Substrate processing apparatus, method for manufacturing semiconductor device, and program

Abstract

The present invention is provided with: a processing container capable of processing a substrate to be processed; a substrate mounting table on which the process substrate can be mounted; and a control unit capable of performing control such that, after the processing of the processing substrate, when the temperature in the processing container is higher than the temperature at which the processing container is cleaned, a cooling substrate having an outer peripheral length shorter than that of the processing substrate is placed on the substrate placement table to perform a cooling process in the processing container, and when the temperature in the processing container is higher than the temperature at which the processing container is cleaned. The cleaning process is performed after the temperature in the processing container reaches a temperature at which the cleaning process can be performed.

Description

Technical Field

[0001] The present invention relates to a substrate processing device, a method for manufacturing a semiconductor device, and a program. Background Art

[0002] Conventionally, as an example of a substrate processing apparatus, a substrate processing apparatus as described in Patent Document 1 is known.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2010-153453 Summary of the invention

[0006] Problems to be solved by the invention

[0007] In a substrate processing apparatus, a cleaning process is sometimes performed in a processing container. When the temperature during substrate processing is higher than the temperature during cleaning, the temperature in the processing container needs to be cooled to the temperature during cleaning. If the temperature of the substrate mounting table is high, it may take time to cool down the processing container.

[0008] The present invention provides a technology for rapidly cooling a processing container and improving the production efficiency of a substrate.

[0009] Means used to solve problems

[0010] According to one embodiment of the present invention, the following technology is provided, which comprises: a processing container, which can process a processing substrate; a substrate mounting table, which can mount the above-mentioned processing substrate; and a control unit, which can perform the following control: after the processing of the above-mentioned processing substrate, when the temperature in the above-mentioned processing container is higher than the temperature of the cleaning treatment in the above-mentioned processing container, a cooling substrate with a shorter outer circumference than the above-mentioned processing substrate is mounted on the above-mentioned substrate mounting table to perform cooling treatment in the above-mentioned processing container, and the above-mentioned cleaning treatment is performed after the temperature in the above-mentioned processing container reaches a temperature at which the above-mentioned cleaning treatment can be performed.

[0011] Effects of the Invention

[0012] As described above, according to the present invention, the processing container can be rapidly cooled, and the production efficiency of the substrate can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a top view showing a substrate processing apparatus as one embodiment of the present invention.

[0014] Figure 2 It is a cross-sectional view showing a substrate processing apparatus as one embodiment of the present invention.

[0015] Figure 3 Yes means Figure 1 A cross-sectional view of the structure of a processing furnace is shown.

[0016] Figure 4 Yes means Figure 1 A cross-sectional view of the structure of a cooling unit for cooling a substrate is shown.

[0017] Figure 5 It is a block diagram representing a control system.

[0018] Fig. 6A It is a cross-sectional view showing a film formed on a base.

[0019] Figure 6B It is a cross-sectional view showing the relationship among a processing substrate, a first cooling substrate, a second cooling substrate, and a film diameter.

[0020] Figure 7 This is an explanatory diagram showing the processing process.

[0021] Figure 8 It is a flowchart which shows a process.

[0022] Fig. 9 It is a flowchart which shows a process.

[0023] Fig.10 It is a flowchart which shows a process.

[0024] Fig.11 It is a flowchart which shows a process. DETAILED DESCRIPTION

[0025] Hereinafter, with respect to one embodiment of the present invention, reference is made to Figures 1 to 11 In addition, the drawings used in the following description are only schematic diagrams, and the size relationship of each element, the ratio of each element, etc. shown in the drawings may not be consistent with the actual structure. Moreover, the size relationship of each element and the ratio of each element may not be consistent between multiple drawings. Moreover, in each figure, the same element reference numeral is given to the same structure.

[0026] [Structure of Substrate Processing Apparatus 1]

[0027] Figure 1 , Figure 2 The front, back, left, and right shown correspond to the front, back, left, and right in the following description. Figure 1 , Figure 2 Respectively indicate from Figure 2 , Figure 1 The structure of the substrate processing apparatus 1 is viewed from the directions of arrows Y and X.

[0028] In addition, in the substrate processing apparatus 1, a FOUP (front opening unified pod; wafer box) is used as a carrier for conveying substrates such as wafers.

[0029] like Figure 1 , Figure 2 As shown, the substrate processing apparatus 1 comprises a first conveying chamber 103 having a loading lock chamber structure capable of withstanding a pressure (negative pressure) less than atmospheric pressure such as a vacuum state. The frame 101 of the first conveying chamber 103 is formed into a box shape which is hexagonal in plan view and has closed upper and lower ends.

[0030] A first wafer transfer machine (vacuum transfer device) 112 as an example of a vacuum transfer device for transferring a processing substrate (wafer) 200 under negative pressure (vacuum) is provided in the first transfer chamber 103. The processing substrate 200 of this embodiment is used as a wafer of a semiconductor device.

[0031] The substrate 200 to be processed used in the substrate processing apparatus 1 of the present embodiment has a circular shape when viewed from above, but may have a shape other than a circle (rectangular, hexagonal, etc.).

[0032] In addition, when the top view shape of the processing substrate 200 is circular, the outer circumference is obtained by outer diameter × π. Hereinafter, the outer circumferences of the processing substrate 200, and the first cooling substrate 300L and the second cooling substrate 300S described later are respectively referred to as the outer diameters of the processing substrate 200, the first cooling substrate 300L, and the second cooling substrate 300S, and the size relationship is explained.

[0033] like Figure 2 and Figure 5 As shown, the first wafer transfer machine 112 includes a rotation mechanism 112A and a transfer mechanism 112B, and is moved up and down while maintaining the airtightness of the first transfer chamber 103 by means of an elevator 115 as an elevation mechanism.

[0034] like Figure 1 , Figure 2 As shown, among the six side walls of the frame 101, the two side walls located on the front side are connected to the first transfer chamber 103 via gate valves 131 and 127, respectively, and are respectively constructed as load lock chamber structures capable of withstanding negative pressure.

[0035] Furthermore, a substrate placement table 140 for the carry-in chamber is provided in the preparation chamber 122 , and a substrate placement table 141 for the carry-out chamber is provided in the preparation chamber 123 .

[0036] In addition, the so-called "substrate" here corresponds to any one of the processing substrate 200, the first cooling substrate 300L, and the second cooling substrate 300S described later. Therefore, the processing substrate 200, the first cooling substrate 300L, and the second cooling substrate 300S described later can be placed on the substrate placement table 140 and the substrate placement table 141.

[0037] A second transfer chamber 121 used at substantially atmospheric pressure is connected to the front side of the preliminary chamber 122 and the preliminary chamber 123 via gate valves 128 and 129 .

[0038] The second transfer chamber 121 is provided with a second wafer transfer machine (atmospheric transfer device) 124 as an example of an atmospheric transfer device for transferring the processed substrate 200 .

[0039] like Figure 5 As shown, the second wafer transfer machine 124 includes a rotating mechanism 124A, and is provided in the second transfer chamber 121 through an elevator 126 (see Figure 2 ) and is lifted and lowered, and a linear actuator 132 (see Figure 2 ) and moves back and forth in the left and right directions.

[0040] like Figure 1 As shown, an orientation plane alignment device 106 is provided on the left side of the second conveying chamber 121 .

[0041] In addition, if Figure 2 As shown, a cleaning unit 118 for supplying clean air is provided at an upper portion of the second conveying chamber 121 .

[0042] like Figure 1 , Figure 2 As shown, the frame 125 of the second transfer chamber 121 is provided with: a wafer loading and unloading port 134 for loading and unloading the processing substrate 200 into and out of the second transfer chamber 121 ; a cover 142 for closing the wafer loading and unloading port 134 ; and a wafer box opener 108 .

[0043] The pod opener 108 includes a cap of the pod 100 which is placed on the IO stage 105 , and a cap opening and closing mechanism 136 which opens and closes a cover 142 which closes the wafer loading and unloading port 134 .

[0044] The cassette opener 108 opens and closes the cap of the cassette 100 placed on the IO stage 105 and the cover 142 that closes the wafer loading and unloading port 134 by using the cap opening and closing mechanism 136 , thereby allowing the wafers in the cassette 100 to be loaded and unloaded.

[0045] In addition, the wafer cassette 100 is supplied to and discharged from the IO stage 105 by a conveyor device (not shown).

[0046] like Figure 1 As shown, among the six side walls of the frame 101, two side walls located on the back side are adjacently connected to a first processing furnace 202 (see Figure 3 ) and the second processing furnace 137. The first processing furnace 202 and the first transfer chamber 103 are connected via a gate valve 130.

[0047] The first processing furnace 202 and the second processing furnace 137 are both constituted by cold wall type processing furnaces.

[0048] Furthermore, the remaining two opposing side walls among the six side walls of the housing 101 are connected to the cooling substrate cooling unit 300 and the processing substrate cooling unit 139 , respectively.

[0049] The cooling substrate cooling unit 300 can cool a first cooling substrate 300L and a second cooling substrate 300S described later, and the processing substrate cooling unit 139 can cool the processed processing substrate 200. The structure of the cooling substrate cooling unit 300 will be described later.

[0050] In addition, in this embodiment, the top view shape of the frame 101 is hexagonal, but is not limited to this shape. For example, the shape of the frame 101 can be different to match the structures of the first processing furnace 202, the second processing furnace 137, the cooling substrate cooling unit 300, the preparatory chamber 122, and the preparatory chamber 123.

[0051] [Structure of the first processing furnace 202]

[0052] Next, the structure of the first processing furnace 202 will be described.

[0053] In addition, for the purpose of specificity and clarity of description, the structure of the first processing furnace 202 of the substrate processing apparatus 1 will be described below, but the structure of the other second processing furnace 137 is also the same.

