Method for monitoring and calibrating temperature of epitaxial cavity

Abstract

The invention provides a method for monitoring and calibrating the temperature of an epitaxial cavity. The method comprises the following steps: providing at least one substrate; forming an epitaxial layer on the substrate at a preset growth temperature in the epitaxial cavity; measuring the thickness of the epitaxial layer to obtain the thickness distribution of the epitaxial layer on the substrate; determining the temperature and temperature distribution of the epitaxial cavity according to the thickness distribution of the epitaxial layer on the substrate and a pre-established mapping relation between the thickness of the epitaxial layer and the temperature of the epitaxial cavity; and carrying out temperature calibration on the epitaxial cavity. By directly measuring the thickness of the epitaxial layer, the temperature of the epitaxial cavity can be effectively monitored, and the temperature setting at different positions of the epitaxial cavity can be effectively calibrated, so that the epitaxial growth condition is effectively optimized, and the growth quality of the epitaxial layer is improved. And meanwhile, the temperature monitoring precision and the calibration reliability of the epitaxial cavity can be remarkably improved, the temperature monitoring process of the epitaxial cavity is effectively simplified, and the production efficiency is improved.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor manufacturing and relates to a method for monitoring and calibrating the temperature of an epitaxial cavity. Background Art

[0002] In semiconductor manufacturing, the epitaxy process refers to growing a single crystal epitaxial layer on a single crystal substrate with the same crystal phase orientation as the substrate. The thickness range is usually controlled between 0.5 microns and 20 microns to meet different application requirements. During the epitaxial growth process, the temperature distribution inside the epitaxial cavity has an important influence on the growth quality of the epitaxial layer, which not only affects the integrity of the crystal structure, but also affects the uniformity of stress distribution and the generation of defects.

[0003] In the prior art, in order to monitor the temperature of each area in the epitaxial cavity, a method of measuring the block resistance of the epitaxial layer is usually used. The process flow of this method is complicated, including substrate preparation, epitaxial layer growth, oxide layer coverage, P-type ion implantation, high-temperature annealing, oxide layer removal, epitaxial layer surface block resistance measurement, and multiple steps such as determining the temperature distribution of the epitaxial cavity based on the correspondence between block resistance and temperature. Among them, the high-temperature annealing step is to activate the injected ions, and the activation degree of the injected ions will be different under different annealing temperature conditions, which will change the number of electrons released due to ion activation, and ultimately lead to changes in the resistance value of the block resistance of the epitaxial layer, so that the temperature distribution of different areas inside the epitaxial cavity can be determined by measuring the block resistance value of different areas on the surface of the epitaxial layer. However, the high-temperature annealing treatment in this method is generally carried out in a range of more than 1100°C. This high-temperature treatment will cause the injected ions inside the substrate to be unable to be directly used in subsequent processes, and it is necessary to carry out complex process treatment or waste disposal through wafer regeneration technology, which increases the complexity of the production process and production costs. In addition, for epitaxial layers grown at low temperatures (e.g., 800°C to 950°C), the calibration accuracy of this method is low. This is because under low annealing temperature conditions, the activation efficiency of ions is significantly reduced, and the correlation between sheet resistance and temperature becomes blurred, which significantly reduces the accuracy and reliability of judging the temperature distribution of the epitaxial cavity.

[0004] Therefore, how to provide a new method for monitoring and calibrating the temperature of the epitaxial chamber to reduce production costs, simplify the process flow, and at the same time improve the accuracy of epitaxial chamber temperature monitoring and the reliability of calibration during low-temperature epitaxial growth has become an important technical problem that technical personnel in this field need to solve urgently.

[0005] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because they are described in the background technology section of the present application. Summary of the invention

[0006] In view of the shortcomings of the prior art described above, an object of the present invention is to provide a method for monitoring and calibrating the temperature of an epitaxial cavity, so as to solve the problems of high production cost and complicated process flow in the prior art method for determining the temperature distribution of an epitaxial cavity, as well as low temperature monitoring accuracy and poor calibration reliability of the epitaxial cavity for epitaxial growth under low temperature conditions.

