Packaging structure and forming method thereof

Abstract

The invention discloses a packaging structure and a forming method thereof. The packaging structure comprises a chip structure; the electric interconnection layer is electrically connected with the chip structure; the plurality of bonding bumps are electrically connected with the electric interconnection layer; a bonding frame; a first liquid flow channel is arranged in the driving substrate, the driving substrate is in bonding connection with the bonding salient points and the bonding frame, and the bonding frame is communicated with the first liquid flow channel; the liquid inlet pipe and the liquid outlet pipe are respectively communicated with the liquid inlet and the liquid outlet; and the bottom filling glue is used for bonding and fixing the liquid inlet pipe and the liquid outlet pipe with the driving substrate. The liquid inlet pipe and the liquid outlet pipe can provide a convenient butt joint mode and are bonded and fixed through underfill glue, so that the sealing reliability requirement for long-term use is met. The formation of a complete liquid flow channel structure and the fixed connection of the liquid inlet pipe and the liquid outlet pipe are matched with the requirements of an existing packaging process, and then mass production can be achieved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a packaging structure and a forming method thereof. Background Art

[0002] The packaging process of integrated circuits is an essential step in the process of converting integrated circuit chips into practical electronic products. It plays the role of interconnecting electronic modules, mechanical support, and protection, and can significantly improve the reliability of chips. For integrated circuit packaging systems with high performance requirements, flip-chip packaging has begun to become the mainstream method for high-density integrated circuit packaging; at the same time, the emergence of three-dimensional packaging also provides the possibility for higher-density electronic packaging. Summary of the invention

[0004] The technical problem solved by the present invention is to provide a packaging structure and a method for forming the same, so that the sealing performance can meet the requirements of long-term reliability and match the requirements of the existing packaging process to achieve mass production.

[0005] To solve the above problems, the present invention provides a packaging structure, comprising: a chip structure; an electrical interconnection layer, the electrical interconnection layer is located on the surface of the chip structure, the electrical interconnection layer is electrically connected to the chip structure; a plurality of bonding bumps, the bonding bumps are located on the electrical interconnection layer, the bonding bumps are electrically connected to the electrical interconnection layer, and the bonding bumps are electrically connected to the chip structure through the electrical interconnection layer; a bonding frame, the bonding frame is located on the electrical interconnection layer; a driving substrate, the driving substrate has a first liquid flow channel, the surface of the driving substrate exposes a liquid inlet and a liquid outlet of the first liquid flow channel, the driving substrate is bonded to the bonding bumps and the bonding frame respectively, and the bonding frame is connected to the first liquid flow channel; a liquid inlet pipe, the liquid inlet pipe is connected to the liquid inlet; a liquid outlet pipe, the liquid outlet pipe is connected to the liquid outlet; and an underfill, the underfill is used to bond and fix the liquid inlet pipe to the driving substrate, and the liquid outlet pipe to the driving substrate.

[0006] Optionally, the chip structure is bonded to the driving substrate to form a second liquid flow channel, and the second liquid flow channel is connected to the first liquid flow channel in the driving substrate through the bonding frame.

[0007] Optionally, it further includes: a reinforcement ring, which is located on the driving substrate and surrounds the chip structure, the electrical interconnection layer, the bonding bumps and the bonding frame.

[0008] Optionally, the liquid inlet pipe and the liquid outlet pipe pass through the reinforcement ring and are fixedly connected to the driving substrate.

[0009] Optionally, it further includes: a packaging layer, which is located on the chip structure and the driving substrate and covers the chip structure, the electrical interconnection layer, the bonding bumps, the bonding frame, and part of the driving substrate.

[0010] Optionally, the electrical interconnection layer includes: a plurality of pads, the pads are electrically connected to the chip structure, and the bonding bumps are electrically connected to corresponding pads.

[0011] Optionally, the material of the liquid inlet pipe includes: metal material; the material of the liquid outlet pipe includes: metal material; the metal material includes: carbon steel, copper, stainless steel, aluminum alloy or titanium.

[0012] Correspondingly, the technical solution of the present invention also provides a method for forming a packaging structure, including: providing a chip structure; forming an electrical interconnection layer on the surface of the chip structure, the electrical interconnection layer being electrically connected to the chip structure; forming a plurality of bonding bumps and a bonding frame on the electrical interconnection layer, the bonding bumps being electrically connected to the electrical interconnection layer, and the bonding bumps being electrically connected to the chip structure through the electrical interconnection layer; providing a driving substrate, the driving substrate having a first liquid flow channel, the surface of the driving substrate exposing a liquid inlet and a liquid outlet of the first liquid flow channel; bonding the driving substrate to the bonding bumps and the bonding frame, respectively, the bonding frame being connected to the first liquid flow channel; providing a liquid inlet pipe and a liquid outlet pipe; bonding and fixing the liquid inlet pipe to the driving substrate, and the liquid outlet pipe to the driving substrate, respectively, based on bottom filling glue, the liquid inlet pipe after bonding and fixing being connected to the liquid inlet, and the liquid outlet pipe being connected to the liquid outlet. Optionally, the chip structure is flipped over and bonded to the driving substrate, a second liquid flow channel is formed between the bonded chip structure and the driving substrate, and the second liquid flow channel is connected to the first liquid flow channel in the driving substrate through the bonding frame.

