A temperature compensation method for resistor array infrared imaging

Abstract

The present invention relates to the field of thermal imaging technology, and specifically to a temperature compensation method for infrared imaging of a resistor array, comprising: gridding the resistor array, obtaining local windows in which resistors of different sizes light up in each grid, and the input voltage of all resistors in the resistor array is the same; obtaining noise degree performance according to the radiation intensity distribution of each resistor in each grid under the input voltage in the local window corresponding to each size and the radiation area distribution; obtaining the preferred degree of each local window by comprehensively considering the radiation conditions of all resistors in the local windows corresponding to all input voltages and each size; screening out the best local window by using the preferred degree, and based on the best local window, using the sparse grid method to perform uniformity correction on the resistors in the resistor array, and completing temperature compensation for infrared imaging of the resistor array. The present invention not only improves the effect of non-uniformity correction, but also reduces the accumulation of errors.

Description

Technical Field

[0001] The invention relates to the technical field of thermal imaging, and in particular to a temperature compensation method for resistor array infrared imaging. Background Art

[0002] The resistor array is composed of multiple resistor units, which are arranged in a specific array structure value. The resistor array can receive and respond to signals and convert digital grayscale image signals into infrared radiation signals. The resistor array is a key part of the infrared imaging semi-physical simulation system. Ideally, if the same driving voltage is input to all the resistor units on the resistor array, each resistor unit will emit the same infrared radiation signal. However, in practice, for the same driving voltage, due to factors such as the inherent non-uniformity of the resistor array itself, the non-uniformity caused by the bus voltage drop, and the non-uniformity caused by the dark current of the resistor array, the infrared radiation signals emitted by each resistor unit will be different. Therefore, the resistor array needs to be corrected for non-uniformity before actual use.

[0003] The sparse grid method is a commonly used method for resistor array non-uniformity correction. This method divides the resistor array into equally spaced grids, gradually lights up the resistors in blocks, and analyzes the non-uniformity between resistors in different grids. However, the number or range of resistors lit each time in the traditional sparse grid method is a fixed value set based on experience, and the redundancy is interfered by background infrared radiation and random noise, resulting in poor correction effect for resistor array non-uniformity, which in turn leads to poor temperature compensation results for resistor array infrared imaging. Summary of the invention

[0004] In order to solve the technical problem that the unreasonable setting of the lighting resistor in the existing sparse grid method makes the correction effect of the resistor array non-uniformity poor, and then leads to the poor temperature compensation result of the resistor array infrared imaging, the purpose of the present invention is to provide a temperature compensation method for the resistor array infrared imaging, and the technical scheme adopted is as follows:

[0005] The resistor array is divided into grids, and local windows of lightened resistors of different sizes are obtained in each grid, wherein the input voltages of all resistors in the resistor array are the same;

[0006] According to the radiation intensity distribution and radiation area distribution of each resistor in each grid under the input voltage in the local window corresponding to each size, combined with the data difference of each resistor in the local window corresponding to each size and other sizes, the noise level performance of each resistor under each size and each input voltage is obtained;

[0007] The noise ratio is analyzed based on the noise performance of each resistor at each size and different input voltages, and the radiation of all resistors in the local window corresponding to all input voltages and each size is combined to obtain the optimization degree of the local window corresponding to each size;

[0008] The optimal local window is screened out using the optimization degree, and based on the optimal local window, the uniformity of the resistors in the resistor array is corrected using a sparse grid method to complete the temperature compensation of the resistor array infrared imaging.

[0009] Preferably, the noise level performance of each resistor at each size and each input voltage is obtained according to the radiation intensity distribution and radiation area distribution of each resistor in each grid under the input voltage in the local window corresponding to each size, combined with the data difference of each resistor in the local window corresponding to each size and other sizes, specifically including:

[0010] Any resistor in all grids in the resistor array is used as the resistor to be analyzed, a local window corresponding to any size is used as the selected window, and local windows corresponding to other sizes except the selected window are used as reference windows;

[0011] For any input voltage:

[0012] Determine a first difference factor corresponding to each reference window based on a difference between an average radiation heat of the resistor to be analyzed in the selected window and an average radiation heat of the resistor in each reference window;

[0013] Determine a second difference factor corresponding to each reference window based on a difference between an average radiation area of ​​the resistance to be analyzed in the selected window and an average radiation area of ​​the resistance in each reference window;

[0014] According to the data distribution of the first difference factor and the second difference factor corresponding to all reference windows, the noise level performance of the resistance to be analyzed under the selected window and the input voltage is obtained.

[0015] Preferably, obtaining the noise level performance of the resistance to be analyzed under the selected window and the input voltage according to the data distribution of the first difference factor and the second difference factor corresponding to all reference windows specifically includes:

[0016] The ratio of the first difference factor and the second difference factor corresponding to each reference window is used as the data difference degree of each reference window;

[0017] If the data difference degree of the reference window is less than the preset difference threshold, the value of the data difference coefficient of the reference window is set to a preset value;

[0018] If the data difference degree of the reference window is greater than or equal to the preset difference threshold, the data difference degree is used as the data difference coefficient of the reference window, and at this time the data difference coefficient is greater than the preset value;

[0019] The data difference coefficients of all reference windows are combined to obtain the noise level performance of the resistor to be analyzed under the selected window and the input voltage.

[0020] Preferably, the method for obtaining the average radiant heat of the resistor in the selected window is specifically as follows:

[0021] When all the resistors to be analyzed within the selected window are illuminated by any one of the input voltages, the ratio between the total radiated heat within the selected window and the total area of ​​the selected window is calculated to obtain the average radiated heat of the resistors within the selected window;

[0022] The method for obtaining the average radiation area of ​​the resistor in the selected window is specifically as follows:

[0023] When all the resistors to be analyzed within the selected window are illuminated by any one of the input voltages, the ratio between the total radiation area and the total area of ​​the selected window is calculated to obtain the average radiation area of ​​the resistors within the selected window.

