Device and method for cleaning semiconductor parts

Abstract

The invention discloses a device and method for cleaning semiconductor parts, and the device at least comprises a first container which is used for containing liquid carbon dioxide; the second container is used for containing an enhanced cleaning agent; a control unit; a supercharge metering pump; the first container is communicated with the control unit through a first pipeline; the second container is communicated with the control unit through a second pipeline; the pressurizing metering pump is arranged on the second pipeline; and a mixture formed by the liquid carbon dioxide and the enhanced cleaning agent in the control unit is sprayed to the surface of the semiconductor part through a third pipeline and a cleaning nozzle so as to clean the semiconductor part. By means of the method, particulate pollutants on semiconductor parts can be efficiently cleaned, and therefore the yield of chip products is increased.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a device and method for cleaning semiconductor components. Background Art

[0002] During the use of semiconductor components, some particulate pollutants will inevitably be deposited on their surfaces, such as aluminum fluoride, aluminum oxide, yttrium oxide, silicon oxide, fluorocarbon polymers, etc. These particulate pollutants have a serious impact on the yield of the wafer and may cause circuit defects, short circuits or other problems, thereby reducing the quality and performance of the final chip products.

[0003] In order to solve the above problems, semiconductor components need to be cleaned regularly to reduce the impact of particulate contaminants on wafer yield, thereby improving production efficiency and chip product quality; at the same time, regular cleaning can also help extend the service life of semiconductor components and reduce replacement frequency and cost. Currently, commonly used cleaning methods include wet cleaning, dry cleaning, ultrasonic cleaning, etc., but these cleaning methods cannot completely remove particulate contaminants on semiconductor components. Summary of the invention

[0004] The purpose of the present invention is to overcome the defect that the existing cleaning device and method cannot efficiently remove the particle contaminants on the semiconductor components.

[0005] In order to achieve the above object, the present invention provides a device for cleaning semiconductor components, comprising at least:

[0006] a first container, the first container being used to contain liquid carbon dioxide;

[0007] a second container, the second container being used to hold an enhanced cleaning agent;

[0008] Control unit;

[0009] Booster metering pump;

[0010] The first container is connected to the control unit via a first pipeline;

[0011] The second container is connected to the control unit via a second pipeline;

[0012] The boost metering pump is arranged on the second pipeline;

[0013] The mixture of the liquid carbon dioxide and the enhanced cleaning agent formed in the control unit is sprayed onto the surface of the semiconductor component through the third pipeline and the cleaning nozzle to clean the semiconductor component.

[0014] Optionally, the device further comprises an air compressor, and the air compressor is connected to the control unit via a fourth pipeline.

[0015] Optionally, the second pipeline is connected to the first pipeline, so that the second container is connected to the control unit.

[0016] Optionally, the cleaning nozzle is disposed at the end of the third pipeline, and the mixture is sprayed onto the surface of the semiconductor component through the cleaning nozzle.

[0017] Optionally, the semiconductor component includes at least any one of a confinement ring, a sealing ring, an electrostatic chuck, a chamber, an edge ring, a liner, an insulating ring, and a gas shower head.

[0018] The present invention also provides a method for cleaning semiconductor components, comprising at least the following steps:

[0019] Providing a device for cleaning semiconductor components as described above;

[0020] The liquid carbon dioxide is introduced into the control unit from the first container through the first pipeline, and the enhanced cleaning agent is introduced into the control unit from the second container through the second pipeline,

[0021] The enhanced cleaning agent is pressurized and the input amount is controlled by a booster metering pump;

[0022] The liquid carbon dioxide and the enhanced cleaning agent are uniformly mixed in the control unit, and the formed mixture is sprayed onto the surface of the semiconductor component through the third pipeline and the cleaning nozzle to clean the semiconductor component;

[0023] Wherein, the enhanced cleaning agent at least contains a polar solvent, and the solidification temperature of the polar solvent is lower than -56.6°C.

[0024] Optionally, by volume ratio, the liquid carbon dioxide: the enhanced cleaning agent = (80% to 99.9%): (0.1% to 20%).

[0025] Optionally, the polar solvent comprises ethanol, isopropanol, acetone, butanone, ethylene glycol butyl ether, propylene glycol methyl ether, propylene glycol methyl ether acetate, 3M TM Novec TM Any one or more of 7100DL electronic fluoride liquid.

[0026] Optionally, the enhanced cleaning agent further comprises a surfactant, and the solidification temperature of the surfactant is lower than -56.6°C.

[0027] Optionally, by volume ratio, the polar solvent: the surfactant = (97% to 99.99%): (0.01% to 3%).

[0028] Optionally, the surfactant is an ionic liquid surfactant.

[0029] Optionally, the ionic liquid surfactant is any one or more of 1-dodecyl-3-methylimidazolium-β-naphthol sulfonate, 1-ethyl-3-methylimidazolium methanesulfonate, tetramethylammonium glycinate, 1-butyl-3-methylimidazolium tetrafluoroborate, 1-hexyl-3-methylimidazolium tetrafluoroborate, and 1-hexyl-3-methylimidazolium hexafluorophosphate.

[0030] Optionally, the input pressure of the liquid carbon dioxide is 2MPa to 10MPa, and the input flow rate of the liquid carbon dioxide is 5L / h to 30L / h.

[0031] Optionally, the boosting pressure of the boosting metering pump on the enhanced cleaning agent is greater than the input pressure of the liquid carbon dioxide.

[0032] Optionally, the boosting pressure of the boosting metering pump on the enhanced cleaning agent is 3MPa to 12MPa.

[0033] Optionally, the method further comprises: providing an air compressor, wherein the air compressor inputs compressed air into the control unit through a fourth pipeline.

[0034] Optionally, the input pressure of the compressed air is 0.5 MPa to 1 MPa, and the working input flow rate of the compressed air is 10 m 3 / h~300m 3 / h.

[0035] Optionally, the cleaning nozzle is arranged at the end of the third pipeline, the distance between the cleaning nozzle and the semiconductor component is 0cm~30cm, the angle between the cleaning nozzle and the semiconductor component is 10°~90°, and the spray pressure of the cleaning nozzle is 0.2MPa~1.6MPa.

[0036] Optionally, after cleaning the semiconductor component, the method further includes rinsing the semiconductor component with ultrapure water.

[0037] Optionally, the resistivity of the ultrapure water is greater than 4 MΩ·cm, and the temperature of the ultrapure water is 25° C. to 90° C.

