Process chamber and thin film deposition equipment

Abstract

The invention provides a process chamber which comprises the components of a heating disc which is used for bearing a to-be-processed wafer and performing a thin film deposition process on the to-be-processed wafer; the first lining comprises a lap joint part and a first bending part, the lap joint part is in lap joint with the edge of the heating disc, the first bending part is located on the periphery of the lap joint part, and the outer end of the first bending part extends into a second bending part of a second lining; the first lining comprises a first bending part, the second lining comprises a second bending part, the inner end of the second bending part extends into the first bending part to form an air channel, and at least one limiting part is arranged at the outer end of the first bending part and / or the inner end of the second bending part to stabilize the air channel.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a process chamber and a thin film deposition device. Background Art

[0002] In the thin film deposition process, the gas flow direction is an important factor affecting the uniformity and parameters of the thin film. In the prior art, L-shaped and U-shaped bushings are designed to address the deposition problem on the back of the heating plate. These bushing structures can guide the purge gas to flow through, effectively preventing unnecessary thin film deposition on the back of the heating plate. This design can theoretically provide a stable gas flow, thereby maintaining the consistency of thin film deposition.

[0003] In the actual process, especially the high pressure gas inlet characteristics of the atomic layer deposition process, there will be some momentary unstable gas flow. This situation is easy to cause the relative displacement of the heating plate and the bushing, thus affecting the gas flow direction and flow of the bottom purge, reducing the completion of the film back purge process, and seriously affecting the uniformity of film deposition.

[0004] In order to overcome the above-mentioned defects of the prior art, there is an urgent need in the art for a process chamber for avoiding relative displacement of the liner, thereby stabilizing the flow direction and flow rate of the bottom purge gas to improve the uniformity of thin film deposition. Summary of the invention

[0005] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or decisive elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0006] In the actual process, especially the high pressure gas inlet characteristics of the atomic layer deposition process, there will be some momentary unstable gas flow. This situation is easy to cause the relative displacement of the heating plate and the bushing, thus affecting the gas flow direction and flow of the bottom purge, reducing the completion of the film back purge process, and seriously affecting the uniformity of film deposition.

[0007] In order to overcome the above-mentioned defects in the prior art, the present invention provides a process chamber and a thin film deposition device for avoiding relative displacement of the liner, thereby stabilizing the flow direction and flow rate of the bottom purge gas to improve the uniformity of thin film deposition.

[0008] Specifically, the process chamber provided according to the first aspect of the present invention includes: a heating plate, used to carry the wafer to be processed and perform a thin film deposition process on it; a first sleeve, including an overlapping portion and a first bending portion, wherein the overlapping portion overlaps the edge of the heating plate, and the first bending portion is located at the periphery of the overlapping portion, and its outer end extends into the second bending portion of the second sleeve; and the second sleeve, including the second bending portion, wherein the inner end of the second bending portion extends into the first bending portion to form an air path, and the outer end of the first bending portion and / or the inner end of the second bending portion are provided with at least one limiting portion to stabilize the air path.

[0009] Furthermore, in some embodiments of the present invention, at least one of the edge of the heating plate and the overlapping portion is provided with a recessed portion, and the other one is provided with a raised portion, and the recessed portion and the raised portion cooperate to firmly overlap the heating plate and the first sleeve.

[0010] Furthermore, in some embodiments of the present invention, the protrusion is spherical, and the recess is spherical, and the spherical recess cooperates with the spherical protrusion to firmly overlap the heating plate and the first sleeve.

[0011] Furthermore, in some embodiments of the present invention, the raised portion is a strip-shaped flange extending along the circumference of the heating plate and the first sleeve, and the recessed portion is a groove-shaped recess extending along the circumference, and the groove-shaped recess cooperates with the strip-shaped flange to firmly overlap the first sleeve and the heating plate.

[0012] Furthermore, in some embodiments of the present invention, the limiting portion includes a branch structure and / or a spherical structure.

[0013] Furthermore, in some embodiments of the present invention, the limiting portion includes a Y-shaped branch structure, and a protruding spherical structure is provided at the end of the Y-shaped branch structure.

