Package substrate and manufacturing method thereof, chip package and electronic equipment
By setting a hollow area and a metal barrier ring or barrier disc on the packaging substrate, the flow path of tin solder is blocked, and the problem of tin overflow of the packaging substrate is solved, improving product reliability and connection reliability.
Patent Information
- Application Number
- CN202310860867.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-07-12
- Publication Date
- 2025-01-14
AI Technical Summary
In the prior art, tin overflow occurs in the production and use of packaging substrates, resulting in short-circuit problems. The main reason is that the tin solder expands into the layered interface or gap, causing tin overflow.
A packaging substrate is designed to block the flow path of the tin solder solder and metal connecting plate in the hollow area on the substrate, and to prevent the occurrence of tin overflow.
Effectively block the flow path of tin solder, reduce the possibility of tin short circuit, and improve product reliability and connection reliability.
Smart Images
Figure CN119314951A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of packaging technology, and in particular to a packaging substrate and a manufacturing method thereof, chip packaging, and electronic equipment. Background Art
[0002] The packaging substrate is a commonly used packaging structure component in chip packaging. Take the flip chip packaging product as an example, refer to Figure 1 and Figure 2 ( Figure 1 As shown in the detailed enlarged schematic diagram at position A1, the package substrate 1 and the chip 2 (die) are connected together by reflow soldering through tin solder 3 (solder). The surface of the package substrate 1 is provided with a copper layer 12 (i.e., a copper connection pad) and a solder resist layer 11, and the copper layer 12 is electrically connected to the chip 2 through the tin solder 3.
[0003] At present, flip chip products often fail due to tin overflow during production and use. The main reasons for tin overflow are: Figure 2 As shown, firstly, during the reliability process, the package structure as a whole will absorb moisture, and at the high temperature of reflow, moisture will cause delamination between the solder resist layer 11 and the copper layer 12 (i.e., the copper connection pad), so that tin (3) melts and expands into the delamination interface, causing tin overflow, and then a short circuit. Secondly, during the high temperature stage of reflow, the chip 2 deforms and generates stress that exceeds the bonding force between the solder resist layer 11 and the copper layer 12, causing the solder resist layer 11 to be torn along the bonding surface to form a gap S, and the tin (3) melts and expands and squeezes into the gap S to cause tin overflow, and even tin bridging occurs, resulting in a short circuit.
[0004] The tin overflow phenomenon caused by the above two forms will cause electrical failure of the product. Summary of the invention
[0005] The present application provides a packaging substrate and a manufacturing method thereof, a chip package, and an electronic device, which can prevent tin overflow from occurring by blocking the tin overflow path.
[0006] The present application provides a packaging substrate including: a substrate and a metal connection pad, a solder resist layer, and a metal barrier ring arranged on the substrate. Among them, a hollow area is provided in the solder resist layer to expose the metal connection pad, and the solder resist layer covers the edge of the metal connection pad on the outside of the hollow area, and the metal connection pad exposed in the hollow area can be electrically connected to the chip through tin solder. The metal barrier ring is arranged along the inner edge of the hollow area, and a metal connection is formed between the bottom of the metal barrier ring and the metal connection pad, and there will be no delamination problem. Based on the setting of the metal connection pad, the flow path of the tin solder located on the inner side thereof can be blocked, and the tin solder is prevented from flowing from the inner side to the outer side of the metal barrier ring. In this way, since the flow path of tin is blocked, the tin overflow phenomenon can be prevented, the possibility of tin overflow short circuit is reduced, and the reliability of the product is improved.
[0007] In some possible implementations, the outer side of the metal barrier ring contacts the solder resist layer to avoid leaving a gap between the metal barrier ring and the solder resist layer, thereby better blocking the flow path of the tin solder. Even if delamination and gaps occur between the metal connecting pad and the solder resist layer, the problem of tin overflow and short circuit will not occur.
[0008] In some possible implementations, the top of the metal barrier ring protrudes from the surface of the solder mask layer, thereby preventing the tin solder from overflowing from the top of the metal barrier ring to a greater extent and better blocking the flow path of the tin solder.