[0038] Optionally, after the semiconductor component is cleaned with ultrapure water, the method further includes heating and drying the semiconductor component with an oven.

[0039] Optionally, the temperature of the oven is 60° C. to 130° C., and the heating and drying time is 1 h to 6 h.

[0040] Compared with the prior art, the beneficial effects of the present invention include at least:

[0041] (1) The device for cleaning semiconductor components of the present invention comprises a first container for containing liquid carbon dioxide, a second container for containing an enhanced cleaning agent, a control unit, and a booster metering pump. The enhanced cleaning agent at least comprises a polar solvent having a solidification temperature lower than -56.6°C. When the device is used to clean semiconductor components, liquid carbon dioxide and the enhanced cleaning agent are pumped into the control unit, and the enhanced cleaning agent is pressurized and the input amount is controlled by the booster metering pump. When the liquid carbon dioxide, the enhanced cleaning agent, and the compressed air are sprayed through the cleaning nozzle to form solid carbon dioxide snowflake particles, gaseous carbon dioxide, liquid enhanced cleaning agent, and air flow are also sprayed out at the same time to form A three-phase mixture of gas, liquid and solid. When the mixture is sprayed onto the surface of semiconductor components, solid carbon dioxide snowflake particles produce an explosion effect on the surface of semiconductor components, thereby removing non-polar particulate pollutants; the polar solvent in the enhanced cleaning agent dissolves and removes polar particulate pollutants; further, the enhanced cleaning agent also contains an ionic liquid surfactant with a solidification temperature lower than -56.6°C, and the surfactant wraps the removed particulate pollutants to prevent them from being adsorbed back onto the surface of semiconductor components; this method efficiently removes various types of particulate pollutants on semiconductor components while ensuring that no damage is caused to semiconductor components.

[0042] (2) The liquid carbon dioxide, polar solvent and ionic liquid surfactant used in the cleaning method of the present invention are safe, low-cost, green and environmentally friendly, and will not cause corrosion to semiconductor components. Therefore, they can be applied to the cleaning of different types of semiconductor components. Compared with the traditional use of acid or alkali solution and various solvents for component cleaning, the technical solution of the present invention has positive significance for environmental protection while ensuring good cleaning effect and no damage to components. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] Figure 1 The figure is a simplified schematic diagram of a device for cleaning semiconductor components according to the present invention.

[0044] Figure 2 FIG. 4 is a schematic diagram of another device for cleaning semiconductor components according to the present invention.

[0045] Figure 3 The figure is a schematic flow chart of a method for cleaning semiconductor components according to the present invention.

[0046] Figure 4The scanning electron microscope images and energy dispersive X-ray spectroscopy images of the surface of the yttrium oxide ceramic coating of the shower head electrode of the embodiment of the present invention before and after cleaning are as follows:

[0047] Wherein, a1 is a scanning electron microscope image of the surface of the yttrium oxide ceramic coating of the shower head electrode before cleaning, and a2 is an energy dispersion X-ray spectroscopy image of a specific area of ​​the surface of the yttrium oxide ceramic coating of the shower head electrode before cleaning;

[0048] b1 is a scanning electron microscope image of the surface of the yttrium oxide ceramic coating of the shower head electrode after cleaning, and b2 is an energy dispersive X-ray spectroscopy image of a specific area of ​​the surface of the yttrium oxide ceramic coating of the shower head electrode after cleaning.

[0049] Figure 5 The scanning electron microscope image and the energy dispersion X-ray spectroscopy image of the specific area of ​​the yttrium oxide ceramic coating surface of the shower head electrode of Comparative Example 1 of the present invention are as follows:

[0050] Wherein, a1 is a scanning electron microscope image of the surface of the yttrium oxide ceramic coating of the shower head electrode before cleaning, and a2 is an energy dispersion X-ray spectroscopy image of a specific area of ​​the surface of the yttrium oxide ceramic coating of the shower head electrode before cleaning;

[0051] b1 is a scanning electron microscope image of the surface of the yttrium oxide ceramic coating of the shower head electrode after cleaning, and b2 is an energy dispersive X-ray spectroscopy image of a specific area of ​​the surface of the yttrium oxide ceramic coating of the shower head electrode after cleaning.

[0052] Figure 6 The scanning electron microscope image and the energy dispersion X-ray spectroscopy image of the specific area of ​​the yttrium oxide ceramic coating surface of the shower head electrode of Comparative Example 2 of the present invention are as follows:

[0053] Wherein, a1 is a scanning electron microscope image of the surface of the yttrium oxide ceramic coating of the shower head electrode before cleaning, and a2 is an energy dispersion X-ray spectroscopy image of a specific area of ​​the surface of the yttrium oxide ceramic coating of the shower head electrode before cleaning;

[0054] b1 is a scanning electron microscope image of the surface of the yttrium oxide ceramic coating of the shower head electrode after cleaning, and b2 is an energy dispersive X-ray spectroscopy image of a specific area of ​​the surface of the yttrium oxide ceramic coating of the shower head electrode after cleaning.

[0055] Figure identification: 1-first container, 2-second container, 3-control unit, 31-first pipeline, 32-second pipeline, 33-third pipeline, 331-cleaning nozzle, 34-fourth pipeline, 4-boost metering pump, 5-air compressor, 6-semiconductor components, 7-special fixture. DETAILED DESCRIPTION

[0056] The technical solution of the present invention will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0057] In the description of the present invention, it should be noted that the terms "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0058] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected" and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0059] It should be noted that the drawings are all in very simplified form and use inaccurate ratios, and are only used to conveniently and clearly assist in explaining the embodiments of the present invention.

[0060] In the semiconductor manufacturing process, cleaning is a critical step to remove various contaminants that may exist on semiconductor components. If these contaminants cannot be removed efficiently, they may affect the performance and yield of the product, or even cause device failure. Although there are currently a variety of cleaning technologies, each of these cleaning technologies still has many defects, such as:

[0061] (1) Wet cleaning: Wet cleaning usually uses chemical solutions (such as organic isopropyl alcohol, nitric acid, hydrofluoric acid, SC-1 and SC-2, etc.) or deionized water to remove particulate contaminants on the surface of semiconductor components through chemical reactions. However, this cleaning method relies on chemical reagents and may cause damage to the surface of semiconductor components, such as excessive corrosion. It also requires precise control of the concentration, temperature and cleaning time of the cleaning solution, and has high process requirements. In addition, these aqueous solutions have high surface tension. For semiconductor components with high surface roughness, their wettability and permeability are weak, resulting in the inability to effectively remove hydrophobic particulate contaminants mixed in the surface and pores of semiconductor components.

