Gluing and developing method and gluing and developing system

Abstract

The invention relates to the field of gluing and developing, and provides a gluing and developing method and a gluing and developing system.The method is applied to the gluing and developing system.The method comprises the steps that a wafer is conveyed into a film covering unit, and the back face of the wafer is coated with a smooth film layer so that the smoothness of the back face of the wafer can be increased; transferring the wafer of which the back surface is coated with the smooth film layer into a gluing unit, and controlling the gluing unit to coat a photoresist layer on the front surface of the wafer, so that the photoresist layer to be exposed is attached to the front surface of the wafer; conveying the wafer of which the front surface is coated with the photoresist layer into a back washing unit, and controlling a brush in the back washing unit to move so as to clean the lower surface of the smooth film layer; the lower surface is a surface deviating from the wafer; and feeding the wafer of which the lower surface of the smooth film layer is cleaned into an exposure system, and carrying out exposure treatment on the wafer by the exposure system. The method is used for enabling the smooth film layer on the back surface of the wafer to effectively reduce the friction force when the bearing table of the photoetching machine adsorbs the wafer.

Description

Technical Field

[0001] The invention relates to the field of glue coating development, in particular to a glue coating development method and a glue coating development system. Background Art

[0002] In the related art, before the wafer enters the photolithography machine, the back of the wafer will be contaminated by particles in the previous process, and the particles on the back of the wafer will increase the friction of the wafer on the workbench of the photolithography machine, which will reduce the positioning accuracy of the wafer on the workbench of the photolithography machine, increase the overlay error, and increase the maintenance cost and maintenance time of the workbench of the photolithography machine. Therefore, a glue coating and development method and a glue coating and development system are urgently needed to improve the above problems. Summary of the invention

[0003] The object of the present invention is to provide a glue coating and developing method and a glue coating and developing system, which are used to make the smooth film layer on the back of the wafer effectively reduce the friction force when the photolithography machine carrier adsorbs the wafer.

[0004] In a first aspect, the present invention provides a method for coating and developing, which is applied to a coating and developing system, comprising: transferring a wafer to a coating unit, coating a smooth film layer on the back side of the wafer to increase the smoothness of the back side of the wafer; transferring the wafer with the smooth film layer coated on the back side to the coating unit, controlling the coating unit to coat a photoresist layer on the front side of the wafer, so that the front side of the wafer is attached with a photoresist layer to be exposed; transferring the wafer with the photoresist layer coated on the front side to a back washing unit, controlling the movement of a brush in the back washing unit to clean the lower surface of the smooth film layer; the lower surface is the surface away from the wafer; transferring the wafer with the lower surface of the smooth film layer cleaned to an exposure system, and waiting for the exposure system to expose the wafer.

[0005] Optionally, the hardness of the brush is lower than the hardness of the smooth film layer, and the hardness of the brush is lower than the hardness of the wafer.

[0006] Optionally, the wafer is transferred to a coating unit and a smooth film layer is coated on the back side of the wafer, including: placing the wafer into the chamber of the coating unit so that the back side of the wafer is exposed to the inner space of the chamber, and introducing coating steam into the inner space of the chamber; when the coating steam contacts and adsorbs on the back side of the wafer, the smooth film layer is formed.

[0007] Optionally, after coating the smooth film layer on the back side of the wafer, the method further includes: heat treating the wafer to raise the temperature of the wafer to a first temperature so as to shape the smooth film layer on the back side of the wafer.

[0008] Optionally, after coating the photoresist layer on the front side of the wafer, the method further includes: controlling the soft baking unit to heat the wafer so that the wafer is heated to a second temperature; the second temperature is lower than the first temperature.

[0009] Optionally, it also includes: transferring the wafer that has been exposed to a developing unit, coating the wafer with a developing solution so that the photoresist layer forms a mask pattern; transferring the wafer with the mask pattern formed to a soft baking unit, baking and finalizing the photoresist layer with the mask pattern; transferring the wafer with the photoresist layer baked and finalized to a film removal unit, removing the smooth film layer on the back of the wafer.

[0010] Optionally, the method further includes: sending the wafer after the smooth film layer is removed into a detection unit, controlling the detection unit to perform optical detection on the surface of the wafer to obtain detection information; the detection information is used to determine whether the wafer is a good product or a defective product.