[0013] Optionally, before bonding and fixing the liquid inlet pipe and the liquid outlet pipe, the method further includes: bonding a reinforcement ring on the driving substrate, wherein the reinforcement ring surrounds the chip structure, the electrical interconnection layer, the bonding bumps and the bonding frame.

[0014] Optionally, before the reinforcement ring is bonded to the driving substrate, the method further includes: performing an opening process on the reinforcement ring; and the liquid inlet pipe and the liquid outlet pipe penetrate through the reinforcement ring and are fixedly connected to the driving substrate.

[0015] Optionally, before bonding and fixing the liquid inlet pipe and the liquid outlet pipe, the method further includes: forming a packaging layer, wherein the packaging layer covers the chip structure, the electrical interconnection layer, the bonding bumps, the bonding frame, and a portion of the drive substrate.

[0016] Optionally, the electrical interconnection layer includes: a plurality of pads, the pads are electrically connected to the chip structure, and the bonding bumps are electrically connected to corresponding pads.

[0017] Optionally, the bonding bump and the bonding frame are formed synchronously.

[0018] Optionally, the method for forming the bonding bump and the bonding frame includes: forming a photoresist layer on the electrical interconnection layer, the photoresist layer having a plurality of patterned openings; forming the bonding bump and the bonding frame in the corresponding patterned openings; and removing the photoresist layer after forming the bonding bump and the bonding frame.

[0019] Optionally, the bonding bumps and the bonding frame are formed in the corresponding patterned openings by an electroplating process.

[0020] Compared with the prior art, the technical solution of the present invention has the following advantages: In the packaging structure of the technical solution of the present invention, the second liquid flow channel formed between the chip structure and the driving substrate after the two are bonded is connected to the first liquid flow channel in the driving substrate through the bonding frame to form a complete liquid flow channel structure. The liquid inlet pipe and the liquid outlet pipe are respectively connected to the liquid inlet and the liquid outlet of the driving substrate, providing a convenient docking method. Moreover, the liquid inlet pipe and the driving substrate, as well as the liquid outlet pipe and the driving substrate are bonded and fixed by the bottom filling glue to meet the sealing reliability requirements for long-term use. The formation of a complete liquid flow channel structure and the fixed connection of the liquid inlet pipe and the liquid outlet pipe can match the requirements of the existing packaging process, and thus can achieve mass production. The introduction of cooling liquid and circulation through the second liquid flow channel can dissipate heat for the chip structure from below. In addition, the circulation of the cooling liquid also flows through the first liquid flow channel in the driving substrate, and can also dissipate heat for the driving substrate.

[0021] Furthermore, it also includes: a reinforcement ring, which is located on the driving substrate and surrounds the chip structure, the electrical interconnection layer, the bonding bumps and the bonding frame. The reinforcement ring can increase the overall mechanical strength of the packaging structure and can suppress the warping phenomenon that occurs during packaging.

[0022] Furthermore, the liquid inlet pipe and the liquid outlet pipe penetrate the reinforcing ring and are fixedly connected to the driving substrate. By passing the liquid inlet pipe and the liquid outlet pipe through the reinforcing ring, the reinforcing ring can provide a more stable limit for the liquid inlet pipe and the liquid outlet pipe, thereby effectively reducing the problem of loosening of the bonding position of the liquid inlet pipe and the liquid outlet pipe with the driving substrate and causing leakage.

[0023] In the method for forming the packaging structure of the technical solution of the present invention, the chip structure is flipped over and bonded to the drive substrate. A second liquid flow channel is formed between the bonded chip structure and the drive substrate, and is connected to the first liquid flow channel in the drive substrate through the bonding frame to form a complete liquid flow channel structure. The liquid inlet pipe and the liquid outlet pipe are respectively connected to the liquid inlet and the liquid outlet of the drive substrate, providing a convenient docking method. Moreover, the liquid inlet pipe and the drive substrate, as well as the liquid outlet pipe and the drive substrate are bonded and fixed by the bottom filling glue to meet the sealing reliability requirements for long-term use. The formation of a complete liquid flow channel structure and the fixed connection of the liquid inlet pipe and the liquid outlet pipe can match the requirements of the existing packaging process, and thus can achieve mass production. The introduction of cooling liquid and the circulation through the second liquid flow channel can dissipate heat from the bottom of the chip structure. In addition, the circulation of the cooling liquid also flows through the first liquid flow channel in the drive substrate, and can also dissipate heat for the drive substrate.