[0007] To achieve the above objectives and other related objectives, the present invention provides a method for monitoring and calibrating the temperature of an epitaxial cavity, comprising the following steps:

[0008] providing at least one substrate;

[0009] In an epitaxial cavity, forming an epitaxial layer on the substrate at a preset growth temperature, during the process of forming the epitaxial layer, the substrate does not rotate;

[0010] Measuring the thickness of the epitaxial layer to obtain the thickness distribution of the epitaxial layer on the substrate;

[0011] Determining the temperature and temperature distribution of the epitaxial cavity according to the thickness distribution of the epitaxial layer on the substrate and a pre-established mapping relationship between the thickness of the epitaxial layer and the temperature of the epitaxial cavity;

[0012] The epitaxial cavity is temperature calibrated according to the determined temperature and temperature distribution of the epitaxial cavity.

[0013] Optionally, the preset growth temperature ranges from 800°C to 950°C.

[0014] Optionally, establishing a mapping relationship between the epitaxial layer thickness and the epitaxial cavity temperature comprises the following steps:

[0015] providing a plurality of test substrates;

[0016] Setting a series of different epitaxial chamber temperature conditions, and forming an epitaxial layer on each of the test substrates under each of the epitaxial chamber temperature conditions;

[0017] The thickness data of the epitaxial layer formed under each temperature condition of the epitaxial cavity is measured and recorded, and a mapping relationship between the thickness of the epitaxial layer and the temperature of the epitaxial cavity is established according to the thickness data.

[0018] Optionally, the method for establishing the mapping relationship between the epitaxial layer thickness and the epitaxial chamber temperature includes a curve fitting method.

[0019] Optionally, the epitaxial layer includes a single crystal silicon layer.

[0020] Optionally, a plurality of points are selected on the surface of the epitaxial layer to measure the thickness of the epitaxial layer.

[0021] Optionally, when the thickness of some points of the epitaxial layer deviates from the preset thickness by more than a set range, the temperature of the epitaxial cavity is calculated according to the mapping relationship between the thickness of the epitaxial layer and the temperature of the epitaxial cavity, and the temperature regulating device at the corresponding position of the epitaxial cavity is adjusted to calibrate the temperature of the epitaxial cavity.

[0022] Optionally, the setting range is -2 to 2 angstroms.

[0023] Optionally, an optical measurement device is used to perform non-contact measurement of the thickness of the epitaxial layer.

[0024] Optionally, the optical measurement equipment includes a spectroscopic reflectometer or an ellipsometer.

[0025] As described above, the present invention provides a method for monitoring and calibrating the temperature of an epitaxial cavity, comprising the following steps: providing at least one substrate; forming an epitaxial layer on the substrate at a preset growth temperature in the epitaxial cavity, and the substrate does not rotate during the formation of the epitaxial layer; measuring the thickness of the epitaxial layer to obtain the thickness distribution of the epitaxial layer on the substrate; determining the temperature and temperature distribution of the epitaxial cavity according to the thickness distribution of the epitaxial layer on the substrate and the pre-established mapping relationship between the thickness of the epitaxial layer and the temperature of the epitaxial cavity; and calibrating the temperature of the epitaxial cavity according to the determined temperature and temperature distribution of the epitaxial cavity. The present invention realizes effective monitoring of the temperature of the epitaxial cavity by directly measuring the thickness of the epitaxial layer. Based on the measurement results, the present invention can perform targeted calibration on the temperature settings at different positions, thereby optimizing the epitaxial growth conditions and improving the growth quality of the epitaxial layer. The present invention adopts a method of accurate thickness measurement and establishing a mapping relationship between the thickness of the epitaxial layer and the cavity temperature, so that the monitoring process is more accurate, especially under low temperature conditions, which can significantly improve the accuracy of epitaxial cavity temperature monitoring and the reliability of calibration. In addition, this method significantly simplifies the process of epitaxial cavity temperature monitoring, making the operation more convenient and effectively improving production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 The process flow diagram of the method for monitoring and calibrating the temperature of an epitaxial chamber of the present invention is shown.