[0011] Optionally, a workbench is provided in the exposure system, and the workbench positions the wafer by electrostatic adsorption; the smooth film layer is set to an insulating material to inhibit charge accumulation on the back side of the wafer, so as to slow down the oxidation wear of the workbench.

[0012] In a second aspect, the present invention provides a coating and developing system, used for the method described in any one of the first aspects, comprising: a coating unit, a coating unit and a back washing unit; the coating unit is used to coat a smooth film layer on the back side of a wafer to increase the smoothness of the back side of the wafer; the coating unit is used to coat a photoresist layer on the front side of the wafer to allow the front side of the wafer to adhere to the photoresist layer to be exposed; the back washing unit is used to control the movement of a brush to clean the lower surface of the smooth film layer.

[0013] Optionally, it also includes: a developing unit, a soft baking unit and a film stripping unit; the developing unit is used to coat the wafer with a developer so that a partial area of ​​the photoresist layer is dissolved or fixed to the front side of the wafer to form a mask pattern; the soft baking unit is used to bake and finalize the photoresist layer forming the mask pattern; the film stripping unit is used to remove the smooth film layer applied to the back side of the wafer.

[0014] Optionally, it also includes: a glue coating and developing device and an exposure unit; the glue coating and developing device includes a film box module, a liquid treatment module, an interlayer interface tower, and a heat treatment module arranged in sequence in a horizontal direction; the back washing unit and the exposure unit are located on the side of the heat treatment module away from the interlayer interface tower; the interlayer interface tower is used to place wafers that are transferred between the liquid treatment module and the heat treatment module; the exposure unit is used to perform exposure processing on the wafers; the film box module is provided with the coating unit, the film box interface tower and the interlayer robot group; the film box interface tower is used to place wafers coated with a smooth film layer; the interlayer robot group is used to place the wafers in the wafer coating unit The wafer is transferred to the film box interface tower, or the wafer in the film box interface tower is taken out; the liquid processing module is provided with the glue coating unit, the developing unit and the liquid processing robot group; the liquid processing robot group is used to transfer the wafer in the film box interface tower to the glue coating unit, and is also used to transfer the wafer in the glue coating unit to the interlayer interface tower; the heat treatment module is provided with the soft baking unit, the film removal unit and the heat treatment robot group; the heat treatment robot group is used to transfer the wafer to the soft baking unit, and is also used to transfer the wafer in the soft baking unit to the film removal unit, and is also used to take out the wafer in the film removal unit.

[0015] Compared with the prior art, the beneficial effects of the present invention are as follows: by transferring the wafer coated with a photoresist layer on the front side to a back washing unit, the movement of the brush in the back washing unit is controlled to clean the lower surface of the smooth film layer, so that the smooth film layer can effectively reduce the friction force when the photolithography machine carrier adsorbs the wafer, thereby enabling the wafer to smoothly expand during the leveling process, and ultimately achieving extremely small overlay errors; further, by effectively reducing the friction force when the photolithography machine carrier adsorbs the wafer, the wear of the photolithography machine carrier can be reduced, thereby greatly reducing the maintenance cost of the photolithography machine. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 A schematic flow chart of a method for coating and developing a glue provided by the present invention; Figure 2 A cross-sectional schematic diagram of a glue coating and developing system provided by the present invention at a viewing angle opposite to the Z direction; Figure 3 A cross-sectional schematic diagram of a glue coating and developing system provided with an interface tower provided by the present invention in the Y direction; Figure 4 The present invention provides a cross-sectional schematic diagram of a coating and developing system in the Y direction.

[0017] Description of reference numerals in the figures: 100, interlayer module; 200, liquid treatment module; 300, heat treatment module; 400, film box module; 500, interface module; 1. In and out robot; 2. Second layer robot; 3. First layer robot; 4. Film box robot; 11. First liquid processing robot; 12. Second liquid processing robot; 13. Third liquid processing robot; 14. Fourth liquid processing robot; 15. Fifth liquid processing robot; 16. Sixth liquid processing robot; 21. First heat treatment manipulator; 22. Second heat treatment manipulator; 23. Third heat treatment manipulator; 24. Fourth heat treatment manipulator; 25. Fifth heat treatment manipulator; 26. Sixth heat treatment manipulator; 31. Back wash robot; 32. Front wash robot; 33. Interface robot; 41. Laminating unit. DETAILED DESCRIPTION

[0018] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be understood by people with general skills in the field to which the present invention belongs. "Including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0019] In the present invention, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance. The term "plurality" refers to two or more than two, unless otherwise clearly defined.

