Preparation method of electronic device and electronic device
By combining ozone cleaning, acid cleaning, and low-temperature deionized water cleaning, the problem of over-etching caused by residual etching solution was solved, thereby improving the reliability and adhesion performance of electronic devices.
Patent Information
- Application Number
- CN202411417953.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-11
- Publication Date
- 2025-01-10
AI Technical Summary
In existing wet etching processes, residual etchant in the structural layer can easily lead to over-etching of the structural layer, affecting the reliability of electronic devices.
A combination of ozone cleaning, acid cleaning, and low-temperature deionized water cleaning is used to remove organic matter from the surface of the transition substrate and inside the second via, thereby reducing the hydrofluoric acid corrosion rate and preventing the etching of other structural layers.
It improves the reliability of electronic devices, avoids the accumulation of organic matter and photoresist residues on the wafer surface, and enhances the adhesion performance and reliability of devices.
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Figure CN119284831A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of microelectronics technology, and in particular to a method for preparing an electronic device and an electronic device. Background Art
[0002] At present, the manufacturing of micro-electromechanical chips and integrated circuit sensors involves the deposition of multiple metal layers and their graphic processes. Various manufacturing processes include film deposition, photolithography and etching processes. After these processes are completed, wet processes are required to clean surface residues. With the changes in process design and restrictions on other structural layers, higher requirements are put forward for wet cleaning, which must achieve satisfactory cleaning effects without damaging other structural layers. However, in the existing wet etching, part of the corrosive liquid remains in the structural layer, which easily leads to over-etching of the structural layer, affecting the reliability of the device. Summary of the invention
[0003] The embodiments of the present application provide a method for preparing an electronic device and an electronic device, which can improve the over-etching phenomenon caused by the residual etching solution during the preparation process of the electronic device, so as to improve the reliability of the electronic device.
[0004] According to a first aspect of an embodiment of the present application, there is provided a method for preparing an electronic device, comprising:
[0005] A first dielectric layer and a second dielectric layer are sequentially arranged on one side of the silicon wafer;
[0006] Disposing a photoresist on a side of the second dielectric layer away from the silicon wafer, and patterning the photoresist using a photolithography process to form a first via hole on the photoresist;
[0007] Etching the second dielectric layer through the first via hole to form a second via hole in the second dielectric layer, wherein the first via hole is connected to the second via hole;
[0008] removing the photoresist to obtain a transition substrate;
[0009] Performing ozone cleaning on the transition substrate at least once to remove organic matter on the surface of the transition substrate and in the second via hole; and / or,
[0010] Performing acid cleaning on the transition substrate at least once to remove organic matter on the surface of the transition substrate and in the second via hole;
[0011] The transition substrate is cleaned with deionized water at least once.
[0012] In some embodiments, the flow rate of the deionized water is greater than or equal to the flow rate of the acid cleaning; and / or,
[0013] The cleaning solution for acid cleaning includes hydrofluoric acid, and the volume ratio of the deionized water and the hydrofluoric acid after mixing is 1:1000.
[0014] In some embodiments, before or after cleaning the transition substrate, the method further comprises:
[0015] Fixing the transition substrate on an electrostatic chuck;
[0016] The electrostatic chuck is controlled to drive the transition substrate to rotate.
[0017] In some embodiments, the rotation speed of the transition substrate is 300 to 500 r / min.
[0018] In some embodiments, the flow rate of the deacidification cleaning is 10 to 20 ml / min; and / or,
[0019] The flow rate of the deionized water cleaning is 20 to 30 ml / min; and / or,
[0020] The water temperature of the deionized water is less than 30° C.; and / or,
[0021] The ozone flow rate is 5 to 9 ml / min.
[0022] In some embodiments, an orthographic projection of the first via hole on the silicon wafer overlaps with an orthographic projection of the second via hole on the silicon wafer.
[0023] In some embodiments, the first dielectric layer includes silicon dioxide, and / or the second dielectric layer includes polysilicon;
[0024] The first dielectric layer includes a groove, and a notch of the groove is communicated with the second via hole.
[0025] In some embodiments, the angle between the sidewall of the second via hole and the plane where the first dielectric layer is located is in a range of 89 to 90°; and / or,
[0026] The orthographic projection of the second via hole on the silicon wafer overlaps with the groove on the silicon wafer.
