Broadband current multiplexing low-noise amplification structure

Abstract

The invention provides a broadband current multiplexing low-noise amplification structure, and belongs to the technical field of signal transmission equipment.The broadband current multiplexing low-noise amplification structure comprises a transistor M1, a transistor M2, a first coupling line module, a capacitor C2 and a capacitor CB1, the transistor M1 and the transistor M2 are cascaded and used for achieving signal amplification, and the first coupling line module is coupled with the capacitor C2; the first coupling line module comprises a transmission line TL1 and a transmission line TL2 which are close to each other, the transmission line TL2 is connected between the drain electrode of the transistor M1 and the grid electrode of the transistor M2, and the transmission line TL1 is connected between the drain electrode of the transistor M1 and the source electrode of the transistor M2; the capacitor C2 is connected between the transmission line TL2 and the drain electrode of the transistor M1, and the capacitor CB1 is connected between the source electrode of the transistor M2 and the ground.

Description

Technical Field

[0001] The present invention relates to the technical field of signal transmission equipment, and in particular to a broadband current multiplexing low-noise amplification structure. Background Art

[0002] With the development of 5G communication technology and the growing demand for large-scale data transmission, millimeter wave communication technology has become the best choice due to its extremely high bandwidth and ultra-fast transmission speed. However, the signal coverage and stability issues in the millimeter wave band need to be urgently addressed, especially efficient antenna beam management and optimization through phased array antennas. In this context, RF front-end chips have become a key component for achieving efficient signal transmission. 5G millimeter wave phased array technology requires multiple RF front-end chips to support multi-band operations, improve signal processing capabilities, and realize functions such as beamforming and tracking. However, the high power consumption caused by the high power amplifier (PA) and low noise amplifier (LNA) of the RF front-end chip has become a technical challenge that needs to be solved urgently.

[0003] In the existing RF front-end chip design, the power amplifier undertakes the important task of amplifying weak signals to a sufficiently large signal output, so its power consumption is indispensable. On the other hand, as a key component of the front-end reception, the low-noise amplifier is crucial to improving the signal reception quality of the system. A high-power noise amplifier will directly affect the overall performance and energy efficiency of the system. However, with the development of 5G communication technology, the market's requirements for power consumption and energy efficiency are increasing, and existing technologies are difficult to meet these requirements. Therefore, designing a new low-noise amplifier that can simultaneously improve performance and reduce power consumption has become the focus of current research and development. Summary of the invention

[0004] In view of the above problems, an embodiment of the present invention provides a broadband current multiplexing low-noise amplifier structure, which includes: a transistor M1, a transistor M2, a first coupling line module, a capacitor C2 and a capacitor CB1. The transistor M1 and the transistor M2 are cascaded and used to amplify the signal. The first coupling line module includes a transmission line TL1 and a transmission line TL2 that are close to each other. The transmission line TL2 is connected between the drain of the transistor M1 and the gate of the transistor M2, the transmission line TL1 is connected between the drain of the transistor M1 and the source of the transistor M2, the capacitor C2 is connected between the transmission line TL2 and the drain of the transistor M1, and the capacitor CB1 is connected between the source of the transistor M2 and the ground.

[0005] In one embodiment, the broadband current multiplexing low-noise amplifier structure also includes a transistor M3, a second coupling line module, a capacitor C4 and a capacitor CB2, the transistor M3 is cascaded with the transistor M2, the second coupling line module includes a transmission line TL3 and a transmission line TL4 close to each other, the transmission line TL4 is connected between the drain of the transistor M2 and the gate of the transistor M3, the transmission line TL3 is connected between the drain of the transistor M2 and the source of the transistor M3, the capacitor C4 is connected between the transmission line TL4 and the drain of the transistor M2, and the capacitor CB2 is connected between the source of the transistor M3 and ground.

[0006] In one embodiment, the gate of the transistor M1 is used to connect to a signal input terminal, an input matching circuit is provided between the gate of the transistor M1 and the signal input terminal, and the input matching circuit is used to optimize input matching.

[0007] In one embodiment, the input matching circuit includes a capacitor C0 and an inductor TL0 connected in series.

[0008] In one embodiment, the drain of the transistor M3 is used to connect to the signal output end, and an output matching circuit is provided between the drain of the transistor M3 and the signal output end, and the output matching circuit is used to optimize the output matching.

