Glass substrate through hole method

Abstract

The invention belongs to the technical field of semiconductors, and particularly relates to a through hole method for a glass substrate, which comprises the following steps of: a) plating an acid-resistant protective layer on the glass substrate through double-sided magnetron sputtering; b) sequentially carrying out photoresist coating, exposure and development on the two surfaces of the double-surface film-coated substrate to form a mark and a preset hole; c) performing deplating forming on the substrate treated in the step b), and removing the residual photoresist on the surface of the substrate; d) performing double-sided laser drilling treatment on the substrate treated in the step c); e) etching the substrate treated in the step d), so that a through hole with a required specification is formed in the laser drilling position of the substrate; and f) carrying out demolding and deplating on the substrate treated in the step e). According to the invention, the protection of the double-sided plating layer is utilized, so that the glass is not thinned in the subsequent through hole process, and the reliability of the thickness of the substrate after the through hole is ensured; and the plating layer can also prevent the increase and amplification of pits and scratches in the etching process of the glass, so that the apparent quality of the through hole device is improved.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductors, and in particular relates to a through-hole method for a glass substrate. Background Art

[0002] At present, the main process of preparing through-hole devices using glass substrates is: first obtain a glass substrate of a set thickness, then laser drill, and then etch the through holes to obtain a glass substrate of a certain thickness and through-hole diameter.

[0003] Under the current through-hole method, the through-hole efficiency will vary for different substrate materials and thicknesses. The glass substrate will gradually become thinner during the through-hole process, and its thinning thickness (relative to different materials and thicknesses) is a variable with differences. The aperture and final thickness after through-hole drilling using the conventional through-hole method are difficult to meet the needs of different projects at the same time. In the actual production process, the aperture is limited by thickness and material, which increases the difficulty of process control.

[0004] In addition, under the current through-hole method, during the through-hole etching process, the glass substrate is continuously added and enlarged with pits and scratches in the etching solution, resulting in poor surface quality of the substrate, which requires further repair (more serious ones cannot be repaired), thereby reducing efficiency and product quality. Summary of the invention

[0005] In view of this, an object of the present invention is to provide a through-hole method for a glass substrate, which can obtain a glass-based through-hole device with stable substrate thickness and excellent appearance quality.

[0006] The present invention provides a through-hole method for a glass substrate, comprising the following steps:

[0007] a) magnetron sputtering the glass substrate on both sides to coat the acid-resistant protective layer to obtain a double-sided coated substrate;

[0008] b) coating, exposing and developing the double-sided coated substrate with photoresist in sequence to form marks and preset holes, wherein the marks and preset holes formed on both sides of the substrate correspond to each other;

[0009] c) stripping the substrate processed in step b) to remove the coating in the preset holes of the substrate by etching to reveal the glass substrate; then removing the photoresist remaining on the surface of the substrate;

[0010] d) performing double-sided laser drilling on the substrate with the glass substrate hole etched therein obtained in step c), wherein the drilling positions are located within the glass substrate hole;

[0011] e) etching the substrate processed in step d) to form through holes of required specifications at the laser-punched holes of the substrate;

[0012] f) stripping the substrate treated in step e) to remove the residual coating on the surface of the substrate.

[0013] Preferably, in step a), the components of the acid-resistant protective layer include one or more of molybdenum, lead, nickel, chromium and copper.

[0014] Preferably, in step a), the coating thickness of the acid-resistant protective layer is 200 to 2000 nm.

[0015] Preferably, in step b), the diameter of the preset hole is 20-200 μm.

[0016] Preferably, in step b), the overlap error between the corresponding marks and the preset holes formed on both side surfaces of the substrate is ≤10 μm.

[0017] Preferably, in step c), the stripping molding is performed by immersing the substrate treated in step b) in a plating etching solution, the immersion temperature is 25 to 30° C., and the immersion time is 1 to 20 minutes.

[0018] Preferably, in step c), the photoresist is removed by ultrasonic cleaning in a degumming solution.