[0027] Figure 2It is a schematic diagram of a mapping relationship curve between the epitaxial layer thickness and the epitaxial chamber temperature established in a specific example of the method for monitoring and calibrating the epitaxial chamber temperature of the present invention. DETAILED DESCRIPTION

[0028] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0029] See also Figure 1 to Figure 2 It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0030] This embodiment provides a method for monitoring and calibrating the temperature of an epitaxial cavity. Figure 1 , shown as a process flow chart of the method, comprising the following steps:

[0031] S1: providing at least one substrate;

[0032] S2: forming an epitaxial layer on the substrate at a preset growth temperature in the epitaxial chamber, and during the process of forming the epitaxial layer, the substrate does not rotate;

[0033] S3: measuring the thickness of the epitaxial layer to obtain the thickness distribution of the epitaxial layer on the substrate;

[0034] S4: determining the temperature and temperature distribution of the epitaxial cavity according to the thickness distribution of the epitaxial layer on the substrate and a pre-established mapping relationship between the thickness of the epitaxial layer and the temperature of the epitaxial cavity;

[0035] S5: performing temperature calibration on the epitaxial cavity according to the determined temperature and temperature distribution of the epitaxial cavity.

[0036] Combine the following Figure 1 to Figure 2 The specific technical solution of each step of monitoring and calibrating the temperature of the epitaxial cavity of the present invention is described in detail.

[0037] First, the step S1 is performed: providing at least one substrate.

[0038] As an example, the substrate includes a silicon substrate, a germanium substrate, a germanium silicon substrate, a silicon carbide substrate, a sapphire substrate or other suitable semiconductor substrate. The size and thickness of the substrate are not overly limited here. In this embodiment, the substrate is mainly a silicon substrate.

[0039] Please perform the step S2: forming an epitaxial layer on the substrate at a preset growth temperature in the epitaxial chamber, and during the process of forming the epitaxial layer, the substrate is not rotated.

[0040] Specifically, the epitaxial chamber includes a Metal-Organic Chemical Vapor Deposition (MOCVD) chamber, a Molecular Beam Epitaxy (MBE) chamber, an Atomic Layer Deposition (ALD) chamber or other suitable reaction chambers that can form an epitaxial layer.

[0041] Specifically, the method of forming the epitaxial layer includes any one of metal organic compound chemical vapor deposition, molecular beam epitaxy, hydride vapor phase epitaxy and liquid phase epitaxy.

[0042] As an example, the preset growth temperature ranges from 800°C to 950°C.

[0043] Specifically, the preset growth temperature is a substrate temperature set to cause the epitaxial material to react and deposit on the substrate to form the epitaxial layer. In this embodiment, the preset growth temperature ranges from 800°C to 950°C. In fact, the preset growth temperature range can be adjusted and optimized according to factors such as the characteristics of the epitaxial material, the required crystal structure, the doping level, and the growth dynamics, and is not limited thereto.

[0044] As an example, the epitaxial layer includes a single crystal silicon layer or other suitable semiconductor material layer.

[0045] As an example, the epitaxial layer also includes doping ions.

[0046] Specifically, the doping ions may be P-type ions such as boron (B) or gallium (Ga), or may be N-type ions such as phosphorus (P) or arsenic (As).

[0047] Specifically, the substrate is located on a carrier plate in the epitaxial cavity, and each substrate corresponds to a carrier plate. In this embodiment, the substrate does not rotate, that is, the position of the substrate relative to the epitaxial cavity remains unchanged. Therefore, when the epitaxial layer is formed at different points on the substrate, the quality of its film layer will be affected by the growth conditions at the corresponding position in the epitaxial cavity, including but not limited to the cavity temperature, gas flow rate, pressure, etc. For example, if the cavity temperature at a certain position in the epitaxial cavity is high, then the epitaxial layer epitaxially grown at the corresponding position may have different doping concentrations, thicknesses or crystal structures. This correspondence makes it possible to judge the possible differences in the growth conditions at the corresponding positions in the epitaxial cavity by analyzing the film characteristics of the epitaxial layer at different points. Specifically, by accurately measuring the doping concentration, thickness or other characteristics of the epitaxial layer at different points, the differences in the growth conditions at different positions in the corresponding epitaxial cavity can be evaluated, which helps to further optimize the growth conditions in the epitaxial cavity at the corresponding points to improve the quality of the epitaxial layer.

[0048] Please perform step S3: measure the thickness of the epitaxial layer to obtain the thickness distribution of the epitaxial layer on the substrate.

[0049] As an example, an optical measurement device is used to perform non-contact measurement on the thickness of the epitaxial layer.

[0050] As an example, the optical measurement device comprises a spectroscopic reflectometer or an ellipsometer.