[0009] In one embodiment, the output matching circuit includes an inductor L2, an inductor L3, a capacitor C9, a capacitor C10 and an inductor TL5, wherein the inductor L2, the capacitor C9 and the inductor TL5 are connected in series in sequence, the inductor L2 is connected to the drain of the transistor M3, the inductor TL5 is connected to the signal output end, the first end of the inductor L3 is connected between the inductor L2 and the capacitor C9, the second end of the inductor L3 is grounded, the first end of the capacitor C10 is connected between the capacitor C9 and the inductor TL5, and the other end of the capacitor C10 is grounded.

[0010] In one embodiment, the broadband current multiplexing low-noise amplifier structure also includes a bias network, which is respectively connected to the gates of the transistor M1, the transistor M2 and the transistor M3, and is used to provide a bias voltage for the gates of the transistor M1, the transistor M2 and the transistor M3.

[0011] In one embodiment, the bias network includes: capacitor C1, capacitor C3, capacitor C5, resistor R0, resistor R1 and resistor R2, the first end of the resistor R0 is connected to the gate of the transistor M1, the second end of the resistor R0 is used for inputting voltage, the first end of the capacitor C1 is connected to the second end of the resistor R0, the second end of the capacitor C1 is grounded, the first end of the resistor R1 is connected to the gate of the transistor M2, the second end of the resistor R1 is used for inputting voltage, the first end of the capacitor C3 is connected to the second end of the resistor R1, the second end of the capacitor C3 is grounded, the first end of the resistor R2 is connected to the gate of the transistor M3, the second end of the resistor R2 is used for inputting voltage, the first end of the capacitor C5 is connected to the second end of the resistor R2, and the second end of the capacitor C5 is grounded.

[0012] In one embodiment, the source of the transistor M1 is connected to the ground via a source inductor TLS1.

[0013] In one embodiment, a feedback circuit is provided between the drain of the transistor M2 and the gate of the transistor M3 , and the feedback circuit includes a resistor R3 , an inductor L1 and a capacitor C6 , and the resistor R3 , the inductor L1 and the capacitor C6 are connected in series.

[0014] The above one or more technical solutions in the embodiments of the present application have at least one or more of the following technical effects: The broadband current multiplexing low-noise amplifier structure provided in the embodiment of the present invention realizes a positive feedback design based on coupling lines by innovatively introducing a first coupling line module between the cascaded transistor M1 and the transistor M2. This design enables part of the signal that was originally lost due to leakage to be re-amplified through the coupling line and sent back to the signal transmission path, thereby effectively reducing the loss in signal transmission and ensuring the quality of signal transmission. This design can not only broaden the bandwidth of the low-noise amplifier and realize ultra-wideband design, but also reduce the number of RF front-end chips without deteriorating the performance of the amplifier, thereby effectively reducing system power consumption and improving the energy efficiency and performance of the overall system.

[0015] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention, it can be implemented according to the contents of the specification. In order to make the above and other purposes, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0017] Figure 1 is a schematic diagram of a circuit module in an embodiment of the present invention; Figure 2 is a schematic diagram of a circuit module in an embodiment of the present invention; Figure 3 is an overall circuit schematic diagram in an embodiment of the present invention; Figure 4 A gain simulation result diagram of a conventional structure and a broadband current multiplexing low-noise amplifier structure in an embodiment of the present invention; Figure 5 A noise coefficient simulation result diagram of a conventional structure and a broadband current multiplexing low noise amplifier structure in an embodiment of the present invention; Figure 6 It is a diagram showing the input return loss simulation results of the traditional structure and the broadband current multiplexing low noise amplifier structure in the embodiment of the present invention; Figure 7 It is a diagram showing the output return loss simulation results of the conventional structure and the broadband current multiplexing low noise amplification structure in the embodiment of the present invention; Figure 8 This is a diagram showing the stability coefficient simulation results of the traditional structure and the broadband current multiplexing low-noise amplifier structure in the embodiment of the present invention.

