Microwave plasma assisted sputtering optical film forming device

Abstract

The invention relates to the technical field of sputtering film forming, and particularly discloses a microwave plasma assisted sputtering optical film forming device which comprises a vacuum box, magnetron sputtering boxes, a vacuum exhaust area and an oxidation reaction area, the magnetron sputtering boxes are installed on the side wall of the vacuum box and are communicated with each other, the two magnetron sputtering boxes are symmetrically distributed about the vacuum box, and the vacuum exhaust area is communicated with the oxidation reaction area. The vacuum exhaust area and the oxidation reaction area are both located on the side wall of the magnetron sputtering box, and a rotating assembly is arranged in the vacuum box. The distance between the magnetron sputtering target material and the substrate is kept, the stability and the film forming effect in the sputtering film forming process are improved, the function of monitoring and controlling the consumption state of the target material is achieved, the observation operation process of people is greatly simplified, the risk after the sputtering target material is plated through is reduced, and the safety is improved; and an oxidation zone is constructed as an oxygen particle activation zone, so that a better oxidation effect is achieved.

Description

Technical Field

[0001] The present invention relates to the technical field of sputtering film forming, and in particular to a microwave plasma assisted sputtering optical film forming device. Background Art

[0002] Optical coating is a technology that deposits one or more layers of thin films with specific optical properties on the surface of optical components to control the reflection, transmission, absorption and scattering of light. Its main purpose is to reduce or increase the reflection, beam splitting, color separation, filtering, polarization and other requirements of light. The three main types of optical coating are dielectric coating, metal coating and mixed coating. Each type has its unique characteristics and application fields. Plasma technology has a wide range of applications in the field of optical coating. It can be used to improve the properties of thin films, such as increasing hardness, reducing reflectivity, and improving wear resistance. Plasma sputtering coating is a process method that uses plasma technology to deposit thin films on solid surfaces. High-energy plasma bombards the surface of the target material so that the target atoms or molecules are ejected from the surface and deposited on the surface of the substrate to form a thin film.

[0003] At present, during the use of sputtering optical film-forming equipment, since sputtering generally uses FR radio frequency excited plasma to assist the oxidation process, and the target material is generally fixed by a mechanical clamp, resulting in a target material consumption process. The distance between the target material and the substrate gradually increases, causing the magnetic field and the electric field to be in dynamic change, resulting in the stability and efficiency of the sputtering film-forming process being insufficient. Generally, people rely on observation experience to prevent the target material from being plated through, and after the target material is plated through, the machine will continue to sputter, and the safety is not high enough. Summary of the invention

[0004] In order to solve the above problems existing in the prior art, the present invention provides a microwave plasma-assisted sputtering optical film-forming device, which can overcome the technical defects.

[0005] The purpose of the present invention can be achieved through the following technical solutions: A microwave plasma-assisted sputtering optical film forming device comprises a vacuum box, a magnetron sputtering box, a vacuum exhaust zone and an oxidation reaction zone, wherein the magnetron sputtering box is installed on the side wall of the vacuum box and is arranged in communication with each other, the two magnetron sputtering boxes are symmetrically distributed with respect to the vacuum box, the vacuum exhaust zone and the oxidation reaction zone are both located on the side wall of the magnetron sputtering box and are symmetrically distributed with respect to the magnetron sputtering box, a rotating assembly is arranged in the vacuum box, and a magnetron sputtering assembly is arranged in the magnetron sputtering box; The rotating assembly includes a rotating shaft, the vacuum box is rotatably mounted with the rotating shaft, the rotating shaft and the vacuum box are coaxially arranged, the rotating shaft is fixedly sleeved with a rotating drum, a plurality of substrates to be coated are mounted on the outer wall of the rotating drum, and a driving assembly for driving the rotating shaft to rotate is arranged at the top of the vacuum box; The magnetron sputtering assembly comprises a metal box seat and a magnetron sputtering target, the top and bottom ends of the metal box seat are respectively installed with connection blocks, the metal box seat is fixedly connected to the magnetron sputtering box through two connection blocks, the magnetron sputtering target is slidably connected to the metal box seat, a cooling back plate is slidably installed in the metal box seat, a plurality of groups of compensation support components for elastically supporting the cooling back plate are arranged in the metal box seat, four groups of limiting components for limiting the magnetron sputtering target are arranged on the side wall of the metal box seat, and a measurement and control component for monitoring the thickness change of the magnetron sputtering target is arranged in the metal box seat; The oxidation reaction zone comprises an airtight box, which is installed on the side wall of the vacuum box. A carrying box is provided through the door panel of the airtight box, and a solid-state microwave source, a tuner and a directional coupler waveguide which are connected in sequence are provided in the carrying box.

