Active metal brazing substrate material containing aluminum element and manufacturing method thereof

Abstract

The invention discloses an active metal brazing substrate material containing an aluminum element and a manufacturing method of the active metal brazing substrate material. The substrate material comprises a ceramic substrate layer, a first hard welding layer, a second hard welding layer and a conductive metal layer which are stacked in sequence. The first brazing layer includes a first metal composite material including metallic silver (Ag), metallic copper (Cu), and a first active metal component. Based on 100 parts by weight of the total weight of the first metal composite material, the content of silver is not less than 50 parts by weight. The second braze layer includes a second metal composite material including metallic aluminum (Al), metallic copper (Cu), and a second active metal component, and does not include metallic silver. Based on 100 parts by weight of the total weight of the second metal composite material, the content of aluminum is not less than 40 parts by weight. The total thickness of the first and second braze layers is not less than 12 microns and the thickness of the first braze layer is not less than 5 microns. Therefore, the use amount of silver is effectively reduced, the brazing temperature is reduced to below 900 DEG C, the influence of high temperature on the metal performance is reduced, and meanwhile, the material and manufacturing cost is reduced.

Description

Technical Field

[0001] The present application relates to a substrate material, and in particular to an active metal brazing (AMB) substrate material containing aluminum elements and a manufacturing method thereof. Background Art

[0002] Driven by the energy-saving and carbon-reduction policies of various countries, the global electric vehicle market is booming. With the launch of 800-volt high-voltage models by major car manufacturers in recent years, the demand for silicon carbide (SiC) ceramic substrate materials has grown rapidly. However, the power components based on silicon carbide (SiC) ceramic substrate materials are constantly improving in terms of voltage, frequency and operating temperature, so that ceramic substrate materials also need to have better heat dissipation capabilities and reliability.

[0003] The widely used direct-bonding-copper (DBC) ceramic substrate is prepared by eutectic bonding, and there is no bonding material between the copper layer and the ceramic substrate. However, during high-temperature operation, due to the different thermal expansion coefficients between the copper layer and the ceramic substrate (such as Al2O3 or AlN), large thermal stress is often generated, causing the copper layer to peel off from the surface of the ceramic substrate. Therefore, traditional direct-bonding-copper ceramic substrates have been unable to meet the packaging requirements of high temperature, high power, high heat dissipation and high reliability.

[0004] Currently, the mainstream substrate materials are gradually shifting from direct copper-clad ceramic substrates to active metal brazing (AMB) substrate materials.

[0005] Active metal brazing substrate materials utilize the properties of active metal elements (such as Ti, Zr, Ta, Nb, V, Hf, etc.) that can wet the surface of ceramic substrates to braze the ultra-thick copper foil onto the ceramic substrate at high temperatures. The brazing layer formed between the copper layer and the ceramic substrate by the active metal brazing process has a higher connection strength.

[0006] Among the common active metal brazing paste materials, silver-copper-titanium (Ag-Cu-Ti) is a commonly used metal composite material. In the above silver-copper-titanium metal composite material, the silver content is usually more than 50% (weight percentage concentration), and even up to 70%.

[0007] Generally, the brazing temperature of Ag-Cu-Ti used for active metal brazing paste materials usually needs to reach above 900°C (e.g., 915°C). The solder layer formed by the above active metal brazing contains a large amount of metallic silver (precious metal), which makes the material cost and manufacturing cost of active metal brazing ceramic substrates high. Furthermore, the electromigration problem caused by the metallic silver remaining after the etching process has always been a problem that needs to be solved. Summary of the invention

[0008] The technical problem to be solved by the present application is to provide an active metal brazing substrate material containing aluminum element and a manufacturing method thereof in view of the deficiencies in the prior art, which reduces the amount of metallic silver used and reduces the brazing temperature to below 900°C, thereby reducing the impact of high temperature on metal properties and at the same time reducing material costs and process costs.

[0009] In order to solve the above technical problems, one of the technical solutions adopted in the present application is to provide an active metal brazing substrate material containing aluminum elements, including: a ceramic substrate layer; an active metal layer, including: a first brazing layer, which is arranged on one side surface of the ceramic substrate layer; wherein the composition of the first brazing layer includes a first metal composite material, which includes metal silver (Ag), metal copper (Cu) and a first active metal component; based on the total weight of the first metal composite material being 100 parts by weight, the content of the metal silver is not less than 50 parts by weight; and a second brazing layer, which is arranged on the first brazing layer away from the ceramic on one side surface of the substrate layer; wherein the composition of the second hard solder layer comprises a second metal composite material, which comprises metal aluminum (Al), metal copper (Cu), and a second active metal component; based on the total weight of the second metal composite material being 100 parts by weight, the content of the metal aluminum is not less than 40 parts by weight, and the second metal composite material does not contain metal silver; wherein the sum of the thicknesses of the first hard solder layer and the second hard solder layer is at least not less than 12 microns, and the thickness of the first hard solder layer is at least not less than 5 microns; and a conductive metal layer, which is arranged on the side surface of the second hard solder layer away from the first hard solder layer.

[0010] Optionally, based on the total weight of all metal components in the active metal layer being 100wt%, the content of the metal aluminum is between 25wt% and 48wt%, the content of the metal silver is not more than 50wt%, the total content of the first active metal component and the second active metal component is between 0.3wt% and 8wt%, and the metal copper (Cu) is the remaining metal component.