[0018] Explanation of reference numerals: 100, first coupled line module; 200, second coupled line module; 300, input matching circuit; 400, output matching circuit; 500, bias network. DETAILED DESCRIPTION

[0019] The overall idea of ​​the technical solution provided by the present invention is as follows: See also Figure 1 A broadband current multiplexing low-noise amplifier structure includes: a transistor M1, a transistor M2, a first coupling line module 100, a capacitor C2 and a capacitor CB1. The transistor M1 and the transistor M2 are cascaded and used to amplify the signal. The first coupling line module 100 includes a transmission line TL1 and a transmission line TL2 close to each other. The transmission line TL2 is connected between the drain of the transistor M1 and the gate of the transistor M2, the transmission line TL1 is connected between the drain of the transistor M1 and the source of the transistor M2, the capacitor C2 is connected between the transmission line TL2 and the drain of the transistor M1, and the capacitor CB1 is connected between the source of the transistor M2 and the ground.

[0020] The transistors M1 and M2 are connected in a cascade manner, with the drain of the transistor M1 connected to the gate of the transistor M2, forming a basic cascade amplifier structure for signal amplification.

[0021] The first coupling line module 100 includes two transmission lines TL1 and TL2 close to each other. The transmission line TL2 connects the drain of the transistor M1 and the gate of the transistor M2, while the transmission line TL1 connects the drain of the transistor M1 and the source of the transistor M2. Specifically, when the signal is transmitted between the transistor M1 and the transistor M2, since the source of the transistor M2 is grounded, part of the signal may leak and flow to the ground, resulting in loss. In order to solve this problem, the first coupling line module 100 is designed to capture this part of the leaked signal, re-amplify it and send it back to the signal transmission path. The first coupling line module 100 includes two transmission lines TL1 and TL2 close to each other. The transmission line TL2 connects the drain of the transistor M1 and the gate of the transistor M2, while the transmission line TL1 connects the drain of the transistor M1 and the source of the transistor M2. When the signal is transmitted in the link, there will always be part of the signal flowing to the ground through the capacitor CB1 due to leakage, causing inevitable loss. The design we proposed applies the mutual inductance principle of the coupling line. This part of the leaked signal is amplified to the signal transmission path through the first coupling line module 100, which is equivalent to the signal that would originally leak being re-amplified to the signal transmission path for continued transmission. This can ensure the transmission quality of the signal. From the simulation results, the positive feedback design based on the coupling line can significantly broaden the bandwidth of the low-noise amplifier and achieve an ultra-wideband design.

[0022] In summary, in a broadband current multiplexing low-noise amplifier structure provided by the present application, a positive feedback design based on coupling lines is realized by innovatively introducing a first coupling line module 100 between the cascaded transistor M1 and the transistor M2. This design enables part of the signal that was originally lost due to leakage to be re-amplified through the coupling line and sent back to the signal transmission path, thereby effectively reducing the loss in signal transmission and ensuring the quality of signal transmission. This design can not only broaden the bandwidth of the low-noise amplifier and realize ultra-wideband design, but also reduce the number of RF front-end chips without deteriorating the performance of the amplifier, thereby effectively reducing system power consumption and improving the energy efficiency and performance of the overall system.

[0023] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0024] See also Figure 2 A broadband current multiplexing low noise amplifier structure also includes a transistor M3, a second coupling line module 200, a capacitor C4 and a capacitor CB2. The transistor M3 is cascaded with the transistor M2. The second coupling line module 200 includes a transmission line TL3 and a transmission line TL4 close to each other. The transmission line TL4 is connected between the drain of the transistor M2 and the gate of the transistor M3. The transmission line TL3 is connected between the drain of the transistor M2 and the source of the transistor M3. The capacitor C4 is connected between the transmission line TL4 and the drain of the transistor M2. The capacitor CB2 is connected between the source of the transistor M3 and the ground. Specifically, the transistor M1 is used as a primary amplifier to receive the input signal and perform preliminary amplification. The transistor M2 and the transistor M3 are used as cascade amplifiers and work together with the transistor M1 to further improve the gain. The transmission line L4 connects the drain of the transistor M2 and the gate of the transistor M3 to provide an input signal for the transistor M3. The transmission line TL3 connects the drain of the transistor M2 and the source of the transistor M3 , and plays a role of signal feedback, thereby ensuring that the signal is effectively used during the transmission process between the transistor M2 and the transistor M3 .

[0025] Furthermore, capacitors CB1 and CB2 are crucial in the current reuse structure. The two capacitors are equivalent to the radio frequency ground and are mainly used to isolate the direct current from the ground.