[0006] Preferably, the driving assembly includes a motor, a U-shaped frame is fixedly installed on the top of the vacuum box, the motor is fixedly installed on the top of the U-shaped frame, the output shaft of the motor passes through the U-shaped frame and is sleeved with a first pulley, the top of the rotating shaft is sleeved with a second pulley, and a toothed belt is installed between the first pulley and the second pulley.

[0007] Preferably, a delivery pipe for delivering cooling liquid is provided between the top and bottom ends of the cooling back plate, and both ends of the delivery pipe are provided to penetrate the magnetron sputtering box.

[0008] Preferably, the compensation support assembly includes a limit column and a limit tube, the limit column is fixedly installed on the side of the cooling back plate away from the magnetron sputtering target, the limit tube is fixedly installed on the inner wall of the metal box seat, the limit column and the limit tube are slidably sleeved, a limit spring is arranged between the inner wall of the metal box seat and the side wall of the magnetron sputtering target, and the limit spring and the limit tube are sleeved.

[0009] Preferably, the limiting assembly includes a support block, which is fixedly mounted on an outer wall of one side of the metal box seat. The support block is fixedly sleeved with a stud, one end of the stud is threadedly connected to an eccentric wheel, and the eccentric wheel matches the port of the metal box seat.

[0010] Preferably, the side wall of the eccentric wheel is provided with a through hole, and the through hole is located in a region of the eccentric wheel away from the stud.

[0011] Preferably, the measurement and control component includes a controller, a positive wire and a negative wire, the controller is installed on the inner wall of the metal box seat, the controller is electrically connected to the main switch of the optical film forming device, an insulating tube is fixedly installed on the inner wall of the metal box seat, a first conductive ring is fixedly sleeved on one end of the insulating tube close to the cooling back plate, and a second conductive ring is slidably sleeved on the insulating tube, the closed circuit of the controller is disconnected through the positive wire and the negative wire, the positive wire is electrically connected to the first conductive ring, the negative wire is electrically connected to the second conductive ring, and two insulating rods are provided on the outer wall of the second conductive ring, and the insulating rods are fixedly connected to the cooling back plate.

[0012] Preferably, the positive electrode wire and the negative electrode wire are both provided with nylon sleeves, and the side wall of the insulating tube is provided with two notches, and the negative electrode wire matches the notches.

[0013] The beneficial effects of the present invention are: 1. By setting a limit assembly and a compensation support assembly, the beneficial effect that can be obtained is to rotate the eccentric wheel, cancel the limit, install or replace the magnetron sputtering target, and then rotate the eccentric wheel to fix the magnetron sputtering target in cooperation with the compensation support assembly on the other side of the magnetron sputtering target. The sputtering gas in the magnetron sputtering box bombards the magnetron sputtering target, and the atoms on the surface of the target break away from the original lattice and escape, and are transferred to the surface of the substrate to form a film. During the unilateral consumption process of the magnetron sputtering target, the limit spring compensation type pushes the magnetron sputtering target to slide toward the eccentric wheel. The limit tube cooperates with the limit column to improve the stability of the sliding process of the magnetron sputtering target, maintain the distance between the magnetron sputtering target and the substrate, and improve the stability and film forming effect of the sputtering film forming process.

[0014] 2. By setting up the measurement and control component, the beneficial effect that can be obtained is that during the unilateral consumption process of the magnetron sputtering target, the limit spring compensation type pushes the magnetron sputtering target to slide toward the eccentric wheel, and the insulating rod and the second conductive ring slide synchronously on the insulating tube. When the thickness of the magnetron sputtering target is consumed to a preset value, the second conductive ring reaches the fitting position with the first conductive ring, and the control circuit of the controller forms a closed loop through the first conductive ring, the second conductive ring, the positive wire and the negative wire. The sputtering optical film forming device stops running and waits for manual replacement or installation of the target. It has the function of monitoring and controlling the consumption status of the target, greatly simplifies the human observation and operation process, reduces the risk of sputtering target after plating, improves safety, and is of great significance to the field of thin film research.

