Thin film deposition apparatus and thin film deposition method

Abstract

The invention discloses a thin film deposition device which is characterized in that after one-time thin film deposition is finished, a rotating mechanism drives a heating tray to drive a substrate to rotate from a first position to a second position, after rotation is finished, the heating tray is separated from the substrate, the substrate is supported by a supporting ring, and the rotating mechanism drives the heating tray to rotate to a third position; and the supporting ring and the substrate are kept at the second position, and next thin film deposition is carried out after the heating tray makes contact with the substrate. According to the method, non-uniformity of the thickness of the thin film deposited on the substrate is compensated, uniformity and stability of deposition of the thin film of the PECVD layer stack structure are achieved, the phenomenon that etching through holes of the thin film deposited on the substrate deviate from the vertical direction in the subsequent etching process is avoided, and therefore the stability of the performance of a semiconductor device is further guaranteed.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a thin film deposition device and a thin film deposition method. Background Art

[0002] In a vacuum processing chamber of plasma enhanced chemical vapor deposition (PECVD), a layer stack structure of different materials is deposited on a substrate. The substrate is placed in a vacuum processing chamber, and a first processing gas is first introduced to form a first layer of a first material on the substrate; then plasma cleaning and gas cleaning are performed, and then a second processing gas is introduced to form a second layer of a second material on the substrate. The above plasma cleaning and gas cleaning are repeated, and the first material and the second material are stacked and deposited on the substrate to form a thin film of a layer stack structure. Three-dimensional (3D) storage can be made of a layer stack structure of alternating thin film materials deposited on a substrate.

[0003] Currently, 3D storage uses alternating layers of oxide and nitride films to store data in a three-dimensional structure through related processes. These stacked structures may include multiple layers of the first material and the second material, such as a continuous stack of more than 300 layers or even 500 layers.

[0004] Specifically, in some cases, the stack structure of the first material and the second material in the thin film material of the 3D storage stack can be oxide and silicon, silicon and doped silicon, or silicon and nitride. Accordingly, the thin film materials of the 3D storage stack of these material combinations can mostly be applied to BiCS (Bit-Cost Scalable), TCAT (Terabit Cell Array Transistor) or other 3D storage structures. In addition, the stack structure of the first material and the second material can also be other material combinations, and the order in which the first material and the second material layers are deposited on the substrate can also be reversed.

[0005] However, the existing PECVD equipment has the following problems:

[0006] 1. As the number of stacked layers on the surface of the substrate increases, the thickness of the film increases accordingly, which directly leads to the deterioration of the uniformity between the layers of the film and the uniformity of the total film after stacking, which in turn makes it impossible to obtain a vertical structure in the subsequent etching process, thereby limiting the continuous increase in the number of film layers during the film stacking process.

[0007] Under current equipment conditions, when the deposited film exceeds 200 layers, the uniformity and quality of the film will degrade. During the continuous stacking of different types of films, the deviation of the fixed position will continue to be amplified, causing the uniformity of the substrate film to deviate from the controllable range, making it impossible for the subsequent etching process to achieve the accuracy of through-hole etching, resulting in the etched through-hole deviating from the vertical direction during the etching process, which further leads to the failure of the semiconductor device.

[0008] 2. The deformation caused by long-term use of the gas shower head or the extraction of exhaust gas by the external air pump leads to uneven distribution of process gas supplied by the gas supply component, resulting in deviation of film thickness during film deposition, which in turn causes the etched through hole to deviate from the vertical direction during the etching process, further leading to failure of the semiconductor device.

[0009] 3. When depositing thin films using the traditional PECVD method, the heating tray needs to be fixed to ensure the flatness of the heating tray. However, when the heating tray is fixed, the temperature distribution of the substrate will form a fixed pattern, resulting in uneven heating of the substrate, which in turn causes the etched through holes to deviate from the vertical direction during the etching process, further leading to the failure of the semiconductor device.

[0010] In summary, it is necessary to propose a new thin film deposition device and method to solve the above problems. Summary of the invention

[0011] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a thin film deposition device and a thin film deposition method, so as to solve the problem of poor uniformity of thin film deposition on a substrate in the prior art.

[0012] To achieve the above-mentioned object and other related objects, the present invention provides a thin film deposition device, comprising:

[0013] a processing chamber for performing thin film deposition;

[0014] A heating tray, used for carrying and heating the substrate, wherein the heating tray is configured as a substrate supporting portion with a middle protrusion and an edge portion for placing a supporting ring;

[0015] A supporting mechanism, comprising a supporting ring disposed around the substrate supporting portion and a supporting shaft for supporting the supporting ring;

[0016] A lifting mechanism, used for driving the support shaft to lift and / or driving the heating tray to lift and / or

[0017] A rotating mechanism, used for driving the heating tray to rotate;

[0018] The thin film deposition device is configured as follows: after a thin film deposition is completed, the rotating mechanism drives the heating tray to rotate the substrate from a first position to a second position; after the rotation is completed, the heating tray is separated from the substrate, and the substrate is supported by the support ring; the rotating mechanism drives the heating tray to rotate to a third position, while the support ring and the substrate remain in the second position; the next thin film deposition is performed after the heating tray contacts the substrate.

[0019] Preferably, the third position is the same as the first position.

[0020] Preferably, the inner diameter of the support ring is larger than the outer diameter of the substrate supporting portion.

[0021] Preferably, the support shaft is non-fixedly connected to the support ring.

[0022] Preferably, a surface height difference between the substrate supporting portion and the edge portion is the same as a thickness of the supporting ring.

[0023] Preferably, the support ring has a thickness of 0.3-0.7 mm.

[0024] Preferably, the support ring is fixedly connected to the support shaft.

[0025] Preferably, a surface height difference between the substrate supporting portion and the edge portion is 1.5-2.9 mm.

[0026] Preferably, the support ring has a thickness of 0.3-0.7 mm.

[0027] Preferably, when the rotating mechanism drives the heating tray to rotate together with the substrate, the supporting ring is kept in a non-contact state with the heating tray and the substrate.

[0028] The present invention also provides a thin film deposition method, comprising:

[0029] Placing a substrate in a processing chamber and depositing a thin film of a first thickness on the substrate;

[0030] The heating tray drives the substrate to rotate from the first position to the second position;

[0031] The heating tray is separated from the substrate, the support ring supports the substrate, and the heating tray rotates from the second position to the third position;

[0032] The heated tray is brought into contact with the substrate to deposit a thin film of a second thickness.

[0033] Preferably, the first position is the same as the third position.

[0034] Preferably, the heating tray is separated from the substrate by a lifting mechanism driving the heating tray downward.

[0035] Preferably, the heating tray is separated from the substrate by the lifting mechanism driving the heating tray downward and driving the supporting shaft upward.

[0036] Preferably, the heating tray is separated from the substrate by a lifting mechanism driving the supporting shaft to rise.

[0037] Preferably, the support shaft and the support ring are not fixedly connected, and the support and separation between the two are achieved through relative movement.

[0038] Preferably, when a thin film is deposited on a substrate, an upper surface of the support ring is in contact with the substrate, and a lower surface of the support ring is in contact with the heating tray.

[0039] Preferably, when the heating tray drives the substrate to rotate, the support ring and the support shaft are in a separated state, and the support ring is driven by the heating tray to rotate together.

[0040] Preferably, the support ring is fixedly connected to the support shaft, and the support ring is driven to rise and fall by the support shaft.

[0041] Preferably, after the support shaft drives the support ring to descend to a position where it is not in contact with the substrate and the heating tray, the heating tray drives the substrate to rotate, and the support ring does not rotate.

[0042] By using this invention, the problem of poor uniformity of deposited thin films when depositing ultra-multi-layers (for example, >200 layers) is solved. When the number of deposited thin films exceeds 200 layers, the uniformity and stability of thin film deposition in the PECVD layer stack structure is achieved, thereby avoiding the phenomenon that the etched through holes of the thin film deposited on the substrate deviate from the vertical direction during the subsequent etching process, thereby ensuring the stability of the performance of the semiconductor device. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] Figure 1 A schematic diagram illustrating the tilting of a high-layer thin film deposited using a PECVD thin film deposition technology.

[0044] Figure 2A and Figure 2B The schematic diagrams respectively illustrate the substrate of the thin film deposition device in Example 1 provided by the present invention before and after being lifted up.

[0045] Figure 3A and Figure 3B The top views before and after the ejector pin is rotated to a set angle in Example 1 provided by the present invention are respectively illustrated.

[0046] Figure 4A and Figure 4B The schematic diagrams respectively illustrate the substrate of the thin film deposition device in Example 5 provided by the present invention before and after being lifted up.

[0047] Figure 5 A top view of a support ring in Example 5 provided by the present invention is illustrated.

[0048] Fig. 6A and Figure 6B The schematic diagrams respectively illustrate the substrate of the thin film deposition device in Example 6 provided by the present invention before and after being lifted up.

[0049] Figure 7 The top view of the ejector pin and the support ring in Example 6 provided by the present invention is illustrated.

[0050] FIG. 8A to FIG. 8D Schematic diagrams of the substrate provided by the present invention rotating at different set angles are respectively illustrated.

[0051] Fig. 9 The schematic structural diagram of the thin film deposition device in Example 7 and Example 10 provided by the present invention is illustrated.

[0052] Fig.10 The schematic diagram of the structure of the thin film deposition device in Example 8 and Example 11 provided by the present invention is illustrated.

[0053] Fig.11 The schematic structural diagram of the thin film deposition device in Example 9 provided by the present invention is illustrated.

[0054] Fig. 12A The schematic diagram illustrates that uneven distribution of gas supplied by a gas supply assembly in the existing PECVD thin film deposition technology leads to uneven deposition of thin films.

[0055] Fig. 12B The schematic diagram illustrates the non-uniformity of the deposited film caused by the exhaust gas extracted by the gas pump in the existing PECVD thin film deposition technology.

[0056] Fig.13A The schematic diagram of the structure of the thin film deposition device in Example 12 provided by the present invention is illustrated.

[0057] FIG. 13B to FIG. 13C Schematic diagrams respectively illustrate the downward stretching and upward compression of the side walls of the gas regulating assembly in Example 12 provided by the present invention.

[0058] Fig.14A The schematic diagram of the structure of the thin film deposition device in Example 13 provided by the present invention is illustrated.

[0059] FIG. 14B to FIG. 14C Schematic diagrams of the telescopic rod being compressed upward and stretched downward in Example 13 provided by the present invention are respectively illustrated.

[0060] FIG. 15A to FIG. 15B The schematic flow charts of the thin film deposition method in Example 14 provided by the present invention are respectively illustrated.

[0061] Fig.16 The schematic flow chart of the thin film deposition method in Example 18 provided by the present invention is illustrated.

[0062] Fig.17 The schematic flow chart of the thin film deposition method in Example 19 provided by the present invention is illustrated.

[0063] Fig.18 The schematic flow chart of the thin film deposition method in Example 20 provided by the present invention is illustrated.

[0064] Fig.19 The schematic flow chart of the thin film deposition method in Example 21 provided by the present invention is illustrated.

[0065] FIG. 20A to FIG. 20K The schematic diagrams of the arrangement of the thin film deposition equipment in Example 22 and Example 23 provided by the present invention are respectively illustrated.

[0066] Fig.21 The schematic diagram of the structure of the thin film deposition device in Example 25 provided by the present invention is illustrated.

[0067] Figure 22-23 The schematic diagram of the structure of the thin film deposition device in Example 26 provided by the present invention is illustrated.

[0068] Figure 24-25 The schematic diagram of the structure of the thin film deposition device in Example 27 provided by the present invention is illustrated.

[0069] Figure 26-27 The schematic diagram of the structure of the thin film deposition device in Example 28 provided by the present invention is illustrated.

[0070] Figure 28-29 The schematic diagram of the structure of the thin film deposition device in Example 29 provided by the present invention is illustrated.

[0071] Figure 30-31 The schematic diagram of the structure of the thin film deposition device in Example 30 provided by the present invention is illustrated.

[0072] Figure 32-33 The schematic diagram of the structure of the thin film deposition device in Example 31 provided by the present invention is illustrated.

[0073] Fig.34 The connection relationship between the controller and various components provided by the present invention is illustrated.