[0020] In view of the problems existing in the existing technology, such as Figure 1As shown, the first embodiment of the present invention provides a glue coating and developing method, which is applied to a glue coating and developing system, including: transferring a wafer to a coating unit, coating a smooth film layer on the back side of the wafer to increase the smoothness of the back side of the wafer; transferring the wafer with the smooth film layer coated on the back side to the glue coating unit, controlling the glue coating unit to coat a photoresist layer on the front side of the wafer, so that the front side of the wafer is attached with a photoresist layer to be exposed; transferring the wafer with the photoresist layer coated on the front side to a back washing unit, controlling the movement of a brush in the back washing unit to clean the lower surface of the smooth film layer; the lower surface is the surface away from the wafer; transferring the wafer with the lower surface of the smooth film layer cleaned to an exposure system, and waiting for the exposure system to expose the wafer.

[0021] It is worth noting that, in this embodiment, the wafer coated with a photoresist layer on the front is transferred to a back washing unit, and the movement of the brush in the back washing unit is controlled to clean the lower surface of the smooth film layer, so that the smooth film layer can effectively reduce the friction force when the photolithography machine carrier adsorbs the wafer, thereby enabling the wafer to smoothly expand during the leveling process, and ultimately achieving extremely small overlay error; further, by effectively reducing the friction force when the photolithography machine carrier adsorbs the wafer, the wear of the photolithography machine carrier can be reduced, thereby greatly reducing the maintenance cost of the photolithography machine.

[0022] In some embodiments, the hardness of the brush is lower than the hardness of the smooth film layer, and the hardness of the brush is lower than the hardness of the wafer.

[0023] Specifically, the smooth film layer is configured as a hexamethyldisilazane (HMDS) coating, and the hardness of the brush is lower than that of the HMDS coating.

[0024] It is worth noting that the brush material used in the related art is diamond, which will damage the smooth film layer. The present application sets the hardness of the brush to be lower than the hardness of the smooth film layer, so that the smooth film layer will not be damaged when cleaning the back of the wafer.

[0025] In some embodiments, transferring a wafer to a coating unit and coating a smooth film layer on the back side of the wafer comprises: placing the wafer into a chamber of the coating unit, exposing the back side of the wafer to the inner space of the chamber, and introducing coating steam into the inner space of the chamber; when the coating steam contacts and adsorbs on the back side of the wafer, the smooth film layer is formed. Specifically, the coating steam is set to be HMDS steam, and the chamber is set to be a heating chamber.

[0026] It is worth noting that by using HMDS vapor to treat the back of the wafer in a controlled environment, interference from external impurities can be effectively avoided, the cleanliness of the wafer can be maintained, and the risk of wafer contamination can be reduced.

[0027] In some embodiments, after coating the smooth film layer on the back side of the wafer, the method further includes: heat treating the wafer to raise the temperature of the wafer to a first temperature so as to shape the smooth film layer on the back side of the wafer.

[0028] In some embodiments, after a photoresist layer is coated on the front side of the wafer, the method further includes: controlling the soft baking unit to heat the wafer so that the wafer is heated to a second temperature; the second temperature is lower than the first temperature.

[0029] Specifically, the soft baking unit can be set by baking the photoresist layer, which is convenient for subsequent processes. Setting the second temperature lower than the first temperature can prevent the heating temperature of the soft baking unit from exceeding the heating temperature of the coating process, and prevent the smooth film layer from detaching from the back of the wafer due to high temperature.

[0030] In some embodiments, the method further includes: transferring the wafer that has been exposed to a developing unit, coating the wafer with a developing solution so that the photoresist layer forms a mask pattern; transferring the wafer with the mask pattern formed to a soft baking unit, baking and finalizing the photoresist layer with the mask pattern; transferring the wafer with the photoresist layer baked and finalized to a film removal unit, removing the smooth film layer on the back of the wafer.

