Chip state detection method
By moving the laser displacement sensor, recording the detection height of each pit position of the material tray station, and by comparing the heights of any two pit positions, judging the chip status, the problems of complex detection steps and low efficiency in the prior art are solved, and high efficiency is achieved , accurate chip status detection.
Patent Information
- Application Number
- CN202310930914.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-07-26
- Publication Date
- 2025-02-11
AI Technical Summary
The existing chip detection methods are inefficient and require multiple steps to obtain object surface information and consider multiple parameters, which leads to complex detection steps and high cost.
By moving the laser displacement sensor, the detection height is recorded by passing through each pit on the material tray station in turn, and the chip status is judged by the height comparison of any two pits, and the detection steps are simplified.
It realizes rapid and accurate detection of the chip status of each pit, reducing detection cost and complexity, and improving detection efficiency and versatility.
Smart Images
Figure CN119419129A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor detection technology, and in particular to a chip status detection method. Background Art
[0002] In chip detection, laser scanning is used to measure the chip status in each pit on the tray to facilitate subsequent operations of chip detection, such as cooperating with other structures to achieve chip detection. Therefore, from the perspective of chip detection, the efficiency of chip status measurement will directly affect the overall detection efficiency.
[0003] Then, most current measurement methods require obtaining surface information of an object and often need to measure distance, angle, plane and other data. Although accurate calculation results can be obtained, there are many steps involved and many parameters that need to be considered, which leads to low measurement efficiency. Or, after obtaining the measurement results, the manipulator needs to be calibrated or compensated before it can cooperate with other structures. Summary of the invention
[0004] Based on this, it is necessary to provide a detection method that can timely feedback the status of the chip in the carrier tray pit, facilitate the carrier tray to adapt to other structures in a timely manner, and can meet the chip status detection of different workstations and reduce the detection cost.
[0005] A chip status detection method comprises the following steps:
[0006] Move the laser displacement sensor to pass through each pit position on the tray station in turn, and record the detection height corresponding to each pit position in the tray station;
[0007] Get the detection heights corresponding to any two pit positions, take one of the pit positions as the target pit position and the corresponding target pit position height Z51, and the other pit position as the actual pit position and the corresponding actual pit position height Z52;
[0008] Taking the chip status in the target pit as a reference, the target pit height Z51 is compared with the actual pit height Z52 to obtain the chip status in the actual pit.
[0009] It is understandable that by moving the laser displacement sensor relative to the tray station, the laser displacement sensor can be moved to different tray stations to meet the chip status detection at different stations and reduce the detection cost. At the same time, only the comparison of the corresponding detection heights of any two pits is required to meet the chip status detection of each pit, which is not constrained by other parameters or chip size, and simplifies the detection steps, making the overall detection efficiency higher and more versatile. In this way, when the chip status detection method is applied to chip detection, it is convenient to timely feedback the chip status of each pit on the tray station, so as to facilitate the coordination of other structures of the tray station, thereby effectively improving the chip detection efficiency.
[0010] In some embodiments, taking the chip status in the target pit as a reference, comparing the target pit height Z51 with the actual pit height Z52 to obtain the chip status in the actual pit includes:
[0011] Get the comparison threshold range;
[0012] Obtaining a comparison difference value |Z51-Z52| between the target pit height Z51 and the actual pit height Z52;
[0013] The contrast difference is compared with the contrast threshold range to determine the status of the chip in the actual pit.
[0014] In some embodiments, the comparison threshold range uses different thresholds as comparison benchmarks, and the different thresholds are theoretical differences calculated when the target pit height Z51 and the actual pit height Z52 are different;
[0015] The comparing the comparison difference with the comparison threshold range to determine the chip status in the actual pit position includes: when the comparison difference matches the comparison threshold range, the chip status in the actual pit position is different from the chip status in the target pit position; when the comparison difference does not match the comparison threshold range, the chip status in the actual pit position is the same as the chip status in the target pit position.
