Wafer lifting mechanism, thin film deposition equipment, wafer lifting method and storage medium

Abstract

The invention provides a wafer lifting mechanism, thin film deposition equipment, a wafer lifting method and a computer readable storage medium. The wafer lifting mechanism comprises at least one supporting part and a driving part. The first end of the at least one supporting part is connected with the driving part, and the second end of the at least one supporting part is used for supporting a wafer. The driving part is configured to drive the at least one supporting part to get close to a wafer at a first speed in the process of feeding the wafer, and decelerate after reaching a preset first distance of the wafer, so that the at least one supporting part is in contact with and bears the wafer at a second speed smaller than a preset first speed threshold value; and driving the at least one supporting part to lift the wafer to a preset process position after the process of feeding the wafer. The wafer conveying device can be used for improving the wafer conveying efficiency and reducing the impact force generated at the moment when the supporting part makes contact with the wafer, and then the performance of a thin film deposited on the surface of the wafer is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor device processing, and in particular to a wafer lifting mechanism, a thin film deposition device, a wafer lifting method, and a computer-readable storage medium. Background Art

[0002] In the semiconductor process equipment (e.g., CVD equipment) of the prior art, the subsequent wafer transmission action is mainly performed by controlling the lifting and lowering of the wafer support pins. Therefore, controlling the lifting and lowering speed of the wafer support pins plays a vital role in the overall production capacity of the equipment and the stability during the wafer transmission process. However, in the current wafer support pin lifting and lowering system, a common problem is that the movement of the support pins in the lifting process from the lowest position to the highest position is a uniform linear motion. Taking the entire stroke of the wafer support pin's rising movement as an example, the stroke before the support pins do not contact the wafer is an unloaded stroke. If the wafer support pins run too slowly, the wafer transmission efficiency will be reduced. In addition, before the wafer support pins reach the wafer transmission position, the moment they contact the wafer, the rising speed of the wafer support pins is relatively high. At the moment the support pins contact the wafer, an impact force will be generated on the wafer, thereby affecting the granularity on the back of the wafer, and then affecting the performance of the thin film deposited on the wafer surface.

[0003] In order to overcome the above-mentioned defects of the prior art, an improved wafer lifting mechanism is urgently needed in the art to improve the wafer transfer efficiency and reduce the impact force generated at the moment when the support part contacts the wafer, thereby improving the performance of the thin film deposited on the wafer surface. Summary of the invention

[0004] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or decisive elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0005] In order to overcome the above-mentioned defects existing in the prior art, the present invention provides a wafer lifting mechanism, a thin film deposition equipment, a wafer lifting method and a computer-readable storage medium, which can be used to improve the wafer transfer efficiency by controlling the lifting speed of the wafer lifting mechanism between the wafer transfer position and the process position, and to reduce the impact force generated at the moment when the support part contacts the wafer, thereby improving the performance of the thin film deposited on the wafer surface.

[0006] Specifically, the wafer lifting mechanism provided according to the first aspect of the present invention includes at least one supporting part and a driving part. The first end of the at least one supporting part is connected to the driving part, and the second end thereof is used to support the wafer. The driving part is configured to: in the process of transferring the wafer, first drive the at least one supporting part to approach the wafer at a first speed, and decelerate after reaching a preset first distance from the wafer, so that the at least one supporting part contacts and carries the wafer at a second speed less than a preset first speed threshold; and after the process of transferring the wafer, drive the at least one supporting part to lift the wafer to a preset process position.

[0007] Further, in some embodiments of the present invention, the first distance corresponds to a preset first acceleration. The step of first driving the at least one support part to approach the wafer at a first speed, and decelerating after reaching the preset first distance from the wafer, so that the at least one support part contacts and carries the wafer at a second speed less than the preset first speed threshold comprises: driving the at least one support part to perform uniform acceleration motion in a first direction approaching the wafer with the first acceleration; in response to the at least one support part arriving at the first distance from the wafer, driving the at least one support part to perform uniform deceleration motion in a first direction approaching the wafer with the first acceleration, so that the at least one support part contacts and carries the wafer at a second speed less than the first speed threshold.

[0008] Further, in some embodiments of the present invention, the first speed threshold is determined according to the maximum impact speed that the wafer is allowed to withstand, or the first speed threshold is zero.