[0015] 3. By setting the oxidation reaction zone, the beneficial effect that can be obtained is that the airtight box is installed on the side wall of the vacuum box, the door panel of the airtight box is penetrated by a carrier box, and the carrier box is provided with a solid-state microwave source, a tuner and a directional coupler waveguide connected in sequence, and the plasma is excited by the solid-state microwave source to realize the oxidation of the film layer, that is, the oxide film layer is formed by oxidation to improve the stability of the refractive index of the film layer, and the film layer oxidation process is carried out by microwave excitation plasma. A solid-state microwave source with an industrial microwave frequency of MHz is used. Compared with the RF radio frequency excitation plasma method, the frequency of the solid-state microwave source is greatly improved. The RF radio frequency frequency is 13.56MHz, while the microwave frequency of the solid-state microwave source is 2450MHz, which is much higher than the RF radio frequency frequency, thereby greatly improving the efficiency of oxygen activation in the vacuum box. Therefore, in the magnetron sputtering process, it is not necessary to use a high-power radio frequency power supply or multiple radio frequency oxidation sources, which greatly reduces the equipment cost, and through the setting of the solid-state microwave source, the oxidation zone is constructed as an oxygen and other particle activation zone, achieving a better oxidation effect, greatly improving the stability of the refractive index of the film layer, and also greatly improving the quality and yield of the coating product. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to facilitate understanding by those skilled in the art, the present invention is further described below with reference to the accompanying drawings.

[0017] Figure 1 It is a schematic diagram of the overall structure of the present invention; Figure 2 It is a top view of the present invention; Figure 3 This is a diagram of the airtight box in the present invention in an open state; Figure 4 It is a structural diagram of the installation of the rotating assembly in the present invention; Figure 5 It is a schematic diagram of the connection between the solid-state microwave source, tuner and directional coupler waveguide in the present invention; Figure 6 FIG. 1 is a diagram showing the installation structure of the directional coupler waveguide in the present invention; Figure 7 is a cross-sectional view of the magnetron sputtering box of the present invention; Figure 8 This is an installation structure diagram of the limit assembly in the present invention; Fig. 9 is a cross-sectional view of the metal box seat in the present invention; Fig.10 This is a diagram of the installation structure of the delivery pipe in the present invention; Fig.11 This is a diagram of the installation structure of the measurement and control component in the present invention.

[0018] Description of reference numerals: In the figure: 1. vacuum box; 11. rotating shaft; 12. rotating drum; 13. substrate; 14. U-shaped frame; 15. motor; 16. first pulley; 17. second pulley; 18. toothed belt; 2. magnetron sputtering box; 21. metal box seat; 22. connecting block; 23. magnetron sputtering target; 24. cooling back plate; 25. conveying pipe; 3. vacuum exhaust area; 4. oxidation reaction area; 41. airtight box; 42. carrying box; 43. solid-state microwave source; 44. tuner; 45. directional coupler waveguide; 51. limiting column; 52. limiting tube; 53. limiting spring; 54. supporting block; 55. stud; 56. eccentric wheel; 57. through hole; 61. controller; 62. insulating tube; 63. first conductive ring; 64. second conductive ring; 65. positive wire; 66. negative wire; 67. insulating rod. DETAILED DESCRIPTION

[0019] In order to further explain the technical means and effects adopted by the present invention to achieve the predetermined invention purpose, the specific implementation methods, structures, features and effects of the present invention are clearly and completely described below in combination with the accompanying drawings and preferred embodiments. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0020] In the description of the present application, it should be understood that the orientation or position relationship indicated by "inside", "outside", etc. is based on the orientation or position described in the drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, a specific orientation structure and operation, and therefore cannot be understood as a limitation on the present application.