[0016] In some embodiments, obtaining the comparison threshold range includes:
[0017] Get the chip thickness of a single chip;
[0018] Obtaining a first detection height from the upper surface of the chip when the chip is placed in the pit;
[0019] Obtaining a second detection height from the bottom surface of the pit when no chip is placed in the pit;
[0020] Comparing the first detection height with the second detection height to obtain a detection difference;
[0021] Comparing the chip thickness with the detection difference, and increasing and decreasing the detection difference within an effective range to obtain a critical maximum value and a critical minimum value;
[0022] Then the comparison threshold range is from the critical minimum value to the critical maximum value.
[0023] In some embodiments, the chip state includes a no-material state and a material-containing state;
[0024] The comparing the target pit height Z51 with the actual pit height Z52 based on the chip status in the target pit to obtain the chip status in the actual pit includes:
[0025] The target pit position is in the loaded state: if the comparison difference matches the comparison threshold range, the actual pit position is in the unloaded state; if the comparison difference does not match the comparison threshold range and is smaller than the comparison threshold range, the actual pit position is in the loaded state;
[0026] The target pit position is in the no-material state: if the comparison difference matches the comparison threshold range, the actual pit position is in the material state; if the comparison difference does not match the comparison threshold range and is smaller than the comparison threshold range, the actual pit position is in the no-material state.
[0027] In some embodiments, the comparison threshold range uses the same threshold as a comparison benchmark, and the same threshold is a theoretical difference value calculated when the target pit height Z51 and the actual pit height Z52 are the same;
[0028] The comparing the comparison difference with the comparison threshold range to determine the chip status in the actual pit position includes: when the comparison difference matches the comparison threshold range, the chip status in the actual pit position is the same as the chip status in the target pit position; when the comparison difference does not match the comparison threshold range, the chip status in the actual pit position is different from the chip status in the target pit position.
[0029] In some embodiments, the chip state includes a no-material state and a material-containing state;
[0030] The comparing the target pit height Z51 with the actual pit height Z52 based on the chip status in the target pit to obtain the chip status in the actual pit includes:
[0031] The target pit position is in the loaded state: if the comparison difference matches the comparison threshold range, the actual pit position is in the loaded state; if the comparison difference does not match the comparison threshold range and is greater than the comparison threshold range, the actual pit position is in the unloaded state;
[0032] The target pit position is in the no-material state: if the comparison difference matches the comparison threshold range, the actual pit position is in the no-material state; if the comparison difference does not match the comparison threshold range and is greater than the comparison threshold range, the actual pit position is in the material state.
[0033] In some of the embodiments, when the actual pit is out of material, an alarm is sounded; detection stops and waits for manual processing, or the laser displacement sensor moves to the next pit to continue detection.
[0034] In some embodiments, the mobile laser displacement sensor is moved to pass through each pit position on the tray station in sequence, and the detection height corresponding to each pit position in the tray station is recorded:
[0035] Selecting the center point of the pit and taking the center point as the actual detection point of each pit;
[0036] Move the laser displacement sensor to above the actual detection point, and emit a point laser to the actual detection point to obtain the actual detection height corresponding to each actual detection point;
[0037] The detection height of the pit position is then the actual detection height corresponding to the actual detection point.
[0038] In some embodiments, the moving laser displacement sensor so that it passes through each pit position on the tray station in sequence and records the detection height corresponding to each pit position in the tray station includes:
[0039] Obtaining the diagonal line of each of the pit positions, and selecting at least three points on the diagonal line as actual detection points; wherein each of the actual detection points is located at a position close to the vertex of the diagonal line;
[0040] Move the laser displacement sensor to above each of the actual detection points, and emit a point laser to each of the actual detection points to obtain an actual detection height corresponding to each of the actual detection points;
[0041] The detection height of the pit position is then the average value of the corresponding actual detection heights. BRIEF DESCRIPTION OF THE DRAWINGS
[0042] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.
[0043] Figure 1 A flowchart of the chip status detection method provided in this application;
[0044] Figure 2 A comparison flow chart of the chip status detection method provided in this application;
[0045] Figure 3 This is a judgment flow chart of the first solution of the chip status detection method provided in this application;
[0046] Figure 4 for Figure 3 A flow chart for judging the material state and the material-free state in the first solution of the provided chip state detection method;
[0047] Figure 5 A determination flow chart of the second solution of the chip status detection method provided in the present application;
[0048] Figure 6 for Figure 5 A flow chart for judging the material state and the material-free state in the second scheme of the provided chip state detection method. DETAILED DESCRIPTION
[0049] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.