[0024] Furthermore, before the liquid inlet pipe and the liquid outlet pipe are bonded and fixed, the method further includes: bonding a reinforcement ring on the drive substrate, the reinforcement ring surrounding the chip structure, the electrical interconnection layer, the bonding bumps and the bonding frame. The reinforcement ring can increase the overall mechanical strength of the packaging structure and can suppress the warping phenomenon that occurs during packaging.

[0025] Furthermore, before the reinforcing ring is bonded to the driving substrate, the method further includes: opening the reinforcing ring; and the liquid inlet pipe and the liquid outlet pipe penetrate the reinforcing ring and are fixedly connected to the driving substrate. By passing the liquid inlet pipe and the liquid outlet pipe through the reinforcing ring, the reinforcing ring can provide a more stable limit for the liquid inlet pipe and the liquid outlet pipe, thereby effectively reducing the problem of loosening of the bonding position of the liquid inlet pipe and the liquid outlet pipe with the driving substrate and causing leakage. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figures 1 to 11 It is a structural schematic diagram of each step of the method for forming a packaging structure in an embodiment of the present invention. DETAILED DESCRIPTION

[0027] In order to facilitate the understanding of the present disclosure, the exemplary embodiments disclosed in the present disclosure will be described in more detail below with reference to the relevant drawings. Although the exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the specific embodiments set forth herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0028] In the following description, a large number of specific details are given to provide a more thorough understanding of the present disclosure. However, it is obvious to those skilled in the art that the present disclosure can be implemented without one or more of these details. In some embodiments, in order to avoid confusion with the present disclosure, some technical features known in the art are not described; that is, all features of the actual embodiment may not be described here, and well-known functions and structures may not be described in detail.

[0029] Generally, terms can be understood at least in part from their use in context. For example, depending at least in part on the context, the term "one or more" as used herein can be used to describe any feature, structure or characteristic in a singular sense, or can be used to describe a combination of features, structures or characteristics in a plural sense. Similarly, terms such as "one" or "the" can also be understood to convey singular usage or to convey plural usage, depending at least in part on the context. In addition, the term "based on" can be understood to not necessarily be intended to convey an exclusive set of factors, and can alternatively allow for the presence of additional factors that are not necessarily explicitly described, which also depends at least in part on the context.

[0030] Unless otherwise defined, the purpose of the terms used herein is only to describe specific embodiments and is not intended to limit the present disclosure. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates another way. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0031] In order to thoroughly understand the present disclosure, detailed steps and detailed structures will be presented in the following description to illustrate the technical solution of the present disclosure. The preferred embodiments of the present disclosure are described in detail below, but in addition to these detailed descriptions, the present disclosure may also have other implementations.

[0032] As described in the background art, there are still many problems with the packaging structure in the prior art, which will be described in detail below with reference to the accompanying drawings.

[0033] As the integration of chips becomes higher and higher, the heat generated also increases. Traditional air cooling methods can no longer meet the needs of efficient heat dissipation. Therefore, microchannel liquid cooling technology came into being. This heat dissipation technology uses liquid (usually water or special coolant) to flow through tiny channels on the surface of the chip to remove heat. With the development of chip stacking technology, the number of stacked layers of chip structures is increasing, and it is becoming increasingly difficult for the heat under the chip structure to dissipate from the surface of the chip structure. The silicon-based flow channel bonding solution is usually suitable for the top inlet and outlet liquid structure, and cannot dissipate heat from the bottom of the chip structure.

[0034] At the same time, the inlet and outlet pipes and the inlet and outlet of the microchannel are currently temporarily sealed by gluing or rubber gaskets. This type of sealing cannot meet the long-term reliability requirements and cannot match the requirements of the existing packaging process and cannot be mass-produced.

[0035] On this basis, the present invention provides a packaging structure and a method for forming the same, wherein a first liquid flow channel 4011 is provided in a driving substrate, the driving substrate is bonded to a chip structure to form a second liquid flow channel, and the first liquid flow channel and the second liquid flow channel are connected through the bonding frame to form a complete liquid flow channel structure. The liquid inlet pipe and the liquid outlet pipe are respectively connected to the liquid inlet and the liquid outlet of the driving substrate, providing a convenient docking method. Moreover, the liquid inlet pipe and the driving substrate, as well as the liquid outlet pipe and the driving substrate are bonded and fixed by the bottom filling glue to meet the sealing reliability requirements for long-term use. The formation of a complete liquid flow channel structure and the fixed connection of the liquid inlet pipe and the liquid outlet pipe can match the requirements of the existing packaging process, thereby enabling mass production. The introduction of cooling liquid and the circulation through the second liquid flow channel can dissipate heat from the bottom of the chip structure. In addition, the circulation of the cooling liquid also flows through the first liquid flow channel in the driving substrate, and can also dissipate heat for the driving substrate.

[0036] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0037] Figures 1 to 11 It is a structural schematic diagram of each step of the method for forming a packaging structure in an embodiment of the present invention.