[0031] Specifically, the photoresist layer is set as a positive photoresist. After exposure, the exposed part will be dissolved by the developer, while the unexposed part will be retained to form a mask pattern.

[0032] In some other specific embodiments, the photoresist layer is configured as a negative photoresist, and after exposure, the unexposed portion will be dissolved by a developer, while the exposed portion will remain to form a mask pattern.

[0033] In some embodiments, the method further includes: sending the wafer after the smooth film layer is removed into a detection unit, controlling the detection unit to perform optical detection on the surface of the wafer to obtain detection information; the detection information is used to determine whether the wafer is a good product or a defective product.

[0034] It is worth noting that this embodiment effectively screens out defective products by optically inspecting the surface of the wafer, thereby preventing defective wafers from entering the subsequent production process or the final market, thereby ensuring the overall quality and reliability of the product.

[0035] In some embodiments, a workbench is provided in the exposure system, and the workbench positions the wafer by electrostatic adsorption; the smooth film layer is set as an insulating material to inhibit charge accumulation on the back side of the wafer, so as to slow down the oxidation wear of the workbench.

[0036] It is worth noting that this embodiment can provide uniform and stable adsorption force through electrostatic adsorption, so that the wafer can maintain a high degree of position stability during the exposure process. Compared with mechanical clamping and other methods, electrostatic adsorption will not leave physical contact marks on the edge of the wafer, reducing the risk of contamination and helping to maintain the cleanliness of the wafer surface. The smooth film layer made of insulating material can effectively isolate the charge exchange between the back of the wafer and the workbench, reduce the corrosion caused by the charge, thereby reducing the oxidation rate of the workbench surface and extending the service life of the workbench.

[0037] like Figure 2 As shown, the second embodiment provides a coating and developing system, which is used for the method described in any one of the first embodiments, including: a coating unit 41, a coating unit and a back washing unit; the coating unit 41 is used to coat a smooth film layer on the back side of the wafer to increase the smoothness of the back side of the wafer; the coating unit is used to coat a photoresist layer on the front side of the wafer so that the front side of the wafer is attached with a photoresist layer to be exposed; the back washing unit is used to control the movement of a brush to clean the lower surface of the smooth film layer.

[0038] It is worth noting that by coating the smooth film layer on the back of the wafer by the coating unit 41, the smoothness of the back of the wafer can be significantly improved, the adhesion of particles can be reduced, and the accuracy and reliability of subsequent processing and detection can be improved. The back washing unit effectively cleans the lower surface of the smooth film layer on the back of the wafer to remove contaminants by controlling the movement of the brush. This not only helps to improve the accuracy of detection, but also prevents contaminants from contaminating the wafer in subsequent processes and improves the reliability of the overall process.

[0039] In some embodiments, it also includes: a developing unit, a soft baking unit and a film stripping unit; the developing unit is used to coat the wafer with a developer so that a partial area of ​​the photoresist layer is dissolved or fixed to the front side of the wafer to form a mask pattern; the soft baking unit is used to bake and finalize the photoresist layer that forms the mask pattern; the film stripping unit is used to remove the smooth film layer applied to the back side of the wafer.

[0040] It is worth noting that, in this embodiment, a film removal unit is provided to effectively remove the smooth film layer on the back of the wafer, thereby ensuring the cleanliness and flatness of the back of the wafer, preventing contaminants from affecting subsequent detection and processing, and improving detection accuracy and process reliability.

[0041] like Figure 2 and Figure 3As shown, in some embodiments, it also includes: a glue coating and developing device and an exposure unit; the glue coating and developing device includes a film box module 400, a liquid treatment module 200, an interlayer interface tower, and a heat treatment module 300 arranged in sequence in a horizontal direction; the back washing unit and the exposure unit are located on the side of the heat treatment module 300 away from the interlayer interface tower; the interlayer interface tower is used to place wafers that are transferred between the liquid treatment module 200 and the heat treatment module 300; the exposure unit is used to perform exposure processing on the wafer; the film box module 400 is provided with the coating unit 41, the film box interface tower and the interlayer robot group; the film box interface tower is used to place the wafer after being coated with a smooth film layer; the interlayer robot group It is used to transfer the wafers in the wafer coating unit 41 to the wafer box interface tower, or to take out the wafers in the wafer box interface tower; the liquid processing module 200 is provided with the gluing unit, the developing unit and the liquid processing robot group; the liquid processing robot group is used to transfer the wafers in the wafer box interface tower to the gluing unit, and is also used to transfer the wafers in the gluing unit to the interlayer interface tower; the heat treatment module 300 is provided with the soft baking unit, the film removal unit and the heat treatment robot group; the heat treatment robot group is used to transfer the wafers to the soft baking unit, and is also used to transfer the wafers in the soft baking unit to the film removal unit, and is also used to take out the wafers in the film removal unit.

