Photoresist coating jig and coating method

Abstract

The invention discloses a photoresist coating jig and a coating method, and particularly relates to the technical field of semiconductor process, the photoresist coating jig comprises a vacuum adsorption system and a horizontally arranged bearing platform; a groove is formed in the upper surface of the bearing platform, and the part, in the inner ring of the groove, of the bearing platform is a platform; second holes distributed along the vertexes of the diagonal lines of the platform are formed in the groove. The upper surface of the platform is provided with a plurality of first holes which are arranged according to a preset rule; and a plurality of passages are arranged in the bearing platform and enable the first hole to be communicated with the vacuum adsorption system. According to the invention, the condition that the photoresist is sprayed and coated on the silicon wafer to generate winding plating can be effectively improved, and the uniformity and the surface cleanliness after the photoresist is coated are improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor process technology, and in particular to a photoresist coating tool and a coating method. Background Art

[0002] Photolithography is a key process step in the semiconductor production process. Photolithography mainly includes processes such as photoresist coating, baking, exposure and development. The coating process commonly used is spin coating, spray coating, cast coating, roller coating, etc. It is necessary to ensure the uniformity and surface cleanliness of the photoresist after coating in the graphic process.

[0003] As one of the commonly used coating processes, spraying has the characteristics of strong adaptability to substrates, especially for substrates with irregular sizes and rough surfaces. It also has the advantages of high film-forming efficiency and suitability for double-sided processes. However, during the spraying process of photoresist, due to the gap between the silicon wafer and the carrier, the glue will penetrate the gap into the back of the silicon wafer during the spraying process, causing wrap-around plating on the back of the silicon wafer, affecting the surface uniformity and cleanliness of the back of the silicon wafer during spraying. At the same time, when spraying the back, it will in turn affect the glue film on the front side that has been sprayed, affecting the cleanliness of the front side, and thus affecting the subsequent photolithography effect.

[0004] Therefore, how to alleviate the occurrence of wrap-around plating on the back of silicon wafers during the spray coating process is an urgent problem that needs to be solved. Summary of the invention

[0005] The purpose of the present invention is to provide a photoresist coating tool and a coating method to solve the above problems.

[0006] In order to achieve the above-mentioned object, the present invention provides the following technical solutions: a photoresist coating jig, comprising a vacuum adsorption system and a horizontally arranged carrying platform;

[0007] A groove is formed on the upper surface of the bearing platform, and the bearing platform portion within the inner circle of the groove is a platform;

[0008] The groove is provided with second holes distributed along the vertices of the diagonal of the platform;

[0009] The upper surface of the platform is provided with a plurality of first holes arranged according to a predetermined pattern;

[0010] A plurality of passages are provided inside the carrying platform, and the plurality of passages connect the first hole with the vacuum adsorption system;

[0011] It also includes a recovery mechanism, which includes a passage arranged inside the carrying platform, the passage is connected to the second hole, and the passage can be connected to an external pipeline.

[0012] Preferably, the width of the groove is 1.5 mm to 2 mm.

[0013] Preferably, the groove and the bearing platform are both rectangular.

[0014] Preferably, there are five first holes, which are respectively located at the four corners and the center of the platform.

[0015] A coating method, based on the photoresist coating jig described in the above scheme, the operation method thereof comprises the following steps:

[0016] S01, diluting the photoresist with a diluent according to different proportions, and fully mixing to obtain a mixed solution;

[0017] S02, placing the silicon wafer on the photoresist coating jig, and starting the vacuum adsorption system so that the silicon wafer can be adsorbed on the photoresist coating jig;

[0018] S03, using a coating machine to coat the solution on the surface of the silicon wafer;

[0019] S04, baking the solution on the surface of the silicon wafer to solidify the solution on the surface of the silicon wafer.

[0020] Preferably, the diluent comprises propylene glycol methyl ether acetate and / or acetone.

[0021] Preferably, the step of placing the silicon wafer on the photoresist coating jig in step S02 includes:

[0022] S21, placing the silicon wafer on the upper surface of the carrying platform;

[0023] S22, moving the silicon wafer so that the center point of the silicon wafer is consistent with the center point of the platform of the inner circle of the groove;

[0024] S23, the glue liquid sprayed out of the silicon wafer range can be collected in the groove and flow out through the second hole for recycling.