[0038] In an embodiment of the present invention, each step of the method for forming a packaging structure may be a process implemented on a wafer, a process implemented on a single-layer chip, or a process implemented on a multi-layer stacked chip. In a preferred embodiment, each step of the method for forming a packaging structure is a process implemented on a multi-layer stacked chip.

[0039] Please refer to Figure 1 , a wafer (not shown) is provided, on which a plurality of chip structures 100 are provided.

[0040] In this embodiment, the chip structure 100 is a multi-layer stacked chip, including: 1 logic chip 101 and 4 memory chips 102 (such as DRAM1\DRAM2\DRAM3\DRAM4), and the 5 chips are stacked in sequence and supported by a supporting substrate 103.

[0041] In other embodiments, the chip structure may include more than 5 chips or less than 5 chips, and the types of chips included may also be flexibly selected based on actual needs.

[0042] Please refer to Figure 2 An electrical interconnection layer is formed on a surface of the chip structure 100 away from the supporting substrate 103 , and the electrical interconnection layer is electrically connected to the chip structure 100 .

[0043] In this embodiment, the step of forming the electrical interconnection layer includes: forming a plurality of pads 201 on the chip structure 100 , wherein the pads 201 are electrically connected to the chip structure 100 .

[0044] In this embodiment, the step of forming the electrical interconnection layer also includes: forming a dielectric layer 202 on the chip structure 100, wherein the dielectric layer 202 is located on the surface of the chip structure 100 and covers the pad 201; forming a passivation layer 203 on the dielectric layer 202; forming a buffer layer 204 on the passivation layer 203; wherein the dielectric layer 302, the passivation layer 203 and the buffer layer 204 expose a portion of the surface of the pad 201.

[0045] In this embodiment, the method for forming the pad 201 is to first deposit a material layer (not shown) to form the pad 201, and then perform a graphic etching process on it to form the pad 201; the method for forming the dielectric layer 202, the passivation layer 203 and the buffer layer 204 is also to first deposit a corresponding material layer (not shown), and then perform a graphic etching process on it to form the dielectric layer 202, the passivation layer 203 and the buffer layer 204.

[0046] In this embodiment, the dielectric layer 202, the passivation layer 203 and the buffer layer 204 are all made of insulating materials, wherein the dielectric layer 202 may be made of silicon oxide, the passivation layer 203 may be made of silicon nitride, and the buffer layer 204 may be made of polyimide.

[0047] In this embodiment, after the electrical interconnection layer is formed, a plurality of bonding bumps and a bonding frame are formed on the surface of the electrical interconnection layer, the bonding bumps are electrically connected to the electrical interconnection layer, and the bonding bumps are electrically connected to the chip structure 100 through the electrical interconnection layer. For the specific formation process, please refer to Figures 3 to 7 .

[0048] Please refer to Figure 3 An adhesion layer 301 and a seed layer 302 located on the adhesion layer 301 are formed on the surface of the chip structure 100 .

[0049] In this embodiment, the adhesion layer 301 is formed on the exposed surfaces of the pad 201 , the dielectric layer 202 , the passivation layer 203 , and the buffer layer 204 by a sputtering process or other metal deposition processes.

[0050] In this embodiment, the material of the adhesion layer 301 may be titanium or titanium tungsten.

[0051] In this embodiment, the seed layer 302 is formed on the adhesion layer 301 by a sputtering process.

[0052] In this embodiment, the seed layer 302 is made of copper.

[0053] It should be noted that, in this embodiment, the adhesion layer 301 and the seed layer 302 are the under bump metallization (UBM) layer prepared before the bonding bump and the bonding frame are made. The under bump metallization layer is a metal transition layer between the pad 201 and the bonding bump, and mainly plays the role of adhesion and diffusion barrier.

[0054] Please refer to Figure 4 and Figure 5 , Figure 5 It is a top view of the several patterned openings in the photoresist layer. After the adhesion layer 301 and the seed layer 302 are formed, a photoresist layer 303 is formed on the electrical interconnection layer. The photoresist layer 303 has several patterned openings 304 therein.

[0055] It should be noted that, in this embodiment, the process steps for forming the photoresist layer 303 include coating, pre-baking, exposure, development, and post-baking. Since there are many factors affecting the thick photoresist lithography of positive photoresist, the thick photoresist needs to be coated with a photoresist material that conforms to rheology and supports a single spin coating operation thickness of 40 to 100 μm. In order to improve the verticality of the side walls of the bonding bumps and the bonding frame formed subsequently, the thickness of the photoresist layer 303 needs to be greater than the height of the bonding bumps and the bonding frame, and a photoresist material with a thickness of about 80 μm or more is coated at one time.

[0056] Please refer to Figure 6 and Figure 7 , Figure 7 It is a top view of the bonding bump and the bonding frame. The bonding bump 305 and the bonding frame 306 are formed in the corresponding patterned opening 304. After the bonding bump 305 and the bonding frame 306 are formed, the photoresist layer 303 is removed.