[0024] Preferably, the noise proportion is analyzed according to the noise level performance of each resistor at each size and different input voltages, and the radiation of all resistors in the local window corresponding to all input voltages and each size is comprehensively considered to obtain the preferred degree of the local window corresponding to each size, specifically including:

[0025] According to the total radiation heat and the total radiation area of ​​the resistor to be analyzed within the selected window range, combined with the noise level performance, the radiation signal-to-noise ratio of the resistor to be analyzed under the selected window and the input voltage is obtained;

[0026] The preferred degree of the selected window is obtained according to the radiation signal-to-noise ratio of all resistors in the selected window and under all input voltages, combined with the average radiation area of ​​all resistors in the selected window under all input voltages.

[0027] Preferably, the method for acquiring the radiation signal-to-noise ratio is specifically:

[0028] For any input voltage, the product of the noise level performance and the total radiation area of ​​the resistor to be analyzed under the selected window and input voltage is calculated, and the ratio of the total radiation heat of the resistor to be analyzed within the selected window range to the product is used as the radiation signal-to-noise ratio.

[0029] Preferably, the method for obtaining the preference degree of the selected window is specifically:

[0030] Under any input voltage, the product of the average radiation area of ​​each resistor in the grid in the selected window and the radiation signal-to-noise ratio is used as an effect evaluation index of each resistor under the selected window and any input voltage;

[0031] For the selected window, the effect evaluation indexes corresponding to all resistors under all input voltages are accumulated to obtain the degree of preference of the selected window.

[0032] Preferably, the method further comprises:

[0033] According to the radiation intensity distribution of each resistor in each grid under the input voltage in the optimal local window and the noise level performance, the infrared radiation value is adjusted to obtain the adjusted radiation value of each resistor in each grid;

[0034] Based on the adjusted radiation value and the optimal local window, the uniformity of the resistors in the resistor array is corrected using a sparse grid method.

[0035] Preferably, the method for obtaining the adjusted radiation value is specifically as follows:

[0036] For any input voltage, the product of the corresponding noise level performance of each resistor in the grid under the optimal local window and the total radiation area is taken as the noise characteristic factor; the difference between the infrared radiation value of each resistor under the optimal local window and the noise characteristic factor is taken as the adjusted radiation value of each resistor.

[0037] Preferably, the selecting the best local window by using the optimization degree specifically includes:

[0038] The local window with the size corresponding to the maximum value of the preference degree is taken as the optimal local window.

[0039] The embodiments of the present invention have at least the following beneficial effects:

[0040] The present invention first divides the resistor array that needs to be analyzed into grids, and sets local windows of different sizes at the same time. The resistors in the corresponding range of the local windows of different sizes are lit up with the same input voltage, and the characteristic analysis of the radiation situation is performed to provide a data basis for the subsequent. Then, for the difference in two aspects of radiation information when the resistors in the grid are lit up in local windows of different sizes under each input voltage, the noise performance in the lighting range corresponding to the local window is quantitatively characterized, wherein the two aspects of radiation information include radiation intensity and radiation area. Furthermore, for the lighting range corresponding to the local windows of different sizes of the resistors in the grid under each input voltage, the noise proportion of the lighting range is analyzed based on the noise performance, and the quality of the non-uniformity correction operation using the local window is evaluated to obtain the preferred degree by comprehensively considering all the input voltages of all resistors. Finally, the optimal range of the lighting resistor using the sparse grid method can be adaptively obtained through the degree of optimization. That is, the optimal local window represents the optimal range of the lighting resistor. The non-uniformity correction operation of the resistor array is performed based on the optimal local window. This can not only improve the effect of the non-uniformity correction, but also reduce the accumulation of errors. The temperature compensation result of the infrared imaging of the resistor array is better, which can make the infrared imaging more stable and reliable. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] In order to more clearly illustrate the technical solutions and advantages in the embodiments of the present invention or the prior art, the drawings required for use in the embodiments or the prior art descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0042] Figure 1 It is a flow chart of the steps of a temperature compensation method for resistor array infrared imaging provided by the present invention;

[0043] Figure 2 It is a schematic diagram of infrared imaging results corresponding to lighting a single resistor under each grid in the sparse grid method provided by the present invention;

[0044] Figure 3 is a flowchart of the steps of the method for obtaining the noise level representation provided by the present invention;

[0045] Figure 4 is a flowchart of the steps of the preferred acquisition method provided by the present invention;

[0046] Figure 5 It is a structural schematic diagram of a temperature compensation system for resistor array infrared imaging provided by the present invention;

[0047] Figure 6It is a structural schematic diagram of a computer device provided by the present invention. DETAILED DESCRIPTION

[0048] In order to further explain the technical means and effects adopted by the present invention to achieve the predetermined invention purpose, the following is a detailed description of the temperature compensation method of a resistor array infrared imaging proposed by the present invention, its specific implementation, structure, features and effects, in conjunction with the accompanying drawings and preferred embodiments. In the following description, different "one embodiment" or "another embodiment" does not necessarily refer to the same embodiment. In addition, specific features, structures or characteristics in one or more embodiments may be combined in any suitable form.

[0049] Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.

[0050] The specific scheme of the temperature compensation method for resistor array infrared imaging provided by the present invention is described in detail below with reference to the accompanying drawings.