[0011] Optionally, in the active metal layer, a thickness ratio between the thickness of the first brazing layer and the thickness of the second brazing layer is between 15% and 50% and 50% and 85%.

[0012] Optionally, the first active metal component and the second active metal component are respectively selected from at least one of the material group consisting of: titanium (Ti), zirconium (Zr), tantalum (Ta), niobium (Nb), vanadium (V), hafnium (Hf) and hydrides of the above metals.

[0013] Optionally, the ceramic substrate layer is at least one of a silicon nitride ceramic substrate, a silicon carbide ceramic substrate, an aluminum nitride ceramic substrate and an aluminum oxide ceramic substrate; and the conductive metal layer is at least one of a metal copper foil, a metal aluminum foil and a copper-aluminum alloy foil.

[0014] Optionally, the active metal layer needs to be heated to a brazing temperature not greater than 900° C., and the ceramic substrate layer and the conductive metal layer have a peel strength of not less than 50 N / cm through welding of the active metal layer.

[0015] Optionally, during vacuum and high-temperature sintering, the first active metal component in the first hard solder layer can wet the side surface of the ceramic substrate layer and react with the ceramic material of the ceramic substrate layer to enhance the bonding strength between the active metal layer and the ceramic substrate layer; the second hard solder layer can react with the metal component of the conductive metal layer at the interface to undergo a micron-scale eutectic reaction to form a strong eutectic structure, thereby enabling the active metal layer to be tightly bonded to the conductive metal layer.

[0016] In order to solve the above-mentioned technical problems, another technical solution adopted in the present application is to provide a method for manufacturing an active metal brazing substrate material, comprising: implementing a first brazing layer preparation operation, including: applying a first active solder paste on a side surface of a ceramic substrate layer, and drying to form a first brazing layer; wherein the first active solder paste comprises a first active solder powder, which is composed of metal silver powder, metal copper powder and a first active metal powder; wherein based on 100 parts by weight of the first active solder powder, the content of the metal silver powder is not less than 50 parts by weight; implementing a second brazing layer preparation operation, including: applying a second active solder paste on a side surface of the first brazing layer away from the ceramic substrate layer, and drying to form a second brazing layer; wherein the second active solder paste The paste includes a second active solder powder, which is composed of metal aluminum powder, metal copper powder and a second active metal powder; wherein based on 100 parts by weight of the second active solder powder, the content of the metal aluminum powder is not less than 40 parts by weight; wherein the second active solder powder does not contain metal silver powder; and implementing a conductive metal layer preparation operation, which includes: disposing a conductive metal layer on the surface of the second hard solder layer on the side away from the first hard solder layer, and hard soldering the conductive metal layer to the ceramic substrate layer through an active metal layer composed of the first hard solder layer and the second hard solder layer under a vacuum high-temperature sintering process; wherein the sum of the thickness of the first hard solder layer and the second hard solder layer is at least not less than 12 microns and the thickness of the first hard solder layer is not less than 5 microns.

[0017] Optionally, the weight ratio of the metal silver powder in the first active solder powder; the metal copper powder: the first active metal powder is between 50-75:20-48:2-5; the weight ratio of the metal aluminum powder in the second active solder powder; the metal copper powder: the second active metal powder is between 45-75:20-50:0.5-5.

[0018] Optionally, the vacuum high temperature sintering treatment procedure includes: a first stage heat treatment procedure with a temperature condition not greater than 500°C and a second stage heat treatment procedure with a temperature condition not less than 800°C.

[0019] The beneficial effect of the present application is that the active metal brazing substrate material containing aluminum elements and the manufacturing method thereof provided in the present application can effectively reduce the amount of metallic silver through the design of the "first brazing layer and the second brazing layer", and reduce the brazing temperature to below 900°C, thereby reducing the impact of high temperature on metal properties, and at the same time reducing material costs and process costs.

[0020] To further understand the features and technical contents of the present application, please refer to the following detailed description and drawings of the present application. However, the drawings provided are only for reference and illustration and are not intended to limit the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 This is a schematic diagram of an active metal brazing substrate material according to an embodiment of the present application.

[0022] Figure 2 It is a schematic diagram of a ceramic substrate having active metal layers on both sides of the surface.

[0023] FIG. 3A to FIG. 3D Schematic diagram of the manufacturing process of the substrate material according to the embodiment of the present application. DETAILED DESCRIPTION

[0024] The following is to illustrate the implementation methods disclosed in the present application through specific specific embodiments, and those skilled in the art can understand the advantages and effects of the present application from the contents disclosed in this specification. The present application can be implemented or applied through other different specific embodiments, and the details in this specification can also be based on different viewpoints and applications, and various modifications and changes can be made without deviating from the concept of the present application. In addition, the drawings of the present application are only simple schematic illustrations, not depictions based on actual dimensions, and are stated in advance. The following implementation methods will further explain the relevant technical contents of the present application in detail, but the disclosed contents are not intended to limit the scope of protection of the present application. It should be understood that although the terms "first", "second", "third" and the like may be used herein to describe various materials or parameters, these materials or parameters should not be limited by these terms. These terms are mainly used to distinguish one material from another material, or one parameter from another parameter.

