Method and device for processing deep groove through vacuum inversion

Abstract

The invention discloses a method and device for processing a deep groove through vacuum inversion, and the method comprises the following steps: placing a to-be-processed sample in a vacuum chamber, enabling the processing surface of the sample to be downwards suspended, and enabling the sample to be located below a laser emission mechanism; adjusting the focus of the laser beam of the laser emission mechanism to be on the processing surface of the sample; and the focus is controlled to be fed relative to the sample in the machining direction to machine the deep groove in the machining face of the sample. According to the invention, the sample is inversely arranged in the vacuum chamber, and the processing surface is suspended, so that the ablated substance in the groove can be discharged or gasified and sprayed out more quickly and smoothly, the ablating efficiency can be improved, the temperature of the ablated area in the groove can be quickly reduced, the ablating stability is improved, the bending phenomenon of the bottom surface of the deep groove is improved, and the channel quality is improved. Therefore, the method can be suitable for processing deep grooves with larger depth-to-width ratios; in addition, inverted machining is adopted, the ablated matter cannot pollute a machining window above the sample, and it is guaranteed that deep groove machining is continuously carried out.

Description

Technical Field

[0001] The present invention relates to the field of laser micro-nano processing technology, and in particular to a method and device for vacuum flip chip processing of deep grooves. Background Art

[0002] Diamond material has extremely high wear resistance, thermal conductivity, chemical stability, insulation and carrier mobility, and has the widest bandgap width of semiconductors. Diamond has good optical properties and is almost transparent in the ultraviolet, visible, infrared and microwave spectral regions. Based on a series of excellent properties, diamond is widely used in a series of industrial and scientific fields such as micro-electromechanical systems, optical components, and ultra-precision machining tools.

[0003] Processing diamond into high-quality deep grooves with periodic heat dissipation structures can improve the heat dissipation capacity of diamond. However, due to the high hardness and low plasticity of diamond, the traditional processing method is prone to damage such as microcracks, impurity particles and remelting layers on the surface and inside of the material, resulting in low efficiency and high loss, making it difficult to achieve the expected processing accuracy and surface roughness.

[0004] Diamond micro-nano processing has always been a difficult problem. At present, the processing methods of hard and brittle transparent materials mainly include mechanical processing and non-contact processing methods such as ion beam processing, photolithography, and laser processing. Among them, the mechanical processing represented by diamond turning has low precision, and the hard and brittle materials cause serious wear on the tool during processing; while ion beam processing and photolithography have high processing precision, but generally require expensive vacuum equipment, and it is difficult to prepare three-dimensional micro-nano structures.

[0005] Therefore, in recent years, the use of ultrafast lasers to process diamonds has become a research hotspot. Compared with the above-mentioned other methods, ultrafast laser processing, as a highly flexible and intelligent advanced processing technology, is one of the most advanced non-contact processing methods. Its characteristics include: no melting during the processing, more precise processing, high temporal and spatial resolution of processing, a wide range of processing materials, and low processing energy loss. Ultrafast laser micro-nano processing has been increasingly used in the field of diamond processing, especially in the field of deep groove processing, due to its high repeatability, high resolution and high-precision local material removal.

[0006] However, the current use of ultrafast lasers to process diamond deep grooves is only suitable for processing deep grooves with a depth-to-width ratio not exceeding 8:1, because it is difficult to control the quality of the processed grooves and the bottom of the grooves is prone to bending. Summary of the invention

[0007] The purpose of the present invention is to provide a method and device for vacuum flip chip processing of deep grooves to solve the technical problems of poor processing quality and low depth-to-width ratio in current ultrafast laser processing of diamond deep grooves.

[0008] The above-mentioned purpose of the present invention can be achieved by adopting the following technical solutions:

[0009] The present invention provides a method for vacuum flip-chip processing of deep grooves, comprising the following steps: placing a sample to be processed in a vacuum chamber, and suspending the processing surface of the sample downward, and the sample is located below a laser emitting mechanism; adjusting the focus of the laser beam of the laser emitting mechanism to be located on the processing surface of the sample; controlling the focus to feed along a processing direction relative to the sample to process a deep groove on the processing surface of the sample; wherein the processing direction includes a depth feeding direction opposite to the incident direction of the laser beam.

[0010] In an embodiment of the present invention, the sample is a diamond sample.

