Perovskite crystalline silicon laminated cell and preparation method thereof

Abstract

The invention provides a perovskite crystal silicon laminated cell and a preparation method, the laminated cell comprises a perovskite top cell and a crystal silicon bottom cell, an overlapping area of the two cells is a working area of the laminated cell, and a non-overlapping area of the two cells is a non-working area of the laminated cell; and a top electrode welding strip and a bottom electrode welding strip are arranged at the bottom of the crystalline silicon bottom battery, correspond to the non-working area and are respectively connected with the perovskite top battery and the crystalline silicon bottom battery through a top electrode and a bottom electrode which are independent from each other. The top electrode and the bottom electrode are led to the same side of the laminated cell, so that the welding process of the laminated cell assembly can be simplified, and the preparation efficiency is improved; the positions of the top electrode welding strip and the bottom electrode welding strip correspond to the non-working area of the laminated cell, so that high temperature at a welding spot can be effectively prevented from directly contacting the working area of the laminated cell.

Description

Technical Field

[0001] The present invention relates to the technical field of perovskite crystalline silicon stacked cells, and in particular to a perovskite crystalline silicon stacked cell and a preparation method thereof. Background Art

[0002] Perovskite crystalline silicon tandem cells combine perovskite cells with crystalline silicon cells, using the perovskite layer to absorb high-energy short-wave light, while the silicon cell absorbs low-energy long-wave light, thereby achieving a higher overall photoelectric conversion efficiency. Perovskite crystalline silicon tandem cell components can meet the power requirements in practical applications and improve the power output and efficiency of photovoltaic systems. However, the current structure of perovskite crystalline silicon tandem cells (see attached Figure 1-2 ), which makes the perovskite crystalline silicon tandem battery module face problems of electrode welding firmness and manufacturing process complexity; the perovskite top cell material of the tandem battery may degrade during high-temperature welding, affecting the life of the module; the interface between the solder joint and the silicon substrate may have poor adhesion or electrical contact problems; the tandem battery may face thermal expansion mismatch problems at high temperatures; and the material selection and process requirements in the manufacturing process increase production costs and technical difficulties. These problems need to be solved through technological innovation and process optimization. Summary of the invention

[0003] The object of the present invention is to provide a perovskite crystalline silicon stacked cell and a preparation method thereof to solve the problems in the background technology.

[0004] The technical solution of the present invention includes: a perovskite crystalline silicon stacked cell, which includes a perovskite top cell and a crystalline silicon bottom cell, the overlapping area of ​​the two is the working area of ​​the stacked cell, and the non-overlapping area of ​​the two is the non-working area of ​​the stacked cell; the bottom of the crystalline silicon bottom cell is provided with a top electrode welding strip and a bottom electrode welding strip, both of which correspond to the non-working area, and the perovskite top cell and the crystalline silicon bottom cell are connected respectively through mutually independent top electrodes and bottom electrodes.

[0005] Preferably, the area of ​​the perovskite top cell is less than the area of ​​the crystalline silicon bottom cell, the top electrode extends from the top surface of the perovskite top cell to the top surface, side surface and bottom surface of the non-working area, and the top electrode welding strip is located at the bottom of the top electrode.

[0006] Preferably, an insulating barrier layer and a top electrode transition metal layer are provided between the top electrode and the non-working area, the insulating barrier layer is located on the top surface and side surfaces of the non-working area, and the top electrode transition metal layer is located on the bottom surface of the non-working area.

[0007] Preferably, the bottom electrode is located at the bottom of the crystalline silicon bottom cell, extending from the working area to the non-working area, and the bottom electrode welding strip is located at the bottom of the bottom electrode.

[0008] Preferably, a bottom electrode transition metal layer is provided between the bottom electrode and the non-working area.

[0009] Preferably, the top electrode transition metal layer includes at least one of nickel, titanium and tungsten, and the bottom electrode transition metal layer includes at least one of nickel, titanium and tungsten.

[0010] Preferably, the thickness of the top electrode transition metal layer and the bottom electrode transition metal layer are respectively 10 nm to 100 nm.

[0011] Preferably, the thickness of the top electrode and the bottom electrode is 1 μm to 5 μm respectively.

