Semiconductor measurement method and measurement master station

Abstract

The invention relates to a semiconductor measurement method and a measurement main station, and the method comprises the steps: providing a batch of to-be-measured samples, and carrying out the monitoring of the yield of the to-be-measured samples through a measurement main station; when a station passing switch of the measurement main station is turned on, a first cut-in station in the measurement main station is adopted to process the to-be-measured sample, a first passing record of the to-be-measured sample is generated, and the to-be-measured sample is transmitted to a next station; the station passing switch is turned on to represent that the measurement main station samples the to-be-measured samples of the current batch; when a station passing switch of the measurement main station is turned off, a virtual cut-in station in the measurement main station is adopted to generate a virtual passing record of the to-be-measured sample passing through the first cut-in station, and the to-be-measured sample is transmitted to a next station; when the station passing switch is turned off, it is characterized that the measurement main station does not sample the to-be-measured samples of the current batch. According to the invention, the measurement monitoring efficiency and flexibility are improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a semiconductor measurement method and a measurement master site. Background Art

[0002] Currently, in the process of semiconductor product manufacturing, it is necessary to measure and monitor the semiconductor products through multiple measurement stations to monitor product quality and reduce or avoid yield loss of semiconductor products.

[0003] Generally, the measurement site includes multiple main sites (Main Flow), and each main site corresponds to multiple branch sites (Branch Flow). The sampling requirements of the main site will determine the sampling requirements of the corresponding multiple branch sites. However, when the main site has no sampling requirements, the branch sites corresponding to the main site cannot perform sampling, so measurement monitoring cannot be performed, and a large number of products are at risk of yield loss. Summary of the invention

[0004] Based on this, it is necessary to provide a semiconductor measurement method and a measurement main site to reduce or avoid product yield loss caused by the inability to perform measurement and monitoring on some cut-in sites in the measurement main site.

[0005] In a first aspect, the present application provides a semiconductor measurement method, comprising:

[0006] Providing a batch of samples to be tested, and using a main measurement site to monitor the yield of the samples to be tested;

[0007] When the site transfer switch of the measurement main site is turned on, the first entry site in the measurement main site is used to process the sample to be tested, generate the first transfer record of the sample to be tested, and transmit the sample to be tested to the next site; the site transfer switch is turned on to indicate that the measurement main site samples the current batch of samples to be tested;

[0008] When the site transfer switch of the measurement main site is turned off, a virtual entry site in the measurement main site is used to generate a virtual transfer record of the sample to be tested passing through the first entry site, and the sample to be tested is transmitted to the next site; the closing of the site transfer switch indicates that the measurement main site has not sampled the current batch of samples to be tested.

[0009] In one embodiment, before using a measurement master site to perform yield monitoring on the sample to be tested, the semiconductor measurement method includes:

[0010] Classify all actual cut-in sites in the measurement main site to obtain the first cut-in site and the second cut-in site;

[0011] The first entry site processes the sample to be tested when the main measurement site performs sampling, and the second entry site processes all the samples to be tested that pass through the main measurement site.

[0012] In one embodiment, the step of using a main measurement site to perform yield monitoring on the sample to be tested further includes:

[0013] The sample to be tested is processed by the second entry site, a second cargo transfer record of the sample to be tested is generated, and the sample to be tested is transmitted to the next site.

[0014] In one embodiment, after generating any one of the first cargo transfer record, the second cargo transfer record, and the virtual cargo transfer record, the step of transmitting the sample to be tested to the next station includes:

[0015] In the case that there are remaining actual cut-in sites in the current measurement main site, the sample to be measured is transferred to the next actual cut-in site;

[0016] When there is no remaining actual cut-in site in the current measurement main site, the sample to be measured is transferred to the next measurement main site.

[0017] In one embodiment, the first entry site is used to process the sample to be tested, comprising:

[0018] Measuring the sample to be tested to monitor the yield of the sample to be tested;

[0019] Alternatively, the sample to be tested is subjected to surface treatment so that the next station can measure the sample to be tested.