[0057] In this embodiment, the bonding bump 305 is electrically connected to the corresponding pad 201 , that is, the bonding bump 305 is electrically connected to the electrical interconnection layer.

[0058] In this embodiment, the bonding bumps 305 and the bonding frames 306 are formed in the corresponding patterned openings 304 by electroplating.

[0059] In this embodiment, the bonding bumps 305 and the bonding frame 306 are both made of copper.

[0060] In this embodiment, the bonding bumps 305 and the bonding frame 306 are formed simultaneously to simplify the process and improve the process efficiency.

[0061] It should be noted that, in this embodiment, the bonding bump 305 is electrically connected to the pad 201, and its function is to transmit electrical signals; the bonding frame 306 is a ring-shaped frame structure, which does not need to bear the function of electrical connection, and is used as a supporting and fixing function when connected to the subsequent drive substrate, and a connecting pipe for the circulation of cooling liquid. The heights of the formed bonding bump 305 and the bonding frame 306 need to be consistent, so that the subsequent drive substrates provided at the same time can be bonded and connected.

[0062] In this embodiment, after forming the bonding bump 305 and the bonding frame 306, the surfaces thereof may be electroplated with nickel to form a uniform nickel barrier layer (not shown) to prevent copper diffusion and improve solderability. After forming the nickel barrier layer, a solder layer (not shown) is electroplated on the surface thereof for subsequent soldering steps.

[0063] In other embodiments, the nickel barrier layer is electroplated or not according to application requirements, and the nickel barrier layer can be directly omitted in some copper column products.

[0064] In this embodiment, the photoresist layer 303 may be removed by using chemical solvent or plasma cleaning.

[0065] Please continue to refer to Figure 6 After removing the photoresist layer 303, the seed layer 302 and the adhesion layer 301 exposed on the surface of the electrical interconnection layer are removed.

[0066] In this embodiment, an etching solution is used to remove the excess adhesion layer 301 and the seed layer 302, and it is ensured that the etching solution does not damage the already formed bonding bumps 305, the bonding frame 306, and the solder layer.

[0067] Please refer to Figure 8 , providing a driving substrate 400 , wherein the driving substrate 400 has a first liquid flow channel 401 , and a surface of the driving substrate 400 exposes a liquid inlet 4011 and a liquid outlet 4012 of the first liquid flow channel 401 .

[0068] It should be noted that, in the present embodiment, the surface of the driving substrate 400 also has bonding points corresponding to the bonding bumps 305 and the bonding frame 306, wherein the bonding points for bonding with the bonding frame 306 do not have the function of electrical connection, and are only used to bond the bonding frame 306 to the driving substrate 400 for fixed connection.

[0069] Please refer to Fig. 9 , the chip structure 100 is flipped over and bonded to the driving substrate 400, the driving substrate 400 is bonded to the bonding bumps 305 and the bonding frame 306 respectively, a second liquid flow channel 402 is formed between the chip structure 100 and the driving substrate 400 after the bonding, and the bonding frame 306 is connected to the first liquid flow channel 401, specifically, the bonding frame 306 is connected to the liquid inlet 4011 and the liquid outlet 4012 of the first liquid flow channel 401 as a connecting pipe.

[0070] In this embodiment, the temperature during bonding is usually set at about 245°C, and the bonding bumps 305 and the bonding frame 306 are melted to form a stable connection with the drive substrate 400. The bonding frame 306 is connected to the first liquid flow channel 401 contained in the drive substrate 400 as a connecting pipe, so that the first liquid flow channel 401 and the second liquid flow channel 402 form a complete liquid flow channel structure. In this embodiment, a cooling liquid is introduced and circulated through the second liquid flow channel 402, so that the chip structure 100 can dissipate heat from the bottom.

[0071] Please refer to Fig.10 , forming a packaging layer 500 , wherein the packaging layer 500 covers the chip structure 100 , the electrical interconnection layer, the bonding bumps 305 , the bonding frame 306 , and a portion of the driving substrate 400 .

[0072] In this embodiment, the encapsulation layer 500 wraps the supporting substrate 103 of the chip structure 100. In another embodiment, a thinning process is performed to remove the encapsulation layer material on the top of the chip structure 100 until the supporting substrate 103 is exposed, which is more conducive to the subsequent heat dissipation of the chip structure 100. In one embodiment, the thinning process can adopt a chemical mechanical polishing process.

[0073] In this embodiment, the material of the encapsulation layer 500 is epoxy molding compound. It is a commonly used semiconductor encapsulation material, mainly used to protect the chip structure 100 from physical damage, chemical corrosion and environmental factors; at the same time, it can fully fill the gap of the device, which helps to improve the reliability and stability of the device. The encapsulation layer 500 is formed by heating materials such as epoxy resin to a molten state and injecting them, and then cooling and solidifying them to enhance the stability of the connection and protect the solder joints.