[0026] See also Figure 2 The gate of transistor M1 is used to connect to the signal input terminal, and an input matching circuit 300 is provided between the gate of transistor M1 and the signal input terminal, and the input matching circuit 300 is used to optimize the input matching. The input matching circuit 300 is mainly used to improve the transmission efficiency of the input signal, minimize the signal reflection, and ensure that the signal can be fully coupled before entering the transistor M1. Good input matching can improve the gain and bandwidth of the entire amplifier and reduce noise and distortion.

[0027] See also Figure 3, the input matching circuit 300 includes a capacitor C0 and an inductor TL0 connected in series. Specifically, a tuning network is formed by connecting the capacitor C0 and the inductor TL0 in series. The operating frequency of the network depends on the values ​​of the capacitor and the inductor. Adjusting the values ​​of the capacitor C0 and the inductor TL0 can help achieve the optimal matching of the input signal at the target frequency. Within the target frequency range, the capacitor C0 and the inductor TL0 form a low impedance channel, so that the signal is efficiently transmitted to the post-amplifier. At this time, the reflection of the input signal is minimized, which helps to increase the gain and reduce the distortion. During the design process, the specific values ​​of the capacitor C0 and the inductor TL0 need to be carefully selected to ensure appropriate impedance matching within the operating frequency band. This usually requires adjustment through simulation and experiment.

[0028] See also Figure 2 The drain of the transistor M3 is used to connect to the signal output terminal, and an output matching circuit 400 is provided between the drain of the transistor M3 and the signal output terminal, and the output matching circuit 400 is used to optimize the output matching. Specifically, the output matching circuit 400 is mainly used to optimize the performance of the output signal, ensure that the signal is effectively transmitted to the load and minimize reflection and loss.

[0029] See also Figure 3 The output matching circuit 400 includes an inductor L2, an inductor L3, a capacitor C9, a capacitor C10 and an inductor TL5. The inductor L2, the capacitor C9 and the inductor TL5 are connected in series in sequence. The inductor L2 is connected to the drain of the transistor M3, the inductor TL5 is connected to the signal output terminal, the first end of the inductor L3 is connected between the inductor L2 and the capacitor C9, the second end of the inductor L3 is grounded, the first end of the capacitor C10 is connected between the capacitor C9 and the inductor TL5, and the other end of the capacitor C10 is grounded. Specifically, the combination of the inductors L2 and L3 is used to form an output matching network to ensure impedance matching with the load, thereby achieving maximum power transmission. The capacitor C9 is used to short-circuit the radio frequency signal of the input voltage VDD that may flow to the power supply to prevent interference with the power supply, thereby maintaining the stability of the power supply. The capacitor C10 further optimizes the signal transmission between the capacitor C9 and the inductor TL5 to ensure that the high-frequency signal can be effectively output to the load.

[0030] See also Figure 2 A broadband current multiplexing low noise amplifier structure also includes a bias network 500, which is connected to the gates of transistors M1, M2 and M3 respectively, and is used to provide bias voltages for the gates of transistors M1, M2 and M3. Specifically, the main task of the bias network 500 is to provide appropriate bias voltages for the gates of transistors M1, M2 and M3 so that they can be in an appropriate amplification state when working. The correct bias voltage can ensure the stability of the operating point of the transistor, thereby improving the performance of the amplifier circuit.

[0031] See also Figure 3 The bias network 500 includes: a capacitor C1, a capacitor C3, a capacitor C5, a resistor R0, a resistor R1 and a resistor R2, wherein a first end of the resistor R0 is connected to the gate of the transistor M1, a second end of the resistor R0 is used for inputting a voltage, a first end of the capacitor C1 is connected to the second end of the resistor R0, a second end of the capacitor C1 is grounded, a first end of the resistor R1 is connected to the gate of the transistor M2, a second end of the resistor R1 is used for inputting a voltage, a first end of the capacitor C3 is connected to the second end of the resistor R1, a second end of the capacitor C3 is grounded, a first end of the resistor R2 is connected to the gate of the transistor M3, a second end of the resistor R2 is used for inputting a voltage, a first end of the capacitor C5 is connected to the second end of the resistor R2, and a second end of the capacitor C5 is grounded. Specifically, the first end of the resistor R0 is connected to the gate of the transistor M1, and the second end is connected to the input voltage VDD, which is used to provide a bias voltage for the transistor M1 and control its working state. The capacitor C1 is used to decouple high-frequency noise for the transistor M1 and stabilize the bias voltage; the first end of the resistor R1 is connected to the gate of the transistor M2, and the second end is connected to the input voltage VDD, which is used to provide a bias voltage for the transistor M2 and control its working state. The capacitor C3 is similar to the capacitor C1, and the capacitor C3 decouples high-frequency noise to ensure that the bias voltage of the transistor M2 is stable; the first end of the resistor R2 is connected to the gate of the transistor M3, and the second end is connected to the input voltage VDD, which is used to provide a bias voltage for the transistor M3 and control its working state. The capacitor C5 is also used to decouple and stabilize the bias voltage of the transistor M3.