[0012] The technical solution of the present invention also includes: a method for preparing the above-mentioned perovskite crystalline silicon tandem battery, which comprises the steps of:

[0013] Using the surface where the bottom electrode is located as the bottom surface of the crystalline silicon bottom cell, depositing a top electrode transition metal layer and a bottom electrode transition metal layer on both sides of the bottom electrode respectively, so that the top electrode transition metal layer and the bottom electrode transition metal layer correspond to the non-working area;

[0014] Depositing an insulating barrier layer on the side and top surfaces of the crystalline silicon bottom cell, so that the top of the insulating barrier layer corresponds to the non-working area and the bottom extends to the top electrode transition metal layer;

[0015] A perovskite top cell is prepared on the top surface of the crystalline silicon bottom cell, so that the top electrode is located on the top surface of the perovskite top cell;

[0016] The top electrode is led to the bottom of the top electrode transition metal layer by an evaporation process, and the bottom electrode is led to the bottom of the bottom electrode transition metal layer by an evaporation process; a top electrode welding strip is welded at the bottom of the top electrode, and a bottom electrode welding strip is welded at the bottom of the bottom electrode, so that the bottom electrode welding strip is located outside the working area.

[0017] The present invention has the following beneficial effects: by leading the top electrode and the bottom electrode to the same side of the laminated battery, the welding process of the laminated battery assembly can be greatly simplified without affecting the efficiency of the laminated battery, thereby improving the preparation efficiency of the laminated battery assembly; the positions of the top electrode welding strip and the bottom electrode welding strip both correspond to the non-working area of ​​the laminated battery, that is, the welding position corresponds to the non-working area of ​​the laminated battery, which can effectively prevent the high temperature at the welding point from directly contacting the working area of ​​the laminated battery, reduce the influence of the high temperature on the material in the perovskite top electrode during welding, and improve the power generation efficiency of the battery assembly; by depositing the top electrode transition metal layer and the bottom electrode transition metal layer in the non-working area of ​​the laminated battery, the material bonding strength of the top electrode and the bottom electrode with the crystalline silicon bottom battery is improved, and at the same time, the problem of electrode detachment caused by the inconsistency of the thermal expansion coefficient of the multilayer structure at the battery welding point is solved, thereby improving the firmness and service life of the welding point. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a schematic diagram of the structure of a perovskite crystalline silicon stacked battery prepared by the prior art (comparative example);

[0019] Figure 2 This is a top view of the perovskite crystalline silicon tandem cell;

[0020] Figure 3 Schematic diagram of the structure of the perovskite crystalline silicon tandem battery prepared in Example 1 of the present invention;

[0021] Figure 4 Schematic diagram of the structure of the perovskite crystalline silicon tandem battery prepared in Example 2 of the present invention;

[0022] Figure 5 Schematic diagram of the structure of the perovskite crystalline silicon tandem battery prepared in Example 3 of the present invention;

[0023] Figure 6 It is a schematic diagram of the perovskite crystalline silicon stacked battery assembly prepared in Example 4 of the present invention.

[0024] 1. Perovskite top cell;

[0025] 2. Crystalline silicon bottom battery;

[0026] 3. Top electrode;

[0027] 4. Bottom electrode;

[0028] 5. Top electrode transition metal layer

[0029] 6. Bottom electrode transition metal layer

[0030] 7. Insulation barrier layer;

[0031] 8. Top electrode welding strip;

[0032] 9. Bottom electrode welding strip;

[0033] 10. Work area;

[0034] 11. Non-working area. DETAILED DESCRIPTION

[0035] The present invention will be further described below in conjunction with embodiments and drawings:

[0036] Unless otherwise defined, all professional terms used hereinafter have the same meaning as those generally understood by those skilled in the art. The professional terms used herein are only for the purpose of describing specific embodiments and comparative examples, and are not intended to limit the scope of protection of the present invention. It should be particularly noted that there may be multiple names for the same organic structure, as long as the structure is within the scope of this patent, it belongs to the protection object of this patent.

[0037] Unless otherwise defined, the raw materials, reagents, etc. in the following examples can be purchased from the market or prepared according to reported methods.