[0025] Preferably, the step of fully mixing in step S01 includes:

[0026] S11, transferring the photoresist and the diluent into a beaker in sequence;

[0027] S12, placing a magnetic stirring bar in the beaker, and placing the beaker on a magnetic stirrer, with a rotation speed range of 200 rpm to 500 rpm and a stirring time of 1 min to 3 min;

[0028] S13, turning on the switch of the magnetic stirrer to fully mix the liquid in the beaker.

[0029] Preferably, in step S03, a coating machine is used to coat the solution on the surface of the silicon wafer, and the specific steps include:

[0030] S31, connecting the centrifuged solution to the glue pump pipeline of the coating machine, and turning on the nitrogen and air compressors;

[0031] S32, starting the operating program of the coating machine, ultrasonically atomizing the centrifuged solution at the nozzle, and as the nozzle moves, the ultrasonically atomized solution is evenly sprayed on the silicon wafer.

[0032] Preferably, the baking temperature in step S04 is in the range of 90° C. to 110° C., and the baking time is in the range of 3 min to 5 min.

[0033] In the above technical scheme, a photoresist coating jig and coating method provided by the present invention have the following beneficial effects: they can effectively improve the situation of photoresist spray coating silicon wafer wrap-around, and improve the uniformity and surface cleanliness of the photoresist after coating. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present invention. For ordinary technicians in this field, other drawings can also be obtained based on these drawings.

[0035] Figure 1 A schematic diagram of a three-dimensional structure provided by an embodiment of the present invention;

[0036] Figure 2 The embodiment of the present invention provides Figure 1 A schematic diagram of a top view structure;

[0037] Figure 3 A flowchart provided for an embodiment of the present invention.

[0038] Description of reference numerals:

[0039] 111, first hole; 112, platform of inner circle of groove; 12, groove; 121, second hole. DETAILED DESCRIPTION

[0040] In order to enable those skilled in the art to better understand the technical solution of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings.

[0041] Embodiment 1

[0042] like Figure 1 and Figure 2As shown, a photoresist coating jig includes a vacuum adsorption system and a horizontally arranged carrying platform;

[0043] A groove 12 is formed on the upper surface of the bearing platform, and the bearing platform portion within the inner circle of the groove 12 is a platform 112;

[0044] The groove 12 is provided with second holes 121 distributed along the diagonal vertices of the platform 112;

[0045] The upper surface of the platform 112 is provided with a plurality of first holes 111 , which are respectively located at the four corners and the center of the platform 112 ;

[0046] A plurality of passages are provided inside the carrying platform, and the plurality of passages connect the first hole 111 with the vacuum adsorption system;

[0047] The recovery mechanism also includes a passage arranged inside the carrying platform, the passage is connected to the second hole 121, and the passage can be connected to an external pipeline, and the external pipeline is connected to the input end of the suction pump.

[0048] In the above embodiment, the width of the groove is 1.5 mm to 2 mm.

[0049] Embodiment 2

[0050] like Figure 3 As shown, a coating method, using the photoresist coating jig provided in Example 1 to perform photoresist coating processing, includes the following steps:

[0051] S01. Diluting the photoresist with a diluent in different proportions and fully mixing to obtain a mixed solution, wherein:

[0052] Steps for thorough mixing include:

[0053] S11, transferring the photoresist and the diluent into a beaker in sequence;

[0054] S12. Place a magnetic stir bar in the beaker and place the beaker on the magnetic stirrer.

[0055] S13, turn on the switch of the magnetic stirrer to fully mix the liquid in the beaker

[0056] S02, place the silicon wafer on the upper surface of the carrying platform, move the silicon wafer so that the center point of the silicon wafer is consistent with the center point of the platform 112 of the inner circle of the groove. The glue liquid sprayed out of the silicon wafer can be collected in the groove 12, and flows out through the second hole 121 for recycling. Turn on the vacuum adsorption system so that the silicon wafer can be adsorbed on the photoresist coating tray, and there is no large gap between the silicon wafer and the platform of the inner circle of the groove, so that during the spraying process, the sprayed glue liquid will not penetrate through the gap between the silicon wafer and the platform, causing back-side bypass spraying, affecting the cleanliness of the other side of the silicon wafer, and making the thickness of the glue film on the other side of the silicon wafer inconsistent.