[0009] In some possible implementation methods, the surface of the metal connection pad can be treated and tin solder can be provided on the surface of the metal connection pad, such as pre-tinning the metal connection pad (also known as solder on pad, which can be referred to as SOP) and pre-fabricating small solder balls (micro balls, which can be referred to as uball), etc., to improve the contact performance of the surface of the metal connection pad and improve the connection reliability between the packaging substrate and the chip.
[0010] In some possible implementations, both the metal connection pad and the metal barrier ring include copper.
[0011] The present application also provides a packaging substrate, which includes: a substrate and a metal connection pad, a solder resist layer, and a metal blocking disk arranged on the substrate. Among them, a hollow area is provided in the solder resist layer to expose the metal connection pad, and the solder resist layer covers the edge of the metal connection pad on the outside of the hollow area. The metal blocking disk covers the metal connection pad located in the hollow area and the solder resist layer on the side, and the metal blocking disk is in a U-shaped structure in the hollow area. In this case, the metal blocking disk can block the flow path of the tin solder located on its inner side, and prevent the tin solder located on the inner side of the U-shaped opening from flowing to the outside. In this way, since the flow path of tin is blocked, tin overflow can be prevented from occurring, reducing the possibility of tin overflow short circuit, thereby improving the reliability of the product.
[0012] In some possible implementations, the edge of the metal blocking plate extends to cover the surface of the solder resist layer. In this case, even if delamination and gaps occur between the metal connection plate and the solder resist layer, the problem of tin overflow short circuit will not occur.
[0013] In some possible implementation methods, the surface of the metal blocking plate can be treated and tin solder can be provided on the surface of the metal blocking plate, such as pre-tinning (SOP) and pre-forming small solder balls (uball) on the metal blocking plate, so as to improve the contact performance of the surface of the metal blocking plate and improve the connection reliability between the packaging substrate and the chip.
[0014] In some possible implementations, both the metal connection pad and the metal barrier pad include copper.
[0015] The present application also provides a method for manufacturing a packaging substrate, which may include: manufacturing a substrate, and sequentially manufacturing a plurality of metal connection pads and a solder resist layer on the substrate; wherein a hollow area is provided in the solder resist layer to expose the metal connection pad, and the solder resist layer covers the edge of the metal connection pad on the outside of the hollow area. A seed layer and a mask layer are manufactured on the solder resist layer, and the mask layer is exposed and developed to expose the annular seed layer at the inner edge of the hollow area. A metal blocking ring is formed on the surface of the annular seed layer by an electroplating process.
[0016] The present application also provides a method for manufacturing a packaging substrate, which may include: manufacturing a substrate, and sequentially manufacturing a plurality of metal connection pads and a solder resist layer on the substrate; wherein a hollow area is provided in the solder resist layer to expose the metal connection pad, and the solder resist layer covers the edge of the metal connection pad on the outside of the hollow area. A seed layer and a mask layer are manufactured on the solder resist layer, and the mask layer is exposed and developed to expose the seed layer in the hollow area. A U-shaped metal blocking disk is formed on the surface of the seed layer exposed in the hollow area by an electroplating process.
[0017] The present application also provides a chip package, which includes a packaging substrate and a chip provided in any possible implementation method as described above; the chip is electrically connected to a metal connection pad in the packaging substrate through a solder ball.
[0018] The present application also provides an electronic device, which includes a circuit board and a chip package provided in any of the possible implementation methods described above, wherein the chip package is electrically connected to the circuit board. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] Figure 1 A schematic diagram of the structure of a chip package provided in the prior art;
[0020] Figure 2 for Figure 1 A detailed enlarged schematic diagram of the A1 area;
[0021] Figure 3 A schematic diagram of the structure of a packaging substrate provided in an embodiment of the present application;
[0022] Figure 4 for Figure 3 A top view of
[0023] Figure 5 A schematic diagram of a chip package structure provided in an embodiment of the present application;
[0024] Figure 6 A schematic diagram of the structure of a packaging substrate provided in an embodiment of the present application;
[0025] Figure 7 A schematic diagram of the structure of a packaging substrate provided in an embodiment of the present application;
[0026] Figure 8 A flow chart of a method for manufacturing a packaging substrate provided in an embodiment of the present application;
[0027] Fig. 9 A schematic diagram of a manufacturing process of a packaging substrate provided in an embodiment of the present application;
[0028] Fig.10 A schematic diagram of the structure of a packaging substrate provided in an embodiment of the present application;
[0029] Fig.11 A schematic diagram of a chip package structure provided in an embodiment of the present application;
[0030] Fig.12 A schematic diagram of the structure of a packaging substrate provided in an embodiment of the present application;
[0031] Fig.13 A schematic diagram of the structure of a packaging substrate provided in an embodiment of the present application;
[0032] Fig.14 A flow chart of a method for manufacturing a packaging substrate provided in an embodiment of the present application;
[0033] Fig.15 A schematic diagram of a manufacturing process of a packaging substrate provided in an embodiment of the present application. DETAILED DESCRIPTION
[0034] In order to make the purpose, technical solutions and advantages of this application clearer, the technical solutions in this application will be clearly and completely described below in conjunction with the drawings in this application. Obviously, the described embodiments are part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.