[0009] Further, in some embodiments of the present invention, the process position is higher than the wafer transfer position for transferring the wafer. The step of driving the at least one support part to lift the wafer to the preset process position includes: driving the at least one support part to rise at a third speed so that the wafer is separated from the robot to which it is adsorbed. The third speed is determined according to the maximum adsorption force that the wafer is allowed to withstand; and in response to the at least one support part reaching the preset second distance of the wafer transfer position, driving the at least one support part to continue to rise to the process position at a fourth speed. The fourth speed is greater than the third speed.

[0010] Further, in some embodiments of the present invention, the step of driving the at least one supporting part to rise at a third speed so that the wafer is separated from the robot to which it is adsorbed includes: driving the at least one supporting part to rise at a preset second acceleration so that the wafer is separated from the robot to which it is adsorbed. The second acceleration is determined according to the maximum adsorption force that the wafer is allowed to withstand.

[0011] Furthermore, in some embodiments of the present invention, the driving unit is also configured to: after completing the processing of the wafer, drive the at least one supporting unit to lift the wafer back to the wafer transfer position so that the robot can absorb and transfer the wafer.

[0012] Further, in some embodiments of the present invention, the wafer lifting mechanism includes a plurality of the driving parts. The at least one supporting part includes a plurality of wafer supporting rods. The lower end of each of the wafer supporting rods is connected to one of the driving parts, and the upper end thereof passes through the corresponding supporting rod through hole on the lower substrate to contact and carry the wafer. Or the wafer lifting mechanism includes at least one of the driving parts. The at least one supporting part includes a lifting support plate and a plurality of wafer supporting rods. The lifting support plate is connected to at least one of the driving parts. The lower end of each of the wafer supporting rods can detachably contact the upper surface of one of the lifting support plates, and the upper end thereof passes through the corresponding supporting rod through hole on the lower substrate to contact and carry the wafer. Or the wafer lifting mechanism includes a plurality of the driving parts. The at least one supporting part includes an edge ring and a plurality of lifting supporting rods. The edge ring is used to contact and carry the wafer. The lower end of each of the lifting supporting rods is connected to one of the driving parts, and the upper end thereof passes through the corresponding supporting rod through hole on the lower substrate, or bypasses the lower substrate from the periphery to connect to the edge ring. Or the wafer lifting mechanism includes a plurality of the driving parts. The at least one supporting part includes an edge ring and a plurality of lifting rods. The edge ring is used to contact and carry the wafer. The upper end of each lifting rod is connected to one of the driving parts, and the lower end thereof passes through a corresponding rod through hole on the upper substrate, or bypasses the upper substrate from the periphery to connect to the edge ring.

[0013] Further, in some embodiments of the present invention, the upper substrate is a shower head and / or a heating plate of a thin film deposition device. The upper substrate is a shower head and / or a heating plate of the thin film deposition device.

[0014] In addition, the above-mentioned thin film deposition equipment provided according to the second aspect of the present invention includes a process chamber and a wafer lifting mechanism as provided in the first aspect of the present invention. The process chamber is equipped with an upper substrate and / or a lower substrate for performing a thin film deposition process on a wafer. The upper substrate is a shower head and / or a heating plate, and the upper substrate is a shower head and / or a heating plate. The wafer lifting mechanism is arranged at the upper part or the lower part of the process chamber, and is used to lift the wafer.

[0015] In addition, the above-mentioned wafer lifting method provided according to the third aspect of the present invention includes: in the process of transferring the wafer, first driving at least one supporting part to approach the wafer at a first speed, and decelerating after reaching a preset first distance from the wafer, so that the at least one supporting part contacts and carries the wafer at a second speed less than the preset first speed threshold; and after the process of transferring the wafer, driving the at least one supporting part to lift the wafer to a preset process position.

[0016] In addition, the computer-readable storage medium provided in the fourth aspect of the present invention stores computer instructions, which, when executed by a processor, implement the wafer lifting method provided in the third aspect of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0018] Figure 1 A schematic structural diagram of a wafer lifting mechanism provided according to some embodiments of the present invention is shown.