[0057] S03, using a coating machine to coat the solution on the surface of the silicon wafer, the steps comprising:

[0058] S31, connecting the centrifuged solution to the glue pump pipeline of the coating machine, and turning on the nitrogen and air compressors;

[0059] S32, start the operating program of the coating machine, ultrasonically atomize the centrifuged solution at the nozzle, and as the nozzle moves, the ultrasonically atomized solution is evenly sprayed on the silicon wafer.

[0060] S04. Bake the solution on the surface of the silicon wafer to solidify the solution on the surface of the silicon wafer.

[0061] Embodiment 3

[0062] Based on the above-mentioned embodiment 2, this embodiment uses the photoresist coating jig provided in embodiment 1 to perform photoresist coating processing, including the following steps:

[0063] S01. Diluting the photoresist with a diluent (propylene glycol methyl ether acetate) in different proportions and mixing thoroughly to obtain a mixed solution, wherein:

[0064] Steps for thorough mixing include:

[0065] S11, transferring the photoresist and the diluent into a beaker in sequence;

[0066] S12, place a magnetic stirring bar in the beaker, and place the beaker on a magnetic stirrer, with a speed range of 200 rpm and a stirring time of 1 min;

[0067] S13, turn on the switch of the magnetic stirrer to fully mix the liquid in the beaker

[0068] S02, place the silicon wafer on the upper surface of the carrying platform, and move the silicon wafer so that the center point of the silicon wafer is consistent with the center point of the platform 112 of the inner circle of the groove. The glue liquid sprayed outside the range of the silicon wafer can be collected in the groove 12, and flows out through the second hole 121 for recycling. Turn on the vacuum adsorption system so that the silicon wafer can be adsorbed on the photoresist coating tray, and there is no large gap between the silicon wafer and the platform of the inner circle of the groove, so that during the spraying process, the sprayed glue liquid will not penetrate through the gap between the silicon wafer and the platform, causing back-spraying, affecting the cleanliness of the other side of the silicon wafer, and making the thickness of the glue film on the other side of the silicon wafer inconsistent. ;

[0069] S03, using a coating machine to coat the solution on the surface of the silicon wafer, the steps comprising:

[0070] S31, connecting the centrifuged solution to the glue pump pipeline of the coating machine, and turning on the nitrogen and air compressors;

[0071] S32, start the operating program of the coating machine, ultrasonically atomize the centrifuged solution at the nozzle, and as the nozzle moves, the ultrasonically atomized solution is evenly sprayed on the silicon wafer.

[0072] S04. Bake the solution on the surface of the silicon wafer to solidify the solution on the surface of the silicon wafer, and the baking temperature range is 90° C. and the baking time range is 3 minutes.

[0073] Embodiment 4

[0074] Based on the above-mentioned embodiment 3, this embodiment uses the photoresist coating jig provided in embodiment 1 to perform photoresist coating processing, including the following steps:

[0075] S01. Diluting the photoresist with a diluent (propylene glycol methyl ether acetate) in different proportions and mixing thoroughly to obtain a mixed solution, wherein:

[0076] Steps for thorough mixing include:

[0077] S11, transferring the photoresist and the diluent into a beaker in sequence;

[0078] S12, place a magnetic stirring bar in the beaker, and place the beaker on a magnetic stirrer, with a speed range of 500 rpm and a stirring time of 3 min;

[0079] S13, turn on the switch of the magnetic stirrer to fully mix the liquid in the beaker

[0080] S02, place the silicon wafer on the upper surface of the carrying platform, and move the silicon wafer so that the center point of the silicon wafer is consistent with the center point of the platform 112 of the inner circle of the groove. The glue liquid sprayed outside the range of the silicon wafer can be collected in the groove 12, and flows out through the second hole 121 for recycling. Turn on the vacuum adsorption system so that the silicon wafer can be adsorbed on the photoresist coating tray, and there is no large gap between the silicon wafer and the platform of the inner circle of the groove, so that during the spraying process, the sprayed glue liquid will not penetrate through the gap between the silicon wafer and the platform, causing back-spraying, affecting the cleanliness of the other side of the silicon wafer, and making the thickness of the glue film on the other side of the silicon wafer inconsistent. ;

[0081] S03, using a coating machine to coat the solution on the surface of the silicon wafer, the steps comprising:

[0082] S31, connecting the centrifuged solution to the glue pump pipeline of the coating machine, and turning on the nitrogen and air compressors;

[0083] S32, start the operating program of the coating machine, ultrasonically atomize the centrifuged solution at the nozzle, and as the nozzle moves, the ultrasonically atomized solution is evenly sprayed on the silicon wafer.

