Up-casting crystallizer with anti-oxidation device

By adopting a concentric round sleeve structure and a nitrogen jet system in the upper lead crystallizer, the problem of oxidation reaction in traditional crystallization is solved, and a higher quality metal production is achieved, ensuring the stability and purity of the crystallization process.

CN119319225AActive Publication Date: 2025-01-17CHINA COPPER (KUNMING) COPPER INDUSTRY CO LTD
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Patent Information

Application Number
CN202411605007.6
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-11-12
Publication Date
2025-01-17
Estimated Expiration
2044-11-12

AI Technical Summary

Technical Problem

Traditionally, during the crystallization process, the contact between metal liquid and oxygen leads to an oxidation reaction, affecting the purity and strength of metal materials. Existing anti-oxidation methods such as protecting gas atmosphere are difficult to completely isolate oxygen, and water-cooling methods may introduce impurities and increase the risk of oxidation during the rainy season. .

Method used

A top lead crystallizer with anti-oxidation device is designed, using a concentric round sleeve structure with a temperature insulation outer layer and inner layer, with a built-in nitrogen jet nozzle and a communication pipe, and a graphite guide sealing sleeve and a shrinking arc sheet to form a double The layer sealing structure ensures that low-temperature nitrogen fills the inner layer and avoids contact of oxygen.

Benefits of technology

Effectively prevent metal oxidation, improve the purity and quality of crystalline products, reduce external interference, improve process stability and repeatability, and avoid production interruptions and failures caused by oxidation.

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Abstract

The invention relates to the technical field of metal production, and discloses an up-drawing crystallizer with an anti-oxidation device, which comprises a crystallizer socket used for being butted with an up-drawing movable position of an up-drawing crystallization copper wire blank, the crystallizer socket is positioned in a crystallization bin, and a thermal insulation outer layer is arranged at the upper end of the crystallization bin. According to the up-drawing crystallizer with the anti-oxidation device, a first graphite guide sealing sleeve and a second graphite guide sealing sleeve are arranged in holes in the upper end and the lower end of a thermal insulation inner layer, and a first shrinkage inner plate arranged in the first graphite guide sealing sleeve is used for reducing leakage of nitrogen due to excessive nitrogen; the contraction arc piece and the movable arc piece which are arranged in the second graphite guide sealing sleeve further limit the upward guiding process of the copper wire blank, nitrogen is prevented from moving and leaking along with the copper wire blank, oxidation of metal in the crystallization process is effectively prevented through the arrangement of the first graphite guide sealing sleeve and the second graphite guide sealing sleeve, generation of oxidation impurities is reduced, and the service life of the copper wire blank is prolonged. Therefore, the purity and quality of a crystallized product are improved.
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Description

Technical Field

[0001] The invention relates to the technical field of metal production, in particular to an upward crystallizer with an anti-oxidation device. Background Art

[0002] In the processing and production of metal materials, the upward crystallization technology is widely used. The upward crystallizer is a commonly used crystallization technology. Through a certain upward technique, the crystal growth of the material in the liquid phase is realized, so as to obtain the desired crystal product. As a key equipment, the performance of the upward crystallizer directly affects the quality and production efficiency of the metal material. As one of the important means to obtain high-quality metal products, the upward crystallizer is in contact with the oxygen in the surrounding environment in the traditional upward crystallization process. It is very easy to cause oxidation reaction, resulting in metal oxidation, thereby affecting the performance and quality of the metal material. The oxidation phenomenon will not only reduce the purity and strength of the metal material, but also may cause surface defects and uneven internal structure. At present, the common method of preventing metal oxidation includes adding deoxidizers during the smelting process. There are still some defects in the use of this method, such as:

[0003] In the existing anti-oxidation devices, vacuum melting technology is used or a protective gas atmosphere is set around the crystallizer to achieve anti-oxidation treatment. Since it is difficult to achieve complete isolation of gas flow, there is still residual oxygen that leads to oxidation problems. In terms of cooling the materials, the commonly used water cooling method may lead to inaccurate temperature control, affecting the crystallization effect and quality. Impurities may be introduced during the water cooling process, further affecting the purity of the metal. During the rainy season, the air humidity increases, and the surface of the copper wire billet produced by the upward process is easily oxidized to form red-purple and black oxide plates, which reduces customer satisfaction and affects the use of the copper wire billet in subsequent processes. At the same time, there are certain quality risks.