[0025] Active Metal Brazing Substrate Materials

[0026] See also Figure 1 As shown, the embodiment of the present application provides an active metal brazing substrate material 100 containing aluminum elements, comprising a ceramic substrate layer 1, an active metal layer 2 and a conductive metal layer 3. The active metal layer 2 is disposed between the ceramic substrate layer 1 and the conductive metal layer 3 to connect the ceramic substrate layer 1 and the conductive metal layer 3 together.

[0027] More specifically, the active metal layer 2 includes a first brazing layer 21 and a second brazing layer 22. The first brazing layer 21 is disposed on one side surface of the ceramic substrate layer 1, the second brazing layer 22 is disposed on one side surface of the first brazing layer 21 away from the ceramic substrate layer 1, and the conductive metal layer 3 is disposed on one side surface of the second brazing layer 22 away from the first brazing layer 21.

[0028] It is worth mentioning that although the first brazing layer 21, the second brazing layer 22 and the conductive metal layer 3 are sequentially disposed on one side surface of the ceramic substrate layer 1 in this embodiment, the present application is not limited thereto. Figure 2 As shown, in another embodiment of the present application, another first brazing layer 21', another second brazing layer 22', and another conductive metal layer 3' may also be sequentially disposed on the other side surface of the ceramic substrate layer 1 to form a symmetrical substrate structure with active metal layers on both sides.

[0029] Ceramic substrate layer

[0030] Further, the ceramic substrate layer 1 may be, for example, at least one of a silicon nitride (SiN) ceramic substrate, a silicon carbide (SiC) ceramic substrate, an aluminum nitride (AlN) ceramic substrate, and an aluminum oxide (Al2O3) ceramic substrate. In the present embodiment, the ceramic substrate layer 1 is preferably a silicon nitride (SiN) ceramic substrate. In addition, the thickness T1 of the ceramic substrate layer 1 may be, for example, between 100 microns and 1000 microns, but the present application is not limited thereto.

[0031] First brazing layer

[0032] Please continue reading Figure 1 As shown, the first brazing layer 21 comprises a first metal composite material. The first metal composite material comprises: metal silver (Ag), metal copper (Cu), and a first active metal component.

[0033] It is worth mentioning that the composition of the first brazing layer 21 may further include a small amount of metal aluminum (Al), which may, for example, be first melted during the vacuum sintering process of preparing the active metal brazing substrate material and diffused from the second brazing layer 22 along the copper defects into the first brazing layer 21 .

[0034] Specifically, the first active metal component may be, for example, at least one selected from the group consisting of titanium (Ti), zirconium (Zr), tantalum (Ta), niobium (Nb), vanadium (V), hafnium (Hf), and hydrides of the above metals. Furthermore, the metal hydride may be, for example, at least one of titanium hydride (TiH2), zirconium hydride (ZrH2), tantalum hydride (TaH2), niobium hydride (NbH), vanadium hydride (VH2), and hafnium hydride (H2Hf2).

[0035] In some embodiments of the present application, the first active metal component is preferably at least one of titanium (Ti) and titanium hydride (TiH2). Accordingly, the first brazing layer 21 may also be referred to as a silver-copper-titanium brazing layer (Ag-Cu-Tipaste).

[0036] In terms of content range, the first metal composite material is the main component of the first brazing layer 21. For example, the weight percentage concentration of the first metal composite material in the first brazing layer 21 is at least not less than 80 wt%, and preferably not less than 90 wt%.

[0037] Specifically, in the first brazing layer 21, based on 100 parts by weight of the total weight of the first metal composite material, the content of the metal silver (Ag) is at least not less than 50 parts by weight, and preferably between 50 parts by weight and 75 parts by weight. In terms of thickness range, the thickness T21 of the first brazing layer 21 is at least not less than 5 micrometers, and preferably between 5 micrometers and 24 micrometers.

[0038] According to the above configuration, since the first brazing layer 21 in contact with the ceramic substrate layer 1 contains a certain content of silver (Ag) or more and has a thickness above a certain range, the bonding strength between the ceramic substrate layer 1 and the conductive metal layer 3 can be improved. If the silver (Ag) content in the first brazing layer 21 is too low or the thickness is too thin, the first brazing layer 21 will not allow the active metal brazing substrate material 100 to exert its proper physical properties. If the silver (Ag) content in the first brazing layer 21 is too high or the thickness is too thick, the material cost and manufacturing cost of the active metal brazing substrate material 100 will be too high.

[0039] It is worth mentioning that the first active metal component (such as Ti) in the first hard solder layer 21 can wet the surface of the ceramic substrate layer 1 during the vacuum sintering process and react with the ceramic material (such as SiN) to form compounds such as titanium nitride (TiN), titanium silicide (TiSi), or titanium disilicide (TiSi2), thereby enhancing the bonding strength between the active metal layer 2 and the ceramic substrate layer 1.

[0040] On the other hand, since the first brazing layer 21 contains active metal, the electrical impedance of the active metal brazing substrate material 100 can be made smaller.

[0041] Furthermore, the metal silver (Ag) and the metal copper (Cu) in the first brazing layer 21 may react to form a silver-copper alloy (Ag-Cu alloy).

[0042] Furthermore, the first metal composite material of the first brazing layer 21 can be formed by mixing and vacuum sintering Ag metal powder, Cu metal powder, Ti metal powder, and / or Ag-Cu alloy.