[0054] like Figure 3 As shown, the substrate processing device 1 (refer to Figure 1 , Figure 2 ) is, as an example, a single-wafer type CVD furnace (single-wafer type cold-wall CVD furnace), and includes a chamber 223 as an example of a processing container formed by a processing chamber 201 for processing a processing substrate 200 serving as a processing container.

[0055] The chamber 223 is formed by combining an upper cap 224, a cylindrical cup 225, and a lower cap 226 so as to have a cylindrical shape with both upper and lower end surfaces closed.

[0056] In the middle part of the cylindrical wall of the cylindrical cup 225 of the chamber 223, a wafer loading and unloading port 250 is provided which is extended horizontally and is opened and closed by a gate valve 244. The wafer loading and unloading port 250 is formed so that a processed substrate, i.e., a processing substrate 200, can be loaded and unloaded in and out of the processing chamber 201 by a wafer transfer device (not shown).

[0057] That is, the processing substrate 200 is conveyed to the wafer loading / unloading port 250 while being mechanically supported by the wafer transfer device from below, and is carried in and out of the processing chamber 201 .

[0058] An exhaust port 235 connected to an exhaust device (not shown) including a vacuum pump is provided on the upper wall of the cylindrical cup 225 facing the wafer loading and unloading port 250 so as to communicate with the processing chamber 201 . The exhaust port 235 is used to exhaust the processing chamber 201 .

[0059] In addition, an exhaust buffer space 249 communicating with the exhaust port 235 is formed in an annular shape at the upper portion of the cylindrical cup 225 .

[0060] The exhaust buffer space 249 exhausts the entire surface of the processing substrate 200 uniformly.

[0061] A shower head 236 for supplying a processing gas is integrally assembled to the upper cap 224 of the chamber 223 .

[0062] That is, the gas supply pipe 232 is inserted into the top wall of the upper cover cap 224, and each gas supply pipe 232 is connected to a gas supply device consisting of an opening and closing valve 243 and a flow control device (mass flow controller = MFC) 241 in order to introduce processing gases A and B such as raw gas or flushing gas.

[0063] On the lower surface of the upper cap 224, a plate 240 formed in a disc shape is fixed horizontally at a distance from the gas supply pipe 232, and a plurality of gas blowing ports (blowout ports) 247 are evenly provided on the plate 240 over the entire surface to allow gas to flow in the upper and lower spaces.

[0064] A buffer chamber 237 is formed by the inner space divided by the inner side surface of the upper cover cap 224 and the upper surface of the plate 240. The buffer chamber 237 allows the processing gas 230 introduced into the gas supply pipe 232 to be evenly diffused as a whole and blown out evenly and in a shower shape from each gas blowing outlet 247.

[0065] An insertion hole 278 is formed circularly at the center of the lower cover 226 of the chamber 223 , and a support shaft 276 formed in a cylindrical shape is inserted into the processing chamber 201 from below on the center line of the insertion hole 278 .

[0066] The support shaft 276 is raised and lowered by a lifting mechanism (lifting unit) 268 using a cylinder device or the like.

[0067] The heating unit 251 is concentrically disposed at the upper end of the support shaft 276 and is fixed horizontally. The heating unit 251 is raised and lowered by the support shaft 276 .

[0068] That is, the heating unit 251 includes a support plate 258 formed in a disk shape, and the support plate 258 is fixed to the upper end opening of the support shaft 276 in a concentric manner.

[0069] On the upper surface of the support plate 258, a plurality of electrodes 253 are vertically erected and serve as supports, and between the upper ends of these electrodes 253, a heater (heating unit) 207 formed in a circular plate shape and divided into a plurality of areas for control is bridged and fixed.

[0070] The electric wiring 257 for these electrodes 253 is inserted into the hollow portion of the support shaft 276 .

[0071] Furthermore, a reflection plate 252 is fixedly installed on a support plate 258 below the heater 207 to reflect the heat radiated from the heater 207 toward the susceptor 217 side as an example of a substrate mounting table, thereby realizing efficient heating.

[0072] Furthermore, a radiation thermometer 264 as a temperature detection unit is introduced from the lower end of the support shaft 276 , and the front end of the radiation thermometer 264 is provided with a predetermined gap with respect to the back surface of the base 217 .

[0073] The radiation thermometer 264 is composed of a quartz rod and an optical fiber, and detects the radiation light emitted from the back side of the base 217 (for example, the back side corresponding to the divided area of ​​the heater 207) and calculates the back side temperature of the base 217 (in addition, the temperature of the processing substrate 200 can also be calculated based on the relationship between the temperatures of the processing substrate 200 and the base 217 obtained in advance).

[0074] The degree of heating by the heater 207 is controlled based on the temperature of the susceptor 217 calculated in this way.

[0075] On the outside of the support shaft 276 of the insertion hole 278 of the lower cover cap 226, a rotating shaft 277 formed in a cylindrical shape with a larger diameter than the support shaft 276 is concentrically arranged and inserted into the processing chamber 201 from below. The rotating shaft 277 is raised and lowered together with the support shaft 276 by using a lifting mechanism 268 such as a cylinder device.

[0076] The rotating drum 227 is concentrically arranged on the upper end of the rotating shaft 277 and is fixed horizontally. The rotating drum 227 is rotated by the rotating shaft 277 .

[0077] That is, the rotating drum 227 includes a rotating plate 229 formed as a flat plate in a donut shape, and a rotating cylinder 228 formed in a cylindrical shape. The inner peripheral edge of the rotating plate 229 is fixed to the upper end opening of the cylindrical rotating shaft 277, and the rotating cylinder 228 is fixed concentrically on the outer peripheral edge of the upper surface of the rotating plate 229.

[0078] The upper end of the rotating cylinder 228 of the rotating drum 227 is covered with a susceptor 217 as an example of a substrate mounting table formed in a disk shape by silicon carbide, aluminum nitride, or the like so as to close the upper end opening of the rotating cylinder 228 .

[0079] like Figure 3 As shown, a wafer lifting device 275 is provided in the rotating drum 227 .

[0080] The wafer lifting device 275 is constructed such that a heater side protrusion pin 266A, a heater side protrusion pin 266B, and a rotating side protrusion pin 274 are protrudingly provided on two lifting rings formed in a circular ring shape, and the lower lifting ring (rotating side ring) 269 is arranged on the rotating plate 229 of the rotating drum 227 to be concentric with the support shaft 276.

[0081] On the lower surface of the rotating side ring 269, a plurality of (for example, 3) rotating side protruding pins 274 are arranged at equal intervals in the circumferential direction, and these rotating side protruding pins 274 are protruded downward in the vertical direction. Each rotating side protruding pin 274 is arranged on the rotating plate 229 on a line that is concentric with the rotating cylinder 228, and is slidably embedded in each guide hole 255 opened in the vertical direction.

[0082] The lengths of the rotating-side protruding pins 274 are equal to each other so that the rotating-side ring 269 can protrude horizontally, and are set to correspond to the protrusion amount of the processing substrate 200 from the substrate mounting table.

[0083] The lower end of each rotating-side protruding pin 274 is opposed to the bottom surface of the processing chamber 201 , that is, the upper surface of the lower cover cap 226 in a contactable and detachable manner.

[0084] On the support plate 258 of the heating unit 251 , another lifting ring (heater side ring) 273 formed in a circular ring shape is arranged concentrically with the support shaft 276 .

[0085] On the lower surface of the heater side ring 273, a plurality of (for example, 3) heater side protruding pins 266B are arranged at equal intervals in the circumferential direction, and these heater side protruding pins 266B are protruded downward in the vertical direction. Each heater side protruding pin 266B is arranged on a line concentric with the support shaft 276 on the support plate 258, and is slidably embedded in each guide hole 254 opened in the vertical direction.

[0086] The lengths of the heater-side protruding pins 266B are set to be equal to each other so that the heater-side ring 273 can protrude horizontally, and the lower ends of the heater-side protruding pins 266B face the upper surface of the rotating-side ring 269 with an appropriate gap therebetween.

[0087] That is, the heater-side protruding pins 266B are configured not to interfere with the rotating-side ring 269 when the rotating drum 227 rotates.

[0088] In addition, on the upper surface of the heater side ring 273, multiple (for example, 3) heater side protrusion pins 266A are arranged at equal intervals in the circumferential direction, and these heater side protrusion pins 266A are protruded upward in the vertical direction, and the upper ends of the heater side protrusion pins 266A are opposite to the insertion holes 256 of the heater 207 and the base 217.

[0089] The heater-side protrusion pins 266A are set to have the same length so as to be inserted through the heater 207 and the insertion hole 256 of the susceptor 217 from below and to horizontally float the processing substrate 200 placed on the susceptor 217 .

[0090] The lengths of the heater-side protruding pins 266A are set so that their upper ends do not protrude from the upper surface of the heater 207 when the heater-side ring 273 is in contact with the support plate 258 .

[0091] That is, the heater-side protruding pins 266A are configured not to interfere with the base 217 when the rotary drum 227 rotates, and not to hinder heating by the heater 207 .

[0092] like Figure 3 As shown, the chamber 223 is horizontally supported by a plurality of pillars 280 .

[0093] Each lifting block 281 is fitted to each of the pillars 280 so as to be freely movable upward and downward, and a lifting platform 282 is provided between the lifting blocks 281 so as to be movable upward and downward by a lifting driving device (not shown) such as a cylinder device.

[0094] A substrate stage rotating mechanism (rotating unit) 267 is provided on the lifting table 282 , and a bellows 279 is interposed between the substrate stage rotating mechanism 267 and the chamber 223 to airtightly seal the outside of the rotating shaft 277 .

[0095] A brushless DC motor is used for the substrate stage rotating mechanism 267 provided on the lifting table 282 , and the output shaft (motor shaft) is formed as a hollow shaft to constitute the rotating shaft 277 .