[0020] In one embodiment, when the sampling probability of the main measurement site measuring the sample to be measured is zero, the site cargo switch is closed;

[0021] When the sampling probability of the main measurement site measuring the samples to be tested is between zero and one, the site cargo transfer switch is turned on when the main measurement site draws the samples to be tested of the current batch for sampling, and is turned off when the main measurement site does not draw the samples to be tested of the current batch for sampling;

[0022] When the sampling probability of the main measurement site measuring the sample to be measured is one, the site cargo passing switch is turned on.

[0023] In a second aspect, the present application further provides a measurement master site, including:

[0024] A site cargo switch, used to indicate the working status of the measurement master site;

[0025] A plurality of first entry sites, used for processing the samples to be tested inputted into the main measurement site when the cargo transfer switch of the site is turned on;

[0026] A virtual entry site is used to generate a virtual cargo transfer record of the sample to be tested passing through the first entry site when the cargo transfer switch of the site is turned off.

[0027] In one embodiment, the measurement master site further includes:

[0028] A plurality of second entry sites are used to process all the samples to be tested.

[0029] In one embodiment, the measurement main site includes one of a film thickness measurement main site and a feature size measurement main site.

[0030] In one embodiment, the measurement master site is used to perform yield monitoring on a batch of samples to be tested in the semiconductor measurement method described in the present application.

[0031] The unexpected effect of the present application is: by setting a first entry site and a virtual entry site in the measurement main site, and controlling the first entry site or the virtual entry site in the measurement main site through the site transfer switch, different processing is performed on the samples to be measured respectively, so as to dynamically and flexibly realize different working requirements under different working conditions of the measurement main site, thereby meeting different sampling requirements and monitoring requirements, and improving the monitoring efficiency and flexibility during the measurement process. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0033] Figure 1 This is a flow chart of a semiconductor measurement method provided in one embodiment of the present application.

[0034] Figure 2 A schematic diagram of the structure of a measurement master site provided in one of the embodiments of the present application.

[0035] The reference numerals include: 100 - measurement main site; 110 - first cut-in site; 120 - second cut-in site; 130 - virtual cut-in site. DETAILED DESCRIPTION

[0036] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the present application are provided in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0037] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0038] It should be understood that when an element or layer is referred to as "on ...", "adjacent to ...", "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to other elements or layers, or there can be intervening elements or layers. On the contrary, when an element is referred to as "directly on ...", "directly adjacent to ...", "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers, doping types and / or parts, these elements, components, regions, layers, doping types and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, doping type or part from another element, component, region, layer, doping type or part. Therefore, without departing from the teachings of the present application, the first element, component, region, layer, doping type or portion discussed below may be represented as a second element, component, region, layer or portion; for example, the first doping type may be referred to as the second doping type, and similarly, the second doping type may be referred to as the first doping type; the first doping type and the second doping type are different doping types, for example, the first doping type may be P-type and the second doping type may be N-type, or the first doping type may be N-type and the second doping type may be P-type.

[0039] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," and the like may be used herein to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that, in addition to the orientations shown in the figures, spatially relative terms also include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is flipped, an element or feature described as "under other elements" or "under it" or "under it" will be oriented as being "above" the other elements or features. Thus, the exemplary terms "under" and "under" may include both upper and lower orientations. In addition, the device may also include additional orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptors used herein are interpreted accordingly.

[0040] When used herein, the singular forms "a", "an" and " / the" may also include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include / comprise" or "have" and the like specify the presence of stated features, wholes, steps, operations, components, parts or combinations thereof, but do not exclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts or combinations thereof. At the same time, in this specification, the term "and / or" includes any and all combinations of the relevant listed items.

[0041] In general semiconductor measurement methods, the sampling probability (Sampling) of the measurement main site will be set according to actual needs. When the sampling probability of the measurement main site is 0%, the measurement main site will not perform random sampling monitoring on the samples to be tested. Accordingly, the multiple actual entry sites contained in the current measurement main site do not need to process the samples to be tested. When the sampling probability of the measurement main site is greater than 0%, random sampling monitoring will be performed on different batches of samples to be tested according to different sampling probabilities. The multiple actual entry sites contained in the current measurement main site will process the samples to be tested that are randomly selected and generate corresponding delivery records.