[0074] Figure 35-36 The schematic diagram of the structure of the thin film deposition device in Example 32 provided by the present invention is illustrated.

[0075] Fig.37 The schematic diagram of the structure of the arrangement of multiple groups of ejector pins in Example 33 provided by the present invention is illustrated.

[0076] Fig.38 The schematic diagram of the structure of the thin film deposition device in Example 34 provided by the present invention is illustrated.

[0077] Fig.39 Example Fig.38 A partial enlarged view of area A.

[0078] Figures 40A-40D The process flow charts of the thin film deposition device in Example 34 provided by the present invention are respectively illustrated;

[0079] Fig.41 The schematic diagram of the structure of the thin film deposition device in Example 35 provided by the present invention is illustrated.

[0080] Fig.42 Example Fig.41 A partial enlarged view of area B.

[0081] Figures 43A-43D The process flow charts of the thin film deposition device in Example 35 provided by the present invention are respectively illustrated; DETAILED DESCRIPTION

[0082] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0083] It should be understood that when a component is referred to as being “on another component,” “connected to another component,” “coupled to another component,” or “contacting another component,” it can be directly on, connected to, coupled to, or contacting the other component, or intervening components may be present. In contrast, when a component is referred to as being “directly on another component,” “directly connected to,” “directly coupled to,” or “directly contacting” another component, there are no intervening components present.

[0084] See also Figures 1 to 37 It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner. Although the illustrations only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation, the form, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the component layout may also be more complicated.

[0085] Embodiment 1

[0086] During the PECVD thin film deposition process, the uniformity of the thin film deposition process deteriorates due to uneven temperature distribution on the heating tray or different flatness of the substrate on the heating tray due to stress. When thin films of different materials are alternately deposited on a substrate, as the number of layers of the first material and the second material alternately stacked on the substrate w increases, the thickness of the thin film of the layer stack structure formed on the substrate w increases, such as Figure 1 As shown in , the stacked film is tilted at a certain angle Δ. That is, as the number of layers in the stacked structure increases, the uniformity of the stacked film deteriorates, causing the uniformity of the film on the substrate w to deviate from the controllable range, making it impossible for the subsequent etching process to achieve the accuracy of through-hole etching, resulting in the etched through-hole deviating from the vertical direction during the etching process, which further causes the failure of the semiconductor device.

[0087] In order to solve the above problems, this embodiment 1 provides a thin film deposition device. Specifically, see Figure 2A , Figure 2B and Fig.34 As shown, the thin film deposition device includes: a processing chamber 1 for thin film deposition; a gas supply assembly 2, which is arranged on the top wall of the processing chamber 1 and is used to supply process gas to the inside of the processing chamber 1; a heating tray 3, which is arranged below the gas supply assembly 2 and is used to carry and heat the substrate w; a radio frequency source 5, which is used to provide radio frequency power, form a radio frequency electric field inside the processing chamber 1, excite the process gas inside the processing chamber 1 to dissociate into plasma gas, and the dissociated plasma gas is deposited on the substrate w for thin film; a rotating mechanism 403, which controls the rotation of the substrate w, and the rotating axis AA' of the rotation is vertical and passes through the substrate w; a controller, which is respectively connected to the gas supply assembly 2, the radio frequency source 5, the heating tray 3, and the rotating mechanism 403, and is used to control the gas supply assembly 2, the radio frequency source 5, the heating tray 3, and the rotating mechanism 403 to work. The controller is also configured to construct a program menu, and the program menu includes keeping the radio frequency source 5 in an on state when the substrate w rotates. In this embodiment 1, the rotating axis AA' of the rotation passes through the center O of the substrate w, so that the substrate w rotates around the rotating axis AA'.

[0088] When the rotating mechanism 403 drives the substrate w to rotate, the process gas is stopped from being introduced into the processing chamber 1, and an inert gas or nitrogen is introduced into the processing chamber 1 to maintain the pressure in the processing chamber 1, and the RF source 5 is kept turned on. Because after a certain number of thin films are deposited on the substrate w, some impurity particles are suspended in the processing chamber 1. At this time, the RF source 5 is kept turned on, and the processing chamber 1 is filled with a radio frequency electric field. The impurity particles are charged under the action of the radio frequency electric field in the processing chamber 1. The charged impurity particles remain suspended and will not fall on the surface of the substrate w, which effectively prevents the impurity particles from falling on the thin film deposited on the substrate w, and avoids contamination of the thin film deposited on the substrate w.

[0089] Therefore, this embodiment 1 proposes to drive the substrate w to rotate while keeping the RF source 5 turned on, thereby compensating for the uneven thickness of the film deposited on the substrate w, achieving the uniformity and stability of the thin film deposition of the PECVD layer stack structure, and avoiding the phenomenon that the etched through holes of the thin film deposited on the substrate w deviate from the vertical direction during the subsequent etching process, thereby further ensuring the stability of the performance of the semiconductor device.

[0090] Among them, Figure 2A and Figure 2B As shown, the thin film deposition device further includes: a support member for supporting the substrate w; and a lifting mechanism 402 connected to the support member for driving the support member to rise or fall in a vertical direction to lift the substrate w off the heating tray 3 or place the substrate w on the heating tray 3. The lifting mechanism 402 is connected to a controller, and the controller controls the lifting mechanism 402 to work.

[0091] In the present embodiment 1, the rotating mechanism 403 is disposed at the bottom end of the lifting mechanism 402, and is used to drive the supporting member and the lifting mechanism 402 to rotate synchronously along the horizontal circumferential direction, so as to drive the substrate w to rotate.

[0092] In the present embodiment 1, the support member is a pin 401 that can move in the vertical direction and in the horizontal circumferential direction, and a first through hole 301 is formed on the heating tray 3, and the pin 401 is disposed in the first through hole 301. Figure 3A and Figure 3B As shown, the cross section of the first through hole 301 in the horizontal plane is arc-shaped or circular, and the center M of the arc or circle is on a vertical line with the center O of the substrate w.

[0093] In this embodiment 1, the lifting mechanism 402 can be a cylinder 402, which is connected to the bottom of the ejector 401; the rotating mechanism 403 can be a motor 403, which is connected to the bottom of the cylinder 402. The cylinder 402 drives the ejector 401 to rise or fall, and the motor 403 drives the cylinder 402 and the ejector 401 to rotate synchronously.

[0094] When the substrate w needs to be rotated, Figure 2B As shown, the lifting mechanism 402 drives the ejector pin 401 to rise vertically and extend from the first through hole 301, and the ejector pin 401 lifts the substrate w to separate the substrate w from the heating tray 3; then the rotating mechanism 403 drives the ejector pin 401 to move along an arc track in the first through hole 301, so that the substrate w rotates a set angle, as shown in FIG. Figure 3A and Figure 3B As shown; after the substrate w rotates to a set angle, the substrate w stops rotating, and the lifting mechanism 402 drives the ejector pin 401 to move downward in the vertical direction, placing the substrate w on the heating tray 3 for subsequent thin film deposition.

[0095] There can be at least three ejector pins 401, and accordingly, there can be at least three first through holes 301, which correspond one to one with the ejector pins 401. Figure 3A and Figure 3B As shown, there are three ejector pins 401 and correspondingly there are three first through holes 301 , and the cross-sections of the three first through holes 301 in the horizontal plane are three arcs.

[0096] In this embodiment 1, at least three ejector pins 401 are used to lift the substrate w to rotate the substrate w to a set angle, thereby compensating for the uneven thickness of the thin film deposited on the substrate w, achieving the uniformity and stability of the thin film deposition of the PECVD layer stack structure, and avoiding the phenomenon that the etched through holes of the thin film deposited on the substrate w deviate from the vertical direction during the subsequent etching process, thereby further ensuring the stability of the performance of the semiconductor device.

[0097] A door 101 is provided on the side wall of the processing chamber 1 , which is used for a robot to enter the processing chamber 1 before and after the thin film deposition process is performed on the substrate w to place or remove the substrate w from the heating tray 3 .

[0098] After the film deposition is completed, (number of rotations of substrate w + 1) * the set angle of each rotation of substrate w = 360°. FIG. 8A to FIG. 8D As shown, after the thin film deposition is completed, the substrate w rotates 5 times, and the set angle for each rotation is 60 degrees; it can also be that the substrate w rotates 3 times, and the set angle for each rotation is 90 degrees; it can also be that the substrate w rotates 2 times, and the set angle for each rotation is 120 degrees; the substrate w rotates 1 time, and the set angle for each rotation is 180 degrees.

[0099] Among them, the deposition rate of the thin film on the substrate w is related to the multiple of the RF power of the RF source 5; the high frequency of the RF source 5 is an integer multiple n of 13.56 MHz, and n satisfies: n=1,2,3,…,8; the low frequency range of the RF source 5 is 20KHz-400KHz.

[0100] However, during the rotation of the substrate w, the RF source 5 is kept turned on. After the substrate w is separated from the heating tray 3, the gap between the back of the substrate w and the heating tray 3 is too large, which may easily lead to arc discharge. Therefore, in this embodiment 1, in order to avoid arc discharge when the substrate w is separated from the heating tray 3 when the RF source 5 is turned on, Figure 2A and Figure 2BAs shown, it is necessary to adjust the gap between the substrate w and the heating tray 3 to be smaller than the set value to prevent the substrate w from detaching from the heating tray 3 in the atmosphere of plasma gas, resulting in arc discharge. In this embodiment 1, the set value of the gap between the substrate w and the heating tray 3 is m, 0<m≤5mm. Therefore, under the condition that the gap between the substrate w and the heating tray 3 is smaller than the set value, the RF source 5 is kept turned on to reduce the risk of arc discharge on the substrate w, thereby ensuring the safety and stability of the thin film deposition process.

[0101] Embodiment 2

[0102] This embodiment 2 provides a thin film deposition device, which is different from the embodiment 1 in that:

[0103] like Figure 2A and Figure 2B As shown, the heating tray 3 is provided with a second through hole 302. During the rotation of the substrate w, the RF source 5 is kept turned on, and a non-process gas is introduced into the gap between the substrate w and the heating tray 3 through the second through hole 302 to reduce the risk of arc discharge when the substrate w is separated from the heating tray 3. In this embodiment 2, the non-process gas is an inert gas or nitrogen.

[0104] Because after a certain number of thin films are deposited on substrate w, some impurity particles are suspended inside processing chamber 1. At this time, RF source 5 is kept turned on, and the inside of processing chamber 1 is filled with RF electric field. Impurity particles are charged under the action of RF electric field inside processing chamber 1. Charged impurity particles remain suspended and will not fall on the surface of substrate w, effectively preventing impurity particles from falling on the thin film deposited on substrate w, and avoiding contamination of the thin film deposited on substrate w. Therefore, when the gap between substrate w and heating tray 3 is filled with non-process gas, RF source 5 is kept turned on to reduce the risk of arc discharge on substrate w, thereby ensuring the safety and stability of the thin film deposition process.

[0105] The other configurations of this embodiment are the same as those of the first embodiment and will not be described in detail here.

[0106] Embodiment 3

[0107] This embodiment 3 provides a thin film deposition device, which is different from the embodiment 1 in that:

[0108] During the rotation of the substrate w, the RF source 5 is kept in an on state, and the RF power of the RF source 5 is adjusted to be lower than the RF power of the RF source 5 during the thin film deposition process, so as to reduce the risk of arc discharge when the substrate w is separated from the heating tray 3, thereby ensuring the safety and stability of the thin film deposition process.

[0109] The other configurations of this embodiment are the same as those of the first embodiment and will not be described in detail here.

[0110] Embodiment 4

[0111] This embodiment 4 provides a thin film deposition device, which is different from the embodiment 1 in that:

[0112] Before the substrate w is rotated, the RF source 5 is adjusted to be in a closed state, and the processing chamber 1 is purified.

[0113] After a certain number of thin films are deposited on the substrate w, there will be impurity particles inside the processing chamber 1. The dirtier the inside of the processing chamber 1 is, the easier it is for arc discharge to occur when the substrate w is separated from the heating tray 3 inside the processing chamber 1. Therefore, before the substrate w rotates, it is better to turn off the RF source 5 and supply nitrogen gas to the inside of the processing chamber 1 through the gas supply assembly 2 to purify the processing chamber 1.