[0021] Reference Figure 1-Figure 11, which is a microwave plasma-assisted sputtering optical film-forming device disclosed in the present invention, comprising a vacuum box 1, a magnetron sputtering box 2, a vacuum exhaust zone 3 and an oxidation reaction zone 4, wherein the magnetron sputtering box 2 is installed on the side wall of the vacuum box 1 and is arranged in communication, and the two magnetron sputtering boxes 2 are symmetrically distributed with respect to the vacuum box 1, and the vacuum exhaust zone 3 and the oxidation reaction zone 4 are both located on the side wall of the magnetron sputtering box 2 and are symmetrically distributed with respect to the magnetron sputtering box 2, and the oxidation reaction zone 4 comprises an airtight box 41, which is installed on the side wall of the vacuum box 1, and a carrier box 42 is provided through the door panel of the airtight box 41, and a solid-state microwave source 43, a tuner 44 and a directional coupler waveguide 45 connected in sequence are provided in the carrier box 42, and plasma is excited by the solid-state microwave source 43 to realize film layer oxidation, that is, an oxide film layer is formed by oxidation to improve the stability of the refractive index of the film layer, and this embodiment The film oxidation process is carried out by microwave-excited plasma. The present embodiment adopts a solid-state microwave source 43 with an industrial microwave frequency of 2450 MHz. Compared with the RF radio frequency excited plasma method, the frequency of the solid-state microwave source 43 is greatly improved. The RF radio frequency frequency is 13.56 MHz, while the microwave frequency of the solid-state microwave source 43 is 2450 MHz, which is much higher than the RF radio frequency. This greatly improves the efficiency of oxygen activation in the vacuum box 1. Therefore, during the magnetron sputtering process, there is no need to use a high-power radio frequency power supply or a plurality of radio frequency oxidation sources, which greatly reduces the equipment cost. In addition, through the setting of the solid-state microwave source 43, the oxidation zone is constructed as an oxygen and other particle activation zone, achieving a better oxidation effect, greatly improving the stability of the refractive index of the film layer, and also greatly improving the quality and yield of the coating product.

[0022] A rotating assembly is arranged in the vacuum box 1, and the rotating assembly includes a rotating shaft 11. The vacuum box 1 is rotatably installed with the rotating shaft 11, and the rotating shaft 11 is coaxially arranged with the vacuum box 1. The rotating shaft 11 is fixedly sleeved with a rotating drum 12, and a plurality of substrates 13 to be coated are installed on the outer wall of the rotating drum 12. A driving assembly for driving the rotating shaft 11 to rotate is arranged at the top of the vacuum box 1, and the driving assembly includes a motor 15. A U-shaped frame 14 is fixedly installed at the top of the vacuum box 1, and the motor 15 is fixedly installed at the top of the U-shaped frame 14. The output shaft of the motor 15 passes through the U-shaped frame 14 and is sleeved with a first pulley 16. A second pulley 17 is sleeved at the top of the rotating shaft 11, and a toothed belt 18 is installed between the first pulley 16 and the second pulley 17. A sputtering gas inlet pipe is arranged through the magnetron sputtering box 2 to be connected with an external sputtering gas source. An external sputtering gas source not shown in the figure supplies sputtering gas to the magnetron sputtering box 2 through the sputtering gas inlet pipe. Magnetron sputtering box 2, the basic principle of magnetron sputtering is to use the plasma in the Ar-O2 mixed gas to bombard the target surface with accelerated high-energy particles under the action of the electric field and the alternating magnetic field. After the energy exchange, the atoms on the target surface break away from the original lattice and escape, and are transferred to the substrate surface to form a film. In addition, the magnetic field captures electrons near the target surface, enhances the generation of plasma and increases the injection speed of the target. Magnetron sputtering is a prior art and will not be elaborated in detail in this embodiment. The motor 15 drives the first pulley 16 to rotate, cooperates with the toothed belt 18, drives the second pulley 17 and the rotating shaft 11 to rotate synchronously, and the rotating drum 12 rotates synchronously, driving multiple substrates 13 to rotate. The vacuum exhaust area 3 uses the vacuum exhaust system to exhaust the vacuum box 1, and the sputtering gas and the reaction gas are introduced into the vacuum box 1 by the sputtering gas inlet pipe and the oxidation reaction area 4 respectively, and the vacuum box 1 reaches a specified pressure state.