[0050] It should be noted that when a component is referred to as being "fixed to" or "disposed on" another component, it may be directly on the other component or there may also be a central component. When a component is considered to be "connected to" another component, it may be directly connected to the other component or there may be a central component at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in the specification of this application are for illustrative purposes only and do not represent the only implementation method.
[0051] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of this application, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.
[0052] In the present application, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may mean that the first feature is directly in contact with the second feature, or the first feature and the second feature are indirectly in contact through an intermediate medium. Moreover, a first feature being “above”, “above” or “above” a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being “below”, “below” or “below” a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.
[0053] Unless otherwise defined, all technical and scientific terms used in the specification of this application have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application. The term "and / or" used in the specification of this application includes any and all combinations of one or more related listed items.
[0054] See also Figure 1 , the present application provides a chip status detection method, comprising the following steps:
[0055] Move the laser displacement sensor to pass through each pit position on the tray station in turn, and record the detection height corresponding to each pit position in the tray station;
[0056] Get the detection heights corresponding to any two pit positions, take one of the pit positions as the target pit position and the corresponding target pit position height Z51, and the other pit position as the actual pit position and the corresponding actual pit position height Z52;
[0057] Taking the chip status in the target pit as a reference, the target pit height Z51 is compared with the actual pit height Z52 to obtain the chip status in the actual pit.
[0058] It is understandable that when performing detection, the chip status of all pits can be obtained by comparing the detection heights corresponding to any two pits. This mode of operation only requires the height measurement of each pit, without considering the influence of various parameters such as distance, angle and flatness, simplifies the detection steps, improves the detection efficiency, and has wider versatility. Therefore, by applying it in the chip detection process, it can timely reflect the chip status in each pit on the corresponding tray station, so as to facilitate the transfer of the tray station to different areas, or facilitate the tray station to adapt to other structures in time and perform other operations, and the overall operation efficiency is higher. In addition, by moving the laser displacement sensor relative to the tray station, so as to move the laser displacement sensor to different tray stations to meet the chip status detection at different stations, there is no need to set a corresponding laser displacement sensor for each tray station, thereby reducing the detection cost.
[0059] Exemplarily, moving the laser displacement sensor so that it passes through each pit position on the tray station in turn and recording the detection height corresponding to each pit position in the tray station includes: installing the laser displacement sensor on a manipulator, driving the manipulator to move to drive the laser displacement sensor to move, and when the laser displacement sensor passes through each pit position, it is necessary to perform laser emission with at least one point as the detection point to obtain the corresponding detection height. That is to say, in this embodiment, the laser displacement sensor can emit point lasers or line lasers to each pit position, as long as it can meet the detection height acquisition of each pit position. Among them, when emitting point lasers, at least one point can be selected as the detection point; when emitting line lasers, multiple points can be selected to calculate the average value as the detection height of the corresponding pit position.
[0060] like Figure 1 As shown, in an optional embodiment, the detection heights corresponding to any two pits are obtained, one of the pits is taken as the target pit and corresponds to the target pit height Z51, and the other pit is taken as the actual pit and corresponds to the actual pit height Z52, including: moving the laser displacement sensor through all the pits in sequence to meet the height detection of all the pits, and storing the detection heights corresponding to each pit in the server; then, one of the pits can be selected as the target pit, and the remaining pits can be used as actual pits, and then the actual pit height Z52 corresponding to each actual pit is retrieved, and compared with the retrieved target pit height Z51, so as to obtain the chip status of each actual pit.
[0061] In an alternative embodiment, the positions may be grouped. For example, all the positions are first grouped in half, and then each group is grouped in half again, until each group corresponds to only two positions. After the detection heights corresponding to all the positions are obtained, the group with the smallest two positions is tested within the group. In this way, multiple tests can be performed to obtain the chip status in each position. Among them, the grouping of the positions may be to directly divide the positions on the tray station before the test; of course, it may also be to group the data stored in the server after the detection heights corresponding to the positions are obtained. It is sufficient as long as the chip status in each position on the tray station can be obtained by comparing any two positions.