[0043] Second brazing layer

[0044] Please continue reading Figure 1 As shown, the second brazing layer 22 is composed of a second metal composite material. The second metal composite material includes: metal aluminum (Al), metal copper (Cu), and a second active metal component, and preferably only consists of metal aluminum, metal copper, and the second active metal component.

[0045] It is worth mentioning that, in a preferred embodiment of the present application, the second metal composite material of the second brazing layer 22 does not contain any metal silver (Ag).

[0046] Furthermore, as described above, the metal aluminum (Al) of the second brazing layer may be first melted during the vacuum sintering process of preparing the active metal brazing substrate material, and then diffused into the first brazing layer 21 at least partially along the defects of the metal copper (Cu), but the present application is not limited thereto.

[0047] Furthermore, similar to the first active metal component, the second active metal component can be, for example, at least one selected from the material group consisting of: titanium (Ti), zirconium (Zr), tantalum (Ta), niobium (Nb), vanadium (V), hafnium (Hf) and hydrides of the above metals.

[0048] Furthermore, the metal hydride may be, for example, at least one of titanium hydride (TiH2), zirconium hydride (ZrH2), tantalum hydride (TaH2), niobium hydride (NbH), vanadium hydride (VH2), and hafnium hydride (H2Hf2).

[0049] In some embodiments of the present application, the second active metal component is preferably titanium (Ti). Accordingly, the second brazing layer 22 may also be referred to as an aluminum-copper-titanium brazing layer (Al-Cu-Ti paste).

[0050] In terms of content range, the second metal composite material is the main component of the second brazing layer 22. For example, the weight percentage concentration of the second metal composite material in the second brazing layer 22 is at least not less than 80 wt%, and preferably not less than 90 wt%.

[0051] Specifically, in the second brazing layer 22, based on 100 parts by weight of the total weight of the second metal composite material, the content of the metal aluminum (Al) is at least not less than 40 parts by weight, and preferably between 40 parts by weight and 75 parts by weight. In terms of thickness range, the thickness T22 of the second brazing layer 22 is at least not less than 10 microns, and preferably between 10 microns and 24 microns.

[0052] It is worth mentioning that the metal aluminum (Al) and metal copper (Cu) in the second brazing layer 22 can react during the vacuum sintering process to form an aluminum-copper alloy (Al-Cu alloy). In addition, the second brazing layer 22 can react with the metal component (such as metal copper) of the conductive metal layer 3 at the interface to form a micron-level eutectic reaction (such as: aluminum and copper react with each other), so that the second brazing layer 22 can be tightly combined with the conductive metal layer 3.

[0053] Furthermore, the second metal composite material of the second brazing layer 22 can be, for example, formed by mixing and vacuum sintering aluminum metal powder (Almetal powder), copper metal powder (Cu metal powder), titanium metal powder (Ti metal powder), and / or aluminum-copper alloy (Al-Cu alloy). In addition, the second active metal component (such as Ti) in the second brazing layer 22 can diffuse to the ceramic substrate layer 1 through the first brazing layer 21 during the vacuum sintering process, and react with the ceramic material (such as SiN) to form a compound such as titanium nitride (TiN), titanium silicide (TiSi), or titanium disilicide (TiSi2), thereby enhancing the bonding strength between the active metal layer 2 and the ceramic substrate layer 1.

[0054] Active metal layer thickness ratio and metal content

[0055] From another perspective, the total thickness of the active metal layer 2 (i.e., the sum of the thickness T21 of the first brazing layer 21 and the thickness T22 of the second brazing layer 22) is at least not less than 12 micrometers, preferably at least not less than 15 micrometers, and particularly preferably between 15 micrometers and 32 micrometers. The content of each metal component in the active metal layer 2 is affected by the thickness ratio between the thickness T21 of the first brazing layer 21 and the thickness T22 of the second brazing layer 22. The thickness ratio between the thickness T21 of the first brazing layer 21 and the thickness T22 of the second brazing layer 22 is preferably 15% to 50%: 50% to 85% (and the total is 100%); particularly preferably 20% to 45%: 55% to 80%. Accordingly, based on the total weight of all metal components in the active metal layer 2 being 100wt%, the content of the metal aluminum (Al) is between 25wt% and 48wt%. The content of the metal silver (Ag) is not more than 50wt%, and preferably between 15wt% and 48wt%. The total content of the first and second active metal components (such as titanium metal) is between 0.3wt% and 8wt%, and preferably between 0.5wt% and 5wt%. The metal copper (Cu) is the remaining metal component. The addition of the metal silver (Ag) can be used as a stabilizer to improve the performance of the device.

[0056] According to the above configuration, the second brazing layer 22 is disposed between the first brazing layer 21 and the conductive metal layer 3. The second brazing layer 22 contains metal aluminum (Al) and does not contain metal silver (Ag). The second brazing layer 22 occupies a certain thickness, which can effectively reduce the content of metal silver in the active metal layer 2, so as to effectively reduce the material cost and manufacturing cost of the active metal brazing ceramic substrate, and can effectively improve the electromigration problem caused by the metal silver residue. Furthermore, the second brazing layer 22 can firmly connect the first brazing layer 21 and the conductive metal layer 3 together.

[0057] Furthermore, in some embodiments of the present application, the active metal layer 2 can be brazed at a brazing temperature not greater than 900°C due to the increase in aluminum content, and preferably between 820°C and 890°C. In a specific embodiment, the brazing temperature of the active metal layer 2 is 855°C, but is not limited thereto. Accordingly, since the active metal layer 2 has a lower brazing temperature than the prior art, the influence of high temperature on metal properties can be effectively improved.