[0096] The substrate stage rotating mechanism 267 includes a housing 283 , and the housing 283 is mounted on the lifting table 282 in a vertically upward direction.

[0097] A stator 284 composed of an electromagnet (coil) is fixed to the inner peripheral surface of the housing 283 .

[0098] That is, the stator 284 is formed by a coil wire (enameled copper wire) 286 wound around an iron core (core) 285 .

[0099] A conductive wire (not shown) is inserted through a through hole (not shown) provided in the side wall of the housing 283 and is electrically connected to the coil wire 286. The stator 284 forms a rotating magnetic field by supplying power to the coil wire 286 from a driver of a brushless DC motor (not shown) through the conductive wire.

[0100] A rotor 289 is concentrically arranged inside the stator 284 with a gap (clearance) provided therebetween. The rotor 289 is rotatably supported by the housing 283 via upper and lower ball bearings 293 .

[0101] That is, the rotor 289 includes a cylindrical body 290 , an iron core (core) 291 , and a plurality of permanent magnets 292 , and the rotating shaft 277 is fixed to the body 290 via a bracket 288 so as to rotate integrally therewith.

[0102] The iron core 291 is fitted and fixed in the main body 290 , and a plurality of permanent magnets 292 are fixed to the outer periphery of the iron core 291 at equal intervals in the circumferential direction.

[0103] The core 291 and the permanent magnets 292 form a plurality of magnetic poles arranged in a ring shape, and the rotating magnetic field formed by the stator 284 is divided into magnetic fields of the plurality of magnetic poles (permanent magnets 292 ), thereby rotating the rotor 289 .

[0104] The upper and lower ball bearings 293 are respectively provided at the upper and lower ends of the body 290 of the rotor 289 , and gaps for absorbing thermal expansion of the body 290 are appropriately set in the upper and lower ball bearings 293 .

[0105] In order to absorb the thermal expansion of the body 290 and suppress the shaking to a minimum, the clearance of the ball bearing 293 is set to 5 μm to 50 μm (5 μm or more and 50 μm or less).

[0106] The clearance of a ball bearing refers to a clearance generated on the opposite side when a ball approaches one side of the outer rail or the inner rail.

[0107] In addition, in the present embodiment, the expression of a numerical range such as "5μ to 50μm" means that the lower limit and the upper limit are included in the range. Therefore, for example, "5μ to 50μm" means "5μm or more and 50μm or less". The same applies to other numerical ranges.

[0108] On the facing surfaces of the stator 284 and the rotor 289, the outer and inner surrounding parts constituting the double cylindrical wall, namely the cover bodies 287, are facing each other and are respectively fixed on the inner circumferential surface of the outer shell 283 and the outer circumferential surface of the main body 290, and a specified gap (clearance) is set between each cover body 287.

[0109] The cover 287 is formed of a non-magnetic body, i.e. stainless steel, into a cylindrical shape with an extremely thin wall thickness, and is securely and evenly fixed to the housing 283 and the main body 290 across the entire circumference by electron beam welding at the upper and lower opening ends of the cylinder.

[0110] Because the cover 287 is made of a non-magnetic material, i.e., stainless steel, and is extremely thin, it not only prevents the magnetic flux from diffusing and prevents the motor efficiency from decreasing, but also prevents the coil wire 286 of the stator 284 and the permanent magnet 292 of the rotor 289 from being corroded. In addition, it effectively prevents contamination of the interior of the processing chamber 201 caused by the coil wire 286, etc.

[0111] The stator 284 is completely isolated from the inside of the processing chamber 201 which is a vacuum environment by surrounding the stator 284 in an airtight sealed state with the cover 287 .

[0112] In addition, a magnetic rotary encoder 294 is provided in the substrate stage rotating device.

[0113] That is, the magnetic rotary encoder 294 includes a detection ring 296 as a detection object including a magnetic body, and the detection ring 296 is formed into a circular ring shape using a magnetic body such as iron. A plurality of teeth as detection parts are arranged in a ring shape on the outer periphery of the detection ring 296.

[0114] A magnetic sensor 295 for detecting each tooth, which is a detection portion of the detection ring 296 , is provided at a position of the housing 283 that faces the detection ring 296 .

[0115] The gap (sensor interval) between the front end surface of the magnetic sensor 295 and the outer peripheral surface of the detection ring 296 is set to 0.06 mm to 0.17 mm (0.06 mm or more and 0.17 mm or less).

[0116] The magnetic sensor 295 detects the change in magnetic flux at these opposing positions as the detection ring 296 rotates using a magnetoresistive element.

[0117] The detection result of the magnetic sensor 295 is transmitted to a drive control unit 422 (see FIG. 2 ) which controls the brushless DC motor (substrate mounting table rotation mechanism 267) described later. Figure 3 , 5 ) and is used for position recognition of the base 217 and for controlling the rotation amount of the base 217.

[0118] In addition, the pressure of the processing chamber 201 is monitored using a pressure gauge (not shown) (connected to the control unit 400 described later). For example, when the processing substrate 200 is processed with processing gases A and B such as raw gas or flushing gas, the pressure in the processing chamber 201 is maintained at a specified level by controlling MFC241 and an exhaust device (not shown).

[0119] (Control Unit 400)

[0120] like Figure 5 As shown, the substrate processing apparatus 1 of the present embodiment includes a control unit 400 that controls each part of the substrate processing apparatus 1 .

[0121] The control unit 400 includes at least a calculation unit (CPU) 400 a , a temporary storage unit (RAM) 400 b , a storage unit 400 c , and an I / O port 400 d .

[0122] The control unit 400 is connected to each structure of the substrate processing device 1 via the I / O port 400d, and through the operation unit 406 or the communication unit 404, according to instructions from an external connection device (not shown), calls a program or process from the storage unit 400c, and controls the operation of each structure according to its content.

[0123] In addition, the control unit 400 can be configured as a dedicated computer or a general-purpose computer. For example, a computer-readable external storage device (e.g., a magnetic disk such as a magnetic tape, a floppy disk or a hard disk, an optical disk such as a CD or a DVD, an optical magnetic disk such as an MO, a semiconductor memory such as a USB memory (USB Flash Drive) or a memory card) 402 storing the above-mentioned program is prepared, and the program is installed in a general-purpose computer using the external storage device 402, thereby configuring the control unit 400 of this embodiment.

[0124] In addition, the means for supplying the program to the computer is not limited to the case of supplying via the external storage device 402. For example, a communication means such as the Internet or a dedicated line may be used, or the control unit 400 may receive information via the communication unit 404 to supply the program without passing through the external storage device 402. Furthermore, the control unit 400 may be instructed using the operation unit 406 such as a keyboard or a touch panel.

[0125] In addition, the storage unit 400c and the external storage device 402 constitute a computer-readable recording medium. Hereinafter, these are collectively referred to as recording media. In addition, when the term recording medium is used in this specification, there is a case where only the storage unit 400c is included, only the external storage device 402 is included, or both are included.

[0126] like Figure 5 As shown, the control unit 400 is connected to the process control unit 408 and the transport control unit 410 via the I / O port 400d.

[0127] The process control unit 408 is connected to Figure 3 Also shown are a gas control unit 420, a heating control unit 424, and a temperature detection unit 426. Figure 3 As shown, the gas control unit 420, the drive control unit 422, the heating control unit 424, and the temperature detection unit 426 are related to the control of each unit of the first processing furnace 202, and these may be collectively referred to as a main control unit.

[0128] Figure 5 The gas control unit 420 shown includes the MFC 241 , the on-off valve 243 , an exhaust device (not shown) connected to the processing chamber 201 , and a pressure gauge (not shown) for measuring the pressure in the processing chamber 201 .

[0129] The drive control section 422 includes a substrate stage rotating mechanism (rotating unit) 267 , a lifting mechanism (lifting unit) 268 , and the like.

[0130] The heating control unit 424 includes a heater (heating unit) 207 and the like.

[0131] The temperature detection unit 426 includes a radiation thermometer (temperature detection means) 264 and the like.

[0132] The transport control unit 410 is connected to the first wafer transfer machine (vacuum transfer device) 112, the second wafer transfer machine (atmospheric transfer device) 124, the lifting mechanism 328 that lifts and lowers the support member 322 of the cooling substrate cooling unit 300 described later, and the gate valve 310. The transport control unit 410 can control the first wafer transfer machine (vacuum transfer device) 112, the second wafer transfer machine (atmospheric transfer device) 124, and the lifting mechanism 328.

[0133] [Structure of Cooling Substrate Cooling Unit 300]

[0134] like Figure 4 As shown, the cooling substrate cooling unit 300 includes a box-shaped frame 306 having a storage chamber 304 formed therein. The storage chamber 304 is a space in which the first cooling substrate 300L and the second cooling substrate 300S to be cooled are arranged and cooled.

[0135] like Figure 1 and Figure 4 As shown, the substrate cooling unit 300 is provided adjacent to the first transfer chamber 103 .

[0136] A cooling substrate loading and unloading port 308 is provided on the side of the frame 306. The cooling substrate loading and unloading port 308 is used to load and unload the first cooling substrate 300L and the second cooling substrate 300S between the first transfer chamber 103. In addition, the cooling substrate loading and unloading port 308 is provided with an openable and closable gate valve 310. The gate valve 310 is opened by Figure 5 The control unit 400 shown controls the opening and closing.

[0137] In addition, the specifications of the first cooling substrate 300L and the second cooling substrate 300S will be described later.

[0138] like Figure 4 As shown, a supply pipe 312 for supplying cooling gas into the accommodation chamber 304 and an exhaust pipe 314 for exhausting the gas in the accommodation chamber 304 are connected to the housing 306 .

[0139] At the upstream end of the supply pipe 312, a cooling gas supply unit 316 including a gas tank for supplying cooling gas may be provided, for example. A supply valve 318 is provided in the middle of the supply pipe 312. The supply valve 318 is provided by Figure 5 The control unit 400 shown controls the opening and closing.