[0019] Preferably, in step e), the etching is carried out by immersing the substrate processed in step d) in HF etching solution.

[0020] Preferably, in step e), the HF concentration of the HF etching solution is 5-30 wt %, the immersion temperature is 26-35° C., and the etching rate is less than 3 μm / min.

[0021] Preferably, in step f), the stripping and deplating is performed by immersing the substrate treated in step e) in a deplating solution, the immersion temperature is 30 to 45° C., and the immersion time is 10 to 30 minutes.

[0022] Compared with the prior art, the present invention provides a through-hole method for a glass substrate, comprising the following steps: a) subjecting a glass substrate to double-sided magnetron sputtering acid-resistant protective layers to obtain a double-sided coated substrate; b) subjecting both sides of the double-sided coated substrate to photoresist coating, exposure and development in sequence to form marks and preset holes, wherein the marks and preset holes formed on both sides of the substrate correspond to each other; c) subjecting the substrate processed in step b) to stripping and forming, so that the coating in the preset hole of the substrate is etched away to reveal the glass substrate; and then removing the photoresist remaining on the surface of the substrate; d) subjecting the substrate processed in step c) to double-sided laser drilling, wherein the drilling position is located in the glass substrate hole; e) subjecting the substrate processed in step d) to etching, so that through holes of required specifications are formed at the laser drilling position of the substrate; and f) subjecting the substrate processed in step e) to stripping and stripping, so that the coating remaining on the surface of the substrate is removed. The present invention utilizes the protection of double-sided coating, and the glass will not be thinned in the subsequent through-hole process, thereby ensuring the reliability of the substrate thickness after the through-hole; and the coating can also prevent the addition and amplification of pits and scratches on the glass during the etching process, thereby improving the apparent quality of the through-hole device. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying creative work.

[0024] Figure 1 It is a schematic diagram of a through-hole method provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0025] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0026] The present invention provides a through-hole method for a glass substrate, comprising the following steps:

[0027] a) magnetron sputtering the glass substrate on both sides to coat the acid-resistant protective layer to obtain a double-sided coated substrate;

[0028] b) coating, exposing and developing the double-sided coated substrate with photoresist in sequence to form marks and preset holes, wherein the marks and preset holes formed on both sides of the substrate correspond to each other;

[0029] c) stripping the substrate processed in step b) to remove the coating in the preset holes of the substrate by etching to reveal the glass substrate; then removing the photoresist remaining on the surface of the substrate;

[0030] d) performing double-sided laser drilling on the substrate with the glass substrate hole etched therein obtained in step c), wherein the drilling positions are located within the glass substrate hole;

[0031] e) etching the substrate processed in step d) to form through holes of required specifications at the laser-punched holes of the substrate;

[0032] f) stripping the substrate treated in step e) to remove the residual coating on the surface of the substrate.

[0033] In the method provided by the present invention, in step a), the material of the glass substrate includes but is not limited to high borosilicate material or medium alumina material; the SiO2 content of the high borosilicate material is preferably ≥75wt%, more preferably ≥80wt%, and the B2O3 content is preferably ≥10wt%, more preferably ≥13wt%; the Al2O3 content of the medium alumina material is preferably 10-20wt%, more preferably 15wt%. In the present invention, the size and thickness of the glass substrate are set as needed, and the two surfaces of the glass substrate are named A surface and B surface respectively.

[0034] In the method provided by the present invention, in step a), the acid-resistant protective layer has the ability to resist HF, and its components include one or more of molybdenum, lead, nickel, chromium and copper. In the present invention, the component of the acid-resistant protective layer can further be selected from one of molybdenum element, nickel-copper alloy (such as Ni70Cu30) and nickel-chromium-molybdenum alloy (such as Hastelloy C276).

[0035] In the method provided by the present invention, in step a), the coating thickness of the acid-resistant protective layer is preferably 200-2000nm, specifically 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, 1000nm, 1100nm, 1200nm, 1300nm, 1400nm, 1500nm, 1600nm, 1700nm, 1800nm, 1900nm or 2000nm.