[0019] Figure 2 A curve diagram showing the change of position and speed over time during the lifting process of the support part provided in a reference example of the present invention is shown.

[0020] Figure 3 A schematic flow chart of a method for processing a semiconductor device according to some embodiments of the present invention is shown.

[0021] Figure 4 A schematic diagram showing a support portion provided according to some embodiments of the present invention approaching a wafer is shown.

[0022] Figure 5 A schematic diagram showing a supporting portion contacting a wafer according to some embodiments of the present invention is shown.

[0023] Figure 6 A schematic diagram showing a support portion provided according to some embodiments of the present invention driving a wafer to rise to the highest point is shown.

[0024] Figure 7 A graph showing changes in the position and speed of a support portion over time during a process from a film transfer position to a process position according to some embodiments of the present invention is shown.

[0025] Figure 8A graph showing changes in the position and speed of the support portion over time during a process from a film transfer position to a process position and then back to the film transfer position according to some embodiments of the present invention is shown. DETAILED DESCRIPTION

[0026] The following specific embodiments illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this implementation. On the contrary, the purpose of introducing the invention in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0027] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0028] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0029] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as a second component, region, layer and / or part without departing from some embodiments of the present invention.

[0030] As mentioned above, in the current wafer support pin lifting system, a common problem is that the movement of the support pin in the lifting process from the lowest position to the highest position is a uniform linear motion. Taking the entire stroke of the wafer support pin's rising movement as an example, the stroke before the support pin contacts the wafer is a no-load stroke. If the wafer support pin runs too slowly, the wafer transfer efficiency will be reduced. In addition, before the wafer support pin reaches the transfer position, the moment it contacts the wafer, the rising speed of the wafer support pin is relatively high. At the moment the support pin contacts the wafer, an impact force will be generated on the wafer, which will affect the granularity on the back of the wafer, and further affect the performance of the thin film deposited on the wafer surface.

[0031] In order to overcome the above-mentioned defects existing in the prior art, the present invention provides a wafer lifting mechanism, a thin film deposition equipment, a wafer lifting method and a computer-readable storage medium, which can be used to improve the wafer transfer efficiency by controlling the lifting speed of the wafer lifting mechanism between the wafer transfer position and the process position, and to reduce the impact force generated at the moment when the support part contacts the wafer, thereby improving the performance of the thin film deposited on the wafer surface.

[0032] In some non-limiting embodiments, the wafer lifting method provided in the third aspect may be implemented by the thin film deposition equipment provided in the second aspect.

[0033] Specifically, the above-mentioned thin film deposition equipment provided in the second aspect of the present invention includes a process chamber and a wafer lifting mechanism as provided in the first aspect of the present invention. The process chamber is equipped with an upper substrate and / or a lower substrate for performing a thin film deposition process on a wafer. Here, the upper substrate is a shower head and / or a heating plate, and the upper substrate is a shower head and / or a heating plate. The wafer lifting mechanism is arranged at the upper part or the lower part of the process chamber, and is used to lift and lower the wafer.

[0034] Further, in some embodiments, in the thin film deposition device provided by the second aspect of the present invention, the upper substrate is a shower head for spraying process gas onto the front side of the wafer to be processed. The lower substrate is a heating plate for heating the wafer. Here, the thin film deposition device can perform a front thin film deposition process on the wafer to be processed.

[0035] Alternatively, in some embodiments, in the thin film deposition device provided by the second aspect of the present invention, the upper substrate is a heating plate for heating the wafer to be processed. The lower substrate is a shower head for spraying process gas to the back side of the wafer. Here, the thin film deposition device can perform a back side thin film deposition process on the wafer to be processed.

[0036] Alternatively, in some embodiments, in the thin film deposition device provided by the second aspect of the present invention, both the upper substrate and the lower substrate are shower heads for spraying process gas onto the wafer to be processed. Here, the thin film deposition device can perform a room temperature thin film deposition process on the wafer to be processed.

[0037] Alternatively, in some embodiments, in the thin film deposition device provided by the second aspect of the present invention, both the upper substrate and the lower substrate are heating plates for heating the wafer to be processed. Here, the thin film deposition device can perform a high-temperature thin film deposition process on the wafer to be processed.