[0042] It should be noted that in the measurement main site, different actual entry sites have different functions, among which, the processing of the samples to be tested by some actual entry sites is a necessary link for monitoring the product yield, while the other actual entry sites only need to process the samples to be tested when they are selected. For example, the measurement main site used to monitor the copper process includes at least a back-end cleaning entry site and a surface defect detection entry site, among which, the back-end cleaning entry site usually cleans the back of the samples to be tested that are selected for sampling, so that the subsequent related tests can be carried out smoothly, while the surface defect detection entry site needs to detect all the samples to be tested that have completed the copper process, so as to monitor whether the status of each batch of samples to be tested after the copper process meets the process requirements.

[0043] However, when the sampling probability of the measurement main site is 0%, the multiple actual entry sites included in the current measurement main site do not need to process the samples to be tested. Therefore, some actual entry sites included in the measurement main site cannot process the samples to be tested that are not selected for sampling (for example, the surface defect detection entry site cannot detect the samples to be tested that have completed the copper process), resulting in the risk of missing measurement monitoring for some batches of samples to be tested, which may even lead to a large number of product yield losses in serious cases.

[0044] In order to solve the above problems, the present application provides a semiconductor measurement method and a measurement main site to reduce or avoid product yield loss caused by the inability to perform measurement and monitoring on some cut-in sites in the measurement main site.

[0045] Figure 1 A flow chart of a semiconductor measurement method provided in one embodiment of the present application. Figure 1 The semiconductor measurement method provided in the present application includes steps S01 to S03.

[0046] Step S01: providing a batch of samples to be tested, and using a main measurement site to monitor the yield of the samples to be tested.

[0047] Step S02: When the site transfer switch of the measurement main site is turned on, the first entry site in the measurement main site is used to process the sample to be tested, generate the first transfer record of the sample to be tested, and transmit the sample to be tested to the next site; the site transfer switch is turned on to indicate that the measurement main site samples the current batch of samples to be tested.

[0048] Step S03: When the site transfer switch of the measurement main site is turned off, a virtual entry site in the measurement main site is used to generate a virtual transfer record of the sample to be tested passing through the first entry site, and the sample to be tested is transmitted to the next site; the site transfer switch being turned off indicates that the measurement main site has not sampled the current batch of samples to be tested.

[0049] The semiconductor measurement method as described above sets a first entry site and a virtual entry site in the measurement main site, and controls the first entry site or the virtual entry site in the measurement main site through the site transfer switch to perform different processing on the samples to be measured, so as to dynamically and flexibly realize different working requirements under different working conditions of the measurement main site, thereby meeting different sampling requirements and monitoring requirements, and improving the monitoring efficiency and flexibility in the measurement process.

[0050] See also Figure 2In one embodiment, before using a measurement main site 100 to monitor the yield of a sample to be tested (not shown in the figure), the semiconductor measurement method includes: classifying all actual entry sites in the measurement main site 100 to obtain a first entry site 110 and a second entry site 120; wherein the first entry site 110 processes the sample to be tested when the measurement main site 100 performs sampling, and the second entry site 120 processes all samples to be tested that pass through the measurement main site 100.

[0051] It should be noted that different measurement main sites 100 have different corresponding functions, and different measurement main sites 100 need to perform corresponding yield monitoring on the samples to be tested after different process steps. Before the monitoring link of some process steps, the samples to be tested need to be pre-processed. Therefore, the measurement main site 100 needs to be set with corresponding actual entry sites to perform corresponding processing on the samples to be tested that are sampled and drawn for yield monitoring. At the same time, the measurement main site 100 is also provided with actual entry sites for routine processing of all samples to be tested, such as cleaning processing and surface defect monitoring processing, to ensure the smooth progress of the process.

[0052] In combination with the above content, it can be seen that since some actual entry sites in the measurement main site 100 usually only process the samples to be tested that are sampled and drawn, and other actual entry sites need to process all samples to be tested, therefore, the present application defines the actual entry site for processing the sampled samples to be tested as the first entry site 110, and defines the actual entry site for processing all samples to be tested as the second entry site 120, so as to dynamically and flexibly realize different work requirements under different working conditions of the measurement main site 100.