[0004] In view of the above problems, it is urgent to carry out innovative design based on the original copper wire billet production. Summary of the invention

[0005] The purpose of the present invention is to provide an upward crystallizer with an anti-oxidation device to solve the problem that it is difficult to achieve complete isolation by using a protective gas atmosphere to achieve anti-oxidation treatment in the above-mentioned background technology, and there is still residual oxygen leading to oxidation problems, and impurities may be introduced during the water cooling process, further affecting the purity of the metal, and during the rainy season, the air humidity increases, and the surface of the copper wire billet produced by the upward process is easily oxidized to form red-purple and black oxide plates, which poses certain quality risks.

[0006] To achieve the above object, the present invention provides the following technical solution: an upward crystallizer with an anti-oxidation device, comprising a crystallizer socket, which is used to dock with the upward active position of the upward crystallization copper wire billet, and the crystallizer socket is located inside the crystallization silo, the upper end of the crystallization silo is provided with a thermal insulation outer layer, and the thermal insulation outer layer is provided inside the thermal insulation inner layer, and the crystallizer socket, the crystallization silo and the thermal insulation outer layer are assembled to form the main structure of the upward crystallizer;

[0007] Material pipes are equidistantly arranged on the side wall of the crystallization silo, and a positioning plate is installed on the upper end of the crystallization silo, support frames are equidistantly arranged on the upper end of the positioning plate, and the inner wall of the support frame is against the outer wall of the thermal insulation outer layer, a positioning bottom plate is installed at the bottom end of the thermal insulation outer layer, and a positioning top plate is installed at the top end of the thermal insulation outer layer, the thermal insulation outer layer and the thermal insulation inner layer are concentrically arranged, and an anti-oxidation component is arranged inside the thermal insulation inner layer to prevent oxidation caused by excessive contact of the wire billet entering the thermal insulation inner layer with oxygen;

[0008] A graphite guide sealing sleeve 1 is arranged in the circular hole at the bottom end of the thermal insulation inner layer, a shrinking inner plate 1 is arranged on the inner wall surface of the graphite guide sealing sleeve 1, and the shrinking inner plate 1 is arranged as a trumpet-shaped plate structure, the graphite guide sealing sleeve 1 is aligned with the center line of the circular hole at the bottom end of the thermal insulation inner layer, and the top end of the thermal insulation inner layer is connected to the bottom end of the exhaust pipe, and the top end of the exhaust pipe passes through the positioning top plate;

[0009] A guide tube is installed and docked with the circular hole at the upper end of the positioning top plate, the center line of the guide tube is aligned with the center line of the circular hole of the positioning top plate, and a partition cover is provided on the outside of the guide tube, a positioning frame is provided at the upper end of the positioning top plate, and the upper end of the positioning frame is penetrated by the bottom end of the partition cover, and the internal cross-section of the partition cover and the positioning frame forms an S-shaped flow channel.

[0010] The above technical solution is adopted to provide an oxygen-free environment for the copper wire billet during the production process, thereby avoiding oxidation during the production process of the copper wire billet.

[0011] Preferably, the center line of the crystallizer socket is aligned with the center line of the crystallization silo, and the top of the crystallization silo is snap-connected with the positioning plate.

[0012] The adoption of the technical solution makes it easier for the crystallizer socket to guide the upward crystallization activity of the copper wire billet.

[0013] Preferably, the positioning plate is penetrated by the thermal insulation outer layer and the positioning bottom plate, and the inner wall surface of the positioning plate is butted against the outer wall surface of the thermal insulation outer layer.

[0014] By adopting the above technical solution, the positioning plate is matched with the thermal insulation outer layer to maintain stability and limit the installation.