[0036] In the method provided by the present invention, in step b), the photoresist coating, exposure and development are performed according to a pre-designed drawing.

[0037] In the method provided by the present invention, in step b), the photoresist has a certain corrosion resistance, more specifically, the photoresist should have the property of not being corroded by the subsequent stripping molding etching solution.

[0038] In the method provided by the present invention, in step b), the mark is a positioning mark corresponding to the A surface and the B surface formed by exposure and development at the four corners of the substrate.

[0039] In the method provided by the present invention, in step b), the pore size of the preset hole formed by the development is set as needed, preferably 20 to 200 μm, specifically 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, 110 μm, 120 μm, 130 μm, 140 μm, 150 μm, 160 μm, 170 μm, 180 μm, 190 μm or 200 μm.

[0040] In the method provided by the present invention, in step b), the overlap error between the corresponding marks and preset holes formed on the surfaces A and B of the substrate is preferably ≤10μm, specifically 0μm, 1μm, 2μm, 3μm, 4μm, 5μm, 6μm, 7μm, 8μm, 9μm or within 10μm.

[0041] In the method provided by the present invention, in step c), the purpose of performing the stripping molding is to further remove the coating in the preset holes of the substrate to expose the glass substrate.

[0042] In the method provided by the present invention, in step c), the stripping molding method is preferably to immerse the substrate treated in step b) in a coating etching solution; during the immersion process, the acid-resistant protective layer in the preset hole of the substrate is etched away by the etching solution, exposing the glass substrate, while the acid-resistant protective layer of the substrate outside the preset hole will not react with the etching solution due to the protection of the photoresist. In the present invention, the coating etching solution is selected according to the acid-resistant protective layer plated in the previous order, such as when the acid-resistant protective layer is a nickel-copper alloy, a copper chloride etching solution can be selected; the immersion temperature is preferably 25 to 30°C, specifically 25°C, 26°C, 27°C, 28°C, 29°C or 30°C; the immersion time is preferably 1 to 20 minutes, specifically 1 minute, 2 minutes, 3 minutes, 4 minutes, 5 minutes, 6 minutes, 7 minutes, 8 minutes, 9 minutes, 10 minutes, 11 minutes, 12 minutes, 13 minutes, 14 minutes, 15 minutes, 16 minutes, 17 minutes, 18 minutes, 19 minutes or 20 minutes.

[0043] In the method provided by the present invention, in step c), the photoresist is removed by ultrasonic cleaning in a degumming solution; the degumming solution is preferably an alkaline degumming solution, and its components preferably include NaOH.

[0044] In the method provided by the present invention, in step d), the position of the laser drilling is preferably the center of the hole shape of the glass substrate.

[0045] In the method provided by the present invention, in step e), the etching method is preferably to immerse the substrate treated in step d) in HF etching solution; wherein the HF concentration of the HF etching solution is preferably 5-30wt%, specifically 5wt%, 7wt%, 10wt%, 12wt%, 15wt%, 17wt%, 20wt%, 23wt%, 25wt%, 27wt% or 30wt%; the immersion temperature is preferably 26-35°C, specifically 26°C, 27°C, 28°C, 29°C, 30°C, 31°C, 32°C, 33°C, 34°C or 35°C; the etching rate is preferably <3μm / min, specifically 2.5μm / min.

[0046] In the method provided by the present invention, in step f), the stripping and deplating method is preferably to immerse the substrate treated in step e) in a deplating solution; wherein the deplating solution is selected according to the acid-resistant protective layer plated previously, such as when the acid-resistant protective layer is a nickel-copper alloy, a cupric chloride etching solution can be selected; the immersion temperature is preferably 30-45°C, specifically 30°C, 31°C, 32°C, 33°C, 34°C, 35°C, 36°C, 37°C, 38°C, 39°C, 40°C, 41°C, 42°C, 43°C, 44°C or 45°C; the immersion time is preferably 10-30min, specifically 10min, 11min, 12min, 13min, 14min, 15min, 16min, 17min, 18min, 19min, 20min, 21min, 22min, 23min, 24min, 25min, 26min, 27min, 28min, 29min or 30min.

