the present application embodiment further provides a display device 20, please refer to Fig.16 , Fig.16A structural schematic diagram of a display device 20 provided in an embodiment of the present application. The display device 20 can be applied to electronic devices to realize extended reality (Extended Reality, XR) technologies such as augmented reality (AR), virtual reality (VR), and mixed reality (MR). In implementation, the display device 20 can be the projection part of an electronic device, such as a projector, a head-up display (HUD), etc.; for another example, the display device 20 can also be the display part of an electronic device, for example, the electronic device can include: any device with a display screen, such as a smart phone, a smart watch, a laptop computer, a tablet computer, a driving recorder, a navigator, a head-mounted device, etc.; for another example, the display device 20 can also be the lighting part of an electronic device, for example, the electronic device can include: any device with a lighting component, such as a vehicle, a street lamp, etc.

[0123] It is understandable that the display device 20 of the embodiment of the present application includes a micro-LED device 10, and the micro-LED device 10 includes the micro-LED device 10 of any of the above embodiments, or the micro-LED device 10 can be prepared by the manufacturing method of the micro-LED device 10 of any of the above embodiments. Therefore, the micro-LED device 10 of the display device 20 of the present application can not only ensure the uniformity of light emission, but also prevent the side wall light crosstalk, and also realize the process production. The present application proposes a color micro-LED device 10 and a display device 20 that prevents light crosstalk.

[0124] It should be noted that the manufacturing method of the micro-LED chip 100, the micro-LED chip 100, the manufacturing method of the micro-LED device 10, the micro-LED device 10, and the display device 20 in the embodiments of the present application are different subjects under the same inventive concept. Features not described in detail in each embodiment can be found in the description of other embodiments.

[0125] It should be noted that the "multiple" mentioned in this application generally refers to two or more. Moreover, the directional terms mentioned in the embodiments of the present application, such as "up", "down", "front", "back", "left", "right", "inside", "outside", "side", etc., are only with reference to the directions of the attached drawings. Therefore, the directional terms used are used to illustrate and understand the embodiments of the present application, rather than to limit the embodiments of the present application. In the various drawings, units with similar structures are represented by the same figure numbers. For clarity, the various parts in the drawings are not drawn to scale. In addition, certain related parts may not be shown in the drawings.

[0126] It should be understood that, in the description of this application, terms such as "first", "second", etc. are only used to distinguish similar objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features.

[0127] It is understandable that those skilled in the art can combine various implementations in the above embodiments under the guidance of the above embodiments to obtain technical solutions of multiple implementations. The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modification, equivalent replacement and improvement made within the spirit and principle of the present application shall be included in the protection scope of the present application.

[0128] The micro-LED chip and manufacturing method, and the micro-LED device provided by the present application are introduced in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the present application. At the same time, for those skilled in the art, according to the idea of ​​the present application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as limiting the present application.

Claims

1. A method for manufacturing a micro light emitting diode chip, characterized in that: include: providing an initial light emitting architecture including a plurality of mesa structures; forming a first passivation layer on the surface of the initial light-emitting structure; forming a light shielding layer on the surface of a portion of the sidewall area of ​​each of the mesa structures; The electrode region of each mesa structure is exposed, and the micro light emitting diode chip is obtained.

2. The method for manufacturing a micro light emitting diode chip according to claim 1, characterized in that: The step of forming a light shielding layer on a surface of a portion of the sidewall region of each mesa structure comprises: A light shielding layer is formed on the surfaces of two adjacent sidewall regions of each mesa structure.

3. The method for manufacturing a micro light emitting diode chip according to claim 1, characterized in that: The initial light-emitting structure includes a plurality of mesa arrays spaced from each other, each of the mesa arrays includes a plurality of mesa structures, each of the mesa structures includes a first side wall, a second side wall, a third side wall and a fourth side wall connected in sequence, the first side wall is arranged opposite to the third side wall, and the second side wall is arranged opposite to the fourth side wall; wherein, The step of forming a light shielding layer on a surface of a portion of the sidewall region of each mesa structure comprises: A first shading layer is formed on the surface of the first side wall and the second side wall of each of the mesa structures in one of two adjacent mesa arrays, and a second shading layer is formed on the surface of the second side wall and the third side wall of each of the mesa structures in the adjacent mesa arrays.