[0074] Please refer to Fig.11 After forming the packaging layer 500 , a reinforcement ring 600 is bonded on the driving substrate 400 , and the reinforcement ring 600 surrounds the chip structure 100 , the electrical interconnection layer, the bonding bumps 305 and the bonding frame 306 .

[0075] In this embodiment, the reinforcing ring 600 mainly functions to increase the mechanical strength of the packaging structure and suppress the warping phenomenon that occurs during packaging.

[0076] Please continue to refer to Fig.11, providing a liquid inlet tube 701 and a liquid outlet tube 702; based on the bottom filling glue 800, the liquid inlet tube 701 and the driving substrate 400, as well as the liquid outlet tube 702 and the driving substrate 400 are respectively bonded and fixed, and the liquid inlet tube 701 after bonding and fixing is connected to the liquid inlet port 4011, and the liquid outlet tube 702 is connected to the liquid outlet port 4012.

[0077] The first liquid flow channel 4011 in the driving substrate 400 and the second liquid flow channel 402 formed by bonding the driving substrate 400 to the chip structure 100 are connected through the bonding frame 306 as a connecting pipe to form a complete liquid flow channel structure. The liquid inlet pipe 701 and the liquid outlet pipe 702 are respectively connected to the liquid inlet port 4011 and the liquid outlet port 4012 of the driving substrate 400, providing a convenient docking method. Moreover, the liquid inlet pipe 701 and the driving substrate 400, as well as the liquid outlet pipe 702 and the driving substrate 400 are bonded and fixed by the bottom filling glue 800 to meet the sealing reliability requirements for long-term use. The formation of a complete liquid flow channel structure and the fixed connection of the liquid inlet pipe 701 and the liquid outlet pipe 702 can match the requirements of the existing packaging process, and thus can achieve mass production. In addition, the circulation of the cooling liquid also flows through the first liquid flow channel 401 in the driving substrate 400, and can also dissipate heat for the driving substrate 500.

[0078] It should be noted that the underfill 800 is an epoxy resin material used to fill the gaps, aiming to enhance mechanical stability and improve its resistance to thermal stress. The process flow generally includes three steps of dispensing, pre-curing and full curing to fill the gaps and enhance the reliability of the connection.

[0079] In this embodiment, before the reinforcing ring 600 is bonded to the driving substrate 400, the reinforcing ring 600 is further opened; the liquid inlet pipe 701 and the liquid outlet pipe 702 penetrate the reinforcing ring 600 and are fixedly connected to the driving substrate 400. By passing the liquid inlet pipe 701 and the liquid outlet pipe 702 through the reinforcing ring 600, the reinforcing ring 600 can provide a more stable limit for the liquid inlet pipe 701 and the liquid outlet pipe 702, thereby effectively reducing the problem of loosening of the bonding position of the liquid inlet pipe 701 and the liquid outlet pipe 702 with the driving substrate 400 and causing leakage.

[0080] It should be noted that, in this embodiment, since the reinforcement ring 600, the liquid inlet pipe 701 and the liquid outlet pipe 702 have formed an integral structure when being bonded and fixed to the driving substrate 400, the bottom filling glue simultaneously bonds and fixes the reinforcement ring 600, the liquid inlet pipe 701 and the liquid outlet pipe 702 to the driving substrate 400.

[0081] In other embodiments, the reinforcement ring, the liquid inlet pipe and the liquid outlet pipe may also be an integrally formed structure.

[0082] In this embodiment, the material of the liquid inlet pipe 701 and the liquid outlet pipe 702 includes: metal material, specifically carbon steel, copper, stainless steel, aluminum alloy or titanium. The material of the liquid inlet pipe 701 and the liquid outlet pipe 702 is metal material, so that it can have good mechanical strength.

[0083] Accordingly, a packaging structure is also provided in the embodiment of the present invention, please continue to refer to Fig.11 , including: a chip structure 100, the chip structure 100 is a multi-layer stacked chip, including: a logic chip 101 and four memory chips 102, the five chips are stacked in sequence and supported by a supporting substrate 103; an electrical interconnection layer, the electrical interconnection layer is located on the surface of the chip structure 100, and the electrical interconnection layer is electrically connected to the chip structure 100; a plurality of bonding bumps 305, the bonding bumps are located on the electrical interconnection layer, the bonding bumps 305 are electrically connected to the electrical interconnection layer, and the bonding bumps 305 are electrically connected to the chip structure 100 through the electrical interconnection layer; a bonding frame 306, the bonding frame 306 is located on the electrical interconnection layer; a driving substrate 400, the driving substrate 400 A first liquid flow channel 401 is provided in the substrate 400, and a liquid inlet 4011 and a liquid outlet 4012 of the first liquid flow channel 401 are exposed on the surface of the driving substrate 400, and the driving substrate 400 is bonded to the bonding bump 305 and the bonding frame 306 respectively, and the bonding frame 306 is connected to the first liquid flow channel 401; a liquid inlet pipe 701, and the liquid inlet pipe 701 is connected to the liquid inlet 4011; a liquid outlet pipe 702, and the liquid outlet pipe 702 is connected to the liquid outlet 4012; and an underfill 800, and the underfill 800 is used to bond and fix the liquid inlet pipe 701 and the driving substrate 400, and the liquid outlet pipe 702 and the driving substrate 400.