[0042] In some specific embodiments, the coating and developing device includes a film box module 400, a liquid treatment module 200, an interlayer module 100, a heat treatment module 300 and an interface module 500 arranged in sequence along the X direction. The film box module includes: an in-and-out station robot 1, a second interlayer robot 2, a first loading interface LP1, a second loading interface LP2, a third loading interface LP3, a fourth loading interface, a first main interface PSI1, a film box interface tower T1, a film box robot 4 and the coating unit. The first loading interface LP1 and the third loading interface LP3 are used to load unprocessed wafers, and the second loading interface LP2 and the fourth loading interface are used to load processed wafers; the in-and-out station robot 1 is used to move the wafers on the film box interface tower T1 to the first main interface PSI1, and is also used to move the wafers on the second loading interface LP2 and the fourth loading interface to the overhead crane. The second interlayer robot 2 is used to transfer the wafers on the first main interface PSI1 to the coating unit. The second interlayer robot 2 is also used to transfer the wafers in the laminating unit to the cassette interface tower T1. The cassette robot 4 is used to transfer the wafers on the overhead crane to the first loading interface; the cassette robot 4 is also used to transfer the wafers on the second loading interface to the overhead crane.

[0043] like Figure 4As shown, in some other specific embodiments, the cassette interface tower T1 has interfaces SCPC1, SCPC2 and SCPC3 of an integrated cooling unit, and the cooling unit is used to cool the wafer. The second interlayer robot 2 is also used to transfer the wafer in the coating unit to the interfaces SCPC1, SCPC2 and SCPC3 of the integrated cooling unit.

[0044] In some further specific embodiments, the cassette interface tower T1 has interfaces PSI21, PSI22 and PSI23, and the inbound and outbound robot 1 is used to transfer wafers on the interfaces PSI21, PSI22 and PSI23 to the second loading interface LP2.

[0045] In some specific embodiments, the second interlayer robot 2 is located on the Y direction side of the film box interface tower T1. The coating unit 41 is located on the Y direction side of the second interlayer robot 2. The first loading interface LP1 is located on the Z direction side of the second loading interface LP2. The X direction, Y direction and Z direction are perpendicular to each other.

[0046] In some embodiments, the interlayer module 100 is configured as the interlayer interface tower T2, including a film feed frame and a film return frame; the film feed frame is provided with interfaces PSI2, PSI3 and PSI4. The film return frame is provided with interfaces SCPC7, SCPC8, SCPC9, and interfaces PSI15, PSI16, PSI17, PSI18, PSI19, PSI20 of the integrated cooling unit.

[0047] In some embodiments, the liquid processing module includes a film feeding liquid processing frame and a film return liquid processing frame; the film feeding liquid processing frame includes a fourth liquid processing robot 14, a fifth liquid processing robot 15, a sixth liquid processing robot 16 and a glue coating unit PR. The film return liquid processing frame includes a first liquid processing robot 11, a second liquid processing robot 12, a third liquid processing robot 13, and a developing unit SDC.

[0048] In some specific embodiments, the third liquid processing robot 13 is used to transfer the wafer on the interface SCPC9 of the integrated cooling unit to the developing unit SDC; the third liquid processing robot 13 is also used to transfer the wafer in the developing unit SDC to the interface PSI19; the third liquid processing robot 13 is also used to transfer the wafer on the interface PSI20 to the interface PSI23.

[0049] In some other specific embodiments, the fourth liquid processing robot 14 is used to transfer the wafers on the interface SCPC1 of the integrated cooling unit to the glue coating unit PR; the fourth liquid processing robot 14 is used to transfer the wafers in the glue coating unit PR to the interface PSI2.