4. The method for manufacturing a micro light emitting diode chip according to claim 1, characterized in that: The initial light-emitting structure includes a first mesa array and a second mesa array arranged alternately, and the first mesa array and the second mesa array each include a plurality of mesa structures; the sidewall area of ​​each mesa structure includes a first area and a second area that are spaced apart from each other or partially overlapped, and the angle between the two edges of the first area and the second area and the center point of the mesa structure is greater than 0 degrees and less than 180 degrees; wherein, The step of forming a light shielding layer on a surface of a portion of the sidewall region of each mesa structure comprises: A first light shielding layer is formed in the first region of each mesa structure in the first mesa array, and a second light shielding layer is formed in the second region of each mesa structure in the second mesa array.

5. The method for manufacturing a micro light emitting diode chip according to any one of claims 1 to 4, characterized in that: The step of forming a light shielding layer on a surface of a portion of the sidewall region of each mesa structure comprises: forming a light shielding layer on a partial sidewall region of each of the mesa structures, and forming a light shielding mesa including the light shielding layer and the first passivation layer; A second passivation layer is formed on the surface of the light shielding mesa.

6. A micro light emitting diode chip, characterized in that: include: An initial light emitting structure includes a substrate and a plurality of mesa structures formed on the substrate; A first passivation layer is disposed on a side of the initial light-emitting structure facing away from the substrate; The light shielding layer is disposed on the surface of a part of the sidewall region of each of the mesa structures, and the light shielding layer and the first passivation layer expose the electrode region of each of the mesa structures.

7. The micro light emitting diode chip according to claim 6, characterized in that: The light shielding layer is disposed on the surfaces of two adjacent side wall regions of each of the mesa structures.

8. The micro light emitting diode chip according to claim 6, characterized in that: The initial light-emitting structure includes a plurality of mesa arrays spaced from each other, each of the mesa arrays includes a plurality of mesa structures, each of the mesa structures includes a first side wall, a second side wall, a third side wall and a fourth side wall connected in sequence, the first side wall is arranged opposite to the third side wall, and the second side wall is arranged opposite to the fourth side wall; the light shielding layer includes a first light shielding layer and a second light shielding layer; The first light-shielding layer is disposed on the surfaces of the first side wall and the second side wall of each mesa structure of one of two adjacent mesa arrays, and the second light-shielding layer is disposed on the surfaces opposite to the second side wall and the third side wall of each mesa structure of the adjacent mesa arrays.

9. The micro light emitting diode chip according to claim 6, characterized in that: The initial light-emitting structure includes a first mesa array and a second mesa array arranged alternately, and the first mesa array and the second mesa array each include a plurality of mesa structures; the sidewall area of ​​each mesa structure includes a first area and a second area that are spaced apart from each other or partially overlapped, and the angle between the two edges of the first area and the second area and the center point of the mesa structure is greater than 0 degrees and less than 180 degrees; the shading layer includes a first shading layer and a second shading layer; wherein, The first light shielding layer is disposed in the first region of each of the mesa structures in the first mesa array, and the second light shielding layer is disposed in the second region of each of the mesa structures in the second mesa array.

10. The micro light emitting diode chip according to any one of claims 6 to 9, characterized in that: The initial light-emitting structure including the light-shielding layer and the first passivation layer forms a light-shielding table; The micro light emitting diode chip further comprises: The second passivation layer is arranged on the surface of the light shielding table.

11. A micro light emitting diode device, characterized in that: include: A micro light emitting diode chip manufactured by the method for manufacturing a micro light emitting diode chip according to any one of claims 1 to 5; Or, a micro light emitting diode chip as claimed in any one of claims 6 to 10; A driving chip is bonded to the micro light emitting diode chip.

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