[0114] The other configurations of this embodiment are the same as those of the first embodiment and will not be described in detail here.

[0115] Embodiment 5

[0116] See also FIG. 4A to FIG. 5 , this embodiment 5 provides a thin film deposition device, compared with embodiment 1, the difference is:

[0117] like Figure 4A and Figure 4B As shown, the support member is a support ring 404 disposed at the bottom edge of the substrate w. The support ring 404 can be lifted and lowered in the vertical direction and rotated with the center line AA' of the substrate w as the rotation axis.

[0118] In this embodiment 5, Figure 5 As shown, the support ring 404 is a circular ring with a notch a, or the support ring 404 includes multiple arcs located on the same circle. Accordingly, a door 101 is provided on the side wall of the processing chamber 1, which is used for the robot to enter the processing chamber 1 before and after the thin film deposition process of the substrate w, and place the substrate w on the support ring 404 or remove the substrate w from the support ring 404.

[0119] like Figure 4A and Figure 4B As shown, when the substrate w needs to be rotated, the lifting mechanism 402 drives the support ring 404 to rise upward in the vertical direction, lifts the substrate w, and separates the substrate w from the heating tray 3; then the rotating mechanism 403 drives the support ring 404 to rotate to drive the substrate w to rotate a set angle; after the substrate w rotates the set angle, it stops rotating, and the lifting mechanism 402 drives the support ring 404 to move downward in the vertical direction, placing the substrate w on the heating tray 3 for thin film deposition.

[0120] In this embodiment 5, a support ring 404 arranged at the bottom of the outer periphery of the substrate w is used to lift the substrate w to adjust the rotation setting angle of the substrate w, so as to realize the rotation of the substrate w around the rotation axis AA', compensate for the uneven thickness of the thin film deposited on the substrate w, and realize the uniformity and stability of the thin film deposition of the PECVD layer stack structure.

[0121] The other configurations of this embodiment are the same as those of the first embodiment and will not be described in detail here.

[0122] Embodiment 6

[0123] See also FIG. 6A to FIG. 7 , this embodiment 6 provides a thin film deposition device, compared with embodiment 1, the difference is:

[0124] like FIG. 6A to FIG. 7 As shown, the thin film deposition device also includes: a support member for supporting the substrate w, wherein the support member includes a pin 401 and a support ring 404; a first lifting mechanism 402 is connected to the pin 401, and is used to drive the pin 401 to rise or fall in a vertical direction, so that the robot can take the substrate w from the heating tray 3 or place the substrate w on the heating tray 3; a second lifting mechanism 405 is connected to the support ring 404, and is used to drive the support ring 404 to rise or fall in a vertical direction, so as to lift the substrate w off the heating tray 3 or place the substrate w on the heating tray 3.

[0125] In the sixth embodiment, the rotating mechanism 403 is disposed at the bottom of the second lifting mechanism 405 to drive the supporting ring 404 and the second lifting mechanism 405 to rotate synchronously with the center line AA′ of the substrate w as the rotation axis, so as to drive the substrate w to rotate.

[0126] like Fig. 6A and Figure 6B As shown, a first through hole 301 is opened on the heating tray 3 , and a pin 401 is disposed in the first through hole 301 for passing through the first through hole 301 to support the substrate w.

[0127] When the robot places the substrate w into the processing chamber 1, the first lifting mechanism 402 drives the ejector pin 401 to rise upward in the vertical direction and extend from the first through hole 301 to carry the substrate w placed by the robot; then the first lifting mechanism 402 drives the ejector pin 401 to descend downward in the vertical direction, and the ejector pin 401 retracts into the first through hole 301, so that the substrate w is placed on the heating tray 3 for subsequent thin film deposition. When the robot takes away the substrate w from the processing chamber 1, the first lifting mechanism 402 drives the ejector pin 401 to rise upward in the vertical direction and extend from the first through hole 301, and lifts the substrate w from the heating tray 3, so that the robot can take away the substrate w; then the first lifting mechanism 402 drives the ejector pin 401 to descend downward in the vertical direction, and the ejector pin 401 retracts into the first through hole 301.

[0128] When the substrate w needs to be rotated, the second lifting mechanism 405 drives the support ring 404 to rise upward in the vertical direction, lifts the substrate w, and separates the substrate w from the heating tray 3; then the rotating mechanism 403 drives the support ring 404 to rotate to drive the substrate w to rotate a set angle; after the substrate w rotates a set angle, it stops rotating, and the second lifting mechanism 405 drives the support ring 404 to move downward in the vertical direction, placing the substrate w on the heating tray 3 for thin film deposition.

[0129] The other configurations of this embodiment are the same as those of the first embodiment and will not be described in detail here.

[0130] Embodiment 7

[0131] like Fig. 9 As shown, this embodiment 7 provides a thin film deposition device. The thin film deposition device includes: a processing chamber 1, which is used for thin film deposition; a gas supply assembly 2, which is arranged on the top wall of the processing chamber 1, and is used to supply process gas to the inside of the processing chamber 1; a heating tray 3, which is arranged below the gas supply assembly 2, and is used to carry and heat the substrate w; a radio frequency source 5, which is used to provide radio frequency power, form a radio frequency electric field inside the processing chamber 1, and excite the process gas inside the processing chamber 1 to dissociate into plasma gas, and the dissociated plasma gas is used to perform thin film deposition on the substrate w; a rotating mechanism 403 is connected to the heating tray 3, and is used to drive the heating tray 3 to rotate with the axis AA' passing through the center of the substrate w as the rotation axis, thereby driving the substrate w to rotate synchronously.

[0132] When the rotating mechanism 403 drives the heating tray 3 and the substrate w to rotate, the process gas is stopped from being introduced into the processing chamber 1, and an inert gas or nitrogen is introduced into the processing chamber 1 to maintain the pressure in the processing chamber 1 and keep the RF source 5 in an on state.

[0133] In the present embodiment 7, the heating tray 3 drives the substrate w to rotate synchronously about the axis AA' passing through the center of the substrate w, including: the heating tray 3 rotates about the axis AA' in a forward direction by a set angle, and then rotates about the axis AA' in a reverse direction.

[0134] Embodiment 8

[0135] like Fig.10 As shown, this embodiment 8 provides a thin film deposition device. The thin film deposition device includes: a processing chamber 1, which is used for thin film deposition; a gas supply assembly 2, which is arranged on the top wall of the processing chamber 1, and is used to supply process gas to the inside of the processing chamber 1; a heating tray 3, which is arranged below the gas supply assembly 2, and is used to carry and heat the substrate w; a radio frequency source 5, which is used to provide radio frequency power, form a radio frequency electric field inside the processing chamber 1, and excite the process gas inside the processing chamber 1 to dissociate into plasma gas, and the dissociated plasma gas is used to perform thin film deposition on the substrate w.

[0136] The thin film deposition device also includes: a support member for supporting the substrate w, wherein the support member is a support ring 404 arranged at the bottom of the edge of the substrate w; a lifting mechanism 402, connected to the support ring 404, for driving the support ring 404 to rise or fall in a vertical direction to lift the substrate w off the heating tray 3 or place the substrate w on the heating tray 3.

[0137] In the present eighth embodiment, the rotating mechanism 403 is connected to the heating tray 3 and is used to drive the heating tray 3 to rotate with the axis AA′ passing through the center of the substrate w as the rotation axis.

[0138] When the rotating mechanism 403 drives the heating tray 3 to rotate, the process gas is stopped from being introduced into the processing chamber 1, and an inert gas or nitrogen is introduced into the processing chamber 1 to maintain the pressure in the processing chamber 1 and keep the RF source 5 in an on state.

[0139] In the present embodiment 8, the heating tray 3 rotates about the axis AA' passing through the center of the substrate w, including: the heating tray 3 rotates about the axis AA' in a forward direction by a set angle, and then rotates about the axis AA' in a reverse direction.

[0140] like Fig.10 As shown, when the heating tray 3 needs to be rotated, the lifting mechanism 402 drives the support ring 404 to rise upward in the vertical direction, lifts the substrate w, and separates the substrate w from the heating tray 3, and then the rotating mechanism 403 drives the heating tray 3 to rotate a set angle; after the heating tray 3 rotates the set angle, it stops rotating, and the lifting mechanism 402 drives the support ring 404 to move downward in the vertical direction, placing the substrate w on the heating tray 3 for thin film deposition.

[0141] Embodiment 9

[0142] like Fig.11 As shown, this embodiment 9 provides a thin film deposition device, which includes: a processing chamber 1 for thin film deposition; a gas supply assembly 2, arranged on the top wall of the processing chamber 1, for supplying process gas to the inside of the processing chamber 1; a heating tray 3, arranged below the gas supply assembly 2, for carrying and heating the substrate w; a radio frequency source 5, for providing radio frequency power to excite the process gas inside the processing chamber 1 to dissociate into plasma gas, and the plasma gas is used to deposit a thin film on the substrate w; a rotating mechanism 403 is connected to the gas supply assembly 2, and is used to drive the gas supply assembly 2 to rotate.

[0143] In the present embodiment 9, the rotating mechanism 403 may be a motor 403, which is connected to the gas supply assembly 2 to drive the gas supply assembly 2 to rotate. In the present embodiment 9, after the multiple substrates w are sequentially placed in the processing chamber 1 to complete the thin film deposition process, the rotating mechanism 403 drives the gas supply assembly 2 to rotate by a set angle.

[0144] Preferably, when the rotating mechanism 403 drives the gas supply assembly 2 to rotate, the process gas is stopped from being introduced into the processing chamber 1, and an inert gas or nitrogen is introduced into the processing chamber 1 to maintain the pressure in the processing chamber 1 and keep the RF source 5 turned on. Because after a certain number of thin films are deposited on the substrate w, some impurity particles are suspended in the processing chamber 1. At this time, the RF source 5 is kept turned on, and the processing chamber 1 is filled with an RF electric field. The impurity particles are charged under the action of the RF electric field in the processing chamber 1. The charged impurity particles remain suspended and will not fall on the surface of the substrate w, effectively preventing the impurity particles from falling on the thin film deposited on the substrate w, and avoiding contamination of the thin film deposited on the substrate w.

[0145] By rotating the gas supply assembly 2, the uniformity of the process gas supplied by the gas supply assembly 2 is improved, thereby improving the thickness uniformity of the deposited film on the substrate w, and achieving the uniformity and stability of the PECVD layer stack structure film deposition.

[0146] Embodiment 10

[0147] like Fig. 9 As shown, this embodiment 10 provides a thin film deposition device, which is different from the embodiment 7 in that:

[0148] The rotating mechanism 403 is connected to the heating tray 3 and is used to drive the heating tray 3 to rotate about the axis AA' passing through the center of the substrate w, thereby driving the substrate w to rotate synchronously. When the rotating mechanism 403 drives the heating tray 3 to drive the substrate w to rotate synchronously, the RF source 5 is adjusted to be off.

[0149] The other configurations of this embodiment are the same as those of the seventh embodiment and will not be described in detail here.

[0150] Embodiment 11

[0151] like Fig.10 As shown, this embodiment 11 provides a thin film deposition device, which is different from the embodiment 8 in that:

[0152] When the rotating mechanism 403 drives the heating tray 3 to rotate, the RF source 5 is adjusted to be in an off state.

[0153] The other configurations of this embodiment are the same as those of the eighth embodiment and will not be described again here.

[0154] Embodiment 12

[0155] In PECVD, due to the deformation caused by long-term use of the gas supply component 2, the process gas delivered into the processing chamber 1 is unevenly distributed, resulting in different gas flow rates at different positions on the substrate, which in turn causes deviations in the thickness of the film deposited by the plasma gas on the substrate, causing the etched through hole to deviate from the vertical direction during the etching process, ultimately leading to the failure of the semiconductor device.

[0156] like Fig. 12A As shown, when the process gas is introduced into the gas supply component 2, the gas flow rate at the central position of the gas supply component 2 is greater than the gas flow rate at the periphery of the gas supply component 2, resulting in that in the thin film deposition process, the thickness of the thin film deposited on the substrate w at the central position is greater than the thickness of the peripheral edge, causing the thin film stacked on the surface of the substrate w to tilt at a certain angle Δ, resulting in uneven thickness of the deposited film on the substrate w, thereby causing the defect that the etched through hole deviates from the vertical direction during the subsequent etching process.

