Gluing and developing system and wafer processing method

Abstract

The invention provides a gluing and developing system. The gluing and developing system comprises cleaning equipment and gluing and developing equipment, the cleaning equipment is used for cleaning the wafer; the gluing and developing device comprises a gluing unit, a film covering unit, a developing unit and a film removing unit; the gluing unit is used for carrying out photoresist coating process treatment on the wafer cleaned by the cleaning equipment; the film coating unit is used for coating a smooth film layer on the back surface of the wafer so as to increase the smoothness of the back surface of the wafer; the developing unit is used for performing developing process treatment on the exposed wafer; and the film removing unit is used for removing the smooth film layer on the back surface of the wafer. By arranging the cleaning equipment, the wafer is cleaned before entering the gluing and developing equipment, so that pollutant particles which are deposited and etched on the back surface of the wafer in the preorder can be effectively removed. The film coating unit is arranged in the gluing and developing system, so that the back surface of the wafer can be coated with a smooth film layer. The smooth film layer can effectively reduce the friction force when the bearing table of the photoetching machine adsorbs the wafer, so that the overall service life of the photoetching machine is prolonged.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer processing equipment and wafer processing methods, and in particular to a glue coating and developing system and a wafer processing method. Background Art

[0002] In wafer manufacturing, the coating and developing equipment is a key processing equipment in the integrated circuit chip manufacturing process. It is often operated online with the photolithography machine to complete the wafer photoresist coating, curing, post-exposure baking, developing, hardening and other processes. The quality of its architecture design directly affects the equipment's production capacity, stability, operation and maintenance convenience, and cost control.

[0003] In the chip manufacturing process, keeping the back of the wafer clean is very important for the photolithography process. When the back of the wafer is contaminated by particles, it will wear the carrier of the photolithography machine, thereby increasing the maintenance cost and maintenance time of the photolithography machine, and seriously reducing the chip yield. Therefore, how to improve the cleanliness of the wafer back before photolithography is an important process. The commonly used method at present is to set a back washing unit inside the coating and developing equipment to clean the wafer back before the photolithography process. The cleaning tool usually adopts diamond grinding + physical cleaning, which can not only clean up the particles generated by the previous process in the coating and developing equipment, but also clean up the wafer back particles left by the previous equipment of the coating and developing equipment. However, diamond grinding will cause problems on the surface of the wafer back, such as local scratches and flatness changes, which will also damage the wafer and reduce the chip yield. Summary of the invention

[0004] The purpose of the present invention is to propose a coating and developing system and a wafer processing method to solve the technical problem of how to reduce pollutants on the wafer surface, thereby reducing the friction force when the photolithography machine carrier adsorbs the wafer, thereby reducing the wear of the photolithography machine carrier.

[0005] To achieve the above-mentioned purpose, the first aspect of the present invention provides a gumming and developing system, comprising: a cleaning device and a gumming and developing device; The cleaning equipment is used to clean the wafer; The glue coating and developing device comprises: A coating unit, used for performing a photoresist coating process on the wafer cleaned by the cleaning device; A coating unit, the coating unit is used to coat a smooth film layer on the back side of the wafer to increase the smoothness of the back side of the wafer; A developing unit, used for performing a developing process on the wafer after exposure; The film removal unit is used to remove the smooth film layer on the back side of the wafer.

[0006] Through the above technical scheme, the technical effect achieved is: by setting the cleaning equipment, the wafer is cleaned before entering the coating and developing equipment, which can effectively remove the contaminant particles left on the back of the wafer by the previous deposition and etching.