[0058] Conductive metal layer

[0059] Please continue reading Figure 1 As shown, the conductive metal layer 3 is disposed on a side surface of the second brazing layer 22 away from the first brazing layer 21. The conductive metal layer 3 may be, for example, a metal copper foil, a metal aluminum foil, or a copper-aluminum alloy foil (Cu-Al alloy foil). In this embodiment, the conductive metal layer 3 is preferably a metal copper foil.

[0060] In addition, the thickness T3 of the conductive metal layer 3 may be, for example, between 50 micrometers and 800 micrometers, but the present application is not limited thereto.

[0061] It is worth mentioning that the conductive metal layer 3 (eg oxygen-free copper) can be brazed onto the ceramic substrate layer 1 through the active metal layer 2 by, for example, vacuum high-temperature sintering.

[0062] For example, the vacuum high temperature sintering process may include a first stage heat treatment process and a second stage heat treatment process, wherein the temperature condition of the first stage heat treatment process is not greater than 500° C., and the temperature condition of the second stage heat treatment process is not less than 800° C., and must be within a suitable brazing temperature range.

[0063] According to the above configuration, the active metal brazing substrate material containing aluminum element provided in the embodiment of the present application can effectively reduce the amount of metallic silver used and reduce the brazing temperature to below 900°C, thereby reducing the impact of high temperature on metal properties and at the same time reducing material cost and process cost.

[0064] It is worth mentioning that the "braze temperature" of the active metal layer 2 referred to in this article refers to the temperature that can make the metal component melt and have sufficient fluidity so as to wet the surface of the workpiece (such as a ceramic substrate). Generally speaking, the temperature of welding temperature higher than 450°C is called the braze temperature. The braze temperature can be, for example, determined by the desired braze temperature and the ternary metallographic diagram composed of three metal components to determine the appropriate weight percentage concentration of each of the metal materials. Alternatively, the ternary metallographic diagram composed of three metal components can be used to find the appropriate braze temperature range through the known weight percentage concentrations of the metal materials. For example, the appropriate braze temperature is a temperature higher than the liquidus phase temperature of the ternary metal component of the braze filler, which can allow the braze filler to have sufficient fluidity, but the present application is not limited to this.

[0065] Method for manufacturing active metal brazing substrate material

[0066] The above is a description of the structural characteristics and material characteristics of the active metal brazing substrate material, and the following will continue to describe the manufacturing method of the active metal brazing substrate material of the present application.

[0067] like Figures 3A to 3D As shown, the present embodiment also provides a method for manufacturing an active metal brazing substrate material, which includes step S110, step S120, step S130, and step S140. It must be noted that the order of each step and the actual operation method in this embodiment can be adjusted according to needs and are not limited to those in this embodiment.

[0068] like Figure 3A As shown, the step S110 is to provide a ceramic substrate layer 1. The ceramic substrate layer 1 can be, for example, at least one of a silicon nitride (SiN) ceramic substrate, a silicon carbide (SiC) ceramic substrate, an aluminum nitride (AlN) ceramic substrate, and an aluminum oxide (Al2O3) ceramic substrate. Preferably, in this embodiment, the ceramic substrate layer 1 is a silicon nitride (SiN) ceramic substrate.

[0069] like Figure 3B As shown, the step S120 is to implement a first hard solder layer preparation operation, which includes: applying a first active solder paste on one side surface of the ceramic substrate layer 1, and subjecting the first active solder paste to high temperature drying to remove most of the organic solvent in the first active solder paste to form a first hard solder layer 21.

[0070] The first active solder paste is prepared by mixing the first active solder powder and organic components (such as a paste, an organic solvent and a thixotropic agent), and is adjusted to a suitable viscosity (such as 50 to 300 mPa·s) so that the solder paste can be easily coated on the ceramic substrate layer 1.

[0071] For example, the first active solder paste can be coated on the surface of the ceramic substrate by screen printing and dried at a temperature of 90° C. to 110° C. for 5 to 15 minutes to volatilize most of the organic solvent in the first active solder paste, thereby forming the first hard solder layer 21.

[0072] In some embodiments of the present application, a weight ratio between the first active solder powder and the organic component may be, for example, between 70% to 95%: 5% to 30%, and preferably between 75% to 90%: 10% to 25%.

[0073] The first active solder powder (forming the first metal composite material) is a powder formed by mixing metal silver powder (Ag metal powder), metal copper powder (Cu metal powder), and a first active metal powder (such as metal titanium powder). The weight ratio of silver (Ag): copper (Cu): first active metal powder (Ti, TiH2) can be, for example, between 50-75:20-48:2-5, and in a specific embodiment is 68:28:4, but the present application is not limited thereto.

[0074] In the organic component, the weight ratio of the paste-forming agent: the organic solvent: the thixotropic agent may be, for example, between 20% to 30%: 50% to 70%: 1% to 5%.