[0157] like Fig. 12B As shown, the processing chamber 1 is connected to an air pump for extracting waste gas during the deposition process of the processing chamber 1. However, the extraction of waste gas by the air pump can easily cause the gas flow rate at the periphery of the gas supply component 2 to be greater than the gas flow rate at the central position of the gas supply component 2, thereby causing the thickness of the film deposited on the substrate w at the central position to be less than the thickness at the peripheral edge during the thin film deposition process, and also causing the thin film stacked on the surface of the substrate w to tilt at a certain angle Δ, resulting in uneven thickness of the deposited film on the substrate w, thereby causing the defect that the etched through hole deviates from the vertical direction during the subsequent etching process.

[0158] In order to solve the above-mentioned problem of uneven deposition at the periphery and center of the deposited film, please refer to FIG. 13A to FIG. 13C As shown, this embodiment 12 provides a thin film deposition device, specifically, as Fig.13AAs shown, the thin film deposition device includes: a processing chamber 1 for thin film deposition; a gas supply assembly 2, which is arranged on the top wall of the processing chamber 1 and is used to supply process gas to the inside of the processing chamber 1, and the gas supply assembly 2 has a first porous plate 21; a heating tray 3, which is located below the gas supply assembly 2 and is used to carry and heat the substrate w; a gas regulating unit 200, which is arranged inside the gas supply assembly 2, and a second porous plate 201 is provided at the bottom end of the gas regulating unit 200, and the second porous plate 201 is arranged opposite to the first porous plate 21 of the gas supply assembly 2. The gap between the second porous plate 201 and the first porous plate 21 is adjusted to adjust the gas flow direction of the process gas inside the gas supply assembly 2, so that the process gas inside the gas supply assembly 2 can be fully mixed, thereby improving the unevenness of the plasma gas distribution inside the processing chamber 1, achieving the uniformity and stability of the thin film deposition of the stacked structure on the substrate w in PECVD, and avoiding the phenomenon that the etched through hole of the thin film deposited on the substrate w deviates from the vertical direction during the subsequent etching process, thereby further ensuring the stability of the performance of the semiconductor device. In addition, the thin film deposition device also includes a controller, which is respectively connected to the gas supply component 2, the heating tray 3, and the gas regulating unit 200, and is used to control the operation of the gas supply component 2, the heating tray 3, and the gas regulating unit 200.

[0159] like Fig.13A As shown, the thin film deposition device also includes a radio frequency source 5, which is used to provide radio frequency power, form a radio frequency electric field inside the processing chamber 1, and excite the process gas inside the processing chamber 1 to dissociate into plasma gas, and the dissociated plasma gas performs thin film deposition on the substrate w. Among them, the high frequency of the radio frequency source 5 is an integer multiple n of 13.56MHz, and n satisfies: n=1,2,3,…,8; the low frequency range of the radio frequency source 5 is 20KHz-400KHz.

[0160] like FIG. 13B to FIG. 13C As shown, the side wall 202 of the gas regulating assembly 200 can be stretched or contracted in the vertical direction to adjust the gap between the second porous plate 201 and the first porous plate 21, so that the process gas inside the gas supply assembly 2 can be fully mixed, thereby improving the defect of uneven distribution of plasma gas during the thin film deposition process resulting in uneven deposition of the thin film on the surface of the substrate w.

[0161] In this embodiment 12, Fig. 13B and Fig. 13CAs shown, the side wall 202 of the gas regulating component 200 is a bellows, which can be stretched downward or contracted upward in the vertical direction, so that the second porous plate 201 at the bottom of the gas regulating component 200 is bent or arc-shaped to adjust the gap between the second porous plate 201 and the first porous plate 21, so that the process gas inside the gas supply component 2 can be fully mixed, thereby improving the defect of uneven deposition of thin film on the surface of the substrate w due to uneven distribution of plasma gas.

[0162] Embodiment 13

[0163] See also FIG. 14A to FIG. 14C , this embodiment 13 provides a thin film deposition device, compared with embodiment 12, the difference is:

[0164] The gas regulating assembly 200 includes a telescopic rod 203, and the telescopic rod 203 is connected to the second porous plate 201. The telescopic rod 203 can be stretched or contracted in the vertical direction so that the second porous plate 201 is bent or arc-shaped to adjust the gap between the second porous plate 201 and the first porous plate 21, so that the process gas inside the gas supply assembly 2 can be fully mixed, thereby improving the defect of uneven deposition of thin film on the surface of the substrate w caused by uneven distribution of plasma gas inside the processing chamber 1.

[0165] In this embodiment 13, Fig.14A As shown, the telescopic rod 203 is disposed at the central position inside the gas regulating unit 200 and is connected to the center of the second porous plate 201 .

[0166] The other configurations of this embodiment are the same as those of the twelfth embodiment and will not be described in detail here.

[0167] Embodiment 14

[0168] In order to solve the problem of uneven film deposition on the surface of substrate w in the prior art, please refer to Figures 2A to 10 and Fig.15A , this embodiment 14 provides a thin film deposition method, which is implemented based on the thin film deposition device in the above-mentioned embodiments 1-8 and embodiments 10-11.

[0169] Specifically, the thin film deposition method comprises the following steps:

[0170] Step S1, placing the substrate w in the processing chamber 1 of the PECVD, and evacuating the processing chamber 1 so that the substrate w on which the thin film is to be deposited is in a vacuum environment;

[0171] Step S2, introducing process gas into the processing chamber 1, and turning on the radio frequency source 5, so as to dissociate the process gas in the processing chamber 1 into plasma gas, and deposit a certain number of thin films on the substrate w;

[0172] Step S3, stopping the introduction of process gas into the processing chamber 1, and introducing non-process gas, such as inert gas or nitrogen, into the processing chamber 1 to maintain the pressure inside the processing chamber 1;

[0173] Step S4, keeping the RF source 5 turned on, rotating the substrate w or rotating the heating tray 3 or rotating the substrate w and the heating tray 3 synchronously by a set angle;

[0174] Step S5, introducing process gas into the processing chamber 1 again, and then depositing a certain number of thin films on the substrate w;

[0175] Step S6, stopping the introduction of process gas into the processing chamber 1, and introducing non-process gas, such as inert gas or nitrogen, into the processing chamber 1 to maintain the pressure inside the processing chamber 1;

[0176] Step S7, determining whether the number of layers of the thin film deposited on the substrate w meets the set number of layers; if not, repeating the above steps S2-S6; if satisfied, executing step S8;

[0177] In step S8, the substrate w is taken out from the PECVD processing chamber 1 to complete the thin film deposition process of the substrate w.

[0178] The rotation axis AA′ on which the substrate w rotates or the heating tray 3 rotates or the substrate w and the heating tray 3 rotate synchronously is vertical and passes through the center O of the substrate w.

[0179] The thin film deposited on the substrate w includes a first material and a second material deposited alternately. In this embodiment 14, the first material is silicon oxide, and the second material is silicon nitride.

[0180] The thin film deposition method further includes: after each material is deposited on the surface of the substrate w, it is necessary to evacuate the waste gas in the processing chamber 1 before performing subsequent process steps.

[0181] When the substrate w is rotated or the heating tray 3 is rotated or the substrate w and the heating tray 3 are rotated synchronously, the process gas is stopped, and an inert gas or nitrogen is introduced to maintain the pressure in the processing chamber 1 and keep the RF source 5 turned on. Because after a certain number of thin films are deposited on the substrate w, some impurity particles are suspended inside the processing chamber 1. At this time, the RF source 5 is kept turned on, and the processing chamber 1 is filled with a radio frequency electric field. The impurity particles are charged under the action of the radio frequency electric field inside the processing chamber 1. The charged impurity particles remain suspended and will not fall on the surface of the substrate w, effectively preventing the impurity particles from falling on the thin film deposited on the substrate w, and avoiding contamination of the thin film deposited on the substrate w.

[0182] After the film deposition is completed, (number of rotations of substrate w + 1) * the set angle of each rotation of substrate w = 360°. FIG. 8A to FIG. 8D As shown, after the thin film deposition is completed, the substrate w rotates 5 times, and the set angle for each rotation is 60 degrees; it can also be that the substrate w rotates 3 times, and the set angle for each rotation is 90 degrees; it can also be that the substrate w rotates 2 times, and the set angle for each rotation is 120 degrees; it can also be that the substrate w rotates 1 time, and the set angle for each rotation is 180 degrees.

[0183] However, when the substrate w rotates or the heating tray 3 rotates, the RF source 5 is kept in an on state. After the substrate w is separated from the heating tray 3, the gap between the back of the substrate w and the heating tray 3 is too large, which can easily cause arc discharge. Therefore, in this embodiment 14, in order to avoid arc discharge when the substrate w is separated from the heating tray 3 when the RF source 5 is turned on, it is necessary to adjust the gap between the substrate w and the heating tray 3 to be smaller than a set value, so as to avoid the substrate w from being separated from the heating tray 3 in the atmosphere of plasma gas, resulting in arc discharge. In this embodiment 14, the set value of the gap between the substrate w and the heating tray 3 is m, 0<m≤5mm. Therefore, under the condition that the gap between the substrate w and the heating tray 3 is less than the set value, the RF source 5 is kept in an on state, which reduces the risk of arc discharge in the substrate w and ensures the safety and stability of the thin film deposition process.

[0184] In this embodiment 14, when the number of layers of thin films deposited on the surface of the substrate w is small (for example, less than 150 layers), the heating tray 3 can be driven to drive the substrate w to rotate synchronously to avoid arc discharge caused by the substrate w being lifted up. In the case that the surface of the heating tray 3 is uneven, the substrate w can be lifted up, the substrate w can be driven to rotate, or the heating tray 3 can be driven to rotate to solve the influence of the uneven temperature of the heating tray 3 on the uniformity of the thin film deposited on the surface of the substrate w.

[0185] Alternatively, when depositing a thin film of a single material, such as Fig. 15B As shown,

[0186] Specifically, the thin film deposition method comprises the following steps:

[0187] Step S11, placing the substrate in a processing chamber and evacuating the processing chamber;

[0188] Step S12, introducing process gas, turning on the radio frequency source, and depositing a film of a certain thickness on the substrate;

[0189] Step S13, continue to introduce process gas, keep the RF source on, and rotate the substrate or the heating tray or the substrate and the heating tray synchronously rotate at a set angle;

[0190] Step S14, continuing to deposit a thin film on the substrate;

[0191] Step S15, determining whether the thickness of the deposited film on the substrate meets the set requirements. If not, repeat the above steps S12-S14; if satisfied, execute step S16;

[0192] Step S16, taking out the substrate from the processing chamber.

[0193] During the thin film growth process, the substrate w is rotated to ensure that the thin film is deposited more evenly on the surface of the substrate w.

[0194] Embodiment 15

[0195] This embodiment 15 provides a thin film deposition method, which is different from embodiment 14 in that:

[0196] When the RF source 5 is turned on, a non-process gas is introduced into the gap between the substrate w and the heating tray 3 through the second through hole 302 on the heating tray 3 to reduce the risk of arc discharge when the substrate w is separated from the heating tray 3. In this embodiment 15, the non-process gas is an inert gas or nitrogen.

[0197] When the gap between the substrate w and the heating tray 3 is filled with non-process gas, the RF source 5 is kept turned on to reduce the risk of arc discharge on the substrate w, thereby ensuring the safety and stability of the thin film deposition process.

[0198] The other configurations of this embodiment are the same as those of the fourteenth embodiment and will not be described again here.

[0199] Embodiment 16

[0200] This embodiment 16 provides a thin film deposition method, which is different from embodiment 14 in that:

[0201] Keep the RF source 5 in an on state, and lower the RF power of the RF source 5 to be lower than the RF power of the RF source 5 during the thin film deposition process to reduce the risk of arc discharge when the substrate w is separated from the heating tray 3, thereby ensuring the safety and stability of the thin film deposition process.

[0202] The other configurations of this embodiment are the same as those of the fourteenth embodiment and will not be described again here.