[0023] A dielectric layer is arranged in the magnetron sputtering box 2, and a magnetron sputtering assembly is arranged in the magnetron sputtering box 2. The magnetron sputtering assembly includes a metal box seat 21 and a magnetron sputtering target 23. The part of the metal box seat 21 that fits with the side wall of the magnetron sputtering target 23 is made of conductive metal and the remaining part is made of insulating material. The top and bottom ends of the metal box seat 21 are respectively installed with connecting blocks 22. The metal box seat 21 is fixedly connected to the magnetron sputtering box 2 through two connecting blocks 22. The magnetron sputtering target 23 is slidably connected to the metal box seat 21. A cooling back plate 24 is slidably installed in the metal box seat 21. The top and bottom ends of the cooling back plate 24 are connected to each other. A delivery pipe 25 for delivering coolant is arranged through the metal box seat 21, and both ends of the delivery pipe 25 are arranged through the magnetron sputtering box 2. A plurality of compensation support components for elastically supporting the cooling back plate 24 are arranged in the metal box seat 21. The compensation support components include a limit column 51 and a limit tube 52. The limit column 51 is fixedly installed on the side of the cooling back plate 24 away from the magnetron sputtering target 23. The limit tube 52 is fixedly installed on the inner wall of the metal box seat 21. The limit column 51 and the limit tube 52 are slidably sleeved. A limit spring 53 is arranged between the inner wall of the metal box seat 21 and the side wall of the magnetron sputtering target 23. The limit spring 53 and the limit The tube 52 is sleeved, and the side wall of the metal box seat 21 is provided with four groups of limiting components for limiting the magnetron sputtering target 23. The limiting components include a support block 54, and the support block 54 is fixedly installed on one side outer wall of the metal box seat 21. The support block 54 is fixedly sleeved with a stud 55, and one end of the stud 55 is threadedly connected to an eccentric wheel 56. The eccentric wheel 56 matches the port of the metal box seat 21. The side wall of the eccentric wheel 56 is provided with a through hole 57, and the through hole 57 is located in the area where the eccentric wheel 56 is away from the stud 55. The eccentric wheel 56 is rotated to cancel the limit, and the magnetron sputtering target 23 is installed or replaced, and then the eccentric wheel 56 is rotated. The magnetron sputtering target 23 is fixed in place by cooperating with the compensation support assembly on the other side of the magnetron sputtering target 23. The sputtering gas in the magnetron sputtering box 2 bombards the magnetron sputtering target 23. The atoms on the surface of the target break away from the original lattice and escape, and are transferred to the surface of the substrate to form a film. During the unilateral consumption of the magnetron sputtering target 23, the limit spring 53 compensatingly pushes the magnetron sputtering target 23 to slide toward the eccentric wheel 56. The limit tube 52 cooperates with the limit column 51 to improve the stability of the sliding process of the magnetron sputtering target 23, maintain the distance between the magnetron sputtering target 23 and the substrate 13, and improve the stability of the sputtering film forming process and the film forming effect.

[0024] A measurement and control component for monitoring the thickness change of the magnetron sputtering target 23 is arranged in the metal box seat 21, and the measurement and control component includes a controller 61, a positive wire 65 and a negative wire 66. The controller 61 is installed on the inner wall of the metal box seat 21, and the controller 61 is electrically connected to the main switch of the optical film forming device. An insulating tube 62 is fixedly installed on the inner wall of the metal box seat 21, and one end of the insulating tube 62 close to the cooling back plate 24 is fixedly sleeved with a first conductive ring 63, and the insulating tube 62 is slidably sleeved with a second conductive ring 64. The closed circuit of the controller 61 is disconnected through the positive wire 65 and the negative wire 66. Both the positive wire 65 and the negative wire 66 are provided with nylon sleeves. The side wall of the insulating tube 62 is provided with two notches, and the negative wire 66 matches the notch. The positive wire 65 is connected to the first conductive ring 63. The electric ring 63 is electrically connected, the negative electrode wire 66 is electrically connected to the second conductive ring 64, and the outer wall of the second conductive ring 64 is provided with two insulating rods 67, and the insulating rods 67 are fixedly connected to the cooling back plate 24. During the unilateral consumption of the magnetron sputtering target 23, the limit spring 53 compensatingly pushes the magnetron sputtering target 23 to slide toward the eccentric wheel 56, and the insulating rod 67 and the second conductive ring 64 slide synchronously on the insulating tube 62. When the thickness of the magnetron sputtering target 23 is consumed to a preset value, the second conductive ring 64 reaches a position in contact with the first conductive ring 63, and the control circuit of the controller 61 forms a closed loop through the first conductive ring 63, the second conductive ring 64, the positive electrode wire 65 and the negative electrode wire 66, and the sputtering optical film forming device stops running, waiting for manual replacement or installation of the target.