[0015] Preferably, the anti-oxidation component comprises:

[0016] Nitrogen gas jet nozzles are arranged in three layers at equal intervals through the thermal insulation inner layer, and the nitrogen gas jet nozzles are arranged in an inclined manner;

[0017] A connecting ring, which is arranged in three layers at equal distances between the temperature-insulating outer layer and the temperature-insulating inner layer, and the connecting ring is connected to the nitrogen gas jet nozzle;

[0018] An injection pipe connected to one side of the communication ring of the bottom layer;

[0019] A connecting pipe connected between the connecting rings, and arranged inside the thermal insulation outer layer and the thermal insulation inner layer;

[0020] A second graphite guide sealing sleeve is arranged in the top opening of the thermal insulation outer layer, and the second graphite guide sealing sleeve is arranged in a T-shaped sleeve structure;

[0021] The second shrink inner plate has its bottom end butted against the inner wall surface of the second graphite guide sealing sleeve;

[0022] The contraction arc piece is arranged at the bottom end of the inner wall surface of the second upper end of the contraction inner plate, and the contraction arc piece is arranged in an inclined shape;

[0023] The movable arc piece is rotatably connected to the side wall surface of the contraction arc piece.

[0024] By adopting the above technical solution, the anti-oxidation component has a temperature-insulating inner layer filled with nitrogen to prevent oxygen from oxidizing the copper wire billet.

[0025] Preferably, a check valve is provided inside the nitrogen gas nozzle, and the nitrogen gas nozzle is a pipeline structure made of low-temperature resistant metal material.

[0026] By adopting the above technical solution, the check valve provided through the nitrogen gas injection nozzle prevents the nitrogen from flowing back into the nozzle.

[0027] Preferably, the connecting ring and the connecting pipe are arranged in a vertical direction, and the connecting pipe connects three layers of connecting rings.

[0028] By adopting the above technical solution, as the connecting ring and the connecting pipe are arranged in a three-dimensional vertical direction, it is convenient to fill the nitrogen into the thermal insulation inner layer.

[0029] Preferably, the connecting ring and the connecting pipe are both located between the thermal insulation outer layer and the thermal insulation inner layer, and the injection pipe connected to one side of the connecting ring at the bottom layer passes through the thermal insulation outer layer.

[0030] By adopting the above technical solution, as the connecting ring and the connecting pipe are connected, it is convenient for nitrogen to flow to the outside and be discharged.

[0031] Preferably, a one-way valve is provided inside the injection pipe, and the injection pipe and the connecting pipe are symmetrically arranged.

[0032] By adopting the above technical solution, the one-way valve arranged inside the injection pipe prevents nitrogen from flowing back and overflowing outward.

[0033] Preferably, the second top end of the shrink inner plate is aligned with the second top end of the graphite guide sealing sleeve, and the second graphite guide sealing sleeve penetrates the top end of the positioning top plate.

[0034] By adopting the above technical solution, two graphite guide sealing sleeves and two shrinkage inner plates are installed to reduce nitrogen leakage.

[0035] Preferably, the contraction arc piece and the movable arc piece are in an annular structure, and the movable arc piece and the contraction arc piece.

[0036] By adopting the above technical solution, a ring structure is formed by the contraction arc piece and the movable arc piece, which is used to gather the copper wire billet out of the environment and avoid nitrogen overflow.

[0037] Compared with the prior art, the present invention has the following beneficial effects: the upper crystallizer with an anti-oxidation device:

[0038] 1. When in use, a graphite guide sealing sleeve 1 and a graphite guide sealing sleeve 2 are installed in the holes at the upper and lower ends of the thermal insulation inner layer. The shrinkage inner plate 1 arranged inside the graphite guide sealing sleeve 1 is used to reduce excessive leakage of nitrogen. The shrinkage arc sheet and the movable arc sheet arranged inside the graphite guide sealing sleeve 2 further limit the leakage of nitrogen as the copper wire billet moves during the upward drawing process. As the movable arc sheet moves and turns to fit the movement of the copper wire billet, the graphite guide sealing sleeve 1 and the graphite guide sealing sleeve 2 are set to effectively prevent the oxidation of the metal during the crystallization process, reduce the generation of oxidized impurities, thereby improving the purity and quality of the crystallized product, so that it has more excellent physical and chemical properties. The anti-oxidation component can ensure that the crystallization process is carried out in a relatively stable environment, reduce the interference of external factors on crystallization, and improve the stability and repeatability of the process.