[0032] See also Figure 3 , the source of transistor M1 is connected to the ground through the source inductor TLS1. Specifically, one end of the source inductor TLS1 is connected to the source of transistor M1, and the other end is grounded. This ensures that the signal path of the source is short and direct, which helps to ensure stable transmission of the signal. The main function of the source inductor TLS1 is to optimize the source impedance. The matching of the source impedance is very important for improving the gain of the circuit and reducing noise. By adjusting the value of the source inductor TLS1, the optimal source impedance can be achieved, making the working state of the transistor more ideal. In addition, the source inductor TLS1 can help achieve conjugate matching between the source and the load, thereby maximizing the power transmission efficiency and reducing reflection losses.

[0033] See also Figure 3 , a resistor R4 is introduced at the drain of M3, and the resistor R4 is used to ensure the stability of low frequency.

[0034] See also Figure 3, a feedback circuit is provided between the drain of transistor M2 and the gate of transistor M3, and the feedback circuit includes resistor R3, inductor L1 and capacitor C6, and resistor R3, inductor L1 and capacitor C6 are connected in series. Specifically, resistor R3 is mainly used to provide feedback current and adjust the gain of the amplifier. Through appropriate resistance value, resistor R3 can effectively control the working state of transistor M3, so that it remains in the ideal linear region, thereby improving the linearity of the amplifier. Inductor L1 helps to improve the broadband performance of the circuit. The inductor can provide corresponding inductive reactance, effectively reduce the influence of high-frequency signals, thereby maintaining the integrity of the signal at different frequencies. In addition, the feedback of the inductor can also improve the phase characteristics and help stabilize the gain. Capacitor C6 is used to provide a bypass function for high-frequency signals and effectively filter out power supply noise. It plays an important role in the feedback circuit and can help reduce the high-frequency impedance of the feedback circuit and improve the transmission efficiency of the signal. The feedback circuit forms negative feedback by feeding back the drain voltage of transistor M2 to the gate of transistor M3. This negative feedback mechanism helps to suppress nonlinear distortion and ensure that the amplifier maintains a linear response under different input signal strengths.

[0035] In the design of low noise amplifier (LNA), a broadband current multiplexing low noise amplifier structure has significant power consumption advantages compared with the traditional three-stage common source structure. Specifically, see Figure 3 , the direct current (DC) flows from the drain of the final stage to the source of the first stage through the transmission line TL1, the transmission line TL3 and the inductor L3, because the capacitors CB1 and CB2 isolate the DC. Compared with the three-stage common source structure cascade, a broadband current multiplexing low-noise amplifier structure can significantly save three times the current and effectively reduce the power consumption of the amplifier. It should be noted that all choke inductors and bypass capacitors need to be taken into account in the inter-stage matching.

[0036] See also Figures 4 to 8 , the conventional low noise amplifier (shown as Conf in the figure) has a 3dB bandwidth frequency range of 22-30 GHz, and a relative bandwidth of about 31%; the design of a broadband current multiplexing low noise amplifier structure proposed in this application (shown as Prop in the figure) has a 3dB bandwidth frequency range of 13-30 GHz, and a relative bandwidth of about 79%. It can be clearly seen that the proposed structure has obvious advantages in bandwidth expansion, and the important indicators "noise figure", "input return loss (S11)", and "output return loss (S22)" can all meet the use requirements of low noise amplifiers. While changing from narrowband to broadband, the performance has not been significantly deteriorated. In terms of stability, the proposed structure can also achieve absolute stability over the entire frequency band.

[0037] Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present invention.