[0027] In some embodiments, the method for preparing an electronic device further comprises:
[0028] Spraying isopropyl alcohol on the cleaned surface of the transition substrate facing away from the silicon wafer;
[0029] The transition substrate is subjected to thermal nitrogen evaporation.
[0030] According to a second aspect of the embodiments of the present application, an electronic device is provided, which is prepared according to the method for preparing an electronic device according to the first aspect of the claim.
[0031] The method for preparing an electronic device provided in the embodiment of the present application performs at least one ozone cleaning and / or at least one acid cleaning on the transition substrate to remove organic matter on the surface of the transition substrate and in the second via hole, and then performs at least one deionized water cleaning on the transition substrate with low-temperature deionized water, which can reduce the hydrofluoric acid corrosion rate and avoid etching other structural layers. It can also achieve the cleaning effect of removing dirt from the wafer surface, avoiding organic matter or photoresist residues from remaining on the wafer surface, thereby improving the reliability of the device. BRIEF DESCRIPTION OF THE DRAWINGS
[0032] Figure 1 A schematic flowchart of a method for preparing an electronic device provided in an embodiment of the present application;
[0033] Figure 2 A schematic process flow chart of a method for preparing an electronic device provided in an embodiment of the present application;
[0034] Figure 3 A schematic diagram of a hydrofluoric acid corrosion rate provided in an embodiment of the present application;
[0035] Figure 4 A schematic structural diagram of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION
[0036] In order to better understand the technical solutions provided by the embodiments of this specification, the technical solutions of the embodiments of this specification are described in detail below through the accompanying drawings and specific embodiments. It should be understood that the embodiments of this specification and the specific features in the embodiments are detailed descriptions of the technical solutions of the embodiments of this specification, rather than limitations on the technical solutions of this specification. In the absence of conflict, the embodiments of this specification and the technical features in the embodiments can be combined with each other.
[0037] In this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or equipment including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or equipment. In the absence of more restrictions, the elements limited by the statement "comprise one..." do not exclude the existence of other identical elements in the process, method, article or equipment including the elements. The term "more than two" includes two or more than two situations.
[0038] At present, the manufacturing of micro-electromechanical chips and integrated circuit sensors involves the deposition of multiple metal layers and their graphic processes. Various manufacturing processes include film deposition, photolithography and etching processes. After these processes are completed, wet processes are required to clean surface residues. With the changes in process design and restrictions on other structural layers, higher requirements are put forward for wet cleaning, which must achieve satisfactory cleaning effects without damaging other structural layers. However, in the existing wet etching, part of the corrosive liquid remains in the structural layer, which easily leads to over-etching of the structural layer, affecting the reliability of the device.
[0039] In view of this, the embodiments of the present application provide a method for preparing an electronic device and an electronic device, which can improve the reliability of the electronic device.
[0040] According to a first aspect of an embodiment of the present application, a method for preparing an electronic device is provided. Figure 1 The present invention provides a schematic flow chart of a method for preparing an electronic device according to an embodiment of the present invention. Figure 1 As shown, the method for preparing the electronic device comprises:
[0041] S101: a first dielectric layer and a second dielectric layer are sequentially disposed on one side of a silicon wafer.
[0042] Figure 2 The following is a schematic process flow chart of a method for preparing an electronic device provided in an embodiment of the present application. Figure 2 As shown, step S101: a first dielectric layer 200 and a second dielectric layer 300 are sequentially disposed on one side of a silicon wafer 100. The first dielectric layer 200 may include silicon dioxide, and the second dielectric layer 300 may include polysilicon.
[0043] S102: Disposing a photoresist on a side of the second dielectric layer away from the silicon wafer, and patterning the photoresist using a photolithography process to form a first via hole on the photoresist.
[0044] For example, Figure 2 As shown, step S102 : a photoresist 400 is disposed on one side of the second dielectric layer 300 , and the photoresist 400 is exposed and developed to perform patterning on the photoresist 400 , and a first via hole 410 is formed on the photoresist 400 .
[0045] S103: etching the second dielectric layer through the first via hole to form a second via hole in the second dielectric layer, wherein the first via hole is connected to the second via hole.