[0007] By setting the coating unit in the coating and developing system, a smooth film layer can be coated on the back of the wafer. The smooth film layer can effectively reduce the friction force when the photolithography machine carrier absorbs the wafer, so that the wafer can be smoothly expanded during the absorption and leveling process, and finally achieve a very small overlay error; further, by effectively reducing the friction force when the photolithography machine carrier absorbs the wafer, the wear of the photolithography machine carrier can be reduced, and the maintenance cost of the photolithography machine can be greatly reduced; further, the smooth film layer can also effectively eliminate static electricity on the back of the wafer, prevent static electricity from corroding the photolithography machine carrier, and effectively extend the life of the photolithography machine carrier, thereby improving the overall life of the photolithography machine.

[0008] By arranging the film removal unit in the glue coating and developing system, the smooth film layer attached to the back side of the wafer can be effectively removed, thereby preventing the smooth film layer from affecting subsequent processes.

[0009] Preferably, the coating and developing equipment further comprises an interface tower, a cleaning unit, a wafer carrier and a robot; the cleaning unit is arranged in the interface tower and is used for cleaning the wafer carrier and the robot.

[0010] Through the above technical scheme, the technical effect achieved is: by arranging the cleaning unit in the interface tower, the contaminant particles on the wafer carrier and the robot arm can be effectively removed, thereby avoiding the contact time between the robot arm and the wafer carrier and the wafer, thereby avoiding contamination of the wafer.

[0011] Preferably, the cleaning unit comprises: A cleaning member, the surface of which is coated with an adhesive layer, wherein the adhesive layer is used to adhere to the contaminants attached to the wafer stage or the robot when the cleaning member contacts the wafer stage or the robot; The carrying tray is used for storing the cleaning element.

[0012] Through the above technical scheme, the technical effect achieved is: by coating the adhesive layer on the surface of the cleaning piece, when the robot takes the cleaning piece and places it on the wafer carrier, the cleaning piece can effectively adhere to the contaminants attached to the wafer carrier or the robot, thereby achieving the purpose of cleaning the wafer carrier or the robot.

[0013] Preferably, a plurality of support columns are provided on a surface of the carrier plate in contact with the cleaning member, and the support columns are used to support the wafer.

[0014] Through the above technical scheme, the technical effect achieved is: by arranging a plurality of support columns on the contact side of the carrier plate and the cleaning piece, the wafer is conveniently supported. At the same time, when the cleaning piece is placed on the carrier plate, due to the support of the support columns, a space is formed between the wafer and the carrier plate for the fingers of the robot to be inserted, thereby facilitating the robot to take and place the cleaning piece on the carrier plate.

[0015] Preferably, the interface tower comprises a first interface tower, a second interface tower, and a third interface tower; The glue coating and developing device comprises a film box module, a liquid processing module, a heat processing module and an interface module which are arranged in sequence in a horizontal direction; The first interface tower is disposed in the film box module, the second interface tower is disposed between the liquid processing module and the heat processing module, and the third interface tower is disposed in the interface module.

[0016] Preferably, the liquid treatment module and the heat treatment module are both provided with corresponding process units and corresponding manipulators, and each process unit is provided with a corresponding wafer stage; In the liquid processing module, the corresponding robot is used to take the wafer or the cleaning piece from the first interface tower, and place the wafer or the cleaning piece on the corresponding wafer carrier in the liquid processing module, and to put the cleaning piece on the corresponding wafer carrier back into the corresponding carrier plate, and to take the wafer from the corresponding wafer carrier and send it to the second interface tower; In the heat treatment module, the corresponding robot is used to take the wafer or the cleaning piece from the second interface tower and place the wafer or the cleaning piece on the corresponding wafer carrier in the heat treatment module, and to put the cleaning piece on the corresponding wafer carrier back into the corresponding carrier plate, and to take the wafer from the corresponding wafer carrier and send it into the third interface tower.

[0017] Preferably, the interface module further includes: A buffer unit, used for receiving and storing the wafer from the laminating unit; A cooling unit is used to cool the wafer from the cache unit.