[0084] The drive substrate 400 is bonded to the chip structure 100 to form a second liquid flow channel 402, and the second liquid flow channel 402 is connected to the first liquid flow channel 401 in the drive substrate 400 through the bonding frame 306 as a connecting pipe to form a complete liquid flow channel structure. The liquid inlet pipe 701 and the liquid outlet pipe 702 are respectively connected to the liquid inlet port 4011 and the liquid outlet port 4012 of the drive substrate 400, providing a convenient docking method. Moreover, the liquid inlet pipe 701 and the drive substrate 400, as well as the liquid outlet pipe 702 and the drive substrate 400 are bonded and fixed by the bottom filling glue 800 to meet the sealing reliability requirements for long-term use. The formation of a complete liquid flow channel structure and the fixed connection of the liquid inlet pipe 701 and the liquid outlet pipe 702 can match the requirements of the existing packaging process, and thus can achieve mass production. In addition, the circulation of the cooling liquid also flows through the first liquid flow channel 401 in the drive substrate 400, and can also dissipate heat for the drive substrate 400.

[0085] In this embodiment, the packaging structure further includes a reinforcement ring 600, which is located on the driving substrate 400 and surrounds the chip structure 200, the electrical interconnection layer, the bonding bumps 305 and the bonding frame 306. The reinforcement ring 600 can increase the overall mechanical strength of the packaging structure and suppress the warping phenomenon that occurs during packaging.

[0086] In this embodiment, the liquid inlet pipe 701 and the liquid outlet pipe 702 pass through the reinforcement ring 600 and are fixedly connected to the driving substrate 400. By passing the liquid inlet pipe 701 and the liquid outlet pipe 702 through the reinforcement ring 600, the reinforcement ring 600 can provide a more stable limit for the liquid inlet pipe 701 and the liquid outlet pipe 702, thereby effectively reducing the problem of loosening of the bonding position of the liquid inlet pipe 701 and the liquid outlet pipe 702 and the driving substrate 400 to cause leakage.

[0087] In this embodiment, the packaging structure further includes: a packaging layer 500, the packaging layer 500 is located on the chip structure 100 and the driving substrate 400 and the packaging layer 500 covers the chip structure 100, the electrical interconnection layer, the bonding bumps 305, the bonding frame 306, and part of the driving substrate 400. The material of the packaging layer 500 is epoxy molding compound. It is a commonly used semiconductor packaging material, mainly used to protect the chip structure 100 from physical damage, chemical corrosion and environmental factors, and can fully fill the gap of the device, which helps to improve the reliability and stability of the device. The packaging layer 700 is formed by heating materials such as epoxy resin to a molten state, then injecting them into a mold, and cooling and solidifying them.

[0088] In this embodiment, the electrical interconnection layer includes: a plurality of pads 201 , the pads 201 are electrically connected to the chip structure 100 , and the bonding bumps 305 are electrically connected to corresponding pads 201 .

[0089] In this embodiment, the material of the liquid inlet pipe 701 and the liquid outlet pipe 702 includes: metal material, specifically carbon steel, copper, stainless steel, aluminum alloy or titanium. The material of the liquid inlet pipe 701 and the liquid outlet pipe 702 is metal material, so that it can have good mechanical strength.

[0090] It should be understood that "one embodiment" or "an embodiment" mentioned throughout the specification means that specific features, structures or characteristics related to the embodiment are included in at least one embodiment of the present disclosure. Therefore, "in one embodiment" or "in an embodiment" appearing throughout the specification does not necessarily refer to the same embodiment. In addition, these specific features, structures or characteristics can be combined in one or more embodiments in any suitable manner. It should be understood that in the various embodiments of the present disclosure, the size of the serial number of the above-mentioned processes does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present disclosure. The serial numbers of the embodiments of the present disclosure are for description only and do not represent the advantages and disadvantages of the embodiments.

[0091] It should be noted that, in this article, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprises a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element.

[0092] The above is only an embodiment of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any person skilled in the art who is familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A packaging structure, characterized in that: include: Chip structure; An electrical interconnection layer, the electrical interconnection layer is located on the surface of the chip structure, and the electrical interconnection layer is electrically connected to the chip structure; A plurality of bonding bumps, wherein the bonding bumps are located on the electrical interconnection layer, the bonding bumps are electrically connected to the electrical interconnection layer, and the bonding bumps are electrically connected to the chip structure through the electrical interconnection layer; a bonding frame, the bonding frame being located on the electrical interconnect layer; A driving substrate, wherein the driving substrate has a first liquid flow channel, a liquid inlet and a liquid outlet of the first liquid flow channel are exposed on a surface of the driving substrate, the driving substrate is bonded to the bonding bump and the bonding frame respectively, and the bonding frame is in communication with the first liquid flow channel; A liquid inlet pipe, the liquid inlet pipe is connected to the liquid inlet; a liquid outlet pipe, the liquid outlet pipe being connected to the liquid outlet; The bottom filling glue is used to bond and fix the liquid inlet pipe and the driving substrate, and the liquid outlet pipe and the driving substrate.