[0046] Exemplarily, the second dielectric layer 300 is dry-etched through the first via hole 410 to form the second via hole 320 in the second dielectric layer 300 , and the first via hole 410 and the second via hole 310 are connected.
[0047] S104: removing the photoresist to obtain a transition substrate.
[0048] For example, Figure 2 As shown, step S104: using a wet etching process to remove the photoresist 400 to obtain a transition substrate 500.
[0049] S105: performing ozone cleaning on the transition substrate at least once to remove organic matter on the surface of the transition substrate and in the second via hole;
[0050] The transition substrate is acid cleaned at least once to remove organic matter on the surface of the transition substrate and in the second via hole.
[0051] Exemplarily, the transition substrate 500 is subjected to at least one ozone cleaning, and the strong oxidizing property of ozone is used to remove organic matter on the surface of the transition substrate 500 and in the second via hole 310. The transition substrate 500 can also be subjected to at least one acid cleaning, and the transition substrate 500 is corroded by hydrofluoric acid to remove organic matter on the surface of the transition substrate 500 and in the second via hole 310. The cleaning sequence of acid cleaning and ozone cleaning can be adjusted. It can be ozone cleaning first and then acid cleaning, or it can be acid cleaning first and then ozone cleaning. Organic matter includes photoresist residues, silicon dioxide residues, polysilicon residues, etc. By performing at least one ozone cleaning and at least one hydrofluoric acid cleaning on the transition substrate, the transition substrate is subjected to a wet process to remove the photoresist on the silicon wafer, and then a wet acid cleaning is performed again, so as to avoid residues in the transition substrate and the second via hole, which affects the degradation of the adhesion performance between layers of the device in the subsequent manufacturing process.
[0052] Exemplarily, the cleaning process of the transition substrate is optional, and according to actual process requirements, the transition substrate 500 can be cleaned with ozone once to remove organic matter on the surface of the transition substrate 500 and in the second via hole 310. Alternatively, the transition substrate 500 can be cleaned with acid once to remove organic matter on the surface of the transition substrate 500 and in the second via hole 310. By performing at least one ozone cleaning and at least one hydrofluoric acid cleaning on the transition substrate, it is possible to avoid residues on the transition substrate and in the transition substrate via hole, which may affect the degradation of the adhesion performance between layers of the device in the subsequent manufacturing process.
[0053] S106: Clean the transition substrate with deionized water at least once
[0054] Exemplarily, the transition substrate 500 is cleaned with deionized water at least once. The deionized water cleaning can use low-temperature deionized water to clean the transition substrate. The temperature of the deionized water is less than 30°C. Low-temperature deionized water can reduce the concentration of hydrofluoric acid, reduce the corrosion rate of hydrofluoric acid, and can also rinse off the organic matter or photoresist residues on the surface of the transition substrate 500 and in the second via 310. By cleaning the transition substrate 500 with low-temperature deionized water, the hydrofluoric acid corrosion rate can be reduced and etching of other structural layers can be avoided. It can also achieve the cleaning effect of removing dirt from the wafer surface, avoid organic matter or photoresist residues from remaining on the wafer surface, and improve the reliability of the device.
[0055] Typically, in existing wet cleaning, deionized water is used for high-temperature cleaning, so that a portion of hydrofluoric acid will remain in relatively low-lying areas of the structural layer, causing the hydrofluoric acid in this area to continuously corrode the structural layer, resulting in over-etching of the structural layer.
[0056] The method for preparing an electronic device provided in the embodiment of the present application performs at least one ozone cleaning and / or at least one acid cleaning on the transition substrate to remove organic matter on the surface of the transition substrate and in the second via hole, and then performs at least one deionized water cleaning on the transition substrate with low-temperature deionized water, which can reduce the hydrofluoric acid corrosion rate and avoid etching other structural layers. It can also achieve the cleaning effect of removing dirt from the wafer surface, avoiding organic matter or photoresist residues from remaining on the wafer surface, thereby improving the reliability of the device.