[0084] S04. Bake the solution on the surface of the silicon wafer to solidify the solution on the surface of the silicon wafer, and the baking temperature range is 110° C. and the baking time range is 5 minutes.

[0085] Embodiment 5

[0086] Based on the above-mentioned embodiment 3, this embodiment uses the photoresist coating jig provided in embodiment 1 to perform photoresist coating processing, including the following steps:

[0087] S01. Dilute the photoresist with a diluent (acetone) in different proportions and mix thoroughly to obtain a mixed solution, wherein:

[0088] Steps for thorough mixing include:

[0089] S11, transferring the photoresist and the diluent into a beaker in sequence;

[0090] S12, place a magnetic stirring bar in the beaker, and place the beaker on a magnetic stirrer, with a speed range of 200 rpm and a stirring time of 1 min;

[0091] S13, turn on the switch of the magnetic stirrer to fully mix the liquid in the beaker

[0092] S02, place the silicon wafer on the upper surface of the carrying platform, and move the silicon wafer so that the center point of the silicon wafer is consistent with the center point of the platform 112 of the inner circle of the groove. The glue liquid sprayed outside the range of the silicon wafer can be collected in the groove 12, and flows out through the second hole 121 for recycling. Turn on the vacuum adsorption system so that the silicon wafer can be adsorbed on the photoresist coating tray, and there is no large gap between the silicon wafer and the platform of the inner circle of the groove, so that during the spraying process, the sprayed glue liquid will not penetrate through the gap between the silicon wafer and the platform, causing back-spraying, affecting the cleanliness of the other side of the silicon wafer, and making the thickness of the glue film on the other side of the silicon wafer inconsistent. ;

[0093] S03, using a coating machine to coat the solution on the surface of the silicon wafer, the steps comprising:

[0094] S31, connecting the centrifuged solution to the glue pump pipeline of the coating machine, and turning on the nitrogen and air compressors;

[0095] S32, start the operating program of the coating machine, ultrasonically atomize the centrifuged solution at the nozzle, and as the nozzle moves, the ultrasonically atomized solution is evenly sprayed on the silicon wafer.

[0096] S04. Bake the solution on the surface of the silicon wafer to solidify the solution on the surface of the silicon wafer, and the baking temperature range is 90° C. and the baking time range is 3 minutes.

[0097] Embodiment 6

[0098] Based on the above-mentioned embodiment 3, this embodiment uses the photoresist coating jig provided in embodiment 1 to perform photoresist coating processing, including the following steps:

[0099] S01. Dilute the photoresist with a diluent (acetone) in different proportions and mix thoroughly to obtain a mixed solution, wherein:

[0100] Steps for thorough mixing include:

[0101] S11, transferring the photoresist and the diluent into a beaker in sequence;

[0102] S12, place a magnetic stirring bar in the beaker, and place the beaker on a magnetic stirrer, with a speed range of 500 rpm and a stirring time of 3 min;

[0103] S13, turn on the switch of the magnetic stirrer to fully mix the liquid in the beaker

[0104] S02, place the silicon wafer on the upper surface of the carrying platform, and move the silicon wafer so that the center point of the silicon wafer is consistent with the center point of the platform 112 of the inner circle of the groove. The glue liquid sprayed outside the range of the silicon wafer can be collected in the groove 12, and flows out through the second hole 121 for recycling. Turn on the vacuum adsorption system so that the silicon wafer can be adsorbed on the photoresist coating tray, and there is no large gap between the silicon wafer and the platform of the inner circle of the groove, so that during the spraying process, the sprayed glue liquid will not penetrate through the gap between the silicon wafer and the platform, causing back-spraying, affecting the cleanliness of the other side of the silicon wafer, and making the thickness of the glue film on the other side of the silicon wafer inconsistent. ;

[0105] S03, using a coating machine to coat the solution on the surface of the silicon wafer, the steps comprising:

[0106] S31, connecting the centrifuged solution to the glue pump pipeline of the coating machine, and turning on the nitrogen and air compressors;

[0107] S32, start the operating program of the coating machine, ultrasonically atomize the centrifuged solution at the nozzle, and as the nozzle moves, the ultrasonically atomized solution is evenly sprayed on the silicon wafer.

