Target material structure

Abstract

The invention relates to a target material structure and a preparation method thereof.The target material structure comprises at least two target material layers and a connecting unit, and the target material layers are arranged in a stacked mode in the first direction and made of the same material; the connecting unit is located between every two adjacent target material layers, the connecting unit is connected with the adjacent target material layers in the first direction, the connecting unit comprises a first connecting layer, the material of the first connecting layer is the same as that of the target material layers, the first connecting layer is located in at least part of the area of the connecting unit, and the first connecting layer is connected with the target material layers in the second direction. And the thermal conductivity of at least part of the connecting unit is smaller than that of the target material layer. According to the target material structure, by arranging the connecting units with the heat conductivity not larger than that of the target material layer, in the process of gradual evaporation from top to bottom, heat conduction of the target material structure in the longitudinal direction can be optimized, longitudinal heat accumulation is avoided, and then the influence on the quality of the target material structure on the lower layer is avoided; and the evaporation performance of the target material structure and the final film forming quality are improved.

Description

Technical Field

[0001] The present application relates to the field of evaporation technology, and in particular to a target material structure. Background Art

[0002] In the existing evaporation coating process, the target material used is generally an integrated cylindrical target material formed by sintering. However, during the process of gradual evaporation from top to bottom, the conventional integrated cylindrical target material can generally only partially transfer heat on the upper surface of the target material in the lateral direction, while a large amount of heat will be transferred downward and accumulated in the longitudinal direction. Figure 1 As shown, it is a schematic diagram of the structure of the target material. The heat accumulated in the longitudinal direction will affect the physical properties of the lower layer of the target material that has not evaporated, and then affect the quality of the target material and the quality and performance of the film layer formed based on the target material. Summary of the invention

[0003] Based on this, it is necessary to provide a target material structure to address the problem that heat is transferred and accumulated in the longitudinal direction during the evaporation coating process of the target material in the prior art, thereby affecting the film quality.

[0004] In order to achieve the above object, on the one hand, the present invention provides a target material structure, comprising:

[0005] At least two target material layers are stacked along a first direction and are made of the same material;

[0006] A connecting unit is located between two adjacent target material layers, the connecting unit connects the adjacent target material layers in a first direction, the connecting unit includes a first connecting layer, the material of the first connecting layer is the same as the material of the target material layer, and the first connecting layer is located in at least a portion of the connecting unit, and the thermal conductivity of the connecting unit is less than the thermal conductivity of the target material layer.

[0007] In one embodiment, the material density of the first connecting layer is less than the material density of the target material layer.

[0008] In one of the embodiments, on a projection plane perpendicular to the first direction, an orthographic projection of the first connection layer overlaps with an orthographic projection of the target material layer.

[0009] In one embodiment, the connecting unit includes a first region and a second region, the first region is provided with the first connecting layer, on the projection plane perpendicular to the first direction, the orthographic projection area of ​​the first region is smaller than the orthographic projection area of ​​the target material layer, and the thermal conductivity of the second region is smaller than the thermal conductivity of the target material layer.

[0010] In one embodiment, the first connection layer is annular in shape, and the first connection layer is connected to the edge of the target material layer.

[0011] In one embodiment, the first connection layer includes a plurality of connection portions distributed in an annular manner.

[0012] In one embodiment, each of the target material layers includes at least two sub-target material portions of the same material, adjacent sub-target material portions are spliced ​​along the first direction, and a second connecting layer is provided between adjacent sub-target material portions, and the material of the second connecting layer is the same as that of the sub-target material portion.

[0013] In one embodiment, each of the target material layers includes at least two sub-target material portions of the same material, adjacent sub-target material portions are spliced ​​along a second direction perpendicular to the first direction, and a third connecting layer is also arranged between adjacent sub-target material portions, and the material of the third connecting layer is the same as that of the sub-target material portion.

[0014] In one embodiment, the thickness of the connecting unit is no more than one tenth of the thickness of the target material layer.

[0015] In one embodiment, the shape of the target layer includes a non-planar shaped structure.