[0203] Embodiment 17

[0204] This embodiment 17 provides a thin film deposition method, which is different from embodiment 14 in that:

[0205] Before the substrate w rotates or the heating tray 3 rotates or the substrate w and the heating tray 3 rotate synchronously, the RF source 5 is adjusted to be in a closed state, and the processing chamber 1 is purified.

[0206] After a certain number of thin films are deposited on the substrate w, there will be impurity particles inside the processing chamber 1. The dirtier the processing chamber 1 is, the easier it is for arc discharge to occur when the substrate w is separated from the heating tray 3 inside the processing chamber 1. Therefore, before the substrate w rotates or the heating tray 3 rotates or the substrate w and the heating tray 3 rotate synchronously, it is better to turn off the RF source 5, supply nitrogen to the processing chamber 1 through the gas supply component 2, and purify the processing chamber 1. After the purification process is completed, the RF source 5 is readjusted to the open state.

[0207] The other configurations of this embodiment are the same as those of the fourteenth embodiment and will not be described again here.

[0208] Embodiment 18

[0209] See also FIG. 8A to FIG. 9 and Fig.16 , this embodiment 18 provides a thin film deposition method, which is implemented based on the thin film deposition device in the above-mentioned embodiment 7 and embodiment 10.

[0210] Specifically, the thin film deposition method comprises the following steps:

[0211] Step S21, placing the substrate w in the PECVD processing chamber 1, and evacuating the processing chamber 1 so that the substrate w on which the thin film is to be deposited is in a vacuum environment;

[0212] Step S22, introducing process gas into the processing chamber 1, and turning on the radio frequency source 5, so as to dissociate the process gas in the processing chamber 1 into plasma gas, and deposit a certain number of thin films on the substrate w;

[0213] Step S23, stop introducing the process gas into the processing chamber 1, and introduce an inert gas or nitrogen into the processing chamber 1 to maintain the pressure inside the processing chamber 1;

[0214] Step S24, adjusting the RF source 5 to be in an off state, so that the heating tray 3 drives the substrate w to rotate synchronously by a set angle;

[0215] Step S25, introducing process gas into the processing chamber 1 again, adjusting the RF source 5 to be turned on, and then depositing a certain number of thin films on the substrate w;

[0216] Step S26, stopping the introduction of process gas into the processing chamber 1, and introducing inert gas or nitrogen into the processing chamber 1 to maintain the pressure inside the processing chamber 1;

[0217] Step S27, determining whether the number of layers of the thin film deposited on the substrate w meets the set number of layers; if not, repeating the above steps S22-S26; if satisfied, executing step S28;

[0218] In step S28, the substrate w is taken out from the processing chamber 1 to complete the thin film deposition process.

[0219] The rotation axis AA' of the heating tray 3 and the substrate w is perpendicular and passes through the center O of the substrate w. In the present embodiment 18, the heating tray 3 rotates synchronously with the substrate w with the axis AA' passing through the center of the substrate w as the rotation axis, further comprising: the heating tray 3 rotates in a forward direction around the rotation axis AA' at a set angle, and then rotates in a reverse direction around the rotation axis AA'.

[0220] The thin film deposited on the substrate w includes the first material and the second material deposited alternately.

[0221] The thin film deposition method further includes: after each material is deposited on the surface of the substrate w, it is necessary to evacuate the waste gas in the processing chamber 1 before performing subsequent process steps.

[0222] After the film deposition is completed, (number of rotations of substrate w + 1) * the set angle of each rotation of substrate w = 360°. FIG. 8A to FIG. 8D As shown, after the thin film deposition is completed, the substrate w rotates 5 times, and the set angle for each rotation is 60 degrees; it can also be that the substrate w rotates 3 times, and the set angle for each rotation is 90 degrees; it can also be that the substrate w rotates 2 times, and the set angle for each rotation is 120 degrees; it can also be that the substrate w rotates 1 time, and the set angle for each rotation is 180 degrees.

[0223] Embodiment 19

[0224] See also Fig.10 and Fig.17 , this embodiment 19 provides a thin film deposition method, which is implemented based on the thin film deposition device in the above-mentioned embodiment 8 and embodiment 11.

[0225] Specifically, the thin film deposition method comprises the following steps:

[0226] Step S31, placing the substrate w in the processing chamber 1 of the PECVD, and evacuating the processing chamber 1 so that the substrate w on which the thin film is to be deposited is in a vacuum environment;

[0227] Step S32, introducing process gas into the processing chamber 1, and turning on the radio frequency source 5, so as to dissociate the process gas in the processing chamber 1 into plasma gas, and deposit a certain number of thin films on the substrate w;

[0228] Step S33, stop introducing the process gas into the processing chamber 1, and introduce an inert gas or nitrogen into the processing chamber 1 to maintain the pressure inside the processing chamber 1;

[0229] Step S34, adjusting the RF source 5 to the off state, lifting the substrate w, driving the heating tray 3 to rotate a set angle, and then placing the substrate w back on the heating tray 3;

[0230] Step S35, introducing process gas into the processing chamber 1, adjusting the RF source 5 to be turned on, and then depositing a certain number of thin films on the substrate w;

[0231] Step S36, stop introducing the process gas into the processing chamber 1, and introduce an inert gas or nitrogen into the processing chamber 1 to maintain the pressure inside the processing chamber 1;

[0232] Step S37, determining whether the number of layers of the thin film deposited on the substrate w meets the set number of layers; if not, repeating the above steps S32-S36; if satisfied, executing step S38;

[0233] Step S8, taking the substrate w out of the processing chamber 1 to complete the thin film deposition process.

[0234] The rotation axis AA' of the heating tray 3 is vertical and passes through the center O of the substrate w. In the present embodiment 19, the heating tray 3 rotates about the axis AA' passing through the center of the substrate w as the rotation axis, further comprising: the heating tray 3 rotates about the rotation axis AA' in a forward direction by a set angle, and then rotates about the rotation axis AA' in a reverse direction.

[0235] In this embodiment 19, the thin film deposited on the substrate w includes the first material and the second material deposited alternately.

[0236] The thin film deposition method further includes: after each material is deposited on the surface of the substrate w, it is necessary to evacuate the waste gas in the processing chamber 1 before performing subsequent process steps.

[0237] Embodiment 20

[0238] See also Fig.11 and Fig.18 , this embodiment 20 provides a thin film deposition method, which is implemented based on the thin film deposition device in the above-mentioned embodiment 9.

[0239] Specifically, the thin film deposition method comprises the following steps:

[0240] Step S41, placing multiple substrates w into the processing chamber 1 in sequence to complete the thin film deposition process;

[0241] Step S42, rotating the gas supply assembly 2 by a set angle;

[0242] In step S43, the processing chamber 1 is cleaned to ensure the cleanliness of the processing chamber 1. After the cleaning process is completed, steps S41-S43 are repeated.

[0243] In this embodiment 20, the thin film deposited on the substrate w includes a first material and a second material deposited alternately. The thin film deposition process of placing multiple substrates w in the processing chamber 1 in sequence includes: after each material is deposited on the surface of each substrate w, the waste gas in the processing chamber 1 needs to be evacuated before the subsequent process steps are performed.

[0244] Embodiment 21

[0245] See also FIG. 13A to FIG. 13C and Fig.19 , this embodiment 21 provides a thin film deposition method, which is implemented based on the thin film deposition device in the above-mentioned embodiment 12.

[0246] like FIG. 13A to FIG. 13C As shown, a first porous plate 21 is disposed at the bottom of the gas supply assembly 2; a gas regulating unit 200 is disposed inside the gas supply assembly 2, and a second porous plate 201 is disposed at the bottom of the gas regulating unit 200, and the second porous plate 201 is disposed opposite to the first porous plate 21 of the gas supply assembly 2. The gas flow direction of the process gas inside the gas supply assembly 2 can be adjusted by adjusting the gap between the second porous plate 201 and the first porous plate 21, so that the process gas inside the gas supply assembly 2 is fully mixed, thereby improving the defect of uneven deposition of thin films on the surface of the substrate w due to uneven distribution of plasma gas inside the processing chamber 1.

[0247] Specifically, FIG. 13A to FIG. 13C As shown, the gap between the second porous plate 201 and the first porous plate 21 is adjusted by stretching or compressing the side wall 202 of the gas regulating unit 200 in the vertical direction. For details, refer to the adjustment method of the side wall 202 of the gas regulating unit 200 described in the above embodiment 12, which will not be repeated here. The thin film deposition method provided in this embodiment 21 includes the following steps:

[0248] Step S51, placing multiple substrates w into the processing chamber 1 in sequence to complete the thin film deposition process;

[0249] Step S52, adjusting the gap between the second porous plate 201 and the first porous plate 21 to adjust the gas flow direction of the process gas inside the gas supply assembly 2;

[0250] In step S53, the processing chamber 1 is cleaned to ensure the cleanliness of the processing chamber 1. After the cleaning process is completed, steps S51-S53 are repeated.

[0251] Embodiment 22

[0252] See also FIG. 14A to FIG. 14C and Fig.19 , this embodiment 22 provides a thin film deposition method, which is implemented based on the thin film deposition device in the above embodiment 13. Compared with embodiment 21, the difference is:

[0253] like FIG. 14A to FIG. 14C As shown, a telescopic rod 203 is provided in the gas regulating unit 200. The gap between the second porous plate 201 and the first porous plate 21 is adjusted by stretching or compressing the telescopic rod 203 in the vertical direction. For details, refer to the adjustment method of the telescopic rod 203 of the gas regulating unit 200 described in the above embodiment 13, which will not be described in detail here.

[0254] The other settings of this embodiment are the same as those of Embodiment 21 and will not be repeated here.

[0255] Embodiment 23

[0256] See also FIG. 20A to FIG. 20E This embodiment 23 provides a thin film deposition device, including: a substrate loading port 002 for placing a substrate w; a cache device 003; a front-end robot 001 for transferring the substrate w between the substrate loading port 002 and the cache device 003; the thin film deposition device in the above embodiments 1-13, for performing thin film deposition on the substrate w; a process robot 004, for transferring the substrate w between the cache device 003 and the processing chamber 1 of the thin film deposition device.

[0257] Specifically, the front-end robot 001 takes out the substrate w to be deposited from the substrate loading port 002 and places it on the cache device 003; the process robot 004 takes out the substrate w from the cache device 003, places it in the processing chamber 1 of the thin film deposition device, and performs thin film deposition on the surface of the substrate w; after the thin film deposition is completed, the process robot 004 takes out the substrate w from the processing chamber 1 and places it on the cache device 003; the front-end robot 001 takes out the substrate w from the cache device 003 and puts it back to the substrate loading port 002, completing the process operation of the thin film deposition equipment.

[0258] In this embodiment 23, FIG. 20A to FIG. 20C As shown, the thin film deposition device has multiple processing chambers 1 , and the multiple processing chambers 1 are symmetrically arranged on both sides of the process robot 004 .

[0259] Meanwhile, the process robot 004 may be one or more. When the process robot 004 is multiple, such as Fig. 20A As shown, the corresponding cache device 003 is multiple. When the process robot 004 is one, as shown in FIG. Fig. 20B and Fig. 20C As shown, a contactless magnetic suspension track is provided under the process robot 004 to ensure that the process robot 004 is oil-free and friction-free during the sliding process. A plurality of heating trays 3 may also be provided inside each processing chamber 1 for simultaneously performing thin film deposition on multiple substrates w to improve the process efficiency of thin film deposition.

[0260] In this embodiment 23, Fig. 20A , Fig. 20C As shown, the plurality of heating trays 3 inside each processing chamber 1 may be arranged in a matrix structure. Alternatively, in other embodiments, as Fig. 20B , Fig.20D and Fig.20E As shown, a plurality of heating trays 3 inside each processing chamber 1 are arranged in a triangular structure.

[0261] Optionally, multiple substrates w can be placed inside the cache device 003 , and the centers of the multiple substrates w are on the same circle. The multiple substrates w can rotate along a rotation axis perpendicular to the center of the circle to change the positions of the multiple substrates w inside the cache device 003 .