[0018] Preferably, the manipulator comprises a first manipulator, a second manipulator and a third manipulator, and the first manipulator, the second manipulator, the third manipulator and the laminating unit are arranged in the interface module; The coating unit includes the corresponding wafer stage; The first robot is used to take out the wafer or the cleaning piece from the third interface tower and send it to the corresponding wafer carrier in the coating unit, and to take out the cleaning piece from the wafer carrier and put it back into the corresponding carrier plate, and to take out the wafer from the coating unit and place it in the cache unit; The second robot is used to transfer the wafer stored in the cache unit into the cooling unit; The third robot is used to take the wafer away from the cooling unit.

[0019] Preferably, the glue coating unit is arranged in the liquid processing module; the developing unit and the film removal unit are arranged in the heat processing module.

[0020] A second aspect of the present invention provides a wafer processing method, comprising: Transfer the wafer to the cleaning equipment to clean the surface of the wafer; Transferring the wafer to a coating unit to coat the front side of the wafer with a photoresist layer; Transferring the wafer to a coating unit to coat the back side of the wafer with a smooth film layer; Transferring the wafer to a developing unit to perform a developing process on the exposed wafer; The wafer is transferred to a film removal unit to remove the smooth film layer coated on the back side of the wafer.

[0021] The technical effect achieved by the above technical scheme is as follows: in the above wafer processing method, the wafer is first transferred to the cleaning equipment to clean the wafer surface, which can effectively remove the contaminant particles left on the back of the wafer by the previous deposition and etching. On this basis, it also avoids the contaminant particles from being covered when the smooth film layer is coated on the back of the wafer; before exposing the wafer, the wafer is first transferred to the coating unit, and a smooth film layer is coated on the back of the wafer, which can effectively reduce the friction force when the lithography machine carrier adsorbs the wafer, thereby allowing the wafer to expand smoothly during the leveling process, and ultimately achieving extremely small overlay errors. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 It is a schematic diagram of the top view of the structure of the gluing and developing device in Embodiment 1 of the present invention; Figure 2 The cross-sectional structure of the coating and developing device in Example 1 of the present invention is shown in a top view. Figure 1 ; Figure 3 The cross-sectional structure of the coating and developing device of Embodiment 1 of the present invention is shown in a top view. Figure 2 ; Figure 4This is a schematic diagram of the structure of the cleaning unit in Example 1 of the present invention; Figure 5 This is a flow chart of the core steps of wafer processing in Example 2 of the present invention.

[0023] Figure 6 Flow chart of detailed steps of wafer processing in Example 2 of the present invention.

[0024] Reference numerals: 1-chip box module; 11-interlayer manipulator; 12-first interface tower; 2-liquid processing module; 21-liquid processing manipulator; 3-heat treatment module; 31-heat treatment manipulator; 4-interface module; 41-third interface tower; 42-first manipulator; 43-second manipulator; 44-third manipulator; 45-Laminating unit; 5- second interface tower; 6-cleaning unit; 61-cleaning member; 62-carrying plate; 63-support column; 7-Photolithography machine. DETAILED DESCRIPTION

[0025] In order to make the purpose, technical scheme and advantages of the present invention clearer, the technical scheme in the embodiment of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work belong to the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be the usual meanings understood by people with general skills in the field to which the present invention belongs. "Including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Unless otherwise specified, the "connection" described in this article can be a direct connection or an indirect connection, that is, a connection through an intermediate.

[0026] See also Figure 1-Figure 4 , a first embodiment of the present invention provides a gum coating and developing system, comprising: a cleaning device (not shown) and a gum coating and developing device; The cleaning device is used to clean the wafer; in this embodiment, the cleaning device is a dedicated wafer cleaning device, which is a common device in the field of wafer processing and is well known to those skilled in the art, and will not be described in detail here. By setting up the cleaning device, the wafer is cleaned before entering the coating and developing device, which can effectively remove the contaminant particles left on the back of the wafer by the previous deposition and etching. On this basis, it also avoids the contaminant particles from being covered in the smooth film layer when the back of the wafer is coated.