[0057] In some embodiments, the flow rate of deionized water is greater than the flow rate of hydrofluoric acid, and the volume ratio of deionized water to hydrofluoric acid after mixing is 1:1000. The transition substrate is cleaned with a large amount of deionized water to quickly reduce the hydrofluoric acid residue on the surface of the transition substrate and in the second via hole, so as to avoid the hydrofluoric acid from etching the first dielectric layer and destroying the film structure of the first dielectric layer during the process of cleaning the surface of the transition substrate and the second via hole. By using a large flow of deionized water to clean the transition substrate, the over-etching phenomenon of the transition substrate can be avoided, thereby improving the reliability of the device.
[0058] Exemplarily, the flow rate of acid cleaning is 10 to 20 ml / min, and the flow rate of deionized water cleaning is 20 to 30 ml / min. When the flow rate of acid cleaning is 10 ml / min, the flow rate of deionized water cleaning is 20 ml / min. When the flow rate of acid cleaning is 15 ml / min, the flow rate of deionized water cleaning is 25 ml / min. When the flow rate of acid cleaning is 20 ml / min, the flow rate of deionized water cleaning is 30 ml / min. Setting the flow rate of deionized water to be greater than the flow rate of hydrofluoric acid and using a large flow rate of deionized water to clean the transition substrate can avoid over-engraving of the transition substrate and improve the reliability of the device.
[0059] In some embodiments, before or after cleaning the transition substrate, the method further comprises:
[0060] The transition substrate is fixed on the electrostatic chuck, and the electrostatic chuck is controlled to drive the transition substrate to rotate.
[0061] Exemplarily, the transition substrate cleaning may include ozone cleaning, acid cleaning and deionized water cleaning. The transition substrate is fixed on an electrostatic chuck, and the electrostatic chuck is controlled to drive the transition substrate to rotate. The rotation speed of the transition substrate is 300 to 500r / min. The rotation of the electrostatic chuck can accelerate the ozone cleaning of the transition substrate surface and the organic matter or photoresist residue in the second via hole, thereby improving the cleaning efficiency. The centrifugal force of the electrostatic chuck is used to throw the hydrofluoric acid used in the acid cleaning process from the transition substrate surface and the second via hole to reduce the time that the hydrofluoric acid stays on the transition substrate and avoid transition etching. The centrifugal force of the electrostatic chuck is used to throw the deionized water in the deionized water cleaning process from the transition substrate surface and the second via hole to allow the transition substrate to air dry quickly. The electrostatic chuck can adsorb the charge generated on the transition substrate surface from the transition substrate surface and the second via hole to avoid device breakdown during use. By fixing the transition substrate on an electrostatic chuck for cleaning, over-etching of the transition substrate can be avoided, and residual charge on the transition substrate can be avoided to cause breakdown during the process. At the same time, the drying of the transition substrate can be accelerated, thereby improving the cleaning efficiency of the transition substrate.
[0062] Exemplarily, the ozone flow rate is 5 to 9 ml / min. When the ozone flow rate is 5 ml / min, the rotation speed of the transition substrate is 500 r / min. When the ozone flow rate is 7 ml / min, the rotation speed of the transition substrate is 400 r / min. When the ozone flow rate is 9 ml / min, the rotation speed of the transition substrate is 300 r / min. The smaller the ozone flow rate is set, the faster the rotation speed of the transition substrate. The larger the ozone flow rate is, the slower the rotation speed of the transition substrate is. According to different ozone flow rate settings, the rotation speed of the transition substrate is matched to improve the cleaning efficiency of ozone cleaning.
[0063] Exemplarily, the flow rate of the acid cleaning is 10 to 30 ml / min. When the flow rate of the acid cleaning is 10 ml / min, the rotation speed of the transition substrate is 300 r / min. When the flow rate of the acid cleaning is 20 ml / min, the rotation speed of the transition substrate is 400 r / min. When the flow rate of the acid cleaning is 30 ml / min, the rotation speed of the transition substrate is 500 r / min. The lower the concentration of the acid cleaning is set, the slower the rotation speed of the transition substrate. The higher the concentration of the acid cleaning, the faster the rotation speed of the transition substrate, so as to control the length of time the acid stays on the transition substrate to avoid excessive etching.