[0035] The terms "first", "second", etc. in the specification embodiments, claims and drawings of the present application are only used for the purpose of distinguishing descriptions, and cannot be understood as indicating or implying relative importance, nor can they be understood as indicating or implying order. "And / or" is used to describe the association relationship of associated objects, indicating that three relationships may exist. For example, "A and / or B" can mean: only A exists, only B exists, and A and B exist at the same time, where A and B can be singular or plural. The character " / " generally indicates that the objects associated before and after are in an "or" relationship. "At least one (item)" means one or more, and "multiple" means two or more. "Installation", "connection", "connected", etc. should be understood in a broad sense, for example, it can be an electrical connection or a mechanical connection; it can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection, or it can be indirect through an intermediate medium, or it can be the internal connection of two elements. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, including a series of steps or units. Methods, systems, products or devices are not necessarily limited to those steps or units explicitly listed, but may include other steps or units that are not explicitly listed or inherent to these processes, methods, products or devices. "Up", "down", "left", "right", etc. are only used relative to the orientation of the components in the drawings. These directional terms are relative concepts. They are used for description and clarification relative to the description, which may change accordingly according to the change of the orientation of the components in the drawings.
[0036] An embodiment of the present application provides an electronic device, which may be a terminal device, such as a mobile phone, a tablet computer, a smart bracelet, or a personal computer (PC), a server, a workstation, etc. The present application does not limit the setting form of the electronic device.
[0037] The electronic device provided in the embodiment of the present application includes a printed circuit board (PCB) and a chip package electrically connected to the circuit board. The chip package includes a package substrate and a chip, and the package substrate and the chip are connected by solder (such as tin solder) (see Figure 1 ). As shown, the chip package may be a flip chip package, but is not limited thereto.
[0038] In order to solve the problem of tin overflow on the packaging substrate when the packaging substrate and the chip are welded with solder (such as tin solder) in the prior art, the embodiment of the present application provides a packaging substrate with a new structure, which blocks the flow path of tin by setting a metal barrier structure on the surface of the packaging substrate, thereby preventing tin overflow and improving the reliability of the product.
[0039] The structure of the novel packaging substrate provided in the present application is described in detail below by combining two metal barrier structures with different structures through specific embodiments.
[0040] Embodiment 1
[0041] refer to Figure 3 and Figure 4 ( Figure 3 ), the first embodiment provides a package substrate 10, which includes a substrate 100 and a solder resist layer 101, a plurality of metal connection pads 102 (pads), and a metal barrier ring 103a disposed on the substrate 100. The solder resist layer 101 can be a green oil solder resist layer, but is not limited thereto.
[0042] like Figure 3 As shown, a plurality of metal connection pads 102 are arranged on the surface of the substrate 100. The solder resist layer 101 is located on the plurality of metal connection pads 102, and a hollow area H is provided in the solder resist layer 101 to expose the middle area of the metal connection pad 102, and the solder resist layer 101 covers the edge area of the metal connection pad 102 outside the hollow area H. The metal connection pad 102 exposed in the hollow area H can be soldered to the chip 20 through the tin solder 30, thereby achieving electrical connection with the chip 20 (refer to Figure 5 ).