[0047] In the method provided by the present invention, in step f), the stripping solution can be a mixture of hydrochloric acid and hydrogen peroxide, which can simultaneously remove the residual photoresist and the acid-resistant protective layer on the surface of the substrate. In the present invention, the mixture of hydrochloric acid and hydrogen peroxide can be prepared by 5 parts by mass of 37wt% hydrochloric acid, 2 parts by mass of 30wt% hydrogen peroxide and 3 parts by mass of water.

[0048] The present invention utilizes the protection of double-sided coating, and the glass will not be thinned in the subsequent through-hole process, thereby ensuring the reliability of the substrate thickness after the through-hole; and the coating can also prevent the addition and amplification of pits and scratches on the glass during the etching process, thereby improving the apparent quality of the through-hole device.

[0049] For the purpose of greater clarity, the present invention is described in detail with reference to the following examples and comparative examples.

[0050] Example 1

[0051] The required indicators are: substrate through-hole thickness: 0.5±0.02mm; inner / outer aperture: ≥50 / ≤200μm.

[0052] This embodiment proposes a through-hole method for a glass substrate based on the above-mentioned demand indicators, referring to Figure 1 , including the following steps:

[0053] 1) Providing a glass substrate, which is made of high borosilicate (80wt% SiO2, 13wt% B2O3), with the upper and lower surfaces of the substrate respectively named as surface A and surface B; setting the initial thickness of the glass substrate according to the specifications required by the project, the set thickness of this embodiment is 0.5mm, and the measured thickness of the glass substrate used is 0.501-0.506mm.

[0054] 2) The glass substrate is double-sidedly magnetron sputtered to coat an acid-resistant protective layer to obtain a double-sided coated substrate, wherein the acid-resistant protective layer is composed of a nickel-copper alloy (Ni70Cu30) and has a thickness of 500 nm.

[0055] 3) The double-sided coated substrate is sequentially subjected to photoresist coating, exposure and development to form marks and preset holes, and the marks and preset holes formed on the A surface and the B surface of the substrate correspond to each other. The photoresist used is a wet film photoresist, the main components of which are photosensitive resin, photoinitiator and solvent; the marks are positioning marks corresponding to the A surface and the B surface formed by exposure and development at the four corners of the substrate; the aperture of the preset hole is 50μm; the overlap error of the marks and preset holes formed on the A and B surfaces of the substrate corresponding to each other is within 3μm.

[0056] 4) Soaking the substrate treated in step 3) in a coating etching solution for stripping, so that the coating in the preset hole of the substrate is etched away to reveal the glass substrate; then, the substrate is ultrasonically cleaned in a degumming solution to remove the photoresist remaining on the surface of the substrate. The coating etching solution used is a cupric chloride etching solution; the immersion temperature is 28°C, and the immersion time is 10 minutes; the degumming solution used is an alkaline degumming solution, and its main component is NaOH.

[0057] 5) The substrate with the glass substrate hole etched therein obtained in step 4) is subjected to double-sided laser drilling, the drilling position is located at the center of the glass substrate hole, and the spot aperture is controlled to be 5 μm.

[0058] 6) Immersing the substrate treated in step 5) in HF etching solution for etching, so that through holes of required specifications are formed at the laser-punched holes of the substrate. The HF etching solution used has an HF concentration of 10 wt%, an etching temperature of 30° C., and an etching rate of 2.5 μm / min.

[0059] 7) Soaking the substrate treated in step 5) in a stripping solution to remove the residual coating on the substrate surface. The stripping solution comprises: 5 parts by weight of 37 wt% hydrochloric acid, 2 parts by weight of 30 wt% hydrogen peroxide and 3 parts by weight of water; the stripping temperature is 45° C. and the stripping time is 15 min.