[0108] S04. Bake the solution on the surface of the silicon wafer to solidify the solution on the surface of the silicon wafer, and the baking temperature range is 110° C. and the baking time range is 5 minutes.

[0109] The diluents in the above embodiments dilute the photoresist in different ratios of 1:3 to 1:10, which is common technical knowledge among those skilled in the art and will not be described in detail.

[0110] The above description is only by way of illustration of certain exemplary embodiments of the present invention. It is undoubted that those skilled in the art can modify the described embodiments in various ways without departing from the spirit and scope of the present invention. Therefore, the above drawings and descriptions are illustrative in nature and should not be construed as limiting the scope of protection of the claims of the present invention.

Claims

1. A photoresist coating jig, comprising a vacuum adsorption system, characterized in that: It also includes a horizontally arranged load-bearing platform; A groove (12) is provided on the upper surface of the bearing platform, and the portion of the bearing platform within the inner circle of the groove (12) is a platform (112); The groove (12) is provided with second holes (121) distributed along the diagonal vertices of the platform (112); The upper surface of the platform (112) is provided with a plurality of first holes (111) arranged according to a predetermined pattern; A plurality of passages are arranged inside the carrying platform, and the plurality of passages connect the first hole (111) with the vacuum adsorption system; It also includes a recovery mechanism, which includes a passage arranged inside the carrying platform, the passage is connected to the second hole (121), and the passage can be connected to an external pipeline.

2. A photoresist coating jig according to claim 1, characterized in that: The width of the groove is 1.5 mm to 2 mm.

3. A photoresist coating jig according to claim 1, characterized in that: The groove (12) and the bearing platform are both rectangular.

4. A photoresist coating jig according to claim 1, characterized in that: There are five first holes (111) in total, and they are respectively located at the four corners and the center of the platform (112).

5. A coating method, characterized in that: The operating method of the photoresist coating jig according to any one of claims 1 to 4 comprises the following steps: S01, diluting the photoresist with a diluent according to different proportions, and fully mixing to obtain a mixed solution; S02, placing the silicon wafer on the photoresist coating jig, and starting the vacuum adsorption system so that the silicon wafer can be adsorbed on the photoresist coating jig; S03, using a coating machine to coat the solution on the surface of the silicon wafer; S04, baking the solution on the surface of the silicon wafer to solidify the solution on the surface of the silicon wafer.

6. A coating method according to claim 5, characterized in that: The diluent includes propylene glycol methyl ether acetate and / or acetone.

7. A coating method according to claim 5, characterized in that: The step of placing the silicon wafer on the photoresist coating jig in step S02 includes: S21, placing the silicon wafer on the upper surface of the carrying platform; S22, moving the silicon wafer so that the center point of the silicon wafer is consistent with the center point of the platform (112) of the inner circle of the groove; S23, the glue liquid sprayed outside the silicon wafer range can be collected in the groove (12) and flow out through the second hole (121) for recycling.

8. A coating method according to claim 5, characterized in that: The step of fully mixing in step S01 includes: S11, transferring the photoresist and the diluent into a beaker in sequence; S12, placing a magnetic stirring bar in the beaker, and placing the beaker on a magnetic stirrer, with a rotation speed range of 200 rpm to 500 rpm and a stirring time of 1 min to 3 min; S13, turning on the switch of the magnetic stirrer to fully mix the liquid in the beaker.

9. A coating method according to claim 5, characterized in that: In step S03, a coating machine is used to coat the solution on the surface of the silicon wafer, and the specific steps include: S31, connecting the centrifuged solution to the glue pump pipeline of the coating machine, and turning on the nitrogen and air compressors; S32, starting the operating program of the coating machine, ultrasonically atomizing the centrifuged solution at the nozzle, and as the nozzle moves, the ultrasonically atomized solution is evenly sprayed on the silicon wafer.

10. A coating method according to claim 5, characterized in that: The baking temperature in step S04 is in the range of 90° C. to 110° C., and the baking time is in the range of 3 min to 5 min.

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