[0014] Further, in some embodiments of the present invention, the process chamber includes a plurality of the first bushings and / or a plurality of the second bushings, wherein each of the first bushings and / or each of the second bushings has a plurality of different sizes of the limiting portions and are respectively installed in the process chamber one by one, or the limiting portions are detachably connected to the outer end of the first bending portion and / or the inner end of the second bending portion, wherein the first bushing and / or the second bushing are respectively configured with a plurality of different sizes of limiting portions.

[0015] Further, in some embodiments of the present invention, the first bushing includes a plurality of the limiting portions, wherein the limiting portions are uniformly distributed along the circumference of the first bushing, and / or the second bushing includes a plurality of the limiting portions, wherein the limiting portions are uniformly distributed along the circumference of the second bushing.

[0016] Furthermore, in some embodiments of the present invention, the process chamber also includes: a deposition gas source, used to spray reaction gas above the heating disk to perform the thin film deposition process; and a purge gas source, used at least to provide purge gas to the edge of the heating disk through the gas path while spraying the reaction gas, so as to inhibit the deposition of the process gas on the edge of the heating disk.

[0017] In addition, the thin film deposition equipment provided according to the second aspect of the present invention includes at least one process chamber as described in any one of the first aspect of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0019] Figure 1 A schematic structural diagram of a process chamber provided according to some embodiments of the present invention is shown.

[0020] Figure 2 A schematic structural diagram of a spherical limiting portion provided according to some embodiments of the present invention is shown.

[0021] Figure 3 A schematic structural diagram of a process chamber after displacement according to some embodiments of the present invention is shown.

[0022] Figure 4A to Figure 4B A schematic structural diagram of a plurality of position limiting parts provided according to some embodiments of the present invention is shown.

[0023] Figure 5A to Figure 5B A schematic diagram of gas flow direction in a process chamber provided according to some embodiments of the present invention is shown.

[0024] Figure 6A to Figure 6B A schematic diagram showing the flow direction of gas at a liner in a process chamber according to some embodiments of the present invention is shown.

[0025] Reference numerals:

[0026] 10 Heating plate

[0027] 101 Depression

[0028] 20 First bushing

[0029] 21 Overlap

[0030] 211 raised part

[0031] 22 First bending part

[0032] 30 Second bushing

[0033] 31 Second bending portion

[0034] 32 Limiting part

[0035] 40 Deposition gas route

[0036] 50 Purge gas route DETAILED DESCRIPTION

[0037] The following specific embodiments illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this implementation. On the contrary, the purpose of introducing the invention in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0038] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0039] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0040] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as a second component, region, layer and / or part without departing from some embodiments of the present invention.

[0041] As mentioned above, in the thin film deposition process, the flow direction of the gas is an important factor affecting the uniformity and parameters of the thin film. In the prior art, L-shaped and U-shaped bushings are designed to address the deposition problem on the back of the heating plate. These bushing structures can guide the purge gas to flow through, effectively preventing unnecessary film deposition on the back of the heating plate. This design can theoretically provide a stable gas flow, thereby maintaining the consistency of thin film deposition. However, in the actual process, especially the characteristics of high-pressure air intake in the atomic layer deposition process, there will be some moments of unstable gas flow. This situation is more likely to cause relative displacement of the heating plate and the bushing, thereby affecting the gas flow direction and flow of the bottom purge, reducing the completion of the film back purge process, and seriously affecting the uniformity of thin film deposition.

[0042] In order to overcome the above-mentioned defects in the prior art, the present invention provides a process chamber and a thin film deposition device for avoiding relative displacement of the liner, thereby stabilizing the flow direction and flow rate of the bottom purge gas to improve the uniformity of thin film deposition.

[0043] In some non-limiting embodiments, the process chamber provided in the first aspect of the present invention can be configured in the thin film deposition device provided in the second aspect of the present invention. The thin film deposition device includes at least one process chamber as described in any one of the first aspect of the present invention.

[0044] Please refer to Figure 1 , Figure 1 A schematic structural diagram of a process chamber provided according to some embodiments of the present invention is shown.

[0045] like Figure 1 As shown, the process chamber includes a heating plate 10 , a first liner 20 and a second liner 30 .

[0046] The heating plate 10 is used to carry the wafer to be processed and perform a thin film deposition process on it.

[0047] The first bushing 20 includes an overlap portion 21 and a first bent portion 22. The overlap portion 21 overlaps the edge of the heating plate 10, and the first bent portion 22 is located at the periphery of the overlap portion 21, and its outer end extends into the second bent portion 31 of the second bushing 30.