[0262] like Fig.20D and Fig.20E As shown, three substrates w can be placed inside the cache device 003, and the three substrates w inside the cache device 003 are arranged in a triangular structure, and the three substrates w can rotate. The structure of the process robot 004 is matched with the triangular structure formed by the three substrates w inside the cache device 003 and the triangular structure formed by the three heating trays 3 in the processing chamber 1. The process robot 004 includes three substrate transfer arms for taking and placing substrates, and the positions and numbers of the three substrate transfer arms are set corresponding to the multiple heating trays 3. The process robot 004 takes three substrates w from the cache device 003 at the same time and puts them on the three heating trays 3 in the processing chamber 1 to improve the process efficiency of thin film deposition.

[0263] Furthermore, if Fig.20E As shown, there is one process robot 004. The process robot 004 is a retractable arm. At the same time, the process robot 004 can rotate and swing left and right to pick up and place substrates w in different positions of the processing chamber 1.

[0264] Embodiment 24

[0265] This embodiment 24 provides a thin film deposition device, which is different from the embodiment 23 in that:

[0266] like FIG. 20F to FIG. 20I as well as Figure 20K As shown, a plurality of processing chambers 1 are sequentially arranged on the periphery of the process robot 004 .

[0267] Among them, Figure 20G As shown, there are five processing chambers 1, which are sequentially arranged around the periphery of the process robot 004. Three heating trays 3 are arranged inside each processing chamber 1 for simultaneously performing thin film deposition on three substrates w, and the three heating trays 3 are arranged in a triangle structure.

[0268] In a preferred embodiment, the cache device 003 is provided with two layers of storage platforms, each layer of storage platforms can be used to place three substrates w, one layer of storage platforms is used to place substrates w to be deposited, and the deposited substrates w are transferred out through another layer of storage platforms. The double-layer structure can reduce the waiting time of substrates w, which is conducive to increasing the throughput of the machine equipment. The two layers of storage platforms can be unconnected, and two rotating units are used to drive the respective storage platforms to rotate. The two layers of storage platforms can also be connected, and the two layers of storage platforms are placed on the same rotating unit, and a rotating shaft is used to drive the two layers of storage platforms to rotate synchronously.

[0269] Based on the overall operating speed of the device, the thin film deposition device may optionally be provided with a plurality of cache devices 003. The plurality of cache devices 003 may be interconnected or not.

[0270] Preferably, if Fig. 20J As shown, the thin film deposition equipment is provided with two cache devices 003, namely, a cache device 0031 and a cache device 0032. Each cache device 003 is provided with three layers of storage platforms 0033 in the vertical direction. Each layer of storage platforms 0033 can be used to place three substrates w. The cache device 0031 is driven by the rotating unit 7, and the cache device 0032 is driven by the rotating unit 8. The three layers of storage platforms 0033 in each cache device 0031, 0032 are driven to rotate synchronously by a rotating unit. The two cache devices 0031, 0032 are arranged along the vertical direction, and the vertical spacing between the two cache devices 0031, 0032 is within the preset range value that the process robot 004 can take and place the substrate w. Optionally, one layer of the three-layer storage platform 0033 can be vacant, and the other two layers of storage platforms are used to take and place the substrate w. According to the process requirements, the number of process robots 004 is not limited to one.

[0271] Further, one side of one of the cache devices 0031 is opened, and the front-end robot 001 takes out the substrate w to be deposited from the substrate loading port 002 and places it on the cache device 0031; one side of the other cache device 0032 is opened, and the process robot 004 takes out the deposited substrate w from the processing chamber 1 and places it on the cache device 0032. On the contrary, the other side of the cache device 0032 is opened to place the substrate w to be deposited, and the other side of the cache device 0031 is opened to place the deposited substrate w. That is, the opening modes of the cache devices 0031 and 0032 are staggered to improve production efficiency. The other settings of this embodiment are the same as those of embodiment 23, and will not be repeated here.

[0272] Embodiment 25

[0273] See also Fig.21 , this embodiment 25 provides a thin film deposition device, which includes: a processing chamber 1, used for thin film deposition; a gas supply component 2, arranged on the top wall of the processing chamber 1, used to supply process gas to the inside of the processing chamber 1; a heating tray 3, arranged below the gas supply component 2, used to carry and heat the substrate w; a radio frequency source 5, used to provide radio frequency power to excite the process gas inside the processing chamber 1 to dissociate into plasma gas, and the plasma gas is used to deposit a thin film on the substrate w; a lifting mechanism 402 is connected to the gas supply component 2, and is used to drive the gas supply component 2 to move up and down.

[0274] The lifting mechanism 402 may be a cylinder 402. The cylinder 402 drives the gas supply assembly 2 to rise or fall to adjust the distance between the gas supply assembly 2 and the substrate w. The distance between the gas supply assembly 2 and the substrate w is adjusted within a preset range, further improving the uniformity of thin film deposition of the PECVD layer stack structure.

[0275] The twenty-fifth embodiment can be combined with any one of the above-mentioned embodiments one to thirteen to adjust the distance between the gas supply assembly 2 and the substrate w.

[0276] Embodiment 26

[0277] See also Figure 22-23, this embodiment 26 provides a thin film deposition device, which includes: a processing chamber 1, used for thin film deposition; a gas supply component 2, arranged on the top wall of the processing chamber 1, used to supply process gas to the inside of the processing chamber 1; a heating tray 3, arranged below the gas supply component 2, used to carry and heat the substrate w; a radio frequency source 5, used to provide radio frequency power, to form a radio frequency electric field inside the processing chamber 1, to excite the process gas inside the processing chamber 1 to dissociate into plasma gas, and the dissociated plasma gas is used to deposit a thin film on the substrate w; a rotating mechanism 403 is connected to the heating tray 3, and is used to drive the heating tray 3 to rotate with the axis AA' passing through the center of the substrate w as the rotation axis.

[0278] The heating tray 3 can also be lifted and lowered. The lifting mechanism 402 is connected to the heating tray 3 and is used to drive the heating tray 3 to move up and down. The support member is used to support the substrate w. The support member can be a support ring 404 and / or an ejector pin 401.

[0279] like Fig.23 As shown, when the heating tray 3 needs to be rotated, the lifting mechanism 402 drives the heating tray 3 to move downward in the vertical direction, so that the heating tray 3 is separated from the substrate w, and the support member supports the substrate w. Then the rotating mechanism 403 drives the lifting mechanism 420 and the heating tray 3 to rotate a set angle; after the heating tray 3 rotates the set angle, it stops rotating, and the lifting mechanism 402 drives the heating tray 3 to rise upward in the vertical direction, and the substrate w is placed on the heating tray 3 for thin film deposition.

[0280] In addition, when the distance between the gas supply assembly 2 and the substrate w needs to be adjusted, the heating tray 3 rises or falls with the substrate w, thereby making the distance value within a preset range, further improving the uniformity of thin film deposition of the PECVD layer stack structure.

[0281] Embodiment 27

[0282] See also Figure 24-25 , this embodiment 27 provides a thin film deposition device, which is different from the embodiment 26 in that:

[0283] The thin film deposition device further includes: a support member and a second lifting mechanism 405. The support member is used to support the substrate w, wherein the support member can be a support ring 404 arranged at the bottom of the edge of the substrate w, and the support ring 404 adopts Figure 5 The circular ring with the notch a is shown.

[0284] The first lifting mechanism 402 is connected to the rotating mechanism 403, and is used to drive the rotating mechanism 403 and the heating tray 3 to move up and down. The rotating mechanism 403 is arranged at the bottom end of the heating tray 3, and is used to drive the heating tray 3 to rotate about the axis AA' passing through the center of the substrate w, thereby driving the substrate w to rotate synchronously.

[0285] The second lifting mechanism 405 is connected to the support ring 404, and is used to drive the support ring 404 to rise or fall in the vertical direction, so as to lift the substrate w off the heating tray 3 or place the substrate w on the heating tray 3. In addition, the second lifting mechanism 405 is also connected to the first lifting mechanism 402, and the second lifting mechanism 405 drives the first lifting mechanism 402 and the support ring 404 to move up and down together, thereby driving the substrate w to move up and down to adjust the distance between the gas supply assembly 2 and the substrate w.

[0286] In this embodiment, if Fig.25 As shown, when the heating tray 3 needs to be rotated, the second lifting mechanism 405 drives the support ring 404 to rise upward in the vertical direction, lifts the substrate w, and separates the substrate w from the heating tray 3, and then the rotating mechanism 403 drives the first lifting mechanism 402 and the heating tray 3 to rotate a set angle. After the heating tray 3 rotates the set angle, it stops rotating, and the second lifting mechanism 405 drives the support ring 404 to move downward in the vertical direction, placing the substrate w on the heating tray 3 for thin film deposition. Optionally, the first lifting mechanism 402 drives the heating tray 3 to descend so that the substrate w separates from the heating tray 3.

[0287] The support member may also be a pin moving in the vertical direction, a first through hole is formed on the heating tray 3, and the pin is arranged in the first through hole. The second lifting mechanism 405 drives the pin to rise or fall in the vertical direction.

[0288] Embodiment 28

[0289] See also Figure 26-27 , this embodiment 28 provides a thin film deposition device, which includes: a processing chamber 1, used for thin film deposition; a gas supply component 2, arranged on the top wall of the processing chamber 1, used to supply process gas to the inside of the processing chamber 1; a heating tray 3, arranged below the gas supply component 2, used to carry and heat the substrate w; a radio frequency source 5, used to provide radio frequency power, to form a radio frequency electric field inside the processing chamber 1, to excite the process gas inside the processing chamber 1 to dissociate into plasma gas, and the dissociated plasma gas is used to perform thin film deposition on the substrate w; a lifting mechanism 402 is connected to the heating tray 3, and is used to drive the heating tray 3 to move up and down.

[0290] The controller is connected to the gas supply assembly 2, the RF source 5, the heating tray 3, the rotating mechanism 403, and the lifting mechanism 402, respectively, and is used to control the operation of the gas supply assembly 2, the RF source 5, the heating tray 3, the rotating mechanism 403, and the lifting mechanism 402. The controller is also configured to construct a program menu, which includes keeping the RF source 5 turned on when the substrate w rotates.

[0291] The thin film deposition device further includes: a support member, used to support the substrate w; and a rotating mechanism 403, connected to the support member, used to drive the support member and the substrate w to rotate.

[0292] Among them, Fig. 27 As shown, the support member is a support ring 404, which is arranged at the bottom edge of the substrate w; the rotating mechanism 403 is connected to the support ring 404, and is used to drive the support ring 404 to rotate with the center line AA' of the substrate w as the rotation axis.

[0293] When the substrate w needs to be rotated, the lifting mechanism 402 drives the heating tray 3 to descend in the vertical direction, separates the heating tray 3 from the support ring 404, and the support ring 404 supports the substrate w. The rotating mechanism 403 drives the support ring 404 to rotate. The support ring 404 lifts the substrate w to adjust the set rotation angle of the substrate w to realize the rotation of the substrate w around the rotation axis AA', compensates for the uneven thickness of the thin film deposited on the substrate w, and realizes the uniformity and stability of the thin film deposition of the PECVD layer stack structure.

[0294] Embodiment 29

[0295] See also Figure 28-29 , this embodiment 29 provides a thin film deposition device, which is different from the embodiment 28 in that:

[0296] The supporting member is a pin 401, a first through hole 301 is formed on the heating tray 3, and the pin 401 is disposed in the first through hole 301. Figure 3A and Figure 3B As shown, the cross section of the first through hole 301 in the horizontal plane is an arc or a circle, and the center M of the arc or the circle is on a vertical line with the center O of the substrate w. When the substrate w needs to be rotated, the lifting mechanism 402 drives the heating tray 3 to descend in the vertical direction to separate the heating tray 3 from the substrate w, and the ejector pin 401 lifts the substrate w. The ejector pin 401 supports the substrate w, and the rotating mechanism 403 drives the ejector pin 401 to move along the arc track in the first through hole 301 to rotate the substrate w by a set angle. After the substrate w rotates by the set angle, the substrate w stops rotating, and the lifting mechanism 402 drives the heating tray 3 to rise in the vertical direction, and the substrate w is placed on the heating tray 3 for subsequent thin film deposition.

[0297] Embodiment 30

[0298] See also Figure 30-31 , this embodiment 30 provides a thin film deposition device, which is different from the embodiment 28 in that:

[0299] The support member includes a pin 401 and a support ring 404. The thin film deposition device includes a first lifting mechanism 402 and a second lifting mechanism 405. The first lifting mechanism 402 is connected to the heating tray 3 and is used to drive the heating tray 3 to move up and down; the second lifting mechanism 405 is connected to the pin 401 and is used to drive the pin 401 to rise or fall in the vertical direction, so that the robot can take the substrate w from the heating tray 3 or place the substrate w on the heating tray 3.