[0140] As an example, the supply system 319 is constituted by the supply pipe 312 and the supply valve 318. In addition, the cooling gas supply unit 316 may be included in the supply system 319.

[0141] In addition, the supply system 319 may be a component constituting the substrate processing apparatus 1 of the present invention, or may not be a component.

[0142] In this embodiment, in order to accelerate the cooling speed of the first cooling substrate 300L and the second cooling substrate 300S, cooling gas is supplied into the accommodation chamber 304 to forcibly cool the first cooling substrate 300L and the second cooling substrate 300S, but it is also possible not to use cooling gas but to perform natural air cooling inside the accommodation chamber 304. In addition, it is also possible not to provide a sealed box-shaped frame 306 for accommodating the first cooling substrate 300L and the second cooling substrate 300S but to perform natural air cooling on the first cooling substrate 300L and the second cooling substrate 300S in a space open to the atmosphere.

[0143] In addition, natural air cooling refers to cooling in a windless state without forced air (air, gas other than air, etc.) supplied from other places.

[0144] As an example, He gas or Ar gas is used as the cooling gas, but other gases may be used. The temperature of the cooling gas supplied to the inside of the housing 306 is lower than the temperature of the susceptor 217 which has reached a high temperature after the film forming process, and is preferably below room temperature (eg, 25° C.).

[0145] An exhaust valve 320 is provided in the middle of the exhaust pipe 314. The exhaust valve 320 is also controlled to be opened and closed by the control unit 400.

[0146] As an example, the exhaust system 321 is constituted by the exhaust pipe 314 and the exhaust valve 320. In addition, a vacuum pump (not shown) provided downstream of the exhaust pipe 314 may be included in the exhaust system 321.

[0147] In addition, the exhaust system 321 may be a component constituting the substrate processing apparatus 1 of the present invention, or may not be a component.

[0148] A support member 322 capable of supporting a plurality of first cooling substrates 300L and second cooling substrates 300S in multiple layers in the vertical direction is arranged inside the frame 306. The support member 322 is configured to include a plurality of pillars 324, and the ends of the first cooling substrate 300L and the second cooling substrate 300S are inserted into grooves 326 formed in the pillars 324, thereby supporting the first cooling substrate 300L and the second cooling substrate 300S.

[0149] also, Figure 4 The cooling substrate cooling unit 300 is only schematically described, and the number of the first cooling substrate 300L and the second cooling substrate 300S supported by the support member 322 is not limited to Figure 4Number of pieces shown.

[0150] The frame 306 is provided with a lifting mechanism 328 for lifting the support member 322 in the vertical direction.

[0151] Furthermore, when the first cooling substrate 300L and the second cooling substrate 300S are moved in and out between the cooling substrate cooling unit 300 and the first transfer chamber 103, the gate valve 310 is opened, and when the first cooling substrate 300L and the second cooling substrate 300S accommodated in the frame 306 are cooled, the gate valve 310 is closed and cooling gas is supplied into the frame 306. The gate valve 310 is also closed when the interior of the first transfer chamber 103 is made into a vacuum.

[0152] (Specifications of cooling substrate)

[0153] In the substrate processing apparatus 1 of this embodiment, as an example, there are prepared: a first cooling substrate 300L formed to have a smaller diameter than the processing substrate 200 and smaller than the inner diameter of the film 32; and a second cooling substrate 300S formed to have a smaller diameter than the first cooling substrate 300L. Figure 4 As shown, the first cooling substrate 300L and the second cooling substrate 300S are supported by a support 322 of the cooling substrate cooling unit 300 .

[0154] Fig. 6A 2 is a diagram illustrating a processing substrate 200 placed on a susceptor 217 and having a film 32 formed thereon. Figure 6B The diagram illustrates the susceptor 217 , the film 32 , the first cooling substrate 300L, and the second cooling substrate 300S.

[0155] Fig. 6A and Figure 6B In the example, if the diameter of the processing substrate 200 is set to D0, the inner diameter of the annular film 32 formed on the base 217 is set to D1, the outer diameter of the first cooling substrate 300L is set to D2, and the outer diameter of the second cooling substrate 300S is set to D3, the relationship D0>D1>D2>D3 is established.

[0156] In addition, regarding the processing substrate 200, the first cooling substrate 300L, and the second cooling substrate 300S of this embodiment, if the relationship of the area sizes when viewed from above is used for description, the area of ​​the processing substrate 200>the area of ​​the first cooling substrate 300L>the area of ​​the second cooling substrate 300S.

[0157] As an example, the outer diameters of the first cooling substrate 300L and the second cooling substrate 300S can be set within a range of 90% to 99% (90% to 99%) of the outer diameter of the processing substrate 200. Therefore, as an example, when the outer diameter of the processing substrate 200 is 300 mm, the outer diameter of the first cooling substrate 300L becomes 297 mm, and the outer diameter of the second cooling substrate 300S becomes 270 mm.

[0158] In the substrate processing apparatus 1 of the present embodiment, as an example, the diameter D0 of the processing substrate 200 is set to 300 mm, the diameter D2 of the first cooling substrate 300L is set to 290 mm, and the diameter D3 of the second cooling substrate 300S is set to 280 mm.

[0159] In addition, the inner diameter D1 of the film 32 can be obtained by testing (experimenting) in advance, and measuring the inner diameter of the film 32 actually formed on the base 217 after the film forming process of the processing substrate 200. Preferably, the film forming is performed multiple times, and based on the minimum value of the inner diameter D1 of the film 32, the diameter of the first cooling substrate 300L and the diameter of the second cooling substrate 300S are determined in a manner to be less than the minimum value.

[0160] When the outer diameter of the first cooling substrate 300L and the second cooling substrate 300S is less than 90% of the outer diameter of the processing substrate 200, when the cooling efficiency is reduced, the cleaning gas will be supplied from the inner diameter (inner periphery) of the film 32 during cleaning to the surface (upper surface) of the base 217 exposed between the outer diameter (outer periphery) of the first cooling substrate 300L or the second cooling substrate 300S, which may affect the surface of the base 217.

[0161] In addition, when the outer diameter of the first cooling substrate 300L and the second cooling substrate 300S is more than 99% of the outer diameter of the processing substrate 200, the peripheral portion of the substrate is placed on the annular film 32, and a space is formed between the central side portion of the first cooling substrate 300L or the second cooling substrate 300S and the base 217, so that the first cooling substrate 300L or the second cooling substrate 300S is not in close contact with the base 217, which may reduce the cooling efficiency of the base 217. Moreover, even during the cleaning process, since the peripheral portion of the substrate is placed on the film 32, a part of the film 32 is covered and hidden by the peripheral portion of the substrate, and the cleaning process of the film 32 may not be performed accurately.

[0162] In addition, the details of the cleaning process of the film 32 will be described later.

[0163] The first cooling substrate 300L and the second cooling substrate 300S used for cooling the susceptor 217 may be wafers commonly used in manufacturing semiconductor devices or may be dedicated wafers designed to be suitable for implementing the method of the present invention, as long as their outer circumference is shorter than that of the processing substrate 200 .

[0164] The first cooling substrate 300L and the second cooling substrate 300S used in the substrate processing apparatus 1 of the present embodiment are formed in a circular shape in a plan view similarly to the processing substrate 200 , and the surfaces (front surface and back surface) are formed flat (smooth and without irregularities).

[0165] As the material of the first cooling substrate 300L and the second cooling substrate 300S, it is preferred to use a material with high thermal conductivity and less likely to generate particles. As an example, metal parts such as aluminum, carbon parts, SiC, AlN, Al2O3 and other ceramic parts can be used. In addition, the material of the first cooling substrate 300L and the second cooling substrate 300S can also be the same material as the wafer commonly used in the manufacture of semiconductor devices.

[0166] The thickness of the first cooling substrate 300L and the second cooling substrate 300S may be the same as that of the processing substrate 200 , may be thicker than the processing substrate 200 , or may be thinner than the processing substrate 200 .

[0167] [Processing by Substrate Processing Apparatus 1]

[0168] The following is for Figures 1 to 3 Processing performed by the substrate processing apparatus 1 shown will be described.

[0169] First, the film forming process on the processing substrate 200 will be described.

[0170] As an example, in a state where 25 unprocessed substrates 200 are stored in the wafer cassette 100 , the wafer cassette 100 is transported to the substrate processing apparatus 1 that performs a processing step by the intra-step transport device.

[0171] like Figure 1 , Figure 2 As shown, the wafer cassette 100 conveyed is received from the intra-process conveying device and placed on the IO stage 105 .

[0172] The cap of the wafer cassette 100 and the cover 142 for opening and closing the wafer loading and unloading port 134 are removed by the cap opening and closing mechanism 136 , thereby opening the wafer loading and unloading port of the wafer cassette 100 .

[0173] When the wafer box 100 is opened by the wafer box opener 108 , the second wafer transfer machine 124 provided in the second conveying chamber 121 picks up the processing substrate 200 from the wafer box 100 , carries it into the preparation chamber 122 , and then transfers the processing substrate 200 to the substrate placement table 140 .

[0174] During this transfer operation, the gate valve 131 on the first transfer chamber 103 side is closed, and the negative pressure of the first transfer chamber 103 is maintained.

[0175] When the transfer of the processing substrate 200 to the substrate placement table 140 is completed, the gate valve 128 is closed, and the preparation chamber 122 is exhausted to a negative pressure by an exhaust device (not shown).

[0176] When the pressure of the preparation chamber 122 is reduced to a preset pressure value, the gate valves 131 and 130 are opened to allow the preparation chamber 122 , the first transfer chamber 103 , and the first processing furnace 202 to communicate with each other.

[0177] Next, the first wafer transfer machine 112 of the first transfer chamber 103 picks up the processing substrate 200 from the substrate placement table 140 and carries it onto the susceptor 217 in the first processing furnace 202 .