[0043] It can be understood that the solder resist layer 101 covers the edge area of the metal connection pad 102 around the hollow area H, that is, the edge of the metal connection pad 102 is overlapped with the solder resist layer 101, and there is a risk of delamination and gaps in the overlapping area between the metal connection pad 102 and the solder resist layer 101.
[0044] On this basis, reference Figure 3 As shown, in this embodiment, a metal barrier ring 103 a is disposed along the inner edge of the hollow area H, and a metal connection is formed between the bottom of the metal barrier ring 103 a and the metal connection plate 102 , and no delamination problem occurs.
[0045] In this case, refer to Figure 5 As shown, the metal barrier ring 103a can block the flow path of the tin solder 30 located inside it, preventing the tin solder 30 from flowing from the inside to the outside of the metal barrier ring 103a. In this way, since the flow path of tin is blocked, the tin overflow phenomenon can be prevented, the possibility of tin overflow short circuit is reduced, and the reliability of the product is improved.
[0046] In some possible implementations, the metal material used for the metal barrier ring 103a and the metal connection pad 102 may include copper. For example, the metal barrier ring 103a may be a copper ring, and the metal connection pad 102 may be a copper connection pad (Cu pad), but the present invention is not limited thereto.
[0047] In addition, refer to Figure 3 and Figure 5 As shown, in some possible implementation methods, the outer side of the metal barrier ring 103a can be arranged to contact the solder resist layer 101 to avoid leaving a gap between the metal barrier ring 103a and the solder resist layer 101, thereby better blocking the flow path of the tin solder 30. Even if delamination and gaps occur between the metal connecting plate 102 and the solder resist layer 101, the problem of tin overflow and short circuit will not occur.
[0048] Similarly, refer to Figure 3 and Figure 5 As shown, in some possible implementations, in order to better block the flow path of the tin solder 30, the top of the metal barrier ring 103a can be set to protrude from the surface of the solder resist layer 101, thereby preventing the tin solder from overflowing from the top of the metal barrier ring to a greater extent.
[0049] In addition, in order to improve the contact performance of the metal connection pad 102 surface, refer to Figure 6 and Figure 7 As shown, the metal connection pad 102 can be surface treated and tin solder 104 can be pre-set. In this case, the metal connection pad 102 can be better connected to the solder balls on the surface of the chip 20 through reflow soldering through the tin solder 104 set on the surface, thereby improving the connection reliability between the packaging substrate 10 and the chip 20.
[0050] For example, Figure 6 As shown, in some possible implementations, the surface of the metal connection pad 102 can be treated with a pre-tin (also known as solder on pad, SOP for short) surface treatment method, and tin solder 104 is pre-set on the surface of the metal connection pad 102 .
[0051] For example, in some possible implementations, Figure 7 As shown, the surface of the metal connection pad 102 can be treated by using a micro ball (also referred to as uball), and tin solder 104 is pre-set on the surface of the metal connection pad 102 .
[0052] It should be understood by those skilled in the art that, in the prior art, a T-pad (T pad flip chip, TPFC for short) surface treatment method may also be used for the metal connection pad 102, in which a T-pad (T pad) is electroplated on the surface of the metal connection pad 102. However, in this case, the T pad may be thin at the edges and thick in the middle, resulting in poor surface flatness and low energy efficiency.
[0053] Compared with the existing T pad, the metal barrier ring 103a is provided in this embodiment, which can prevent the occurrence of tin overflow while ensuring the flatness of the surface of the metal connection pad 102, thereby ensuring the relative consistency of the thickness of the entire packaging substrate; and the metal barrier ring 103a is thinner, which can also improve energy efficiency.
[0054] Of course, in order to prevent the surface of the exposed metal connection pad 102 from being oxidized, in some possible implementations, the surface of the exposed metal connection pad 102 can also be treated to form a protective layer on the surface of the exposed metal connection pad 102 by electroplating or immersion.
[0055] The present application does not impose any limitation on the configuration of the substrate 100 . In practice, the material and manufacturing method of the substrate 100 may be selected according to the requirements of the packaging substrate 10 .
[0056] For example, in some possible implementations, the substrate 100 may be a core substrate. In this case, the substrate 100 may include a middle portion as a core board and upper and lower portions as laminate boards.