[0064] Exemplarily, the flow rate of deionized water cleaning is 20 to 30 ml / min. When the flow rate of deionized water cleaning is 20 ml / min, the rotation speed of the transition substrate is 500 r / min. When the flow rate of deionized water cleaning is 50 ml / min, the rotation speed of the transition substrate is 400 r / min. When the flow rate of deionized water cleaning is 30 ml / min, the rotation speed of the transition substrate is 500 r / min. The smaller the flow rate of deionized water is set, the greater the rotation speed of the transition substrate. The greater the flow rate of deionized water, the smaller the rotation speed of the transition substrate, so that the deionized water can fully rinse the surface of the transition substrate and the second via, and then cooperate with the rotation of the electrostatic chuck to quickly air-dry the transition substrate.
[0065] In some embodiments, the orthographic projection of the first via hole 410 on the silicon wafer 100 overlaps with the orthographic projection of the second via hole 310 on the silicon wafer 100 .
[0066] Exemplarily, the second via hole 310 is etched through the first via hole 410, and the etching rates of the first via hole 410 and the second via hole 310 are set to be the same, and the depth of the first via hole 410 is the same as the depth of the second via hole 310, so that the orthographic projection of the first via hole 410 on the silicon wafer 100 overlaps with the orthographic projection of the second via hole 310 on the silicon wafer 100. By setting the etching rate of the first via hole to be the same as the etching rate of the second via hole, the consistency of the via processing of the device can be improved and the difficulty of the process processing can be reduced.
[0067] In some embodiments, Figure 4 As shown, the first dielectric layer 200 includes a groove 210, which is connected to the second via 310. In the acid cleaning process, the flow rate of the acid cleaning is set to 10 to 30 ml / min, so that the etching of the groove 210 of the first dielectric layer does not damage the structure and adhesion of the device, and the impact on the device can be ignored.
[0068] For example, Figure 3 A schematic diagram of a hydrofluoric acid corrosion rate provided in an embodiment of the present application. Figure 3 As shown, the ordinate represents the etching rate of hydrofluoric acid. S1 means that when the deionized water is greater than 30°C and the hydrofluoric acid concentration flow rate is greater than 30ml / min, the etching rate of groove 210 is 4.5um / min. S2 means that when the deionized water is less than 30°C and the hydrofluoric acid concentration flow rate is 10 to 30ml / min, the etching rate of groove 210 is 1.54.5um / min. By using low-temperature deionized water and low-concentration hydrofluoric acid to clean the transition substrate. The corrosion rate can be reduced and a stable corrosion rate can be maintained, thereby avoiding the occurrence of etching of other structural layers, so that the device processing technology has the advantages of low cost, simple process, easy operation and high output.
[0069] In some embodiments, the angle between the sidewall of the second via hole and the plane where the first dielectric layer is located ranges from 89° to 90°.
[0070] Exemplarily, when the temperature of deionized water is less than 30°C and the flow rate of hydrofluoric acid concentration is 10 ml / min, the angle between the sidewall of the second via 310 and the plane where the first dielectric layer 200 is located is 89°. When the temperature of deionized water is less than 30°C and the flow rate of hydrofluoric acid concentration is 30 ml / min, the angle between the sidewall of the second via 310 and the plane where the first dielectric layer 200 is located is 90°. By controlling the temperature of deionized water and the concentration of the acid, the angle between the sidewall of the second via 310 and the plane where the first dielectric layer 200 is located can be made perpendicular to the dielectric, thereby avoiding over-etching and improving the yield of electronic devices.
[0071] In some embodiments, the method for preparing an electronic device further comprises:
[0072] Spray isopropyl alcohol on the surface of the cleaned transition substrate facing away from the silicon wafer.
[0073] Exemplarily, isopropyl alcohol is sprayed on the surface of the transition substrate away from the silicon wafer after deionized cleaning, and the isopropyl alcohol is used to chemically react with the water in the cavity and the etching solution diluted by water, respectively, to separate the residual water in the second via hole of the transition substrate and the etching solution diluted by water to the outside of the second via hole. In addition, isopropyl alcohol can quickly air-dry the residual water and the etching solution diluted by water on the second via hole and the surface of the transition substrate. Spraying isopropyl alcohol on the surface of the transition substrate away from the silicon wafer after cleaning can avoid residual etching solution in the transition substrate, the second via hole and the groove, avoid excessive etching, and improve the yield of the product.