[0062] In actual use, after the target pit and the actual pit are determined, the target pit height Z51 and the actual pit height Z52 can be obtained, and then the target pit height Z51 and the actual pit height Z52 can be compared with the chip status in the target pit as a reference, so as to know the chip status in the actual pit. Among them, the chip status includes the material status and the no-material status; then, the material status is recorded as the chip is just placed in the corresponding pit cavity, and there is only one chip in each pit cavity. At this time, the upper surface of the chip is used as the detection surface to obtain the detection height; when it is in the no-material state, the bottom surface of the pit is used as the detection surface to obtain the detection height.
[0063] like Figure 2 As shown, illustratively, taking the chip status in the target pit as a reference, comparing the target pit height Z51 with the actual pit height Z52 to obtain the chip status in the actual pit includes:
[0064] Get the comparison threshold range;
[0065] Obtain the comparison difference |Z51-Z52| between the target pit height Z51 and the actual pit height Z52;
[0066] The contrast difference is compared with the contrast threshold range to determine the status of the chip in the actual pit.
[0067] When the chip status in the target pit is the same as the chip status in the actual pit, it can be that both are in a state of material or both are in a state of no material, then the corresponding target pit height Z51 and the actual pit height Z52 are the same, and the comparison difference is 0. When the chip status in the target pit is different from the chip status in the actual pit, it can be that one is in a state of no material and the other is in a state of material, then the corresponding target pit height Z51 and the actual pit height Z52 are different, the comparison difference is greater than 0, and is one chip thickness.
[0068] When the target pit is in a state of no material: if the actual pit is in a state of material, the comparison difference is basically the same as the chip thickness of a single chip; if the actual pit is in a state of no material, the comparison difference is 0. When the target pit is in a state of material: if the actual pit is in a state of material, the comparison difference is 0; if the actual pit is in a state of no material, the comparison difference is basically the same as the chip thickness of a single chip.
[0069] Therefore, 0 can be used as the comparison threshold, which can be called the same threshold at this time; of course, the chip thickness can also be used as the comparison threshold, which can be called a different threshold. Among them, taking into account the influence of errors, it can float appropriately to obtain a range value, which corresponds to the comparison threshold range. For example, taking the same threshold as an example, it can float above and below 0; and, since the comparison difference is actually expressed in the form of an absolute value, the comparison difference floats a certain value on 0, such as 0-1.5, which is only used as an example here. In addition, since the difference between the target pit height Z51 and the actual pit height Z52 can be a negative number or a positive number, in order to facilitate comparison, the comparison difference can be expressed in the form of an absolute value.
[0070] In summary, if Figure 3 As shown, when different thresholds are used as comparison benchmarks, the comparison difference is compared with the comparison threshold range to determine the chip state in the actual pit position, including: when the comparison difference matches the comparison threshold range, the chip state in the actual pit position is different from the chip state in the target pit position; when the comparison difference does not match the comparison threshold range, the chip state in the actual pit position is the same as the chip state in the target pit position. The mismatch here means that the comparison difference is less than the comparison threshold range, specifically, the comparison difference is less than the minimum value of the comparison threshold range.
[0071] like Figure 5 As shown, when the same threshold is used as the comparison reference, the comparison difference is compared with the comparison threshold range to determine the chip state in the actual pit position, including: when the comparison difference matches the comparison threshold range, the chip state in the actual pit position is the same as the chip state in the target pit position; when the comparison difference does not match the comparison threshold range, the chip state in the actual pit position is different from the chip state in the target pit position. The matching mentioned here means that the obtained comparison difference falls within the corresponding comparison threshold range, which can be the two endpoint values of the comparison threshold range, or it can be a value between the two endpoint values. The mismatch mentioned here means that the comparison difference is greater than the comparison threshold range. Specifically, the comparison difference is greater than the maximum value of the comparison threshold range, such as greater than 1.5, which is only used as an example here.