[0062] (2) Dry cleaning: Dry cleaning uses gas, plasma, laser or solid particles to clean. Although it avoids the problem of chemical solutions in wet cleaning, its equipment cost is high and the operation is complicated; or it has specific requirements for the surface properties of certain materials, is not suitable for all types of semiconductor components, and cannot remove certain specific particle contaminants.

[0063] (3) Ultrasonic cleaning: Although ultrasonic cleaning can penetrate into tiny gaps for cleaning, excessive power may cause damage to precision parts. The choice of cleaning medium has a great impact on the cleaning effect. Improper selection may result in incomplete cleaning or damage to parts. Ultrasonic cleaning may not be able to completely remove all types of contaminants, especially extremely fine particles.

[0064] At present, carbon dioxide cleaning technology is gaining more and more attention in the semiconductor manufacturing process due to its environmentally friendly, residue-free, and non-destructive characteristics. Carbon dioxide cleaning is a type of dry cleaning that uses the characteristics of carbon dioxide in different states to remove particulate contaminants on semiconductor components. According to the physical state and usage of carbon dioxide, it is mainly divided into solid dry ice carbon dioxide cleaning, carbon dioxide snowflake cleaning, and supercritical carbon dioxide cleaning, but the principles of the three cleaning methods are not the same:

[0065] (1) Solid dry ice carbon dioxide cleaning uses solid dry ice particles to spray at high speed onto the surface of the semiconductor parts to be cleaned. The solid dry ice particles quickly sublimate (directly change from solid to gas) after impacting the surface. The energy and volume expansion generated can break up and remove dirt. However, solid dry ice particles are relatively large, and their diameter is usually at the millimeter level, so they are mainly used to clean hard steel surfaces.

[0066] (2) Carbon dioxide snowflake cleaning technology is a technology that uses carbon dioxide to become liquid under high pressure conditions, and then quickly decompresses and amplifies it at room temperature to turn the liquid carbon dioxide into a snowflake-like substance, and uses physical and chemical forces to clean the adhering pollutants. In the carbon dioxide snowflake cleaning technology, in addition to using the cooling, dissolving and volatilizing properties of carbon dioxide, the temperature difference between the carbon dioxide snowflake and the surface of the substrate is also used to quickly peel off the pollutants through the characteristics of rapid expansion and contraction, thereby achieving the purpose of cleaning. The carbon dioxide snowflake particles are extremely small, and their diameters are usually at the micron level, which is not easy to damage the surface of the substrate.

[0067] (3) Supercritical carbon dioxide cleaning uses carbon dioxide in a supercritical state to dissolve and remove pollutants on the surface of semiconductor components. It is an intermittent cleaning process.

[0068] Although the above three carbon dioxide cleaning technologies have the characteristics of high efficiency and environmental protection, the particulate pollutants on semiconductor components have strong adhesion and different physical and chemical properties. In addition, the surface charge positive and negative properties of different particulate pollutants are also different. The above cleaning technologies are also extremely easy to cause the particulate pollutants to be re-adsorbed and agglomerated on the surface of semiconductor components. Therefore, using only carbon dioxide cleaning technology cannot effectively remove particulate pollutants on semiconductor components.

[0069] In order to solve the above technical problems, the present invention provides a device and method for cleaning semiconductor parts, wherein the device at least comprises a first container for containing liquid carbon dioxide, a second container for containing an enhanced cleaning agent, a control unit, and a boost metering pump. When cleaning semiconductor parts, the boost metering pump is used to boost the pressure of the enhanced cleaning agent and control the input amount, and the liquid carbon dioxide and the enhanced cleaning agent are input into the control unit, so that the liquid carbon dioxide and the enhanced cleaning agent are evenly mixed in the control unit, and the formed mixture is sprayed onto the surface of the semiconductor parts to clean the semiconductor parts.

[0070] The present invention adds liquid carbon dioxide, polar solvent and ionic liquid surfactant to the control unit, and sprays the solid carbon dioxide snowflake particles generated by the liquid carbon dioxide through the cleaning nozzle to produce an explosion effect when they come into contact with the surface of the semiconductor component, thereby removing non-polar particle pollutants; the polar solvent dissolves and removes the polar particle pollutants, and the ionic liquid surfactant wraps the particle pollutants to prevent them from being adsorbed on the surface of the semiconductor component again; the air flow generated by the compressed air not only plays a role in enabling the solid carbon dioxide snowflake particles and the enhanced cleaning agent to obtain a higher speed (kinetic energy), but also can sweep and peel the particle pollutants from the surface. The gas-liquid-solid three-phase mixture formed by the solid carbon dioxide snowflake particles, gaseous carbon dioxide, liquid enhanced cleaning agent and air flow synergistically plays a cleaning role, efficiently removing various types of particle pollutants on the semiconductor components without causing damage to them.

[0071] like Figure 1 As shown, the present invention provides a device for cleaning semiconductor components, comprising at least:

[0072] A first container 1, wherein the first container 1 is used to contain liquid carbon dioxide;

[0073] A second container 2, wherein the second container 2 is used to hold an enhanced cleaning agent;

[0074] Control unit 3;

[0075] Booster metering pump 4;

[0076] The first container 1 is connected to the control unit 3 through a first pipeline 31;

[0077] The second container 2 is connected to the control unit 3 via a second pipeline 32;

[0078] The boost metering pump 4 is arranged on the second pipeline 32;

[0079] The mixture of the liquid carbon dioxide and the enhanced cleaning agent formed in the control unit 3 is sprayed onto the surface of the semiconductor component 6 through the third pipeline 33 and the cleaning nozzle 331 to clean the semiconductor component 6.

[0080] The control unit is provided with at least three joints, the first joint is used to connect to the carbon dioxide cylinder, the carbon dioxide cylinder is used to store liquid carbon dioxide, to ensure a stable supply of carbon dioxide during the cleaning process; the second joint is used to connect to the compressed air equipment, the compressed air equipment is used to provide compressed air; the third joint is connected to the cleaning nozzle, the cleaning nozzle is used to spray liquid carbon dioxide etc. to form solid carbon dioxide snowflake particles and enhanced cleaning agent mixture and act on the surface of the object to be cleaned, thereby completing the cleaning. In some embodiments, the control unit can be a snowflake cleaning machine.