[0011] In an embodiment of the present invention, the processing direction also includes a length feed direction set along the length direction of the deep groove; the control of the focus to feed along the processing direction relative to the sample to process the deep groove on the processing surface of the sample includes the following steps: length feed: controlling the focus to move a preset feed length along the length feed direction relative to the sample; depth feed: controlling the focus to move a preset feed depth along the depth feed direction relative to the sample; alternately repeating the length feed step and the depth feed step until the depth of the deep groove is equal to the designed depth.

[0012] In an embodiment of the present invention, in the length feeding step, one end of the long side of the deep groove is used as a processing starting point, and the preset feeding length is equal to the designed length of the deep groove.

[0013] In an embodiment of the present invention, the air pressure of the vacuum chamber is 3Pa-5Pa.

[0014] In an embodiment of the present invention, the laser beam is a femtosecond laser, the wavelength of the laser beam is 1030 nm, the pulse width of the laser beam is 900 fs, and the repetition frequency of the laser beam is 5 kHz to 100 kHz.

[0015] The present invention also provides a device for vacuum flip-chip processing of deep grooves, which is used to implement the above method. The device includes: a processing box, whose inner cavity can be connected to a vacuum pumping device to form a vacuum chamber, and a suspended mounting structure is provided in the vacuum chamber; wherein the suspended mounting structure is used to mount the sample to be processed in the vacuum chamber and to make the processing surface of the sample face downward and suspended; a laser emitting mechanism, which is located above the sample, and the laser beam of the laser emitting mechanism can form a focus in the vacuum chamber, and the focus can move relative to the sample to adjust the relative position of the focus and the sample.

[0016] In an embodiment of the present invention, the suspended mounting structure includes a suspended stage, a table top of the suspended stage is provided with a receiving cavity, the sample is placed on the table top of the suspended stage, and the processed surface of the sample is arranged toward the receiving cavity.

[0017] In an embodiment of the present invention, a processing window is provided on the top of the processing box, and the processing window is located above the sample; the laser emitting mechanism is located above the processing box, and the laser beam is emitted into the vacuum chamber through the processing window and forms the focus.

[0018] In an embodiment of the present invention, the focus can be moved relative to the sample in the depth direction and the length direction of the deep groove to be processed.

[0019] In an embodiment of the present invention, the laser emitting mechanism is movably arranged along the depth direction via a lifting platform, so that the focus of the laser beam can move along the depth direction.

[0020] In an embodiment of the present invention, the laser emitting mechanism includes a laser, a beam expander, a half wave plate, a first reflector, a second reflector, a scanning galvanometer and a focusing lens. The scanning galvanometer and the focusing lens are arranged in sequence above the sample according to the propagation direction of the light beam. The laser beam emitted by the laser is transmitted to the first reflector through the beam expander and the half wave plate. The laser beam is reflected by the first reflector, the second reflector and the scanning galvanometer in sequence and then passes through the focusing lens to form the focus. The scanning galvanometer can move the focus of the laser beam along the length direction.

[0021] The characteristics and advantages of the present invention are:

[0022] The method and device for vacuum flip-chip processing of deep grooves of the present invention, by flipping the sample to be processed in a vacuum chamber and leaving the processing surface of the sample suspended in the air, during the laser processing of the deep groove, on the one hand, due to the increase in the pressure difference between the inside and outside of the groove, on the other hand, due to the influence of gravity, the ablated material in the groove can be discharged or vaporized and ejected more quickly and smoothly, thereby improving the ablation efficiency and rapidly reducing the temperature of the ablated area in the groove to ensure that the laser beam can act on a relatively stable solid phase material during further processing, further improving the ablation stability, thereby improving the bending phenomenon of the bottom surface of the deep groove, improving the groove quality, and being suitable for deep groove processing with a larger aspect ratio; in addition, since the ablated material in the groove is discharged to the suspended area below the sample, it will not affect the laser emitting mechanism above the sample, thereby ensuring the continuous progress of the deep groove processing. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0024] Figure 1 It is a schematic flow chart of the method for vacuum flip chip processing of deep grooves in the present invention.

[0025] Figure 2 It is a specific flow chart of the deep groove processing steps in the present invention.

[0026] Figure 3 It is a schematic diagram of the appearance of the device for vacuum flip chip processing of deep grooves in the present invention.

[0027] Figure 4 It is a schematic diagram of the interior of the device for vacuum flip chip processing of deep grooves in the present invention.

