Method for generating metal net
Through the production methods based on semiconductor process, the steps of light engraving, etching, metal deposition, and chemical mechanical polishing are used to solve the problem of unable to produce high -eye metal nets in China, realize efficient and accurate production, reduce costs, Improve product quality.
Patent Information
- Application Number
- CN202411623649.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-14
- Publication Date
- 2025-01-28
AI Technical Summary
The large-scale production of high-quality metal mesh in China is unable to be carried out on a large scale, resulting in products relying on imports, high prices, and traditional production methods have limitations.
The production method based on semiconductor technology is adopted, and the high -eyed metal network is accurately produced through steps such as the light carvings, etching, metal deposition, and chemical mechanical polishing of silicon wafers.
The production of high -efficiency and accurate high -eyed metal network has been realized, the production cost is reduced, the quality and production efficiency of the product are improved, and the domestic technology gap is filled.
Smart Images
Figure FT_1
Abstract
Description
Technical Field
[0001] The invention belongs to the field of electronic technology and mechanical manufacturing technology, and its application involves the fields of electronic technology, biomedical technology, The present invention relates to the technical field of mechanical manufacturing and the technical field of environmental protection, and is a method for producing a metal mesh. Background Art
[0002] Metal mesh is widely used in many fields. In the field of electronic technology, it is mostly used for shielding electromagnetic signals, such as shielding in radio frequency devices. Electromagnetic signal to prevent electromagnetic wave leakage; used for transmission electron microscope, spherical aberration electron microscope and other electron microscope grid production; in the field of biomedical technology, can be used For medical devices and other purposes, small-aperture metal mesh can be used as a droplet atomization component in high-end atomizers; this method is used in the field of mechanical manufacturing to adjust the template By modifying the plate, it is possible to produce extremely small precision parts; in the field of environmental protection technology, it can be used to produce microfiltration membranes, etc. However, at present, most The high-mesh metal mesh with a mesh size of more than 500 meshes is imported, and its imported production method is confidential and expensive. The present invention uses a production method based on semiconductor technology to It has successfully solved the problem of domestic large-scale production of this product, filled the technical gap in related fields, greatly reduced product prices, and has certain economic benefits. economic and technical significance. Summary of the invention
[0003] The present invention aims to provide a method for producing a high-mesh metal mesh, the main steps of which are as follows: Take the silicon wafer, clean it and dry it to ensure the surface of the silicon wafer is clean and ready for subsequent process steps.
[0004] Place the silicon wafer on the glue spreader and spread the glue. After completion, pre-bake it to make the glue layer evenly distributed and initially solidified.
[0005] The photolithography operation is performed to transfer the desired pattern onto the silicon wafer through a specific photolithography process.
[0006] Development: The exposed silicon wafer is developed to make the pattern on the photoresist clearly visible. After development, post-baking is performed to further solidify the photoresist. Etching.
[0007] Etching: Determine the etching depth according to the number of metal meshes and accurately etch the required structure on the silicon wafer.
[0008] Stripping, removing the photoresist on the silicon wafer.
[0009] Metal deposition, where physical vapor deposition technology is used (other deposition technologies can also be used) to deposit the metal mesh material to be produced (such as molybdenum) Placed in the evaporation chamber, the silicon wafer is placed in the evaporator for evaporation, so that the metal material is deposited on the silicon wafer.
[0010] Use chemical mechanical polishing equipment to select the grinding liquid corresponding to the metal mesh produced to grind away the excess that exceeds the level of the unetched silicon wafer. The metal material on the surface ensures the flatness and accuracy of the metal mesh.
[0011] Release, use potassium hydroxide to soak the silicon wafer, corrode the silicon wafer, and release the metal mesh.
[0012] The innovation of the present invention is to use semiconductor technology to achieve efficient and accurate production of high-mesh metal mesh, breaking through the limitations of traditional production methods. Reduced production costs and improved product quality and production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS In the drawings of the specification Figure 1 The flowchart of the present invention is shown in FIG. 1 , and the sequence indicated by the arrows is respectively coating→photolithography→development→etching→stripping→metal deposition→chemical mechanical polishing→releasing; Figure 1 The product can be obtained after the process is carried out.
Claims
1. A method for producing a high-mesh metal mesh, characterized in that The production is carried out using the following steps: silicon wafer cleaning and drying; placing the silicon wafer on the On-machine coating; pre-baking; photolithography; developing; post-baking; Etching, the etching depth is determined by the number of metal meshes; degumming; metal deposition, including Physical vapor deposition (vacuum evaporation, sputtering, arc plasma coating, ion plating, molecular beam epitaxy, etc.), chemical vapor deposition Deposition (atmospheric pressure chemical vapor deposition, low pressure chemical vapor deposition, light-induced chemical vapor deposition, plasma-enhanced chemical vapor deposition, metal Metal deposition methods such as organic compound chemical vapor deposition, high pressure chemical vapor deposition, thermal chemical vapor deposition, etc.) and electrochemical deposition; Use a chemical mechanical polisher to select a corresponding polishing liquid to grind away excess metal material that exceeds the horizontal surface of the unetched silicon wafer; release Release it and soak it in potassium hydroxide solution to corrode the silicon wafer and release the metal mesh.
2. The method for producing a high-mesh metal mesh according to claim 1, characterized in that: The etching depth is determined according to the number of metal meshes. Precise adjustment.
3. The method for producing a high-mesh metal mesh according to claim 1, characterized in that: In the above-mentioned evaporation process, the selection of metal materials Determined according to product requirements.
4. The method for producing a high-mesh metal mesh according to claim 1, characterized in that: During the use of the chemical mechanical polishing machine, The selection of grinding fluid and the adjustment of grinding parameters are based on the material, flatness and precision of the metal mesh.
5. The method for producing a high-mesh metal mesh according to claim 1, characterized in that: During the release process, the concentration of potassium hydroxide And the immersion time is controlled within a reasonable range to ensure that the silicon wafer is completely corroded without damaging the metal mesh.