[0081] In order to input the enhanced cleaning agent into the control unit 3, a booster metering pump 4 is provided on the second pipeline 32 between the control unit 3 and the second container 2. The booster metering pump 4 can accurately control the input amount and input flow rate of the enhanced cleaning agent so as to reach a preset ratio with the liquid carbon dioxide, and can also boost the pressure of the enhanced cleaning agent so that it can be smoothly input into the control unit 3.

[0082] In some embodiments, such as Figure 1 As shown, the first container 1 is connected to the control unit 3 through a first pipeline 31, and the second container 2 is connected to the control unit 3 through a second pipeline 32. The first pipeline 31 and the second pipeline 32 are independently arranged. The liquid carbon dioxide in the first container 1 and the enhanced cleaning agent in the second container 2 enter the control unit 3 through different pipelines respectively and are evenly mixed in the control unit 3.

[0083] In other embodiments, Figure 2 As shown, the second pipeline 32 is interconnected with the first pipeline 31, and the liquid carbon dioxide in the first container 1 and the enhanced cleaning agent in the second container 2 enter through the first pipeline 31 and the second pipeline 32 respectively, are evenly mixed in the first pipeline 31, and then enter the control unit 3 together; liquid carbon dioxide can also be introduced through the first pipeline 31 first, and then the enhanced cleaning agent is introduced through the second pipeline 32; or, the enhanced cleaning agent is introduced through the second pipeline 32 first, and then the liquid carbon dioxide is introduced through the first pipeline 31.

[0084] In order to spray the mixture evenly onto the surface of the semiconductor component 6, so as to achieve more efficient cleaning. A cleaning nozzle 331 is provided at the end of the third pipeline 33, and the mixture is sprayed onto the surface of the semiconductor component 6 through the cleaning nozzle 331. On the one hand, during the cleaning process, the distance between the cleaning nozzle 331 and the semiconductor component 6 will affect the impact force and coverage of the solid carbon dioxide snowflake particles. If the distance is too close, the impact force may be too large, causing damage to the surface of the semiconductor component 6; if the distance is too far, the impact force may be insufficient, so that the particle pollutants cannot be effectively removed. The appropriate distance helps to ensure that the mixture is evenly sprayed onto the surface of the semiconductor component 6 to ensure the consistency and thoroughness of the cleaning. As an example, the distance between the cleaning nozzle 331 and the semiconductor component 6 is 0cm to 30cm. On the other hand, a certain angle is formed between the cleaning nozzle 331 and the semiconductor component 6, which can help to evenly distribute the impact force, avoid over-cleaning of some areas and insufficient cleaning of other areas, and thus optimize the cleaning efficiency. By adjusting the angle of the cleaning nozzle 331, the spray direction of the mixture can be changed, so the angle of the cleaning nozzle 331 can be adjusted according to the surface contamination of the semiconductor component 6 to achieve different cleaning effects. In some embodiments, the angle between the cleaning nozzle 331 and the semiconductor component 6 is 10° to 90°. In addition, the injection pressure of the cleaning nozzle 331 is crucial to the cleaning effect. At high pressure, the jet flow is mainly solid carbon dioxide snowflake particles, with the highest proportion reaching 45%, supplemented by enhanced cleaning agents; at low pressure, the jet flow is mainly a mixture of solid carbon dioxide snowflake particles and liquid carbon dioxide, supplemented by enhanced cleaning agents. Therefore, at high pressure, it is suitable for cleaning hard substrates and stubborn contaminants, and at low pressure, it is suitable for cleaning soft substrates and minor contaminants. As an example, the injection pressure of the cleaning nozzle is 0.2MPa to 1.6MPa.

[0085] The device also includes an air compressor 5, which is connected to the control unit 3 through a fourth pipeline 34. The air compressor 5 provides compressed air for the cleaning process. When liquid carbon dioxide, enhanced cleaning agent and compressed air pass through the cleaning nozzle 331, solid carbon dioxide snowflake particles are formed. Under the action of compressed air, the solid carbon dioxide snowflake particles are accelerated and sprayed onto the surface of the semiconductor component 6 to be cleaned. Some solid carbon dioxide snowflake particles will also liquefy and dissolve some non-polar organic pollutants, and combined with the explosion effect, the pollutants on the surface of the component are effectively removed, and efficient and environmentally friendly surface cleaning is achieved. In addition, since the enhanced cleaning agent is mainly a mixture of polar solvents and ionic liquid surfactants, their phase changes are different from carbon dioxide, so even when passing through the cleaning nozzle 331, it will not be gasified under reduced pressure and high-speed conditions. A small amount of fine solid particles may be formed due to low temperature, but they will also quickly liquefy after contacting the surface of the semiconductor component 6 to be cleaned, which plays a role in dissolving polar organic pollutants and preventing particle back adsorption. In some embodiments, a pre-filter is also provided between the air compressor 5 and the control unit 3 to filter and remove dust, oil stains and water vapor in the air.

[0086] The device also includes a special jig 7, which is customized according to the size of the semiconductor component 6. Before cleaning the semiconductor component 6, the semiconductor component 6 is placed on the special jig 7, which can not only ensure the precise positioning of the semiconductor component 6 during the cleaning process, but also allow the cleaning liquid or gas to evenly contact all surfaces of the semiconductor component 6, thereby improving the cleaning efficiency and ensuring that all areas can be effectively cleaned.

[0087] like Figure 3 As shown, the present invention provides a method for cleaning semiconductor components, comprising at least the following steps:

[0088] Step S1, providing the above-mentioned device for cleaning semiconductor components.

[0089] After placing the semiconductor component 6 on the special fixture 7, the two are placed together in a clean room to prevent the semiconductor component 6 from being secondary contaminated during the cleaning process. In order to achieve a higher cleanliness level, the cleanliness level of the clean room is Class 10 or Class 100.

[0090] Step S2, inputting liquid carbon dioxide from the first container 1 into the control unit 3 through the first pipeline 31, inputting the enhanced cleaning agent from the second container 2 into the control unit 3 through the second pipeline 32, and pressurizing the enhanced cleaning agent and controlling the input amount by the boost metering pump 4.