[0039] 2. The nitrogen gas nozzle, connecting ring, injection pipe and connecting pipe passing through the anti-oxidation component form a three-dimensional nitrogen pipeline structure. The one-way valve installed inside the nitrogen gas nozzle and the injection pipe can effectively prevent backflow leakage. With the setting of the injection pipe, it is convenient for low-temperature nitrogen to be quickly filled into the connecting ring and the connecting pipe. Since the connecting ring and the connecting pipe are located between the insulation outer layer and the insulation inner layer, the internal copper wire billet is cooled. Since the specific gravity of nitrogen is lighter than that of air, all the humid air in the cooling chamber can be discharged to form a nitrogen isolation protection range to prevent the wire billet from high-temperature oxidation to form plates. The stable crystallization process reduces production interruptions and failures caused by oxidation, which helps to achieve continuous and efficient production. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1 It is a schematic diagram of the overall external three-dimensional structure of the present invention;

[0041] Figure 2 It is a schematic diagram of the overall internal side-section stereoscopic structure of the present invention;

[0042] Figure 3 It is a schematic diagram of the overall internal three-dimensional structure of the present invention;

[0043] Figure 4 This is a schematic diagram of the three-dimensional structure of the thermal insulation inner layer and the thermal insulation outer layer separated from each other in the present invention;

[0044] Figure 5 It is a schematic diagram of the side-section stereoscopic structure of the thermal insulation outer layer and the thermal insulation inner layer of the present invention;

[0045] Figure 6 This is a schematic diagram of the three-dimensional structure of the support frame and the positioning frame installed in the present invention;

[0046] Figure 7 It is a schematic diagram of the three-dimensional structure of the thermal insulation inner layer and the second graphite guide sealing sleeve of the present invention;

[0047] Figure 8 This is a schematic diagram of the three-dimensional structure of the support frame and the thermal insulation inner layer separated according to the present invention;

[0048] Fig. 9 This is a schematic diagram of the three-dimensional structure of the positioning plate and the connecting ring installed in the present invention;

[0049] Fig.10 It is a schematic diagram of the split three-dimensional structure of the second graphite guide sealing sleeve and the second shrink inner plate of the present invention.

[0050] In the figure: 1. crystallizer socket; 2. crystallization silo; 3. material pipe; 4. positioning plate; 5. support frame; 6. thermal insulation outer layer; 7. positioning bottom plate; 8. thermal insulation inner layer; 9. graphite guide sealing sleeve one; 10. shrink inner plate one; 11. nitrogen jet nozzle; 12. connecting ring; 13. injection pipe; 14. connecting pipe; 15. positioning top plate; 16. graphite guide sealing sleeve two; 17. shrink inner plate two; 18. shrink arc sheet; 19. movable arc sheet; 20. guide pipe; 21. partition cover; 22. positioning frame; 23. exhaust pipe. DETAILED DESCRIPTION

[0051] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0052] See also Figure 1-10The present invention provides a technical solution: an upward crystallizer with an anti-oxidation device, comprising a crystallizer socket 1, a crystallization silo 2, a material pipe 3, a positioning plate 4, a support frame 5, a temperature-insulating outer layer 6, a positioning bottom plate 7, a temperature-insulating inner layer 8, a graphite guide sealing sleeve 9, a shrinking inner plate 10, a nitrogen gas jet nozzle 11, a connecting ring 12, an injection pipe 13, a connecting pipe 14, a positioning top plate 15, a graphite guide sealing sleeve 16, a shrinking inner plate 17, a shrinking arc sheet 18, a movable arc sheet 19, a guide pipe 20, a partition cover 21, a positioning frame 22 and an exhaust pipe 23;

[0053] Among them, the crystallizer socket 1 is used to connect the upper active position of the upper crystallization copper wire billet, and the crystallizer socket 1 is located inside the crystallization silo 2, the upper end of the crystallization silo 2 is provided with an insulation outer layer 6, and the insulation outer layer 6 is provided with an insulation inner layer 8, and the crystallizer socket 1, the crystallization silo 2 and the insulation outer layer 6 are assembled to form the main structure of the upper crystallizer;