[0051] The specific implementation scenario targeted by the present invention is as follows: in the traditional sparse grid method, the number of resistors lit each time is small, the corresponding local range of lighting is small, and the heat generation of a single resistor is insufficient, resulting in a weak radiation brightness of a single resistor. Therefore, when performing resistor array non-uniformity analysis, it is easily interfered by background infrared radiation and random noise, which affects the correction result of the resistor array non-uniformity. Therefore, this embodiment considers lighting up resistors under different window sizes in a single grid, and adaptively determines the size of the local range with better lighting effect through the difference in radiation intensity of the corresponding resistors under different windows, so as to improve the accuracy of the resistor array non-uniformity correction.

[0052] The main purpose of the present invention is to adaptively analyze the local window where the range of the lighting resistors in each grid in the sparse grid method is located, while ensuring that the coupling between resistors in different windows is small, reduce the influence of background noise on the subsequent non-uniformity correction operation of the resistor array as much as possible, and finally adaptively obtain the best resistor lighting range to ensure the effect and accuracy of the resistor array non-uniformity correction.

[0053] See also Figure 1 , which shows a flow chart of the steps of a temperature compensation method for resistor array infrared imaging provided by an embodiment of the present invention, the method comprising the following steps:

[0054] Step S100, dividing the resistor array into grids, obtaining local windows in each grid where resistors of different sizes are lit, and the input voltages of all resistors in the resistor array are the same.

[0055] In the application of resistor array, the traditional sparse grid method reduces the radiation coupling between resistors during the measurement process by selecting a sparse grid. The main purpose is to achieve a more accurate analysis of the heating situation of a single resistor, such as Figure 2 This is the infrared imaging result corresponding to lighting up a single resistor under each grid in the sparse grid method.

[0056] Based on this, in order to provide a data basis for the subsequent characteristic analysis of the radiation differences in different lighting ranges in each grid in the resistor array, it is first necessary to divide the resistor array into grids according to the traditional sparse grid method, and set local windows with different lighting ranges.

[0057] In this embodiment, the grid division size is set by the radiation radius of a single resistor of the resistor element in the current resistor array. Specifically, considering that there are certain differences in the resistor elements in different resistor arrays, in order to avoid coupling, the division size of the sparse grid can be set to , where R is the radiation radius of a single resistor corresponding to the resistor element in the resistor array to be analyzed, and the number of resistors contained in each grid is recorded as indivual, The minimum value of is 4. It should be noted that the setting of the grid size is a well-known technology and will not be introduced in detail here. For example, the paper "Research on Adaptive Correction Technology of Resistor Array Non-uniformity" written by Yu Chunna has records of this.

[0058] In this embodiment, the size of the local window can be expressed as , the value of n can be , n is the side length of the local window of the lighting resistor, is the side length of the grid. Local windows of different sizes represent the range or number of resistors that are lit in the grid. For example, when the size of the local window in each grid is When , it means that for the position of the i-th resistor, only all the resistors at the same position as the i-th resistor in each grid are lit up. When the size of the local window in each grid is When the i-th resistor The resistors are lit within the window range, and at the same time, the resistors at the same position as the i-th resistor in each grid need to be lit. All resistors are within the window range.

[0059] It should be noted that when the sparse grid method is used to perform non-uniformity correction on the resistor array, different driving voltages need to be input to the resistors in the resistor array for testing, so this embodiment considers that the input voltages of all resistors in the resistor array are the same. That is, the input voltages between individual resistors are the same, so that they radiate heat outward, and the radiated heat value of the resistor is recorded by an infrared imager.

[0060] It should be noted that for any grid, all resistors that are lit in the local window of the i-th resistor will radiate heat outward, and the total heat radiated by the i-th resistor in a local window can be obtained. At the same time, all resistors in the local window where the i-th resistor is located will radiate outward within a certain range when they are lit, that is, the total radiation area of ​​the i-th resistor in a local range window can be obtained.

[0061] Step S200, based on the radiation intensity distribution and radiation area distribution of each resistor in each grid under the input voltage in the local window corresponding to each size, combined with the data difference of each resistor in the local window corresponding to each size and other sizes, the noise level performance of each resistor at each size and each input voltage is obtained.

[0062] Taking into account that a single resistor in the resistor array generates less heat and is relatively more susceptible to noise interference, the reliability of the infrared radiation detection results can be increased by increasing the number of simultaneously lit resistors in each grid. As the local window where the lit resistors are located gradually increases, the coupling between the lit resistors in different grids will also increase. Therefore, it is necessary to analyze the radiation intensity emitted by resistors in local windows of different sizes, and fully consider the noise when the resistors emit radiation to select the size of the local window with the best effect.

[0063] Based on this, this embodiment first analyzes the situation where the lighting resistor in the resistor array is affected by noise when emitting radiation. Specifically, in an ideal situation, that is, when there is no background radiation noise, the non-uniformity correction result of the traditional sparse grid method is more accurate, but the influence of background noise is objective, and thus the background noise part will have a certain impact on the correction result.

[0064] When the lit local window corresponding to each resistor in the grid is small, the heat generated by a single resistor is the sum of the radiation heat of the resistor itself and the radiation heat of the background noise. When performing radiation heat detection, the infrared imager will select the radiation area according to the radiation intensity. The background noise under the radiation area will increase the total radiation intensity of a single resistor.

[0065] When the local window corresponding to the lighting of each resistor in the grid is large, there are multiple resistors around a single resistor that generate heat together, and the distance between them is close, and the generated radiation area is smaller than the sum of the areas of multiple smaller radiation areas. Therefore, although the sum of the noise levels contained in the larger lighting area is larger, for a single resistor in the resistor array, the noise level contained in the resistor in the larger lighting area is relatively low, and the difference in noise levels of a single resistor between different lighting ranges will increase with the increase of background noise.