[0300] Embodiment 31

[0301] See also Figure 32-33 , this embodiment 31 provides a thin film deposition device, which is different from the embodiment 30 in that:

[0302] The thin film deposition apparatus further includes a third lifting mechanism 406 , which is connected to the support ring 404 .

[0303] In this embodiment, the second lifting mechanism 405 drives the ejector pin 401 to rise or fall in the vertical direction, so that the manipulator can take the substrate w from the heating tray 3 or place the substrate w on the heating tray 3. The first lifting mechanism 402 drives the heating tray 3 to move up and down, and the third lifting mechanism 406 drives the support ring 404 and the substrate w to move up and down. The heating tray 3 and the substrate w move synchronously under the drive of the first lifting mechanism 402 and the third lifting mechanism 406 respectively to adjust the distance between the gas supply assembly 2 and the substrate w, so that the distance value is within a preset range value, further improving the uniformity of the thin film deposition of the PECVD layer stack structure. Optionally, the third lifting mechanism 406 is connected to the first lifting mechanism 402 and the support ring 404 respectively, and the third lifting mechanism 406 drives the first lifting mechanism 402 and the support ring 404 to move up and down in the vertical direction at the same time.

[0304] When the substrate w needs to be rotated, the third lifting mechanism 406 drives the support ring 404 to rise in the vertical direction, the support ring 404 is separated from the heating tray 3, the support ring 404 supports the substrate w, and the rotating mechanism 403 drives the support ring 404 to rotate, and the support ring 404 lifts the substrate w to adjust the rotation setting angle of the substrate w.

[0305] Embodiment 32

[0306] See also Figure 35-36 This embodiment 32 provides a thin film deposition device. Compared with the embodiment 28, the difference is that the thin film deposition device also includes a pin 401 and a second lifting mechanism 405, and the lifting mechanism 402 is a first lifting mechanism 402.

[0307] The first lifting mechanism 402 drives the heating tray 3 to move, and the second lifting mechanism 405 is connected to the support ring 404, and is used to drive the support ring 404 to rise or fall in the vertical direction. The heating tray 3 is provided with a first through hole 301, and the ejector pin 401 is arranged in the first through hole 301. The lower end of the ejector pin 401 abuts against the base 6, and the base 6 is connected to the bottom of the processing chamber 1. According to the height of the substrate w transferred to the processing chamber 1, the height of the base 6 is pre-set. When the ejector pin 401 abuts against the base 6, the upper end of the ejector pin 401 is higher than the support ring 404 and the heating tray 3, and the upper end of the ejector pin 401 is used to receive the substrate w.

[0308] The heating tray 3 and the substrate w are driven by the first lifting mechanism 402 and the second lifting mechanism 405 to move synchronously to adjust the distance between the gas supply assembly 2 and the substrate w. In one embodiment, the heating tray 3 is provided with a groove corresponding to the position of the ejector pin 401, and the top of the ejector pin 401 is provided with a convex portion. When the heating tray 3 moves upward, the convex portion of the ejector pin 401 is accommodated in the groove, and the heating tray 3 continues to move upward and moves upward with the ejector pin 401. After the ejector pin 401 moves upward, the ejector pin 401 is separated from the base 6, and the ejector pin 401 is in a suspended state.

[0309] When the substrate w needs to be rotated, the second lifting mechanism 405 drives the support ring 404 to rise in the vertical direction, the support ring 404 is separated from the heating tray 3, the support ring 404 supports the substrate w, and the rotating mechanism 403 drives the support ring 404 to rotate to adjust the rotation setting angle of the substrate w.

[0310] Embodiment 33

[0311] See also Fig.37 , this embodiment 33 provides a thin film deposition device, which includes: a processing chamber 1, used for thin film deposition; a gas supply assembly 2, arranged on the top wall of the processing chamber 1, used to supply process gas to the inside of the processing chamber 1; a heating tray 3, arranged below the gas supply assembly 2, used to carry and heat the substrate w; a radio frequency source 5, used to provide radio frequency power to excite the process gas inside the processing chamber 1 to dissociate into plasma gas, and the plasma gas is used to deposit a thin film on the substrate w; a ejector pin 401, arranged in the heating tray 3, one end of the ejector pin 401 is arranged at the bottom of the processing chamber 1, and the other end of the ejector pin 401 is used to receive the substrate w.

[0312] In this embodiment, three heating trays 3 are arranged inside each processing chamber 1 for simultaneously performing thin film deposition on three substrates w. The thin film deposition device includes three groups of ejector pins. Each group of ejector pins includes three ejector pins 401, and each three ejector pins 401 have the same height and are used to receive one substrate w. Each group of ejector pins has a different height.

[0313] Preferably, the heights of the three groups of ejector pins are in a step-like shape, and the received substrates w are also configured in a step-like shape accordingly. The three heating trays 3 are arranged in a triangular structure. The structure of the process robot 004 matches the triangular structure formed by the three heating trays 3 in the processing chamber 1. The process robot 004 places the three substrates w in order from high to low according to the heights of the three groups of ejector pins. Specifically, Fig.37 First, the substrate w1 is aligned with the heating tray 3 corresponding to the ejector pin 4011, and after the alignment is completed, the substrate w1 is placed on the heating tray 3, and then the substrate w2 is aligned with the heating tray 3 corresponding to the ejector pin 4012 and then the substrate w2 is placed. Similarly, the substrate w3 is aligned with the heating tray 3 corresponding to the ejector pin 4013 and then placed on the heating tray 3. The above arrangement improves the alignment accuracy of the three substrates w and their respective heating trays 3. In addition, the ejector pin 401 can be aligned without lifting, which simplifies the structure of the thin film deposition device.

[0314] Embodiment 34

[0315] See also Fig.38 , Fig.39 As shown, this embodiment 34 provides a thin film deposition device. Compared with embodiment 1, the difference is:

[0316] like Fig.38 As shown, the thin film deposition device also includes a supporting mechanism for supporting the substrate w, and the supporting mechanism includes a pin 501 and a supporting ring 504. A through hole 301 is opened on the heating tray 3, and the pin 501 is located in the through hole 301. The first lifting mechanism 502 is connected to the pin 501, and drives the pin 501 to rise or fall in the vertical direction, so that the robot can take the substrate w from the heating tray 3 or place the substrate w on the heating tray 3. The supporting ring 504 is arranged below the edge of the substrate w for supporting the substrate w, and the supporting mechanism also includes a supporting shaft 505 arranged below the supporting ring 504, and the supporting shaft 505 is non-fixedly connected to the supporting ring 504. The lifting mechanism includes a first lifting mechanism 502 and a second lifting mechanism. In a specific embodiment, the second lifting mechanism is connected to the supporting shaft 505, and is used to drive the supporting shaft 504 to rise to contact the supporting ring 504, and then lift the substrate w to separate the substrate w from the heating tray 3 or lower the substrate w to place the substrate w on the heating tray 3. In another specific embodiment, the support shaft 505 is fixed, and the first lifting mechanism 502 drives the heating tray 3 to rise and fall to achieve the support and separation of the support shaft 505 and the support ring 504.

[0317] In this embodiment 34, the rotating mechanism 503 is disposed at the bottom of the first lifting mechanism 502, and is used to drive the first lifting mechanism 502 to rotate about the center line AA' of the substrate w, so as to drive the heating tray 3 to rotate. The rotating mechanism 503 can also directly drive the heating tray 3 to rotate.

[0318] like Fig.39 Shown Fig.38 A partial enlarged view of the middle A area, the heating tray 3 is configured with a substrate support portion 148 and an edge portion 147 with a middle protrusion, the diameter of the substrate support portion 148 is smaller than the diameter of the substrate w, the height difference between the substrate support portion 148 and the edge portion 147 is 0.3-0.7mm, and the thickness of the support ring 504 is the same as the height difference between the substrate support portion 148 and the edge portion 147. During the thin film deposition process, the support ring 504 is separated from the support shaft 505, and the support ring 504 is supported by the edge portion 147 of the heating tray 3. At this time, the upper surface of the support ring 504 is in contact with the substrate w, and the lower surface is in contact with the heating tray 3, which can better conduct heat to the substrate w and prevent the edge temperature of the substrate w from being insufficient. The inner diameter of the support ring 504 is smaller than the diameter of the substrate support portion 148. When the support ring 504 is placed on the edge portion 147, a gap is left between the support ring 504 and the substrate support portion 148 to prevent the friction between the support ring 504 and the heating tray 3 from causing excessive particles on the substrate w. The upper surface of the support ring 504 is provided with a first step 5041 and a second step 5042, the second step 5042 is higher than the first step 5041, the first step 5041 is flush with the surface of the substrate support portion 148, and the substrate w can be placed on the first step 5041 of the support ring 504 to prevent shaking. The first step 5041 and the second step 5042 are connected by a slope, and when the substrate w is placed on the heating tray 3, the slope of the support ring 504 can play a guiding role.

[0319] refer to Figures 40A-40D The present invention also discloses a process of performing a thin film deposition process using the thin film deposition device provided in this embodiment. The specific process includes:

[0320] S1: the robot puts the substrate w into the processing chamber, and the first lifting mechanism 502 drives the ejector pin 501 to rise upward in the vertical direction and extend from the through hole 301 to carry the substrate w put in by the robot; then the first lifting mechanism 502 drives the ejector pin 501 to descend downward in the vertical direction, and the ejector pin 501 retracts into the through hole 301, so that the substrate w is placed on the heating tray 3;

[0321] S2: depositing a thin film of a first thickness on the substrate w, Fig.38 The figure shows the state of the device performing the first thin film deposition on the substrate w.

[0322] S3: The rotating mechanism 503 drives the first lifting mechanism 502 to rotate, and at the same time drives the heating tray 3 and the substrate w to rotate from the first position (initial position) to the second position by a first angle, such as Fig.40A The position of ejector pin 501 is shown relative to Fig.38 In this step, the support ring 504 is driven by the heating tray 3 to rotate together.

[0323] S4: The first lifting mechanism 502 drives the heating tray 3 to descend, driving the substrate w and the support ring 504 to descend together until the support ring 504 contacts the support shaft 505, and the support ring 504 stops descending together with the substrate w after being supported by the support shaft 505. At this time, the first lifting mechanism 502 continues to descend until the heating tray 3 is separated from the substrate w. In this step, the first lifting mechanism 502 may not work, and the second lifting mechanism may drive the support shaft 505 to rise until it contacts the support ring 504 and then continue to rise to separate the substrate w from the heating tray 3. In this step, the first lifting mechanism 502 and the second lifting mechanism may work together, the first lifting mechanism 502 drives the heating tray 3 to descend, and the second lifting mechanism drives the support shaft 505 to rise and drives the support ring 504 and the substrate w to rise to separate the support ring 504 from the heating tray 3.

[0324] S5: The rotating mechanism 503 drives the first lifting mechanism 502 to rotate again, and at the same time drives the heating tray 3 to rotate the second angle to the third position. After this step is completed, the relative position of the substrate w and the heating tray 3 is changed. Preferably, in this step, the heating tray 3 rotates to the initial position, which can be directly rotated back to the initial position, or can continue to rotate to the initial position. Fig.40C The position of ejector pin 501 is now back to Fig.38 At this time, the relative position of the substrate w and the heating tray 3 changes. In this step, the support ring 504 does not rotate, and the rotating mechanism 503 can also directly drive the heating tray 3 to rotate.

[0325] S6: The first lifting mechanism 502 drives the heating tray 3 to rise, driving the substrate w and the support ring 504 to rise together until the heating tray 3 contacts the substrate w. In this step, the first lifting mechanism 502 may not work, and the second lifting mechanism may drive the support shaft 505 to descend until the substrate w contacts the heating tray 3. In this step, the first lifting mechanism 502 and the second lifting mechanism may work together, the first lifting mechanism 502 drives the heating tray 3 to rise, and the second lifting mechanism drives the support shaft 505 to drive the support ring 504 and the substrate w to descend to achieve the contact between the support ring 504 and the heating tray 3.