[0178] Next, a processing gas is supplied into the first processing furnace 202 , and a desired process is performed on the processing substrate 200 .

[0179] In addition, the details of the processing in the first processing furnace 202 will be described in further detail.

[0180] When the processing is completed in the first processing furnace 202 , the processed substrate 200 is carried out to the first transfer chamber 103 by the first wafer transfer machine 112 of the first transfer chamber 103 .

[0181] Next, the first wafer transfer machine 112 carries the processed substrate 200 carried out from the first processing furnace 202 into the processed substrate cooling unit 139 , and cools the processed wafer.

[0182] When transferring the processed substrate 200 to the processed substrate cooling unit 139 , the first wafer transfer machine 112 transfers the processed substrate 200 prepared in advance on the substrate placement table 140 of the preparation chamber 122 to the first processing furnace 202 as described above.

[0183] Then, a processing gas is supplied into the first processing furnace 202 , and a desired process is performed on the processing substrate 200 .

[0184] After a preset cooling time has elapsed in the processed substrate cooling unit 139 , the cooled processed substrate 200 is carried out from the processed substrate cooling unit 139 to the first transfer chamber 103 by the first wafer transfer machine 112 .

[0185] After the cooled processed substrate 200 is carried out from the processed substrate cooling unit 139 to the first transfer chamber 103 , the gate valve 127 is opened.

[0186] Next, when the first wafer transfer machine 112 transports the processed substrate 200 unloaded from the processed substrate cooling unit 139 to the preparation chamber 123 and transfers the processed substrate 200 to the substrate placement table 141 , the preparation chamber 123 is closed by the gate valve 127 .

[0187] When the preliminary chamber 123 is closed by the gate valve 127 , the pressure in the preliminary chamber 123 is substantially returned to the atmospheric pressure due to the inert gas.

[0188] When the pressure in the preparation chamber 123 returns to approximately atmospheric pressure, the gate valve 129 is opened, and the cover 142 closing the wafer loading and unloading port 134 corresponding to the preparation chamber 123 of the second transfer chamber 121 and the cap of the empty wafer box 100 placed on the IO stage 105 are opened by the wafer box opener 108 .

[0189] Next, the second wafer transfer machine 124 of the second transfer chamber 121 picks up the processed substrate 200 from the substrate placement table 141 , carries it out into the second transfer chamber 121 , and stores it in the wafer cassette 100 through the wafer loading / unloading port 134 of the second transfer chamber 121 .

[0190] By repeating the above-mentioned operations, wafers are processed sequentially by the substrate processing apparatus 1 .

[0191] When the storage of the 25 processed substrates 200 in the wafer cassette 100 is completed, the cap of the wafer cassette 100 and the cover 142 that closes the wafer loading / unloading port 134 are closed by the wafer cassette opener 108 .

[0192] The closed wafer cassette 100 is transported from the IO stage 105 to the next process by the intra-process transport device.

[0193] In the above description, the case of using the first processing furnace 202 and the processing substrate cooling unit 139 is taken as a specific example, but the wafer can be processed by the same operation even when the second processing furnace 137 is used.

[0194] (Processing in the First Processing Furnace 202)

[0195] Next, the first processing furnace 202 (see Figure 3 ) is further explained.

[0196] In order to make the description more specific and clear, the process in the first processing furnace 202 is described here, but the processes in other processing furnaces of the substrate processing apparatus 1 are also the same.

[0197] When the processed substrate 200 is carried in and out of the first processing furnace 202 , the rotating drum 227 and the heating unit 251 are lowered to the lower limit position by the rotating shaft 277 and the supporting shaft 276 .

[0198] Next, the lower ends of the rotating side protruding pins 274 of the wafer lifting device 275 protrude and engage with the bottom surface of the processing chamber 201 (the upper surface of the lower cover 226 ), so that the rotating side ring 269 rises relative to the rotating drum 227 and the heating unit 251 .

[0199] The ascending rotating-side ring 269 raises the heater-side protruding pins 266B of the heater-side ring 273 , thereby lifting the heater-side ring 273 .

[0200] When the heater side ring 273 is lifted, the three heater side protrusion pins 266A erected on the heater side ring 273 are inserted through the insertion holes 256 of the heater 207 and the susceptor 217 , supporting the processing substrate 200 placed on the upper surface of the susceptor 217 from below and causing it to float from the susceptor 217 .

[0201] If the wafer lifting device 275 causes the processing substrate 200 to float from the upper surface of the base 217, an insertion space is formed in the space below the processing substrate 200 (between the lower surface of the processing substrate 200 and the upper surface of the base 217). Therefore, the substrate holding plate, i.e., the tweezers, provided on the wafer transfer machine (not shown) is inserted into the insertion space of the processing substrate 200 from the wafer loading and unloading port 250.

[0202] The tweezers inserted under the processing substrate 200 rise to transfer and receive the processing substrate 200 .

[0203] The tweezers having received the processed substrate 200 retreat through the wafer loading / unloading port 250 to carry the processed substrate 200 out of the processing chamber 201 .

[0204] Next, the wafer transfer machine that has carried out the processed substrate 200 using tweezers transfers the processed substrate 200 to a predetermined storage location such as an empty wafer cassette outside the processing chamber 201 .

[0205] Next, the wafer transfer machine receives the processing substrate 200 to be subjected to the next film forming process from a predetermined storage location such as a loaded wafer cassette by using tweezers, and carries the substrate 200 from the wafer loading / unloading port 250 into the processing chamber 201 .

[0206] The tweezers convey the processing substrate 200 to a position above the susceptor 217 where the center of the processing substrate 200 coincides with the center of the susceptor 217 .

[0207] When the processing substrate 200 is conveyed to a predetermined position, the tweezers are slightly lowered to transfer the processing substrate 200 onto the susceptor 217 .

[0208] The tweezers that have delivered the processing substrate 200 to the wafer lifting device 275 withdraw from the wafer loading / unloading port 250 to the outside of the processing chamber 201 .

[0209] When the tweezers are withdrawn from the processing chamber 201 , the wafer loading / unloading port 250 is closed by the gate valve (partition valve) 244 .

[0210] When the gate valve 244 is closed, the rotary drum 227 and the heating unit 251 are lifted relative to the processing chamber 201 by the lifting platform 282 via the rotary shaft 277 and the support shaft 276 .

[0211] As the rotating drum 227 and the heating unit 251 rise, the heater side protrusion pins 266A, the heater side protrusion pins 266B, and the rotating side protrusion pins 274 are relatively lowered relative to the rotating drum 227 and the heating unit 251. Figure 3 As shown, the processing substrate 200 is in a state of being completely transferred onto the susceptor 217 .

[0212] The rotating shaft 277 and the supporting shaft 276 stop at a position where the upper end of the heater-side protruding pin 266A is close to the lower surface of the heater 207 .

[0213] On the other hand, the processing chamber 201 is exhausted by an exhaust device (not shown) connected to the exhaust port 235 .

[0214] At this time, the vacuum environment of the processing chamber 201 is isolated from the external atmospheric pressure environment by the bellows 279 .

[0215] Next, the rotating drum 227 is rotated by the substrate stage rotating mechanism 267 via the rotating shaft 277 .

[0216] That is, when the substrate stage rotating mechanism 267 operates, the rotating magnetic field of the stator 284 cuts the magnetic fields of the plurality of magnetic poles of the rotor 289 , thereby rotating the rotor 289 , and thus the rotating drum 227 rotates using the rotating shaft 277 fixed to the rotor 289 .

[0217] At this time, the rotation position of the rotor 289 is constantly detected by the magnetic rotary encoder 294 provided in the substrate stage rotating mechanism 267 and transmitted to the drive control unit 422, and the rotation speed and the like are controlled based on the signal.

[0218] During the rotation of the rotating drum 227, the rotating side protrusion pin 274 leaves the bottom surface of the processing chamber 201, and the heater side protrusion pin 266B leaves the rotating side ring 269, so the rotation of the rotating drum 227 does not hinder the wafer lifting device 275, and the heating unit 251 remains in a stopped state.

[0219] That is, in the wafer lifting device 275 , the rotating-side ring 269 and the rotating-side protruding pins 274 rotate together with the rotating drum 227 , and the heater-side ring 273 and the heater-side protruding pins 266A stop together with the heating unit 251 .

[0220] When the temperature of the processing substrate 200 rises to the processing temperature, the exhaust volume of the exhaust port 235 and the rotation of the rotating drum 227 are stable. Figure 3 As indicated by a solid arrow in FIG. 2 , the processing gas 230 is introduced into the gas supply pipe 232 .

[0221] The processing gas 230 introduced into the gas supply pipe 232 flows into the buffer chamber 237 that functions as a gas dispersion space, and then diffuses radially outward in a radially outer direction, becomes a roughly uniform flow from each gas blowing outlet 247 of the plate 240, and is blown out in a shower toward the processing substrate 200.

[0222] The processing gas 230 blown out in a shower shape from the gas blowing outlets 247 group is sucked into the exhaust port 235 through the exhaust buffer space 249 and exhausted.

[0223] The processing temperature in this embodiment refers to the temperature of the processing substrate 200 or the temperature in the processing chamber 201, and the processing time refers to the time during which the processing is continued. This also applies to the following description.

[0224] At this time, since the processing substrate 200 on the susceptor 217 supported by the rotating drum 227 rotates, the processing gas 230 blown out in a shower shape from the gas blowing outlets 247 group is in a state of evenly contacting the entire surface of the processing substrate 200 .

[0225] Since the processing gas 230 contacts the entire surface of the processing substrate 200 evenly, the CVD film ( Fig. 6A The film thickness distribution and film quality distribution of the film 32 shown are uniform over the entire surface of the processing substrate 200.