[0066] Based on this, we can analyze the changes in radiation intensity in local windows of different sizes and the effects of noise on each resistor in each grid in a local window of corresponding size when the input voltage is constant. In the process of quantitatively characterizing the degree of noise, the radiation intensity distribution and radiation area distribution of the resistor in a local window of corresponding size, as well as the differences in data performance with other local windows of different sizes are taken into account. Multiple aspects of data features can more accurately reflect the effects of noise on changes in window size.

[0067] In this embodiment, if Figure 3 As shown, the method for obtaining the noise level representation can be implemented by steps S201 to S204.

[0068] Step S201 , taking any resistor in all grids in the resistor array as a resistor to be analyzed, taking a local window corresponding to any size as a selected window, and taking local windows corresponding to other sizes except the selected window as reference windows.

[0069] In this embodiment, any resistor is used as an example for description. For example, the i-th resistor in all grids in the resistor array is used as the resistor to be analyzed, and then the characteristic analysis of the noise situation is performed for any local window of a size around the i-th resistor. For example, the local window with a side length of n is used as the selected window, and then the local windows of other sizes except the side length of n are all reference windows corresponding to the selected window. At the same time, it is necessary to analyze the situation of the resistor being lit under different input voltages, so this embodiment is also described by taking any input voltage as an example. For example, when the input voltage is V, the radiation situation of each resistor under the selected window is analyzed.

[0070] Step S202, determining a first difference factor corresponding to each reference window based on a difference between an average radiant heat of the resistor to be analyzed in the selected window and an average radiant heat of the resistor in each reference window.

[0071] There will be overlaps between the radiation areas of different resistors in the local window. When the background noise has a small impact on the local windows of different sizes, the overlap will not lead to a large difference in the radiation conditions corresponding to the local windows of different sizes. However, when the background noise has a large impact, there will be a large difference in the radiation conditions corresponding to the local windows of different sizes. In this implementation, the difference in radiation conditions in two aspects is mainly considered when the resistors of the local windows of different sizes are lit.

[0072] First, the differences in radiation heat when the resistors of local windows of different sizes are lit are analyzed.

[0073] The resistors within the selected window of the resistor to be analyzed are illuminated by the input voltage V, and the total radiation heat generated within the selected window range can be obtained by the infrared imager. Based on this, when all the resistors within the selected window of the resistor to be analyzed are illuminated by any input voltage, the ratio between the total radiation heat within the selected window range and the total area of ​​the selected window is calculated to obtain the average radiation heat of the resistors in the selected window.

[0074] Based on the same method, in each reference window of the resistor to be analyzed, all resistors in the corresponding reference window of the resistor to be analyzed are illuminated by the input voltage V, and then all resistors radiate together to obtain the total radiation heat generated within the reference window range. The ratio of the total radiation heat within the reference window range to the total area of ​​the reference window is calculated to obtain the average radiation heat of the resistor in the reference window.

[0075] Further, an arbitrary reference window is used as an example for explanation, for example, a local window with a side length of l is used as a reference window, and Based on the difference between the average radiant heat of the resistor to be analyzed in the selected window and the average radiant heat of the resistor in each reference window, a first difference factor corresponding to each reference window is determined.

[0076] As a specific example, when the input voltage is V, the first difference factor of the resistance to be analyzed corresponding to any reference window under the selected window can be expressed as: ,in represents the first difference factor of the i-th resistor in the local window with a side length of n and the reference window with a side length of l when the input voltage is V; It represents the total heat radiated by the i-th resistor in the local window with a side length of n when the input voltage is V, that is, the total heat radiated by the resistor to be analyzed in the selected window when the input voltage is V; n represents the side length of the selected window, Indicates the total area of ​​the selected window; It represents the total heat radiated by the i-th resistor in the local window with a side length of l when the input voltage is V, that is, the total heat radiated by the resistor to be analyzed in the reference window when the input voltage is V. l represents the side length of any reference window. Represents the total area of ​​any reference window.

[0077] For input voltage V, is the average radiant heat of the resistor to be analyzed within the selected window, The average radiant heat of the resistor to be selected within the reference window, the first difference factor It reflects the difference in average radiant heat under the same input voltage when resistors in local windows of different sizes are lit.

[0078] Step S203 : determining a second difference factor corresponding to each reference window based on a difference between an average radiation area of ​​the resistor to be analyzed in the selected window and an average radiation area of ​​the resistor in each reference window.

[0079] Secondly, the differences in radiation conditions in terms of radiation area when the resistors of local windows of different sizes are lit are analyzed.

[0080] After all the resistors in the selected window of the resistor to be analyzed are illuminated by the input voltage V, the radiation of all the resistors together can generate the total radiation area of ​​the resistor to be analyzed under the corresponding selected window. Based on this, when all the resistors in the selected window of the resistor to be analyzed are illuminated by any input voltage V, the ratio between the total radiation area and the total area of ​​the selected window is calculated to obtain the average radiation area of ​​the resistors in the selected window.

[0081] Based on the same method, in each reference window of the resistor to be analyzed, all resistors in the corresponding reference window of the resistor to be analyzed are illuminated by the input voltage V, and then the common radiation effect of all resistors can generate a total radiation area under the corresponding reference window. The ratio between the total radiation area corresponding to the reference window and the total area of ​​the reference window is calculated to obtain the average radiation area of ​​the resistor in the reference window.