[0016] In the embodiment of the present application, the target material structure includes a multi-layer target material layer. The multi-layer target material layers are stacked. And a connecting unit is set between two adjacent target material layers. The thermal conductivity of the connecting unit is less than the thermal conductivity of the target material layer. Therefore, the amount of heat transferred in the first direction can be effectively reduced by the connecting unit, thereby reducing the heat accumulation in the longitudinal direction of the target material structure, thereby avoiding affecting the quality of the target material structure of the lower layer, and improving the evaporation performance of the target material structure and the final film forming quality. At the same time, in the process of evaporation of the target material structure from top to bottom, the heat acting on the same target material layer can be better conducted in the second direction, so that the coating condition of the target material structure during the heating evaporation process is better. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0018] Figure 1 It is a schematic diagram of the main structure of a target material structure provided in the prior art;

[0019] Figure 2 is a schematic structural diagram of a target material structure provided in an embodiment;

[0020] Figure 3 A schematic diagram of the main structure of a target material layer of a target material structure provided in one embodiment;

[0021] Figure 4 It is a schematic diagram of the main structure of a first connecting layer of a target material structure provided in one embodiment;

[0022] Figure 5 A schematic diagram of a top view structure of another first connecting layer of a target material structure provided in an embodiment;

[0023] Figure 6 It is a schematic diagram of the main structure of the third first connecting layer of the target material structure provided in one embodiment;

[0024] Figure 7 It is a schematic diagram of the main structure of a fourth first connecting layer of a target material structure provided in an embodiment;

[0025] Figure 8 A schematic diagram of a top view of a fifth first connecting layer of a target material structure provided in an embodiment;

[0026] Fig. 9 A schematic diagram of a top view of a sixth first connecting layer of a target material structure provided in an embodiment;

[0027] Fig.10 A schematic diagram of a top view structure of a target material layer of a target material structure provided in an embodiment;

[0028] Fig.11 for Fig.10 A schematic diagram of the main structure of a seed target material portion in a target material layer;

[0029] Fig.12 for Fig.10 A schematic diagram of the main structure of another sub-target material portion in the target material layer;

[0030] Fig.13 for Fig.10 A schematic diagram of the main structure of the third sub-target material portion in the target material layer;

[0031] Fig.14 Another schematic diagram of a top view structure of a target material layer of a target material structure provided in an embodiment;

[0032] Fig.15 for Fig.14 A schematic diagram of the main structure of the target material layer;

[0033] Fig.16 A schematic diagram of a third top view structure of a target material layer of a target material structure provided in an embodiment;

[0034] Fig.17 for Fig.16Schematic diagram of the main structure of the target material layer.

[0035] Description of reference numerals:

[0036] 1-target layer, 11-sub-target portion, 2-connection unit, 21-first connection layer, 211-connection portion, 22-first region, 23-second region. DETAILED DESCRIPTION

[0037] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the present application are provided in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0038] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0039] In the description of the present application, it should be understood that if the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. appear, the orientation or position relationship indicated by these terms is based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.

[0040] In addition, if the terms "first" or "second" appear, these terms are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of this application, if the term "plurality" appears, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0041] In this application, unless otherwise clearly specified and limited, if the terms "installed", "connected", "connected", "fixed" and the like appear, these terms should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integrated connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances.

[0042] In the present application, unless otherwise clearly specified and limited, if there is a description that a first feature is "above" or "below" a second feature, etc., or similar descriptions appear, it can mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "above" and "above" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. The first feature being "below", "below" and "below" the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0043] It should be noted that if an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. If an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. If any, the terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in this application are for illustrative purposes only and do not represent the only implementation method.

[0044] See also Figure 2 , an embodiment of the present application provides a target material structure, the target material structure includes at least two target material layers 1 and a connecting unit 2. Among them, at least two target material layers 1 are stacked along a first direction (indicating a longitudinal direction). And the materials of each target material layer 1 are the same. The connecting unit 2 is located between two adjacent target material layers 1. The connecting unit 2 connects adjacent target material layers 1 in the first direction, and the connecting unit 2 includes a first connecting layer 21. The material of the first connecting layer 21 is the same as that of the target material layer 1, and the first connecting layer 21 is located in at least a part of the connecting unit 2, and the thermal conductivity of the connecting unit 2 is less than the thermal conductivity of the target material layer 1.