[0038] The present invention provides a perovskite crystalline silicon stacked battery and a preparation method thereof. The structure of the perovskite crystalline silicon stacked battery comprises a perovskite top battery 1 and a crystalline silicon bottom battery 2. The perovskite top battery 1 is located above the crystalline silicon bottom battery 2, and its area is smaller than that of the crystalline silicon bottom battery 2. The overlapping area of ​​the two is the working area 10 of the stacked battery, and the non-overlapping area of ​​the two is the non-working area 11 of the stacked battery. Generally, the perovskite top battery 1 is located at the top center of the crystalline silicon bottom battery 2, and the non-working area 11 surrounds the working area 10. The perovskite top battery 1 and the crystalline silicon bottom battery 2 respectively have their own output electrodes, and the output electrodes of the two are independent of each other. The perovskite top battery 1 The output electrode of the battery 1 is the top electrode 3, one end of the top electrode 3 is located at the top of the perovskite top battery 1, and the other end extends to the bottom of the crystalline silicon bottom battery 2, and then connected to the top electrode welding strip 8 located at the bottom of the crystalline silicon bottom battery 2 and corresponding to the non-working area 11. The output electrode of the crystalline silicon bottom battery 2 is the bottom electrode 4, and the bottom electrode 4 is located at the bottom of the crystalline silicon bottom battery 2. The positions of the two ends correspond to the working area 10 and the non-working area 11 respectively, and the end located in the non-working area 11 is connected to the bottom electrode welding strip 9; the top electrode welding strip 8 and the bottom electrode welding strip 9 are used to connect and combine with other perovskite crystalline silicon stacked batteries to obtain a perovskite crystalline silicon stacked battery assembly.

[0039] The perovskite crystalline silicon stacked cell prepared by adopting the present technical solution has a top electrode 3 and a bottom electrode 4 which are led to the same side of the stacked cell. This can greatly simplify the welding process of the stacked cell assembly without affecting the efficiency of the stacked cell, thereby improving the preparation efficiency of the stacked cell assembly. The positions of the top electrode welding strip 8 and the bottom electrode welding strip 9 both correspond to the non-working area 11 of the stacked cell, that is, the welding position corresponds to the non-working area 11 of the stacked cell, which can effectively prevent the high temperature at the welding point from directly contacting the working area 10 of the stacked cell, thereby reducing the influence of the high temperature on the material in the perovskite top electrode 3 during welding, thereby improving the power generation efficiency of the cell assembly.

[0040] In some specific embodiments, the top electrode 3 extends from the top surface of the perovskite top cell 1 to the top, side and bottom surfaces of the non-working area 11. In order to avoid electrical contact between the top electrode 3 and the crystalline silicon bottom cell 2 and thus a short circuit, an insulating barrier layer 7 may be provided between the top electrode 3 and the non-working area 11. The insulating barrier layer 7 is located on the top and side surfaces of the non-working area 11, electrically isolating the top electrode 3 from the crystalline silicon bottom cell 2, thereby reducing the power generation efficiency loss of the stacked cell.

[0041] The insulating barrier layer 7 can be made of any one of metal oxide nanoparticles, high molecular polymers, resins or organic phase change materials, or a combination of at least two of them, and its thickness is 5nm to 50nm, including but not limited to 5nm, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, and 50nm.

[0042] In addition, the present embodiment also arranges a top electrode transition metal layer 5 and a bottom electrode transition metal layer 6 at the bottom of the crystalline silicon bottom battery 2, so as to improve the surface bonding force between the top electrode 3 and the crystalline silicon bottom battery 2, and between the bottom electrode 4 and the crystalline silicon bottom battery 2, and solve the problem of electrode detachment caused by the inconsistency of the thermal expansion coefficient of the multi-layer structure at the battery welding point, thereby improving the stability of welding.

[0043] During implementation, the top electrode transition metal layer 5 and the bottom electrode transition metal layer 6 are both located at the bottom surface of the non-working area 11, the bottom end of the top electrode 3 is located at the bottom of the top electrode transition metal layer 5, the top electrode welding strip 8 is welded to the bottom of the top electrode 3, one end of the bottom electrode 4 is located at the bottom surface of the working area 10, and the other end is located at the bottom of the bottom electrode transition metal layer 6, the bottom electrode welding strip 9 is welded to the bottom of the bottom electrode 4, and the welding point is located outside the working area 10. The use of this technical solution can significantly improve the firmness and service life of the welding point.

[0044] It should be noted that in the stacked battery provided in this embodiment, the sides of the bottom end of the top electrode 3, the top electrode transition metal layer 5 and the top electrode welding strip 8 all have gaps with the sides of the bottom electrode 4, that is, they do not contact the bottom electrode 4, avoiding interconnection short circuit and thus affecting the power generation efficiency of the stacked battery.