[0038] Please refer to further Figure 1 . Figure 1 A schematic structural diagram of a wafer lifting mechanism provided according to some embodiments of the present invention is shown.

[0039] exist Figure 1 In the illustrated embodiment, the wafer lifting mechanism provided by the first aspect of the present invention comprises at least one supporting portion 11 and a driving portion 12. Here, a first end of the at least one supporting portion 11 is connected to the driving portion 12, and a second end thereof is used to support the wafer 13.

[0040] Specifically, in some embodiments, the wafer lifting mechanism includes a plurality of driving parts, and at least one supporting part includes a plurality of wafer supporting rods. Here, the lower end of each wafer supporting rod is respectively connected to a driving part, and the upper end thereof passes through a corresponding supporting rod through hole on the lower substrate to contact and carry the wafer 13.

[0041] Alternatively, in some embodiments, the wafer lifting mechanism includes at least one driving part, and at least one supporting part includes a lifting support plate and a plurality of wafer support rods. Here, the lifting support plate is connected to at least one driving part, and the lower end of each wafer support rod can detachably contact the upper surface of a lifting support plate, and the upper end thereof passes through the corresponding support rod through hole on the lower substrate to contact and carry the wafer 13.

[0042] Alternatively, in some embodiments, the wafer lifting mechanism includes a plurality of driving parts, and at least one supporting part includes an edge ring and a plurality of lifting rods. Here, the edge ring is used to contact and carry the wafer 13, and the lower end of each lifting rod is connected to a driving part, and the upper end thereof passes through the corresponding rod through hole on the lower substrate, or bypasses the lower substrate from the periphery to connect to the edge ring.

[0043] Alternatively, in some embodiments, the wafer lifting mechanism includes a plurality of driving parts, and at least one supporting part includes an edge ring and a plurality of lifting rods. Here, the edge ring is used to contact and carry the wafer 13, and the upper end of each lifting rod is connected to a driving part, and the lower end thereof passes through the corresponding rod through hole on the upper substrate, or bypasses the upper substrate from the periphery to connect to the edge ring.

[0044] In addition, in some non-limiting embodiments, the thin film deposition device provided in the second aspect may also be configured with a memory and a controller. The memory includes but is not limited to the computer-readable storage medium provided in the fourth aspect, on which computer instructions are stored. The controller is connected to the memory and is configured to execute the computer instructions stored in the memory to implement the wafer lifting method provided in the third aspect.

[0045] The working principle of the above-mentioned thin film deposition equipment will be described below in conjunction with some embodiments of the wafer lifting method. Those skilled in the art will understand that the embodiments of these lifting methods are only some non-limiting implementation methods provided by the present invention, which are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are convenient for the public to implement, rather than limiting all functions or all working modes of the thin film deposition equipment. Similarly, the thin film deposition equipment is also only a non-limiting implementation method provided by the present invention, and does not constitute a limitation on the execution subject and execution order of each step in these wafer lifting methods.

[0046] Please refer to Figure 2 . Figure 2 A curve diagram showing the change of position and speed over time during the lifting process of the support part provided in a reference example of the present invention is shown.

[0047] like Figure 2 As shown, the existing wafer support mechanism controls the movement of the support part from the lowest position to the highest position, and from the highest position to the lowest position during the lifting process, which are all uniform linear motion. Therefore, the stroke before the support part 11 does not contact the wafer 13 is an unloaded stroke, and the operating speed of the support part 11 is too low, which will reduce the wafer transfer efficiency of the wafer 13. In addition, before the support part 11 reaches the wafer transfer position, the moment it contacts the wafer 13, the rising speed of the support part 11 is relatively high. At the moment the support part 11 contacts the wafer, an impact force will be generated on the wafer 13, which will affect the granularity on the back of the wafer 13, and further affect the performance of the thin film deposited on the surface of the wafer 13.

[0048] Please refer to Figure 3 to Figure 7 . Figure 3 A schematic flow chart of a method for processing a semiconductor device according to some embodiments of the present invention is shown. Figure 4 A schematic diagram showing a support portion provided according to some embodiments of the present invention approaching a wafer is shown. Figure 5 A schematic diagram showing a supporting portion contacting a wafer according to some embodiments of the present invention is shown. Figure 6 A schematic diagram showing a support portion provided according to some embodiments of the present invention driving a wafer to rise to the highest point is shown. Figure 7 A graph showing changes in the position and speed of a support portion over time during a process from a film transfer position to a process position according to some embodiments of the present invention is shown.