[0045] Specifically, the target layer 1 includes a metal target, a metal oxide target, a ceramic target or other suitable target. The thickness of the target layer 1 can range from 1 mm to 10 mm, for example. It should be noted that the specific number of target layers 1 can be selected according to actual conditions while satisfying the performance of the target structure, and is not limited here.

[0046] See also Figure 3 The shape of the target layer 1 includes a cylindrical, rectangular or other suitable planar structure. By setting the shape of the target layer 1 to a cylindrical, rectangular or other planar structure with uniform thickness and maintaining consistency, it can ensure that a film layer with uniform thickness is formed during the evaporation coating process, thereby ensuring the uniformity of the coating and improving the coating quality. In some embodiments, the shape of the target layer 1 can also be set to a non-planar shaped structure. In some coating processes that have different requirements for the film thickness in different regions, the shape of the target layer 1 can be designed as a non-planar shaped structure according to the actual coating requirements to achieve evaporation of film layers of different thicknesses in different regions.

[0047] In addition, for the connecting unit 2, the thermal conductivity of the connecting unit 2 located between the target material layers 1 is less than the thermal conductivity of the target material layer 1, thereby performing heat blocking in the first direction, reducing the heat conducted from the upper target material to the lower target material, and avoiding the influence of the lower target material in the subsequent coating process, such as excessive heat accumulation, which causes the properties of the lower target material to change, thereby affecting the electrical and optical properties of the subsequent coated film layer.

[0048] The first connection layer 21 is made of the same material as the target layer 1 and does not affect the quality of the coating, thereby ensuring the continuity of the coating.

[0049] See also Figure 4 In some embodiments, on a projection plane perpendicular to the first direction, the orthographic projection of the first connecting layer 21 overlaps with the orthographic projection of the target material layer 1, such as partially overlapping or completely overlapping. Exemplarily, the orthographic projection areas of the first connecting layer 21 and the target material layer 1 are equal, further reducing the impact on the coating uniformity.

[0050] At the same time, the material density of the first connection layer 21 is set to be smaller than the material density of the target material layer 1. The smaller the material density, the smaller the thermal conductivity, and the worse the thermal conductivity. Therefore, at this time, the thermal conductivity of the first connection layer 21 is smaller than the thermal conductivity of the target material layer 1, and the thermal conductivity of the connection unit 2 is smaller than the thermal conductivity of the target material layer 1, so that the heat conduction in the first direction can be effectively reduced, and the heat is prevented from continuously accumulating in the first direction, thereby avoiding affecting the properties of the target material structure of the lower layer.

[0051] Specifically, the shape of the first connection layer 21 can be set to be the same as the shape of the target layer 1. For example, when the shape of the target layer 1 is a planar structure such as a column or a rectangle, the shape of the first connection layer 21 can also be set to a planar structure such as a column or a rectangle. For another example, when the shape of the target layer 1 is a non-planar shaped structure, the shape of the first connection layer 21 can also be set to a non-planar shaped structure. By setting the shape of the first connection layer 21 to be the same as the shape of the target layer 1, adjacent target layers 1 can be effectively connected through the first connection layer 21.

[0052] At this time, the area between adjacent target layers 1 can be completely filled with the first connecting layer 21, so that the overall thickness of the target structure at each position in the second direction is uniform, reducing the impact on the uniformity of the coating. At the same time, the difficulty of the preparation process of the target structure can also be effectively reduced.

[0053] Also, see Figure 5 The connecting portion 2 includes a first connecting layer 21, and on a projection plane perpendicular to the first direction, when the orthographic projection of the first connecting layer 21 overlaps with the orthographic projection of the target layer 1, the material density at each position of the first connecting layer 21 can be kept consistent, thereby helping to ensure the uniformity of the coating and further reduce the difficulty of the preparation process of the target structure.

[0054] Of course, in some embodiments, when the connecting portion 2 includes a first connecting layer 21 and the orthographic projection of the first connecting layer 21 overlaps with the orthographic projection of the target material layer 1 on the projection plane perpendicular to the first direction, the material density of the first connecting layer 21 can also be set to be gradually distributed from the middle area to the edge area in the second direction, or the material density of the first connecting layer 21 is gradually distributed in the first direction, so as to meet special structural designs and coating requirements, such as in some coating processes with high requirements on film thickness uniformity, to further reduce the influence of the connecting layer on the uniformity of the coating thickness.