[0027] See also Figure 1 , Figure 2 , Figure 3 The coating and developing device comprises a film box module 1, a liquid treatment module 2, a heat treatment module 3 and an interface module 4 which are arranged in sequence in a horizontal direction. The film box module 1, the liquid treatment module 2, the heat treatment module 3 and the interface module 4 are all provided with corresponding manipulators, and the manipulators are used to take and place the wafers.

[0028] The wafer box module 1 is used to receive and store wafers from the cleaning equipment.

[0029] The wafer box module 1 includes an interlayer robot 11 and a first interface tower 12. The interlayer robot 11 is used to take the cleaned wafer and transfer it to the first interface tower 12. The wafer box module 1 also includes a pre-treatment unit, which is used to coat hexamethyldisilazane (HMDS) on the front side of the wafer to enhance the adhesion between the wafer surface and the photoresist, in preparation for coating the photoresist.

[0030] The liquid treatment module 2 and the heat treatment module 3 are both provided with a corresponding plurality of process units and the corresponding robot arms, and each of the process units is provided with a corresponding wafer stage.

[0031] See also Figure 3 , wherein, in the liquid processing module 2, the process unit comprises: a coating unit (PR), used for performing a photoresist coating process on the wafers cleaned by the cleaning device; A development unit (SDC), used for performing a development process on the wafer after exposure; See also Figure 3 In the heat treatment module 3, the process unit includes: A soft bake unit (Soft Bake), used to heat the wafer to remove the solvent in the photoresist, enhance the adhesion of the photoresist, and release the stress in the photoresist film; The edge exposure unit (WEE) is used to expose the edge of the silicon wafer to determine the precise position of the chip pattern on the silicon wafer.

[0032] Post-baking unit (PEB), used to bake and heat the wafer after exposure; A hard bake unit (Hard Bake), used to bake and heat the wafer after the development process; a film removal unit (BRS), used for removing the smooth film layer on the back side of the wafer; An optical defect inspection unit (AOI) is used to inspect the wafer after development.

[0033] See also Figure 3 A second interface tower 5 is provided between the liquid treatment module 2 and the heat treatment module 3; a liquid treatment robot 21 is provided in the liquid treatment module 2, which is used to transfer the wafers in the first interface tower 12 to the corresponding process unit (such as the glue coating unit) in the liquid treatment module 2, and is also used to transfer the wafers in the process unit (such as the glue coating unit) to the second interface tower 5. A heat treatment robot 31 is provided in the heat treatment module 3, which is used to transfer the wafers in the second interface tower 5 to the corresponding process unit (such as the edge exposure unit) in the heat treatment module 3, and is also used to take out the wafers in the process unit (such as the edge exposure unit) and transfer them to the interface module 4.

[0034] See also Figure 3 The interface module 4 includes: a third interface tower 41, a coating unit 45, a cache unit and a cooling unit.

[0035] After the thermal processing robot 31 takes the wafer out of the corresponding process unit (such as the edge exposure unit) of the thermal processing module 3 , it transfers the wafer to the third interface tower 41 .

[0036] The coating unit 45 is used to coat a smooth film layer on the back of the wafer to increase the smoothness of the back of the wafer. The smooth film layer can effectively reduce the friction force when the photolithography machine carrier absorbs the wafer, so that the wafer can be smoothly expanded during the absorption process, and finally achieve a very small overlay error; further, by effectively reducing the friction force when the photolithography machine carrier absorbs the wafer, the wear of the photolithography machine carrier can be reduced, and the maintenance cost of the photolithography machine can be greatly reduced; further, the smooth film layer can also effectively eliminate static electricity on the back of the wafer, prevent static electricity from corroding the photolithography machine carrier, and effectively extend the life of the photolithography machine carrier, thereby improving the overall life of the photolithography machine.

[0037] The buffer unit is used to receive and store the wafers from the coating unit 45; the buffer unit is like a "reservoir" that can adjust the working differences between different units. This can avoid the entire production line from being stopped due to a short delay or failure of a unit, ensuring the continuity and stability of the production process.