[0028] In the figure:

[0029] 1. Processing box; 11. Vacuum chamber; 12. Suspended mounting structure; 121. Suspended stage; 122. Accommodating chamber; 13. Processing window;

[0030] 2. Laser emitting mechanism; 21. Laser; 22. Beam expander; 23. Half wave plate; 24. First reflector; 25. Second reflector; 26. Scanning galvanometer; 27. Focusing lens;

[0031] 3. Vacuum extraction device;

[0032] 4. Sample; 41. Processing surface. DETAILED DESCRIPTION

[0033] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0034] Implementation Method 1

[0035] Combination Figure 1 , Figure 3 and Figure 4As shown, the present invention provides a method for vacuum flip-chip processing of deep grooves, comprising the following steps: S1, placing a sample 4 to be processed in a vacuum chamber 11, and suspending the processing surface 41 of the sample 4 downward, and the sample 4 is located below a laser emitting mechanism 2; S2, adjusting the focus of the laser beam of the laser emitting mechanism 2 to be on the processing surface 41 of the sample 4; S3, controlling the focus to feed along the processing direction relative to the sample 4 to process a deep groove on the processing surface 41 of the sample 4; wherein the processing direction includes a depth feed direction S1 opposite to the incident direction of the laser beam.

[0036] The vacuum flip-chip processing method of the present invention is to flip the sample 4 to be processed in the vacuum chamber 11, and make the processing surface 41 of the sample 4 suspended, so as to use the focus of the laser beam to process the deep groove from the processing surface 41 from bottom to top. In the process of laser processing the deep groove, on the one hand, due to the increase in the pressure difference between the inside and outside of the groove, on the other hand, due to the influence of gravity, the ablated material in the groove can be discharged or gasified and ejected more quickly and smoothly, thereby improving the ablation efficiency and rapidly reducing the temperature of the ablated area in the groove to ensure that the laser beam can act on the relatively stable solid phase material during further processing, further improving the ablation stability, thereby improving the bending phenomenon of the bottom surface of the deep groove, improving the groove quality, and being suitable for deep groove processing with a larger aspect ratio. In addition, since the ablated material in the groove is discharged to the suspended area below the sample 4, it will not affect the laser emitting mechanism 2 above the sample 4, ensuring the continuous processing of the deep groove.

[0037] Among them, since the distribution range of plasma in the vacuum chamber 11 is larger, the cooling speed is faster, and the plasma ejected from the groove is not hindered by gas, so that the plasma and the ejected materials are more likely to expand out of the groove under the constraint of the deep groove. Since the expansion is faster, the temperature also decreases faster. Therefore, the material that has not been ablated at the bottom of the groove is quickly cooled and solidified to ensure that the laser beam can act on a relatively stable solid phase material when the groove is further processed, which greatly reduces unstable phases such as residues, thereby further improving the ablation stability.

[0038] Therefore, the vacuum flip chip deep groove processing method of the present invention is particularly suitable for deep groove processing of materials with high hardness and high melting point (such as diamond). For example, in the embodiment of the present invention, the sample 4 is a diamond sample, and the method of the present invention can be used to process a deep groove with a depth-to-width ratio greater than 20:1 on the processing surface 41 of the diamond sample 4. It should be noted that the method of the present invention can also produce the above-mentioned beneficial effects when applied to deep groove processing of other materials.

[0039] Specifically, Figure 4As shown, the processing surface 41 of the sample 4 is equivalent to the area on the lower surface of the sample 4 where the deep groove needs to be processed. The deep groove generally presents a groove structure with a small groove opening and a large groove depth. The deep groove has a depth direction S and a length direction X, wherein the depth direction S is the groove depth direction perpendicular to the processing surface 41, including the direction S1 from bottom to top (i.e., the depth feed direction) and the direction S2 from top to bottom (i.e., the incident direction of the laser beam); the length direction X is the extension direction of the long side of the groove opening, including the direction X1 from left to right and the direction X2 from right to left. When the design length of the deep groove is narrow, only the depth feed can be performed, that is, the focus is only processed along the depth feed direction S1; and when the design length of the deep groove is long, horizontal feed is also required, that is, the processing direction also includes the length feed direction set along the length direction X of the deep groove, wherein the horizontal feed direction can be the direction X1 or the direction X2.

[0040] The air pressure of the vacuum chamber 11 is 3Pa~5Pa. An air pressure detection device can be set to detect whether the air pressure of the vacuum chamber 11 meets the requirements. If not, the vacuum chamber 11 is connected to the vacuum pumping device 3 for adjustment; wherein, the air pressure detection device includes but is not limited to a resistance gauge, and the vacuum pumping device 3 includes but is not limited to a mechanical pump or a vacuum pump, etc.