[0226] Furthermore, since the heating unit 251 is supported by the support shaft 276 and is not rotated, the temperature distribution of the substrate 200 to be processed, which is heated by the heating unit 251 while the rotary drum 227 is rotated, is uniformly controlled over the entire surface.

[0227] In this way, since the temperature distribution of the processing substrate 200 is uniformly controlled over the entire surface, the film thickness distribution and film quality distribution of the CVD film formed on the processing substrate 200 by the thermochemical reaction are uniformly controlled over the entire surface of the processing substrate 200 .

[0228] When the preset processing time has elapsed, the operation of the substrate stage rotating mechanism 267 is stopped.

[0229] At this time, since the rotation position of the base 217 (rotor 289) is constantly monitored by the magnetic rotary encoder 294 provided in the substrate stage rotating mechanism 267, the base 217 stops accurately at the preset rotation position.

[0230] That is, the heater-side protruding pin 266A, the heater 207, and the insertion hole 256 of the base 217 are matched accurately and with good reproducibility.

[0231] When the operation of the substrate stage rotating mechanism 267 is stopped, as described above, the rotating drum 227 and the heating unit 251 are lowered to the loading / unloading position by the lifting platform 282 via the rotating shaft 277 and the supporting shaft 276 .

[0232] In addition, as described above, during the descent, the processing substrate 200 is floated from the susceptor 217 by the action of the wafer lifting device 275 .

[0233] At this time, since the heater-side protrusion pin 266A, the heater 207 and the insertion hole 256 of the base 217 are matched accurately and reproducibly, there will be no protrusion error in which the heater-side protrusion pin 266A causes the base 217 and the heater 207 to protrude.

[0234] Thereafter, the above-described process is repeated to perform film forming process on the next processing substrate 200 to form a CVD film. The processing substrate 200 on which the CVD film having a predetermined thickness is formed is carried out from the processing chamber 201 .

[0235] However, when the processing substrate 200 is placed on the base 217, as an example, Fig. 6A As shown in FIG. 1 , due to the warpage of the processing substrate 200, a gap may be generated between the susceptor 217 and the outer periphery of the processing substrate 200. In such a case, the unexpected film 32 may be formed not only on the radially outer side of the processing substrate 200, but also on a portion between the processing substrate 200 and the susceptor 217. The unexpected film 32 may be removed by performing a cleaning process described below after the film formation process.

[0236] (Cleaning treatment)

[0237] Hereinafter, a cleaning process of the susceptor 217 according to the present embodiment will be described.

[0238] In order to make the description more specific and clear, the first processing furnace 202 ( Figure 3 ) is described below, but the cleaning process of the susceptor 217 in the other second processing furnace 137 is the same.

[0239] The cleaning process in this embodiment is performed at a lower temperature than the film forming process.

[0240] First, the outline of the cleaning process will be described.

[0241] During the cleaning process, the cooling process (also referred to as cooling process) of the base 217 is performed in such a way that the temperature of the base 217 is lowered to the cleaning temperature. At a time point when the exhaust volume of the exhaust port 235 and the rotation of the rotating drum 227 are stable, Figure 3 As indicated by the solid arrow in FIG. 2 , the cleaning gas is introduced into the gas supply pipe 232 .

[0242] The cleaning gas introduced into the gas supply pipe 232 flows into the buffer chamber 237 functioning as a gas dispersion space, and then diffuses radially outward in a radial direction, and becomes a substantially uniform flow from each gas blowing port 247 of the plate 240, and is blown out in a shower shape toward the base 217. The cleaning gas blown out in a shower shape from the gas blowing port 247 group passes through the space above the base 217, and is sucked into the exhaust port 235 through the exhaust buffer space 249 and exhausted.

[0243] At this time, the susceptor 217 supported by the rotating drum 227 rotates. The cleaning gas blown out in a shower shape from the gas blowing ports 247 group contacts the film 32 on the susceptor 217, thereby removing the film 32. In addition, this is not limited to the film 32 on the susceptor 217, and even unexpected films 32 (not shown) formed on the components in the processing container, the inner surface of the processing container, etc. can be removed.

[0244] Here, in order to improve the production efficiency of processing the substrate 200, it is preferred to reduce the temperature of the susceptor 217 as quickly as possible and shorten the cooling process time (also referred to as cooling process time).

[0245] Therefore, in the present embodiment, the first cooling substrate 300L and the second cooling substrate 300S, which are lower in temperature than the susceptor 217 , are placed on the susceptor 217 to lower the temperature of the susceptor 217 .

[0246] Thus, the time until the next film forming process of the processing substrate 200 starts can be shortened, and the production efficiency of the processing substrate 200 can be improved.

[0247] Here, if Figure 6B As shown in the figure, the first cooling substrate 300L and the second cooling substrate 300S are arranged inside the annular film 32 unexpectedly formed on the susceptor 217 in accordance with the center of the substrate and the center of the susceptor 217, wherein the first cooling substrate 300L and the second cooling substrate 300S are formed to have a smaller diameter than the processing substrate 200 and smaller than the diameter of the annular film 32, and the first cooling substrate 300L and the second cooling substrate 300S are formed to have a smaller diameter than the processing substrate 200 and smaller than the diameter of the annular film 32, and the whole can be connected to the susceptor 217 in a narrower range than the processing substrate 200. Thus, the cleaning gas can reach all parts of the film 32 formed on the susceptor 217. In addition, since the first cooling substrate 300L and the second cooling substrate 300S are arranged inside the annular film 32, the first cooling substrate 300L and the second cooling substrate 300S are naturally placed inside the outline of the susceptor 217.

[0248] Therefore, by the cleaning process, not only the film 32 outside the range of the processing substrate 200 (radially outside) can be removed, but also the film 32 formed between the processing substrate 200 and the base 217 can be removed. In other words, the film 32 formed inside the outer periphery of the processing substrate 200 can be removed (see Fig. 6A ).

[0249] [Film Formation Process, Cooling Process, and Cleaning Process in Substrate Processing Apparatus 1]

[0250] The following is an overview of an example of a method for operating a film forming process and a cleaning process in the substrate processing apparatus 1. Figure 7 The processing diagram shown in FIG. Figure 8 The flowchart shown is used for explanation. Figure 8 The processing shown (described later) Figures 9-11 The processing shown is also the same) and is performed by the control unit 400 according to the program process.

[0251] like Figure 8 As shown, in step 100 , the processing substrate 200 is carried into the first processing furnace 202 and placed on the susceptor 217 .

[0252] In the next step 102, a film forming process (substrate processing step) is performed on the processing substrate 200. As an example, Figure 7 Process 1 and process 2).

[0253] In the next step 104, the processed substrate 200 on which the film forming process has been completed is unloaded. In addition, the processed substrate 200 is transported to the processed substrate cooling unit 139 and cooled as needed.

[0254] In the next step 106, it is determined whether cleaning processing is required using the first processing furnace 202. When it is determined that cleaning processing is required, the process proceeds to step 108. When it is determined that cleaning processing is not required, the process ends.

[0255] In step 108, the radiation thermometer 264 is used to measure the temperature inside the first processing furnace 202. In the present embodiment, the temperature of the susceptor 217 is measured. When it is determined that the measured temperature of the susceptor 217 is higher than the cleaning temperature during the cleaning process, the process proceeds to step 110. When it is determined that the temperature of the susceptor 217 is lower than the cleaning temperature during the cleaning process, the cooling process is terminated and the process proceeds to step 112 (temperature comparison process).

[0256] In step 110, a cooling substrate (the first cooling substrate 300L or the second cooling substrate 300S) is placed on the susceptor 217 and a cooling process (a cooling substrate placing process and a cooling process. For example, Figure 7 Process 3 to process 5), after cooling, go to process 112.

[0257] In step 112, the first processing furnace 202 is cleaned (cleaning process. For example, Figure 7 Process 6).

[0258] As described above, when the film forming process of one processing substrate 200 is completed and the cleaning process is completed, the film forming process of the next processing substrate 200 is started ( Figure 7 Step 7), repeat the same cooling and cleaning process.

[0259] As described above, by performing the above steps, the susceptor 217 can be rapidly cooled, so that the production efficiency of the processed substrate 200 can be improved.

[0260] Next, use Fig. 9 The flowchart shown in FIG. 1 is for calculating the number of cooling processes (for example, Figure 7 The method of steps 3 to 5) is described below.

[0261] First, in step 200 , the current temperature inside the first processing furnace 202 is acquired, and in this embodiment, the temperature of the susceptor 217 is acquired.

[0262] In the next step 202 , the cleaning temperature when the cleaning process is performed in the first processing furnace 202 is acquired.

[0263] In the next step 204 , the temperature difference between the current temperature of the susceptor 217 and the cleaning temperature is calculated (temperature of the susceptor 217 −cleaning temperature=difference).

[0264] In the next step 206, as an example, the temperature change amount information of each cooling process using one first cooling substrate 300L is obtained. In other words, the information of how much the temperature of the base 217 decreases when the first cooling substrate 300L is placed is obtained. In addition, the temperature change amount information can be defined by a parameter, for example, the temperature change amount implemented in the past can be used. Moreover, when the first cooling substrate 300L is replaced multiple times, the previous temperature change amount can also be used.

[0265] In the next step 208 , the number of times the cooling process is performed is calculated. Here, the calculation is performed based on the difference between the temperature of the susceptor 217 and the cleaning temperature and the amount of temperature change per use of one first cooling substrate 300L.

[0266] For example, when the current temperature of the base 217 is set to A°C, the cleaning temperature is set to B°C, the difference between the temperature of the base 217 and the cleaning temperature is set to C°C (=A°C-B°C), the temperature change each time a first cooling substrate 300L is used is set to D°C, and the number of cooling treatment executions is set to n, the number of cooling treatment executions n can be obtained by C / D≤n (where n is an integer obtained by calculating C / D and rounding up the decimal point).