[0082] Further, an arbitrary reference window is used as an example for explanation, for example, a local window with a side length of l is used as a reference window, and Based on the difference between the average radiation area of ​​the resistor to be analyzed in the selected window and the average radiation area of ​​the resistor in each reference window, a second difference factor corresponding to each reference window is determined.

[0083] As a specific example, when the input voltage is V, the second difference factor of the resistance to be analyzed corresponding to any reference window under the selected window can be expressed as: ,in It represents the second difference factor of the i-th resistor in the local window with side length n and the reference window with side length l when the input voltage is V. It represents the total radiation area of ​​the i-th resistor in the local window with a side length of n when the input voltage is V, that is, the total radiation area of ​​the resistor to be analyzed under the selected window when the input voltage is V; n represents the side length of the selected window, Indicates the total area of ​​the selected window; It represents the total radiation area of ​​the i-th resistor in the local window with a side length of l when the input voltage is V, that is, the total radiation area of ​​the resistor to be analyzed under the reference window when the input voltage is V. l represents the side length of any reference window. Represents the total area of ​​any reference window.

[0084] is the average radiation area of ​​the resistor to be analyzed within the selected window, is the average radiation area of ​​the resistor to be selected within the reference window, and the second difference factor It reflects the difference between the average radiation areas under the same input voltage when resistors in local windows of different sizes are lit.

[0085] Step S204, obtaining the noise level performance of the resistor to be analyzed under the selected window and the input voltage according to the data distribution of the first difference factor and the second difference factor corresponding to all reference windows.

[0086] Combined with the differences in the radiation conditions in the two aspects, it is analyzed whether local windows of different sizes have the same difference change trend in the radiation area and radiation heat. The radiation difference between the selected window and other reference windows of different sizes is comprehensively considered to quantitatively characterize the influence of noise on the resistor to be analyzed under the selected window.

[0087] Specifically, the ratio of the first difference factor and the second difference factor corresponding to each reference window is used as the data difference degree of each reference window. For the resistor to be analyzed, the first difference factor reflects the difference in average radiation heat between the selected window and the reference windows of different sizes, and the second difference factor reflects the difference in average radiation area between the selected window and the reference windows of different sizes. The larger the ratio between the two, the greater the difference in radiation heat of the resistor between the local windows of different sizes corresponding to the selected window and the reference window is relative to the difference in radiation area, which further indicates that the influence of noise on radiation heat is more significant, that is, noise causes greater changes under windows of different sizes, reflecting that the influence of window noise is stronger, that is, the corresponding data difference degree value is also larger.

[0088] The smaller the ratio between the two, it means that the changes in the resistance radiation heat difference and the radiation area difference between the selected window and the reference window corresponding to the local windows of different sizes are closer, the noise performance in the window is more stable, and the impact of noise is less significant with the change of window size.

[0089] Further, if the data difference degree of the reference window is less than a preset difference threshold, the value of the data difference coefficient of the reference window is set to a preset value; if the data difference degree of the reference window is greater than or equal to the preset difference threshold, the data difference degree is used as the data difference coefficient of the reference window, and the data difference coefficient is greater than the preset value. In this embodiment, the value of the preset value is 0, and the value of the difference threshold is 0, which can be set by the implementer according to the specific implementation scenario.

[0090] Specifically, for any reference window, when the data difference degree of the reference window This indicates that the changing trends of the differences in average radiation heat and average radiation area of ​​the resistor to be analyzed in the selected window and the reference window are the same, that is, the size change of the local window at this time is more consistent in the difference in the two radiation information, and then directly taking the degree of data difference as the data difference coefficient can better characterize the influence and performance of noise under the current size change.

[0091] When the data difference of the reference window When , it means that the changing trends of the radiation differences in the average radiation heat and the average radiation area of ​​the resistance to be analyzed in the selected window and the reference window are different, that is, two different changing trends may appear at this time. The first is that as the size of the local window changes, the radiation difference in the average radiation heat increases, while the radiation difference in the average radiation area decreases. The second is that as the size of the local window changes, the radiation difference in the average radiation heat decreases, while the radiation difference in the average radiation area increases. The difference performance of the two radiation information is relatively inconsistent, and the noise situation in this case is not analyzed, and then the data difference coefficient at this time is obtained by assignment, and the value of the data difference coefficient is relatively small.

[0092] The data difference coefficient reflects the consistency of the changing trend of the radiation information difference between the two windows of different sizes corresponding to the reference window and the selected window, and further characterizes the performance of the noise level when the corresponding window size changes.

[0093] Finally, the data difference coefficients of all reference windows are combined to obtain the noise level performance of the resistor to be analyzed under the selected window and the input voltage. In this embodiment, the combination is performed in a summation manner, that is, when the input voltage is V, the cumulative sum of the data difference coefficients of all corresponding reference windows is calculated to obtain the noise level performance of the resistor to be analyzed under the selected window and the input voltage V.

[0094] The noise level performance reflects the degree of consistency of the changing trend of the radiation information difference in two aspects between the resistor to be analyzed and other reference windows of different sizes under the selected window as the window size changes, and further characterizes the situation of the influence of noise when the resistor in the selected window of the resistor to be analyzed is illuminated by the input voltage V, that is, the degree of noise performance. The larger the value of the noise level performance, the greater the noise performance of the resistor illuminated in the corresponding range of the selected window, and the smaller the value of the noise level performance, the smaller the noise performance of the resistor illuminated in the corresponding range of the selected window.

[0095] Step S300, analyzing the noise proportion according to the noise level performance of each resistor at each size and different input voltages, and comprehensively analyzing the radiation of all resistors in the local window corresponding to all input voltages and each size, to obtain the preferred degree of the local window corresponding to each size.