[0051] As an example, a plurality of points are selected on the surface of the epitaxial layer to measure the thickness of the epitaxial layer.

[0052] Specifically, in this embodiment, a spectroscopic reflectometer is used to measure at multiple preselected points on the surface of the epitaxial layer, and the measurement results at each point are recorded. By analyzing these data, the thickness distribution of the epitaxial layer on the substrate can be obtained.

[0053] Specifically, in one example, five evenly distributed points are selected on the surface of the epitaxial layer for measurement.

[0054] Of course, in other examples, in order to obtain more comprehensive thickness data of the epitaxial layer, other uniformly distributed points on the surface of the epitaxial layer may be selected for measurement. To ensure that the selected multiple points can accurately and comprehensively reflect the temperature distribution in the epitaxial cavity, the specific number of points and the specific positions of the multiple points on the epitaxial layer should be determined according to the internal structure of the epitaxial cavity, including geometric features and heat flow paths, etc., which are not limited here.

[0055] Please execute the step S4: determine the temperature and temperature distribution of the epitaxial cavity according to the thickness distribution of the epitaxial layer on the substrate and the pre-established mapping relationship between the thickness of the epitaxial layer and the temperature of the epitaxial cavity.

[0056] As an example, establishing a mapping relationship between the epitaxial layer thickness and the epitaxial cavity temperature includes the following steps:

[0057] (1) providing a plurality of test substrates;

[0058] (2) setting a series of different epitaxial chamber temperature conditions, and forming an epitaxial layer on each of the test substrates under each of the epitaxial chamber temperature conditions;

[0059] (3) Measuring and recording thickness data of the epitaxial layer formed under each temperature condition of the epitaxial cavity, and establishing a mapping relationship between the thickness of the epitaxial layer and the temperature of the epitaxial cavity according to the thickness data.

[0060] Specifically, the test substrate includes a silicon substrate, a germanium substrate, a germanium silicon substrate, a silicon carbide substrate, a sapphire substrate or other suitable semiconductor substrates.

[0061] As an example, the temperature of the epitaxial chamber is set in the range of 800° C. to 950° C. (including the endpoint values).

[0062] Specifically, the epitaxial cavity temperature refers to the temperature inside the epitaxial cavity during the epitaxial growth process. The temperature inside the epitaxial cavity will affect the chemical activity, reaction rate and deposition rate of the reaction gas in the epitaxial cavity, and then affect the film quality or thickness and other characteristics of the deposited epitaxial layer. When other epitaxial growth conditions remain unchanged, that is, when the growth parameters such as reaction gas flow, mixing ratio, epitaxial growth pressure and epitaxial time are ensured to be constant, the corresponding relationship between the thickness of the epitaxial layer and the temperature of the epitaxial cavity can be obtained by changing the temperature of the epitaxial cavity. For example, when other epitaxial growth conditions are constant, the thickness of the epitaxial layer may increase with the increase of the temperature of the epitaxial cavity. This specific corresponding relationship needs to be determined by experiment. It should be noted that in this embodiment, the range of the epitaxial cavity temperature set is selected based on experimental requirements, and does not mean that the range of the epitaxial cavity temperature is limited to this. In fact, the temperature range can be adjusted according to the material, growth conditions or application requirements of the epitaxial layer.

[0063] As an example, a thermocouple is used to measure and ensure that the temperature of each epitaxial chamber is a set value.

[0064] As an example, the thermocouples are distributed at different positions of the epitaxial cavity.

[0065] Specifically, this embodiment monitors and ensures that the temperature of the corresponding area of ​​the epitaxial cavity reaches the set value by installing thermocouples at different positions of the epitaxial cavity. Then epitaxial growth is performed to form the epitaxial layer. Afterwards, an optical measurement device is used to measure the thickness of the epitaxial layer formed in the corresponding area of ​​the epitaxial cavity, and these data are collected for analysis and fitting to establish a mapping relationship between the thickness of the epitaxial layer and the temperature of the epitaxial cavity. Using this mapping relationship, and by substituting the thickness data of the epitaxial layer at multiple points in step S3 into the established mapping relationship, the temperature of the epitaxial cavity corresponding to each point can be obtained, that is, the actual temperature and temperature distribution of the epitaxial cavity can be inferred.