[0267] Next, use Fig.10 The flowchart shown will be used to explain the cooling process (determination based on the number of times the cooling process is executed).

[0268] First, in step 300, the number of times n the cooling process is performed is acquired.

[0269] In the next step 302, the remaining number of cooling treatments is determined. In this step 302, when it is determined that the remaining number of cooling treatments is less than 1, the cooling treatment is terminated, when it is determined that the remaining number of cooling treatments is 1, the process proceeds to step 304, and when it is determined that the remaining number of cooling treatments is greater than 1, the process proceeds to step 306.

[0270] In step 304, the used first cooling substrate 300L placed on the susceptor 217 is taken out, and as the final cooling process, the second cooling substrate 300S accommodated in the cooling substrate cooling unit 300 is taken out and placed on the susceptor 217. That is, the first cooling substrate 300L is replaced with the second cooling substrate 300S. After the replacement, the process proceeds to step 308.

[0271] In step 308 , the second cooling substrate 300S is placed on the susceptor 217 and a cooling process is performed.

[0272] On the other hand, in step 306 , the used first cooling substrate 300L placed on the susceptor 217 is unloaded, and a new first cooling substrate 300L unloaded from the cooling substrate cooling unit 300 is loaded and placed on the susceptor 217 .

[0273] In the next step 310 , with the new first cooling substrate 300L placed on the susceptor 217 , a cooling process of the susceptor 217 is performed, and after the cooling process is completed, the process proceeds to step 312 .

[0274] In step 312, the used first cooling substrate 300L is carried out, and the process returns to step 300. In addition, the used first cooling substrate 300L is returned to the cooling substrate cooling unit 300 to be cooled and used again.

[0275] In this way, finally, the susceptor 217 is cooled by the second cooling substrate 300S.

[0276] Next, use Fig.11 The flowchart shown in FIG. 1 is for explaining an example of the cleaning process of the first processing furnace 202 .

[0277] First, in step 400 , it is determined whether the surface of the susceptor 217 needs to be protected when the susceptor 217 is cleaned.

[0278] In step 400 , when it is determined that the base 217 needs to be protected, the process proceeds to step 402 , and when it is determined that the base 217 does not need to be protected, the process proceeds to step 404 .

[0279] In step 402, it is determined whether there is a cooling substrate (first cooling substrate 300L or second cooling substrate 300S) on the susceptor 217. In step 402, if it is determined that there is no cooling substrate, the process proceeds to step 406, and if it is determined that there is a cooling substrate, the process proceeds to step 408.

[0280] In step 406, the second cooling substrate 300S is moved into the first processing furnace 202, and the second cooling substrate 300S is placed on the base 217. After the second cooling substrate 300S is placed, proceed to step 408. In step 408, the second cooling substrate 300S is cleaned while being placed on the base 217.

[0281] On the other hand, in step 404, it is determined whether there is a cooling substrate on the susceptor 217. If it is determined in step 404 that there is no cooling substrate, the process proceeds to step 408, and the first processing furnace 202 is cleaned without placing a cooling substrate on the susceptor 217.

[0282] On the other hand, when it is determined in step 404 that a cooling substrate is on the susceptor 217 , the process proceeds to step 410 , the cooling substrate (eg, the second cooling substrate 300S) placed on the susceptor 217 is unloaded, and the cooling substrate returns to the cooling substrate cooling unit 300 .

[0283] In step 410 , after the second cooling substrate 300S placed on the susceptor 217 is unloaded, the process proceeds to step 408 , and the first processing furnace 202 is cleaned in a state where the second cooling substrate 300S is not placed on the susceptor 217 .

[0284] When the cleaning process is completed in step 408 , the process proceeds to step 412 .

[0285] In step 412, when the second cooling substrate 300S is placed on the susceptor 217, the second cooling substrate 300S is unloaded and returned to the cooling substrate cooling unit 300, and the process is terminated. In addition, when the second cooling substrate 300S is not placed on the susceptor 217, the process is terminated.

[0286] According to this aspect, one or more of the following effects can be obtained.

[0287] In the substrate processing apparatus 1 of the present embodiment, the susceptor 217 can be rapidly cooled using cooling substrates (the first cooling substrate 300L and the second cooling substrate 300S) dedicated to cooling, which can contribute to improvement of cooling efficiency.

[0288] Furthermore, during the cleaning process, by directly using the cooling substrate (eg, the second cooling substrate 300S) used during the cooling process (ie, in a state of being mounted on the base 217), the time for the cooling substrate removal process can be shortened, thereby contributing to improving production efficiency.

[0289] In addition, since the susceptor 217 can be rapidly cooled and the cleaning process can be started promptly, the production efficiency of the processed substrate 200 can be improved.

[0290] In the substrate processing apparatus 1 of the present embodiment, the second cooling substrate 300S is used, which has a diameter smaller than that of the processing substrate 200 and a diameter smaller than the inner diameter of the annular film 32 accidentally formed on the susceptor 217, so that the second cooling substrate 300S can be arranged inside the annular film 32 so as not to cover the annular film 32. Thus, the second cooling substrate 300S can be brought into close contact with the susceptor 217 as a whole, and the susceptor 217 can be cooled more efficiently than in the case of not being in close contact.

[0291] In addition, in the substrate processing apparatus 1, the cleaning process of the susceptor 217 can be performed in a state where the second cooling substrate 300S is placed on the susceptor 217. By placing the second cooling substrate 300S on the susceptor 217, the range where the second cooling substrate 300S is placed will not be exposed to the cleaning gas and will not be cleaned, so that the portion that does not need to be cleaned can be protected, and the susceptor 217 can also be protected, which helps to delay the degradation of the susceptor 217.

[0292] Furthermore, since the second cooling substrate 300S having a diameter smaller than the inner diameter of the annular film 32 is placed inside the annular film 32 , the accidentally formed film 32 can be reliably removed by performing the cleaning process while the second cooling substrate 300S is placed on the susceptor 217 .

[0293] By setting the diameters of the first cooling substrate 300L and the second cooling substrate 300S to be greater than 90% and less than 99% of the diameter of the processing substrate 200, the first cooling substrate 300L and the second cooling substrate 300S can be arranged on the base 217 on the inner side of the accidentally formed film 32 that is wrapped inwardly further than the contour line of the processing substrate 200.

[0294] In addition, as the diameter of the first cooling substrate 300L and the second cooling substrate 300S decreases, the cooling capacity of the susceptor 217 decreases, and the area for protecting the susceptor 217 decreases. Therefore, the diameter of the first cooling substrate 300L and the second cooling substrate 300S is preferably set to be 90% or more relative to the diameter of the processing substrate 200. In addition, by setting the diameter of the first cooling substrate 300L and the second cooling substrate 300S to be 99% or less relative to the diameter of the processing substrate 200, it is possible to prevent the film 32 formed on the susceptor 217 from being covered and hidden.

[0295] By placing the first cooling substrate 300L and the second cooling substrate 300S on the inner side of the outline of the susceptor 217 , it is possible to prevent the film 32 formed unintentionally on the susceptor 217 from being covered and hidden.

[0296] In addition, it is preferred that the processing substrate 200 , the first cooling substrate 300L, and the second cooling substrate 300S are placed on the susceptor 217 in such a manner that the center of the processing substrate 200 , the first cooling substrate 300L, and the second cooling substrate 300S are all aligned with the center of the susceptor 217 .

[0297] By placing the first cooling substrate 300L and the second cooling substrate 300S on the inner side of the outline (outer periphery) of the processing substrate 200 when placed on the susceptor 217 , the ring-shaped film 32 accidentally formed on the susceptor 217 is not covered and hidden.

[0298] When a cooling substrate (the first cooling substrate 300L or the second cooling substrate 300S) is placed on the susceptor 217 and cooled, the temperature of the susceptor 217 may not drop to a temperature for cleaning. In this embodiment, a plurality of first cooling substrates 300L cooled in the cooling substrate cooling unit 300 are prepared, so that the first cooling substrate 300L can be replaced (there is also a case where the second cooling substrate 300S is placed last) to perform multiple cooling processes, so that the temperature of the susceptor 217 can be rapidly and efficiently dropped.

[0299] When the temperature of the base 217 has not reached a temperature at which cleaning processing can be performed, the first cooling substrate 300L can be replaced repeatedly (there is also a case where the second cooling substrate 300S is placed last). This can rapidly reduce the temperature of the base 217 to a temperature at which cleaning processing can be performed, which can help improve the cooling efficiency.

[0300] In the substrate processing apparatus 1, during the cooling process, the first cooling substrate 300L and the second cooling substrate 300S of different sizes can be switched in accordance with the temperature of the susceptor 217. That is, when the difference between the temperature of the susceptor 217 and the temperature at which the cleaning process can be performed is large, the first cooling substrate 300L with a larger diameter, in other words, the first cooling substrate 300L with a larger cooling capacity than the second cooling substrate 300S with a relatively small diameter is first placed on the susceptor 217, so that the temperature drop rate of the susceptor 217 can be accelerated. In this way, the susceptor 217 can be cooled rapidly and efficiently.

[0301] During the cooling process, when the temperature of the susceptor 217 is higher than the temperature at which the cleaning process can be performed, it is preferable to select the first cooling substrate 300L having a diameter close to the processing substrate 200. If the first cooling substrate 300L having a diameter close to the processing substrate 200 is compared with the second cooling substrate 300S having a smaller diameter than the first cooling substrate 300L, the first cooling substrate 300L having a diameter close to the processing substrate 200 has a higher cooling capacity. Therefore, during the cooling process, when the temperature of the susceptor 217 is higher than the temperature at which the cleaning process can be performed, the susceptor 217 can be cooled rapidly and efficiently by first selecting and using the first cooling substrate 300L having a diameter close to the processing substrate 200.