[0072] In some embodiments, when different thresholds are used as comparison benchmarks, obtaining the comparison threshold range includes:
[0073] Get the chip thickness of a single chip;
[0074] Obtaining a first detection height from the upper surface of the chip when the chip is placed in the pit;
[0075] Obtaining a second detection height from the bottom surface of the pit when no chip is placed in the pit;
[0076] Compare the first detection height with the second detection height to obtain a detection difference;
[0077] Compare the chip thickness and the detection difference, and increase and decrease the detection difference within an effective range to obtain a critical maximum value and a critical minimum value;
[0078] The comparison threshold range is from the critical minimum value to the critical maximum value.
[0079] Among them, the detection difference is the difference between the first detection height and the second detection height, which can also be understood as a chip thickness. As mentioned above, due to the existence of various manufacturing errors and errors caused by other factors, the detection difference has a certain deviation compared to the chip thickness. Therefore, it is necessary to increase and reduce the detection difference within the effective range. The effective range here refers to taking into account the influence of various errors such as pit manufacturing errors and chip manufacturing errors. After multiple tests are performed to obtain multiple data, analysis and estimation are performed to obtain a calculated theoretical range, that is, the comparison threshold range.
[0080] In an alternative embodiment, when the same threshold is used as a comparison reference, obtaining the comparison threshold range includes:
[0081] Obtaining first detection heights from the upper surface of the chip when the chips are placed in any two pits;
[0082] Obtaining the second detection heights from the bottom surfaces of any two pits when no chips are placed in the pits;
[0083] Compare the two first detection heights and the two second detection heights respectively to obtain a first difference and a second difference;
[0084] Calculate an average difference value according to the first difference value and the second difference value, and increase and decrease the average difference value within a valid range to obtain a critical maximum value and a critical minimum value;
[0085] The comparison threshold value range is from the critical minimum value to the critical maximum value.
[0086] Among them, the first difference is the difference between the two first detection heights, and the second difference is the difference between the two second detection heights. Ideally, the first difference and the second difference are both 0; however, due to various manufacturing errors and errors caused by other factors, the first difference and the second difference may fluctuate around 0; in order to improve the calculation accuracy, multiple measurements can be performed to calculate the average value between the various calculation results. It should be noted that the effective range here is basically the same as the understanding of the above embodiment, so it will not be repeated here.
[0087] Regardless of which method is used, as long as a certain comparison threshold range can be obtained, it can be used to determine the chip status in the actual pit. The comparison threshold range can be stored in the server and wait for subsequent comparison to be retrieved and used.
[0088] In addition, it should be added that, since any two pits on the same tray station are compared for judgment, the tray station can be calibrated as a whole before testing to reduce the impact on the test results.
[0089] In summary, if Figure 4 and Figure 6 The chip status in the target pit is taken as a reference, and the target pit height Z51 is compared with the actual pit height Z52 to obtain the chip status in the actual pit, including:
[0090] When different thresholds are used as comparison benchmarks, the specific judgment is as follows:
[0091] When the target pit is in a state of having material: if the comparison difference matches the comparison threshold range, the actual pit is in a state of having no material; if the comparison difference does not match the comparison threshold range and is smaller than the comparison threshold range, the actual pit is in a state of having material;
[0092] When the target pit position is in a no-material state: if the comparison difference matches the comparison threshold range, the actual pit position is in a material state; if the comparison difference does not match the comparison threshold range and is smaller than the comparison threshold range, the actual pit position is in a no-material state.
[0093] When the same threshold is used as the comparison benchmark, the specific judgment is as follows:
[0094] When the target pit is in a state of having material: if the comparison difference matches the comparison threshold range, the actual pit is in a state of having material; if the comparison difference does not match the comparison threshold range and is greater than the comparison threshold range, the actual pit is in a state of having no material;
[0095] When the target pit position is in a no-material state: if the comparison difference matches the comparison threshold range, the actual pit position is in a no-material state; if the comparison difference does not match the comparison threshold range and is greater than the comparison threshold range, the actual pit position is in a material state.