[0060] Example 2

[0061] The required indicators are: substrate through-hole thickness: 0.5±0.02mm; inner / outer aperture: ≥50 / ≤200μm.

[0062] This embodiment proposes a through-hole method for a glass substrate based on the above-mentioned demand indicators, referring to Figure 1 , including the following steps:

[0063] 1) Providing a glass substrate, which is made of alumina (60wt% SiO2, 15wt% Al2O3, 15wt% Na2O, 7wt% K2O), with the upper and lower surfaces of the substrate respectively named as surface A and surface B; setting the initial thickness of the glass substrate according to the specifications required by the project, the set thickness of the present embodiment is 0.5 mm, and the measured thickness of the glass substrate used is 0.505-0.511 mm.

[0064] 2) The glass substrate is double-sidedly magnetron sputtered to coat an acid-resistant protective layer to obtain a double-sided coated substrate, wherein the acid-resistant protective layer is composed of a nickel-copper alloy (Ni70Cu30) and has a thickness of 500 nm.

[0065] 3) The double-sided coated substrate is sequentially subjected to photoresist coating, exposure and development to form marks and preset holes, and the marks and preset holes formed on the A and B surfaces of the substrate correspond to each other. The photoresist used is a wet film photoresist, the main components of which are photosensitive resin, photoinitiator and solvent; the marks are positioning marks corresponding to the A and B surfaces formed at the four corners of the substrate by exposure and development; the aperture of the preset hole is 70 μm; the overlap error of the marks and preset holes formed on the A and B surfaces of the substrate corresponding to each other is within 3 μm.

[0066] 4) Soaking the substrate treated in step 3) in a coating etching solution for stripping, so that the coating in the preset hole of the substrate is etched away to reveal the glass substrate; then, the substrate is ultrasonically cleaned in a degumming solution to remove the photoresist remaining on the surface of the substrate. The coating etching solution used is a cupric chloride etching solution; the immersion temperature is 28°C, and the immersion time is 10 minutes; the degumming solution used is specifically an alkaline degumming solution, and its main component is NaOH.

[0067] 5) The substrate with the glass substrate hole etched therein obtained in step 4) is subjected to double-sided laser drilling, the drilling position is located at the center of the glass substrate hole, and the spot aperture is controlled to be 5 μm.

[0068] 6) Immersing the substrate treated in step 5) in HF etching solution for etching, so that through holes of required specifications are formed at the laser-punched holes of the substrate. The HF etching solution used has an HF concentration of 5wt%, an etching temperature of 28°C, and an etching rate of 2.5μm / min.

[0069] 7) Soaking the substrate treated in step 5) in a stripping solution to remove the residual coating on the substrate surface. The stripping solution comprises: 5 parts by weight of 37 wt% hydrochloric acid, 2 parts by weight of 30 wt% hydrogen peroxide and 3 parts by weight of water; the stripping temperature is 45° C. and the stripping time is 15 min.

[0070] Comparative Example 1

[0071] The required indicators are: substrate through-hole thickness: 0.5±0.02mm; inner / outer aperture: ≥50 / ≤200μm.

[0072] This comparative example proposes a through-hole method for a glass substrate based on the above-mentioned demand indicators, comprising the following steps:

[0073] 1) Providing a glass substrate, which is made of high borosilicate (80wt% SiO2, 13wt% B2O3), with the upper and lower surfaces of the substrate respectively named as surface A and surface B; setting the initial thickness of the glass substrate according to the specifications required by the project, the set thickness of this embodiment is 0.5mm, and the measured thickness of the glass substrate used is 0.505-0.511mm.

[0074] 2) According to the pre-drawn drawings, the glass substrate is double-sided laser punched, and the spot aperture is controlled to 5μm.