[0025] The working principle and use process of the present invention are as follows: the motor 15 drives the first pulley 16 to rotate, cooperates with the toothed belt 18, drives the second pulley 17 and the rotating shaft 11 to rotate synchronously, and the rotating drum 12 rotates synchronously to drive the multiple substrates 13 to rotate. The vacuum exhaust area 3 uses the vacuum exhaust system to exhaust the vacuum box 1, and introduces sputtering gas and reaction gas into the vacuum box 1 through the sputtering gas introduction pipe and the oxidation reaction area 4 respectively. The vacuum box 1 reaches a specified pressure state, and the plasma is excited by the solid-state microwave source 43 to achieve film oxidation, that is, an oxide film layer is formed by oxidation to improve the stability of the refractive index of the film layer. The eccentric wheel 56 is rotated to cancel the limit, and the magnetron sputtering target 23 is installed or replaced. The eccentric wheel 56 is rotated again, and the compensation support assembly on the other side of the magnetron sputtering target 23 is cooperated to fix the magnetron sputtering target 23. The sputtering gas in the magnetron sputtering box 2 bombards the magnetron sputtering target 23, and the atoms on the surface of the target escape from the original lattice, and the transfer The magnetron sputtering target 23 is unilaterally consumed and the film is formed on the surface of the substrate. During the unilateral consumption process of the magnetron sputtering target 23, the limit spring 53 compensatingly pushes the magnetron sputtering target 23 to slide toward the eccentric wheel 56. The limit tube 52 cooperates with the limit column 51 to improve the stability of the sliding process of the magnetron sputtering target 23, maintains the distance between the magnetron sputtering target 23 and the substrate 13, and improves the stability and film forming effect of the sputtering film forming process. During the unilateral consumption process of the magnetron sputtering target 23, the limit spring 53 compensatingly pushes the magnetron sputtering target 23 to slide toward the eccentric wheel 56. The insulating rod 67 and the second conductive ring 64 slide synchronously on the insulating tube 62. When the thickness of the magnetron sputtering target 23 is consumed to a preset value, the second conductive ring 64 reaches a position of fitting with the first conductive ring 63. The control circuit of the controller 61 forms a closed loop through the first conductive ring 63, the second conductive ring 64, the positive wire 65 and the negative wire 66. The sputtering optical film forming device stops running and waits for manual replacement or installation of the target.

[0026] The above description is only a preferred embodiment of the present invention and does not limit the present invention in any form. Although the present invention has been disclosed as a preferred embodiment as above, it is not used to limit the present invention. Any technical personnel in this field can make some changes or modify the technical contents disclosed above into equivalent embodiments without departing from the scope of the technical solution of the present invention. However, any brief modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solution of the present invention still fall within the scope of the technical solution of the present invention.

Claims

1. A microwave plasma-assisted sputtering optical film forming device, comprising a vacuum box (1), a magnetron sputtering box (2), a vacuum exhaust zone (3) and an oxidation reaction zone (4), characterized in that: The magnetron sputtering boxes (2) are installed on the side walls of the vacuum box (1) and are arranged in communication with each other; the two magnetron sputtering boxes (2) are symmetrically distributed with respect to the vacuum box (1); the vacuum exhaust area (3) and the oxidation reaction area (4) are both located on the side walls of the magnetron sputtering boxes (2) and are symmetrically distributed with respect to the magnetron sputtering boxes (2); a rotating assembly is arranged in the vacuum box (1); and a magnetron sputtering assembly is arranged in the magnetron sputtering box (2); The rotating assembly comprises a rotating shaft (11), the vacuum box (1) is rotatably mounted with the rotating shaft (11), the rotating shaft (11) and the vacuum box (1) are coaxially arranged, the rotating shaft (11) is fixedly sleeved with a rotating drum (12), a plurality of substrates (13) to be coated are mounted on the outer wall of the rotating drum (12), and a driving assembly for driving the rotating shaft (11) to rotate is arranged at the top end of the vacuum box (1); The magnetron sputtering assembly comprises a metal box seat (21) and a magnetron sputtering target (23); the top and bottom ends of the metal box seat (21) are respectively provided with connecting blocks (22); the metal box seat (21) is fixedly connected to the magnetron sputtering box (2) via the two connecting blocks (22); the magnetron sputtering target (23) is slidably connected to the metal box seat (21); a cooling back plate (24) is slidably installed in the metal box seat (21); a plurality of groups of compensating support components for elastically supporting the cooling back plate (24) are arranged in the metal box seat (21); four groups of limiting components for limiting the magnetron sputtering target (23) are arranged on the side wall of the metal box seat (21); and a measurement and control component for monitoring the thickness change of the magnetron sputtering target (23) is arranged in the metal box seat (21); The oxidation reaction zone (4) comprises an airtight box (41), the airtight box (41) being mounted on a side wall of a vacuum box (1), a carrying box (42) being provided through a door panel of the airtight box (41), and a solid-state microwave source (43), a tuner (44) and a directional coupler waveguide (45) being provided in sequence.