[0054] The center line of the crystallizer socket 1 is aligned with the center line of the crystallization silo 2, and the top of the crystallization silo 2 is connected with the positioning plate 4 by snapping, the positioning plate 4 is penetrated by the thermal insulation outer layer 6 and the positioning bottom plate 7, and the inner wall surface of the positioning plate 4 is connected with the outer wall surface of the thermal insulation outer layer 6;

[0055] Material pipes 3 are equidistantly arranged on the side wall of the crystallization silo 2, and a positioning plate 4 is installed on the upper end of the crystallization silo 2, a support frame 5 is equidistantly arranged on the upper end of the positioning plate 4, and the inner wall surface of the support frame 5 is against the outer wall surface of the thermal insulation outer layer 6, a positioning bottom plate 7 is installed at the bottom end of the thermal insulation outer layer 6, and a positioning top plate 15 is installed at the top of the thermal insulation outer layer 6, the thermal insulation outer layer 6 and the thermal insulation inner layer 8 are concentrically arranged, and an anti-oxidation component is arranged inside the thermal insulation inner layer 8 to prevent oxidation caused by excessive contact of the wire billet entering the thermal insulation inner layer 8 with oxygen;

[0056] A graphite guide sealing sleeve 9 is arranged in the circular hole at the bottom end of the thermal insulation inner layer 8, a shrinking inner plate 10 is arranged on the inner wall surface of the graphite guide sealing sleeve 9, and the shrinking inner plate 10 is arranged as a trumpet-shaped plate structure, the graphite guide sealing sleeve 9 is aligned with the center line of the circular hole at the bottom end of the thermal insulation inner layer 8, and the top end of the thermal insulation inner layer 8 is connected to the bottom end of the exhaust pipe 23, and the top end of the exhaust pipe 23 passes through the positioning top plate 15;

[0057] The guide tube 20 is installed in the circular hole at the upper end of the positioning top plate 15, the center line of the guide tube 20 is aligned with the center line of the circular hole of the positioning top plate 15, and the outer cover of the guide tube 20 is provided with a partition cover 21, the upper end of the positioning top plate 15 is provided with a positioning frame 22, and the upper end of the positioning frame 22 is penetrated by the bottom end of the partition cover 21, and the internal cross section of the partition cover 21 and the positioning frame 22 forms an S-shaped flow channel;

[0058] In conjunction with the accompanying drawings Figure 1-10As shown, the crystallizer socket 1 is installed at the bottom of the positioning bottom plate 7, and as the positioning bottom plate 7 is installed at the bottom of the insulation outer layer 6, the insulation outer layer 6 and the positioning bottom plate 7 provide a limit for the installation of the insulation inner layer 8, so that the crystallizer socket 1 is docked with the crystallization silo 2, as shown in FIG. Figure 2-4 As shown, the top opening of the crystallization silo 2 is positioned with the positioning plate 4 arranged on the outer wall of the thermal insulation outer layer 6, the U-shaped structure arranged at the top of the positioning plate 4 supports the injection pipe 13, and the support frame 5 arranged at the top of the positioning plate 4 further supports the thermal insulation outer layer 6. When in use, the material pipe 3 supplies copper liquid to the inside of the crystallization silo 2, which is convenient for the copper wire billet to be crystallized and the copper crystal output. A positioning top plate 15 is arranged on the upper end of the thermal insulation inner layer 8 sleeved outside the thermal insulation outer layer 6 to maintain the sealing structure between the thermal insulation outer layer 6 and the thermal insulation inner layer 8, and the circular hole at the top of the positioning top plate 15 is consistent with the guide pipe 20, as shown Figure 2-4 As shown, the guide tube 20 and the separation cover 21 are sleeved to prevent the low-temperature nitrogen from overflowing at the connection between the guide tube 20 and the positioning top plate 15, so as to avoid the low-temperature nitrogen from directly leaking out and causing low-temperature damage to the staff. The exhaust pipe 23 arranged on one side of the positioning top plate 15 is convenient for extracting and replacing the nitrogen inside the insulation inner layer 8 to the outside, wherein the one-way valve arranged at the top of the exhaust pipe 23 prevents the nitrogen from leaking out, reduces the exhaust gas emission during the oxidation process, reduces the pollution to the environment, and conforms to the environmental protection development trend of modern industry;