[0038] The cooling unit is used to cool the wafer from the cache unit.

[0039] Furthermore, the interface module 4 is also provided with a first manipulator 42, a second manipulator 43 and a third manipulator 44. The first robot 42 is used to transfer the wafer in the third interface tower 41 to the coating unit 45, and is used to transfer the wafer in the coating unit 45 to the cache unit; The second robot 43 is used to transfer the wafers in the cache unit to the cooling unit for cooling.

[0040] The third robot 44 is used to transmit the experience in the cooling unit to the photolithography machine for exposure processing.

[0041] See also Figure 2 In this embodiment, the first interface tower 12, the second interface tower 5 and the third interface tower 41 are all provided with a cleaning unit 6. The cleaning unit 6 is used to clean the wafer carrier and the robot. By arranging the cleaning unit 6 in the interface tower, the pollutant particles on the wafer carrier and the robot can be effectively removed, thereby avoiding cross contamination of the wafer by the robot and the wafer carrier.

[0042] See also Figure 4 Further, the cleaning unit 6 includes: a cleaning member 61 and a carrier plate 62. The surface of the cleaning member 61 is coated with an adhesive layer, and the adhesive layer is used to adhere to the contaminants attached to the wafer stage or the robot when it contacts the wafer stage or the robot; the carrier plate 62 is used to store the cleaning member 61. By coating the adhesive layer on the surface of the cleaning member 61, when the robot takes the cleaning member 61 and places it on the wafer stage, the cleaning member 61 can effectively adhere to the contaminants attached to the wafer stage or the robot, thereby achieving the purpose of cleaning the wafer stage or the robot.

[0043] Furthermore, a plurality of support columns 63 are provided on the contact side of the carrier plate 62 and the cleaning member 61, and the support columns 63 are used to support the wafer. By providing a plurality of support columns 63 on the contact side of the carrier plate 62 and the cleaning member 61, it is convenient to support the wafer. At the same time, when the cleaning member 61 is placed on the carrier plate 62, due to the support of the support columns 63, a space is formed between the wafer and the carrier plate 62 for the fingers of the robot to insert, thereby facilitating the robot to take and place the cleaning member 61 on the carrier plate 62.

[0044] The liquid treatment robot 21, the heat treatment robot 31 and the first robot 42 arranged in the interface unit will periodically clean the wafer carrier in the module where they are located.

[0045] For example, in the liquid processing module 2, the liquid processing robot 21 takes the cleaning member 61 from the first interface tower 12, and places the cleaning member 61 on the corresponding wafer stage in the liquid processing module 2, and then puts the cleaning member 61 on the corresponding wafer stage back into the corresponding carrier plate 62. In this process, when the cleaning member 61 contacts the wafer stage or the liquid processing robot 21, the contaminants on the wafer stage or the liquid processing robot 21 will be adhered to the adhesive layer of the cleaning member 61, thereby achieving the purpose of cleaning the wafer stage and the liquid processing robot 21.

[0046] For another example, in the heat treatment module 3, the heat treatment robot 31 takes the cleaning member 61 from the second interface tower 5, and places the cleaning member 61 on the corresponding wafer stage in the heat treatment module 3, and then puts the cleaning member 61 on the corresponding wafer stage back into the corresponding carrier plate 62. During this process, when the cleaning member 61 contacts the corresponding wafer stage or the heat treatment robot 31 in the heat treatment module 3, the contaminants on the corresponding wafer stage or the liquid treatment robot 21 will be adhered to the adhesion layer of the cleaning member 61. Thus, the purpose of cleaning the wafer stage and the heat treatment robot 31 is achieved.