[0091] Liquid carbon dioxide is a colorless, odorless, non-toxic gas at room temperature, but can be compressed into a liquid state under high pressure, so it can be understood that in order to store liquid carbon dioxide, the first container 1 is usually a self-pressurized carbon dioxide cylinder, and the working pressure of the carbon dioxide cylinder is between 5MPa and 10MPa. In some embodiments, in order to be able to input a sufficient amount of liquid carbon dioxide into the control unit 3, the input pressure of the liquid carbon dioxide is set to 2MPa to 10MPa, and the input flow rate of the liquid carbon dioxide is 5L / h to 30L / h.

[0092] At the same time, in order for the liquid carbon dioxide to enter the control unit 3, solid carbon dioxide snowflake particles are formed when passing through the cleaning nozzle 331, and these solid carbon dioxide snowflake particles are sprayed onto the semiconductor component 6 to be cleaned at a certain speed, the air compressor 5 inputs compressed air into the control unit 3 through the fourth pipeline 34, the input pressure of the compressed air is 0.5MPa~1MPa, and the working input flow rate of the compressed air is 10m 3 / h~300m 3 / h.

[0093] In some embodiments, Figure 2 As shown, when the first pipeline 31 is connected to the second pipeline 32, since the liquid carbon dioxide input by the first pipeline 31 has a certain pressure, in order to smoothly input the enhanced cleaning agent into the second pipeline 32, and then mix with the liquid carbon dioxide in the first pipeline 31, and finally enter the control unit 3 together, the function of the boost metering pump 4 includes both controlling the input amount of the enhanced cleaning agent and boosting the pressure of the enhanced cleaning agent. The boost pressure of the boost metering pump 4 on the enhanced cleaning agent is greater than the input pressure of the liquid carbon dioxide. In actual applications, the boost pressure of the boost metering pump 4 on the enhanced cleaning agent is 3MPa~12MPa.

[0094] In other embodiments, Figure 1 As shown, when the first pipeline 31 and the second pipeline 32 are independently arranged and not connected to each other, since the liquid carbon dioxide inputted by the first pipeline 31 has a certain pressure, it is also necessary to pressurize the enhanced cleaning agent so that it can smoothly enter the control unit 3. At this time, the function of the boost metering pump 4 is not only to control the input amount of the enhanced cleaning agent, but also to pressurize the enhanced cleaning agent.

[0095] It is understood that high-purity liquid carbon dioxide is essential for carbon dioxide snowflake cleaning technology. Liquid carbon dioxide with higher purity can produce a more uniform and consistent cleaning effect when converted into solid carbon dioxide snowflake particles, and can also avoid introducing new contaminants during the cleaning process. In some embodiments, the purity of the liquid carbon dioxide is greater than 99.99%, preferably greater than 99.999%.

[0096] Similarly, high-purity enhanced cleaning agents also play a key role in the semiconductor cleaning process. High-purity enhanced cleaning agents have low impurity content, which reduces the risk of introducing new contaminants during the cleaning process. In some embodiments, the purity of the enhanced cleaning agent is greater than 98%, preferably greater than 99%.

[0097] Step S3, the liquid carbon dioxide and the enhanced cleaning agent are uniformly mixed in the control unit 3, and the formed mixture is sprayed onto the surface of the semiconductor component 6 through the third pipeline 33 and the cleaning nozzle 331 to clean the semiconductor component 6; wherein the enhanced cleaning agent contains at least a polar solvent, and the solidification temperature of the polar solvent is lower than -56.6°C.

[0098] It is understandable that after the liquid carbon dioxide enters the control unit 3, the main function of the control unit 3 is to control the working pressure and working flow of the input liquid carbon dioxide, the working pressure, working flow and injection pressure of the compressed air. Then it is sprayed by the cleaning nozzle 331 with a unique structure. As the pressure in the nozzle mouth of the cleaning nozzle 331 decreases, carbon dioxide bubbles are formed and the percentage of gas increases until the gas-solid boundary is reached, and then it is converted into solid carbon dioxide snowflake particles with a diameter of 1μm to 200μm through thermodynamic and physical processes. On the one hand, when these solid carbon dioxide snowflake particles are sprayed onto the surface of the semiconductor component 6, they will quickly sublimate from the solid state to the gas state, thereby producing a micro-explosion effect. The energy released in this process can effectively strip and remove the particle contaminants on the surface of the semiconductor component 6. On the other hand, the air flow generated by the compressed air impacts the surface of the semiconductor component 6, and physically reacts with these particle contaminants, further sweeping and stripping these particle contaminants from the surface of the semiconductor component 6. In the above-mentioned carbon dioxide snowflake cleaning method, no chemical cleaning agent is used, so it is environmentally friendly, will not cause damage to the semiconductor component 6, and can be cleaned efficiently. In addition, since the solid carbon dioxide snowflake particles will directly sublime into a gaseous state when contacting the semiconductor component 6, no residue will be left on the surface of the semiconductor component 6.

[0099] The size of the solid carbon dioxide snowflake particles formed by liquid carbon dioxide has a certain influence on the cleaning effect, and the particle size is usually between 1μm and 200μm. The injection pressure of liquid carbon dioxide, the injection pressure of compressed air, the ratio of the gas-liquid-solid three-phase mixture injected onto the surface of semiconductor components, and the shape and size of the cleaning nozzle will all affect the size of the final particles. Within a certain range, the greater the injection pressure of liquid carbon dioxide and the injection pressure of compressed air, the larger the particles. Therefore, in practical applications, it is necessary to select different injection pressures of liquid carbon dioxide and compressed air according to the hardness of the semiconductor component substrate or the severity of the particle contaminants on its surface.

[0100] Liquid carbon dioxide has a low polarity, which is conducive to cleaning and removing non-polar particle contaminants, but is not conducive to removing polar particle contaminants on the surface of semiconductor components 6. In order to achieve a better cleaning effect, in some embodiments, the enhanced cleaning agent contains a polar solvent, which can remove polar particle contaminants on the surface of semiconductor components 6. At the same time, the molecules in the polar solvent may form a solvation layer on the surface of the particle contaminants, further reducing the direct contact between the particle contaminants and the surface of the semiconductor components 6, making it easier to remove polar particle contaminants.