[0055] See also Figure 6 In some other embodiments, the connection unit 2 includes a first area 22 and a second area 23 .

[0056] A first connection layer 21 is disposed in the first region 22. The material of the first connection layer 21 is the same as that of the target layer 1, so that the continuity of the coating can be ensured.

[0057] Specifically, the material density of the first connection layer 21 in the first region 22 may be greater than the material density of the target layer 1, may be equal to the material density of the target layer 1, or may be less than the material density of the target layer 1. It only needs to satisfy that the overall thermal conductivity of the connection unit 2 composed of the first region 22 and the second region 23 is less than the thermal conductivity of the target layer 1, that is, the thermal conductivity of the connection unit 2 is less than the thermal conductivity of the target layer. Exemplarily, the material density of the first connection layer 21 is less than the material density of the target layer 1. By setting the material density of the first connection layer 21 to be less than the material density of the target layer 1, it is convenient to reduce the thermal conductivity of the connection unit 2 and optimize the thermal conduction of the target structure in the first direction. Exemplarily, the material density of the first connection layer 21 is greater than or equal to the material density of the target layer 1, but the area of ​​the first region where the first connection layer 21 is located can be set so that the overall thermal conductivity of the connection unit 2 composed of the first region 22 and the second region 23 is less than the thermal conductivity of the target layer 1, thereby reducing the heat accumulation of the target structure in the longitudinal direction and avoiding affecting the quality of the target structure of the lower layer.

[0058] On the projection plane perpendicular to the first direction, the orthographic projection area of ​​the first region 22 is smaller than the orthographic projection area of ​​the target layer 1, so that the first connection layer 21 fills part of the area between adjacent target layers 1. The area without the first connection layer 21 can form the second region 23.

[0059] The thermal conductivity of the second region 23 is less than the thermal conductivity of the target layer 1. For example, a gas is provided in the second region 23. The thermal conductivity of the gas is less than the thermal conductivity of the solid, and the thermal conductivity in the second region 23 of the connecting unit 2 is less than the thermal conductivity of the target layer 1. Therefore, during the heat conduction process, the accumulation of heat in the first direction can be reduced by the gas in the second region 23, thereby effectively improving the thermal conduction of the target structure in the first direction.

[0060] See also Figures 7 and 8 , under the condition that the performance of the target structure is met, the second region 23 can be a closed region or a non-closed region. No connecting layer material is provided in the second region 23, so the gas in the second region 23 can be any gas that meets the actual needs, as long as it can achieve the effect of thermal isolation in the first direction.

[0061] As an example, when the second area 23 is a closed area, the gas in the second area 23 may be an inert gas such as nitrogen or argon. The inert gas has stable performance and can avoid reacting with the target layer 1 and the first connecting layer 21 during the evaporation coating process to ensure the coating quality. In addition, the gas in the second area 23 may also be air.

[0062] When the second area 23 is a non-enclosed area, it is connected to the ambient atmosphere, so during the evaporation coating process, the gas in the second area 23 is consistent with the ambient atmosphere during the evaporation process. Generally, the evaporation chamber is in a vacuum environment during the evaporation process. At this time, the gas in the second area 23 is the coating gas. When the second area 23 is a non-enclosed area, the atmosphere inside and outside the second area 23 is consistent, which can effectively avoid the pressure difference problem causing the target structure to be damaged during the operation.

[0063] In some embodiments, the first connection layer 21 is annular in shape. The first connection layer 21 connects the edge of the target layer 1, so that the second area 23 of the connection unit is large enough, thereby ensuring that the area with low thermal conductivity is large enough and effectively reducing the heat accumulation in the first direction. At this time, the middle area of ​​the connection unit is the second area filled with gas, which is convenient for improving the uniformity of the coating.

[0064] Furthermore, the first connection layer 21 may include a plurality of connection portions 211 distributed in an annular pattern. In this case, a non-enclosed second region may be formed, thereby effectively avoiding the target material structure from being broken due to the volume expansion of the gas in the second region 23 due to heating during the evaporation process.

[0065] In some embodiments, the first connecting layer 21 may be provided with at least one through hole penetrating the first connecting layer 21 along the first direction, or the first connecting layer 21 may be provided with at least one through hole penetrating the first connecting layer 21 along the second direction to form a non-enclosed second area, thereby reducing the risk of target material structure fragmentation.