[0057] For another example, in some possible implementations, the substrate 100 may be a coreless substrate, that is, the substrate 100 may use a coreless substrate. In this case, the substrate 100 may use a prepreg as a build-up material.
[0058] For another example, in some possible implementations, when the packaging substrate is an inorganic packaging substrate, the base material 100 may be an inorganic substrate, such as a ceramic substrate, a glass substrate, and the like.
[0059] For another example, in some possible implementations, when the packaging substrate is an organic packaging substrate, the base material 100 may be an organic substrate, such as a phenolic substrate, a polyester substrate, an epoxy resin substrate, and the like.
[0060] In addition, this embodiment 1 also provides a Figure 3 The method for manufacturing the packaging substrate shown in FIG. Figure 8 As shown, the production method may include:
[0061] Step 101: Reference Fig. 9 As shown in (a), a substrate 100 is manufactured, and a plurality of metal connection pads 102 and a solder resist layer 101 are sequentially manufactured on the substrate 100; wherein a hollow area H is provided on the solder resist layer 101 to expose the metal connection pad 102, and the solder resist layer 101 covers the edge of the metal connection pad 102 on the outer side of the hollow area H.
[0062] In some possible implementations, reference is made to Fig. 9 As shown in (a), the above step 101 may include: firstly manufacturing a core or coreless substrate 100; then, manufacturing a plurality of copper connection pads (102) on the surface of the substrate 100; next, manufacturing a green oil solder resist layer (101) on the plurality of copper connection pads 102, and manufacturing a hollow area H at a position corresponding to the copper connection pad (102) in the green oil solder resist layer (101) to expose the copper connection pad (102) in the middle area. Of course, the green oil solder resist layer (101) will cover the edge area of the copper connection pad (102).
[0063] Step 102: Reference Fig. 9 As shown in (b), a seed layer 110 and a mask layer 120 are formed on the solder resist layer 101, and the mask layer 120 is exposed and developed, so that a ring-shaped seed layer R is exposed at the inner edge of the hollow area H.
[0064] In some possible implementations, reference is made to Fig. 9 As shown in (b), the above step 102 may include: using a sputtering process (sputter) to sputter a copper layer on the surface of the green oil solder resist layer (101) as a copper seed layer 110; then, covering the surface of the seed layer 110 with a mask layer 120 (dry film), and exposing and developing the mask layer 120 to expose a ring-shaped seed layer R at the inner edge of the hollow area H.
[0065] Step 103, Reference Fig. 9 As shown in (c) and (d), a metal barrier ring 103a is formed on the surface of the annular seed layer R by an electroplating process, and the remaining mask layer 120 and seed layer 110 are removed.
[0066] In some possible implementations, step 103 may include: Fig. 9 As shown in (c), a copper plating process (Cu plating) is used to form a copper ring (103a) on the surface of the exposed annular seed layer R; then, referring to Fig. 9 As shown in (d), the remaining mask layer 120 is removed, and the seed layer 110 outside the copper ring (103a) is quickly etched away. In this case, the seed layer retained at the bottom of the copper ring can be regarded as a component of the metal barrier ring 103a.
[0067] Embodiment 2
[0068] like Fig.10 As shown, the second embodiment provides a packaging substrate 10, which includes a substrate 100 and a solder resist layer 101, a plurality of metal connection pads 102 (pads), and a metal blocking pad 103b arranged on the substrate 100.
[0069] Among them, the configuration of the substrate 100, the solder resist layer 101, and the plurality of metal connection plates 102 (pads) is basically the same as that in the aforementioned embodiment 1. For details, please refer to the corresponding description in the aforementioned embodiment 1, which will not be repeated here.
[0070] refer to Fig.10 As shown, unlike the metal blocking ring 103a used in the first embodiment, the metal blocking structure in the second embodiment uses a metal blocking plate 103b, which covers the surface of the metal connecting plate 102 in the hollow area H and extends to cover the solder resist layer 101 on the side of the hollow area H. That is to say, the metal blocking plate 103b is a metal layer in the hollow area H covering the hollow area H, and its cross-section is a U-shaped structure, and the opening of the solder resist layer 101 in the hollow area H is not filled.