[0048] The second bushing 30 includes a second bending portion 31, wherein the inner end of the second bending portion 31 extends into the first bending portion 22 to form an air path, and the outer end of the first bending portion 22 and / or the inner end of the second bending portion 31 are provided with at least one limiting portion 32 to stabilize the air path, thereby avoiding relative displacement of the bushing.

[0049] In some embodiments, at least one of the edge of the heating plate 10 and the overlapping portion 21 is provided with a recessed portion 101 , and the other one is provided with a raised portion 211 , and the recessed portion 101 and the raised portion 211 cooperate to firmly overlap the heating plate 10 and the first sleeve 20 .

[0050] Further, the protrusion 211 is spherical, the recess 101 is spherical, and the spherical recess 101 cooperates with the spherical protrusion 211 to firmly overlap the heating plate 10 and the first bushing 20. Optionally, the protrusion 211 can also be gripper-shaped, and the recess 101 cooperates with the gripper-shaped protrusion 211 to firmly overlap the heating plate 10 and the first bushing 20.

[0051] Optionally, the raised portion 211 is a strip-shaped flange extending circumferentially between the heating plate 10 and the first bushing 20 , and the recessed portion 101 is a groove-shaped recess extending circumferentially, and the groove-shaped recess cooperates with the strip-shaped flange to firmly overlap the first bushing 20 and the heating plate 10 .

[0052] Please refer to Figure 1 and Figure 2 , Figure 2 A schematic structural diagram of a spherical limiting portion provided according to some embodiments of the present invention is shown.

[0053] like Figure 1 and Figure 2 As shown, the limiting portion 32 may include a branch structure and / or a spherical structure.

[0054] Furthermore, the limiting portion 32 includes a Y-shaped branch structure, and a protruding spherical structure is provided at the end of the Y-shaped branch structure.

[0055] Optionally, the Y-shaped branch structure is only a preferred structure of the limiting portion 32. Those skilled in the art may also set other structures and quantities according to actual needs to achieve positioning.

[0056] The process chamber includes a plurality of first bushings 20 and / or a plurality of second bushings 30. Each first bushing 20 and / or each second bushing 30 has a plurality of stopper portions 32 of different sizes, and each is selectively installed in the process chamber.

[0057] In some embodiments, the stopper 32 is detachably connected to the outer end of the first bending portion 22 and / or the inner end of the second bending portion 31. The first bushing 20 and / or the second bushing 30 are respectively configured with stoppers 32 of various sizes.

[0058] Please refer to Figure 3 , Figure 3 A schematic structural diagram of a process chamber after displacement according to some embodiments of the present invention is shown.

[0059] like Figure 3 As shown, even if there is displacement, the limiting effect of the limiting portion 32 can achieve relative stability between the position of the first bushing 20 and / or each second bushing 30 and the gas flow direction, prevent unilateral blockage, reduce undesirable deposition on the back of the heating plate 10, and improve the uniformity of thin film deposition.

[0060] Please refer to Figure 4A to Figure 4B , Figure 4A to Figure 4B A schematic structural diagram of a plurality of position limiting parts provided according to some embodiments of the present invention is shown.

[0061] like Figure 4A to Figure 4B As shown, the first bushing 20 may include a plurality of stoppers 32. The stoppers 32 may be evenly distributed along the circumference of the first bushing 20 to maintain the stability of the structure.

[0062] Accordingly, the second bushing 30 may also include a plurality of limiting portions 32. The limiting portions 32 may be evenly distributed along the circumference of the second bushing 30 to maintain the stability of the structure.

[0063] For example, there may be three limiting portions 32 , which may be distributed along the edge of the first bushing 20 and / or the second bushing 30 in the form of an equilateral triangle.

[0064] For another example, there may be four limiting portions 32 , which may be distributed in a square shape along the edge of the first bushing 20 and / or the second bushing 30 .

[0065] In addition, the process chamber in the first aspect of the present invention may further include a deposition gas source and a purge gas source. The deposition gas source is used to spray the reaction gas above the heating disk 10 to perform a thin film deposition process. The purge gas source is used to at least provide the purge gas to the edge of the heating disk 10 through the gas path while spraying the reaction gas to suppress the deposition of the process gas on the edge of the heating disk 10.