[0045] Both the top electrode transition metal layer 5 and the bottom electrode transition metal layer 6 can be constructed of transition metal materials. The optional transition metal materials include any one of nickel, titanium, tungsten and other metal materials or a combination of at least two of them. The thickness is 10nm to 100nm, including but not limited to 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, and 100nm.

[0046] In this embodiment, the thickness of the top electrode 3 and the bottom electrode 4 are respectively 1 μm to 5 μm, including but not limited to 1 μm, 2 μm, 3 μm, 4 μm, and 5 μm.

[0047] The method for preparing the above-mentioned perovskite crystalline silicon stacked cell comprises the following steps:

[0048] (1) With the surface where the bottom electrode 4 is located as the bottom surface of the crystalline silicon bottom cell 2, a top electrode transition metal layer 5 and a bottom electrode transition metal layer 6 are deposited on both sides of the bottom electrode 4, respectively, so that the top electrode transition metal layer 5 and the bottom electrode transition metal layer 6 correspond to the non-working area 11;

[0049] In this step, when depositing the top electrode transition metal layer 5 and the bottom electrode transition metal layer 6, thermal evaporation, ion beam or magnetron sputtering technology is used, and the deposited top electrode transition metal layer 5 and the bottom electrode transition metal layer 6 correspond to the welding point positions of the top electrode welding strip 8 and the welding point positions of the bottom electrode welding strip 9 respectively.

[0050] (2) depositing an insulating barrier layer 7 on the side and top surfaces of the crystalline silicon bottom cell 2, so that the top of the insulating barrier layer 7 corresponds to the non-working area 11 and the bottom extends to the top electrode transition metal layer 5;

[0051] In this step, CVD chemical deposition or ALD atomic deposition technology is used to deposit the insulating barrier layer 7 , and the deposited insulating barrier layer 7 is used to isolate the top electrode 3 and the crystalline silicon bottom cell 2 .

[0052] (3) preparing a perovskite top cell 1 on the top surface of the crystalline silicon bottom cell 2, including but not limited to a perovskite material, a functional layer and a top electrode 3, so that the top electrode 3 is located on the top surface of the perovskite top cell 1;

[0053] (4) Using an evaporation process to lead the top electrode 3 to the bottom of the top electrode transition metal layer 5, using an evaporation process to lead the bottom electrode 4 to the bottom of the bottom electrode transition metal layer 6, welding a top electrode welding strip 8 to the bottom of the top electrode 3, and welding a bottom electrode welding strip 9 to the bottom of the bottom electrode 4, so that the bottom electrode welding strip 9 is located outside the working area 10;

[0054] In this step, the extradition area of ​​the top electrode 3 should be precisely controlled so that the insulating barrier layer 7 can completely block the adjacent surfaces of the top electrode 3 and the crystalline silicon bottom cell 2 to avoid interconnection short circuit.

[0055] In this step, welding can be performed by tin soldering, resistance welding, hot pressing, etc. After welding is completed, the perovskite crystalline silicon stacked battery is manufactured. When in use, the stacked batteries can be arranged, combined and welded according to the application scenario requirements to obtain a perovskite crystalline silicon stacked battery assembly.

[0056] Compared with the prior art, the beneficial effects of the present invention include at least: by leading the top electrode 3 and the bottom electrode 4 to the same side of the laminated battery, the welding process of the laminated battery assembly can be greatly simplified without affecting the efficiency of the laminated battery, thereby improving the preparation efficiency of the laminated battery assembly; the positions of the top electrode welding strip 8 and the bottom electrode welding strip 9 both correspond to the non-working area 11 of the laminated battery, that is, the welding position corresponds to the non-working area 11 of the laminated battery, which can effectively prevent the high temperature at the welding point from directly contacting the working area 10 of the laminated battery, reduce the influence of the high temperature on the material in the perovskite top electrode 3 during welding, and improve the power generation efficiency of the battery assembly; by depositing the top electrode transition metal layer 5 and the bottom electrode transition metal layer 6 in the non-working area 11 of the laminated battery, the material bonding strength of the top electrode 3 and the bottom electrode 4 with the crystalline silicon bottom battery 2 is improved, and at the same time, the problem of electrode detachment caused by the inconsistency of the thermal expansion coefficient of the multilayer structure at the battery welding point is solved, and the firmness and service life of the welding point are improved.