[0059] Anti-oxidation components include:

[0060] The nitrogen gas nozzle 11 is arranged in three layers equidistantly through the thermal insulation inner layer 8, and the nitrogen gas nozzle 11 is arranged in an inclined shape. A check valve is arranged inside the nitrogen gas nozzle 11, and the nitrogen gas nozzle 11 is a pipeline structure made of low-temperature resistant metal material;

[0061] The connecting ring 12 is arranged in three layers equidistantly between the thermal insulation outer layer 6 and the thermal insulation inner layer 8, and the connecting ring 12 is connected to the nitrogen gas nozzle 11. The connecting ring 12 and the connecting pipe 14 are arranged in a vertical direction, and the connecting pipe 14 connects the three layers of connecting rings 12. The connecting ring 12 and the connecting pipe 14 are both located between the thermal insulation outer layer 6 and the thermal insulation inner layer 8, and the injection pipe 13 connected to one side of the connecting ring 12 at the bottom layer passes through the thermal insulation outer layer 6;

[0062] An injection pipe 13, which is connected to one side of the connecting ring 12 of the bottom layer, a one-way valve is arranged inside the injection pipe 13, and the injection pipe 13 and the connecting pipe 14 are arranged symmetrically;

[0063] A connecting pipe 14, which is connected between the connecting rings 12, and the connecting pipe 14 is arranged inside the thermal insulation outer layer 6 and the thermal insulation inner layer 8;

[0064] A second graphite guide sealing sleeve 16 is arranged in the top opening of the thermal insulation outer layer 6, and the second graphite guide sealing sleeve 16 is arranged in a T-shaped sleeve structure;

[0065] The bottom end of the second shrink inner plate 17 abuts against the inner wall of the second graphite guide seal sleeve 16, the top end of the second shrink inner plate 17 is aligned with the top end of the second graphite guide seal sleeve 16, and the second graphite guide seal sleeve 16 penetrates the top end of the positioning top plate 15;

[0066] The contraction arc piece 18 is arranged at the bottom end of the inner wall surface of the upper end of the contraction inner plate 17, and the contraction arc piece 18 is arranged in an inclined shape. The contraction arc piece 18 and the movable arc piece 19 are annular structures, and the movable arc piece 19 and the contraction arc piece 18;

[0067] The movable arc piece 19 is rotatably connected to the side wall surface of the contraction arc piece 18;

[0068] In conjunction with the accompanying drawings Figure 1-10 As shown, a nitrogen gas nozzle 11 is passed through the inner insulation layer 8, and a connecting ring 12, an injection pipe 13 and a connecting pipe 14 are connected between the outer insulation layer 6 and the inner insulation layer 8. The low-temperature nitrogen is connected through the injection pipe 13 to enter the connecting ring 12 and the connecting pipe 14. The connecting pipe 14 is set with the nitrogen gas nozzle 11, and a one-way valve is set inside the nitrogen gas nozzle 11 to prevent nitrogen from backflowing into the nitrogen gas nozzle 11. Figure 2-4 As shown, the nitrogen gas nozzle 11 is inclined to facilitate the low-temperature nitrogen to flow into the insulating inner layer 8, and discharge all the humid air inside the insulating inner layer 8, reducing the discharge of humid air and oxygen inside the insulating inner layer 8, so that the inside of the insulating inner layer 8 is filled with low-temperature dry nitrogen, reducing the erosion and damage of oxidation to the crystallizer itself, reducing the maintenance cost of the equipment, and extending its service life, so that the high-temperature wire billet enters the low-temperature environment from the graphite guide sealing sleeve 19 and the shrinkage inner plate 10, and is quickly cooled to avoid oxidation of the wire billet under high temperature conditions. The shrinkage inner plate 17 arranged at the upper end of the graphite guide sealing sleeve 16 provides a convergence opening for the shrinkage arc plate 18 and the movable arc plate 19 to avoid direct discharge of low-temperature nitrogen, effectively preventing the oxidation of the metal during the crystallization process, and reducing the generation of oxidized impurities, thereby improving the purity and quality of the crystallized product, so that it has better physical and chemical properties.