[0326] S7: depositing a thin film of a second thickness on the substrate w.

[0327] S8: Repeat S3-S7 until n times of thin film deposition are completed.

[0328] S9: When the robot takes away the substrate w from the inside of the processing chamber, the first lifting mechanism 502 drives the ejector pin 501 to rise upward in the vertical direction and extend out from the through hole of the heating tray 3, thereby lifting the substrate w from the heating tray 3 to facilitate the robot to take away the substrate w. Then the first lifting mechanism 502 drives the ejector pin 501 to descend downward in the vertical direction, and the ejector pin 501 retracts into the through hole.

[0329] When the rotating mechanism 503 drives the heating tray 3 to rotate, the process gas is stopped from being introduced into the processing chamber, and an inert gas or nitrogen is introduced into the processing chamber to maintain the pressure in the processing chamber, and the RF source is kept turned on. Because after a certain number of thin films are deposited on the substrate w, some impurity particles are suspended inside the processing chamber. At this time, the RF source is kept turned on, and the inside of the processing chamber is filled with an RF electric field. The impurity particles are charged under the action of the RF electric field inside the processing chamber. The charged impurity particles remain suspended and will not fall on the surface of the substrate w, effectively preventing the impurity particles from falling on the thin film deposited on the substrate w, and avoiding contamination of the thin film deposited on the substrate w.

[0330] The other configurations of this embodiment are the same as those of the first embodiment and will not be described in detail here.

[0331] Embodiment 35

[0332] See also Fig.41 , Fig.42 As shown, this embodiment 35 provides a thin film deposition device. Compared with embodiment 34, the difference is:

[0333] like Fig.41 As shown, the support shaft 505 of the thin film deposition device is fixedly connected to the support ring 504. In one specific embodiment, the second lifting mechanism is connected to the support shaft 505 and is driven to rise and fall by the support shaft 505. In another specific embodiment, the support shaft 505 is fixed.

[0334] like Fig.42 Shown Fig.41A partial enlarged view of the middle B area shows that the heating tray 3 is configured with a substrate support portion 148 and an edge portion 147 with a central protrusion. The diameter of the substrate support portion 148 is smaller than the diameter of the substrate w. The height difference between the substrate support portion 148 and the edge portion 147 is 1.5-2.9 mm, and the thickness of the support ring 504 is 0.3-0.7 mm. When the substrate w is placed on the heating tray 3, the support ring 504 can move up and down in the space between the substrate w and the edge portion 147. In the thin film deposition process state, the second lifting mechanism drives the support shaft 505 to rise, and drives the support ring 504 to the same height as the substrate support portion 148, or the support shaft 505 does not move, and the first lifting mechanism 502 drives the heating tray 3 to descend to the same height as the support ring 504. At this time, the support ring 504 is not in contact with the heating tray 3, and the support ring 504 and the heating tray 3 support the substrate w.

[0335] refer to Figure 43A-43D The present invention also discloses a process of performing a thin film deposition process using the thin film deposition device provided in this embodiment. The specific process includes:

[0336] S1: the robot puts the substrate w into the processing chamber, and the first lifting mechanism 502 drives the ejector pin 501 to rise upward in the vertical direction and extend from the through hole 301 to carry the substrate w put in by the robot; then the first lifting mechanism 502 drives the ejector pin 501 to descend downward in the vertical direction, and the ejector pin 501 retracts into the through hole 301, so that the substrate w is placed on the heating tray 3;

[0337] S2: depositing a thin film of a first thickness on the substrate w, Fig.41 The figure shows the state of the device performing the first thin film deposition on the substrate w.

[0338] S3: The first lifting mechanism 502 drives the heating tray 3 to rise until the support ring 504 is not in contact with the substrate w and the heating tray 3, or the second lifting mechanism drives the support shaft 505 to descend, and drives the support ring 504 to descend until it is not in contact with the substrate w and the heating tray 3, or the first lifting mechanism 502 and the second lifting mechanism work together, the first lifting mechanism 502 drives the heating tray 3 to rise, and the second lifting mechanism drives the support shaft 505 and drives the support ring 504 to descend until the support ring 504 is not in contact with the substrate w and the heating tray 3. The rotating mechanism 503 drives the first lifting mechanism 502 to rotate, and at the same time drives the heating tray 3 and the substrate w to rotate from the first position (initial position) to the second position by a set angle, such as Fig.43A The position of ejector pin 501 is shown relative to Fig.41 In this step, the support ring 504 does not rotate, and the rotating mechanism 503 can also directly drive the heating tray 3 to rotate.

[0339] S4: The first lifting mechanism 502 drives the heating tray 3 to descend, and drives the substrate w to descend together until the substrate w contacts the support ring 504. The substrate w stops descending after being supported by the support ring 504. At this time, the first lifting mechanism 502 continues to descend until the heating tray 3 is separated from the substrate w. In this step, the first lifting mechanism 502 may not work, and the second lifting mechanism may drive the support shaft 505 to rise, and drive the support ring 504 to rise until the support ring 504 contacts the substrate w, and then continue to rise to separate the substrate w from the heating tray 3. In this step, the first lifting mechanism 502 and the second lifting mechanism may work together, the first lifting mechanism 502 drives the heating tray 3 to descend, and the second lifting mechanism drives the support shaft 505 and the support ring 504 to rise to separate the support ring 504 from the heating tray 3.

[0340] S5: The rotating mechanism 503 drives the first lifting mechanism 502 to rotate again, and at the same time drives the heating tray 3 to rotate the second angle to the third position. After this step is completed, the relative position of the substrate w and the heating tray 3 is changed. Preferably, in this step, the heating tray 3 rotates to the initial position, which can be directly rotated back to the initial position, or can continue to rotate to the initial position. Fig.43C The position of ejector pin 501 is now back to Fig.41 At this time, the relative position between the substrate w and the heating tray 3 changes. In this step, the rotating mechanism 503 can also directly drive the heating tray 3 to rotate.

[0341] S6: The first lifting mechanism 502 drives the heating tray 3 to rise until the heating tray 3 contacts the substrate w. In this step, the first lifting mechanism 502 may not work, and the second lifting mechanism may drive the support shaft 505 to descend until the substrate w contacts the heating tray 3. In this step, the first lifting mechanism 502 and the second lifting mechanism may work together, the first lifting mechanism 502 drives the heating tray 3 to rise, and the second lifting mechanism drives the support shaft 505 and drives the support ring 504 and the substrate w to descend until the substrate w contacts the heating tray 3.

[0342] S7: depositing a thin film of a second thickness on the substrate w.

[0343] S8: Repeat S3-S7 until n times of thin film deposition are completed.

[0344] S9: When the robot takes away the substrate w from the inside of the processing chamber, the first lifting mechanism 502 drives the ejector pin 501 to rise upward in the vertical direction and extend out from the through hole of the heating tray 3, thereby lifting the substrate w from the heating tray 3 to facilitate the robot to take away the substrate w. Then the first lifting mechanism 502 drives the ejector pin 501 to descend downward in the vertical direction, and the ejector pin 501 retracts into the through hole.

[0345] It should be noted that the above-mentioned multiple embodiments can be combined with each other to form a new solution under the condition that the technical solution logic is accurate, that is, certain features, structures or characteristics in one or more embodiments of the present application can be appropriately combined. The new solution will not be described in detail here.

[0346] The present invention has specifically and fully disclosed the relevant technology through the above-mentioned implementation mode and related drawings, so that those skilled in the art can implement it accordingly. The above-mentioned embodiments are only used to illustrate the present invention, not to limit the present invention. The scope of rights of the present invention should be defined by the claims of the present invention. As for the change of the number of elements described in this article or the replacement of equivalent elements, etc., they should still fall within the scope of rights of the present invention.

[0347] At the same time, the present invention uses specific words to describe the embodiments of the present invention. For example, "one embodiment", "an embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of the present invention. Therefore, it should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more in different places in this specification does not necessarily refer to the same embodiment.

[0348] Similarly, it should be noted that in order to simplify the description of the present invention and thus facilitate the understanding of one or more embodiments of the invention, in the above description of the embodiments of the invention, multiple features are sometimes combined into one embodiment, figure or description thereof. However, this disclosure method does not mean that the subject matter of the invention requires more features than those mentioned in the claims. In fact, the features of the embodiments are less than all the features of the single embodiment disclosed above.

Claims

1. A thin film deposition device, characterized in that: include: a processing chamber for performing thin film deposition; A heating tray, used for carrying and heating the substrate, wherein the heating tray is configured as a substrate supporting portion with a middle protrusion and an edge portion for placing a supporting ring; A supporting mechanism, comprising a supporting ring disposed around the substrate supporting portion and a supporting shaft for supporting the supporting ring; A lifting mechanism, used for driving the support shaft to lift and / or driving the heating tray to lift and / or A rotating mechanism, used for driving the heating tray to rotate; The thin film deposition device is configured as follows: after a thin film deposition is completed, the rotating mechanism drives the heating tray to rotate the substrate from a first position to a second position; after the rotation is completed, the heating tray is separated from the substrate, and the substrate is supported by the support ring; the rotating mechanism drives the heating tray to rotate to a third position, while the support ring and the substrate remain in the second position; the next thin film deposition is performed after the heating tray contacts the substrate.

2. The thin film deposition device according to claim 1, characterized in that: The third position is the same as the first position.

3. The thin film deposition device according to claim 1, characterized in that: The inner diameter of the support ring is greater than the outer diameter of the substrate supporting portion.

4. The thin film deposition device according to claim 1, characterized in that: The support shaft is non-fixedly connected to the support ring.

5. The thin film deposition device according to claim 4, characterized in that: A surface height difference between the substrate supporting portion and the edge portion is the same as a thickness of the supporting ring.

6. The thin film deposition device according to claim 5, characterized in that: The support ring has a thickness of 0.3-0.7 mm.

7. The thin film deposition device according to claim 1, characterized in that: The support ring is fixedly connected to the support shaft.

8. The thin film deposition device according to claim 7, characterized in that: The surface height difference between the substrate supporting portion and the edge portion is 1.5-2.9 mm.

9. The thin film deposition device according to claim 8, characterized in that: The support ring has a thickness of 0.3-0.7 mm.

10. The thin film deposition device according to claim 7, characterized in that: When the rotating mechanism drives the heating tray to rotate together with the substrate, the supporting ring is kept in a non-contact state with the heating tray and the substrate.

11. A thin film deposition method, characterized in that: include: Placing a substrate in a processing chamber and depositing a thin film of a first thickness on the substrate; The heating tray drives the substrate to rotate from the first position to the second position; The heating tray is separated from the substrate, the support ring supports the substrate, and the heating tray rotates from the second position to the third position; The heated tray is brought into contact with the substrate to deposit a thin film of a second thickness.

12. The thin film deposition method according to claim 11, characterized in that: The first position is the same as the third position.

13. The thin film deposition method according to claim 11, characterized in that: The heating tray is separated from the substrate by the lifting mechanism driving the heating tray to descend.

14. The thin film deposition method according to claim 11, characterized in that: The separation of the heating tray from the substrate is achieved by the lifting mechanism driving the heating tray downward and driving the supporting shaft upward.

15. The thin film deposition method according to claim 11, characterized in that: The separation of the heating tray and the substrate is achieved by the lifting mechanism driving the supporting shaft to rise.

16. The thin film deposition method according to claim 11, characterized in that: The support shaft and the support ring are not fixedly connected, and the support and separation between the two are achieved through relative movement.

17. The thin film deposition method according to claim 16, characterized in that: When a thin film is deposited on a substrate, the upper surface of the support ring is in contact with the substrate, and the lower surface of the support ring is in contact with the heating tray.

18. The thin film deposition method according to claim 16, characterized in that: When the heating tray drives the substrate to rotate, the support ring and the support shaft are in a separated state, and the support ring is driven by the heating tray to rotate together.

19. The thin film deposition method according to claim 11, characterized in that: The support ring is fixedly connected to the support shaft, and the support ring is driven to rise and fall by the support shaft.

20. The thin film deposition method according to claim 19, characterized in that: After the support shaft drives the support ring to descend until it is not in contact with the substrate and the heating tray, the heating tray drives the substrate to rotate, and the support ring does not rotate.

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