[0038] Obviously, those skilled in the art can make various changes and modifications to the embodiments of the present invention without departing from the spirit and scope of the embodiments of the present invention. Thus, if these modifications and variations of the embodiments of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

Claims

1. A broadband current multiplexing low noise amplifier structure, characterized in that: include: A transistor M1, a transistor M2, a first coupling line module, a capacitor C2 and a capacitor CB1, wherein the transistor M1 and the transistor M2 are cascaded and used to amplify the signal, the first coupling line module includes a transmission line TL1 and a transmission line TL2 close to each other, the transmission line TL2 is connected between the drain of the transistor M1 and the gate of the transistor M2, the transmission line TL1 is connected between the drain of the transistor M1 and the source of the transistor M2, the capacitor C2 is connected between the transmission line TL2 and the drain of the transistor M1, and the capacitor CB1 is connected between the source of the transistor M2 and ground.

2. A broadband current multiplexing low noise amplifier structure according to claim 1, characterized in that: It also includes a transistor M3, a second coupling line module, a capacitor C4 and a capacitor CB2. The transistor M3 is cascaded with the transistor M2. The second coupling line module includes a transmission line TL3 and a transmission line TL4 close to each other. The transmission line TL4 is connected between the drain of the transistor M2 and the gate of the transistor M3. The transmission line TL3 is connected between the drain of the transistor M2 and the source of the transistor M3. The capacitor C4 is connected between the transmission line TL4 and the drain of the transistor M2. The capacitor CB2 is connected between the source of the transistor M3 and the ground.

3. A broadband current multiplexing low noise amplifier structure according to claim 2, characterized in that: The gate of the transistor M1 is used to connect to the signal input terminal. An input matching circuit is provided between the gate of the transistor M1 and the signal input terminal. The input matching circuit is used to optimize input matching.

4. A broadband current multiplexing low noise amplifier structure according to claim 3, characterized in that: The input matching circuit includes a capacitor C0 and an inductor TL0 connected in series.

5. The broadband current multiplexing low noise amplifier structure according to claim 2, characterized in that: The drain of the transistor M3 is used to connect to the signal output end. An output matching circuit is provided between the drain of the transistor M3 and the signal output end. The output matching circuit is used to optimize output matching.

6. A broadband current multiplexing low noise amplifier structure according to claim 5, characterized in that: The output matching circuit includes an inductor L2, an inductor L3, a capacitor C9, a capacitor C10 and an inductor TL5. The inductor L2, the capacitor C9 and the inductor TL5 are connected in series in sequence. The inductor L2 is connected to the drain of the transistor M3, the inductor TL5 is connected to the signal output end, the first end of the inductor L3 is connected between the inductor L2 and the capacitor C9, the second end of the inductor L3 is grounded, the first end of the capacitor C10 is connected between the capacitor C9 and the inductor TL5, and the other end of the capacitor C10 is grounded.

7. The broadband current multiplexing low noise amplifier structure according to claim 2, characterized in that: The device further comprises a bias network, which is respectively connected to the gates of the transistor M1 , the transistor M2 and the transistor M3 , and is used to provide bias voltages for the gates of the transistor M1 , the transistor M2 and the transistor M3 .

8. The broadband current multiplexing low noise amplifier structure according to claim 7, characterized in that: The bias network includes: capacitor C1, capacitor C3, capacitor C5, resistor R0, resistor R1 and resistor R2, the first end of the resistor R0 is connected to the gate of the transistor M1, the second end of the resistor R0 is used for inputting voltage, the first end of the capacitor C1 is connected to the second end of the resistor R0, the second end of the capacitor C1 is grounded, the first end of the resistor R1 is connected to the gate of the transistor M2, the second end of the resistor R1 is used for inputting voltage, the first end of the capacitor C3 is connected to the second end of the resistor R1, the second end of the capacitor C3 is grounded, the first end of the resistor R2 is connected to the gate of the transistor M3, the second end of the resistor R2 is used for inputting voltage, the first end of the capacitor C5 is connected to the second end of the resistor R2, and the second end of the capacitor C5 is grounded.

9. The broadband current multiplexing low noise amplifier structure according to claim 1, characterized in that: The source of the transistor M1 is connected to the ground via a source inductor TLS1 .

10. The broadband current multiplexing low noise amplifier structure according to claim 2, characterized in that: A feedback circuit is provided between the drain of the transistor M2 and the gate of the transistor M3 . The feedback circuit includes a resistor R3 , an inductor L1 , and a capacitor C6 . The resistor R3 , the inductor L1 , and the capacitor C6 are connected in series.

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