[0075] The paste-forming agent may be selected from at least one of the material group consisting of silicone oil, white oil, polyvinyl alcohol, acrylic resin, nitrocellulose, ethyl cellulose, dimethyl phthalate, and carboxymethyl cellulose. Preferably, the paste-forming agent is ethyl cellulose. The organic solvent may be selected from at least one of the material group consisting of ethylene glycol butyl ether acetate, diethylene glycol, triethanolamine, butyl cellosolve, tert-butyl alcohol, N,N-dimethylformamide, pinene alcohol, and nonylphenol polyglycol ether. Preferably, the organic solvent is pinene alcohol or ethylene glycol butyl ether acetate. The thixotropic agent may be selected from at least one of the material group consisting of polyamide wax, hydrogenated castor oil, and polyurea. Preferably, the thixotropic agent is polyamide wax.

[0076] However, the present application is not limited to the above-mentioned implementation mode. As long as the active solder powder and the organic component can be formulated into an active solder paste with a viscosity suitable for coating on the ceramic substrate to facilitate the formation of a hard solder layer, it complies with the protection spirit of the present application and falls within the protection scope of the present application.

[0077] like Figure 3CAs shown, the step S130 is to implement a second hard solder layer preparation operation, which includes: applying a second active solder paste on the surface of the first hard solder layer 21 away from the ceramic substrate layer 1, and drying the second active solder paste at a high temperature to remove most of the organic solvent in the second active solder paste, thereby forming a second hard solder layer 22.

[0078] The second active solder paste is prepared by mixing the second active solder powder and the organic component to a suitable viscosity (eg, 50-300 mPa·s) so as to be coated on the first brazing layer 21 .

[0079] For example, the second active solder paste can be coated on the first brazing layer 21 by screen printing and dried at a temperature of 90°C to 110°C for 5 minutes to 15 minutes to volatilize most of the organic solvent in the second active solder paste, thereby forming the second brazing layer 22.

[0080] In some embodiments of the present application, a weight ratio between the second active solder powder and the organic component may be, for example, between 70% to 95%: 5% to 30%, and preferably between 75% to 90%: 10% to 25%.

[0081] The second active solder powder (forming the above-mentioned second metal composite material) is a powder formed by mixing metal aluminum powder (Al metal powder), metal copper powder (Cu metal powder), and a second active metal powder (such as metal titanium powder). Among them, the weight ratio of aluminum (Al): copper (Cu): second active metal powder (Ti, TiH2) can be, for example, between 45-75: 20-50: 0.5-5. For example, in some specific embodiments, the weight ratio of Al: Cu: Ti can be, for example, [48: 47: 5], [50: 49: 0.5], [72: 23: 5], [72: 24: 4], but the present application is not limited thereto.

[0082] It is worth mentioning that the second active solder powder does not contain metallic silver powder.

[0083] The ratio and material types of the organic components in the second active solder paste are similar to those of the organic components in the first active solder paste, and are not described in detail here.

[0084] like Figure 3DAs shown, the step S140 is to implement a conductive metal layer preparation operation, which includes: disposing a conductive metal layer 3 on a side surface of the second brazing layer 22 away from the first brazing layer 21, and brazing the conductive metal layer 3 on the ceramic substrate layer 1 through an active metal layer 2 composed of the first brazing layer 21 and the second brazing layer 22 under a vacuum high temperature sintering process. The conductive metal layer 3 can be, for example, a metal copper foil, a metal aluminum foil or a copper-aluminum alloy foil.

[0085] The vacuum high temperature sintering process may include, for example, a first stage heat treatment process and a second stage heat treatment process, wherein the temperature condition of the first stage heat treatment process is not greater than 500°C, and the temperature condition of the second stage heat treatment process is not less than 800°C.

[0086] More specifically, the temperature condition of the first stage heat treatment program is between 300°C and 500°C, and the treatment time is between 30 minutes and 240 minutes. The temperature condition of the second stage heat treatment program is between 800°C and 915°C (need to be within the appropriate brazing temperature range), and the treatment time is between 30 minutes and 240 minutes. In addition, the heating rate of the above heat treatment program can be, for example, 5 to 30°C / min. The cooling rate after the vacuum high temperature sintering can be, for example, 2 to 30°C / min.

[0087] It is worth mentioning that during the vacuum sintering process, the organic components in the first and second brazing layers will at least partially vaporize, and the first and second active metal components (such as Ti) can wet the surface of the ceramic substrate layer 1 and react with the ceramic material (such as SiN) to form compounds such as titanium nitride (TiN), titanium silicide (TiSi), or titanium disilicide (TiSi2) to enhance the bonding strength between the active metal layer 2 and the ceramic substrate layer 1. In addition, the second brazing layer 22 can react with the metal components of the conductive metal layer 3 (such as copper) at the interface at the micron level (such as aluminum and copper reacting eutectic) to form a strong eutectic structure, so that the active metal layer 2 can be tightly bonded to the conductive metal layer 3.

[0088] It is worth mentioning that the total thickness of the active metal layer 2 (i.e., the sum of the thickness T21 of the first brazing layer 21 and the thickness T22 of the second brazing layer 22) is at least not less than 12 microns, and preferably between 15 microns and 32 microns. Furthermore, a thickness ratio of the thickness T21 of the first brazing layer 21 to the thickness T22 of the second brazing layer 22 is between 15% and 50%: 50% and 85% (and the total is 100%).

[0089] In addition, based on the total weight of all metal components in the active metal layer 2 being 100wt%, the content of the metal aluminum (Al) is between 25wt% and 48wt%. The content of the metal silver (Ag) is not more than 50wt%, and is preferably between 15wt% and 48wt%. The total content of the first and second active metal components (such as titanium metal) is between 0.3wt% and 8wt%, and is preferably between 0.5wt% and 5wt%. The metal copper (Cu) is the remaining metal component.