[0066] Please refer to Figure 5A to Figure 5B , Figure 5A to Figure 5B A schematic diagram of gas flow direction in a process chamber provided according to some embodiments of the present invention is shown.

[0067] like Figure 5A to Figure 5B As shown, the deposition gas route 40 is sprayed into the process chamber via the shower plate and is extracted from both sides of the process chamber via the exhaust pump. In the purge gas route 50, the purge gas is blown from top to bottom to prevent the heating plate 10 from falling off.

[0068] Please refer to Figure 6A to Figure 6B , Figure 6A to Figure 6B A schematic diagram showing the flow direction of gas at a liner in a process chamber according to some embodiments of the present invention is shown.

[0069] like Figure 6A to Figure 6B As shown, the path of the labyrinth-shaped channel is long and the resistance is large. When the purge gas passes through the labyrinth-shaped channel, it can prevent the reaction gas from entering the back of the heating plate 10 to cause deposition, thereby reducing the loss of the reaction gas. In addition, the purge gas passing through the labyrinth-shaped channel helps to guide the reaction gas path to be more biased to both sides, and finally is pumped away by the pump, reducing its deposition on the inner wall of the chamber and reducing its deposition at the edge of the wafer, so as to avoid excessive deposition of the film at the edge of the wafer.

[0070] In summary, the process chamber and thin film deposition equipment provided by the present invention can be used to avoid relative displacement of the liner, thereby stabilizing the flow direction and flow rate of the bottom purge gas to improve the uniformity of thin film deposition.

[0071] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art.

[0072] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A process chamber, characterized in that: include: A heating plate, used to carry the wafer to be processed and perform a thin film deposition process on it; A first bushing, comprising an overlapping portion and a first bent portion, wherein the overlapping portion overlaps the edge of the heating plate, the first bent portion is located at the periphery of the overlapping portion, and an outer end of the first bent portion extends into a second bent portion of a second bushing; and The second bushing includes the second bent portion, wherein the inner end of the second bent portion extends into the first bent portion to form an air path, and the outer end of the first bent portion and / or the inner end of the second bent portion are provided with at least one limiting portion to stabilize the air path.

2. The process chamber according to claim 1, characterized in that: At least one of the edge of the heating plate and the overlapping portion is provided with a recessed portion, and the other one is provided with a raised portion, and the recessed portion and the raised portion cooperate to firmly overlap the heating plate and the first bushing.

3. The process chamber according to claim 2, characterized in that: The protrusion is spherical, and the recess is spherical. The spherical recess cooperates with the spherical protrusion to firmly overlap the heating plate and the first bushing.

4. The process chamber according to claim 2, characterized in that: The raised portion is a strip-shaped flange extending along the circumference of the heating plate and the first bushing, and the recessed portion is a groove-shaped recess extending along the circumference. The groove-shaped recess cooperates with the strip-shaped flange to firmly overlap the first bushing and the heating plate.

5. The process chamber according to claim 1, wherein: The limiting portion includes a branch structure and / or a spherical structure.

6. The process chamber according to claim 5, characterized in that: The limiting portion comprises a Y-shaped branch structure, and a protruding spherical structure is provided at the end of the Y-shaped branch structure.

7. The process chamber according to claim 1, characterized in that: The process chamber comprises a plurality of the first bushings and / or a plurality of the second bushings, wherein each of the first bushings and / or each of the second bushings has the limiting portions of a plurality of different sizes, and each of the limiting portions is selectively installed in the process chamber, or The limiting portion is detachably connected to the outer end of the first bending portion and / or the inner end of the second bending portion, wherein the first bushing and / or the second bushing are respectively configured with limiting portions of a plurality of different sizes.

8. The process chamber according to claim 1, wherein: The first bushing includes a plurality of the limiting portions, wherein the limiting portions are evenly distributed along the circumference of the first bushing, and / or The second bushing includes a plurality of the limiting portions, wherein the limiting portions are evenly distributed along the circumference of the second bushing.

9. The process chamber according to claim 1, wherein: Also includes: A deposition gas source, used for spraying reaction gas onto the heating plate to perform the thin film deposition process; as well as The purge gas source is used to provide the purge gas to the edge of the heating disk through the gas path while spraying the reaction gas, so as to suppress the deposition of the process gas on the edge of the heating disk.

10. A thin film deposition device, characterized in that: The process chamber comprises at least one process chamber according to any one of claims 1 to 9.

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