2. The microwave plasma-assisted sputtering optical film forming device according to claim 1, characterized in that: The driving assembly comprises a motor (15); a U-shaped frame (14) is fixedly mounted on the top of the vacuum box (1); the motor (15) is fixedly mounted on the top of the U-shaped frame (14); an output shaft of the motor (15) passes through the U-shaped frame (14) and is sleeved with a first pulley (16); a second pulley (17) is sleeved with the top of the rotating shaft (11); and a toothed belt (18) is mounted between the first pulley (16) and the second pulley (17).

3. The microwave plasma assisted sputtering optical film forming device according to claim 1, characterized in that: A delivery pipe (25) for delivering cooling liquid is provided between the top end and the bottom end of the cooling back plate (24), and both ends of the delivery pipe (25) are provided to penetrate the magnetron sputtering box (2).

4. The microwave plasma assisted sputtering optical film forming device according to claim 1, characterized in that: The compensation support assembly comprises a limit column (51) and a limit tube (52); the limit column (51) is fixedly mounted on a side of the cooling back plate (24) away from the magnetron sputtering target (23); the limit tube (52) is fixedly mounted on the inner wall of the metal box seat (21); the limit column (51) and the limit tube (52) are slidably sleeved; a limit spring (53) is arranged between the inner wall of the metal box seat (21) and the side wall of the magnetron sputtering target (23); the limit spring (53) and the limit tube (52) are sleeved.

5. The microwave plasma assisted sputtering optical film forming device according to claim 1, characterized in that: The limiting assembly comprises a support block (54), the support block (54) being fixedly mounted on an outer wall of one side of the metal box seat (21), the support block (54) being fixedly sleeved with a stud (55), one end of the stud (55) being threadedly connected to an eccentric wheel (56), and the eccentric wheel (56) being matched with a port of the metal box seat (21).

6. The microwave plasma assisted sputtering optical film forming device according to claim 5, characterized in that: A through hole (57) is provided on the side wall of the eccentric wheel (56), and the through hole (57) is located in a region of the eccentric wheel (56) away from the stud (55).

7. The microwave plasma assisted sputtering optical film forming device according to claim 1, characterized in that: The measurement and control component includes a controller (61), a positive wire (65) and a negative wire (66). The controller (61) is installed on the inner wall of the metal box seat (21). The controller (61) is electrically connected to the main switch of the optical film forming device. An insulating tube (62) is fixedly installed on the inner wall of the metal box seat (21). The end of the insulating tube (62) close to the cooling back plate (24) is fixedly sleeved with a first conductive ring (63). The insulating tube (62) is slidably sleeved with a second conductive ring (64). The closed circuit of the controller (61) is disconnected through the positive wire (65) and the negative wire (66). The positive wire (65) is electrically connected to the first conductive ring (63), and the negative wire (66) is electrically connected to the second conductive ring (64). The outer wall of the second conductive ring (64) is provided with two insulating rods (67), and the insulating rods (67) are fixedly connected to the cooling back plate (24).

8. The microwave plasma assisted sputtering optical film forming device according to claim 7, characterized in that: The positive electrode wire (65) and the negative electrode wire (66) are both provided with nylon sleeves, and the side wall of the insulating tube (62) is provided with two notches, and the negative electrode wire (66) matches the notches.

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