[0101] It is understood that in order to prevent the polar solvent from solidifying during the cleaning process of the semiconductor component 6, thereby failing to remove polar particle contaminants and causing damage to the surface of the semiconductor component 6, the solidification temperature of the polar solvent is lower than -56.6°C to ensure that the polar solvent remains in a liquid state while the liquid carbon dioxide is converted into solid carbon dioxide snowflake particles. The polar solvent includes ethanol, isopropanol, acetone, butanone, ethylene glycol butyl ether, propylene glycol methyl ether, propylene glycol methyl ether acetate, 3M TM Novec TM Any one or more of 7100DL electronic fluoride liquid.

[0102] During the cleaning process, although the non-polar particulate pollutants and polar particulate pollutants can be temporarily separated from the surface of the semiconductor component 6 by liquid carbon dioxide and polar solvents, these particulate pollutants are likely to be re-adsorbed to the surface of the semiconductor component 6 through electrostatic effects, polar effects, etc. In order to further achieve a better cleaning effect, that is, to prevent the removed non-polar particulate pollutants and polar particulate pollutants from being reversely adsorbed, in some embodiments, the enhanced cleaning agent contains a surfactant in addition to a polar solvent. The surfactant is an ionic liquid surfactant, and its surface activity comes from the amphiphilic nature of its molecular structure, that is, one end of the molecule is a hydrophilic polar group, and the other end is a hydrophobic non-polar group. In addition to having surface activity properties, the ionic liquid surfactant described in the present invention also has good solvent properties, it has almost no volatility, does not cause air pollution, has strong solubility, has good solubility for both organic and inorganic substances, and further enhances the cleaning effect.

[0103] Similarly, in order to prevent the surfactant from solidifying during the cleaning process of the semiconductor component 6, thereby failing to wrap the non-polar particulate pollutants and polar particulate pollutants, and causing damage to the surface of the semiconductor component 6, the solidification temperature of the surfactant is lower than -56.6°C, so as to ensure that the ionic liquid surfactant remains in a liquid state while the liquid carbon dioxide is converted into solid carbon dioxide snowflake particles. In some embodiments, the surfactant is any one or more of the ionic liquid surfactants 1-dodecyl-3-methylimidazole-β-naphthol sulfonate, 1-ethyl-3-methylimidazole methanesulfonate, tetramethylammonium glycine, 1-butyl-3-methylimidazole tetrafluoroborate, 1-hexyl-3-methylimidazole tetrafluoroborate, and 1-hexyl-3-methylimidazole hexafluorophosphate.

[0104] It can be seen that the mixture finally sprayed from the third pipeline 33 and the cleaning nozzle 331 to the surface of the semiconductor component 6 contains three phases of gas, liquid and solid, which are respectively the air flow generated by compressed air, the liquid enhanced cleaning agent, the solid carbon dioxide snowflake particles, and the gas carbon dioxide. The gas-liquid-solid three-phase forms a mixture. Under the action of the air flow and the liquid enhanced cleaning agent, the solid carbon dioxide snowflake particles are avoided from agglomerating, and the solid carbon dioxide snowflake particles are dispersed more evenly. The gas-liquid-solid three-phase mixture synergistically plays a cleaning role to achieve the best cleaning effect. In the method for cleaning semiconductor components of the present invention, the carbon dioxide snowflake cleaning produced by liquid carbon dioxide is mainly used, and the auxiliary cleaning produced by the enhanced cleaning agent is supplemented. In some embodiments, by volume ratio, the liquid carbon dioxide: the enhanced cleaning agent = (80% to 99.9%): (0.1% to 20%). In the enhanced cleaning agent formed by mixing a polar solvent and an ionic liquid surfactant, the polar solvent is mainly used to remove polar particle pollutants, and the ionic liquid surfactant is used to wrap the particle pollutants to prevent reverse adsorption. In some embodiments, the polar solvent:the surfactant=(97% to 99.99%):(0.01% to 3%) by volume ratio.

[0105] In order to remove the trace amount of polar solvents and ionic liquid surfactants remaining on the surface of the semiconductor component 6, the semiconductor component 6 is cleaned more thoroughly. After the above step S3, it also includes using ultrapure water to clean the semiconductor component 6 several times. In some embodiments, the resistivity of the ultrapure water is greater than 4MΩ·cm, and the temperature of the ultrapure water is 25°C to 90°C. After further cleaning the semiconductor component 6 with ultrapure water, the semiconductor component 6 is placed in an oven for heating and drying to remove the ultrapure water on the surface of the semiconductor component 6. In some embodiments, the temperature of the oven is 60°C to 130°C, and the heating and drying time is 1h to 6h.

[0106] In some embodiments, the device and method for cleaning semiconductor components can be used to clean any one of a confinement ring, a sealing ring, a shower head electrode, an electrostatic chuck, a chamber, an edge ring, a liner, an insulating ring, and a gas shower head. It is understandable that the device and method for cleaning semiconductor components provided by the present invention are not limited to cleaning the above-mentioned semiconductor components, but are also suitable for cleaning other semiconductor components whose surfaces produce a large amount of particulate contaminants due to plasma corrosion, reactant deposition, etc., or for repairing and refurbishing semiconductor components that have been used for a period of time. The following embodiments and comparative examples are only described in detail using the shower head electrode as an example.

[0107] Example

[0108] This embodiment uses the device and method for cleaning semiconductor components of the present invention to clean the yttrium oxide ceramic coating on the surface of the shower head electrode, including the following steps:

[0109] Step 1: In a Class 100 clean room, place the shower head electrode to be cleaned on a special fixture.

[0110] Step 2, connect the liquid carbon dioxide stored in the carbon dioxide cylinder to connector No. 1 of the control unit through pipeline No. 1, set the input pressure of the liquid carbon dioxide to 7 MPa, and the input flow rate of the liquid carbon dioxide to 15 L / h.

[0111] Step 3, pre-prepare an enhanced cleaning agent formed by a polar solvent and a surfactant, that is, mix 70% of isopropanol, 29.8% of propylene glycol methyl ether, and 0.2% of 1-dodecyl-3-methylimidazole-β-naphthol sulfonate to obtain an enhanced cleaning agent, connect it to pipeline No. 1 through pipeline No. 2, and use a booster metering pump to quantitatively control the enhanced cleaning agent to be input into the liquid carbon dioxide at an input flow rate of 1L / h.

[0112] Step 4: Connect the air compressor to the No. 2 connector of the control unit through the No. 4 pipe, and set the parameters of the air compressor so that the input pressure of the compressed air generated by the air compressor is 0.5 MPa and the working input flow rate is 30m 3 / h.