[0041] like Figure 4 As shown, the focus of the laser beam is the area with the most concentrated energy and the highest energy density in the laser beam, so it has the highest processing efficiency and is also beneficial to improve the processing accuracy. The laser beam is a femtosecond laser, the wavelength of the laser beam is 1030nm, the pulse width of the laser beam is 900fs, and the repetition frequency of the laser beam is 5kHz to 100kHz. In addition, the laser power of the laser emitting mechanism 2 is 5W to 60W, and the single pulse energy of the laser beam can reach up to 200uJ. Since the pulse width of the laser beam is small and the energy of a single pulse is high, the continuous processing time in the same area of ​​sample 4 is short, thereby reducing the influence of thermal effects, which is suitable for processing high hardness and high melting point materials.

[0042] Combination Figure 2 and Figure 4As shown, in order to further improve the discharge efficiency of the ablated material, further improve the bending phenomenon of the bottom surface of the groove, and improve the quality of the groove, in the embodiment of the present invention, the focus is controlled to move along the processing direction from the processing surface 41 of the sample 4 to process the deep groove, including the following steps: S31, length feeding: control the focus to move a preset feeding length along the length feeding direction (i.e., direction X1 or direction X2) relative to the sample 4; S32, depth feeding: control the focus to move a preset feeding depth along the depth feeding direction S1 relative to the sample 4; S33, alternately repeat the length feeding step and the depth feeding step until the depth of the deep groove is equal to the designed depth. In other words, it is equivalent to processing layer by layer from the bottom to the top from the processing surface 41 of the sample 4, so that the depth of the groove structure is gradually deepened until the depth of the groove structure is equal to the designed depth, that is, the desired deep groove is processed.

[0043] Specifically, the sample 4 is set horizontally, that is, the processing surface 41 of the sample 4 is horizontally facing downward, which is more conducive to the downward discharge of the ablated material in the groove. Therefore, the depth direction S of the deep groove is the vertical direction, and the length direction X of the deep groove is a horizontal direction. The relative movement of the focus and the sample 4 in the length direction X and the depth direction S is preferably to fix the sample 4 and only move the focus. For example, in the embodiment of the present invention, the sample 4 is fixedly installed in the vacuum chamber 11; the laser emitting mechanism 2 is installed on a lifting platform, so that the laser emitting mechanism 2 is driven to move upward by the lifting platform, so that the focus of the laser beam is also synchronously moved upward, thereby achieving depth feeding; in addition, the laser emitting mechanism 2 moves the laser beam horizontally by deflecting the scanning galvanometer 26, so that the focus of the laser beam is also synchronously translated, thereby achieving length feeding. Of course, the sample 4 and the focus can also be moved, and the focus can also be fixed and only the sample 4 can be moved.

[0044] Among them, the preset feed length is not specifically limited and is related to the processing starting point of the length feed; the preset feed depth is not specifically limited and can be adjusted as needed. For example, in a specific embodiment of the present invention, sample 4 is a single crystal diamond sample 4, which is generally a rectangular block structure with a length, width and height of 4mm*4mm*1.5mm, a designed depth of the deep groove of 1.3mm, a designed length of the deep groove of 3mm, and a designed width of the deep groove of 50um. In the length feed step, one end of the long side of the deep groove is used as the processing starting point, and the preset feed length is equal to the designed length of the deep groove. In the depth feed step, the speed at which the laser beam moves relative to the sample 4 along the depth feed direction S1 is 0.002um / s.

[0045] After the deep groove processing is completed, the sample 4 is taken out and placed in an alcohol solution for ultrasonic cleaning for 6 minutes. Then, the sample 4 is characterized to determine the depth-to-width ratio of the processed deep groove.

[0046] Implementation Method 2

[0047] In order to better implement the above method, the present invention also provides a device for vacuum flip-chip processing of deep grooves, including: a processing box 1, whose inner cavity can be connected to a vacuum pumping device 3 to form a vacuum chamber 11, and a suspended mounting structure 12 is provided in the vacuum chamber 11; wherein the suspended mounting structure 12 is used to install the sample 4 to be processed in the vacuum chamber 11 and to make the processing surface 41 of the sample 4 suspended downward; a laser emitting mechanism 2, which is located above the sample 4, and the laser beam of the laser emitting mechanism 2 forms a focus in the vacuum chamber 11, and the focus can move relative to the sample 4 to adjust the relative position of the focus and the sample 4.