[0057] Some specific embodiments and comparative examples are disclosed below.

[0058] Example 1

[0059] The positions and areas of the working area 10 and the non-working area 11 of the stacked battery are pre-designed. Figure 3 Preparation of perovskite crystalline silicon tandem cells using a structure.

[0060] (1) On the bottom surface of the crystalline silicon bottom cell 2, at the left and right positions corresponding to the non-working area 11, a 10 nm transition metal titanium is deposited by a magnetron sputtering process to form a bottom electrode transition metal layer 6 and a top electrode transition metal layer 5, respectively. The two will serve as the welding point positions of the positive and negative electrodes of the stacked battery. It should be noted that in order to prevent the positive and negative electrodes from being connected and causing a short circuit, the transition metal layers at the two locations need to be independent and not interconnected;

[0061] (2) using an atomic deposition process to deposit 20 nm of Al2O3 as an insulating barrier layer 7 on the top surface of the crystalline silicon bottom cell 2 at a position corresponding to the non-working area 11 and on the side thereof;

[0062] (3) preparing a perovskite top cell 1 at a position corresponding to the working area 10 on the top surface of the crystalline silicon bottom cell 2, which includes: a perovskite material, a functional layer C60, SnOx, ITO and a top electrode 3 (the top electrode 3 is made of Ag);

[0063] (4) The top electrode 3 is transferred from the top of the perovskite top cell 1 along the insulating barrier layer 7 to the bottom of the top electrode transition metal layer 5 by an evaporation process, and the bottom electrode 4 is transferred to the bottom of the bottom electrode transition metal layer 6 by an evaporation process. The metal deposition thicknesses of the top electrode 3 and the bottom electrode 4 are 2 μm respectively; the top electrode welding strip 8 is welded at the welding point position of the top electrode 3 (corresponding to the portion of the non-working area 11) by soldering, and the bottom electrode welding strip 9 is welded at the welding point position of the bottom electrode 4 (corresponding to the portion of the non-working area 11) by soldering.

[0064] Example 2

[0065] Reference Figure 4 The only difference from Example 1 is that the insulating barrier layer 7 is not deposited in this embodiment, and the other preparation processes, conditions and parameters are exactly the same as those in Example 1.

[0066] Example 3

[0067] Reference Figure 5 The only difference from Example 1 is that the top electrode transition metal layer 5 and the bottom electrode transition metal layer 6 are not deposited in this embodiment, and the other preparation processes, conditions, and parameters are exactly the same as those in Example 1.

[0068] Comparative Example

[0069] Reference Figure 1 The difference from Example 1 is that, in this comparative example, the electrode is not extradited to the non-working area 11 of the laminate battery, and its welding point is located in the working area 10 of the laminate battery, and the insulating barrier layer 7, the top electrode transition metal layer 5, and the bottom electrode transition metal layer 6 are not introduced, and the top electrode welding strip 8 and the bottom electrode welding strip 9 are located on the top and bottom sides of the laminate battery. The other preparation processes, conditions, and parameters are exactly the same as those in Example 1.

[0070] Example 4

[0071] The perovskite crystalline silicon stacked cell prepared in Example 1 was Figure 6 Arrange and combine, and weld to obtain three-series and three-parallel perovskite crystalline silicon stacked battery components

[0072] Performance Testing

[0073] The four groups of perovskite crystalline silicon stacked cells obtained in Examples 1-3 and the comparative example were tested for photoelectric conversion efficiency under standard test conditions (AM1.5G, 25°C). The test results are shown in Table 1.

[0074] Table 1 Cell photovoltaic performance test results

[0075]

[0076] As can be seen from Table 1, in the technical solution provided by the present invention, the electrodes in the perovskite crystalline silicon stacked battery structure are led out from the working area 10 of the stacked battery, and the insulating barrier layer 7 and the transition metal layer are added, which have a crucial effect on the battery performance. Comparing the performance test results of Example 1 and Example 2, it can be obtained that the present invention effectively prevents the damage of the perovskite film by the high welding temperature by leading the top electrode 3 and the bottom electrode 4 out of the working area 10 of the stacked battery, so that the welding point is located in the non-working area 11 of the stacked battery, and can significantly improve the performance of the stacked battery after welding. Comparing the performance test results of Example 1 and Example 2, it can be obtained that the insulating barrier layer 7 can block the short circuit phenomenon caused by the top electrode 3 contacting the crystalline silicon bottom battery 2 during the extradition, thereby reducing the efficiency loss of the battery. Comparing the performance test results of Example 1 and Example 3, it can be obtained that the transition metal layer can greatly improve the firmness of the welding point, while reducing the problem of electrode shedding caused by the inconsistency of the thermal expansion coefficient of the multilayer structure at the battery welding point, thereby improving the reliability of the battery device.