[0066] See also Fig. 9 In some embodiments, the connection unit 2 includes a first region 22 and a second region 23, a first connection layer 21 is provided in the first region 22, and when the orthographic projection area of ​​the first connection layer 21 is smaller than the orthographic projection area of ​​the target layer 1 on the projection plane perpendicular to the first direction, multiple first connection layers 21 between adjacent target layers 1 can be provided. The material density of the multiple first connection layers 21 is gradually distributed from the middle to both sides, thereby increasing the design flexibility and meeting different types of design requirements while ensuring the thermal isolation and connection performance of the first connection layer 21.

[0067] See also Figures 10 to 13 In some embodiments, each target layer 1 includes at least two sub-target portions 11 of the same material. Adjacent sub-target portions 11 are spliced ​​along the first direction, and a second connecting layer (not shown) is provided between adjacent sub-target portions 11. The material of the second connecting layer is the same as that of the sub-target portion 11.

[0068] By arranging the target material layer 1 to be spliced ​​together by sub-target material parts 11 in the first direction, and arranging a second connecting layer between adjacent sub-target material parts 11, the structure spliced ​​in the first direction can effectively alleviate the problem of cracking of the target material layer 1 caused by thermal stress during the evaporation coating process.

[0069] Exemplarily, the material density of the second connecting layer is the same as that of the target material layer 1. By setting the material density of the second connecting layer to be the same as that of the target material layer 1, the consistency of density in the first direction ensures the uniformity and quality of the coating.

[0070] When the target layer 1 is composed of multiple sub-target portions 11 spliced ​​along the first direction, the specific number and shape of the sub-target portions 11 can be selected according to actual conditions while satisfying the performance of the target layer 1. For example, the shape of the sub-target portion 11 can be triangular, multi-curved, stepped or other suitable shapes to meet different design and coating requirements.

[0071] See also Figures 14 to 17 In other embodiments, each target layer 1 includes at least two sub-target portions 11 of the same material, and adjacent sub-target portions 11 are spliced ​​along a second direction perpendicular to the first direction. A third connecting layer (not shown) is provided between adjacent sub-target portions 11. The material of the third connecting layer is the same as that of the sub-target portion 11.

[0072] By arranging the target material layer 1 to be formed by sub-target material parts 11 being spliced ​​in the second direction, and a third connecting layer being arranged between adjacent sub-target material parts 11, the tightness of the splicing of the target material layer 1 in the second direction is ensured. The structure spliced ​​in the second direction can also effectively alleviate the problem of cracking of the target material layer 1 caused by thermal stress during the evaporation coating process.

[0073] When the target layer 1 is composed of multiple sub-target portions 11 spliced ​​along the second direction, the specific number and shape of the sub-target portions 11 can be selected according to actual conditions while satisfying the performance of the target layer 1. When the sub-target portion 11 is fan-shaped, the target layer 1 can be composed of two fan-shaped sub-target portions 11 with a central angle of 180 degrees, or three fan-shaped sub-target portions 11 with a central angle of 120 degrees, or four fan-shaped sub-target portions 11 with a central angle of 90 degrees, thereby being able to meet different design and coating requirements.

[0074] Exemplarily, the material density of the third connecting layer is the same as that of the first connecting layer 21. By setting the material density of the third connecting layer to be the same as that of the target material layer 1, the consistency of density in the second direction ensures the uniformity and quality of the coating.

[0075] In some embodiments, each target material layer 1 in the plurality of target material layers 1 has the same configuration. It should be noted that the same configuration here means that the plurality of target material layers 1 are all integrated structures, and each target material layer 1 has the same shape; or each target material layer 1 is spliced ​​by sub-target material parts 11, and the number, shape and splicing method of the sub-target material parts 11 in each target material layer 1 are the same, that is, the structural composition of the target material layers 1 is the same, and by setting the configuration of each target material layer 1 to be the same, the uniformity of the coating is ensured.