[0053] In one embodiment, the first entry site 110 is used to process the sample to be tested, including: measuring the sample to be tested to monitor the yield of the sample to be tested; or performing surface treatment on the sample to be tested so that the next site can measure the sample to be tested.

[0054] In one embodiment, the process of using a main measurement site 100 to monitor the yield of the sample to be tested also includes: using a second entry site 120 to process the sample to be tested, generating a second transfer record of the sample to be tested, and transmitting the sample to be tested to the next site.

[0055] In one embodiment, after generating any one of the first goods-passing record, the second goods-passing record, and the virtual goods-passing record, transferring the sample to be measured to the next station includes: when there are remaining actual cutting-in stations in the current main measurement station, transferring the sample to be measured to the next actual cutting-in station; when there are no remaining actual cutting-in stations in the current main measurement station, transferring the sample to be measured to the next main measurement station.

[0056] It should be noted that referring to Figure 2 , since the measurement order of multiple main measurement stations 100 and the processing order of multiple actual cutting-in stations corresponding to a single main measurement station 100 are usually set on the production line, therefore, after generating any one of the first goods-passing record, the second goods-passing record, and the virtual goods-passing record, the sample to be measured can be directly transferred to the next station according to the set station order (the specific order can refer to the arrow directions in Figure 2 ).

[0057] In one embodiment, when the sampling probability P of the main measurement station 100 for measuring the sample to be measured is zero (i.e., P = 0%), the station goods-passing switch is closed; when the sampling probability of the main measurement station 100 for measuring the sample to be measured is between zero and one (i.e., 0% < P < 100%), the station goods-passing switch is opened when the main measurement station 100 selects the sample to be measured in the current batch for sampling, and is closed when the main measurement station 100 does not select the sample to be measured in the current batch for sampling; when the sampling probability of the main measurement station for measuring the sample to be measured is one (i.e., P = 100%), the station goods-passing switch is opened.

[0058] Correspondingly, continuing to refer to Figure 2 , one embodiment of the present application further provides a main measurement station 100, including: a station goods-passing switch (not shown in the figure), used to represent the working state of the main measurement station 100; several first cutting-in stations 110, used to process the sample to be measured input to the main measurement station 100 when the station goods-passing switch is opened; a virtual cutting-in station 130, used to generate a virtual goods-passing record of the sample to be measured passing through the first cutting-in stations 110 when the station goods-passing switch is closed.

[0059] In one embodiment, the main measurement station 100 further includes several second cutting-in stations 120, used to process all samples to be measured.

[0060] In one embodiment, the main measurement station 100 includes one of a film thickness main measurement station and a critical dimension (CD) main measurement station. In other embodiments of the present application, the main measurement station 100 further includes other common measurement stations to meet the measurement requirements of each link in the process, which are not listed one by one here.

[0061] In one embodiment, the main measurement site 100 is used to monitor the yield of a batch of samples to be tested in the semiconductor measurement method provided in the aforementioned application.

[0062] The following uses a measurement main site for monitoring samples to be tested that have completed a copper process as an example to introduce the application of the semiconductor measurement method provided by the present application.

[0063] A batch of samples to be tested that have completed the copper process are provided, and the samples to be tested in the current batch are input into a main measurement site. The main measurement site includes a first entry site for wafer back cleaning and a second entry site for surface defect detection.

[0064] When the measurement main site draws the samples to be tested of the current batch, the site transfer switch of the measurement main site is turned on, and the measurement main site samples the samples to be tested of the current batch. Correspondingly, the first entry site performs back cleaning on the samples to be tested of the current batch and generates a first transfer record, and the second entry site performs surface defect detection on the samples to be tested of the current batch and generates a second transfer record.

[0065] In the case that the measurement main site does not draw the samples of the current batch, the site transfer switch of the measurement main site is turned off. Accordingly, the virtual entry site generates a virtual transfer record of the samples of the current batch processed by the first entry site, and the second entry site performs surface defect detection on the samples of the current batch and generates a second transfer record.

[0066] It can be seen that the measurement master site and semiconductor measurement method provided by the present application can dynamically and flexibly realize different sampling requirements of the measurement master site, thereby improving customer satisfaction and increasing customer confidence in wafer investment.