[0049] like Figure 3 , Figure 4 and Figure 7 As shown, in the process of transferring the wafer 13, that is, in the process of the support part 11 moving from the lowest point Z0 to the first distance Z2 close to the wafer 13, the driving part 12 can first drive at least one support part 11 to approach the wafer 13 at a first speed, and decelerate after arriving at the preset first distance Z2 of the wafer 13, so that at least one support part 11 contacts and carries the wafer 13 at a second speed less than the preset first speed threshold.

[0050] Further, in some preferred embodiments, the first distance corresponds to a preset first acceleration. Specifically, the driving unit 12 can first drive at least one supporting unit 11 to perform uniform acceleration motion in a first direction close to the wafer 13 at a first acceleration a1. At this time, the first speed of the supporting unit 11 gradually increases with the passage of time.

[0051] Afterwards, if Figure 5 and Figure 7 As shown, in response to at least one supporting portion 11 arriving at a first distance Z2 from the wafer 13, the driving portion 12 can drive at least one supporting portion 11 to perform a uniform deceleration motion in a first direction close to the wafer 13 at a first acceleration a1, so that at least one supporting portion 11 contacts and carries the wafer 13 at a second speed less than the first speed threshold, and reaches the Z3 position.

[0052] In addition, in some embodiments, during the process from the lowest point Z0 to the Z3 position contacting the wafer 13, the driving unit 12 can also adopt uniform acceleration and uniform deceleration motion with different forward acceleration and reverse acceleration, or control schemes of variable acceleration motion in various forms such as exponential linear and parabolic shapes, so as to also obtain the at least one supporting part 11 contacting and carrying the wafer 13 at a second speed less than the first speed threshold.

[0053] Further, in some preferred embodiments, the first speed threshold is determined according to the maximum impact speed that the wafer 13 is allowed to withstand. Here, the maximum impact speed that the wafer 13 is allowed to withstand is preferably in the range of 8-12 mm / s and does not exceed 20 mm / s.

[0054] Alternatively, in some optional embodiments, the first speed threshold is zero.

[0055] In this way, the wafer lifting mechanism provided in the first aspect of the present invention can reduce the impact force generated by the support part 11 on the wafer 13 by controlling the second speed of the support part 11 at the moment of contact with the wafer 13, thereby improving the performance of the thin film deposited on the surface of the wafer 13.

[0056] Afterwards, if Figure 6As shown, after the wafer 13 is introduced, the driving unit 12 can drive at least one supporting unit 11 to lift the wafer 13 to a preset process position Z1. Here, the process position is higher than the wafer transfer position of the introduced wafer 13.

[0057] Specifically, the driving unit 12 can first drive at least one supporting unit 11 to rise at a third speed (e.g., 1 mm / s) to separate the wafer 13 from the robot that adsorbs it. Here, the third speed is determined according to the maximum adsorption force that the wafer 13 is allowed to withstand. Here, the maximum adsorption force that the wafer 13 is allowed to withstand is in the range of 30 to 50 torr.

[0058] Furthermore, if Figure 7 As shown, the driving unit 12 can preferably be accelerated at a preset second acceleration a2 (for example, 0.1 mm / s 2 ) drives at least one support part 11 to rise from the Z3 position to the Z4 position, so that the wafer 13 is separated from the robot arm by which it is adsorbed. At this time, the third speed of the support part 11 gradually increases with the passage of time. Here, the second acceleration a2 is based on the maximum adsorption force F that the wafer 13 is allowed to withstand. max To determine:

[0059] a2≤F max / m

[0060] Among them, F max is the maximum adsorption force that the wafer 13 is allowed to withstand, and m is the mass of the wafer 13.

[0061] In this way, the driving unit 12 can control the supporting unit 11 to slowly rise from the Z3 position to the Z4 position, so that the wafer 13 slowly leaves the lower substrate or the robot, thereby preventing the electrostatic force between the wafer 13 and the lower substrate or the robot from not being completely eliminated. Here, the height range between the Z3 position and the Z4 position is 0.5 mm to 1 mm.