[0096] A noise level performance characterizes the noise performance of a selected resistor to be analyzed under a certain size and a fixed input voltage. Considering that there will be certain interference between resistors in different local windows under different sizes, in the process of correcting the non-uniformity of the resistor array using the sparse network method, the lighting of the resistors under different voltages will be adjusted synchronously, and as the local window increases, the quality of the non-uniformity correction will be affected. Therefore, when evaluating the effect of the non-uniformity correction of the local window corresponding to each size, it is necessary to combine the data changes under different voltages and the noise performance of all resistors, so as to better quantify the judgment result of the optimal local window size.

[0097] Based on this, we first analyze the signal-to-noise ratio performance of the radiation information of a single resistor under the local window and input voltage, and then combine the comprehensive performance of all resistors under different input voltages to determine the quality of the non-uniformity correction operation of the local window corresponding to each size. Figure 4 As shown, the method for obtaining the preference degree of the local window corresponding to each size can be implemented by step S301 and step S302.

[0098] Step S301, obtaining the radiation signal-to-noise ratio of the resistor to be analyzed under the selected window and the input voltage according to the total radiation heat and the total radiation area of ​​the resistor to be analyzed within the selected window range and in combination with the noise level performance.

[0099] The radiation signal-to-noise ratio reflects the ratio of the heat radiated by the resistor in a local window of the electric quantity to the noise. The larger the value, the higher the quality of the heat radiated when the resistor in the local window is lit, and the less affected by the noise. The smaller the value, the lower the quality of the heat radiated when the resistor in the local window of the electric quantity is, and the greater the impact of the noise.

[0100] Specifically, for any input voltage, the product of the noise level performance and the total radiation area of ​​the resistor to be analyzed under the selected window and input voltage is calculated, and the ratio of the total radiation heat of the resistor to be analyzed within the selected window range to the product is used as the radiation signal-to-noise ratio.

[0101] As a specific example, this embodiment takes any resistor as an example to illustrate, and analyzes the radiation signal-to-noise ratio in the selected window when the input voltage is V. The calculation formula of the radiation signal-to-noise ratio can be expressed as ,in, It represents the radiation signal-to-noise ratio of the i-th resistor in the local window with a side length of n when the input voltage is V, that is, the radiation signal-to-noise ratio of the resistor to be analyzed in the selected window when the input voltage is V; It indicates the noise level performance of the i-th resistor in a local window with a side length of n when the input voltage is V, that is, the noise level performance of the resistor to be analyzed in the selected window when the input voltage is V; It represents the total heat radiated by the i-th resistor in the local window with a side length of n when the input voltage is V, that is, the total heat radiated by the resistor to be analyzed in the selected window when the input voltage is V; It represents the total radiation area of ​​the i-th resistor in the local window with a side length of n when the input voltage is V, that is, the total radiation area of ​​the resistor to be analyzed under the selected window when the input voltage is V.

[0102] It reflects the radiation information affected by noise, and the radiation signal-to-noise ratio reflects the proportional distribution between the actual radiation information and the noise radiation information.

[0103] Step S302, obtaining the degree of preference of the selected window according to the radiation signal-to-noise ratio of all resistors in the selected window and under all input voltages, combined with the average radiation area of ​​all resistors in the selected window under all input voltages.

[0104] As the range of resistor lighting increases, the overlapping area between the resistor radiation ranges increases, and the unit radiation area will be relatively reduced. However, due to the large number of covered resistors, the impact of noise is relatively shared, and the radiation of a single resistor may be more stable, and the radiation signal-to-noise ratio of a single resistor will be relatively increased. Based on this, combined with two considerations, namely the distribution of the radiation signal-to-noise ratio of the resistor within the lighting range and the distribution of the average radiation area, the degree of preference of the local window corresponding to the resistor lighting range is evaluated for data with different input voltages and resistances.

[0105] Specifically, under any input voltage, the product of the average radiation area of ​​each resistor in the grid in the selected window and the radiation signal-to-noise ratio is used as the effect evaluation index of each resistor in the selected window and any input voltage; for the selected window, the effect evaluation indexes corresponding to all resistors under all input voltages are accumulated to obtain the preferred degree of the selected window.

[0106] As a specific example, taking a local window of any size as an example, the preference of the local window with a side length of n, that is, the preference of the selected window, can be expressed as:

[0107] ;

[0108] in, Indicates the preference of the local window with a side length of n, that is, the preference of the selected window; Indicates the minimum input voltage for correction operation. represents the maximum input voltage during the calibration operation, M represents the total number of resistors in the resistor array, It represents the radiation signal-to-noise ratio of the i-th resistor in the local window with a side length of n when the input voltage is V, that is, the radiation signal-to-noise ratio of the resistor to be analyzed in the selected window when the input voltage is V; It represents the total radiation area of ​​the i-th resistor in the local window with a side length of n when the input voltage is V, that is, the total radiation area of ​​the resistor to be analyzed under the selected window when the input voltage is V; n represents the side length of the selected window, Indicates the total area of ​​the selected window.

[0109] It reflects the ratio of radiation information to noise information of the lighting resistor within the selected window range. It reflects the average radiation area of ​​the lighting resistor within the selected window range, and comprehensively analyzes the characteristic distribution of these two aspects and uses the effect evaluation index The quality of the lighting resistors within the selected window range is jointly evaluated. That is, the degree of optimization characterizes the optimization of using a local window of corresponding size to correct the non-uniformity of the resistor array. The larger the value, the better the corresponding correction effect will be when the local window of corresponding size fully considers the coupling between resistors under different grids and the lower the noise impact. The smaller the value, the worse the dynamic measurement result of the local window of corresponding size and the change of the radiation area, and the worse the corresponding correction effect.