[0067] The unexpected effect of the present application is: by setting a first entry site and a virtual entry site in the measurement main site, and controlling the first entry site or the virtual entry site in the measurement main site through the site transfer switch, different processing is performed on the samples to be measured respectively, so as to dynamically and flexibly realize different working requirements under different working conditions of the measurement main site, thereby meeting different sampling requirements and monitoring requirements, and improving the monitoring efficiency and flexibility during the measurement process.

[0068] In the description of this specification, the description with reference to the terms "some embodiments", "other embodiments", "ideal embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.

[0069] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features of the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0070] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the application. It should be noted that, for a person of ordinary skill in the art, several modifications and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A semiconductor measurement method, characterized in that: include: Providing a batch of samples to be tested, and using a main measurement site to monitor the yield of the samples to be tested; When the site transfer switch of the measurement main site is turned on, the sample to be tested is processed using the first entry site in the measurement main site, a first transfer record of the sample to be tested is generated, and the sample to be tested is transmitted to the next site; The station cargo transfer switch being turned on indicates that the main measurement station is sampling the samples to be tested in the current batch; When the site transfer switch of the measurement main site is turned off, a virtual entry site in the measurement main site is used to generate a virtual transfer record of the sample to be tested passing through the first entry site, and the sample to be tested is transferred to the next site; The closing of the site cargo transfer switch indicates that the main measurement site has not sampled the samples to be tested in the current batch.

2. The semiconductor measurement method according to claim 1, characterized in that: Before using a main measurement site to monitor the yield of the sample to be tested, the semiconductor measurement method includes: Classify all actual cut-in sites in the measurement main site to obtain the first cut-in site and the second cut-in site; The first entry site processes the sample to be tested when the main measurement site performs sampling, and the second entry site processes all the samples to be tested that pass through the main measurement site.

3. The semiconductor measurement method according to claim 2, characterized in that: The method of using a main measurement site to monitor the yield of the sample to be tested also includes: The sample to be tested is processed by the second entry site, a second cargo transfer record of the sample to be tested is generated, and the sample to be tested is transmitted to the next site.

4. The semiconductor measurement method according to claim 3, characterized in that: After generating any one of the first cargo transfer record, the second cargo transfer record, and the virtual cargo transfer record, the step of transmitting the sample to be tested to the next station includes: In the case that there are remaining actual cut-in sites in the current measurement main site, the sample to be measured is transferred to the next actual cut-in site; When there is no remaining actual cut-in site in the current measurement main site, the sample to be measured is transferred to the next measurement main site.

5. The semiconductor measurement method according to claim 1, wherein: The first entry site is used to process the sample to be tested, comprising: Measuring the sample to be tested to monitor the yield of the sample to be tested; Alternatively, the sample to be tested is subjected to surface treatment so that the next station can measure the sample to be tested.

6. The semiconductor measurement method according to claim 1, characterized in that: When the sampling probability of the main measurement site measuring the sample to be measured is zero, the site cargo switch is closed; When the sampling probability of the main measurement site measuring the samples to be tested is between zero and one, the site cargo transfer switch is turned on when the main measurement site draws the samples to be tested of the current batch for sampling, and is turned off when the main measurement site does not draw the samples to be tested of the current batch for sampling; When the sampling probability of the main measurement site measuring the sample to be measured is one, the site cargo passing switch is turned on.

7. A measurement master site, characterized in that: include: A site cargo switch, used to indicate the working status of the measurement master site; A plurality of first entry sites, used for processing the samples to be tested inputted into the main measurement site when the cargo transfer switch of the site is turned on; A virtual entry site is used to generate a virtual cargo transfer record of the sample to be tested passing through the first entry site when the cargo transfer switch of the site is turned off.

8. The measurement master station according to claim 7, characterized in that: The measurement master site also includes: A plurality of second entry sites are used to process all the samples to be tested.

9. The measurement master station according to claim 7, characterized in that: The measurement main site includes one of a film thickness measurement main site and a feature size measurement main site.

10. The measurement master station according to claim 7, characterized in that: The main measurement site is used to perform yield monitoring on a batch of samples to be tested in the semiconductor measurement method according to any one of claims 1 to 6.

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