[0066] As an example, a method for establishing a mapping relationship between the epitaxial layer thickness and the epitaxial chamber temperature includes a curve fitting method.

[0067] like Figure 2 As shown, it is a mapping relationship curve between the thickness of the epitaxial layer and the temperature of the epitaxial chamber established in a specific example. In this example, the test substrate is a silicon substrate, and the epitaxial layer is a single crystal silicon layer. The single crystal silicon layer is formed by epitaxial growth at different epitaxial chamber temperatures (800°C, 830°C, 860°C, 890°C, 920°C, 950°C, 980°C, etc.). The formation of the single crystal silicon layer mainly includes the following steps: placing the silicon substrate in the epitaxial chamber, and introducing dichlorosilane gas and hydrogen chloride gas as reaction gases to form the single crystal silicon layer. Among them, the flow rate of the dichlorosilane gas is 0.3 to 1.3 standard liters per minute (slm), the flow rate of the hydrogen chloride gas is 0.7 to 1.7 slm, the pressure range of the epitaxial chamber is 500 to 700 torr, and the time range of epitaxial growth is 1600 to 2100 s. At the same time, diborane gas is introduced during the reaction process to form P-type doping in the single crystal silicon layer, and the proportion of diborane gas in the total gas flow does not exceed 44%. Afterwards, a spectroscopic reflectometer is used to measure the thickness data of the epitaxial layer formed under different epitaxial cavity temperature conditions, and the thickness data is analyzed and processed to obtain the mapping relationship curve. The mapping relationship curve can reflect the thickness value of the epitaxial layer formed under each epitaxial cavity temperature condition. By using the mapping relationship curve and according to the thickness distribution data of the epitaxial layer on the substrate obtained in step S3, the temperature values ​​at different positions of the epitaxial cavity corresponding to different points of the epitaxial layer can be obtained, that is, the temperature distribution of the epitaxial cavity can be inferred.

[0068] Please execute the step S5: perform temperature calibration on the epitaxial cavity according to the determined temperature and temperature distribution of the epitaxial cavity.

[0069] Specifically, when the temperature at a certain position in the epitaxial cavity is not equal to the preset cavity temperature, the temperature regulating device at the corresponding position of the epitaxial cavity is adjusted to calibrate the epitaxial cavity temperature to the preset value.

[0070] As an example, the temperature regulating device includes a heater and a cooling device.

[0071] As an example, when the thickness of some points of the epitaxial layer deviates from the preset thickness by more than a set range, the temperature of the epitaxial cavity is calculated based on the mapping relationship between the thickness of the epitaxial layer and the temperature of the epitaxial cavity, and the temperature regulating device at the corresponding position of the epitaxial cavity is adjusted to calibrate the temperature of the epitaxial cavity.

[0072] As an example, the preset thickness is determined by a mapping relationship between the thickness of the epitaxial layer and the temperature of the epitaxial chamber.

[0073] As an example, the setting range is -2 to 2 angstroms.

[0074] Specifically, Figure 2 As shown, when other epitaxial growth conditions are constant, when the epitaxial layer is formed under the epitaxial chamber temperature condition of 920°C, the preset thickness of the epitaxial layer is 5.054 angstroms. If the measured thickness of the epitaxial layer at some points deviates from the preset thickness by more than ±2 angstroms, that is, it is not between 3.054 angstroms and 7.054 angstroms, it indicates that the actual value of the epitaxial chamber temperature at the corresponding position does not match the preset 920°C. In order to calibrate the deviation of the epitaxial chamber temperature, the following steps can be performed:

[0075] (1) Substituting the thickness values ​​at these points into the mapping relationship between the thickness of the epitaxial layer and the temperature of the epitaxial cavity, the actual temperature of the epitaxial cavity is calculated.

[0076] (2) According to the actual temperature of the epitaxial cavity, the heater or cooling device at the corresponding position of the epitaxial cavity is adjusted to calibrate the temperature of the epitaxial cavity to 920° C., that is, to ensure that the temperature of the epitaxial cavity reaches a preset value.