[0110] Step S400, using the optimization degree to select the best local window, based on the best local window, using the sparse grid method to correct the uniformity of the resistors in the resistor array, and completing the temperature compensation of the resistor array infrared imaging.

[0111] This embodiment considers lighting up the resistors in the corresponding range of local windows of different sizes within each grid. Through the degree of preference corresponding to local windows of different sizes, the preferred situation when lighting up the resistors in the corresponding range can be intuitively quantified, and the size of the local window with the best effect can be screened out based on this. The local window corresponding to the best size also represents the best range for lighting up the resistors, which can not only improve the effect of non-uniformity correction, but also reduce the accumulation of errors, making infrared imaging more stable and reliable.

[0112] Specifically, the local window of the size corresponding to the maximum value of the preferred degree is taken as the optimal local window. Further, the optimal local window characterizes the optimal range of the lighting resistors when the resistor array is corrected for non-uniformity using the sparse grid method. Using the sparse grid method, the resistors in the resistor array are corrected for uniformity by lighting the resistors in the optimal local window corresponding to each resistor, thereby completing the temperature compensation of the infrared imaging of the resistor array. It should be noted that the use of the sparse grid method to correct the uniformity of the resistors in the resistor array is a well-known technology and will not be introduced in detail here.

[0113] Furthermore, after obtaining the optimal local window, the noise level performance of each resistor in the corresponding optimal local window can be combined to eliminate the noise influence on the resistor and correct the radiation information of a single resistor, so as to make the infrared imaging result using the resistor array more accurate.

[0114] In this embodiment, the infrared radiation value is adjusted according to the radiation intensity distribution of each resistor in each grid under the input voltage in the optimal local window and the noise level performance to obtain the adjusted radiation value of each resistor in each grid.

[0115] Specifically, for any input voltage, the product of the corresponding noise level performance of each resistor in the grid under the optimal local window and the total radiation area is used as the noise characteristic factor; the difference between the infrared radiation value of each resistor under the optimal local window and the noise characteristic factor is used as the adjusted radiation value of each resistor.

[0116] As a specific example, let the side length of the optimal local window be When the input voltage is V, the adjusted radiation value of the i-th resistor under the optimal local window is ,in, It means that when the input voltage is V, the i-th resistor has a side length of Adjust the radiation value within the local window of It means that when the input voltage is V, the i-th resistor has a side length of The infrared radiation value within the local window, It means that when the input voltage is V, the i-th resistor has a side length of The noise level under the local window is expressed as follows: It means that when the input voltage is V, the i-th resistor has a side length of The total radiation area within the local window.

[0117] The radiation information affected by noise can be represented by eliminating the radiation information affected by noise from the infrared radiation value of a single resistor under the input voltage V corresponding to the original radiation information to correct the influence of the noise, making the infrared radiation signal more accurate, and thus making the infrared simulation result more accurate.

[0118] Finally, based on the adjusted radiation value and the optimal local window, the uniformity correction of the resistors in the resistor array is performed using the sparse grid method. That is, according to the adjusted radiation value of each resistor at each input voltage, the resistors in the optimal local window corresponding to the resistors in each grid are illuminated, and the non-uniformity correction operation is performed using the sparse grid method, which will not be described in detail here.

[0119] like Figure 5 As shown, a temperature compensation system for resistor array infrared imaging is provided, the system comprising:

[0120] A data preprocessing module is used to divide the resistor array into grids, and obtain local windows in each grid where resistors of different sizes are lit, wherein the input voltages of all resistors in the resistor array are the same;

[0121] A noise analysis module is used to obtain the noise level performance of each resistor at each size and each input voltage based on the radiation intensity distribution and radiation area distribution of each resistor in each grid under the input voltage in the local window corresponding to each size, combined with the data difference of each resistor in the local window corresponding to each size and other sizes;

[0122] The optimization analysis module is used to analyze the noise proportion according to the noise level performance of each resistor under each size and different input voltages, and comprehensively analyze the radiation conditions of all resistors in the local window corresponding to each size to obtain the optimization degree of the local window corresponding to each size;

[0123] The data correction module is used to select the best local window by using the optimization degree, and based on the best local window, use the sparse grid method to correct the uniformity of the resistors in the resistor array to complete the temperature compensation of the infrared imaging of the resistor array.

[0124] It should be noted that the system provided in the above embodiment is only illustrated by the division of the above functional modules. In actual applications, the above functions can be assigned to different functional modules as needed, that is, the internal structure of the computer device is divided into different functional modules to complete all or part of the functions described above. In addition, the temperature compensation system of the resistor array infrared imaging provided in the above embodiment and the temperature compensation method embodiment of the resistor array infrared imaging belong to the same concept. The specific implementation process is detailed in the method embodiment and will not be repeated here.

[0125] The present application also provides a computer device. Figure 6 , which shows a schematic diagram of the structure of a computer device provided by an embodiment of the present invention, the computer device includes a memory 601, a processor 602, and a computer program 603 stored in the memory 601 and running on the processor 602, wherein when the processor 602 executes the computer program 603, the computer device can execute any of the temperature compensation methods for resistor array infrared imaging introduced above.

[0126] An embodiment of the present application also provides a computer program product. When the computer program product is run on a computer device, the computer device can execute any one of the temperature compensation methods for resistor array infrared imaging described above.

[0127] An embodiment of the present application also provides a computer-readable storage medium, in which a computer program code is stored. When the computer program code is executed on a computer device, the computer device can execute any one of the temperature compensation methods for resistor array infrared imaging described above.