[0071] In this case, refer to Fig.11 As shown, the metal blocking plate 103b can block the flow path of the tin solder 30 located inside it, and prevent the tin solder 30 located inside the U-shaped opening from flowing outward. In this way, since the flow path of tin is blocked, the tin overflow phenomenon can be prevented, the possibility of tin overflow short circuit is reduced, and the reliability of the product is improved.
[0072] For example, in some possible implementations, the metal material used for the metal blocking pad 103b and the metal connection pad 102 may include copper. For example, the metal blocking pad 103b and the metal connection pad 102 may both be copper pads.
[0073] In addition, refer to Fig.10 As shown, in order to better block the flow path of the tin solder 30, in some possible implementation methods, the edge of the metal blocking plate 103b can be arranged to extend to cover the surface of the solder resist layer 101. In this case, even if delamination and gaps occur between the metal connecting plate 102 and the solder resist layer 101, the problem of tin overflow short circuit will not occur.
[0074] In addition, in order to improve the contact performance of the surface of the metal blocking plate 103b, refer to Fig.12 and Fig.13As shown, the metal blocking plate 103b may be surface treated, and tin solder 104 may be pre-set on the surface of the metal blocking plate 103b located in the hollow area H. In this case, the metal blocking plate 103b can be better connected to the solder balls on the surface of the chip 20 through reflow soldering through the tin solder 104 set on the surface, thereby improving the connection reliability between the package substrate 10 and the chip 20.
[0075] For example, Fig.12 As shown, in some possible implementations, the surface of the metal blocking plate 103 b may be treated with a tin on prefabricated (SOP) surface treatment method, and tin solder 104 may be pre-disposed on the surface of the metal blocking plate 103 b.
[0076] For example, in some possible implementations, Fig.13 As shown, the surface of the metal blocking plate 103 b may be treated by using a small solder ball (uball), and tin solder 104 may be pre-set on the surface of the metal blocking plate 103 b.
[0077] Compared with the T-type pad (TPFC) in the prior art, the metal blocking plate 103b in this embodiment adopts a U-shaped structure with a smaller thickness. It can prevent tin overflow while ensuring the flatness of the surface of the metal blocking plate 103b, thereby ensuring the relative consistency of the thickness of the entire packaging substrate.
[0078] This embodiment 2 also provides a Fig.10 The method for manufacturing the packaging substrate shown in FIG. Fig.14 As shown, the production method may include:
[0079] Step 201, reference Fig.15 As shown in (a), a substrate 100 is manufactured, and a plurality of metal connection pads 102 and a solder resist layer 101 are sequentially manufactured on the substrate 100; wherein a hollow area H is provided on the solder resist layer 101 to expose the metal connection pad 102, and the solder resist layer 101 covers the edge of the metal connection pad 102 on the outer side of the hollow area H.
[0080] Step 201 is basically the same as step 101 in the first embodiment. For details, please refer to the description of the aforementioned step 101, which will not be repeated here.
[0081] Step 202: Reference Fig.15 As shown in (b), a seed layer 110 and a mask layer 120 are formed on the solder resist layer 101, and the mask layer 120 is exposed and developed to expose the seed layer 110 in the hollow region H.
[0082] In some possible implementations, for example Fig.15As shown in (b), the above step 202 may include: using a sputtering process (sputter) to sputter a copper layer on the surface of the green oil solder resist layer (101) as a copper seed layer 110. Then, a mask layer 120 (dry film) is covered on the surface of the seed layer 110, and the mask layer 120 is exposed and developed to expose the seed layer 110 at the bottom and side of the hollow area H. Of course, in practice, the exposure and development area can be appropriately expanded to expose the seed layer 110 surrounding the outer side of the hollow area H, that is, the exposure and development area is expanded to the mask layer 120 on the upper surface of the solder resist layer 101.
[0083] Step 203, reference Fig.15 As shown in (c) and (d), a U-shaped metal barrier disk 103b is formed on the surface of the seed layer 110 exposed in the hollow region H by an electroplating process, and the remaining mask layer 120 and the seed layer 110 are removed.