[0075] 3) Immersing the substrate processed in step 2) in HF etching solution for etching, so that through holes of required specifications are formed at the laser-punched holes of the substrate. The HF etching solution used has an HF concentration of 10 wt%, an etching temperature of 30° C., and an etching rate of 2.5 μm / min.

[0076] Comparative Example 2

[0077] The required indicators are: substrate through-hole thickness: 0.5±0.02mm; inner / outer aperture: ≥50 / ≤200μm.

[0078] This comparative example proposes a through-hole method for a glass substrate based on the above-mentioned demand indicators, comprising the following steps:

[0079] 1) Providing a glass substrate, which is made of alumina (60wt% SiO2, 15wt% Al2O3, 15wt% Na2O, 7wt% K2O), with the upper and lower surfaces of the substrate respectively named as surface A and surface B; setting the initial thickness of the glass substrate according to the specifications required by the project, the set thickness of the present embodiment is 0.5mm, and the measured thickness of the glass substrate used is 0.501-0.504mm.

[0080] 2) According to the pre-drawn drawings, the glass substrate is double-sided laser punched, and the spot aperture is controlled to 5μm.

[0081] 3) Immersing the substrate treated in step 2) in HF etching solution for etching, so that through holes of required specifications are formed at the laser-punched holes of the substrate. The HF etching solution used has an HF concentration of 5wt%, an etching temperature of 28°C, and an etching rate of 2.5μm / min.

[0082] Comparative Example 3

[0083] The required indicators are: substrate through-hole thickness: 0.5±0.02mm; inner / outer aperture: ≥50 / ≤200μm.

[0084] This comparative example proposes a through-hole method for a glass substrate based on the above-mentioned demand indicators, comprising the following steps:

[0085] 1) Providing a glass substrate, which is made of alumina (60wt% SiO2, 15wt% Al2O3, 15wt% Na2O, 7wt% K2O), with the upper and lower surfaces of the substrate respectively named as surface A and surface B; setting an initial thickness of the glass substrate according to the specifications required by the project, the set thickness of the present embodiment is 0.7 mm, and the measured thickness of the glass substrate used is 0.703-0.707 mm.

[0086] 2) According to the pre-drawn drawings, the glass substrate is double-sided laser punched, and the spot aperture is controlled to 5μm.

[0087] 3) Immerse the substrate processed in step 2) in HF etching solution for etching, so that a through hole of required specifications (controlled by the inner diameter of the hole) is formed at the laser-punched portion of the substrate. The HF etching solution used has an HF concentration of 5wt%, an etching temperature of 28°C, and an etching rate of 2.5μm / min.

[0088] Comparative Example 4

[0089] The required indicators are: substrate through-hole thickness: 0.5±0.02mm; inner / outer aperture: ≥50 / ≤200μm.

[0090] This comparative example proposes a through-hole method for a glass substrate based on the above-mentioned demand indicators, comprising the following steps:

[0091] 1) Providing a glass substrate, which is made of alumina (60wt% SiO2, 15wt% Al2O3, 15wt% Na2O, 7wt% K2O), with the upper and lower surfaces of the substrate respectively named as surface A and surface B; setting an initial thickness of the glass substrate according to the specifications required by the project, the set thickness of the present embodiment is 0.7 mm, and the measured thickness of the glass substrate used is 0.704-0.709 mm.

[0092] 2) According to the pre-drawn drawings, the glass substrate is double-sided laser punched, and the spot aperture is controlled to 5μm.

[0093] 3) Immerse the substrate processed in step 2) in HF etching solution for etching, so that through holes of required specifications (controlled by thickness) are formed at the laser-punched holes of the substrate. The HF etching solution used has an HF concentration of 5wt%, an etching temperature of 28°C, and an etching rate of 2.5μm / min.

[0094] Comparative Example 5

[0095] The required indicators are: substrate through-hole thickness: 0.5±0.02mm; inner / outer aperture: ≥50 / ≤200μm.