[0113] Step 5, connect pipe No. 3 to connector No. 3 of the control unit. A high-performance cleaning nozzle is provided at the end of pipe No. 3. The cleaning nozzle forms an angle of 30° with the shower head electrode to be cleaned, and the distance between the two is 10 cm. A mixture of liquid carbon dioxide and enhanced cleaning agent (90% liquid carbon dioxide, 10% enhanced cleaning agent) formed in the control unit is sprayed from the cleaning nozzle to the surface of the shower head electrode to clean the shower head electrode; wherein, the flow rate of the mixture is 100 m / s, the spraying pressure is 0.3 MPa, and the cleaning time is 60 s.

[0114] Step 6: rinse the cleaned shower head electrode in ultrapure water with a resistivity of 4 MΩ·cm to further remove trace amounts of polar solvents and surfactants remaining on the shower head electrode surface. The ultrapure water temperature is 50°C and rinse for 3 times in total until there is no residue on the shower head electrode surface.

[0115] Step 7: Place the shower head electrode in a clean oven with a cleanliness level of Class 100 for heating and drying to remove residual moisture on the shower head electrode. The temperature of the clean oven is 100° C. and the heating and drying time is 3 hours.

[0116] After cleaning, a scanning electron microscope (SEM), an energy dispersive X-ray spectroscopy (EDX) and a surface particle counter were used to evaluate the cleaning effect of the embodiment.

[0117] Comparative Example 1

[0118] The cleaning method of this comparative example 1 is different from that of the embodiment in that only liquid carbon dioxide is used for snowflake cleaning, and the booster metering pump for adding polar solvent and ionic liquid surfactant is turned off.

[0119] After cleaning, the cleaning effect of Comparative Example 1 was evaluated using scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), and a surface particle counter.

[0120] Comparative Example 2

[0121] The cleaning method of this comparative example 2 adopts the conventional cleaning method in the prior art, comprising the following steps:

[0122] Step 1: In a Class 100 clean room, place the shower head electrode to be cleaned on a special fixture.

[0123] Step 2: soak the shower head electrode in isopropyl alcohol (IPA) solvent for 30 minutes, and then use a loofah to wipe the surface of the shower head electrode that needs to be cleaned for 5 minutes.

[0124] Step 3: Use 70° C. pure water to clean the shower head electrode under 40 kHz ultrasonic conditions for 30 minutes, with an ultrasonic power of 800 W.

[0125] Step 4: After flushing the shower head electrode with pure water for 5 minutes, continue to use solid dry ice carbon dioxide for cleaning for 2 minutes, and set the spray pressure of solid dry ice carbon dioxide to 0.5 MPa.

[0126] Step 5, use liquid 2 (SC-2) chemical solution to clean the shower head electrode for 15 minutes, then rinse with pure water for 5 minutes, and rinse three times until no chemical residues remain; wherein the composition of liquid 2 is ammonia water: hydrogen peroxide: pure water in a ratio of 1:1:15.

[0127] Step 6: Finally, use a clean oven with a cleanliness level of Class 100 to heat and dry the cleaned shower head electrode to remove the residual moisture on the shower head electrode; wherein the temperature of the clean oven is 100° C., and the heating and drying time is 3 hours.

[0128] After cleaning, the cleaning effect of Comparative Example 2 was evaluated using scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), and a surface particle counter.

[0129] Experimental results:

[0130] like Figure 4 The following are SEM images and EDX images of specific areas of the yttrium oxide ceramic coating on the shower head electrode before and after cleaning. The SEM images show that the pollutants on the surface of the shower head electrode in the embodiment of the present invention are completely cleaned, and the EDX images show that the carbon and fluorine pollutants are also removed.

[0131] like Figure 5 As shown, the SEM images and EDX images of specific areas magnified 500 times before and after cleaning of pollutants on the surface of the yttrium oxide ceramic coating of the shower head electrode in Comparative Example 1. According to the SEM images and EDX images, it can be seen that after only using liquid carbon dioxide snowflakes for cleaning in Comparative Example 1, a large amount of fluorocarbon and other particulate pollutants still remain on the surface of the yttrium oxide ceramic coating of the shower head electrode. This shows that the cleaning effect of the embodiment of the present invention is better than that of Comparative Example 1.

[0132] like Figure 6 As shown, the SEM images and EDX images of specific areas magnified 500 times before and after cleaning of pollutants on the surface of the yttrium oxide ceramic coating of the shower head electrode in Comparative Example 2. According to the SEM images and EDX images, it can be seen that there is an obvious damage layer within a specific area of ​​the surface of the yttrium oxide coating of the shower head electrode, indicating that conventional solid dry ice carbon dioxide cleaning is prone to damage semiconductor components, and the cleaning effect of the embodiment of the present invention is better than that of Comparative Example 2.

[0133] In addition, a surface particle counter (model: QIII Ultra TM ) The number of residual particles on the surface of the yttrium oxide ceramic coating of the shower head electrode after cleaning in the test embodiment, comparative example 1, and comparative example 2 was measured, and 9 test points were taken on the surface of the yttrium oxide ceramic coating of the shower head electrode. The results are shown in Table 1. After cleaning, the residual particles on the surface of the yttrium oxide ceramic coating of the shower head electrode of the embodiment of the present invention are zero, indicating that the removal efficiency of the particle pollutants has reached 100%; as shown in Tables 2 and 3, there are still a lot of particle residues of different particle sizes on the surface of the yttrium oxide ceramic coating of the shower head electrode of comparative examples 1 and 2, indicating that the removal efficiency of the particle pollutants in comparative examples 1 and 2 is much lower than that of the present invention.