[0062] Afterwards, if Figure 7 As shown, in response to at least one support portion 11 reaching the second distance preset at the wafer transfer position, the driving portion 12 can drive at least one support portion 11 to continue to rise to the process position Z1 at a fourth speed (e.g., 10 mm / s). Here, the fourth speed is greater than the third speed. The second distance preset at the wafer transfer position is used to indicate that the wafer 13 has left the robot. The height range between the Z4 position and the Z1 position is 13 mm to 14 mm.

[0063] Please refer to Figure 8 . Figure 8 A graph showing changes in the position and speed of the support portion over time during a process from a film transfer position to a process position and then back to the film transfer position according to some embodiments of the present invention is shown.

[0064] like Figure 8 As shown, after the processing of the wafer 13 is completed, the driving unit 12 can also drive at least one supporting unit 11 to lift the wafer 13 back to the wafer transfer position so that the robot can absorb and transfer the wafer 13.

[0065] In summary, the above-mentioned wafer lifting mechanism, thin film deposition equipment, wafer lifting method and computer-readable storage medium provided by the present invention can be used to improve the wafer transfer efficiency by controlling the lifting and lowering speed of the wafer lifting mechanism between the wafer transfer position and the process position, and to reduce the impact force generated at the moment when the support part contacts the wafer, thereby improving the performance of the thin film deposited on the wafer surface.

[0066] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art.

[0067] The steps of the method or algorithm described in conjunction with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of the two. The software module may reside in a RAM memory, a flash memory, a ROM memory, an EPROM memory, an EEPROM memory, a register, a hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to a processor so that the processor can read and write information from / to the storage medium. In an alternative, a storage medium may be integrated into a processor. The processor and the storage medium may reside in an ASIC. The ASIC may reside in a user terminal. In an alternative, the processor and the storage medium may reside in a user terminal as discrete components.

[0068] In one or more exemplary embodiments, the functions described may be implemented in hardware, software, firmware, or any combination thereof. If implemented as a computer program product in software, each function may be stored on or transmitted by a computer-readable medium as one or more instructions or codes. Computer-readable media include both computer storage media and communication media, including any medium that facilitates the transfer of a computer program from one place to another. Storage media may be any available medium that can be accessed by a computer. As an example and not limitation, such a computer-readable medium may include RAM, ROM, EEPROM, CD-ROM or other optical disk storage, disk storage or other magnetic storage device, or any other medium that can be used to carry or store the desired program code in the form of an instruction or data structure and can be accessed by a computer. Any connection is also properly referred to as a computer-readable medium. For example, if the software is transmitted from a website, a server, or other remote source using a coaxial cable, a fiber optic cable, a twisted pair, a digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwaves, the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwaves are included in the definition of the medium. Disk and disc as used herein include compact disc (CD), laser disc, optical disc, digital versatile disc (DVD), floppy disk and Blu-ray disc, wherein disk often reproduces data magnetically, while disc reproduces data optically with lasers. Combinations of the above should also be included within the scope of computer-readable media.

[0069] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A wafer lifting mechanism, characterized in that: include: at least one supporting portion, a first end of which is connected to the driving portion and a second end of which is used to support the wafer; as well as The driving unit is configured to: in the process of transferring the wafer, first drive the at least one supporting unit to approach the wafer at a first speed, and decelerate after reaching a preset first distance from the wafer, so that the at least one supporting unit contacts and carries the wafer at a second speed less than a preset first speed threshold; And after the process of transferring the wafer, the at least one supporting part is driven to lift the wafer to a preset process position.

2. The wafer lifting mechanism according to claim 1, characterized in that: The first distance corresponds to a preset first acceleration, and the step of first driving the at least one supporting part to approach the wafer at a first speed and decelerating after reaching the preset first distance from the wafer so that the at least one supporting part contacts and carries the wafer at a second speed less than the preset first speed threshold comprises: driving the at least one supporting part to perform uniform acceleration motion toward a first direction close to the wafer with the first acceleration; In response to the at least one supporting part arriving at the first distance from the wafer, the at least one supporting part is driven with the first acceleration to perform a uniform deceleration motion in a first direction close to the wafer, so that the at least one supporting part contacts and supports the wafer at a second speed less than the first speed threshold.