[0090] Accordingly, the technical solution provided in the embodiment of the present application can reduce the amount of metallic silver used and reduce the brazing temperature to below 900°C, thereby reducing the impact of high temperature on metal properties and effectively reducing material costs and process costs.

[0091] Experimental data and test results

[0092] The contents of the present application are described in detail below with reference to Examples 1 to 4 and Comparative Examples 1 to 3. The Examples are experimental groups that can prove the technical effects of the present application, while the Comparative Examples are groups with poorer conditions. However, the following Examples are only used to help understand the present application, but the present application is not limited thereto.

[0093] Example 1: According to the conditions of Table 1, an active metal brazing substrate material including a first brazing layer and a second brazing layer is prepared. The preparation method comprises: applying a first active solder paste containing 68 parts by weight of silver powder (Ag), 28 parts by weight of copper powder (Cu), and 4 parts by weight of titanium powder (Ti) on the surface of a ceramic substrate, and drying at high temperature to form the first brazing layer. Then, applying a second active solder paste containing 48 parts by weight of aluminum powder (Al), 47 parts by weight of copper powder (Cu), and 5 parts by weight of titanium powder (Ti) on the first brazing layer, and drying at high temperature to form the second brazing layer. Then, a metal copper foil is further disposed on the second brazing layer to form a laminated material, and then the laminated material is subjected to vacuum high-temperature sintering to finally form the active metal brazing substrate material.

[0094] In Example 1, the temperature condition of the first stage heat treatment program in vacuum high temperature sintering is 450°C, and the treatment time is 30 minutes. The temperature condition of the second stage heat treatment program is 855°C, and the treatment time is 60 minutes. Furthermore, the ceramic substrate is a silicon nitride (SiN) ceramic substrate with a thickness of 304 microns. The thickness of the first brazing layer is 6 microns, the thickness of the second brazing layer is 12 microns, and the thickness of the metal copper foil is 500 microns. Among them, the brazing temperature at which the brazing material is heated is 855°C.

[0095] The preparation methods of Examples 2-3 and Comparative Examples 1-3 are substantially the same as that of Example 1, except for the weight ratio and type of metal components, the thickness of the brazing layer, and the brazing temperature.

[0096] Then, the active metal brazing substrate material prepared in the above-mentioned embodiments and comparative examples was subjected to a peel strength test, which is to test the bonding strength of the brazing layer between the metal copper foil and the ceramic substrate. The method is measured according to JIS-C-6481, and the measuring temperature is 25°C. If the peel strength test result is >100N / cm, the bonding strength is evaluated as good. If the peel strength test result falls within the range of 50 to 100N / cm, the bonding strength is evaluated as normal. In addition, if the peel strength test result is <50N / cm, the bonding strength is evaluated as poor.

[0097] Table 1

[0098]

[0099]

[0100] Test Results and Discussion

[0101] From the test results in Table 1, it can be seen that the metal composition of the first brazing layer of Examples 1 to 4 is Ag-Cu-Ti (or TiH 2) , and their weight ratios all fall within the range of 50-75:20-48:2-5. The metal components of the second brazing layer are Al-Cu-Ti, and their weight ratios all fall within the range of 45-75:20-50:0.5-5. Furthermore, the thickness of the first brazing layer is not less than 6 microns. The test results of the peel strength of the active metal brazing substrate materials of Examples 1 and 4 all fall within the range of 50-100 N / cm, so their bonding strengths are all evaluated as normal. In addition, the test results of the peel strength of the active metal brazing substrate materials of Examples 2 and 3 are all greater than 100 N / cm, so their bonding strengths are all evaluated as good.

[0102] The metal components used in the first brazing layer and the second brazing layer of Comparative Example 1 are both Al-Cu-Ti, and Ag-Cu-Ti is not used. The Al content in the second brazing layer of Comparative Example 2 is 23%, which is lower than the ideal 40%. The total thickness of the first brazing layer and the second brazing layer of Comparative Example 3 is 12 microns. The peel strength test results of the active metal brazing substrate materials of Comparative Examples 1 to 3 are all less than 50N / cm, so their bonding strength is evaluated as poor.

[0103] Advantageous Effects of Embodiments

[0104] The beneficial effect of the present application is that the active metal brazing substrate material containing aluminum elements and the manufacturing method thereof provided by the present application can effectively reduce the amount of metal silver through the design of "first brazing layer and second brazing layer", and reduce the brazing temperature to below 900°C, thereby reducing the influence of high temperature on metal properties, and at the same time reducing material cost and process cost. More specifically, the second brazing layer of the present application is arranged between the first brazing layer and the conductive metal layer. The second brazing layer contains metal aluminum (Al) and does not contain metal silver (Ag). The second brazing layer has a certain thickness, which can reduce the content of metal silver in the active metal layer, so as to effectively reduce the material cost and manufacturing cost of the active metal brazing ceramic substrate, and can effectively improve the electromigration problem caused by silver residue. Finally, the active metal brazing (AMB) substrate material provided in the embodiment of the present application can further etch a circuit pattern on the ceramic substrate by exposure and development, and can be applied to high-power modules, electric vehicles and charging systems for energy conversion.