[0047] The coating unit 45 includes the corresponding wafer carrier; when cleaning the wafer carrier and the first robot 42 in the coating unit 45, the first robot 42 is used to take out the cleaning piece 61 from the third interface tower 41 and send it to the corresponding wafer carrier in the coating unit 45, and then take out the cleaning piece 61 from the wafer carrier and put it back into the corresponding carrier plate 62.

[0048] See also Figure 5-Figure 6 Based on the above-mentioned coating and developing system, a second embodiment of the present invention provides a wafer processing method, comprising: S1, transferring the wafer to a cleaning device to clean the surface of the wafer; S2, transferring the wafer to the pre-processing unit, coating the front side of the wafer with hexamethyldisilazane (HMDS) to enhance the adhesion between the wafer surface and the photoresist.

[0049] S3, transferring the wafer to a coating unit, and coating a photoresist layer on the front side of the wafer; S4, transferring the wafer coated with the photoresist layer to the soft baking unit for baking and heating; S5, transferring the wafer to the edge exposure unit for edge exposure.

[0050] S6, transferring the wafer to the coating unit 45 (BACS), coating the back side of the wafer with a smooth film layer; S7, transferring the wafer to the photolithography machine 7 for photolithography processing (exposure); S8, transferring the wafer after the exposure process of the photolithography machine 7 to the post-baking unit to bake and heat the wafer.

[0051] S9, transferring the wafer to a developing unit, and performing a developing process on the exposed wafer; S10, transferring the wafer that has been processed by the development process to the hard baking unit, and baking and heating the wafer.

[0052] S11, transferring the wafer to a film removal unit to remove the smooth film layer coated on the back side of the wafer.

[0053] S12, the wafer is transferred to the optical defect detection unit to inspect the wafer after development.

[0054] In the above-mentioned wafer processing method, the wafer is first transferred to a cleaning device to clean the wafer surface, which can effectively remove the contaminant particles left on the back of the wafer by previous deposition and etching. On this basis, it also avoids the contaminant particles from being covered when a smooth film layer is coated on the back of the wafer; before exposing the wafer, the wafer is first transferred to a coating unit 45, and a smooth film layer is coated on the back of the wafer, which can effectively reduce the friction force when the lithography machine carrier adsorbs the wafer, thereby allowing the wafer to expand smoothly during the leveling process, and ultimately achieving extremely small overlay errors.

[0055] In summary, the present invention can effectively remove the pollutant particles left on the back of the wafer by the previous deposition and etching by setting the cleaning equipment, and on this basis, it also avoids the pollutant particles from being coated in the smooth film layer when the back of the wafer is coated; further, by setting the coating unit in the coating and developing system, it can be achieved that the back of the wafer is coated with a smooth film layer. The smooth film layer can effectively reduce the friction force when the photolithography machine carrier absorbs the wafer, so that the wafer can be smoothly expanded during the flattening process, and finally achieve a very small overlay error; further, by effectively reducing the friction force when the photolithography machine carrier absorbs the wafer, the wear of the photolithography machine carrier can be reduced, and the maintenance cost of the photolithography machine can be greatly reduced; further, the smooth film layer can also effectively eliminate the static electricity on the back of the wafer, prevent static electricity from corroding the photolithography machine carrier, and effectively extend the life of the photolithography machine carrier, and thus improve the overall life of the photolithography machine. Therefore, the present invention effectively overcomes the various shortcomings in the prior art and has a high industrial utilization value.

[0056] The above is only a specific implementation of the embodiment of the present application, but the protection scope of the embodiment of the present application is not limited thereto, and any changes or replacements within the technical scope disclosed in the embodiment of the present application should be included in the protection scope of the embodiment of the present application. Therefore, the protection scope of the embodiment of the present application should be based on the protection scope of the claims.

Claims

1. A coating and developing system, characterized in that: include: Cleaning equipment and coating and developing equipment; The cleaning equipment is used to clean the wafer; The glue coating and developing device comprises: A coating unit, used for performing a photoresist coating process on the wafer cleaned by the cleaning device; A coating unit, the coating unit is used to coat a smooth film layer on the back side of the wafer to increase the smoothness of the back side of the wafer; A developing unit, used for performing a developing process on the wafer after exposure; The film removal unit is used to remove the smooth film layer on the back side of the wafer.