[0077] In Example 4, the battery assembly composed of the perovskite crystalline silicon stacked cells prepared in Example 1 has a greatly reduced process difficulty and complexity in assembly preparation and improved reliability of the battery assembly because the top electrode 3 and the bottom electrode 4 are welded reliably and are located on the same side.

[0078] The above are preferred embodiments of the present invention. It should be pointed out that, for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present invention. These improvements and modifications should also be regarded as within the scope of protection of the present invention.

Claims

1. A perovskite crystalline silicon tandem battery, characterized in that: It comprises a perovskite top cell and a crystalline silicon bottom cell, the overlapping area between the two is the working area of ​​the stacked cell, and the non-overlapping area between the two is the non-working area of ​​the stacked cell; a top electrode welding strip and a bottom electrode welding strip are provided at the bottom of the crystalline silicon bottom cell, both of which correspond to the non-working area, and the perovskite top cell and the crystalline silicon bottom cell are connected respectively through mutually independent top electrodes and bottom electrodes.

2. The perovskite crystalline silicon tandem cell according to claim 1, characterized in that: The area of ​​the perovskite top cell is less than the area of ​​the crystalline silicon bottom cell, the top electrode extends from the top surface of the perovskite top cell to the top surface, side surface and bottom surface of the non-working area, and the top electrode welding strip is located at the bottom of the top electrode.

3. The perovskite crystalline silicon tandem cell according to claim 1 or 2, characterized in that: An insulating barrier layer and a top electrode transition metal layer are provided between the top electrode and the non-working area. The insulating barrier layer is located on the top surface and side surfaces of the non-working area, and the top electrode transition metal layer is located on the bottom surface of the non-working area.

4. The perovskite crystalline silicon tandem cell according to claim 3, characterized in that: The bottom electrode is located at the bottom of the crystalline silicon bottom cell and extends from the working area to the non-working area. The bottom electrode welding strip is located at the bottom of the bottom electrode.

5. The perovskite crystalline silicon tandem cell according to claim 4, characterized in that: A bottom electrode transition metal layer is provided between the bottom electrode and the non-working area.

6. The perovskite crystalline silicon tandem cell according to claim 5, characterized in that: The top electrode transition metal layer includes at least one of nickel, titanium, and tungsten, and the bottom electrode transition metal layer includes at least one of nickel, titanium, and tungsten.

7. The perovskite crystalline silicon tandem cell according to claim 5, characterized in that: The thickness of the top electrode transition metal layer and the bottom electrode transition metal layer are respectively 10 nm to 100 nm.

8. The perovskite crystalline silicon tandem cell according to claim 1, characterized in that: The thickness of the top electrode and the bottom electrode are respectively 1 μm to 5 μm.

9. A method for preparing a perovskite crystalline silicon tandem cell according to any one of claims 1 to 8, characterized in that: Includes steps: Using the surface where the bottom electrode is located as the bottom surface of the crystalline silicon bottom cell, depositing a top electrode transition metal layer and a bottom electrode transition metal layer on both sides of the bottom electrode respectively, so that the top electrode transition metal layer and the bottom electrode transition metal layer correspond to the non-working area; Depositing an insulating barrier layer on the side and top surfaces of the crystalline silicon bottom cell, so that the top of the insulating barrier layer corresponds to the non-working area and the bottom extends to the top electrode transition metal layer; A perovskite top cell is prepared on the top surface of the crystalline silicon bottom cell, so that the top electrode is located on the top surface of the perovskite top cell; The top electrode is led to the bottom of the top electrode transition metal layer by an evaporation process, and the bottom electrode is led to the bottom of the bottom electrode transition metal layer by an evaporation process; a top electrode welding strip is welded at the bottom of the top electrode, and a bottom electrode welding strip is welded at the bottom of the bottom electrode, so that the bottom electrode welding strip is located outside the working area.

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