[0069] Working principle: When using the upward crystallizer with anti-oxidation device, firstly, the crystallizer socket 1 is connected to the crystallization silo 2, so that the crystallizer socket 1 and the positioning bottom plate 7 are matched to be located inside the crystallization silo 2, so that the internal wire billet passes through the internal hole of the crystallizer socket 1 and enters the thermal insulation inner layer 8. As the wire billet enters the thermal insulation inner layer 8, it passes through the graphite guide sealing sleeve 9 and the shrinkage inner plate 10. There is low-temperature nitrogen in the thermal insulation inner layer 8, wherein the low-temperature nitrogen enters the connecting ring 12 through the injection pipe 13, and the connecting pipe 14 between the connecting rings 12 is used to facilitate the low-temperature nitrogen to be ejected from the nitrogen gas nozzle 11 into the thermal insulation inner layer 8, so that the nitrogen fills the thermal insulation inner layer 8. Since the specific gravity of nitrogen is relatively high, the low-temperature nitrogen in the thermal insulation inner layer 8 is relatively low. The gas is light, enters from the bottom and is discharged from the wire billet outlet, which can completely discharge the humid air in the cooling chamber to form a nitrogen isolation protection range to prevent the wire billet from high-temperature oxidation to form plates. A circular hole is arranged at the top of the thermal insulation outer layer 6 to provide an installation space for the graphite guide sealing sleeve 16. The shrinkage inner plate 17, the shrinkage arc piece 18 and the movable arc piece 19 arranged inside the graphite guide sealing sleeve 16 form a double-layer sealing and tightening structure, which can quickly cool the wire billet under low-temperature nitrogen to prevent the wire billet from oxidizing under high-temperature conditions. With the arrangement of the guide pipe 20, the partition cover 21 and the positioning frame 22, the space at the upper end is extended to prevent the leakage of low-temperature nitrogen. The exhaust pipe 23 arranged at the upper end of the positioning top plate 15 is used to replace the gas inside the thermal insulation inner layer 8.

[0070] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. An upward crystallizer with an anti-oxidation device, comprising: A crystallizer socket (1) is used for docking with an upper active position of an upper crystallization copper wire billet, and the crystallizer socket (1) is located inside a crystallization silo (2), an upper end of the crystallization silo (2) is provided with a thermal insulation outer layer (6), and a thermal insulation inner layer (8) is provided inside the thermal insulation outer layer (6), and the crystallizer socket (1), the crystallization silo (2) and the thermal insulation outer layer (6) are assembled to form a main structural part of the upper crystallizer; The invention is characterized in that: material pipes (3) are equidistantly arranged on the side wall of the crystallization silo (2), and a positioning plate (4) is installed on the upper end of the crystallization silo (2); a support frame (5) is equidistantly arranged on the upper end of the positioning plate (4), and the inner wall surface of the support frame (5) abuts against the outer wall surface of the thermal insulation outer layer (6); a positioning bottom plate (7) is installed on the bottom end of the thermal insulation outer layer (6), and a positioning top plate (15) is installed on the top end of the thermal insulation outer layer (6); the thermal insulation outer layer (6) and the thermal insulation inner layer (8) are concentrically arranged, and an anti-oxidation component is arranged inside the thermal insulation inner layer (8) to prevent oxidation caused by excessive contact between the wire billet entering the thermal insulation inner layer (8) and oxygen; A graphite guide sealing sleeve (9) is arranged in the circular hole at the bottom end of the thermal insulation inner layer (8), and a shrinking inner plate (10) is arranged on the inner wall surface of the graphite guide sealing sleeve (9), and the shrinking inner plate (10) is arranged as a trumpet-shaped plate structure, and the graphite guide sealing sleeve (9) is arranged to be aligned with the center line of the circular hole at the bottom end of the thermal insulation inner layer (8), and the top end of the thermal insulation inner layer (8) is connected to the bottom end of the exhaust pipe (23), and the top end of the exhaust pipe (23) passes through the positioning top plate (15); A guide tube (20) is mounted on the circular hole at the upper end of the positioning top plate (15) and docked therewith. The center line of the guide tube (20) is aligned with the center line of the circular hole of the positioning top plate (15). A partition cover (21) is sleeved on the outside of the guide tube (20). A positioning frame (22) is provided on the upper end of the positioning top plate (15). The upper end of the positioning frame (22) is penetrated by the bottom end of the partition cover (21). The internal cross-sections of the partition cover (21) and the positioning frame (22) form an S-shaped flow channel.