[0074] Exemplarily, the transition after spraying isopropanol is evaporated with hot nitrogen to accelerate the air-drying speed of the transition substrate, save the processing time of the electronic device, and improve the device processing efficiency.
[0075] According to a second aspect of the embodiments of the present application, an electronic device is provided, which is prepared according to the method for preparing the electronic device according to the first aspect. Figure 4 The present application provides a schematic structural diagram of an electronic device. The electronic device may be a cavity filter, a condenser microphone, or a gas sensor. For example, Figure 4 As shown, the electronic device includes a silicon wafer 100, a first dielectric layer 200 and a second dielectric layer 300. The first dielectric layer 200 is provided with a groove 210, and the second dielectric layer 300 is provided with a second via 310, which is connected to the groove. There is no hydrofluoric acid residue and organic residue on the surface of the second dielectric layer 300, the groove 210 and the second via 310. The adhesion between the device film layer structures is good, which improves the yield and reliability of the product.
[0076] It should be noted that in the above embodiments, the description of each embodiment has its own emphasis, and for parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.
[0077] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working processes of the systems, devices and units described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.
[0078] The above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.
[0079] Although the preferred embodiments of this specification have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of this specification.
[0080] Obviously, those skilled in the art can make various changes and modifications to this specification without departing from the spirit and scope of this specification. Thus, if these modifications and variations of this specification fall within the scope of the claims of this specification and their equivalents, this specification is also intended to include these modifications and variations.
Claims
1. A method for preparing an electronic device, characterized in that: include: A first dielectric layer and a second dielectric layer are sequentially arranged on one side of the silicon wafer; Disposing a photoresist on a side of the second dielectric layer away from the silicon wafer, and patterning the photoresist using a photolithography process to form a first via hole on the photoresist; Etching the second dielectric layer through the first via hole to form a second via hole in the second dielectric layer, wherein the first via hole is connected to the second via hole; removing the photoresist to obtain a transition substrate; Performing ozone cleaning on the transition substrate at least once to remove organic matter on the surface of the transition substrate and in the second via hole; and / or, Performing acid cleaning on the transition substrate at least once to remove organic matter on the surface of the transition substrate and in the second via hole; The transition substrate is cleaned with deionized water at least once.
2. The method for preparing an electronic device according to claim 1, characterized in that: The flow rate of the deionized water is greater than or equal to the flow rate of the acid cleaning; and / or, The cleaning solution for acid cleaning includes hydrofluoric acid, and the volume ratio of the deionized water and the hydrofluoric acid after mixing is 1:1000.
3. The method for preparing an electronic device according to claim 1, characterized in that: Before or after cleaning the transition substrate, the method further comprises: Fixing the transition substrate on an electrostatic chuck; The electrostatic chuck is controlled to drive the transition substrate to rotate.
4. The method for preparing an electronic device according to claim 3, characterized in that: The rotation speed of the transition substrate is 300 to 500 r / min.
5. The method for preparing an electronic device according to claim 2, characterized in that: The flow rate of the acid cleaning is 10 to 20 ml / min; and / or, The flow rate of the deionized water cleaning is 20 to 30 ml / min; and / or, The water temperature of the deionized water is less than 30° C.; and / or, The ozone flow rate is 5 to 9 ml / min.
6. The method for preparing an electronic device according to claim 1, characterized in that: The orthographic projection of the first via hole on the silicon wafer overlaps with the orthographic projection of the second via hole on the silicon wafer.
7. The method for preparing an electronic device according to claim 1, characterized in that: The first dielectric layer includes silicon dioxide, and / or the second dielectric layer includes polysilicon; The first dielectric layer includes a groove, and a notch of the groove is communicated with the second via hole.
8. The method for preparing an electronic device according to claim 7, characterized in that: The angle between the side wall of the second via hole and the plane where the first dielectric layer is located is in the range of 89 to 90°; and / or, The orthographic projection of the second via hole on the silicon wafer overlaps with the groove on the silicon wafer.
9. The method for preparing an electronic device according to claim 1, characterized in that: Also includes: Spraying isopropyl alcohol on the cleaned surface of the transition substrate facing away from the silicon wafer; The transition substrate is subjected to thermal nitrogen evaporation.
10. An electronic device, characterized in that: The electronic device is prepared according to the method for preparing the electronic device according to any one of claims 1 to 9.