[0077] In summary, the present invention provides a method for monitoring and calibrating the temperature of an epitaxial cavity, comprising the following steps: providing at least one substrate; forming an epitaxial layer on the substrate at a preset growth temperature in the epitaxial cavity, and the substrate does not rotate during the formation of the epitaxial layer; measuring the thickness of the epitaxial layer to obtain the thickness distribution of the epitaxial layer on the substrate; determining the temperature and temperature distribution of the epitaxial cavity according to the thickness distribution of the epitaxial layer on the substrate and the pre-established mapping relationship between the thickness of the epitaxial layer and the temperature of the epitaxial cavity; and calibrating the temperature of the epitaxial cavity according to the determined temperature and temperature distribution of the epitaxial cavity. The present invention realizes effective monitoring of the temperature of the epitaxial cavity by directly measuring the thickness of the epitaxial layer. Based on the measurement results, the present invention can perform targeted calibration on the temperature settings at different positions, thereby optimizing the epitaxial growth conditions and improving the growth quality of the epitaxial layer. The present invention adopts a method of accurate thickness measurement and establishing a mapping relationship between the thickness of the epitaxial layer and the cavity temperature, so that the monitoring process is more accurate, especially under low temperature conditions, which can significantly improve the accuracy of epitaxial cavity temperature monitoring and the reliability of calibration. In addition, the method significantly simplifies the process of epitaxial cavity temperature monitoring, making the operation more convenient and effectively improving production efficiency. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

[0078] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A method for monitoring and calibrating the temperature of an epitaxial cavity, characterized in that: The following steps are involved: providing at least one substrate; In an epitaxial cavity, forming an epitaxial layer on the substrate at a preset growth temperature, during the process of forming the epitaxial layer, the substrate does not rotate; Measuring the thickness of the epitaxial layer to obtain the thickness distribution of the epitaxial layer on the substrate; Determining the temperature and temperature distribution of the epitaxial cavity according to the thickness distribution of the epitaxial layer on the substrate and a pre-established mapping relationship between the thickness of the epitaxial layer and the temperature of the epitaxial cavity; The epitaxial cavity is temperature calibrated according to the determined temperature and temperature distribution of the epitaxial cavity.

2. The method for monitoring and calibrating the temperature of an epitaxial chamber according to claim 1, characterized in that: The preset growth temperature ranges from 800°C to 950°C.

3. The method for monitoring and calibrating the temperature of an epitaxial cavity according to claim 1, characterized in that: Establishing a mapping relationship between the epitaxial layer thickness and the epitaxial cavity temperature comprises the following steps: providing a plurality of test substrates; Setting a series of different epitaxial chamber temperature conditions, and forming an epitaxial layer on each of the test substrates under each of the epitaxial chamber temperature conditions; The thickness data of the epitaxial layer formed under each temperature condition of the epitaxial cavity is measured and recorded, and a mapping relationship between the thickness of the epitaxial layer and the temperature of the epitaxial cavity is established according to the thickness data.

4. The method for monitoring and calibrating the temperature of an epitaxial cavity according to claim 3, characterized in that: The method for establishing the mapping relationship between the epitaxial layer thickness and the epitaxial chamber temperature includes a curve fitting method.

5. The method for monitoring and calibrating the temperature of an epitaxial chamber according to claim 1, characterized in that: The epitaxial layer includes a single crystal silicon layer.

6. The method for monitoring and calibrating the temperature of an epitaxial chamber according to claim 1, characterized in that: A plurality of points are selected on the surface of the epitaxial layer to measure the thickness of the epitaxial layer.

7. The method for monitoring and calibrating the temperature of an epitaxial chamber according to claim 1, characterized in that: When the thickness of some points of the epitaxial layer deviates from the preset thickness by more than a set range, the temperature of the epitaxial cavity is calculated according to the mapping relationship between the thickness of the epitaxial layer and the temperature of the epitaxial cavity, and the temperature regulating device at the corresponding position of the epitaxial cavity is adjusted to calibrate the temperature of the epitaxial cavity.

8. The method for monitoring and calibrating the temperature of an epitaxial chamber according to claim 7, characterized in that: The setting range is -2 to 2 angstroms.

9. The method for monitoring and calibrating the temperature of an epitaxial chamber according to claim 1, characterized in that: Optical measuring equipment is used to perform non-contact measurement on the thickness of the epitaxial layer.

10. The method for monitoring and calibrating the temperature of an epitaxial chamber according to claim 9, characterized in that: The optical measurement equipment includes a spectroscopic reflectometer or an ellipsometer.

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