[0076] In other embodiments, at least two target material layers 1 in the plurality of target material layers 1 have different configurations. It should be noted that the different configurations here refer to that the target material layers 1 may all be integrated structures, then at least two target material layers 1 have different shapes; or the target material layer 1 is composed of a plurality of sub-target material parts 11 spliced ​​together, then the number, shape and splicing method of the sub-target material parts in at least two target material layers 1 are different; or the target material layer 1 has both an integrated structure configuration and a configuration composed of a plurality of sub-target material parts 11 spliced ​​together, that is, at least two target material layers 1 have different composition structures. By setting the target material layers 1 to have different configurations, greater design flexibility is provided, and the configuration and arrangement of the target material layers 1 can be adjusted according to specific application requirements, thereby achieving higher film quality and performance.

[0077] In some embodiments, the thickness of the connecting unit 2 is no more than one tenth of the thickness of the target material layer 1. By controlling the thickness of the connecting unit 2 to be no more than one tenth of the thickness of the target material layer 1, the heat transfer is optimized while avoiding the influence of the connecting unit 2 on the film quality when used as an evaporation coating material, and reducing the production cost. By regulating the thickness of the connecting unit 2, the thermal conductivity performance can be further optimized. In particular, while meeting the structural performance of the target material, the specific thickness of the first connecting layer 21 can be selected according to actual conditions and is not limited here.

[0078] The target material structure in the embodiment of the present application includes a multi-layer target material layer 1 and the multi-layer target material layer 1 is stacked. A connecting unit 2 is provided between two adjacent target material layers 1, and the thermal conductivity of the connecting unit 2 is less than that of the target material layer 1. Therefore, the continuous accumulation of heat in the first direction can be effectively reduced, so that the heat conduction of the target material structure in the first direction can be optimized, and the influence of heat accumulation on the quality of the target material structure of the lower layer is avoided, thereby improving the evaporation performance of the target material structure and the final film-forming quality. At the same time, in the top-down evaporation coating process, the heat acting on the same target material layer 1 can be better conducted in the second direction, so that the coating condition of the target material structure during the heating evaporation process is better.

[0079] In the description of this specification, the description with reference to the terms "some embodiments", "other embodiments", "ideal embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.

[0080] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features of the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0081] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A target material structure, characterized in that: include: At least two target material layers are stacked along a first direction and are made of the same material; A connecting unit is located between two adjacent target material layers, the connecting unit connects the adjacent target material layers in a first direction, the connecting unit includes a first connecting layer, the material of the first connecting layer is the same as the material of the target material layer, and the first connecting layer is located in at least a portion of the connecting unit, and the thermal conductivity of the connecting unit is less than the thermal conductivity of the target material layer.

2. The target structure according to claim 1, characterized in that: The material density of the first connecting layer is less than the material density of the target material layer.

3. The target structure according to claim 2, characterized in that: On a projection plane perpendicular to the first direction, the orthographic projection of the first connection layer overlaps with the orthographic projection of the target material layer.

4. The target structure according to claim 1, characterized in that: The connecting unit includes a first region and a second region, the first region is provided with the first connecting layer, on a projection plane perpendicular to the first direction, the orthographic projection area of ​​the first connecting layer is smaller than the orthographic projection area of ​​the target material layer, and the thermal conductivity of the second region is smaller than the thermal conductivity of the target material layer.

5. The target structure according to claim 4, characterized in that: The first connection layer is in a ring shape, and the first connection layer is connected to the edge of the target material layer.

6. The target structure according to claim 5, characterized in that: The first connection layer includes a plurality of connection parts distributed in an annular shape and at intervals.

7. The target structure according to claim 1, characterized in that: Each of the target layers includes at least two sub-target portions of the same material. Adjacent sub-target portions are spliced ​​along the first direction, and a second connecting layer is provided between adjacent sub-target portions. The material of the second connecting layer is the same as that of the sub-target portions.

8. The target structure according to claim 1, characterized in that: Each of the target material layers includes at least two sub-target material portions of the same material, adjacent sub-target material portions are spliced ​​along a second direction perpendicular to the first direction, and a third connecting layer is arranged between adjacent sub-target material portions, and the material of the third connecting layer is the same as that of the sub-target material portion.

9. The target structure according to claim 1, characterized in that: The thickness of the connecting unit is no more than one tenth of the thickness of the target material layer.

10. The target structure according to claim 1, characterized in that: The shape of the target layer includes a columnar, rectangular or non-planar special-shaped structure.

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