[0096] In actual use, when the actual pit is in a state of no material, an alarm can be given, such as flashing lights, sound broadcasts, or pop-up alarms on the display, etc., as long as the warning effect can be mentioned. Then the detection operation stops and waits for manual processing. Alternatively, an alarm can be used to record that a certain actual pit is in a state of no material, and the laser displacement sensor continues to move to the next pit for continued detection to determine the chip status of the next pit.
[0097] In an optional embodiment, when acquiring the detection height of each pit position, the center point of each pit position can be used as the actual detection point. After the laser displacement sensor moves to the top of the actual detection point, a point laser can be emitted to the actual detection point to obtain the actual detection height corresponding to the actual detection point. The detection height of each pit position is the actual detection height of the corresponding actual detection point. In some specific embodiments, the chip is rectangular, so the corresponding pit position is also arranged in a rectangular shape. At this time, the center point of the pit position is located at the intersection of two diagonals. At this time, only a single detection of a pit position is required to obtain the corresponding detection height, thereby improving the detection efficiency.
[0098] In an alternative embodiment, moving the laser displacement sensor so that it passes through each pit position on the tray station in sequence and recording the detection height corresponding to each pit position in the tray station also includes:
[0099] Get the diagonal of each pit and select at least three points on the diagonal as actual detection points;
[0100] Move the laser displacement sensor to the top of each actual detection point, and emit a point laser to each actual detection point to obtain the actual detection height corresponding to each actual detection point;
[0101] The detection height of the pit position is the average value of the corresponding actual detection heights.
[0102] Such a setting improves the detection accuracy. Among them, each time the detection height corresponding to a detection point is obtained, it needs to be stored in the server, and then the corresponding average value can be calculated using software formulas. In some specific embodiments, four points on two diagonals can be selected as detection points. The rectangular area surrounded by the four points accounts for 50%-90% of the rectangular area surrounded by the pit edge line. This is only an example, and the specific numerical range can be adjusted according to actual needs. Such a setting ensures that the four detection points are not too close or too far apart. If the four detection points are too close, the difference in the detection heights corresponding to the four detection points is not obvious enough, which affects the detection results; if the four detection points are too scattered, the detection points may be offset or inaccurate, which will also affect the detection results.
[0103] In actual use, the above-mentioned tray station can be a feed tray, and the chip status of each pit position on the feed tray is detected to facilitate the transfer of the feed tray to different areas. Therefore, before performing the detection of each pit position, it is possible to first determine whether the corresponding tray station is a feed tray, and in the case of a feed tray, start the above operation. Moreover, since the laser displacement sensor is installed on the manipulator during the detection process, it can move relative to the tray station, thereby meeting the chip status detection at different stations and reducing the detection cost. At the same time, compared with the need to consider the influence of multiple parameters such as distance, angle and flatness in the related technology, in this detection method, only the height measurement method is needed to meet the chip status detection of each pit position, which is not constrained by other parameters or chip size, and simplifies the detection steps, making the overall detection efficiency higher and more versatile. Therefore, the detection method is applied to chip detection, which is convenient for timely completion of chip status detection in each pit position on the tray station, so that other structures can cooperate with the tray station to effectively improve chip detection efficiency.
[0104] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0105] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the scope of patent protection of the present application shall be subject to the attached claims.
Claims
1. A chip status detection method, characterized in that: The chip status detection method comprises the following steps: Move the laser displacement sensor to pass through each pit position on the tray station in turn, and record the detection height corresponding to each pit position in the tray station; Get the detection heights corresponding to any two pit positions, take one of the pit positions as the target pit position and the corresponding target pit position height Z51, and the other pit position as the actual pit position and the corresponding actual pit position height Z52; Taking the chip status in the target pit as a reference, the target pit height Z51 is compared with the actual pit height Z52 to obtain the chip status in the actual pit.
2. The chip status detection method according to claim 1, characterized in that: The comparing the target pit height Z51 with the actual pit height Z52 based on the chip status in the target pit to obtain the chip status in the actual pit includes: Get the comparison threshold range; Obtaining a comparison difference value |Z51-Z52| between the target pit height Z51 and the actual pit height Z52; The contrast difference is compared with the contrast threshold range to determine the status of the chip in the actual pit.