2. The packaging structure according to claim 1, characterized in that: The chip structure is bonded to the driving substrate to form a second liquid flow channel, and the second liquid flow channel is connected to the first liquid flow channel in the driving substrate through the bonding frame.

3. The packaging structure according to claim 1, characterized in that: Also includes: A reinforcement ring is located on the driving substrate and surrounds the chip structure, the electrical interconnection layer, the bonding bumps and the bonding frame.

4. The packaging structure according to claim 3, characterized in that: The liquid inlet pipe and the liquid outlet pipe penetrate through the reinforcement ring and are fixedly connected to the driving substrate.

5. The packaging structure according to claim 1, characterized in that: Also includes: A packaging layer is located on the chip structure and the driving substrate and covers the chip structure, the electrical interconnection layer, the bonding bumps, the bonding frame, and a portion of the driving substrate.

6. The packaging structure according to claim 1, characterized in that: The electrical interconnection layer includes: a plurality of pads, the pads are electrically connected to the chip structure, and the bonding bumps are electrically connected to the corresponding pads.

7. The packaging structure according to claim 1, characterized in that: The material of the liquid inlet pipe includes: metal material; the material of the liquid outlet pipe includes: metal material; the metal material includes: carbon steel, copper, stainless steel, aluminum alloy or titanium.

8. A method for forming a packaging structure, characterized in that: include: Providing chip structure; forming an electrical interconnection layer on a surface of the chip structure, wherein the electrical interconnection layer is electrically connected to the chip structure; Forming a plurality of bonding bumps and a bonding frame on the electrical interconnection layer, wherein the bonding bumps are electrically connected to the electrical interconnection layer, and the bonding bumps are electrically connected to the chip structure through the electrical interconnection layer; Providing a driving substrate, wherein the driving substrate has a first liquid flow channel, and a surface of the driving substrate exposes a liquid inlet and a liquid outlet of the first liquid flow channel; Bonding the driving substrate to the bonding bumps and the bonding frame respectively, wherein the bonding frame is in communication with the first liquid flow channel; Provide a liquid inlet pipe and a liquid outlet pipe; The liquid inlet pipe and the driving substrate, as well as the liquid outlet pipe and the driving substrate are bonded and fixed respectively based on the bottom filling glue, and the liquid inlet pipe and the liquid outlet are connected to the liquid inlet and the liquid outlet after bonding and fixing.

9. The method for forming a package structure according to claim 8, wherein: The chip structure is flipped over and bonded to the drive substrate, a second liquid flow channel is formed between the bonded chip structure and the drive substrate, and the second liquid flow channel is connected to the first liquid flow channel in the drive substrate through the bonding frame.

10. The method for forming a package structure according to claim 8, wherein: Before bonding and fixing the liquid inlet pipe and the liquid outlet pipe, the method further includes bonding a reinforcement ring on the drive substrate, wherein the reinforcement ring surrounds the chip structure, the electrical interconnection layer, the bonding bumps and the bonding frame.

11. The method for forming a package structure according to claim 10, wherein: Before the reinforcement ring is bonded to the driving substrate, the method further includes: performing an opening process on the reinforcement ring; and the liquid inlet pipe and the liquid outlet pipe penetrate through the reinforcement ring and are fixedly connected to the driving substrate.

12. The method for forming a package structure according to claim 8, wherein: Before the liquid inlet pipe and the liquid outlet pipe are bonded and fixed, the method further includes: forming a packaging layer, wherein the packaging layer covers the chip structure, the electrical interconnection layer, the bonding bumps, the bonding frame, and a portion of the drive substrate.

13. The method for forming a package structure according to claim 8, wherein: The electrical interconnection layer includes: a plurality of pads, the pads are electrically connected to the chip structure, and the bonding bumps are electrically connected to the corresponding pads.

14. The method for forming a package structure according to claim 8, wherein: The bonding bumps and the bonding frame are formed synchronously.

15. The method for forming a package structure according to claim 15, wherein: The method for forming the bonding bump and the bonding frame comprises: forming a photoresist layer on the electrical interconnection layer, wherein the photoresist layer has a plurality of patterned openings; forming the bonding bump and the bonding frame in the corresponding patterned openings; and removing the photoresist layer after forming the bonding bump and the bonding frame.

16. The method for forming a package structure according to claim 15, wherein: The bonding bumps and the bonding frame are formed in the corresponding patterned openings by using an electroplating process.

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