[0134] Table 1: Number of residual particulate contaminants per square centimeter on the surface of the yttrium oxide ceramic coating of the shower head electrode after cleaning in the embodiment

[0135]

[0136] Table 2: Number of residual particulate contaminants per square centimeter on the surface of the yttrium oxide ceramic coating of the shower head electrode after cleaning in Comparative Example 1

[0137]

[0138] Table 3: Number of residual particulate contaminants per square centimeter on the surface of the yttrium oxide ceramic coating of the shower head electrode after cleaning in Comparative Example 2

[0139]

[0140] In summary, the device of the present invention comprises a first container for holding liquid carbon dioxide, a second container for holding an enhanced cleaning agent, a control unit, and a boost metering pump for pressurizing and controlling the input amount of the enhanced cleaning agent, wherein the enhanced cleaning agent at least comprises a polar solvent with a freezing point lower than -56.6°C; when the device is used to clean semiconductor components, the mixture is sprayed onto the surface of the semiconductor components to clean the semiconductor components, wherein the liquid carbon dioxide produces solid carbon dioxide snowflake particles when sprayed, and the solid carbon dioxide snowflake particles produce an explosion effect on the surface of the semiconductor components; the enhanced cleaning agent can dissolve polar organic pollutants, and further, the enhanced cleaning agent also comprises an ionic liquid surfactant with a freezing point lower than -56.6°C, and the surfactant wraps various types of particulate pollutants to prevent the particulate pollutants from being adsorbed back onto the semiconductor components. The gas-liquid-solid three-phase mixture synergistically exerts a cleaning effect to achieve more efficient cleaning of semiconductor components.

[0141] The present invention provides a carbon dioxide snowflake cleaning technology, which can replace traditional acid or alkali cleaning agents and other pollutant emissions, and has positive significance for environmental protection. The implementation of this technical solution promotes the green production and sustainable development of enterprises. By reducing pollution emissions, enterprises can better respond to the global call for environmental protection and sustainable development, establish a green, environmentally friendly, and low-carbon corporate image, and make positive contributions to the sustainable development of society.

[0142] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. A device for cleaning semiconductor components, characterized in that: At least: a first container, the first container being used to contain liquid carbon dioxide; a second container, the second container being used to hold an enhanced cleaning agent; Control unit; Booster metering pump; The first container is connected to the control unit via a first pipeline; The second container is connected to the control unit via a second pipeline; The boost metering pump is arranged on the second pipeline; The mixture of the liquid carbon dioxide and the enhanced cleaning agent formed in the control unit is sprayed onto the surface of the semiconductor component through the third pipeline and the cleaning nozzle to clean the semiconductor component.

2. The device according to claim 1, characterized in that The device further comprises an air compressor, which is connected to the control unit via a fourth pipeline.

3. The device according to claim 1, characterized in that The second pipeline is connected to the first pipeline, so that the second container is connected to the control unit.

4. The device according to claim 1, characterized in that The cleaning nozzle is arranged at the end of the third pipeline, and the mixture is sprayed onto the surface of the semiconductor component through the cleaning nozzle.

5. The device according to claim 1, characterized in that The control unit is a snowflake cleaning machine.

6. The device according to claim 1, characterized in that The semiconductor components at least include any one of a confinement ring, a sealing ring, an electrostatic chuck, a chamber, an edge ring, a liner, an insulating ring, and a gas shower head.

7. A method for cleaning semiconductor components, characterized in that: At least the following steps are included: Provide a device for cleaning semiconductor components as claimed in any one of claims 1 to 6; Inputting liquid carbon dioxide from the first container into the control unit through a first pipeline, inputting an enhanced cleaning agent from the second container into the control unit through a second pipeline, and pressurizing and controlling the input amount of the enhanced cleaning agent by a booster metering pump; The liquid carbon dioxide and the enhanced cleaning agent are uniformly mixed in the control unit, and the formed mixture is sprayed onto the surface of the semiconductor component through the third pipeline and the cleaning nozzle to clean the semiconductor component; Wherein, the enhanced cleaning agent at least contains a polar solvent, and the solidification temperature of the polar solvent is lower than -56.6°C.

8. The method according to claim 7, characterized in that By volume ratio, the liquid carbon dioxide: the enhanced cleaning agent = (80% to 99.9%): (0.1% to 20%).

9. The method according to claim 7, characterized in that The polar solvents include ethanol, isopropanol, acetone, butanone, ethylene glycol butyl ether, propylene glycol methyl ether, propylene glycol methyl ether acetate, 3M TM Novec TM Any one or more of 7100DL electronic fluoride liquid.

10. The method according to claim 7, characterized in that The enhanced cleaning agent further comprises a surfactant, wherein the solidification temperature of the surfactant is lower than -56.6°C.

11. The method according to claim 10, characterized in that By volume ratio, the polar solvent:the surfactant=(97% to 99.99%):(0.01% to 3%).

12. The method according to claim 10, characterized in that The surfactant is an ionic liquid surfactant.

13. The method according to claim 12, characterized in that The ionic liquid surfactant is any one or more of 1-dodecyl-3-methylimidazolium-β-naphthol sulfonate, 1-ethyl-3-methylimidazolium methanesulfonate, tetramethylammonium glycinate, 1-butyl-3-methylimidazolium tetrafluoroborate, 1-hexyl-3-methylimidazolium tetrafluoroborate, and 1-hexyl-3-methylimidazolium hexafluorophosphate.

14. The method according to claim 7, characterized in that The input pressure of the liquid carbon dioxide is 2MPa-10MPa, and the input flow rate of the liquid carbon dioxide is 5L / h-30L / h.

15. The method according to claim 7, characterized in that The boosting pressure of the boosting metering pump on the enhanced cleaning agent is greater than the input pressure of the liquid carbon dioxide.

16. The method according to claim 7, characterized in that The boosting pressure of the boosting metering pump on the enhanced cleaning agent is 3MPa to 12MPa.

17. The method according to claim 7, characterized in that The method further includes: providing an air compressor, wherein the air compressor inputs compressed air into the control unit through a fourth pipeline.

18. The method according to claim 17, characterized in that The input pressure of the compressed air is 0.5MPa to 1MPa, and the working input flow rate of the compressed air is 10m 3 / h~300m 3 / h.

19. The method according to claim 7, characterized in that The cleaning nozzle is arranged at the end of the third pipeline, the distance between the cleaning nozzle and the semiconductor component is 0cm-30cm, the angle between the cleaning nozzle and the semiconductor component is 10°-90°, and the spray pressure of the cleaning nozzle is 0.2MPa-1.6MPa.

20. The method of claim 7, wherein: After the semiconductor components are cleaned, the method further includes washing the semiconductor components with ultrapure water.

21. The method of claim 20, wherein: The resistivity of the ultrapure water is greater than 4 MΩ·cm, and the temperature of the ultrapure water is 25° C. to 90° C.

22. The method of claim 20, wherein: After the semiconductor component is cleaned with ultrapure water, the method further includes heating and drying the semiconductor component with an oven.

23. The method of claim 22, wherein: The temperature of the oven is 60° C. to 130° C., and the heating and drying time is 1 hour to 6 hours.

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