3. The chip status detection method according to claim 2, characterized in that: The comparison threshold range uses different thresholds as comparison benchmarks, and the different thresholds are theoretical differences calculated when the target pit height Z51 and the actual pit height Z52 are different; The comparing the comparison difference with the comparison threshold range to determine the chip status in the actual pit position includes: when the comparison difference matches the comparison threshold range, the chip status in the actual pit position is different from the chip status in the target pit position; when the comparison difference does not match the comparison threshold range, the chip status in the actual pit position is the same as the chip status in the target pit position.
4. The chip status detection method according to claim 3, characterized in that: The acquisition comparison threshold range includes: Get the chip thickness of a single chip; Obtaining a first detection height from the upper surface of the chip when the chip is placed in the pit; Obtaining a second detection height from the bottom surface of the pit when no chip is placed in the pit; Comparing the first detection height with the second detection height to obtain a detection difference; Comparing the chip thickness with the detection difference, and increasing and decreasing the detection difference within an effective range to obtain a critical maximum value and a critical minimum value; Then the comparison threshold range is from the critical minimum value to the critical maximum value.
5. The chip status detection method according to claim 3, characterized in that: The chip state includes a no-material state and a material-containing state; The step of comparing the comparison difference with the comparison threshold range to determine the actual chip status in the pit also includes: The target pit position is in the loaded state: if the comparison difference matches the comparison threshold range, the actual pit position is in the unloaded state; if the comparison difference does not match the comparison threshold range and is smaller than the comparison threshold range, the actual pit position is in the loaded state; The target pit position is in the no-material state: if the comparison difference matches the comparison threshold range, the actual pit position is in the material state; if the comparison difference does not match the comparison threshold range and is smaller than the comparison threshold range, the actual pit position is in the no-material state.
6. The chip status detection method according to claim 2, characterized in that: The comparison threshold range uses the same threshold as the comparison benchmark, and the same threshold is the theoretical difference calculated when the target pit height Z51 and the actual pit height Z52 are the same; The comparing the comparison difference with the comparison threshold range to determine the chip status in the actual pit position includes: when the comparison difference matches the comparison threshold range, the chip status in the actual pit position is the same as the chip status in the target pit position; when the comparison difference does not match the comparison threshold range, the chip status in the actual pit position is different from the chip status in the target pit position.
7. The chip status detection method according to claim 6, characterized in that: The chip state includes a no-material state and a material-containing state; The step of comparing the comparison difference with the comparison threshold range to determine the actual chip status in the pit also includes: The target pit position is in the loaded state: if the comparison difference matches the comparison threshold range, the actual pit position is in the loaded state; if the comparison difference does not match the comparison threshold range and is greater than the comparison threshold range, the actual pit position is in the unloaded state; The target pit position is in the no-material state: if the comparison difference matches the comparison threshold range, the actual pit position is in the no-material state; if the comparison difference does not match the comparison threshold range and is greater than the comparison threshold range, the actual pit position is in the material state.
8. The chip status detection method according to claim 5 or 7, characterized in that: When the actual pit is out of material, an alarm is issued; The detection stops and waits for manual processing; or, the laser displacement sensor moves to the next pit position and continues the detection.
9. The chip status detection method according to claim 1, characterized in that: The mobile laser displacement sensor passes through each pit position on the tray station in turn, and records the detection height corresponding to each pit position in the tray station: Selecting the center point of the pit and taking the center point as the actual detection point of each pit; Move the laser displacement sensor to above the actual detection point, and emit a point laser to the actual detection point to obtain the actual detection height corresponding to each actual detection point; The detection height of the pit position is then the actual detection height corresponding to the actual detection point.
10. The chip status detection method according to claim 1, characterized in that: The moving laser displacement sensor passes through each pit position on the tray station in sequence, and records the detection height corresponding to each pit position in the tray station, including: Obtaining the diagonal line of each of the pit positions, and selecting at least three points on the diagonal line as actual detection points; wherein each of the actual detection points is located at a position close to the vertex of the diagonal line; Move the laser displacement sensor to above each of the actual detection points, and emit a point laser to each of the actual detection points to obtain an actual detection height corresponding to each of the actual detection points; The detection height of the pit position is then the average value of the corresponding actual detection heights.