[0105] The contents disclosed above are only preferred feasible embodiments of the present application, and are not intended to limit the scope of the present patent application. Therefore, all equivalent technical changes made using the description and drawings of the present application are included in the scope of the present patent application.

Claims

1. An active metal brazing substrate material containing aluminum element, characterized in that: The active metal brazing substrate material comprises: a ceramic substrate layer; An active metal layer comprising: a first brazing layer disposed on one side surface of the ceramic substrate layer; wherein the first brazing layer comprises a first metal composite material comprising metal silver (Ag), metal copper (Cu) and a first active metal component; based on 100 parts by weight of the total weight of the first metal composite material, the content of the metal silver is not less than 50 parts by weight; and a second brazing layer disposed on a surface of the first brazing layer away from the ceramic substrate layer; wherein the second brazing layer comprises a second metal composite material comprising metal aluminum (Al), metal copper (Cu), and a second active metal component; based on 100 parts by weight of the total weight of the second metal composite material, the content of the metal aluminum is not less than 40 parts by weight, and the second metal composite material does not contain metal silver; wherein the sum of the thickness of the first brazing layer and the second brazing layer is at least not less than 12 micrometers, and the thickness of the first brazing layer is at least not less than 5 micrometers; and A conductive metal layer is disposed on a surface of the second brazing layer that is away from the first brazing layer.

2. The active metal brazing substrate material according to claim 1, characterized in that: Based on the total weight of all metal components in the active metal layer being 100wt%, the content of the metal aluminum is between 25wt% and 48wt%, the content of the metal silver is not more than 50wt%, the total content of the first active metal component and the second active metal component is between 0.3wt% and 8wt%, and the metal copper (Cu) is the remaining metal component.

3. The active metal brazing substrate material according to claim 1, characterized in that: In the active metal layer, a thickness ratio between the thickness of the first brazing layer and the thickness of the second brazing layer is between 15% and 50% and 50% and 85%.

4. The active metal brazing substrate material according to claim 1, characterized in that: The first active metal component and the second active metal component are respectively selected from at least one of the material group consisting of titanium (Ti), zirconium (Zr), tantalum (Ta), niobium (Nb), vanadium (V), hafnium (Hf), and hydrides of the above metals.

5. The active metal brazing substrate material according to claim 1, characterized in that: The ceramic substrate layer is at least one of a silicon nitride ceramic substrate, a silicon carbide ceramic substrate, an aluminum nitride ceramic substrate and an aluminum oxide ceramic substrate; and the conductive metal layer is at least one of a metal copper foil, a metal aluminum foil and a copper-aluminum alloy foil.

6. The active metal brazing substrate material according to claim 1, characterized in that: The active metal layer needs to be heated to a brazing temperature of no more than 900° C., and the ceramic substrate layer and the conductive metal layer have a peel strength of no less than 50 N / cm through welding of the active metal layer.

7. The active metal brazing substrate material according to any one of claims 1 to 6, characterized in that: During vacuum and high-temperature sintering, the first active metal component in the first brazing layer can wet the side surface of the ceramic substrate layer and react with the ceramic material of the ceramic substrate layer to enhance the bonding strength between the active metal layer and the ceramic substrate layer; the second brazing layer can react with the metal component of the conductive metal layer at the interface at the micrometer level to form a strong eutectic structure, thereby enabling the active metal layer to be tightly bonded to the conductive metal layer.

8. A method for manufacturing an active metal brazing substrate material, characterized in that: The manufacturing method comprises: performing a first brazing layer preparation operation, including: coating a first active solder paste on a side surface of a ceramic substrate layer, and drying the first brazing layer; wherein the first active solder paste comprises a first active solder powder, which is composed of a metal silver powder, a metal copper powder, and a first active metal powder; wherein based on 100 parts by weight of the first active solder powder, the content of the metal silver powder is not less than 50 parts by weight; Implementing a second brazing layer preparation operation, comprising: coating a second active solder paste on a surface of the first brazing layer away from the ceramic substrate layer, and drying the coating to form a second brazing layer; wherein the second active solder paste comprises a second active solder powder, which is composed of a metal aluminum powder, a metal copper powder, and a second active metal powder; wherein the content of the metal aluminum powder is not less than 40 parts by weight based on 100 parts by weight of the second active solder powder; wherein the second active solder powder does not contain a metal silver powder; and Implementing a conductive metal layer preparation operation, which includes: disposing a conductive metal layer on a surface of the second brazing layer away from the first brazing layer, and brazing the conductive metal layer on the ceramic substrate layer through an active metal layer composed of the first brazing layer and the second brazing layer under a vacuum high-temperature sintering process; The total thickness of the first brazing layer and the second brazing layer is at least not less than 12 micrometers, and the thickness of the first brazing layer is not less than 5 micrometers.

9. The method for manufacturing an active metal brazing substrate material according to claim 8, characterized in that: The weight ratio of the metal silver powder in the first active solder powder; the metal copper powder: the first active metal powder is between 50-75:20-48:2-5; the weight ratio of the metal aluminum powder in the second active solder powder; the metal copper powder: the second active metal powder is between 45-75:20-50:0.5-5.

10. The method for manufacturing an active metal brazing substrate material according to claim 8, characterized in that: The vacuum high temperature sintering treatment process includes: a first stage heat treatment process with a temperature condition not greater than 500°C and a second stage heat treatment process with a temperature condition not less than 800°C.

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