2. The upward crystallizer with an anti-oxidation device according to claim 1, characterized in that: The center line of the crystallizer socket (1) is aligned with the center line of the crystallization silo (2), and the top end of the crystallization silo (2) is snap-connected to the positioning plate (4).

3. The upward crystallizer with an anti-oxidation device according to claim 1, characterized in that: The positioning plate (4) is penetrated by the thermal insulation outer layer (6) and the positioning bottom plate (7), and the inner wall surface of the positioning plate (4) is butted against the outer wall surface of the thermal insulation outer layer (6).

4. The upward crystallizer with an anti-oxidation device according to claim 1, characterized in that: The anti-oxidation component comprises: Nitrogen gas jet nozzles (11) are arranged in three layers at equal intervals and penetrate the thermal insulation inner layer (8), and the nitrogen gas jet nozzles (11) are arranged in an inclined manner; A connecting ring (12) is arranged in three layers at equal intervals between the temperature-insulating outer layer (6) and the temperature-insulating inner layer (8), and the connecting ring (12) is connected to the nitrogen gas injection nozzle (11); An injection pipe (13) connected to one side of the communication ring (12) of the bottom layer; A connecting pipe (14) connected between the connecting rings (12), and the connecting pipe (14) is arranged inside the thermal insulation outer layer (6) and the thermal insulation inner layer (8); A second graphite guide sealing sleeve (16) is arranged in the top opening of the thermal insulation outer layer (6), and the second graphite guide sealing sleeve (16) is arranged in a T-shaped sleeve structure; The second shrink inner plate (17) has its bottom end butted against the inner wall surface of the second graphite guide sealing sleeve (16); A contraction arc piece (18) is arranged at the bottom end of the inner wall surface of the upper end of the second contraction inner plate (17), and the contraction arc piece (18) is arranged in an inclined shape; The movable arc piece (19) is rotatably connected to the side wall surface of the contraction arc piece (18).

5. The upward crystallizer with an anti-oxidation device according to claim 4, characterized in that: A check valve is arranged inside the nitrogen gas injection nozzle (11), and the nitrogen gas injection nozzle (11) is a pipeline structure made of a low-temperature resistant metal material.

6. The upward crystallizer with an anti-oxidation device according to claim 4, characterized in that: The connecting ring (12) and the connecting pipe (14) are arranged in a vertical direction, and the connecting pipe (14) is connected to the three layers of connecting rings (12).

7. The upward crystallizer with an anti-oxidation device according to claim 4, characterized in that: The connecting ring (12) and the connecting pipe (14) are both located between the thermal insulation outer layer (6) and the thermal insulation inner layer (8), and the injection pipe (13) connected to one side of the bottommost connecting ring (12) penetrates the thermal insulation outer layer (6).

8. The upward crystallizer with an anti-oxidation device according to claim 4, characterized in that: A one-way valve is arranged inside the injection pipe (13), and the injection pipe (13) and the connecting pipe (14) are arranged symmetrically.

9. The upward crystallizer with an anti-oxidation device according to claim 4, characterized in that: The top end of the second shrink inner plate (17) is aligned with the top end of the second graphite guide sealing sleeve (16), and the second graphite guide sealing sleeve (16) penetrates the top end of the positioning top plate (15).

10. The upward crystallizer with an anti-oxidation device according to claim 4, characterized in that: The retractable arc piece (18) and the movable arc piece (19) are in an annular structure, and the movable arc piece (19) and the retractable arc piece (18) are in an annular structure.

Citation Information

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