3. The wafer lifting mechanism according to claim 2, characterized in that: The first speed threshold is determined according to the maximum impact speed that the wafer is allowed to withstand, or The first speed threshold is zero.

4. The wafer lifting mechanism according to claim 1, characterized in that: The process position is higher than the wafer transfer position for transferring the wafer, and the step of driving the at least one support part to lift the wafer to the preset process position includes: Driving the at least one supporting portion to rise at a third speed so that the wafer is separated from the robot arm adsorbing the wafer, wherein the third speed is determined according to the maximum adsorption force that the wafer is allowed to withstand; and In response to the at least one supporting part arriving at a preset second distance from the sheet transfer position, the at least one supporting part is driven to continue to rise to the process position at a fourth speed, wherein the fourth speed is greater than the third speed.

5. The wafer lifting mechanism according to claim 4, characterized in that: The step of driving the at least one supporting part to rise at a third speed so as to separate the wafer from the robot arm on which the wafer is adsorbed comprises: The at least one supporting part is driven to rise at a preset second acceleration so that the wafer is separated from the robot arm on which it is adsorbed, wherein the second acceleration is determined according to the maximum adsorption force that the wafer is allowed to withstand.

6. The wafer lifting mechanism according to claim 1, characterized in that: The driving unit is further configured as: After the processing of the wafer is completed, the at least one supporting part is driven to lift the wafer back to the wafer transfer position so that the robot can absorb and transfer the wafer.

7. The wafer lifting mechanism according to claim 1, characterized in that: The wafer lifting mechanism comprises a plurality of the driving parts, and the at least one supporting part comprises a plurality of wafer supporting rods, wherein the lower end of each wafer supporting rod is respectively connected to one of the driving parts, and the upper end thereof passes through the corresponding supporting rod through hole on the lower substrate to contact and carry the wafer, or The wafer lifting mechanism comprises at least one driving part, and the at least one supporting part comprises a lifting support plate and a plurality of wafer supporting rods, wherein the lifting support plate is connected to at least one driving part, and the lower end of each wafer supporting rod can detachably contact the upper surface of one lifting support plate, and the upper end thereof passes through the corresponding supporting rod through hole on the lower substrate to contact and carry the wafer, or The wafer lifting mechanism comprises a plurality of driving parts, and the at least one supporting part comprises an edge ring and a plurality of lifting rods, wherein the edge ring is used to contact and carry the wafer, and the lower end of each lifting rod is connected to one of the driving parts, and the upper end thereof passes through the corresponding rod through hole on the lower substrate, or bypasses the lower substrate from the periphery to connect to the edge ring, or The wafer lifting mechanism includes a plurality of driving parts, and the at least one supporting part includes an edge ring and a plurality of lifting rods, wherein the edge ring is used to contact and support the wafer, and the upper end of each lifting rod is connected to a driving part, and the lower end thereof passes through the corresponding rod through hole on the upper substrate, or bypasses the upper substrate from the periphery to connect to the edge ring.

8. The wafer lifting mechanism according to claim 7, characterized in that: The upper substrate is a shower head and / or a heating plate of a thin film deposition device. The upper substrate is a shower head and / or a heating plate of the thin film deposition device.

9. A thin film deposition device, characterized in that: include: A process chamber, configured with an upper substrate and / or a lower substrate, for performing a thin film deposition process on a wafer, wherein the upper substrate is a shower head and / or a heating plate; and The wafer lifting mechanism according to any one of claims 1 to 8 is arranged at the upper part or the lower part of the process chamber, and is used to lift the wafer.

10. A wafer lifting method, characterized in that: include: In the process of transferring the wafer, at least one supporting part is first driven to approach the wafer at a first speed, and then decelerated after reaching a preset first distance from the wafer, so that the at least one supporting part contacts and carries the wafer at a second speed less than a preset first speed threshold; as well as After the wafer is introduced, the at least one supporting part is driven to lift the wafer to a preset process position.

11. A computer-readable storage medium having computer instructions stored thereon, characterized in that: When the computer instructions are executed by the processor, the wafer lifting method as claimed in claim 10 is implemented.

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