[0050] like Figure 3As shown, the film-input liquid processing frame is configured as frame S4, S5, and S6. The film-return liquid processing frame is configured as frame S1, S2, and S3. A liquid processing manipulator is configured in each liquid processing frame.

[0051] like Figure 4 As shown, in some embodiments, the interface module 500 is provided with a third interface tower T3, a buffer unit BF, a cooling unit CPC, a second main interface PSI11, a backwash robot 31, a front wash robot 32, an interface robot 33 and a backwash unit 51. The third interface tower T3 has interfaces PSI5, PSI6, PSI7, PSI12, PSI13, and PSI14. The backwash robot 31 is used to transfer wafers on interfaces SCPC7, SCPC8, and SCPC9 to the backwash unit 51. The backwash robot 31 is also used to transfer wafers in the backwash unit 51 to the buffer unit BF. The front wash robot 32 is used to transfer wafers in the buffer unit BF to the cooling unit CPC. The interface robot 33 is used to transfer wafers on the cooling unit CPC to the lithography machine SCAN, and the interface robot 33 is also used to transfer wafers in the lithography machine SCAN to the second main interface PSI11. The cleaning robot 32 is also used to transfer the wafers on the second main interface PSI11 to interfaces PSI12, PSI13, and PSI14.

[0052] In some embodiments, the heat treatment module 300 includes a film feeding heat treatment frame and a film returning heat treatment frame. The film feeding heat treatment frame includes a soft bake unit Soft Bake, an edge exposure unit WEE, a fourth heat treatment robot 24, a fifth heat treatment robot 25, and a sixth heat treatment robot 26. The film returning heat treatment frame includes a post-exposure baking unit PEB, a developing unit SDC, a hard bake unit Hard Bake, a film removal unit BRS, an optical defect detection unit AOI, a first heat treatment robot 21, a second heat treatment robot 22, and a third heat treatment robot 23.

[0053] In some specific embodiments, the fourth heat treatment robot 24 is used to transfer the wafers on the interface PSI2 to the soft baking unit Soft Bake; the fourth heat treatment robot 24 is also used to transfer the wafers in the soft baking unit Soft Bake to the edge exposure unit WEE; the fourth heat treatment robot 24 is also used to transfer the wafers in the edge exposure unit WEE to the interface PSI5.

[0054] In other specific embodiments, the third heat treatment robot 23 is used to transfer the wafer on the interface PSI14 to the post-exposure baking unit PEB; the third heat treatment robot 23 is also used to transfer the wafer in the post-exposure baking unit PEB to the interface SCPC9 of the integrated cooling unit; the third heat treatment robot 23 is also used to transfer the wafer on the interface PSI19 to the hard baking unit Hard Bake; the third heat treatment robot 23 is also used to transfer the wafer in the hard baking unit Hard Bake to the film removal unit BRS; the third heat treatment robot 23 is also used to transfer the wafer in the film removal unit BRS to the optical defect detection unit AOI; the third heat treatment robot 23 is also used to transfer the wafer in the optical defect detection unit AOI to the interface PSI20.

[0055] like Figure 3 As shown, the film feeding heat treatment frame is set as frame H4, H5, H6. The film returning heat treatment frame is set as frame H1, H2, H3. A heat treatment manipulator is set in each heat treatment frame.

[0056] Although the embodiments of the present invention are described in detail above, it is obvious to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein may have other embodiments and may be implemented or realized in a variety of ways.

Claims

1. A method for developing a glue coating, applied to a glue coating developing system, characterized in that: include: Transferring the wafer to a coating unit, coating the back side of the wafer with a smooth film layer to increase the smoothness of the back side of the wafer; The wafer with the smooth film layer coated on the back is transferred to a glue coating unit, and the glue coating unit is controlled to coat a photoresist layer on the front side of the wafer, so that the photoresist layer to be exposed is attached to the front side of the wafer; The wafer coated with the photoresist layer on the front side is transferred to a backwash unit, and the brush in the backwash unit is controlled to move to clean the lower surface of the smooth film layer; the lower surface is the surface away from the wafer; The wafer whose lower surface of the smooth film layer is cleaned is sent to the exposure system, and the exposure system performs exposure processing on the wafer.