[0048] In some embodiments of the present invention, the suspended mounting structure 12 includes a suspended stage 121, the table top of the suspended stage 121 is provided with a receiving cavity 122, the sample 4 is placed on the table top of the suspended stage 121, and the processed surface 41 of the sample 4 is arranged toward the receiving cavity 122. The ablated product generated by laser processing on the processed surface 41 of the sample 4 can be quickly discharged into the receiving cavity 122.

[0049] Specifically, the suspended stage 121 forms a receiving cavity 122 by opening a through hole. The suspended stage 121 can be clamped and fixed on a mounting frame, and the receiving cavity 122 of the suspended stage 121 can be connected to the hollow area of ​​the mounting frame, so that the ablated material is discharged from the receiving cavity 122 to the hollow area of ​​the mounting frame. In addition, a limit groove, a clamping and fixing structure or other structures can be provided on the suspended stage 121 to fix the sample 4 to prevent the sample 4 from moving during the processing, which is beneficial to improving the processing quality. In some other embodiments of the present invention, the suspended mounting structure 12 can also suspend the sample 4 in the vacuum chamber 11 only by a clamping and fixing structure or a suspension member.

[0050] In some embodiments of the present invention, a processing window 13 is provided on the top of the processing box 1, and the processing window 13 is located above the sample 4; the laser emitting mechanism 2 is located above the processing box 1, and the laser beam is emitted into the vacuum chamber 11 through the processing window 13 and forms a focus, that is, the laser emitting mechanism 2 is located outside the processing box 1, which prevents the laser emitting mechanism 2 from being contaminated, and the installation is simpler. The volume of the vacuum chamber 11 is small, which is convenient for vacuuming. In addition, since the ablated material in the groove is discharged downward, it will not contaminate the processing window 13. In other embodiments of the present invention, the laser emitting mechanism 2 can also be arranged in the vacuum chamber 11.

[0051] In an embodiment of the present invention, the focus can be moved relative to the sample in the depth direction S and the length direction X of the deep groove to be processed. In an embodiment of the present invention, the processing surface 41 of the sample 4 is horizontally downward, so the depth direction S of the deep groove is a vertical direction, and the length direction X of the deep groove is a horizontal direction, that is, the focus can move up and down in the vertical direction relative to the sample, and can also move left and right in the horizontal direction. Before processing, the focus moves relative to the sample 4 in the depth direction S to adjust the focus to the processing surface 41 of the sample 4. During the processing, the focus moves up in the depth direction S and moves in the length direction X relative to the sample 4 to process a deep groove on the processing surface 41, so that the depth of the deep groove is equal to the designed depth, and the length of the deep groove is equal to the designed length.

[0052] In some embodiments of the present invention, the laser emitting mechanism 2 is movably arranged along the depth direction S through a lifting platform, so that the focus of the laser beam can move along the depth direction S. Specifically, the focus of the laser beam moves up from the processing surface 41 of the sample 4 along the depth direction S to achieve depth feeding. The laser emitting mechanism 2 includes a laser 21, a beam expander 22, a half-wave plate 23, a first reflector 24, a second reflector 25, a scanning galvanometer 26 and a focusing lens 27. The scanning galvanometer 26 and the focusing lens 27 are arranged directly above the sample 4 according to the propagation direction of the light beam. The laser beam emitted by the laser 21 is transmitted to the first reflector 24 through the beam expander 22 and the half-wave plate 23. The laser beam is reflected by the first reflector 24, the second reflector 25 and the scanning galvanometer 26 in turn, and then passes through the focusing lens 27 to form a focus. The scanning galvanometer 26 can move the focus of the laser beam along the length direction X.

[0053] Among them, the laser 21 is used to generate an infrared laser beam with a pulse width of 300fs and a wavelength of 1030nm; the beam expander is used to expand the diameter of the laser beam and reduce the divergence angle of the laser beam; the half wave plate 23 is used to generate a phase difference of π and change the polarization direction of the polarized light; the first reflector 24 and the second reflector 25 are used to change the direction of the optical path; the scanning galvanometer 26 is used to perform rapid horizontal scanning processing of the laser beam; and the focusing lens 27 is used to focus the laser beam to form a focus. The specific structure and working principle involved in the horizontal scanning of the scanning galvanometer 26 are the same as those in the prior art and are not described in detail here.