[0128] In the embodiments provided in the present application, it should be understood that the provided computer device, computer program product and computer-readable storage medium are all used to execute the corresponding methods provided above. Therefore, the beneficial effects that can be achieved can refer to the beneficial effects in the methods provided above and will not be repeated here.

[0129] The embodiments described above are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, a person skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. Such modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application, and should all be included in the protection scope of the present application.

Claims

1. A temperature compensation method for resistor array infrared imaging, characterized in that: The method comprises the following steps: The resistor array is divided into grids, and local windows of lightened resistors of different sizes are obtained in each grid, wherein the input voltages of all resistors in the resistor array are the same; According to the radiation intensity distribution and radiation area distribution of each resistor in each grid under the input voltage in the local window corresponding to each size, combined with the data difference of each resistor in the local window corresponding to each size and other sizes, the noise level performance of each resistor under each size and each input voltage is obtained; The noise ratio is analyzed based on the noise performance of each resistor at each size and different input voltages, and the radiation of all resistors in the local window corresponding to all input voltages and each size is combined to obtain the optimization degree of the local window corresponding to each size; The optimal local window is screened out using the optimization degree, and based on the optimal local window, the resistors in the resistor array are corrected for uniformity using a sparse grid method to complete temperature compensation of infrared imaging of the resistor array; The noise level performance of each resistor at each size and each input voltage is obtained according to the radiation intensity distribution and radiation area distribution of each resistor in each grid under the input voltage in the local window corresponding to each size, combined with the data difference of each resistor in the local window corresponding to each size and other sizes, specifically including: Any resistor in all grids in the resistor array is used as the resistor to be analyzed, a local window corresponding to any size is used as the selected window, and local windows corresponding to other sizes except the selected window are used as reference windows; For any input voltage: Determine a first difference factor corresponding to each reference window based on a difference between an average radiation heat of the resistor to be analyzed in the selected window and an average radiation heat of the resistor in each reference window; Determine a second difference factor corresponding to each reference window based on a difference between an average radiation area of ​​the resistance to be analyzed in the selected window and an average radiation area of ​​the resistance in each reference window; According to the data distribution of the first difference factor and the second difference factor corresponding to all reference windows, the noise level performance of the resistance to be analyzed under the selected window and the input voltage is obtained, specifically including: The ratio of the first difference factor and the second difference factor corresponding to each reference window is used as the data difference degree of each reference window; if the data difference degree of the reference window is less than a preset difference threshold, the value of the data difference coefficient of the reference window is set to a preset value; if the data difference degree of the reference window is greater than or equal to the preset difference threshold, the data difference degree is used as the data difference coefficient of the reference window, and the data difference coefficient is greater than the preset value; the data difference coefficients of all reference windows are combined to obtain the noise level performance of the resistance to be analyzed under the selected window and the input voltage; The method for obtaining the average radiant heat of the resistor in the selected window is specifically as follows: When all the resistors to be analyzed within the selected window are illuminated by any one of the input voltages, the ratio between the total radiated heat within the selected window and the total area of ​​the selected window is calculated to obtain the average radiated heat of the resistors within the selected window; The method for obtaining the average radiation area of ​​the resistor in the selected window is specifically as follows: When all the resistors to be analyzed in the selected window are illuminated by any one of the input voltages, the ratio between the total radiation area and the total area of ​​the selected window is calculated to obtain the average radiation area of ​​the resistors in the selected window; The noise ratio is analyzed according to the noise performance of each resistor at each size and different input voltages, and the radiation of all resistors in the local window corresponding to all input voltages and each size is comprehensively considered to obtain the optimization degree of the local window corresponding to each size, specifically including: According to the total radiation heat and the total radiation area of ​​the resistor to be analyzed within the selected window range, combined with the noise level performance, the radiation signal-to-noise ratio of the resistor to be analyzed under the selected window and the input voltage is obtained, specifically including: for any input voltage, calculating the product of the noise level performance and the total radiation area of ​​the resistor to be analyzed under the selected window and the input voltage, and taking the ratio of the total radiation heat of the resistor to be analyzed within the selected window range to the product as the radiation signal-to-noise ratio; According to the radiation signal-to-noise ratio of all resistors in the selected window and all input voltages, combined with the average radiation area of ​​all resistors in the selected window under all input voltages, the preferred degree of the selected window is obtained, specifically including: under any input voltage, taking the product of the average radiation area of ​​each resistor in the grid in the selected window and the radiation signal-to-noise ratio as the effect evaluation index of each resistor under the selected window and any input voltage; for the selected window, accumulating the effect evaluation indicators corresponding to all resistors under all input voltages to obtain the preferred degree of the selected window.

2. The temperature compensation method for resistor array infrared imaging according to claim 1, characterized in that: The method further comprises: According to the radiation intensity distribution of each resistor in each grid under the input voltage in the optimal local window and the noise level performance, the infrared radiation value is adjusted to obtain the adjusted radiation value of each resistor in each grid; Based on the adjusted radiation value and the optimal local window, the uniformity of the resistors in the resistor array is corrected using a sparse grid method.

3. The temperature compensation method for resistor array infrared imaging according to claim 2, characterized in that: The method for obtaining the adjusted radiation value is specifically as follows: For any input voltage, the product of the corresponding noise level performance of each resistor in the grid under the optimal local window and the total radiation area is taken as the noise characteristic factor; The difference between the infrared radiation value of each resistor in the optimal local window and the noise characteristic factor is used as the adjusted radiation value of each resistor.

4. The temperature compensation method for resistor array infrared imaging according to claim 1, characterized in that: The step of selecting the best local window by using the optimization degree specifically includes: The local window with the size corresponding to the maximum value of the preference degree is taken as the optimal local window.

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