2. The method according to claim 1, characterized in that The hardness of the brush is lower than the hardness of the smooth film layer, and the hardness of the brush is lower than the hardness of the wafer.

3. The method according to claim 1, characterized in that The wafer is transferred to a coating unit, and a smooth film layer is coated on the back side of the wafer, including: The wafer is placed in the chamber of the coating unit so that the back side of the wafer is exposed to the inner space of the chamber, and coating steam is introduced into the inner space of the chamber; when the coating steam contacts and adsorbs on the back side of the wafer, the smooth film layer is formed.

4. The method according to claim 3, characterized in that: After coating the smooth film layer on the back side of the wafer, the method further comprises: The wafer is subjected to a heat treatment to raise the temperature of the wafer to a first temperature so as to shape the smooth film layer on the back side of the wafer.

5. The method according to claim 4, characterized in that After coating a photoresist layer on the front side of the wafer, the method further comprises: The soft baking unit is controlled to heat the wafer so that the wafer is heated to a second temperature; the second temperature is lower than the first temperature.

6. The method according to claim 4, characterized in that Also includes: The wafer after exposure is transferred to a developing unit, and a developer is applied to the wafer to form a mask pattern on the photoresist layer; The wafer with the mask pattern formed thereon is transferred to a soft baking unit to bake and finalize the photoresist layer with the mask pattern formed thereon; The wafer after the photoresist layer is baked and finalized is transferred to a film removal unit to remove the smooth film layer on the back side of the wafer.

7. The method according to claim 6, characterized in that Also includes: Sending the wafer after the smooth film layer is removed into the detection unit, and controlling the detection unit to perform optical detection on the surface of the wafer to obtain detection information; The detection information is used to determine whether the wafer is a good product or a defective product.

8. The method according to claim 1, characterized in that A workbench is provided in the exposure system, and the workbench positions the wafer by electrostatic adsorption; The smooth film layer is configured as an insulating material to suppress charge accumulation on the back side of the wafer and to slow down oxidation wear of the workbench.

9. A coating and developing system, used in the method according to any one of claims 1 to 8, characterized in that: include: Laminating unit, gluing unit and back washing unit; The coating unit is used to coat a smooth film layer on the back side of the wafer to increase the smoothness of the back side of the wafer; The coating unit is used to coat a photoresist layer on the front side of the wafer so that the photoresist layer to be exposed is attached to the front side of the wafer; The backwash unit is used to control the movement of the brush to clean the lower surface of the smooth film layer.

10. The system according to claim 9, characterized in that Also includes: Developing unit, soft baking unit and film removal unit; The developing unit is used to apply a developing solution to the wafer so that a partial area of ​​the photoresist layer is dissolved or fixed to the front side of the wafer to form a mask pattern; The soft baking unit is used to bake and finalize the photoresist layer forming the mask pattern; The film removal unit is used to remove the smooth film layer coated on the back side of the wafer.

11. The system according to claim 10, characterized in that Also includes: Gluing and developing equipment and exposure units; The coating and developing device comprises a film box module, a liquid treatment module, an interlayer interface tower, and a heat treatment module which are arranged in sequence in a horizontal direction; the backwash unit and the exposure unit are located on a side of the heat treatment module away from the interlayer interface tower; the interlayer interface tower is used to place wafers to be transferred between the liquid treatment module and the heat treatment module; the exposure unit is used to perform exposure processing on the wafer; The film box module is provided with the coating unit, the film box interface tower and the interlayer robot group; the film box interface tower is used to place the wafer coated with a smooth film layer; the interlayer robot group is used to transfer the wafer in the wafer coating unit to the film box interface tower, or take out the wafer in the film box interface tower; The liquid processing module is provided with the glue coating unit, the developing unit and the liquid processing robot group; the liquid processing robot group is used to transfer the wafers in the cassette interface tower to the glue coating unit, and is also used to transfer the wafers in the glue coating unit to the interlayer interface tower; The heat treatment module is provided with the soft baking unit, the film removal unit and the heat treatment robot group; the heat treatment robot group is used to transfer the wafer to the soft baking unit, and is also used to transfer the wafer in the soft baking unit to the film removal unit, and is also used to take out the wafer in the film removal unit.

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