[0096] This comparative example proposes a through-hole method for a glass substrate based on the above-mentioned demand indicators, comprising the following steps:

[0097] 1) Providing a glass substrate, which is made of alumina (60wt% SiO2, 15wt% Al2O3, 15wt% Na2O, 7wt% K2O), with the upper and lower surfaces of the substrate respectively named as surface A and surface B; setting the initial thickness of the glass substrate according to the specifications required by the project, the set thickness of the present embodiment is 1.0 mm, and the measured thickness of the glass substrate used is 1.004-1.010 mm.

[0098] 2) According to the pre-drawn drawings, the glass substrate is double-sided laser punched.

[0099] 3) Immersing the substrate treated in step 2) in HF etching solution for etching, so that through holes of required specifications are formed at the laser-punched holes of the substrate. The HF etching solution used has an HF concentration of 5wt%, an etching temperature of 28°C, and an etching rate of 2.5μm / min.

[0100] Effect evaluation

[0101] The key preparation conditions and corresponding product conditions of Examples 1 to 2 and Comparative Examples 1 to 5 are summarized in the following table:

[0102]

[0103] It can be seen from the above table that the thickness, inner and outer diameters, and product appearance of Examples 1 to 2 of the present invention after through-holes all meet the standards. The thickness of Comparative Examples 1 to 3 after through-holes does not meet the standards, the through-hole effect of Comparative Example 4 does not meet the standards, and Comparative Example 5 increases the initial thickness to make the thickness after through-holes meet the standards but the outer diameter exceeds the standards. From the experimental comparison, it can be seen that the present invention has a better performance in controlling the through-hole thickness and product appearance.

[0104] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A method for forming a through hole in a glass substrate, characterized in that: The following steps are involved: a) magnetron sputtering the glass substrate on both sides to coat the acid-resistant protective layer to obtain a double-sided coated substrate; b) coating, exposing and developing the double-sided coated substrate with photoresist in sequence to form marks and preset holes, wherein the marks and preset holes formed on both sides of the substrate correspond to each other; c) stripping the substrate processed in step b) to remove the coating in the preset holes of the substrate by etching to reveal the glass substrate; Then, the photoresist remaining on the substrate surface is removed; d) performing double-sided laser drilling on the substrate with the glass substrate hole etched therein obtained in step c), wherein the drilling positions are located within the glass substrate hole; e) etching the substrate processed in step d) to form through holes of required specifications at the laser-punched holes of the substrate; f) stripping the substrate treated in step e) to remove the residual coating on the surface of the substrate.

2. The through-hole method according to claim 1, characterized in that: In step a), the acid-resistant protective layer comprises one or more of molybdenum, lead, nickel, chromium and copper.

3. The through-hole method according to claim 1, characterized in that: In step a), the coating thickness of the acid-resistant protective layer is 200 to 2000 nm.

4. The through-hole method according to claim 1, characterized in that: In step b), the diameter of the preset hole is 20-200 μm.

5. The through-hole method according to claim 1, characterized in that: In step b), the overlap error between the corresponding marks and the preset holes formed on the two side surfaces of the substrate is ≤10 μm.

6. The through-hole method according to claim 1, characterized in that: In step c), the stripping molding is performed by immersing the substrate treated in step b) in a plating etching solution, the immersion temperature is 25 to 30° C., and the immersion time is 1 to 20 minutes.

7. The through-hole method according to claim 1, characterized in that: In step c), the photoresist is removed by ultrasonic cleaning in a degumming solution.

8. The through-hole method according to claim 1, characterized in that: In step e), the etching method is to immerse the substrate processed in step d) in HF etching solution.

9. The through-hole method according to claim 8, characterized in that: In step e), the HF concentration of the HF etching solution is 5-30wt%, the immersion temperature is 26-35°C, and the etching rate is less than 3μm / min.

10. The through-hole method according to claim 1, characterized in that: In step f), the stripping and deplating is performed by immersing the substrate treated in step e) in a deplating solution, the immersion temperature is 30 to 45° C., and the immersion time is 10 to 30 minutes.

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