[0302] Under the premise of keeping the processing substrate 200 mounted on the base 217 for cleaning treatment, in order to rapidly reduce the temperature of the base 217, the first cooling substrate 300L is first used for cooling treatment, and finally replaced with the second cooling substrate 300S having a smaller diameter than the first cooling substrate 300L for cooling treatment.

[0303] Thus, the film 32 accidentally formed on the susceptor 217 can be removed while the second cooling substrate 300S is placed, and there is no need to remove the second cooling substrate 300S before cleaning, which can contribute to improvement of working efficiency.

[0304] Furthermore, when the temperature of the susceptor 217 reaches a temperature at which the cleaning process can be performed, by terminating the cooling process, the susceptor 217 is not subjected to unnecessary cooling, and the cleaning process can be started promptly.

[0305] When multiple cooling treatments are required, it is preferred that a support member 322 capable of supporting the first cooling substrate 300L and the second cooling substrate 300S in multiple layers is provided in a receiving chamber 304 for receiving multiple first cooling substrates 300L and second cooling substrates 300S for cooling treatment, as in the cooling substrate cooling unit 300 of the present embodiment.

[0306] In addition, in order to transfer the first cooling substrate 300L and the second cooling substrate 300S between the cooling substrate cooling unit 300 and the first processing furnace 202, it is preferable that the cooling substrate cooling unit 300 is configured as shown in the present embodiment (see Figure 1 ) In this way, it is set to be connected to the first transport chamber 103.

[0307] In addition, when performing multiple cooling treatments, by replacing the cooling substrate (e.g., the first cooling substrate 300L and the second cooling substrate 300S) accommodated in the accommodation chamber 304 with the cooling substrate (e.g., the first cooling substrate 300L) that has completed the cooling treatment, the cooled cooling substrate (e.g., the first cooling substrate 300L and the second cooling substrate 300S) can be used in the cooling treatment of the base 217.

[0308] The substrate cooling unit 300 of the present embodiment is provided with supports 322 capable of supporting the substrate in multiple stages in the vertical direction, and a lifting mechanism 328 for lifting the supports 322 in the vertical direction.

[0309] Therefore, by moving the support member 322 up and down, the first wafer transfer machine 112 can be used to easily transfer the first cooling substrate 300L and the second cooling substrate 300S.

[0310] The receiving chamber 304 is connected to a supply pipe 312 capable of supplying cooling gas and an exhaust pipe 314 for exhausting the gas in the receiving chamber 304. Therefore, by supplying and exhausting cooling gas to the receiving chamber 304, the first cooling substrate 300L and the second cooling substrate 300S, for example, the warm first cooling substrate 300L and the second cooling substrate 300S returned after the cooling process is completed, can be rapidly cooled.

[0311] Furthermore, according to the program of the present embodiment, as an example, a computer can execute predetermined processing in each of the above-mentioned structures.

[0312] [Other embodiments]

[0313] As mentioned above, one embodiment of the present invention has been described, but the present invention is not limited to the above content, and various modifications other than the above content can be implemented without departing from the scope of the present invention.

[0314] In the above embodiment, the first cooling substrate 300L and the second cooling substrate 300S having different diameters are used to cool the first processing furnace 202, but the present invention is not limited to this. A cooling substrate having the same diameter (the first cooling substrate 300L or the second cooling substrate 300S) may also be used to cool the base 217.

[0315] In addition, the thickness of the first cooling substrate 300L may be thicker than the thickness of the second cooling substrate 300S. Thus, the cooling capacity of each of the first cooling substrates 300L can be further improved, thereby reducing the number of times the first cooling substrate 300L is replaced. As an example, if the thickness of the first cooling substrate 300L is set to 2 times, the number of times the first cooling substrate 300L is replaced can be halved.

[0316] In the first cooling substrate 300L and the second cooling substrate 300S, the thickness and the diameter can be freely changed as needed.

[0317] In addition, a plurality of cooling substrate cooling units 300 may be provided as required.

[0318] The present disclosure can also be applied to other types of substrate processing apparatuses having structures different from the substrate processing apparatus 1 that performs film formation by placing a processed substrate on a susceptor 217. In this case, each process can be performed according to the same process procedures and process conditions as the above embodiment, and the same effects as the above embodiment can be obtained.

[0319] The cooling substrate cooling unit 300 supplies cooling gas into the frame to cool the first cooling substrate 300L and the second cooling substrate 300S, but the cooling substrate cooling unit 300 may be configured as a refrigerator to cool the first cooling substrate 300L and the second cooling substrate 300S without supplying cooling gas.

[0320] Furthermore, the present invention is not limited to substrate processing devices, but can also be applied to LCD (Liquid Crystal Display) manufacturing devices, solar panel manufacturing devices, and the like.

[0321] The disclosure of Japanese Patent Application No. 2022-123008 filed on August 1, 2022 is incorporated herein by reference in its entirety. All documents, patent applications, and technical standards described in this specification are incorporated herein by reference to the same extent as if each document, patent application, and technical standard were specifically and individually described as being incorporated by reference.

Claims

1. A substrate processing device, characterized in that: have: a processing container capable of processing a processing substrate; a substrate mounting table capable of mounting the above-mentioned processing substrate; and A control unit capable of performing the following control: after processing the above-mentioned processing substrate, when the temperature in the above-mentioned processing container is higher than the temperature of the cleaning processing in the above-mentioned processing container, a cooling substrate having a shorter outer circumference than the above-mentioned processing substrate is placed on the above-mentioned substrate placement table to perform the cooling processing in the above-mentioned processing container, and the above-mentioned cleaning processing is performed after the temperature in the above-mentioned processing container reaches a temperature at which the above-mentioned cleaning processing can be performed.

2. The substrate processing device according to claim 1, characterized in that: The cleaning process is performed in a state where the cooling substrate is placed on the substrate mounting table.

3. The substrate processing device according to claim 2, characterized in that: The cooling substrate is set to have an outer circumference length that is not less than 90% and not more than 99% of the outer circumference length of the processing substrate.

4. The substrate processing device according to claim 3, characterized in that: The cooling substrate is placed inside the outline of the substrate placing table.

5. The substrate processing device according to claim 3, characterized in that: The cooling substrate is arranged inside a contour line of the processing substrate when the processing substrate is mounted on the substrate mounting table.

6. The substrate processing apparatus according to claim 1, wherein: The substrate processing apparatus includes a plurality of the cooling substrates, and the cooling process is performed by replacing the cooling substrates.

7. The substrate processing device according to claim 6, characterized in that: When the temperature in the processing container is not a temperature at which the cleaning process can be performed, the control unit repeatedly replaces the cooling substrate.

8. The substrate processing device according to claim 7, characterized in that: During the cooling process, the control unit switches the cooling substrates having different outer circumferential lengths according to the temperature of the processing container.

9. The substrate processing device according to claim 8, characterized in that: During the cooling process, when the temperature in the processing container is higher than a temperature at which the cleaning process can be performed, the control unit selects a first cooling substrate having an outer circumference length close to that of the processing substrate.

10. The substrate processing apparatus according to claim 8, wherein: The cooling substrates having different outer circumferences include a first cooling substrate and a second cooling substrate having a shorter outer circumference than the first cooling substrate. When it is determined that the cooling process is the last one, the control unit performs the cooling process by replacing the cooling substrate with the second cooling substrate having a shorter outer circumference than the first cooling substrate.

11. The substrate processing apparatus according to claim 1, wherein: The control unit ends the cooling process when the temperature in the process container reaches a temperature at which the cleaning process can be performed.

12. The substrate processing apparatus according to claim 1, wherein: The substrate processing device has a receiving chamber capable of receiving the cooling substrate. The storage chamber includes a support capable of supporting a plurality of the cooling substrates in multiple layers.

13. The substrate processing apparatus according to claim 12, wherein: During the cooling process, the control unit replaces the cooling substrate mounted on the substrate mounting table with the cooling substrate accommodated in the accommodation chamber.

14. The substrate processing apparatus according to claim 12, wherein: The support includes a lifting mechanism capable of lifting and lowering the support supporting the plurality of cooling substrates.

15. The substrate processing apparatus according to claim 12, wherein: The accommodation chamber has a pipe capable of supplying cooling gas, and is capable of cooling the cooling substrate.

16. A method for manufacturing a semiconductor device, characterized in that: have: A substrate processing step of processing the above-mentioned processing substrate in a processing container having a substrate mounting table capable of mounting the processing substrate; a temperature comparison step of comparing the temperature in the processing container with a temperature at which a cleaning process can be performed to clean the processing container; a cooling substrate placement step of placing a cooling substrate having a shorter outer circumference than the processed substrate and capable of cooling the substrate placement table on the substrate placement table when the temperature in the processing container is higher than the temperature of the cleaning process; A cooling process, cooling the inside of the processing container; as well as The cleaning step performs the cleaning process when the temperature in the processing container reaches a temperature at which the cleaning process can be performed.

17. The method for manufacturing a semiconductor device according to claim 16, wherein: The cleaning step is performed in a state where the cooling substrate is placed on the substrate mounting table.

18. A program for causing a substrate processing apparatus to execute by a computer, characterized in that: The above program has: In the substrate processing process, the processing substrate is processed in a processing container having a substrate mounting table capable of mounting the processing substrate; a temperature comparison process, comparing the temperature in the processing container with a temperature at which a cleaning process can be performed to clean the processing container; A cooling substrate placement process, when the temperature in the processing container is higher than the temperature of the cleaning process, a cooling substrate having a shorter outer circumference than the processing substrate and capable of cooling the substrate placement table is placed on the substrate placement table; A cooling process is to cool the inside of the processing container; as well as In the cleaning process, the cleaning process is performed when the temperature in the processing container reaches a temperature at which the cleaning process can be performed.

19. A program according to claim 18, characterised in that The cleaning process is performed in a state where the cooling substrate is placed on the substrate mounting table.

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