[0054] In other embodiments of the present invention, both the sample 4 and the focus are movable. In other embodiments of the present invention, the focus is fixed and only the sample 4 is movable. For example, the sample 4 is movably arranged in the vacuum chamber 11, or the processing box 1 is installed on a moving platform, and the processing box 1 is driven by the moving platform to move so that the sample 4 moves synchronously, and the laser emitting mechanism 2 is fixed.

[0055] The above are only several embodiments of the present invention. Those skilled in the art may make various changes or modifications to the embodiments of the present invention based on the contents disclosed in the application documents without departing from the spirit and scope of the present invention.

Claims

1. A method for vacuum flip chip processing of deep grooves, characterized in that: The following steps are involved: Placing a sample to be processed in a vacuum chamber, and suspending the sample with the processing surface facing downward, with the sample located below the laser emitting mechanism; Adjusting the focus of the laser beam of the laser emitting mechanism to be on the processing surface of the sample; The focus is controlled to advance along a processing direction relative to the sample to form a deep groove on a processing surface of the sample; wherein the processing direction includes a depth feeding direction opposite to an incident direction of the laser beam.

2. The method for vacuum flip chip processing of deep grooves according to claim 1, characterized in that: The sample is a diamond sample.

3. The method for vacuum flip chip processing of deep grooves according to claim 1, characterized in that: The processing direction also includes a length feeding direction set along the length direction of the deep groove; the control of the focus relative to the sample along the processing direction to process the deep groove on the processing surface of the sample includes the following steps Length feeding: controlling the focus to move a preset feeding length along the length feeding direction relative to the sample; Depth feeding: controlling the focus to move relative to the sample along the depth feeding direction to a preset feeding depth; The length feeding step and the depth feeding step are repeated alternately until the depth of the deep groove is equal to the designed depth.

4. The method for vacuum flip chip processing of deep grooves according to claim 3, characterized in that: In the length feeding step, one end of the long side of the deep groove is used as the processing starting point, and the preset feeding length is equal to the designed length of the deep groove.

5. The method for vacuum flip chip processing of deep grooves according to claim 1, characterized in that: The air pressure of the vacuum chamber is 3Pa-5Pa.

6. The method for vacuum flip chip processing of deep grooves according to claim 1, characterized in that: The laser beam is a femtosecond laser, the wavelength of the laser beam is 1030nm, the pulse width of the laser beam is 900fs, and the repetition frequency of the laser beam is 5kHz-100kHz.

7. A vacuum flip chip processing deep groove device, characterized in that: For implementing the method according to any one of claims 1 to 6, the device comprises: A processing box, the inner cavity of which can be connected to a vacuum pump to form a vacuum chamber, wherein a suspended mounting structure is provided in the vacuum chamber; wherein the suspended mounting structure is used to mount the sample to be processed in the vacuum chamber and to suspend the sample with the processing surface facing downward; The laser emitting mechanism is located above the sample. The laser beam of the laser emitting mechanism can form a focus in the vacuum chamber, and the focus can be moved relative to the sample to adjust the relative position of the focus and the sample.

8. The vacuum flip chip processing deep groove device according to claim 7, characterized in that: The suspended installation structure comprises a suspended stage, a table top of the suspended stage is provided with a receiving cavity, the sample is placed on the table top of the suspended stage, and the processed surface of the sample is arranged toward the receiving cavity.

9. The vacuum flip chip processing deep groove device according to claim 7, characterized in that: A processing window is provided on the top of the processing box, and the processing window is located above the sample; the laser emitting mechanism is located above the processing box, and the laser beam is emitted into the vacuum chamber through the processing window and forms the focus.

10. The vacuum flip chip processing deep groove device according to claim 7, characterized in that: The focus can be movably arranged relative to the sample in the depth direction and the length direction of the deep groove to be processed.

11. The vacuum flip chip processing deep groove device according to claim 10, characterized in that: The laser emitting mechanism is movably arranged along the depth direction via a lifting platform, so that the focus of the laser beam can move along the depth direction.

12. The vacuum flip chip processing deep groove device according to claim 10, characterized in that: The laser emitting mechanism includes a laser, a beam expander, a half-wave plate, a first reflector, a second reflector, a scanning galvanometer and a focusing lens. The scanning galvanometer and the focusing lens are arranged in sequence above the sample according to the propagation direction of the light beam. The laser beam emitted by the laser is transmitted to the first reflector through the beam expander and the half-wave plate. The laser beam is reflected by the first reflector, the second reflector and the scanning galvanometer in sequence and then passes through the focusing lens to form the focus. The scanning galvanometer can move the focus of the laser beam along the length direction.

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