2. The coating and developing system according to claim 1, characterized in that: The glue coating and developing equipment also includes an interface tower, a cleaning unit, a wafer stage and a robot; The cleaning unit is arranged in the interface tower and is used for cleaning the wafer carrier and the robot.

3. The coating and developing system according to claim 2, characterized in that: The cleaning unit comprises: A cleaning member, the surface of which is coated with an adhesive layer, wherein the adhesive layer is used to adhere to the contaminants attached to the wafer stage or the robot when the cleaning member contacts the wafer stage or the robot; The carrying tray is used for storing the cleaning element.

4. The coating and developing system according to claim 3, characterized in that: A surface of the carrier plate in contact with the cleaning member is provided with a plurality of support columns, and the support columns are used to support the wafer.

5. The coating and developing system according to claim 4, characterized in that: The interface towers include a first interface tower, a second interface tower, and a third interface tower; The glue coating and developing device comprises a film box module, a liquid processing module, a heat processing module and an interface module which are arranged in sequence; The first interface tower is disposed in the film box module, the second interface tower is disposed between the liquid processing module and the heat processing module, and the third interface tower is disposed in the interface module.

6. The coating and developing system according to claim 5, characterized in that: The liquid treatment module and the heat treatment module are both provided with corresponding process units and corresponding manipulators, and each process unit is provided with a corresponding wafer stage; In the liquid processing module, the corresponding robot is used to take the wafer or the cleaning piece from the first interface tower, and place the wafer or the cleaning piece on the corresponding wafer carrier in the liquid processing module, and to put the cleaning piece on the corresponding wafer carrier back into the corresponding carrier plate, and to take the wafer from the corresponding wafer carrier and send it to the second interface tower; In the heat treatment module, the corresponding robot is used to take the wafer or the cleaning piece from the second interface tower and place the wafer or the cleaning piece on the corresponding wafer carrier in the heat treatment module, and to put the cleaning piece on the corresponding wafer carrier back into the corresponding carrier plate, and to take the wafer from the corresponding wafer carrier and send it into the third interface tower.

7. The coating and developing system according to claim 6, characterized in that: The interface module further includes a cache unit and a cooling unit; the cache unit is used to receive and store the wafer from the coating unit; the cooling unit is used to cool the wafer from the cache unit.

8. The coating and developing system according to claim 7, characterized in that: The manipulator comprises a first manipulator, a second manipulator and a third manipulator, and the first manipulator, the second manipulator, the third manipulator and the laminating unit are arranged in the interface module; The coating unit includes the corresponding wafer stage; The first robot is used to take out the wafer or the cleaning piece from the third interface tower and send it to the corresponding wafer carrier in the coating unit, and to take out the cleaning piece from the wafer carrier and put it back into the corresponding carrier plate, and to take out the wafer from the coating unit and place it in the cache unit; The second robot is used to transfer the wafer stored in the cache unit into the cooling unit; The third robot is used to take the wafer away from the cooling unit.

9. The coating and developing system according to claim 8, characterized in that: The glue coating unit and the developing unit are arranged in the liquid processing module; and the film removal unit is arranged in the heat processing module.

10. A wafer processing method, using the coating and developing system according to any one of claims 1 to 9, characterized in that: include: Transfer the wafer to the cleaning equipment to clean the surface of the wafer; Transferring the wafer to a coating unit to coat the front side of the wafer with a photoresist layer; Transferring the wafer to a coating unit to coat the back side of the wafer with a smooth film layer; Transferring the wafer to a developing unit to perform a developing process on the exposed wafer; The wafer is transferred to a film removal unit to remove the smooth film layer coated on the back side of the wafer.

Images