[0084] In some possible implementations, step 203 may include: Fig.15 As shown in (c), a copper electroplating process (Cu plating) is used to make a U-shaped metal blocking plate 103b on the surface of the seed layer 110 exposed in the hollow area H; then, referring to Fig.15 As shown in (d), the remaining mask layer 120 is removed, and the seed layer 110 located outside the metal barrier disk 103b is quickly etched away. In this case, the seed layer located at the bottom of the metal barrier disk 103b can be regarded as a component of the metal barrier disk 103b.
[0085] It should be understood that in the embodiments of the present application, the size of the serial numbers of the above-mentioned production processes does not mean the order of execution. The execution order of each production process should be determined by the specific function and internal logic of the device, and should not constitute any limitation on the implementation process of the embodiments of the present application.
[0086] In addition, for other relevant contents in the production method, the corresponding reference structure part can be referred to, which will not be repeated here; for other relevant settings in the aforementioned structure, they can be adjusted in combination with the aforementioned production method and other related production methods, which will not be repeated here one by one.
[0087] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.
Claims
1. A packaging substrate, characterized in that: include: A substrate and a metal connection pad, a solder resist layer, and a metal barrier ring disposed on the substrate; The solder resist layer is provided with a hollow area to expose the metal connection pad, and the solder resist layer covers the edge of the metal connection pad on the outer side of the hollow area; The metal barrier ring is arranged along the inner edge of the hollow area, and the bottom of the metal barrier ring is connected to the metal connection plate.
2. The packaging substrate according to claim 1, characterized in that: The outer side of the metal barrier ring contacts the solder resist layer.
3. The packaging substrate according to claim 1 or 2, characterized in that: The top of the metal barrier ring protrudes from the surface of the solder resist layer.
4. The packaging substrate according to any one of claims 1 to 3, characterized in that: The packaging substrate is provided with tin solder on the surface of the metal connection pad located inside the metal barrier ring.
5. The packaging substrate according to any one of claims 1 to 4, characterized in that: The metal connection pad and the metal barrier ring both include copper.
6. A packaging substrate, characterized in that: include: A substrate and a metal connection pad, a solder resist layer, and a metal blocking pad arranged on the substrate; The solder resist layer is provided with a hollow area to expose the metal connection pad, and the solder resist layer covers the edge of the metal connection pad on the outer side of the hollow area; The metal blocking plate covers the metal connection plate located in the hollow area and the solder resist layer on the side, and the metal blocking plate is in a U-shaped structure in the hollow area.
7. The packaging substrate according to claim 6, characterized in that: The edge of the metal prevention plate extends to cover the surface of the solder resist layer.
8. The packaging substrate according to claim 6 or 7, characterized in that: The packaging substrate is provided with tin solder on the surface of the metal blocking plate located in the hollow area.
9. The packaging substrate according to any one of claims 6 to 8, characterized in that: The metal connection pad and the metal blocking pad both include copper.
10. A method for manufacturing a packaging substrate, characterized in that: include: A substrate is manufactured, and a plurality of metal connection pads and a solder resist layer are manufactured on the substrate in sequence; wherein a hollow area is provided in the solder resist layer to expose the metal connection pad, and the solder resist layer covers the edge of the metal connection pad on the outer side of the hollow area; Making a seed layer and a mask layer on the solder resist layer, and exposing and developing the mask layer to expose the annular seed layer at the inner edge of the hollow area; A metal barrier ring is formed on the annular surface of the seed layer by an electroplating process.
11. A method for manufacturing a packaging substrate, characterized in that: include: A substrate is manufactured, and a plurality of metal connection pads and a solder resist layer are manufactured on the substrate in sequence; wherein a hollow area is provided in the solder resist layer to expose the metal connection pad, and the solder resist layer covers the edge of the metal connection pad on the outer side of the hollow area; Making a seed layer and a mask layer on the solder resist layer, and exposing and developing the mask layer to expose the seed layer in the hollow area; A metal blocking disk with a U-shaped structure is formed on the surface of the seed layer exposed in the hollow area through an electroplating process.
12. A chip package, characterized in that: Comprising the packaging substrate and the chip according to any one of claims 1 to 9; The chip is electrically connected to the metal connection pad in the packaging substrate through solder balls.
13. An electronic device, characterized in that: The invention comprises a circuit board and the chip package as claimed in claim 12, wherein the chip package is electrically connected to the circuit board.